CN114288808B - Method for improving desorption performance of purple phosphazene-based gas sensor - Google Patents
Method for improving desorption performance of purple phosphazene-based gas sensor Download PDFInfo
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Abstract
The invention discloses a method for improving desorption performance of a purple phosphazene-based gas sensor, and belongs to the technical field of gas sensors. Firstly, compounding a graphene film and a purple phosphazene to prepare a heterojunction to assemble a purple phosphazene gas sensor, and placing the gas sensor on a gas-sensitive test platform; secondly, the surface of the ultraviolet phosphazene gas sensor is irradiated by a high-power high-intensity infrared baking lamp for pretreatment, so that more active sites can be exposed; and then the ultraviolet phosphazene gas sensor is irradiated by light sources with different intensities and different wave bands to carry out photoinduced desorption treatment, so that the desorption time can be greatly shortened. Meanwhile, compared with methods such as thermal desorption, electron excitation desorption, ion collision desorption and field desorption, the method has the advantages of low cost, simplicity in operation, high safety, low requirement on equipment and the like. The photoinduced desorption process of the invention is safe and can be completed in the environment of normal temperature and normal pressure.
Description
Technical Field
The invention belongs to the technical field of gas sensors, and particularly relates to a method for improving desorption performance of a purple phosphazene-based gas sensor.
Background
Purple phosphorus is also called schiff phosphorus, is a layered simple substance phosphorus structure and has unique electronic and photoelectric properties. The process of synthesis, characterization and exfoliation of millimeter-sized purple phosphorus single crystals was first reported by the university of western traffic Zhang Jinying subject group in 2019. The research shows that the hole mobility of the purple phosphorus is limited to 3000-7000cm 2 V -1 s -1 And the decomposition temperature of the purple phosphorus is 52 ℃ higher than that of the black phosphorus, and the purple phosphorus is the most stable phosphorus allotrope known at present. Meanwhile, violet phosphorus is an indirect bandgap semiconductor with a bandgap of about 1.42-2.54eV. The graphene and black phosphorus of the low-dimensional electronic material have excellent performance, high stability and low preparation cost, and are very likely to bring breakthrough progress to the research in the field of electronic information sensing.
The purple phosphorus with the layered structure is subjected to stripping treatment to obtain the purple phosphorus alkene. The purple phosphazene is used as a two-dimensional material of the initial exposure angle, has a plurality of active sites and strong adsorption capacity, and is a potential gas-sensitive material. However, the purple-phosphazene-based gas sensor has the problems that active sites are easy to occupy, and are easy to adsorb and difficult to desorb.
The desorption mode of the gas sensor is various: (1) Thermal desorption ensures that the temperature of the system is high enough to cause most of the adsorbed particles to leave the surface due to the higher energy than the desorption energy. (2) Electron-stimulated desorption, also known as electron impact desorption or electron-induced desorption, the electron impact may cause the adsorbed particles to transition to the excited or ionic state of the adsorbate to desorb. (3) Ion impact desorption, ion or fast neutral particle impact can also move the adsorbed particles away through different pathways. (4) The field desorption, the strong electric field can make the adsorbed particles tunnel effect from the ground state to the ion state, so that the adsorbate particles immediately leave from the surface.
However, the thermal desorption method mostly needs to perform desorption treatment for a long time under the argon condition of 200-500 ℃, and has the disadvantage of long desorption time. And for some multifunctional sensors, the thermal stimulus adopted by the thermal desorption treatment can also generate a sensing signal, so that desorption treatment signals are easily confused. In addition, the electron excitation desorption method, the ion collision desorption method and the field desorption method all need to be processed in professional equipment. The common treatment condition is that desorption treatment is carried out after voltage or special electric field is applied in a vacuum environment, the method has high treatment cost and high equipment requirement, and the thin film type sensing device is damaged to a certain extent by utilizing electron or ion collision desorption, so that the method has unrepeatability.
At present, the existing desorption method for the gas sensor has the problems of long desorption time and high-temperature pressurization of desorption environment, so that the requirement on equipment is high. In order to promote the development of the purple phosphazene in the sensing field, the development of a method for rapidly and efficiently improving the desorption performance of the purple phosphazene gas sensor by combining the sensing characteristics of the purple phosphazene is very important.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a method for improving the desorption performance of a purple phosphazene-based gas sensor, and aims to solve the problems of long desorption time and high-temperature pressurization of a desorption environment in the existing method for realizing desorption of the gas sensor, so that the development of purple phosphazene in the sensing field is better promoted.
In order to achieve the above purpose, the invention is realized by adopting the following technical scheme:
the invention discloses a method for improving desorption performance of a purple phosphazene-based gas sensor, which comprises the following steps:
step 1), compounding a graphene film and the purple phosphazene to prepare a heterojunction, assembling the heterojunction into a purple phosphazene gas sensor, and placing the gas sensor on a gas-sensitive test platform;
step 2), introducing Ar gas, and preprocessing the ultraviolet-phosphorus-based gas sensor by adopting an infrared baking lamp;
step 3), introducing test gas, and starting the ultraviolet-phosphorus-based gas sensor to adsorb the gas;
and 4) introducing Ar gas, and adopting an external light source to carry out photoinduced desorption treatment on the ultraviolet phosphazene gas sensor.
Preferably, in step 1), the graphene film is prepared by a chemical vapor deposition method, and 0-5 layers of graphene film are grown on the copper foil substrate by taking methane as a carbon source.
Preferably, in the step 1), the purple phosphazene is prepared by adopting a physical method, the block purple phosphazene is dispersed in glycol, and after ultrasonic crushing is carried out for 0-10h, the purple phosphazene is obtained by bombarding the purple phosphazene dispersion liquid by using continuous laser.
Preferably, in the step 1), the graphene film and the purple phosphazene are compounded into a heterojunction by a vacuum suction filtration method.
Preferably, in the step 2) and the step 4), the Ar gas concentration is 0-800ppm, and the ventilation time is 0-1h.
Preferably, in the step 2), the wavelength of the infrared baking lamp is 0.75-5 μm, the power is 100-500W, and the illumination time is 0-40min.
Preferably, in step 3), the test gas is NO, NO 2 、CO、H 2 S、C 2 H 5 OH or CHOH.
Preferably, in step 3), the test gas concentration is 0-1000ppm and the aeration time is 0-1h.
Preferably, in step 4), the external light source is a xenon light source, an ultraviolet light source, a strong light source or an infrared light source.
Preferably, in the step 4), the wavelength of the light source used for the photoinduced desorption treatment is 200-1100nm, the power is 5-400W, and the illumination time is 0-1h.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a method for improving desorption performance of a purple phosphazene gas sensor, which is to improve the desorption performance of the purple phosphazene gas sensor through photoinduced desorption treatment. Compared with thermal desorption, electron excitation desorption, ion collision desorption and field desorption methods, the method has the advantages of low cost, simplicity in operation, high safety and low requirements on equipment; the desorption process of the invention is safe and can be completed in a desorption environment at normal temperature and normal pressure.
Furthermore, in the pretreatment stage, the high-power high-intensity infrared baking lamp is adopted to irradiate the surface of the ultraviolet-phosphorus-based gas sensor, so that impurities on the surface of the material can be effectively removed to expose more active sites, and the active sites of the ultraviolet-phosphorus-based gas sensor are not easy to occupy.
Furthermore, in the desorption stage, the ultraviolet-phosphorus-based gas sensor is irradiated by adopting light sources with different intensities and different wave bands, so that the desorption time can be greatly shortened, and the desorption performance of the ultraviolet-phosphorus-based gas sensor is improved.
Drawings
FIG. 1 is a schematic diagram of a purple-phospholine-based gas sensor of the present invention;
FIG. 2 is a schematic diagram of a gas-sensitive test platform of the purple-phospholene-based gas-sensitive sensor of the present invention;
FIG. 3 is a schematic diagram showing desorption of the purple phosphazene based gas sensor of the embodiment 1 under Ar atmosphere and no light;
FIG. 4 is a schematic diagram showing desorption of the purple phosphazene based gas sensor of the embodiment 1 under Ar atmosphere and illumination;
FIG. 5 is a schematic diagram showing desorption resistance change of the purple phosphazene gas sensor under illumination of xenon lamps with different powers and wavelengths of 200-1100 nm; wherein, (a) is power 190W, (b) is power 250W, and (c) is power 310W;
FIG. 6 is a graph showing the resistance change of the UV-based gas sensor according to example 1 of the present invention, which uses the illumination desorption method, for continuously measuring NO.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In order to improve the desorption performance of the ultraviolet-phosphorus-based gas sensor, the invention provides a method for improving the desorption performance of the ultraviolet-phosphorus-based gas sensor, namely, the ultraviolet-phosphorus-based gas sensor is irradiated by adopting light sources with different intensities and different wave bands in the desorption stage.
The graphene film used in the embodiment of the invention is prepared by adopting a chemical vapor deposition method (CVD method): and (3) taking methane as a carbon source, putting the copper foil substrate into a tube furnace, introducing methane gas into the tube furnace, keeping the methane flow at the temperature of 1060 ℃ for 0-40min, and transferring the etched graphene film to a PES (polyether sulfone) filter membrane, wherein 0-5 layers of graphene films are grown on the copper foil substrate.
The purple phosphazene used in the embodiment of the invention is prepared by adopting a physical method: dispersing the grinded block purple phosphorus in an ethylene glycol solvent, carrying out ultrasonic crushing for 0-10h to ensure that the dispersion liquid is uniform, and bombarding the purple phosphorus dispersion liquid by using continuous laser to achieve the purpose of further crushing, thereby preparing the purple phosphorus alkene. The laser parameters used were: the power is 60W, the scanning speed is 20mm/s, and the scanning time is 1h.
The invention provides a method for improving desorption performance of a purple phosphazene-based gas sensor, which comprises the following steps:
step 1, compounding a graphene film and a purple phosphazene into a heterojunction by utilizing a vacuum suction filtration method to assemble a purple phosphazene-based gas sensor, and placing the gas sensor on a gas-sensitive test platform;
step 2, introducing Ar with a certain concentration, and preprocessing a sensor by adopting an infrared baking lamp;
step 3, introducing a gas with a specific concentration for a period of time, and starting the ultraviolet-phosphorus-based gas sensor to adsorb the gas;
and 4, introducing Ar with a certain concentration, and carrying out photoinduced desorption treatment on the ultraviolet phosphazene gas sensor by an external light source.
In the step 2 and the step 4, ar concentration is 0-800ppm, and ventilation time is 0-1h.
In the step 2, the wavelength of the infrared baking lamp is 0.75-5 μm, the power is 0-500W, and the illumination time is 0-40min.
In step 3, the selected gas is NO 2 、CO、H 2 S、C 2 H 5 OH and CHOH with concentration of 0-1000ppm and ventilation time of 0-1h.
In the step 4, the wavelength of a light source used for the photoinduced desorption treatment is 200-1100nm, the power is 0-400W, and the illumination time is 0-1h.
The assembled purple phosphazene-based gas sensor is shown in FIG. 1; please refer to fig. 2 for a gas-sensitive test platform of the purple-phospholene-based gas-sensitive sensor.
Example 1
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 500W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet-phosphorus alkenyl sensor is irradiated by a xenon lamp with the power of 190W and the wavelength range of 200-1100nm to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 500W for 10min.
(2) Adsorption stage
Placing the ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp in a high-low temperature vacuum probe test platform, and introducing NO gas with the concentration of 200ppm for 30min, wherein the resistance of the sensor is obviously changed.
(3) Desorption stage
NO was turned off and 300ppm argon was continuously fed. Meanwhile, the surface of the ultraviolet-phosphazene-based gas sensor is irradiated by a xenon lamp with the power of 190W and the wavelength range of 200-1100nm for 2 min. Real-time resistance detection shows that the sensor resistance can return to the vicinity of the original resistance value after illumination for 20-30 seconds.
Referring to fig. 3, a schematic diagram of desorption of the purple phosphazene gas sensor of the embodiment 1 of the present invention under Ar atmosphere and no illumination is shown, from which it can be known that the purple phosphazene gas sensor is not substantially desorbed under argon condition without illumination.
Referring to fig. 4, a schematic diagram of desorption of the porphyrinene-based gas sensor in Ar atmosphere and under light according to embodiment 1 of the present invention is shown, from which it can be known that the porphyrinene-based gas sensor can be quickly desorbed to the vicinity of the original resistance by applying light under argon atmosphere.
Referring to fig. 6, a graph of the resistance change of the continuously measured NO of the porphyrinthine gas sensor using the light desorption method according to example 1 of the present invention shows that the light desorption treatment is a desorption method that does not affect the cycle test performance of the porphyrinthine gas sensor.
Example 2
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 100W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet-phosphorus alkenyl sensor is irradiated by a xenon lamp with the power of 210W and the wavelength range of 200-1100nm to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 100W for 25min.
(2) Adsorption stage
Placing the ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp in a high-low temperature vacuum probe test platform, and introducing NO gas with the concentration of 500ppm for 30min, wherein the resistance of the sensor is obviously changed.
(3) Desorption stage
NO was turned off and 300ppm argon was continuously fed. Meanwhile, the surface of the ultraviolet-phosphazene-based gas sensor is irradiated by a xenon lamp with the power of 210W and the wavelength range of 200-1100nm for 3 min. And detecting and displaying the real-time resistance. After the xenon lamp under the parameter irradiates the sensor, the resistance returns to the vicinity of the original resistance value after 7-8s, and is fast and stable, and the cycle test in the last step is repeated.
Example 3
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 100W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet-phosphorus alkenyl sensor is irradiated by a xenon lamp with the power of 250W and the wavelength range of 200-1100nm to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 100W for 25min.
(2) Adsorption stage
Placing the ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp in a high-low temperature vacuum probe test platform, and introducing NO gas with the concentration of 500ppm for 30min, wherein the resistance of the sensor is obviously changed.
(3) Desorption stage
NO was turned off and 300ppm argon was continuously fed. Meanwhile, the surface of the ultraviolet-phosphazene-based gas sensor is irradiated by a xenon lamp with the power of 250W and the wavelength range of 200-1100nm for 3 min. Real-time resistance detection shows that after the xenon lamp under the parameter irradiates the sensor, the resistance returns to the vicinity of the original resistance value after 10 seconds.
Example 4
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 100W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet-phosphorus alkenyl sensor is irradiated by a xenon lamp with the power of 310W and the wavelength range of 200-1100nm to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 100W for 25min.
(2) Adsorption stage
Placing the ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp in a high-low temperature vacuum probe test platform, and introducing NO gas with the concentration of 500ppm for 30min, wherein the resistance of the sensor is obviously changed.
(3) Desorption stage
NO was turned off and 300ppm argon was continuously fed. Meanwhile, the surface of the ultraviolet-phosphazene-based gas sensor is irradiated by a xenon lamp with the power of 310W and the wavelength range of 200-1100nm for 1 min. According to real-time resistance detection, the resistance change is unstable after the xenon lamp under the parameter irradiates the sensor. After illumination, the sensor returns to the vicinity of the original resistance value after 5 seconds to show sawtooth wave-shaped floating, and the resistance of the sensor is unstable after 10 minutes.
Referring to FIG. 5, in the embodiments 1, 3 and 4 of the present invention, the resistance change of the UV-based gas sensors is shown by the desorption resistance change under the illumination of the xenon lamp with the power of 190W, 250W and 310W, and the wavelength of 200-1100nm, and the desorption effect is best when the power of the xenon lamp is 250W.
Example 5
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 200W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet lamp with the power of 20W and the wavelength range of 250-340nm is used for irradiating the ultraviolet phosphazene sensor to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 200W for 20min.
(2) Adsorption stage
Placing the ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp in a high-low temperature vacuum probe test platform, and introducing NO gas with the concentration of 500ppm for 30min, wherein the resistance of the sensor is obviously changed.
(3) Desorption stage
NO was turned off and 300ppm argon was continuously fed. Simultaneously, an ultraviolet lamp with the power of 20W and the wavelength range of 250-340nm is used for irradiating the surface of the ultraviolet-phosphazene-based gas sensor for 1 min. Real-time resistance detection shows that the sensor resistance returns to the vicinity of the original resistance value and remains stable after illumination for 10-15 s. Other parameters are the same, and the resistance recovery speed of the sensor irradiated by the ultraviolet lamp is slower than that irradiated by the xenon lamp.
Example 6
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 500W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet lamp with the power of 20W and the wavelength range of 250-340nm is used for irradiating the ultraviolet phosphazene sensor to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 500W for 10min.
(2) Adsorption stage
The ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp is placed in a high-low temperature vacuum probe test platform, CO gas with the concentration of 200ppm is introduced for 30min, and the resistance of the sensor is obviously changed.
(3) Desorption stage
The CO was turned off and 300ppm argon was continuously fed. Simultaneously, an ultraviolet lamp with the power of 20W and the wavelength range of 250-340nm is used for irradiating the surface of the ultraviolet-phosphazene-based gas sensor for 1 min. Real-time resistance detection shows that the sensor resistance returns to the vicinity of the original resistance value after illumination for 5-8 seconds.
Example 7
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 500W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet-phosphorus alkenyl sensor is irradiated by a xenon lamp with the power of 210W and the wavelength range of 200-1100nm to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 500W for 10min.
(2) Adsorption stage
The ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp is placed in a high-low temperature vacuum probe test platform, CO gas with the concentration of 500ppm is introduced for 30min, and the resistance of the sensor is obviously changed.
(3) Desorption stage
The CO was turned off and 300ppm argon was continuously fed. The surface of the ultraviolet-phosphazene-based gas sensor is irradiated by a xenon lamp with the power of 210W and the wavelength range of 200-1100nm for 5min. Real-time resistance detection shows that the sensor resistance returns to the vicinity of the original resistance value after illumination for 20 seconds.
Example 8
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 500W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet-phosphorus-alkenyl sensor is irradiated by a strong light lamp with the power of 20W and the wavelength range of 400-760nm to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 500W for 10min.
(2) Adsorption stage
Placing the ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp in a high-low temperature vacuum probe test platform, and introducing NO gas with the concentration of 500ppm for 30min, wherein the resistance of the sensor is obviously changed.
(3) Desorption stage
NO was turned off and 300ppm argon was continuously fed. And simultaneously, irradiating the surface of the ultraviolet phosphazene-based gas sensor for 15 minutes by using a strong light with the power of 20W and the wavelength range of 400-760 nm. According to real-time resistance detection display, after the strong light lamp under the parameter irradiates the sensor, the resistance recovery speed is slower. After illumination, the sensor returns to the vicinity of the original resistance value after 10 minutes.
Example 9
The ultraviolet light roasting lamp with the wavelength range of 0.75-5 mu m and the power of 500W is utilized to pretreat the ultraviolet light alkenyl gas sensor. In the desorption stage, the ultraviolet-phosphorus-alkenyl sensor is irradiated by an infrared lamp with the power of 20W and the wavelength range of 850nm to improve the desorption performance, and the specific steps are as follows:
(1) Early preparation
And (3) carrying out vacuum suction filtration on the graphene film and the purple phosphazene to prepare a heterojunction, and sealing and coating conductive adhesive to assemble the purple phosphazene gas sensor. The sensor was irradiated with an infrared baking lamp having a wavelength range of 0.75-5 μm and a power of 500W for 10min.
(2) Adsorption stage
Placing the ultraviolet phosphoenyl sensor pretreated by the infrared baking lamp in a high-low temperature vacuum probe test platform, and introducing NO gas with the concentration of 500ppm for 30min, wherein the resistance of the sensor is obviously changed.
(3) Desorption stage
NO was turned off and 300ppm argon was continuously fed. The surface of the ultraviolet-phosphazene-based gas sensor was irradiated with an infrared lamp having a power of 20W and a wavelength range of 850nm for 30 minutes. According to real-time resistance detection, after the strong light lamp under the parameter irradiates the sensor, the resistance returns slowly. After illumination, the resistance of the sensor can only recover 10% of the resistance change (DeltaR) before and after adsorption after 30 min.
The above is only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited by this, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (6)
1. A method for improving desorption performance of a purple phosphazene-based gas sensor, which is characterized by comprising the following steps: step 1), compounding a graphene film and the purple phosphazene to prepare a heterojunction, assembling the heterojunction into a purple phosphazene gas sensor, and placing the gas sensor on a gas-sensitive test platform;
step 2), introducing Ar gas, and preprocessing the ultraviolet-phosphorus-based gas sensor by adopting an infrared baking lamp;
step 3), introducing test gas, and starting the ultraviolet-phosphorus-based gas sensor to adsorb the gas;
step 4), introducing Ar gas, and adopting an external light source to carry out photoinduced desorption treatment on the ultraviolet phosphazene gas sensor; the test gas is NO, CO and H 2 S、C 2 H 5 OH or CHOH;
the external light source is a xenon light source, an ultraviolet light source, a strong light source or an infrared light source;
the purple phosphazene is prepared by adopting a physical method, bulk purple phosphazene is dispersed in glycol, and after ultrasonic crushing is carried out for 0-10h, continuous laser is utilized to bombard the purple phosphazene dispersion liquid to obtain the purple phosphazene;
the wavelength of the light source used for the photoinduced desorption treatment is 200-1100nm, the power is 5-400W, and the illumination time is 0-1h.
2. The method for improving desorption performance of a purple phosphazene-based gas sensor according to claim 1, wherein in the step 1), the graphene film is prepared by adopting a chemical vapor deposition method, and 0-5 layers of graphene film are grown on a copper foil substrate by taking methane as a carbon source.
3. The method for improving desorption performance of a purple phosphazene-based gas sensor according to claim 1, wherein in the step 1), a graphene film and purple phosphazene are compounded into a heterojunction by a vacuum suction filtration method.
4. The method for improving desorption performance of a purple phosphazene based gas sensor according to claim 1, wherein in the step 2) and the step 4), the Ar gas concentration is 0-800ppm, and the ventilation time is 0-1h.
5. The method for improving desorption performance of a purple phosphorus alkenyl gas sensor according to claim 1, wherein in the step 2), the wavelength of the infrared baking lamp is 0.75-5 μm, the power is 100-500W, and the illumination time is 0-40min.
6. The method for improving desorption performance of a purple phospholine based gas sensor of claim 1, wherein in step 3), the concentration of the test gas is 0-1000ppm and the aeration time is 0-1h.
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