CN114290156B - Thickness measuring method, thickness measuring system and thickness measuring device in silicon wafer polishing process - Google Patents
Thickness measuring method, thickness measuring system and thickness measuring device in silicon wafer polishing process Download PDFInfo
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Abstract
The application relates to the technical field of semiconductor polishing, in particular to a thickness measuring method, a thickness measuring system and a thickness measuring device in a silicon wafer polishing process, wherein the thickness measuring method comprises the following steps: establishing a functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process; and determining the thickness of the silicon wafer based on the collected torque, rotation speed, polishing time and the functional relation model of the motor. According to the invention, the torque, the rotating speed and the polishing time of the motor in the silicon wafer polishing process are established as well as the functional relation model of the silicon wafer thickness, and the silicon wafer thickness is determined based on the collected torque, rotating speed, polishing time and the functional relation model of the motor, so that the on-line detection in the silicon wafer polishing process can be realized, and the accuracy is higher.
Description
Technical Field
The application relates to the technical field of semiconductor polishing, in particular to a thickness measuring method, a thickness measuring system and a thickness measuring device in a silicon wafer polishing process.
Background
The semiconductor industry is a leading and supporting industry for national economy modernization and informatization construction, and the main material basis of the semiconductor industry is semiconductor materials. Silicon materials are important semiconductor functional materials and are used in amounts of about 95% or more of the total semiconductor material.
Polishing is a key ring in the silicon wafer processing technology, thickness data needs to be fed back in real time to judge the processing progress during polishing, and high requirements are placed on thickness detection accuracy. The thickness measurement is carried out by laser, such as optical coherence tomography, and the thickness value is obtained by respectively interfering the laser reflected by the upper surface of the silicon wafer and the lower surface of the silicon wafer with the laser reflected by the reference arm, but for some silicon wafers, the laser reflected by the lower surface of the silicon wafer is extremely weak, so that the accuracy of the finally obtained thickness value is lower.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a method, a system, a control method, a system and a device for polishing and thickness measurement of a silicon wafer.
In a first aspect, an embodiment of the present invention provides a thickness measuring method in a silicon wafer polishing process, which is used for a polishing device, where the polishing device includes at least one motor, an output end of the motor is connected with a polishing disk, and the motor controls the polishing disk to polish a silicon wafer, and the method includes:
establishing a functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process;
and determining the thickness of the silicon wafer based on the collected torque, rotation speed, polishing time and the functional relation model of the motor.
In one embodiment, the establishing a functional relation model of the torque, the rotating speed and the polishing time of the motor in the silicon wafer polishing process and the thickness of the silicon wafer comprises the following steps:
determining work performed by the motor based on the torque, rotational speed, and polishing time of the motor;
determining a proportionality coefficient of the silicon wafer removal thickness and the work done by the motor based on the work done by the motor and the corresponding silicon wafer removal thickness;
and establishing the functional relation model based on the torque, the rotating speed, the polishing time, the proportionality coefficient and the thickness of the silicon wafer of the motor in the silicon wafer polishing process.
In an embodiment, the polishing device comprises a first motor, wherein the output end of the first motor is connected with a first polishing disk, and the first motor controls the first polishing disk to polish the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotation speed of the first motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of samplings.
In an embodiment, the polishing device comprises a first motor and a second motor which is different from the first motor in steering direction, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish the first surface of the silicon wafer, and the output end of the second motor is connected with the second surface of the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, ui for the torque of the first motor, ω ui For the rotational speed of the first motor, τ pi For the torque of the second motor, ω pi For the rotation speed of the second motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
In an embodiment, the polishing device comprises a first motor and a third motor which is different from the first motor in steering direction, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish a first surface of a silicon wafer, the output end of the third motor is connected with a second polishing disk, the third motor controls the second polishing disk to polish a second surface of the silicon wafer, and a functional relation model of torque, rotating speed and polishing time of the motor and thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotational speed of the first motor, τ di For torque, ω of the third motor di For the rotation speed of the third motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
In a second aspect, an embodiment of the present invention provides a thickness measuring system in a silicon wafer polishing process, which is used for a polishing device, where the polishing device includes at least one motor, an output end of the motor is connected with a polishing disk, the motor controls the polishing disk to polish a silicon wafer, and the system includes:
the model building module is used for building a functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process;
and the thickness determining module is used for determining the thickness of the silicon wafer based on the acquired torque, rotating speed, polishing time and the functional relation model of the motor.
In one embodiment, the model building module comprises:
a first determination module for determining work performed by the motor based on torque, rotational speed, and polishing time of the motor;
the second determining module is used for determining the proportionality coefficient of the silicon wafer removal thickness and the work done by the motor based on the work done by the motor and the corresponding silicon wafer removal thickness;
and the model building sub-module is used for building the functional relation model based on the torque, the rotating speed, the polishing time, the proportionality coefficient and the silicon wafer thickness of the motor in the silicon wafer polishing process.
In an embodiment, the polishing device comprises a first motor, wherein the output end of the first motor is connected with a first polishing disk, and the first motor controls the first polishing disk to polish the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotation speed of the first motor, deltat is the sampling interval time, and k is the proportional systemThe number n is the number of samples.
In an embodiment, the polishing device comprises a first motor and a second motor which is different from the first motor in steering direction, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish the first surface of the silicon wafer, and the output end of the second motor is connected with the second surface of the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, ui for the torque of the first motor, ω ui For the rotational speed of the first motor, τ pi For the torque of the second motor, ω pi For the rotation speed of the second motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
In an embodiment, the polishing device comprises a first motor and a third motor which is different from the first motor in steering direction, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish a first surface of a silicon wafer, the output end of the third motor is connected with a second polishing disk, the third motor controls the second polishing disk to polish a second surface of the silicon wafer, and a functional relation model of torque, rotating speed and polishing time of the motor and thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotational speed of the first motor, τ di For torque, ω of the third motor di For the rotation speed of the third motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
In a third aspect, an embodiment of the present invention provides a silicon wafer polishing device, including at least one motor, an output end of the motor is connected with a polishing disk, the motor controls the polishing disk to polish a silicon wafer, and further includes a thickness measuring system as described in the second aspect, where the thickness measuring system is connected with the motor, and is used to measure a thickness of the silicon wafer, and control the operation of the motor according to the thickness of the silicon wafer.
According to the method, the system and the device, the torque, the rotating speed and the polishing time of the motor in the silicon wafer polishing process are established as well as the function relation model of the silicon wafer thickness, and the silicon wafer thickness is determined based on the collected torque, rotating speed, polishing time and function relation model of the motor, so that the on-line detection in the silicon wafer polishing process can be realized, and the accuracy is higher.
Drawings
FIG. 1 is a flow chart of a method of thickness measurement in one embodiment;
FIG. 2 is a flow diagram of a model creation method in one embodiment;
FIG. 3 is a schematic view showing the structure of a polishing apparatus in one embodiment;
FIG. 4 is a schematic view showing the structure of a polishing apparatus according to another embodiment;
FIG. 5 is a schematic view showing the structure of a polishing apparatus according to still another embodiment;
FIG. 6 shows wafer thickness and wafer thickness in an exemplary embodiment
Is a schematic diagram of the functional relationship of (a);
FIG. 7 is a graph showing silicon wafer thickness values in an exemplary embodiment;
FIG. 8 is a schematic diagram of a thickness measurement system in an example embodiment.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
In an embodiment, as shown in fig. 1, a thickness measuring method in a silicon wafer polishing process is provided, and the thickness measuring method is used for a polishing device, wherein the polishing device comprises at least one motor, the output end of the motor is connected with a polishing disk, the motor controls the polishing disk to polish a silicon wafer, and the method comprises the following steps:
s102: establishing a functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process;
s104: and determining the thickness of the silicon wafer based on the collected torque, rotation speed, polishing time and the functional relation model of the motor.
The output end of the motor is connected with a polishing disk, and the silicon wafer is polished by the polishing disk. It is understood that the torque, rotational speed and polishing time of the motor have a certain functional relationship with the thickness of the silicon wafer. Separately, the greater the torque of the motor, the faster the polishing speed to the silicon wafer, and therefore the faster the silicon wafer thickness variation. The higher the rotation speed of the motor, the faster the polishing speed of the silicon wafer, and therefore the faster the thickness of the silicon wafer changes. The longer the polishing time, the greater the variation in silicon wafer thickness. Based on the above three considerations, in this embodiment, a functional relation model of the torque, the rotation speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process is established, and then the collected torque, rotation speed and polishing time of the motor are led into the functional relation model, so that the thickness of the silicon wafer can be determined. The method can realize on-line detection in the silicon wafer polishing process and has higher accuracy. In addition, the method has low cost because no additional sensor is needed.
In one embodiment, as shown in fig. 2, the method for establishing a functional relation model of the torque, the rotation speed and the polishing time of the motor in the silicon wafer polishing process and the thickness of the silicon wafer comprises the following steps:
s202: determining work performed by the motor based on the torque, rotational speed, and polishing time of the motor;
s204: determining a proportionality coefficient of the silicon wafer removal thickness and the work done by the motor based on the work done by the motor and the corresponding silicon wafer removal thickness;
s206: and establishing the functional relation model based on the torque, the rotating speed, the polishing time, the proportionality coefficient and the thickness of the silicon wafer of the motor in the silicon wafer polishing process.
It will be appreciated that the work performed by the motor can be obtained using the torque, rotational speed and polishing time of the motor, the more work the more the thickness of the wafer is reduced. Therefore, based on the work done by the motor and the corresponding silicon wafer removal thickness, the proportionality coefficient of the silicon wafer removal thickness and the work done by the motor can be determined.
Typically, the thickness of the silicon wafer is uniform, so that the ratio of the thickness of the silicon wafer removed to the work done by the motor is constant, i.e., the two are in a linear relationship.
In some special cases, the surface of the silicon wafer is not flat, and the proportionality coefficient of the thickness of the silicon wafer removed and the work done by the motor is not constant. Before the functional relation model is built, a test silicon wafer can be obtained from the same batch of silicon wafers for polishing, a change curve of the removal thickness of the test silicon wafer and the proportional coefficient of work done by the motor is obtained offline, and the functional relation model is built based on the torque, the rotating speed, the polishing time, the proportional coefficient and the silicon wafer thickness of the motor in the silicon wafer polishing process. Because the shapes of the silicon wafers in the same batch are consistent, the functional relation model can be used for thickness measurement of the silicon wafers in the same batch in the polishing process.
It should be noted that the thickness measuring method is suitable for thickness measurement in the single-sided polishing process of the silicon wafer, and is also suitable for thickness measurement in the double-sided polishing process of the silicon wafer.
It should be noted that the thickness measuring method is suitable for thickness measurement in the polishing process of all types of silicon wafers, including heavily doped silicon wafers and lightly doped silicon wafers.
In one embodiment, as shown in fig. 3, the polishing apparatus 300 includes a first motor 301, an output end of the first motor 301 is connected to a first polishing disk 303 through a lower spindle 302, and a first polishing pad 304 is attached to a surface of the first polishing disk 303 to polish a silicon wafer on one side. The other side of the silicon wafer is fixedly connected to a ceramic disc 305, and the ceramic disc 305 is fixed through an upper spindle 306.
In this embodiment, the silicon wafer is fixedly connected to the ceramic disc 305, the first motor 301 drives the lower spindle 302 to rotate, and then one surface of the silicon wafer is polished by the first polishing pad 304 on the first polishing disc 303, after one surface polishing is completed, the silicon wafer is turned over and fixed on the ceramic disc 305, and then the other surface of the silicon wafer is polished, and each polishing only polishes one surface of the silicon wafer.
One or more silicon wafers can be fixedly connected to the ceramic disc, and when the silicon wafers are fixedly connected, single-sided polishing of the silicon wafers can be realized. When a silicon wafer is fixedly attached, the preferred position of the silicon wafer is concentric with the first polishing pad.
In another embodiment, the polishing apparatus may include a plurality of ceramic disks, each of which has a silicon wafer fixedly attached thereto, and the plurality of silicon wafers are polished simultaneously by the first polishing pad.
It should be noted that, the polishing device may also adopt a manner of fixing the lower spindle and rotating the upper spindle to polish the upper surface of the silicon wafer, and the structure is similar to that of the above embodiment, so that the description is omitted.
In this embodiment, the surface of the silicon wafer is flat. At this time, the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui Omega is the torque of the motor ui For the rotation speed of the motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the sampling frequency.
Wherein the proportionality coefficient k is calculated by polishing the change curve of the thickness value with time
A linear fit of the curve over time.
Specifically, the silicon wafer of the same batch is firstly used for performing two test throws, and the calculation is carried out to obtain
And obtaining the thickness removal amount of the silicon wafer, and then performing linear fitting to obtain the k value.
The rotational speed of the first motor is first multiplied by the torque using the multiplication command MUL and then accumulated after a sampling time interval Δt. Multiplying the accumulated values by a multiplication command MUL (-k), and adding the original thickness h of the silicon wafer 0 And outputting the thickness h of the silicon wafer.
In one embodiment, as shown in fig. 4, the polishing apparatus 300 includes a first motor 301, an output end of the first motor 301 is connected to a first polishing disk 303 through a lower spindle 302, and a first polishing pad 304 is attached to a surface of the first polishing disk 303 to polish a silicon wafer on one side. The other side of the silicon wafer is fixedly connected to a ceramic disc 305, the ceramic disc 305 is connected to an upper spindle 306, and the upper spindle 306 is driven by a second motor 307 to rotate in a direction different from that of the first motor 301.
In the embodiment, only one surface of the silicon wafer is polished every time, and the difference is that a second motor for driving the ceramic disc to rotate is added, the second motor and the first motor are different in steering, and the polishing efficiency of the silicon wafer is improved.
One or more silicon wafers can be fixedly connected to the ceramic disc, and when the silicon wafers are fixedly connected, single-sided polishing of the silicon wafers can be realized. When a silicon wafer is fixedly connected, the preferred position of the silicon wafer is concentric with the ceramic disk.
In another embodiment, the polishing device may include a plurality of ceramic discs, each of which is connected to a corresponding one of the first motor output terminals, and each of which is fixedly connected with a silicon wafer, and the plurality of silicon wafers are polished simultaneously by the first polishing pad. It should be noted that, the polishing device may also adopt an upper spindle to connect with a polishing disk to polish the upper surface of the silicon wafer, and a lower spindle to connect with a ceramic disk to rotate in different directions, and the structure is similar to that of the above embodiment, so that the description is omitted.
In this embodiment, the surface of the silicon wafer is flat. At this time, the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, ui for the torque of the first motor, ω ui For the rotational speed of the first motor, τ pi For the torque of the second motor, ω pi For the rotation speed of the second motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
Wherein the proportionality coefficient k is calculated by polishing the change curve of the thickness value with time
A linear fit of the curve over time.
The rotational speeds of the first motor and the second motor are multiplied by the torque using the multiplication command MUL, and then added by the addition command ADD, multiplied by the sampling time interval Δt, and then added. Multiplying the accumulated value by the multiplication command MUL (-k), and adding the original thickness h of the silicon wafer 0 And outputting the thickness h of the silicon wafer.
In the case of a plurality of first ceramic disks, each of the first ceramic disks and the first polishing disk may be regarded as an independent unit, and the thickness of the silicon wafer on the first ceramic disk may be independently calculated by acquiring the torque, the rotational speed, and the polishing time of the second motor to which each of the first ceramic disks is connected.
In one embodiment, as shown in fig. 5, the polishing apparatus 300 includes a first motor 301, an output end of the first motor 301 is connected to a first polishing disk 303 through a lower spindle 302, and a first polishing pad 304 is attached to a surface of the first polishing disk 303 to polish a lower surface of a silicon wafer. The polishing device 300 further comprises a third motor 308, wherein the output end of the third motor 308 is connected with a second polishing disk 309 through an upper spindle 306, and a second polishing pad 310 is attached to the surface of the first polishing disk 309 to polish the upper surface of the silicon wafer. Wherein the rotation directions of the first motor 301 and the third motor 308 are opposite.
In this embodiment, the silicon wafer is fixed between the first polishing disk 303 and the second polishing disk 309, the lower surface of the silicon wafer is polished by the first motor 301 using the first polishing disk 303, and the upper surface of the silicon wafer is polished by the third motor 308 using the second polishing disk 309, so that the two surfaces of the silicon wafer are polished simultaneously in one polishing.
In this embodiment, the surface of the silicon wafer is flat. At this time, the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotational speed of the first motor, τ di For torque, ω of the third motor di For the rotation speed of the third motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
The straight line shown in FIG. 6 represents the thickness of the silicon wafer
And predicting the thickness of the polished silicon wafer according to the straight line. In an exemplary embodiment, the thickness values of the silicon wafer obtained by processing the silicon wafer with 4 times of different target thickness values are points in fig. 7, so that the thickness value obtained by the thickness measuring method is very close to the actual thickness value, and the thickness measuring error can be within 0.5 μm, so that the accuracy of the thickness measuring method is higher.
In one embodiment, the thickness measuring method further comprises: when the thickness of the silicon wafer reaches a set threshold value, the motor is controlled to stop working.
The thickness of the silicon wafer is measured in real time in the polishing process, when the thickness of the silicon wafer reaches a set threshold value, the motor is controlled to stop working, and compared with the mode of measuring the thickness offline each time, the polishing efficiency is improved.
In one embodiment, as shown in fig. 8, a thickness measuring system 400 in a silicon wafer polishing process is provided, and is used for a polishing device, the polishing device comprises at least one motor, an output end of the motor is connected with a polishing disk, the motor controls the polishing disk to polish a silicon wafer, and the system comprises:
the model building module 401 is used for building a functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process;
the thickness determining module 402 is configured to determine the thickness of the silicon wafer based on the collected torque, rotation speed, polishing time and the functional relation model of the motor.
In one embodiment, the model building module comprises:
a first determination module for determining work performed by the motor based on torque, rotational speed, and polishing time of the motor;
the second determining module is used for determining the proportionality coefficient of the silicon wafer removal thickness and the work done by the motor based on the work done by the motor and the corresponding silicon wafer removal thickness;
and the model building sub-module is used for building the functional relation model based on the torque, the rotating speed, the polishing time, the proportionality coefficient and the silicon wafer thickness of the motor in the silicon wafer polishing process.
In one embodiment, the polishing device comprises a first motor for controlling output to polish a single surface of a silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotation speed of the first motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of samplings.
In one embodiment, the polishing device comprises a first motor for controlling output to polish a single surface of a silicon wafer, and a second motor for controlling the silicon wafer to rotate in a direction different from the first motor; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, ui for the torque of the first motor, ω ui For the rotational speed of the first motor, τ pi For the torque of the second motor, ω pi For the rotation speed of the second motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
In an embodiment, the polishing device comprises a first motor for controlling output to polish a first surface of the silicon wafer, and a third motor for controlling output to polish a second surface of the silicon wafer, wherein a functional relation model of torque, rotating speed and polishing time of the motors and thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotational speed of the first motor, τ di For torque, ω of the third motor di For the rotation speed of the third motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
In an embodiment, the system further comprises:
and the control module is used for controlling the motor to stop working when the thickness of the silicon wafer reaches a set threshold value.
For specific limitations of the thickness measurement system, reference may be made to the above limitations of the thickness measurement method, and no further description is given here. The various modules in the above-described thickness measurement system may be implemented in whole or in part by software, hardware, and combinations thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In an embodiment, a silicon wafer polishing device is provided, which comprises at least one motor for controlling output to polish a silicon wafer and the thickness measuring system, wherein the thickness measuring system is connected with the motor and is used for measuring the thickness of the silicon wafer and controlling the operation of the motor according to the thickness of the silicon wafer.
Specific limitations regarding the silicon wafer polishing apparatus can be found in the above description, and will not be repeated here.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (9)
1. The thickness measuring method in the silicon wafer polishing process is used for a polishing device, the polishing device comprises at least one motor, the output end of the motor is connected with a polishing disk, and the motor controls the polishing disk to polish a silicon wafer, and is characterized in that the method comprises the following steps:
establishing a functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process;
determining the thickness of the silicon wafer based on the collected torque, rotation speed, polishing time and the functional relation model of the motor;
the method for establishing the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process comprises the following steps:
determining work performed by the motor based on the torque, rotational speed, and polishing time of the motor;
determining a proportionality coefficient of the silicon wafer removal thickness and the work done by the motor based on the work done by the motor and the corresponding silicon wafer removal thickness;
and establishing the functional relation model based on the torque, the rotating speed, the polishing time, the proportionality coefficient and the thickness of the silicon wafer of the motor in the silicon wafer polishing process.
2. The method according to claim 1, wherein the polishing device comprises a first motor, wherein the output end of the first motor is connected with a first polishing disk, and the first motor controls the first polishing disk to polish the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotation speed of the first motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of samplings.
3. The method according to claim 1, wherein the polishing device comprises a first motor and a second motor which is different from the first motor in steering direction, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish the first surface of the silicon wafer, and the output end of the second motor is connected with the second surface of the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, ui for the torque of the first motor, ω ui For the rotational speed of the first motor, τ pi For the torque of the second motor, ω pi For the rotation speed of the second motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
4. The method of claim 1, wherein the polishing device comprises a first motor and a third motor which turns differently from the first motor, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish a first surface of a silicon wafer, the output end of the third motor is connected with a second polishing disk, the third motor controls the second polishing disk to polish a second surface of the silicon wafer, and a functional relation model of torque, rotation speed and polishing time of the motor and thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotational speed of the first motor, τ di For torque, ω of the third motor di For the rotation speed of the third motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
5. Thickness measuring system in silicon chip polishing process for burnishing device, burnishing device includes at least one motor, the output of motor is connected with the polishing dish, the motor control the polishing dish polishes the silicon chip, its characterized in that, the system includes:
the model building module is used for building a functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer in the silicon wafer polishing process;
the thickness determining module is used for determining the thickness of the silicon wafer based on the collected torque, rotation speed, polishing time and the functional relation model of the motor;
wherein, the model establishment module includes:
a first determination module for determining work performed by the motor based on torque, rotational speed, and polishing time of the motor;
the second determining module is used for determining the proportionality coefficient of the silicon wafer removal thickness and the work done by the motor based on the work done by the motor and the corresponding silicon wafer removal thickness;
and the model building sub-module is used for building the functional relation model based on the torque, the rotating speed, the polishing time, the proportionality coefficient and the silicon wafer thickness of the motor in the silicon wafer polishing process.
6. The system of claim 5, wherein the polishing device comprises a first motor, wherein the output end of the first motor is connected with a first polishing disk, and the first motor controls the first polishing disk to polish the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotation speed of the first motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of samplings.
7. The system of claim 5, wherein the polishing device comprises a first motor and a second motor which is different from the first motor in steering direction, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish the first surface of the silicon wafer, and the output end of the second motor is connected with the second surface of the silicon wafer; the functional relation model of the torque, the rotating speed and the polishing time of the motor and the thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, ui for the torque of the first motor, ω ui For the rotational speed of the first motor, τ pi For the torque of the second motor, ω pi For the rotation speed of the second motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
8. The system of claim 5, wherein the polishing device comprises a first motor and a third motor which is turned differently from the first motor, wherein the output end of the first motor is connected with a first polishing disk, the first motor controls the first polishing disk to polish a first surface of the silicon wafer, the output end of the third motor is connected with a second polishing disk, the third motor controls the second polishing disk to polish a second surface of the silicon wafer, and a functional relation model of torque, rotation speed and polishing time of the motor and thickness of the silicon wafer is as follows:
thickness of silicon wafer
Wherein h is 0 Is the original thickness of the silicon wafer, τ ui For the torque of the first motor, ω ui For the rotational speed of the first motor, τ di For torque, ω of the third motor di For the rotation speed of the third motor, Δt is the sampling interval time, k is the proportionality coefficient, and n is the number of times of sampling.
9. The utility model provides a silicon chip burnishing device which characterized in that: the thickness measuring device comprises at least one motor, wherein the output end of the motor is connected with a polishing disk, the motor controls the polishing disk to polish a silicon wafer, and the thickness measuring device further comprises a thickness measuring system according to any one of claims 5-8, wherein the thickness measuring system is connected with the motor and is used for measuring the thickness of the silicon wafer and controlling the operation of the motor according to the thickness of the silicon wafer.
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| JP2005026453A (en) * | 2003-07-02 | 2005-01-27 | Ebara Corp | Substrate polishing apparatus and method therefor |
| JP2007319994A (en) * | 2006-06-01 | 2007-12-13 | Disco Abrasive Syst Ltd | Polishing pad |
| WO2010053804A2 (en) * | 2008-11-07 | 2010-05-14 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
| CN201490163U (en) * | 2009-05-27 | 2010-05-26 | 中国电子科技集团公司第四十八研究所 | An online endpoint detection system for a chemical mechanical polishing device |
| CN102328272B (en) * | 2011-09-23 | 2014-02-19 | 清华大学 | chemical mechanical polishing |
| US8968052B2 (en) * | 2011-10-21 | 2015-03-03 | Strasbaugh | Systems and methods of wafer grinding |
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