CN114294552A - Ultra-high pressure container for preparing semiconductor material and use method thereof - Google Patents
Ultra-high pressure container for preparing semiconductor material and use method thereof Download PDFInfo
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- CN114294552A CN114294552A CN202111541752.5A CN202111541752A CN114294552A CN 114294552 A CN114294552 A CN 114294552A CN 202111541752 A CN202111541752 A CN 202111541752A CN 114294552 A CN114294552 A CN 114294552A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000000463 material Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000007789 sealing Methods 0.000 claims abstract description 255
- 230000006835 compression Effects 0.000 claims abstract description 19
- 238000007906 compression Methods 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 23
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910002804 graphite Inorganic materials 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 210000004907 gland Anatomy 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910003296 Ni-Mo Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000015097 nutrients Nutrition 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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Abstract
The invention discloses an ultrahigh pressure container for preparing semiconductor materials, which comprises: the container comprises a container body, a threaded sleeve, a first sealing plug, a sealing ring, a second sealing plug and a compression nut. The invention also discloses a use method of the ultrahigh-pressure container for preparing the semiconductor material. The invention has reliable sealing, can meet the sealing requirement of an ultrahigh pressure container for semiconductor materials, and has the advantages of convenient processing and manufacturing, small occupied high-pressure space, simple and compact structure, convenient assembly, disassembly and opening, high reliability, convenient maintenance and wide application range.
Description
Technical Field
The invention belongs to the technical field of ultrahigh pressure vessels, and particularly relates to an ultrahigh pressure vessel for semiconductor material preparation and a using method thereof.
Background
With the expansion of application markets of 5G communication, new energy vehicles and the like, the third-generation semiconductor industry is rapidly developing, silicon carbide (SiC) and gallium nitride (Ga) are taken as representatives of the third-generation semiconductors, and the third-generation semiconductors become the leading edge and the hot spot of the current semiconductor research, and can be widely applied to various fields of energy, traffic, information, national defense and the like by virtue of the performance advantages of large forbidden bandwidth, high breakdown electric field strength, strong radiation resistance and the like.
The temperature required by the preparation of gallium nitride (Ga) can sometimes reach 600 ℃, the pressure is usually 150 MPa-300 MPa, even more 600MPa, and meanwhile, the preparation can be realized only in the environment of ammonia medium, and the preparation environment is usually provided by an ultrahigh pressure container. At present, Cr-Ni-Mo or Cr-Ni-Mo-V and other low-alloy high-strength steel is mostly adopted as steel for the ultrahigh pressure vessel, the use temperature range is-40 ℃ to 400 ℃, and the working temperature born by the ultrahigh pressure vessel required by the preparation of third-generation semiconductor materials greatly exceeds the use temperature range of the existing ultrahigh pressure vessel, so that the manufacturing of a novel ultrahigh pressure vessel is inevitable.
Disclosure of Invention
The invention aims to provide an ultrahigh pressure vessel for preparing a semiconductor material and a using method thereof, wherein the vessel is reliable in sealing, can meet the sealing requirement of the ultrahigh pressure vessel for the semiconductor material, and provides a preparation environment for the third generation of semiconductor materials.
The technical scheme is as follows:
an ultra-high pressure vessel for semiconductor material production, comprising: the container comprises a container body, a threaded sleeve, a first sealing plug, a sealing ring, a second sealing plug and a compression nut; the container body is of a cylindrical structure with openings at two ends, a pressure cavity is arranged in the middle of the container body, and cavity internal threads are respectively arranged on the inner walls at two ends of the outer side of the pressure cavity; one end of the first sealing plug is provided with a first sealing plug end, the other end of the first sealing plug is provided with a first sealing plug external thread, and the first sealing plug end is arranged in the pressure cavity; one end of the second sealing plug is provided with a second sealing plug end, the other end of the second sealing plug is provided with a second sealing plug external thread, the second sealing plug end is installed in the pressure cavity, the second sealing plug is axially provided with a connecting through hole, and the second sealing plug end and the first sealing plug end are opposite in position; the outer wall of the threaded sleeve is provided with threaded sleeve external threads, the two threaded sleeves are respectively sleeved on the first sealing plug and the second sealing plug and positioned on the outer sides of the end heads of the first sealing plug and the second sealing plug, and the threaded sleeve external threads are connected to the cavity internal threads; sealing rings are respectively sleeved on the first sealing plug and the second sealing plug, one sealing ring is positioned between the end head of the first sealing plug and the threaded sleeve, and the other sealing ring is positioned between the end head of the second sealing plug and the threaded sleeve; the two compression nuts are respectively connected to the first sealing plug external thread and the second sealing plug external thread, and the two compression nuts are respectively located on the outer sides of the two thread sleeves.
Furthermore, the first sealing plug and the second sealing plug are respectively sleeved with a sealing press ring, and the two sealing press rings are respectively positioned between the end head of the first sealing plug and the sealing ring and between the end head of the second sealing plug and the sealing ring.
Furthermore, the sealing ring is a metal double-conical-surface sealing ring, the end surfaces of two sides of the sealing ring are respectively provided with an outer sealing ring conical surface and an inner sealing ring conical surface, the outer sealing ring conical surface and the inner sealing ring conical surface are respectively wound with a graphite sealing strip, and a chamfer surface is connected between the outer sealing ring conical surface and the inner sealing ring conical surface.
Furthermore, a first compression ring conical surface and a second compression ring conical surface are respectively arranged at two ends of the sealing compression ring, and the first compression ring conical surface is attached to the inner sealing ring conical surface; the outer wall of the second sealing plug end is provided with a second sealing plug end ring conical surface, and the outer wall of the first sealing plug end is provided with a first sealing plug end ring conical surface; the second pressing ring conical surfaces of the two sealing pressing rings are respectively attached to the second sealing plug end ring conical surface and the first sealing plug end ring conical surface.
Furthermore, the inner threads of the cavity and the outer threads of the thread sleeve adopt sawtooth threads.
Further, the outer diameter of the first sealing plug end is larger than that of the first sealing plug external thread, and the outer diameter of the second sealing plug end is larger than that of the second sealing plug external thread.
Further, the openings at the two ends of the connecting through hole are respectively positioned at the two ends of the second sealing plug.
Furthermore, a pressure explosion-proof device is connected to the external thread of the second sealing plug, the connecting through hole is communicated with the pressure explosion-proof device, and the end part of the second sealing plug and the pressure explosion-proof device are sealed through a spherical metal lens gasket.
The use method of the ultrahigh-pressure container for preparing the semiconductor material comprises the following steps:
dividing a pressure cavity of the container body into a raw material area and a growth area, then filling crystal growth raw materials into the raw material area, and putting seed crystals in the growth area;
liquid ammonia is added into the pressure cavity, the container body 1 is heated according to different temperature intervals to enable crystals to grow, and after the crystals grow, the crystals are cooled to room temperature and taken out.
Preferably, after the liquid ammonia reaches a predetermined filling amount, the pressure is increased when the temperature reaches 450 to 650 ℃, the pressure is maintained when the pressure reaches a pressure required for growth, the pressure is maintained at 150 to 300MPa, and the growth time is 2 to 14 weeks.
Compared with the prior art, the invention has the following advantages:
1. the invention has reliable sealing, can meet the sealing requirement of the ultrahigh pressure container for the semiconductor material, and provides a preparation environment for the third generation semiconductor material.
The sealing assembly adopts a double-conical-surface self-tightening sealing structure, the structure is formed by sealing the conical surface of the sealing ring and the conical surface of the cylinder body due to different angles, and the sealing assembly has the characteristic of better sealing performance along with the rise of the internal pressure of the container.
The sealing assembly consisting of the sealing ring, the sealing press ring and the graphite sealing belt is mutually matched, so that the sealing performance is further enhanced.
2. The invention can meet the high-temperature and high-pressure environment of semiconductor preparation, solves the problem of preparation of semiconductor materials in the high-temperature and high-pressure ammonia medium environment, and improves the preparation efficiency and stability of the semiconductor materials; the device has the advantages of convenient processing and manufacturing, small occupied high-pressure space, simple and compact structure, convenient assembly, disassembly and opening, high reliability, convenient maintenance and wide application range.
Drawings
FIG. 1 is a structural view of an ultra high pressure vessel for semiconductor material production in the present invention.
FIG. 2 is a front view of the insert of the present invention;
FIG. 3 is a sectional view taken along line A-A of the insert of the present invention;
FIG. 4 is a schematic view of a buttress thread of the present invention;
FIG. 5 is a structural sectional view of a seal ring according to the present invention;
fig. 6 is a structural sectional view of the sealing collar of the present invention.
Detailed Description
The following description sufficiently illustrates specific embodiments of the invention to enable those skilled in the art to practice and reproduce it.
FIG. 1 is a schematic diagram of an ultrahigh-pressure vessel for producing a semiconductor material according to the present invention.
An ultra-high pressure vessel for semiconductor material production, comprising: the container comprises a container body 1, a threaded sleeve 2, a first sealing plug 3, a sealing ring 4, a sealing press ring 5, a graphite sealing strip 6, a second sealing plug 7 and a compression nut 8.
The container body 1 is of a cylindrical structure with two open ends, a pressure cavity is arranged in the middle of the container body, and cavity internal threads are respectively arranged on the inner walls of the two ends of the outer side of the pressure cavity.
One end of the first sealing plug 3 is provided with a first sealing plug end, the other end is provided with a first sealing plug external thread, and the first sealing plug end is arranged in the pressure cavity. The outer diameter of the end of the first sealing plug is larger than the outer diameter of the external thread of the first sealing plug.
One end of the second sealing plug 7 is provided with a second sealing plug end, the other end of the second sealing plug 7 is provided with a second sealing plug external thread, the second sealing plug end is installed in the pressure cavity, the second sealing plug 7 is axially provided with a connecting through hole 71, openings at two ends of the connecting through hole 71 are respectively located at two ends of the second sealing plug 7, and the second sealing plug end and the first sealing plug end are opposite in position. The outer diameter of the end of the second sealing plug is larger than the outer diameter of the external thread of the second sealing plug.
As shown in fig. 2, is a front view of the insert 2 of the present invention; as shown in fig. 3, the screw insert 2 of the present invention is shown in a sectional view taken along the line a-a.
The outer wall of the threaded sleeve 2 is provided with threaded sleeve external threads, the two threaded sleeves 2 are respectively sleeved on the first sealing plug 3 and the second sealing plug 7 and are positioned on the outer sides of the end of the first sealing plug and the end of the second sealing plug, and the threaded sleeve external threads are connected to the cavity internal threads.
The insert 2 includes: the threaded section 21 and the non-threaded section 22 are connected at the ends of the threaded section 21 and the non-threaded section 22, and an annular groove 23 is formed in the outer wall between the threaded section 21 and the non-threaded section 22. The thread insert external thread is arranged on the outer wall of the threaded section 21, and the non-threaded section 22 is radially provided with three threaded holes 24.
The non-threaded section 22 is on the outside of the container body 1 when the insert 2 is fully installed. The threaded hole 24 is used during disassembly and assembly, the threaded sleeve 2 can be quickly screwed down and unscrewed from the container body 1, stress is uniform, the service life of threads is improved, labor is saved during operation, and disassembly and assembly are facilitated.
Fig. 4 is a schematic view showing the structure of the buttress thread of the present invention.
The inner thread of the cavity and the outer thread of the thread sleeve adopt sawtooth threads.
The profile bevel angle beta of the working surface A of the sawtooth thread is 3 degrees, and the profile bevel angle of the non-working surface alpha is 45 degrees.
The advantages of the buttress thread are: the root strength is high, and the service life of the thread is prolonged; the internal thread of cavity, swivel nut external screw thread adopt sawtooth screw-thread fit, remain certain clearance each other, easily open, often dismantle occasionally longer life, consequently, this sawtooth thread's long service life, sealed reliability is high.
As shown in fig. 5, a sectional view of the seal ring 4 according to the present invention is shown.
Two sealing rings 4 are respectively sleeved on the first sealing plug 3 and the second sealing plug 7, two sealing press rings 5 are respectively sleeved on the first sealing plug 3 and the second sealing plug 7, the sealing press rings 5 are positioned on the inner sides of the sealing rings 4, and the two sealing press rings 5 are respectively positioned between the first sealing plug end and the sealing ring 4 and between the second sealing plug end and the sealing ring 4.
The sealing ring 4 is a metal double-conical-surface sealing ring, the two side end surfaces are respectively provided with an outer sealing ring conical surface 41 and an inner sealing ring conical surface 42, the horizontal included angle of the outer sealing ring conical surface 41 is 5 degrees, and the horizontal included angle of the inner sealing ring conical surface 42 is 45 degrees; the conical surface 41 of the outer sealing ring is wound with a graphite sealing strip 6, and the graphite sealing strip 6 plays a role in the inner wall of the container body 1 and the sealing ring 4; the inner sealing ring conical surface 42 is wound with the graphite sealing strip 6, and the graphite sealing strip 6 plays a role in sealing the sealing ring 4 and the sealing press ring 5.
A chamfer surface 43 is connected between the outer sealing ring conical surface 41 and the inner sealing ring conical surface 42, and the included angle between the chamfer surface 43 and the inner sealing ring conical surface 42 is 15 degrees; the 15-degree taper angle is poured out to form initial line sealing, the plastic deformation of the sealing ring 4 is increased along with the rise of the internal pressure, the annular line sealing with a certain width is formed, a good sealing effect is achieved, and the sealing reliability of the high-temperature ultrahigh-pressure container is improved.
As shown in fig. 6, the sealing collar 5 of the present invention is a sectional view of the structure.
A first pressing ring conical surface and a second pressing ring conical surface are respectively arranged at two ends of the sealing pressing ring 5, and the first pressing ring conical surface is attached to the end surface of the inner side of the sealing ring 4; the outer wall of the second sealing plug end is provided with a second sealing plug end ring conical surface, and the outer wall of the first sealing plug end is provided with a first sealing plug end ring conical surface; the second pressing ring conical surfaces of the two sealing pressing rings 5 are respectively attached to the second sealing plug end ring conical surface and the first sealing plug end ring conical surface.
Two gland nuts 8 are respectively connected to the first sealing plug external thread and the second sealing plug external thread, the two gland nuts 8 are respectively located on the outer sides of the two thread sleeves 2, and the sealing rings 4 and the sealing press rings 5 which are sleeved on the first sealing plug 3 and the second sealing plug 7 are tightly pressed between the first sealing plug end and the thread sleeve 2 and between the second sealing plug end and the thread sleeve 2.
The pressure explosion-proof device 9 is connected to the external thread of the second sealing plug by screw threads and is positioned outside the gland nut 8, the end part of the second sealing plug 7 is sealed with the pressure explosion-proof device by a spherical metal lens pad 10, the spherical lens pad 10 generates plastic deformation at the contact part, the loop line is changed into a ring belt, the sealing performance is better, the high temperature and high pressure resistance is realized, the sealing is durable and reliable, and the sealing reliability at the interface of the container is ensured; the connecting through hole 71 is communicated with the pressure explosion-proof device 9. When the pressure of the pressure cavity exceeds a set value, the pressure explosion-proof device 9 is switched on, and the pressure of the pressure cavity is released through the connecting through hole 71 and the pressure explosion-proof device 9.
The main stress of the ultrahigh pressure vessel for preparing the semiconductor material is that the pressure elements (the vessel body 1, the screw sleeve 2, the first sealing plug 3 and the second sealing plug 7) are forged by adopting GH4169 high-temperature alloy, and after the solution treatment and the aging treatment, the working pressure is 300MPa at the working temperature of about 600 ℃, so that the favorable comprehensive performance can be kept, and the use working condition of the ultrahigh pressure vessel can be met. The GH4169 high-temperature alloy is an iron-based-chromium-based wrought high-temperature alloy, is a metal material which takes iron, nickel and cobalt as bases and can work for a long time at a high temperature of more than 600 ℃ under the action of certain stress, and has excellent high-temperature strength, good oxidation resistance and corrosion resistance, good fatigue property, good fracture toughness and other comprehensive properties. The high-temperature alloy is a single austenite structure, has good structure stability and use reliability at various temperatures, and can meet the requirements of special use conditions of an ultrahigh-pressure container on used materials. The GH4169 high-temperature alloy has good comprehensive performance within the temperature range of-253 ℃ to 700 ℃, has the first yield strength below 650 ℃ of the deformed high-temperature alloy, and has good fatigue resistance, radiation resistance, oxidation resistance, corrosion resistance, processability and long-term structure stability.
The sealing component is made of 304 or similar stainless steel with high temperature resistance and corrosion resistance, so that the sealing component not only has stable characteristics under high temperature conditions, but also retains sufficient plastic characteristics, and can well meet the high-temperature sealing requirements.
The compression nut 8 and the threaded sleeve 2 are respectively taken down, the first sealing plug 3 can be taken out, the pressure cavity of the container body 1 is opened, semiconductor material preparation raw materials are filled into the pressure cavity, the sealing assembly is installed on the first sealing plug 3, and after the compression nut 8 and the threaded sleeve 2 are screwed, a high-temperature and high-pressure ammonia medium environment can be provided in the pressure cavity, so that the semiconductor material is prepared.
The use method of the ultrahigh-pressure container for preparing the semiconductor material comprises the following specific steps:
step 1: dividing a pressure cavity of the container body 1 into a raw material area and a growth area, then filling crystal growth raw materials into the raw material area, and putting seed crystals in the growth area;
the first sealing plug 3, the threaded sleeve 2, the sealing press ring 5, the sealing ring 4 and the gland nut 8 are installed at one end of the container body 1, and crystal growth raw materials and seed crystals are placed into a pressure cavity of the container body 1.
According to different growth processes of semiconductor materials, a pressure cavity of an ultrahigh pressure container is divided into a raw material area and a growth area. Then the crystal growth raw material is filled into a raw material zone in a high-temperature ultrahigh-pressure container, and seed crystals are placed in the growth zone.
Step 2: liquid ammonia is added into the pressure cavity, the container body 1 is heated according to different temperature intervals to enable crystals to grow, and after the crystals grow, the crystals are cooled to room temperature and taken out.
After liquid ammonia is added into the pressure cavity, the second sealing plug 7, the threaded sleeve 2, the sealing press ring 5, the sealing ring 4 and the compression nut 8 are sequentially installed at the other end of the container body 1 and connected with the pressure explosion-proof device 9.
Liquid ammonia is used as a solvent when the gallium nitride crystal grows by the ammonothermal method, and the transport of nutrients and the growth of the crystal are obtained by selecting proper temperature, pressure and temperature gradient.
After the liquid ammonia reaches the specified filling amount, the ultrahigh pressure container starts to be heated according to different interval temperatures, when the temperature reaches the crystal growth temperature, the growth temperature is usually 450-650 ℃, the pressure is increased, the pressure is maintained after reaching the pressure required by growth, the pressure maintaining pressure is usually 150-300 MPa, and the growth time is usually 2-14 weeks; and after the growth is finished, cooling the ultrahigh pressure container to room temperature, and opening the ultrahigh pressure container to take out the crystal which finishes the growth.
The terminology used herein is for the purpose of description and illustration, rather than of limitation. As the present invention may be embodied in several forms without departing from the spirit or essential characteristics thereof, it should also be understood that the above-described embodiments are not limited by any of the details of the foregoing description, but rather should be construed broadly within its spirit and scope as defined in the appended claims, and therefore all changes and modifications that fall within the meets and bounds of the claims, or equivalences of such meets and bounds are therefore intended to be embraced by the appended claims.
Claims (10)
1. An ultrahigh pressure vessel for semiconductor material production, comprising: the container comprises a container body, a threaded sleeve, a first sealing plug, a sealing ring, a second sealing plug and a compression nut; the container body is of a cylindrical structure with openings at two ends, a pressure cavity is arranged in the middle of the container body, and cavity internal threads are respectively arranged on the inner walls at two ends of the outer side of the pressure cavity; one end of the first sealing plug is provided with a first sealing plug end, the other end of the first sealing plug is provided with a first sealing plug external thread, and the first sealing plug end is arranged in the pressure cavity; one end of the second sealing plug is provided with a second sealing plug end, the other end of the second sealing plug is provided with a second sealing plug external thread, the second sealing plug end is installed in the pressure cavity, the second sealing plug is axially provided with a connecting through hole, and the second sealing plug end and the first sealing plug end are opposite in position; the outer wall of the threaded sleeve is provided with threaded sleeve external threads, the two threaded sleeves are respectively sleeved on the first sealing plug and the second sealing plug and positioned on the outer sides of the end heads of the first sealing plug and the second sealing plug, and the threaded sleeve external threads are connected to the cavity internal threads; sealing rings are respectively sleeved on the first sealing plug and the second sealing plug, one sealing ring is positioned between the end head of the first sealing plug and the threaded sleeve, and the other sealing ring is positioned between the end head of the second sealing plug and the threaded sleeve; the two compression nuts are respectively connected to the first sealing plug external thread and the second sealing plug external thread, and the two compression nuts are respectively located on the outer sides of the two thread sleeves.
2. The ultra-high pressure vessel for preparing semiconductor material according to claim 1, wherein the first sealing plug and the second sealing plug are respectively sleeved with a sealing ring, and the two sealing rings are respectively positioned between the end of the first sealing plug and the sealing ring and between the end of the second sealing plug and the sealing ring.
3. The ultra-high pressure vessel for preparing semiconductor material according to claim 2, wherein the sealing ring is a metal double-cone sealing ring, the two side end faces are respectively provided with an outer sealing ring cone surface and an inner sealing ring cone surface, the outer sealing ring cone surface and the inner sealing ring cone surface are respectively wound with a graphite sealing strip, and a chamfer surface is connected between the outer sealing ring cone surface and the inner sealing ring cone surface.
4. The ultra-high pressure vessel for preparing semiconductor materials according to claim 3, wherein a first compression ring conical surface and a second compression ring conical surface are respectively arranged at two ends of the sealing compression ring, and the first compression ring conical surface is attached to the inner sealing ring conical surface; the outer wall of the second sealing plug end is provided with a second sealing plug end ring conical surface, and the outer wall of the first sealing plug end is provided with a first sealing plug end ring conical surface; the second pressing ring conical surfaces of the two sealing pressing rings are respectively attached to the second sealing plug end ring conical surface and the first sealing plug end ring conical surface.
5. The ultra high pressure vessel for preparing semiconductor material according to claim 1, wherein the internal thread of the cavity and the external thread of the screw sleeve are saw-tooth threads.
6. The ultra high pressure vessel for semiconductor material fabrication as claimed in claim 1, wherein the first sealing plug end has an outer diameter greater than an outer diameter of the first sealing plug external thread and the second sealing plug end has an outer diameter greater than an outer diameter of the second sealing plug external thread.
7. The ultra high pressure vessel for semiconductor material fabrication as claimed in claim 1, wherein openings connecting both ends of the through-hole are respectively provided at both ends of the second sealing plug.
8. The ultra high pressure vessel for semiconductor material production as claimed in claim 1, wherein a pressure explosion-proof device is connected to the external thread of the second sealing plug, the connecting through hole communicates with the pressure explosion-proof device, and the end of the second sealing plug and the pressure explosion-proof device are sealed by a spherical metal lens gasket.
9. The method for using the ultrahigh pressure vessel for semiconductor material production according to any one of claims 1 to 8, comprising:
dividing a pressure cavity of the container body into a raw material area and a growth area, then filling crystal growth raw materials into the raw material area, and putting seed crystals in the growth area;
liquid ammonia is added into the pressure cavity, the container body 1 is heated according to different temperature intervals to enable crystals to grow, and after the crystals grow, the crystals are cooled to room temperature and taken out.
10. The method of using an ultrahigh pressure vessel for producing a semiconductor material according to claim 9, wherein after the liquid ammonia is filled to a predetermined amount, the pressure is increased when the temperature reaches 450 ℃ to 650 ℃ and the pressure is maintained at 150MPa to 300MPa after the pressure reaches a pressure required for growth, and the growth time is 2 weeks to 14 weeks.
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