CN114290229B - Polishing method of semiconductor wafer and indium phosphide wafer - Google Patents
Polishing method of semiconductor wafer and indium phosphide wafer Download PDFInfo
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Abstract
The application relates to the field of semiconductor wafer processing, and particularly discloses a polishing method of a semiconductor wafer and an indium phosphide wafer. The polishing method of the semiconductor wafer is to polish the ground semiconductor wafer by using polishing equipment, polishing solution and a polishing pad. The polishing solution comprises a rough polishing solution and a fine polishing solution. The pH value of the coarse polishing solution is 4-5, the particle size of the silicon dioxide is 50-80nm, the pH value of the fine polishing solution is 6-7, and the particle size of the silicon dioxide is 20-30nm. The roughness Ra of the semiconductor wafer is less than or equal to 0.2nm, the flatness is within 5 mu m, the curvature is within 4 mu m, and the warping degree is within 2 mu m. Through the polishing solution, the polishing equipment is matched with the polishing pad, the surface quality of the indium phosphide wafer is guaranteed, the production efficiency is improved, and the polishing solution is suitable for mass production.
Description
Technical Field
The present application relates to the field of semiconductor wafer processing, and more particularly to a method of polishing a semiconductor wafer and an indium phosphide wafer.
Background
Semiconductor chips are mainly used in various fields such as electronics, communications, and energy, and are receiving more and more attention. The process of preparing the semiconductor wafer mainly comprises the steps of preparing a single crystal rod, cutting the single crystal rod by multiple lines, chamfering the wafer, grinding the wafer, thinning the wafer, polishing the wafer, cleaning and packaging and the like. It is clear that wafer polishing is the last and important step in the preparation of semiconductor wafers, and the quality of wafer polishing directly affects the quality of the wafers.
In wafer polishing, chemical Mechanical Polishing (CMP) is one of the most common methods, capable of producing highly planar wafers. In CMP, the quality of the polishing liquid directly affects the polishing quality of the wafer. In addition, a certain amount of polishing debris is generated during the polishing process. The polishing debris can scratch the wafer surface, causing irreparable damage to the wafer. In addition, the polishing process comprises rough polishing and finish polishing, and from the rough polishing to the finish polishing, the polishing solution and the polishing pad need to be replaced; or transferring the wafer after rough polishing to another polishing machine for fine polishing. In the replacement process, a large amount of time is wasted, and the problems of low production efficiency and the like are caused.
Disclosure of Invention
In order to improve the quality of the surface of a semiconductor wafer, the present application provides a polishing method of a semiconductor wafer and an indium phosphide wafer.
In a first aspect, the present application provides a method of polishing a semiconductor wafer by polishing a ground semiconductor wafer with a polishing apparatus, a polishing liquid and a polishing pad,
the polishing solution comprises a rough polishing solution and a fine polishing solution, wherein the rough polishing solution comprises, by weight, 10-12 parts of sodium dihydrogen phosphate, 20-30 parts of hydrogen peroxide, 18-22 parts of sodium hypochlorite, 12-15 parts of silicon dioxide and 5-10 parts of concentrated sulfuric acid, the pH value of the rough polishing solution is 4-5, the particle size of the silicon dioxide is 50-80nm, the fine polishing solution comprises, by weight, 10-12 parts of sodium dihydrogen phosphate, 15-20 parts of hydrogen peroxide, 18-22 parts of sodium hypochlorite and 8-12 parts of silicon dioxide, the pH value of the fine polishing solution is 6-7, and the particle size of the silicon dioxide is 20-30nm.
In the polishing of semiconductor wafers, polishing fluid is an important part of the polishing process, and affects the quality and speed of the polishing. In the present application, the pH of the crude polishing solution is from 4 to 5, and the semiconductor wafer is polished under such pH conditions. The rough polishing solution oxidizes the surface of the semiconductor wafer, so that the corrosion speed is increased, and the removal rate is improved. The particle size of the silica is 50-80nm, and the silica is present as an abrasive. When the particle size of the silicon dioxide in the rough polishing solution is less than 50nm, the removal rate is low; when the particle size of the silicon dioxide in the rough polishing solution is greater than 80nm, the risk of scratching the semiconductor wafer increases.
In the fine polishing process, the semiconductor wafer is subjected to fine polishing through the synergistic effect of sodium dihydrogen phosphate, hydrogen peroxide, sodium hypochlorite and silicon dioxide. The pH value of the fine polishing solution is 6-7, and the particle size of the silicon dioxide is 20-30nm. The fine polishing solution keeps a small removal rate for the semiconductor wafer, so that the roughness of the semiconductor wafer is kept at a low level.
The polishing solution also comprises 4-8 parts of a dispersing agent and 2-5 parts of a pH value regulator. The dispersing agent can disperse the polishing solution, so that the silicon dioxide is dispersed more uniformly. The pH value regulator can regulate the pH values of the rough polishing solution and the fine polishing solution.
Preferably, the polishing pad is SUBA600.
The quality of the polishing pad also determines the quality of the semiconductor wafer during polishing. In the course of rough polishing, polyurethane-based polishing pads are mostly used. The polyurethane-based polishing pad can improve the removal rate of the semiconductor wafer. In the finish polishing process, a non-woven fabric polishing pad is most used. The non-woven fabric polishing pad has the advantages of small hardness, large compression ratio, good elasticity and the like. The non-woven fabric polishing pad can reduce the roughness of a semiconductor wafer.
In the present application, the polishing pad used is SUBA600. The SUBA600 has moderate hardness and compression ratio, is suitable for the processes of rough polishing and fine polishing, is matched with rough polishing liquid and fine polishing liquid for use, ensures the surface quality of a semiconductor wafer, can reduce the time for replacing a polishing pad, improves the production efficiency, and is suitable for mass production and preparation. The SUBA600 is purchased from Shanghai assist light technology Inc., and the SUBA600 has a hardness of 81 and a compression ratio of 2.9.
Preferably, the polishing device comprises a grinding disc, an air supply pipe is coaxially arranged right above the grinding disc, a supporting device for supporting the semiconductor wafer is arranged on the peripheral surface of the air supply pipe, the supporting device comprises a plurality of cross bars fixedly connected on the peripheral surface of the air supply pipe, the central axes of the cross bars are parallel to the surface of the grinding disc, the horizontal pole is kept away from the one end of blast pipe and is provided with the montant respectively, and is a plurality of the central axis perpendicular to abrasive disc surface of montant is a plurality of the lower extreme of montant is provided with the bonding seat respectively, keeps away from montant one side at the bonding seat and bonds and have semiconductor wafer be provided with water pipe, rough polish liquid pipe and finish polish liquid pipe in the blast pipe.
During the polishing process, polishing debris is generated as the polishing liquid and the polishing pad continuously polish the semiconductor wafer. A part of the polishing debris is separated from the surface of the polishing pad by the centrifugal force of the polishing pad, and the rest of the polishing debris remains in the polishing pad to damage the semiconductor wafer. In this application, at the coaxial blast pipe that sets up directly over the abrasive disc, through the air supply mode of intermittent type formula, blow surplus polishing bits off the abrasive disc surface.
At present, a conventional apparatus is provided with a bonding base which is eccentrically disposed, and a plurality of semiconductor chips are bonded to the bonding base. When the air supply pipe performs an air supply operation to the polishing pad, polishing debris may be caught between the plurality of semiconductor wafers, and when polishing is continued, the polishing debris may move again between the semiconductor wafers and the polishing pad to damage the semiconductor wafers. In the application, a plurality of bonding seats are arranged, only one semiconductor wafer is bonded on each bonding seat, the size of the semiconductor wafer can be 6 inches at most, and the size of the bonding seat can be changed according to actual production requirements. When the air supply pipe supplies air, the bonding seats are uniformly distributed around the air supply pipe, so that the obstruction of the semiconductor wafer to polishing scraps is reduced. Through the action of wind power and centrifugal force, the polishing scraps on the grinding disc are cleaned more cleanly, the damage of the polishing scraps to the semiconductor wafer is reduced, and the surface roughness Ra of the semiconductor wafer is kept to be less than or equal to 0.2nm.
A water pipe, a rough polishing liquid pipe and a fine polishing liquid pipe are arranged in the blast pipe. Pumping ultrapure water, coarse polishing solution and fine polishing solution to the center of the grinding disc by a water pump through a water pipe, a coarse polishing solution pipe and a fine polishing solution pipe; and then the ultrapure water, the coarse polishing solution and the fine polishing solution are moved to a position between the semiconductor wafer and the polishing pad under the action of centrifugal force of the grinding disc, so that the semiconductor wafer is polished. By using the pumping of the water pump, the production time can be saved, and the production efficiency can be improved.
In the present application, the polishing apparatus comprises the following movement or operating steps: first, a thinned semiconductor wafer is bonded to a bonding pad, and a polishing pad is bonded to an abrasive disk. Pumping ultrapure water onto the polishing pad through a water pipe by using a water pump; starting the grinding disc to enable the semiconductor wafer to be in contact with the polishing pad, and pumping the rough polishing liquid to the polishing pad for rough polishing; after 0.5-1 minute, starting a fan, and cleaning polishing scraps through an air supply pipe; and adding the coarse polishing solution again, starting the fan again after 0.5-1 minute to clean polishing scraps, and ensuring that the possibility of existence of the polishing scraps is reduced to the minimum through multiple times of cleaning. And after 10-20 minutes, pumping the fine polishing solution onto a polishing pad for fine polishing, starting a fan for 0.5-1 minute, cleaning polishing scraps through an air supply pipe, adding the fine polishing solution again, starting the fan again after 0.5-1 minute, cleaning the polishing scraps, and detecting the properties of the semiconductor wafer, such as roughness, flatness and the like after 4-5 minutes.
Preferably, the central axes of the water pipe, the rough polishing liquid pipe and the fine polishing liquid pipe are arranged in a regular triangle.
In polishing equipment, be regular triangle-shaped with the central axis of water pipe, rough polishing liquid pipe and finish polishing liquid pipe and set up, arrange more regularly, reduce the influence to the blast pipe air feed, make from blast pipe to the amount of wind evenly distributed on the polishing pad.
Preferably, the coarse polishing solution further comprises 1-1.5 parts of hydroxyethyl cellulose, and the fine polishing solution further comprises 0.6-0.8 part of hydroxyethyl cellulose.
Hydroxyethyl cellulose is added to both the rough polishing solution and the fine polishing solution. The hydroxyethyl cellulose can improve the dispersibility and viscosity of the polishing solution, so that the viscosity of the coarse polishing solution is 30-50cP, and the viscosity of the fine polishing solution is 10-15cP. By using the polishing equipment and the polishing solution, the surface quality of the semiconductor wafer can be improved, and the production efficiency can be improved.
Preferably, the air speed in the air supply pipe is 0.3-5.4m/s, and the distance between the lower end of the air supply pipe and the upper surface of the grinding disc is 10-25mm.
In the application, the wind speed in the air supply pipe is 0.3-5.4m/s, the wind speed in the rough polishing process is 3-5.4m/s, and the wind speed in the fine polishing process is 0.3-3m/s. When the wind speed is less than 0.3m/s, the wind power is insufficient, and the polishing scraps cannot be blown off the grinding disc. When the wind speed is more than 5.4m/s, the wind power is too high, the polishing solution splashes, and the working environment is polluted.
The distance between the lowest part of the blast pipe and the grinding disc is 10-25mm, the distance is optimal, and the distance is matched with the wind speed, so that the polishing dust can be well removed.
Preferably, a bell mouth is arranged at the lower end of the air supply pipe, and the opening direction of the bell mouth faces the grinding disc.
In the polishing apparatus in the present application, a bell mouth is provided at the lower end of the blast pipe, and the opening direction of the bell mouth is toward the abrasive disk. The horn mouth can change the flow direction of wind, makes more even blowing of amount of wind to each bonding seat, can clear up the polishing bits between every semiconductor wafer and the abrasive disc, reduces the harm of polishing bits to semiconductor wafer, guarantees that semiconductor wafer has less roughness, crookedness and angularity.
Preferably, the polishing pressure in the polishing is 0.3 to 0.6kg/cm 2 The rotation speed of the grinding disc is 20-40r/min, and the flow rate of the polishing solution is 0.4-0.5L/min.
During polishing, the quality of a semiconductor wafer is affected by a variety of process conditions. The polishing pressure and the rotational speed of the polishing platen directly affect the removal rate of the semiconductor wafer, which in turn affects the production efficiency. When the polishing pressure is more than 0.6kg/cm during polishing 2 When the rotating speed of the grinding disc is more than 40r/min, the removal rate can be increased, and the production efficiency is improved. But reduces the surface quality of the semiconductor wafer. When the polishing pressure is less than 0.3kg/cm during polishing 2 When the rotation speed of the polishing disk is less than 20r/min, the surface quality of the semiconductor wafer can be ensured, but the removal rate is low, which is very uneconomical.
During the polishing process, the semiconductor wafer is continuously rubbed against the polishing pad, generating heat. At this time, the temperature of the polishing liquid is required to be continuously lowered. Therefore, the flow rate of the polishing liquid is 0.4-0.5L/min. When the flow rate of the polishing solution is lower than 0.4L/min, the liquid amount of the polishing solution is insufficient; when the flow rate of the polishing solution is greater than 0.5L/min, the polishing solution is wasted.
In a specific embodiment, in the course of rough polishing, the polishing pressure during polishing is 0.6kg/cm 2 The rotating speed of the grinding disc is 40r/min, and the flow rate of the polishing solution is 0.5L/min. In the fine polishing process, the polishing pressure during polishing was 0.3kg/cm 2 The rotating speed of the grinding disc is 20r/min, and the flow rate of the polishing solution is 0.4L/min. The surface quality and production efficiency of the semiconductor wafer are high.
In a second aspect, the present application provides an indium phosphide wafer prepared by polishing according to the polishing method of the present application.
Preferably, the roughness Ra of the indium phosphide wafer is less than or equal to 0.2nm, the flatness is within 5 mu m, the bow is within 4 mu m, and the warp is within 2 mu m.
The polishing solution, the polishing pad and the polishing equipment in the application are utilized to polish the thinned indium phosphide wafer to prepare the indium phosphide wafer. The indium phosphide wafer has high surface quality and low roughness, the roughness Ra of the indium phosphide wafer is less than or equal to 0.2nm, the flatness is within 5 mu m, the curvature is within 4 mu m, and the warping degree is within 2 mu m.
The wind power of the blast pipe and the centrifugal force of the grinding disc can improve the cleaning effect on polishing scraps, and further improve the surface quality of the indium phosphide wafer. Ultrapure water, coarse polishing solution and fine polishing solution are pumped by a water pump and then are matched with the polishing pad, so that the polishing efficiency of the indium phosphide wafer can be improved, and the time and cost are saved.
In summary, the present application has the following beneficial effects:
1. the pH value of the rough polishing solution is 4-5, the particle size of silicon dioxide is 50-80nm, and the viscosity of the rough polishing solution is 30-50cP; the pH value of the fine polishing solution is 6-7, the particle size of silicon dioxide is 20-30nm, the viscosity of the fine polishing solution is 10-15cP, and the surface quality and the production efficiency of the semiconductor wafer can be improved;
2. in the application, an air supply pipe is added in polishing equipment, and a supporting device is matched, so that polishing scraps are better cleaned through wind power and centrifugal force, the damage of the polishing scraps to a semiconductor wafer is reduced, the surface quality is improved, the roughness Ra is less than or equal to 0.2nm, the flatness is within 5 microns, the curvature is within 4 microns, and the warping degree is within 2 microns;
3. through mutually supporting of polishing equipment, polishing solution and polishing pad in this application, improve production efficiency when improving surface quality, be applicable to mass production.
Drawings
FIG. 1 is a schematic overall view of a polishing process;
FIG. 2 is a longitudinal sectional view of FIG. 1, showing the positional relationship between the air supply pipe, the water pipe, the rough polishing liquid pipe, the fine polishing liquid pipe and the polishing disc;
fig. 3 is a transverse sectional view of fig. 1, which is used for showing the distribution of the rough polishing solution pipe and the fine polishing solution pipe in the air supply pipe.
In the figure, 1, a grinding disc; 2. a polishing pad; 3. an air supply pipe; 31. a fan; 32. a bell mouth; 33. a fixed mount; 4. a support device; 41. a cross bar; 42. a vertical rod; 43. a bonding base; 44. a butterfly bolt; 5. a water pump; 51. a water pipe; 52. a rough polishing liquid pipe; 53. a finish polishing liquid pipe; 6. a semiconductor wafer.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples.
Starting materials
The raw materials used in the application are all commercially available and have no special requirements.
Examples
And polishing the thinned indium phosphide wafer by using polishing equipment, polishing solution and a polishing pad, wherein the thickness of the thinned indium phosphide wafer is 6 microns, the roughness is 100nm, and the diameter is 75mm.
Example 1
Rough polishing solution: 1.1kg of sodium dihydrogen phosphate, 2.5kg of hydrogen peroxide, 2kg of sodium hypochlorite, 1.4kg of silicon dioxide, 0.5kg of concentrated sulfuric acid, 0.6kg of dispersing agent, 0.3kg of pH value regulator and 100kg of ultrapure water; the particle size of the silicon dioxide is 50nm, and the pH value of the coarse polishing solution is 5.
Fine polishing solution: 1kg of sodium dihydrogen phosphate, 1.5kg of hydrogen peroxide, 1.8kg of sodium hypochlorite, 0.8kg of silicon dioxide, 0.6kg of dispersing agent, 0.3kg of pH value regulator and 100kg of ultrapure water; the particle size of the silicon dioxide is 20nm, and the pH value of the fine polishing solution is 7.
An IC1000 type polishing pad is selected in the rough polishing process, and a Politex type polishing pad is selected in the fine polishing process.
The polishing apparatus was an SPM-19 single-side polisher (manufactured by Nippon Dougo Co., ltd.).
In the course of rough polishing, the polishing pressure during polishing was 0.6kg/cm 2 The rotation speed of the grinding disc 1 is 40r/min, and the flow rate of the polishing solution is 0.5L/min. In the fine polishing process, the polishing pressure during polishing was 0.3kg/cm 2 The rotating speed of the grinding disc 1 is 20r/min, and the flow rate of the polishing solution is 0.4L/min.
Example 2
Example 2 differs from example 1 in that the coarse polishing solution in example 2: the particle size of the silicon dioxide is 65nm, and the pH value of the coarse polishing solution is 4.
Fine polishing solution: the particle size of the silicon dioxide is 25nm, and the pH value of the fine polishing solution is 6.
Example 3
Example 3 differs from example 1 in that the coarse polishing solution in example 3: the particle size of the silicon dioxide is 80nm, and the pH value of the coarse polishing solution is 4.
Fine polishing solution: the grain diameter of the silicon dioxide is 30nm, and the pH value of the fine polishing solution is 6.
Example 4
Example 4 is different from example 2 in that the polishing apparatus in example 4 is shown in fig. 1. The polishing device comprises an abrasive disc 1, and the abrasive disc 1 can rotate along the axis of the abrasive disc 1 by the driving of a power device (not shown in the figure), so that the indium phosphide wafer is polished. A polishing pad 2 is bonded to the upper surface of the polishing platen 1. An air supply pipe 3 is coaxially arranged right above the grinding disc 1, one end of the air supply pipe 3 is connected to a fan 31, the other end of the air supply pipe 3 faces the grinding disc 1, a bell mouth 32 is arranged at one end facing grinding, and the opening direction of the bell mouth 32 faces the grinding disc 1. The wind speed is 4.5m/s in the rough polishing process; in the fine polishing process, the wind speed is 1m/s, and the distance between the lowest part of the blast pipe 3 and the grinding disc 1 is 18 +/-0.5 mm.
Be provided with on the global of blast pipe 3 and be used for strutting arrangement 4, strutting arrangement 4 includes six horizontal poles 41 of rigid coupling on blast pipe 3 global, and six horizontal poles 41 are around the central axis evenly distributed of blast pipe 3, and the central axis of horizontal pole 41 is on a parallel with abrasive disc 1 surface. A vertical rod 42 is respectively arranged at one end of each cross rod 41 far away from the air supply pipe 3, the central axis of each vertical rod 42 is perpendicular to the surface of the grinding disc 1, and the vertical rods 42 are connected with the cross rods 41 through butterfly bolts 44. The lower ends of the vertical rods 42 are respectively fixedly connected with bonding seats 43, and indium phosphide wafers are bonded on the sides of the bonding seats 43 far away from the vertical rods 42.
Referring to fig. 2 and 3, a water pipe 51, a rough polishing liquid pipe 52 and a finish polishing liquid pipe 53 are disposed in the air supply pipe 3, one ends of the water pipe 51, the rough polishing liquid pipe 52 and the finish polishing liquid pipe 53 are connected to the water pump 5, and the other ends of the water pipe 51, the rough polishing liquid pipe 52 and the finish polishing liquid pipe 53 pass through the air supply pipe 3 and extend to the lowest position of the bell mouth 32. Ultrapure water, rough polishing solution and fine polishing solution are respectively pumped to the grinding disc 1 by a water pump 5. Two fixing frames 33 are arranged on the inner wall of the air supply pipe 3, and the water pipe 51, the rough polishing liquid pipe 52 and the fine polishing liquid pipe 53 can be fixed by the fixing frames 33, so that the central axes of the water pipe 51, the rough polishing liquid pipe 52 and the fine polishing liquid pipe 53 are in a regular triangle.
The operation process comprises the following steps: first, a thinned indium phosphide wafer was bonded to the bonding pad 43, and the IC1000 type polishing pad 2 was bonded to the polishing platen 1. Then, ultrapure water is pumped to the IC1000 type polishing pad 2 through the water pipe 51 by the water pump 5; starting the grinding disc 1 to enable the indium phosphide wafer to be in contact with the IC1000 type polishing pad 2, and pumping the rough polishing liquid onto the IC1000 type polishing pad 2 for rough polishing; the fan 31 is started once every 0.5 minute, and the polishing scraps are cleaned through the blast pipe 3. After 10 minutes the rough polishing was completed, the IC1000 type polishing pad 2 was replaced with the Politex type polishing pad 2, and ultrapure water was pumped up to the Politex type polishing pad 2 through the water pipe 51 by the water pump 5. The fine polishing liquid was pumped to a Politex type polishing pad 2 for fine polishing, and the blower 31 was started once every 1 minute. Finishing fine polishing after 3 minutes, and detecting the properties of the indium phosphide wafer such as roughness, flatness and the like.
Example 5
Example 5 is different from example 4 in that the polishing pad 2 in example 5 is SUBA600.
Example 6
Example 6 is different from example 5 in that 1.2kg of hydroxyethyl cellulose was added to the crude polishing solution of example 6, and the viscosity of the crude polishing solution was 40cP. 0.7kg of hydroxyethyl cellulose was added to the fine polishing solution, and the viscosity of the fine polishing solution was 13cP.
Example 7
Example 7 is different from example 6 in that the viscosity of the rough polishing liquid of example 7 is 50cP and the viscosity of the fine polishing liquid is 15cP.
Example 8
Example 8 is different from example 6 in that the viscosity of the rough polishing liquid in example 8 is 30cP and the viscosity of the fine polishing liquid is 10cP.
Comparative example
Comparative example 1
Comparative example 1 is different from example 1 in that in comparative example 1, the pH of the crude polishing liquid is 6.
Comparative example 2
Comparative example 2 is different from example 1 in that in comparative example 2, the pH of the crude polishing liquid is 3.
Comparative example 3
Comparative example 3 is different from example 1 in that in comparative example 3, the particle size of silica in the crude polishing liquid is 40nm.
Comparative example 4
Comparative example 4 is different from example 1 in that in comparative example 4, the particle size of silica in the crude polishing liquid is 100nm.
Comparative example 5
Comparative example 5 is different from example 1 in that in comparative example 5, the pH of the fine polishing liquid is 8.
Comparative example 6
Comparative example 6 is different from example 1 in that in comparative example 6, the particle size of silica in the fine polishing liquid is 40nm.
Performance test
1. Inspection of surface quality of semiconductor wafers
The surface quality was examined for examples 1 to 8 and comparative examples 1 to 6. The surface quality test includes surface roughness, flatness, curvature and warping degree.
The surface roughness Ra of the indium phosphide wafer was tested by AFM (atomic force microscope). The surface roughness Ra is less than or equal to 0.2, the flatness is less than 6 mu m, the warping degree is less than 8 mu m, and the bending degree is less than 5 mu m, thereby the product is qualified. Specific detection results are shown in table 1.
TABLE 1 test results
| Categories | Ra/nm | Flatness/μm | Warp degree/mum | Tortuosity/. Mu.m |
| Example 1 | 0.2 | 4.93 | 1.98 | 3.95 |
| Example 2 | 0.186 | 4.75 | 1.88 | 3.84 |
| Example 3 | 0.195 | 4.88 | 1.93 | 3.93 |
| Example 4 | 0.175 | 4.66 | 1.72 | 3.77 |
| Example 5 | 0.169 | 4.61 | 1.68 | 3.67 |
| Example 6 | 0.160 | 4.57 | 1.66 | 3.64 |
| Example 7 | 0.166 | 4.59 | 1.69 | 3.68 |
| Example 8 | 0.163 | 4.62 | 1.68 | 3.66 |
| Comparative example 1 | 0.215 | 5.12 | 2.03 | 4.21 |
| Comparative example 2 | 0.225 | 5.21 | 2.35 | 4.31 |
| Comparative example 3 | 0.198 | 5.04 | 1.97 | 4.03 |
| Comparative example 4 | 0.233 | 5.18 | 2.14 | 4.31 |
| Comparative example 5 | 0.217 | 5.26 | 2.02 | 4.12 |
| Comparative example 6 | 0.205 | 5.01 | 2.05 | 4.18 |
As can be seen by combining examples 1-8 with comparative examples 1-6 and Table 1, the surface roughness Ra of the indium phosphide wafers prepared in examples 1-8 is less than or equal to 0.2nm, the flatness is within 5 μm, the bow is within 4 μm, and the warp is within 2 μm. In particular, the InP wafer prepared in example 6 had a surface roughness Ra of 0.160nm, a flatness of 4.57 μm, a bow of 3.64 μm, and a warp of within 1.66. Mu.m.
As can be seen by combining examples 1 to 3 and comparative examples 1 to 6 with Table 1, in comparative examples 1 to 6, the pH of the crude polishing liquid was out of the range of 4 to 5, the particle diameter of silica was out of the range of 50 to 80nm, the pH of the fine polishing liquid was out of the range of 6 to 7, and the particle diameter of silica was out of the range of 20 to 30nm. The indium phosphide wafers prepared in comparative examples 1 to 6 had a surface roughness Ra of > 0.2 and were found to be unsatisfactory. Although the surface roughness Ra of the indium phosphide wafer prepared in comparative example 3 was 0.2nm or less, the production efficiency was low.
2. Production efficiency detection
The production efficiency refers to the number of indium phosphide wafers produced in 1 hour. In order to ensure the accuracy of the test, the same operator is selected to perform the test operation, the number of the indium phosphide wafers prepared in one time is 4, the test is completed within 3 hours, the number of the indium phosphide wafers produced within 1 hour is calculated, and the number is recorded.
The production efficiency was tested in examples 2, 4 and 5, in examples 2 and 4, the polishing pad was replaced from the rough polishing to the finish polishing, and in order to ensure the production efficiency and the test accuracy, the rough polishing was performed for 1.5 hours, and the finish polishing was performed for 1.5 hours after the replacement of the polishing pad. Specific detection results are shown in table 2.
TABLE 2 test results of production efficiency
| Categories | Indium phosphide wafer number/h |
| Example 2 | 10 |
| Example 4 | 12 |
| Example 5 | 18 |
By combining example 2 and example 4 and table 2, it can be seen that example 4 can improve the surface quality of the indium phosphide wafer and improve the production efficiency by using the polishing equipment in the present application, and 12 indium phosphide wafers can be produced per hour.
When example 4 and example 5 were combined and table 2 was combined, it was found that when SUBA600 was used as the polishing pad in example 5, the number of indium phosphide wafers produced per hour was 18 or more.
The present embodiment is only for explaining the present application, and it is not limited to the present application, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present application.
Claims (7)
1. A polishing method of a semiconductor wafer is characterized in that a polished semiconductor wafer is polished by a polishing apparatus, a polishing liquid and a polishing pad;
the polishing solution comprises a coarse polishing solution and a fine polishing solution, wherein the coarse polishing solution comprises, by weight, 10-12 parts of sodium dihydrogen phosphate, 20-30 parts of hydrogen peroxide, 18-22 parts of sodium hypochlorite, 12-15 parts of silicon dioxide, 5-10 parts of concentrated sulfuric acid and 1-1.5 parts of hydroxyethyl cellulose, the pH value of the coarse polishing solution is 4-5, and the particle size of the silicon dioxide is 50-80nm;
the fine polishing solution comprises, by weight, 10-12 parts of sodium dihydrogen phosphate, 15-20 parts of hydrogen peroxide, 18-22 parts of sodium hypochlorite, 8-12 parts of silicon dioxide and 0.6-0.8 part of hydroxyethyl cellulose, wherein the pH value of the fine polishing solution is 6-7, and the particle size of the silicon dioxide is 20-30nm;
wherein the polishing pad is SUBA600;
polishing equipment includes abrasive disc (1) be provided with blast pipe (3) coaxially directly over abrasive disc (1) be provided with strutting arrangement (4) that are used for supporting semiconductor wafer (6) on the global of blast pipe (3), strutting arrangement (4) are including a plurality of horizontal poles (41) of rigid coupling on blast pipe (3) are global, and are a plurality of the central axis of horizontal pole (41) is on a parallel with abrasive disc (1) surface, and is a plurality of the one end that blast pipe (3) were kept away from in horizontal pole (41) is provided with montant (42) respectively, and is a plurality of the central axis perpendicular to abrasive disc (1) surface of montant (42) is a plurality of the lower extreme of montant (42) is provided with bonding seat (43) respectively, and it has semiconductor wafer (6) to bond to keep away from montant (42) one side in bonding seat (43) be provided with water pipe (51), polishing rough polishing liquid pipe (52) and finish polishing liquid pipe (53) in blast pipe (3).
2. The polishing method of a semiconductor wafer as set forth in claim 1, wherein central axes of the water pipe (51), the rough polishing liquid pipe (52) and the fine polishing liquid pipe (53) are arranged in a regular triangle.
3. The polishing method for a semiconductor wafer as set forth in claim 1, wherein the air speed in the air feed pipe (3) is 0.3 to 5.4m/s, and the distance between the lower end of the air feed pipe (3) and the upper surface of the abrasive disk (1) is 10 to 25mm.
4. A polishing method of a semiconductor wafer according to claim 1, characterized in that a bell mouth (32) is provided at a lower end of said blast pipe (3), and an opening direction of said bell mouth (32) is directed toward said polishing platen (1).
5. The polishing method for a semiconductor wafer as recited in claim 1, wherein a polishing pressure in the polishing is 0.3 to 0.6kg/cm 2 The rotating speed of the grinding disc (1) is 20-40r/min, and the flow rate of the polishing solution is 0.4-0.5L/min.
6. An indium phosphide wafer, characterized in that the indium phosphide wafer is produced by polishing with the polishing method for a semiconductor wafer as recited in any one of claims 1 to 5.
7. The InP wafer of claim 6, wherein the InP wafer has a roughness Ra of 0.2nm or less, a flatness of 5 μm or less, a bow of 4 μm or less, and a warp of 2 μm or less.
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