CN114281249B - Flash memory particle improvement method, flash memory particle, memory and electronic equipment - Google Patents
Flash memory particle improvement method, flash memory particle, memory and electronic equipment Download PDFInfo
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- CN114281249B CN114281249B CN202111450966.1A CN202111450966A CN114281249B CN 114281249 B CN114281249 B CN 114281249B CN 202111450966 A CN202111450966 A CN 202111450966A CN 114281249 B CN114281249 B CN 114281249B
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Abstract
The application provides an improved method of flash memory particles, the flash memory particles, a memory and an electronic device, wherein the method comprises the following steps: setting a storage mode of at least one predetermined empty flash block, that is, any one of the empty flash blocks except for two empty flash blocks respectively located at the outermost sides in the flash granules, to an SLC mode; the predetermined performance parameters stored in the predetermined specific flash memory blocks are correspondingly restored to the predetermined empty flash memory blocks one by one, the predetermined empty flash memory blocks, namely one specific flash memory block in the flash memory particles, are updated to be the specific flash memory blocks, and the predetermined specific flash memory blocks are updated to be the normal flash memory blocks. According to the method and the device, at least one preset empty flash memory block is started, the number of the flash memory blocks can be increased under the same flash memory particle size, so that the storage density is effectively improved, and the problem of waste of storage resources in the prior art is solved.
Description
Technical Field
The present application relates to the field of semiconductors, and in particular, to an improved method of flash memory particles, memory, and electronic devices.
Background
In 3D NAND flash memory products, the performance of the grain-edge flash memory blocks is poor due to the problem of the process, so that a plurality of empty flash memory blocks are usually reserved at the upper and lower edges of the grain, and the empty flash memory blocks are not used as normal flash memory blocks for customer data storage.
With the development of semiconductor technology, the number of storage layers of the 3D NAND particles is continuously increased, the required supporting structures are increased, and the flash memory blocks contained in the flash memory particles are reduced due to the occupation of the control of the flash memory particles, so that the percentage ratio of the total number of the flash memory blocks in the particles is increased; therefore, the influence of the existence of a plurality of empty flash memory blocks on the storage density is more and more obvious, and the waste of data storage resources is caused.
Therefore, a solution to the problem of wasting resources in the flash granule storage is needed.
The above information disclosed in the background section is only for enhancement of understanding of the background art from the technology described herein and, therefore, may contain some information that does not form the prior art that is already known in the country to a person of ordinary skill in the art.
Disclosure of Invention
The main object of the present application is to provide an improved method for flash memory granule, memory and electronic device, so as to solve the problem of waste of flash memory granule storage resources in the prior art.
According to an aspect of an embodiment of the present invention, there is provided an improved method of flash memory granule including a plurality of empty flash blocks, at least one normal flash block, at least one specific flash block, at least one normal flash block, and a plurality of empty flash blocks stacked in this order, the empty flash blocks being flash blocks storing no data, the specific flash blocks being flash blocks storing predetermined performance parameters, the predetermined performance parameters being performance parameters of the flash granule, the normal flash blocks being flash blocks storing user data, the method comprising: setting a storage mode of at least one preset empty flash memory block as an SLC mode, wherein the preset empty flash memory block is any one of the empty flash memory blocks except for two empty flash memory blocks which are respectively positioned at the outermost sides in the flash memory particles; and correspondingly restoring the preset performance parameters stored in preset specific flash memory blocks to the preset empty flash memory blocks one by one, so that the preset empty flash memory blocks are updated into the specific flash memory blocks, and the preset specific flash memory blocks are updated into normal flash memory blocks, wherein the preset specific flash memory blocks are one specific flash memory block in the flash memory particles.
Optionally, the step of transferring the predetermined performance parameters stored in the predetermined specific flash memory block into the predetermined empty flash memory block in a one-to-one correspondence manner, so that the predetermined empty flash memory block is updated to the specific flash memory block, and the predetermined specific flash memory block is updated to a normal flash memory block, includes: storing the predetermined performance parameters in predetermined specific flash memory blocks into the predetermined empty flash memory blocks; the predetermined performance parameters in the predetermined specific flash memory block are erased.
Optionally, the specific flash memory blocks include two specific flash memory blocks, namely a first specific flash memory block and a second specific flash memory block, wherein the first specific flash memory block is a flash memory block for storing initial performance parameters, the second specific flash memory block is a flash memory block for storing performance parameters after user use, the predetermined empty flash memory blocks include two predetermined empty flash memory blocks, namely a first predetermined empty flash memory block and a second predetermined empty flash memory block, and the predetermined performance parameters stored in the predetermined specific flash memory blocks are transferred to the predetermined empty flash memory blocks in a one-to-one correspondence manner, so that the predetermined empty flash memory blocks are updated into the specific flash memory blocks, including: the initial performance parameters stored in the first specific flash memory block are transferred to the first preset empty flash memory block, so that the first preset empty flash memory block is updated into the first specific flash memory block; and transferring the performance parameters stored in the second specific flash memory block after the user uses to the second preset empty flash memory block, so that the second preset empty flash memory block is updated into the second specific flash memory block.
Optionally, the method further comprises: setting a storage mode of at least one target empty flash block to be an SLC mode, so that the target empty flash block is updated to be a standby flash block, wherein the target empty flash block is any one of the empty flash blocks except for two empty flash blocks which are respectively located at the outermost sides in the flash particles and are different from the preset empty flash block.
Optionally, the method further comprises: and under the condition that the specific flash memory block can not read data normally, the performance parameters stored in the specific flash memory block are transferred to the spare flash memory block.
Optionally, after the predetermined performance parameters stored in the predetermined specific flash memory block are transferred to the predetermined empty flash memory block in a one-to-one correspondence, so that the predetermined empty flash memory block is updated to the specific flash memory block, and the predetermined specific flash memory block is updated to a normal flash memory block, the method further includes: and transferring the user data to the updated normal flash memory block.
Optionally, the storage mode of the normal flash memory block is at least one of the following: TLC mode, QLC mode.
According to another aspect of the embodiments of the present invention, there is also provided a flash memory particle formed by any one of the methods.
According to another aspect of the embodiments of the present invention, there is also provided a memory including a plurality of the above-mentioned flash memory particles.
According to another aspect of the embodiment of the invention, there is also provided an electronic device including the memory.
In an embodiment of the present invention, there is provided an improved method of flash memory granule including a plurality of empty flash blocks, at least one normal flash block, at least one specific flash block, at least one normal flash block, and a plurality of empty flash blocks stacked in this order, the empty flash blocks, the normal flash blocks, and the specific flash blocks being flash blocks that do not store data, flash blocks that store user data, and flash blocks that store predetermined performance parameters, respectively, the predetermined performance parameters being the performance parameters of the flash granule, the method including: setting at least one predetermined empty flash block, that is, a storage mode of any one of the empty flash blocks except for two empty flash blocks respectively located at the outermost sides in the flash granules, to an SLC mode; and correspondingly restoring the preset performance parameters stored in preset specific flash memory blocks to the preset empty flash memory blocks one by one, updating the preset empty flash memory blocks, namely one specific flash memory block in the flash memory particles, into the specific flash memory blocks, and enabling the preset specific flash memory blocks to be updated into normal flash memory blocks. According to the method and the device, at least one preset empty flash memory block is started, the number of the flash memory blocks can be increased under the same flash memory particle size, so that the storage density is effectively improved, and the problem of waste of storage resources in the prior art is solved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a schematic diagram of the structure of raw flash memory particles in one embodiment of the present application;
FIG. 2 illustrates a flow chart of an improved method of flash memory particles of one embodiment of the present application;
FIG. 3 is a schematic diagram of a flash memory grain structure in an exemplary embodiment of the present application;
FIG. 4 is a schematic diagram of a flash memory grain structure according to an embodiment of the present application;
FIG. 5 illustrates a block diagram of flash granule BlkReplace test logic in one embodiment of the present application.
Wherein the above figures include the following reference numerals:
10. blank flash blocks; 20. normal flash blocks; 30. specific flash memory blocks; 301. a first specific flash block; 302. a second specific flash block; 40. spare flash blocks.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
In order to make the present application solution better understood by those skilled in the art, the following description will be made in detail and with reference to the accompanying drawings in the embodiments of the present application, it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, shall fall within the scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the present application described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. Furthermore, in the description and in the claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element or "connected" to the other element through a third element.
As described in the background art, in order to solve the problem of the waste of storage resources of the flash memory granule in the prior art, in an exemplary embodiment of the present application, an improved method for flash memory granule, memory and electronic device are provided.
According to embodiments of the present application, an improved method of flash memory grain is provided. As shown in fig. 1, the flash memory granule includes a plurality of empty flash memory blocks 10, at least one normal flash memory block 20, at least one specific flash memory block 30, at least one normal flash memory block 20, and a plurality of empty flash memory blocks 10 stacked in this order, wherein the empty flash memory blocks 10 are flash memory blocks storing no data, the specific flash memory blocks 30 are flash memory blocks storing predetermined performance parameters, the predetermined performance parameters are performance parameters of the flash memory granule, and the normal flash memory blocks 20 are flash memory blocks storing user data, as shown in fig. 1.
Fig. 2 is a flow chart of an improved method of flash memory granule according to an embodiment of the present application. As shown in fig. 2, the method comprises the steps of:
step S101, setting a storage mode of at least one preset empty flash memory block as an SLC mode, wherein the preset empty flash memory block is any one of the empty flash memory blocks except for two empty flash memory blocks respectively positioned at the outermost sides in the flash memory particles;
step S102, the predetermined performance parameters stored in the predetermined specific flash memory blocks are transferred to the predetermined empty flash memory blocks in a one-to-one correspondence manner, so that the predetermined empty flash memory blocks are updated to the specific flash memory blocks, and the predetermined specific flash memory blocks are updated to normal flash memory blocks, wherein the predetermined specific flash memory blocks are one of the specific flash memory blocks in the flash memory granules.
According to the method for improving the flash memory grain, at least one preset empty flash memory block is set to be in an SLC mode and used for transferring preset performance parameters stored in preset specific flash memory blocks, so that the preset empty flash memory blocks are updated to be the specific flash memory blocks, and the preset specific flash memory blocks are updated to be normal flash memory blocks.
In a specific embodiment of the present application, as shown in fig. 3, the predetermined performance parameters stored in the predetermined specific flash memory block 30 are transferred to the predetermined empty flash memory block 10 in a one-to-one correspondence manner, so that the predetermined empty flash memory block 10 is updated to the specific flash memory block 30, and the predetermined specific flash memory block 30 is updated to the normal flash memory block 20, including: storing the predetermined performance parameter in the predetermined empty flash block 10 in a predetermined specific flash block 30; the predetermined performance parameters in the predetermined specific flash memory block 30 are erased. After the preset performance parameters in the preset specific flash memory block are stored into the preset empty flash memory block, the preset performance parameters in the preset specific flash memory block are erased, so that the preset specific flash memory block can be updated into a normal flash memory block in a high-efficiency and accurate manner, the preset empty flash memory block is updated into the specific flash memory block, and further subsequent storage of user data is facilitated.
In another specific embodiment of the present application, two specific flash blocks are shown in fig. 1, namely, a first specific flash block 301 and a second specific flash block 302, where the first specific flash block 301 is a flash block storing initial performance parameters, the second specific flash block 302 is a flash block storing performance parameters after user use, two predetermined empty flash blocks 10 are shown as a first predetermined empty flash block 10 and a second predetermined empty flash block 10, and the predetermined performance parameters stored in the predetermined specific flash block 30 are transferred to the predetermined empty flash block 10 in a one-to-one correspondence manner, so that the predetermined empty flash block 10 is updated to the specific flash block 30, as shown in fig. 3, and the method includes: the initial performance parameters stored in the first specific flash memory block 301 are transferred to the first predetermined empty flash memory block 10, so that the first predetermined empty flash memory block 10 is updated to the first specific flash memory block 301; and transferring the performance parameters stored in the second specific flash memory block 302 after the user uses into the second predetermined empty flash memory block 10, so that the second predetermined empty flash memory block 10 is updated to the second specific flash memory block 302. In the method, the stored performance parameters in the two specific flash memory blocks are respectively transferred to the preset empty flash memory blocks, namely, the first preset empty flash memory block and the second preset empty flash memory block, so that the storage density can be further improved.
In yet another embodiment of the present application, the method further includes: the storage mode of at least one target empty flash block 10 is set to SLC mode such that the target empty flash block 10 is updated to a spare flash block 40, and the target empty flash block 10 is any one of the empty flash blocks 10 except for two of the empty flash blocks 10 respectively located at the outermost sides among the flash particles and is different from the predetermined empty flash block 10 as shown in fig. 4. In this embodiment, the spare flash memory blocks are added in addition to the function of the predetermined specific flash memory blocks in the SLC mode, so that the predetermined performance parameters stored in the predetermined specific flash memory blocks can be restored to the spare flash memory blocks in case of damage of the specific flash memory blocks, thereby improving the yield of the flash memory product and improving the product reliability of the flash memory particles in the use process.
In yet another embodiment of the present application, the method further includes: in the case that the specific flash memory block 30 cannot read data normally, the performance parameters stored in the specific flash memory block 30 are transferred to the spare flash memory block 40, as shown in fig. 4. When the specific flash memory block can not read data normally, the data in the specific flash memory block can be transferred to the spare flash memory block, so that the normal use of the flash memory particles is further ensured, and the reliability of the flash memory particles is ensured.
In another embodiment of the present application, after transferring the predetermined performance parameters stored in the predetermined specific flash memory block into the predetermined empty flash memory block in a one-to-one correspondence manner, so that the predetermined empty flash memory block is updated to the specific flash memory block, and the predetermined specific flash memory block is updated to the normal flash memory block, the method further includes: and transferring the user data to the updated normal flash memory block. The predetermined empty flash memory block is used for storing the data of the predetermined specific flash memory block, the predetermined specific flash memory block is updated into a normal flash memory block, and the user data is transferred into the updated normal flash memory block, that is, the user data can be stored into the normal flash memory block and the updated flash memory block, thereby further improving the storage density and reducing the waste of storage resources
In yet another embodiment of the present application, the storage mode of the normal flash memory block is at least one of the following: TLC mode, QLC mode. The TLC and QLC modes have more storage bits and lower cost, and of course, the storage modes of the normal flash memory block in the present application are not limited to the above two modes, but may be other modes, and a person skilled in the art may select a suitable storage mode of the normal flash memory block according to actual situations.
In another exemplary embodiment of the present application, a flash memory particle formed by any one of the above methods is also provided. The method comprises the following steps:
step S101, setting a storage mode of at least one preset empty flash memory block as an SLC mode, wherein the preset empty flash memory block is any one of the empty flash memory blocks except for two empty flash memory blocks respectively positioned at the outermost sides in the flash memory particles;
step S102, the predetermined performance parameters stored in the predetermined specific flash memory blocks are transferred to the predetermined empty flash memory blocks in a one-to-one correspondence manner, so that the predetermined empty flash memory blocks are updated to the specific flash memory blocks, and the predetermined specific flash memory blocks are updated to normal flash memory blocks, wherein the predetermined specific flash memory blocks are one of the specific flash memory blocks in the flash memory granules.
In a specific embodiment of the present application, as shown in fig. 5, the above-mentioned blkrepplace test logic respectively tests the updated first predetermined specific flash memory block and the updated second predetermined specific flash memory block, and if the updated first predetermined specific flash memory block and the updated second predetermined specific flash memory block are normal, the flash memory granule test is passed; if at least one of the updated specific flash memory blocks is abnormal, the spare flash memory block is tested, and if the spare flash memory test is normal, the flash memory particle test is passed.
In yet another exemplary embodiment of the present application, a memory is also provided, where the memory includes a plurality of the above-described flash memory particles. The above memory is not limited to a 3D NAND memory.
In yet another exemplary embodiment of the present application, an electronic device is also provided, including the memory described above.
In another exemplary embodiment of the present application, a computer readable storage medium is provided, the computer readable storage medium including a stored program, wherein the program performs any one of the above methods for adjusting the deep learning model.
In another exemplary embodiment of the present application, a memory and an improved apparatus for performing any of the improved methods are provided.
In the above memory device, the improvement device is configured to execute the improvement method of the above flash granule, where the improvement method of the above flash granule sets at least one predetermined empty flash block to be in SLC mode and is used to transfer the predetermined performance parameter stored in the predetermined specific flash block, so that the predetermined empty flash block is updated to the specific flash block, and the predetermined specific flash block is updated to a normal flash block.
In order to enable those skilled in the art to more clearly understand the technical solutions of the present application, the technical solutions of the present application will be described in detail below with reference to specific examples and comparative examples.
Example 1
This embodiment provides an improved method of flash memory grain. As shown in fig. 1, the flash memory granule includes a plurality of empty flash memory blocks 10, at least one normal flash memory block 20, at least one specific flash memory block 30, at least one normal flash memory block 20, and a plurality of empty flash memory blocks 10 stacked in this order, and as shown in fig. 2, the empty flash memory blocks 10 are flash memory blocks that do not store data, the specific flash memory blocks 30 are flash memory blocks that store predetermined performance parameters, the predetermined performance parameters are performance parameters of the flash memory granule, and the normal flash memory blocks 20 are flash memory blocks that store user data.
The improved method of flash memory particles in this embodiment includes the steps of:
setting a storage mode of at least one preset empty flash memory block as an SLC mode, wherein the preset empty flash memory block is any one of the empty flash memory blocks except for two empty flash memory blocks respectively positioned at the outermost sides in the flash memory particles;
the method comprises the steps of correspondingly transferring preset performance parameters stored in preset specific flash memory blocks into preset empty flash memory blocks one by one, enabling the preset empty flash memory blocks to be updated into the specific flash memory blocks, and enabling the preset specific flash memory blocks to be updated into normal flash memory blocks, wherein the preset specific flash memory blocks comprise a first specific flash memory block and a second specific flash memory block;
and setting the storage mode of at least one target empty flash block to be an SLC mode, so that the target empty flash block is updated to be a spare flash block.
The improved flash memory grain structure is shown in fig. 4.
From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:
1) The method for improving the flash memory granule in the present application, wherein the flash memory granule comprises a plurality of empty flash memory blocks, at least one normal flash memory block, at least one specific flash memory block, at least one normal flash memory block and a plurality of empty flash memory blocks which are sequentially stacked, and the empty flash memory blocks, the normal flash memory blocks and the specific flash memory blocks are respectively a flash memory block without data, a flash memory block with user data and a flash memory block with preset performance parameters, and the preset performance parameters are the performance parameters of the flash memory granule, and the method comprises the following steps: setting at least one predetermined empty flash block, that is, a storage mode of any one of the empty flash blocks except for two of the empty flash blocks respectively located at the outermost sides of the flash grains, to an SLC mode; and transferring the preset performance parameters stored in the preset specific flash memory blocks into the preset empty flash memory blocks in a one-to-one correspondence manner, updating the preset empty flash memory blocks, namely one specific flash memory block in the flash memory particles, into the specific flash memory blocks, and updating the preset specific flash memory blocks into normal flash memory blocks. According to the improved method for the flash memory particles, at least one preset empty flash memory block is updated into the specific flash memory block, namely, the flash memory block which does not store data is adjusted into the flash memory card which can store the data, so that the number of the flash memory blocks can be increased under the condition of the same flash memory particle size, the storage density is effectively improved, and the problem of waste of storage resources in the prior art is solved.
2) The flash memory granule of the present application is formed by the improved method of any one of the above flash memory granules, where the flash memory granule includes a plurality of empty flash memory blocks, at least one normal flash memory block, at least one specific flash memory block, at least one normal flash memory block, and a plurality of empty flash memory blocks stacked in order, the empty flash memory blocks, the normal flash memory blocks, and the specific flash memory blocks are respectively a flash memory block that does not store data, a flash memory block that stores user data, and a flash memory block that stores a predetermined performance parameter, where the predetermined performance parameter is a performance parameter of the flash memory granule, and the method includes: setting at least one predetermined empty flash block, that is, a storage mode of any one of the empty flash blocks except for two of the empty flash blocks respectively located at the outermost sides of the flash grains, to an SLC mode; and transferring the preset performance parameters stored in the preset specific flash memory blocks into the preset empty flash memory blocks in a one-to-one correspondence manner, updating the preset empty flash memory blocks, namely one specific flash memory block in the flash memory particles, into the specific flash memory blocks, and updating the preset specific flash memory blocks into normal flash memory blocks. According to the improved method for the flash memory particles, at least one preset empty flash memory block is updated into the specific flash memory block, namely, the flash memory block which does not store data is adjusted into the flash memory card which can store the data, so that the number of the flash memory blocks can be increased under the condition of the same flash memory particle size, the storage density is effectively improved, and the problem of waste of storage resources in the prior art is solved.
3) The memory of the present application includes a plurality of the above-mentioned flash granules, the above-mentioned flash granules include a plurality of empty flash blocks, at least one normal flash block, at least one specific flash block, at least one normal flash block and a plurality of empty flash blocks that are stacked in order, the above-mentioned empty flash blocks, normal flash blocks and specific flash blocks are flash blocks without storing data, flash blocks storing user data and flash blocks storing predetermined performance parameters, the above-mentioned predetermined performance parameters are the performance parameters of the above-mentioned flash granules, the above-mentioned method includes: setting at least one predetermined empty flash block, that is, a storage mode of any one of the empty flash blocks except for two of the empty flash blocks respectively located at the outermost sides of the flash grains, to an SLC mode; and transferring the preset performance parameters stored in the preset specific flash memory blocks into the preset empty flash memory blocks in a one-to-one correspondence manner, updating the preset empty flash memory blocks, namely one specific flash memory block in the flash memory particles, into the specific flash memory blocks, and updating the preset specific flash memory blocks into normal flash memory blocks. According to the improved method for the flash memory particles, at least one preset empty flash memory block is updated into the specific flash memory block, namely, the flash memory block which does not store data is adjusted into the flash memory card which can store the data, so that the number of the flash memory blocks can be increased under the condition of the same flash memory particle size, the storage density is effectively improved, and the problem of waste of storage resources in the prior art is solved.
4) The electronic device of the present application, including the memory, the memory includes a plurality of the flash granules, the flash granules include a plurality of empty flash blocks, at least one normal flash block, at least one specific flash block, at least one normal flash block, and a plurality of empty flash blocks stacked in order, the empty flash blocks, the normal flash blocks, and the specific flash blocks are respectively a flash block that does not store data, a flash block that stores user data, and a flash block that stores a predetermined performance parameter, the predetermined performance parameter is a performance parameter of the flash granules, the method includes: setting at least one predetermined empty flash block, that is, a storage mode of any one of the empty flash blocks except for two of the empty flash blocks respectively located at the outermost sides of the flash grains, to an SLC mode; and transferring the preset performance parameters stored in the preset specific flash memory blocks into the preset empty flash memory blocks in a one-to-one correspondence manner, updating the preset empty flash memory blocks, namely one specific flash memory block in the flash memory particles, into the specific flash memory blocks, and updating the preset specific flash memory blocks into normal flash memory blocks. According to the improved method for the flash memory particles, at least one preset empty flash memory block is updated into the specific flash memory block, namely, the flash memory block which does not store data is adjusted into the flash memory card which can store the data, so that the number of the flash memory blocks can be increased under the condition of the same flash memory particle size, the storage density is effectively improved, and the problem of waste of storage resources in the prior art is solved.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (10)
1. An improved method of flash memory granules, wherein the flash memory granules comprise a plurality of empty flash memory blocks, at least one normal flash memory block, at least one specific flash memory block, at least one normal flash memory block and a plurality of empty flash memory blocks which are sequentially stacked, the empty flash memory blocks are flash memory blocks which do not store data, the specific flash memory blocks are flash memory blocks which store predetermined performance parameters, the predetermined performance parameters are performance parameters of the flash memory granules, and the normal flash memory blocks are flash memory blocks which store user data, the method comprising:
setting a storage mode of at least one preset empty flash memory block as an SLC mode, wherein the preset empty flash memory block is any one of the empty flash memory blocks except for two empty flash memory blocks which are respectively positioned at the outermost sides in the flash memory particles;
and correspondingly restoring the preset performance parameters stored in preset specific flash memory blocks to the preset empty flash memory blocks one by one, so that the preset empty flash memory blocks are updated into the specific flash memory blocks, and the preset specific flash memory blocks are updated into normal flash memory blocks, wherein the preset specific flash memory blocks are one specific flash memory block in the flash memory particles.
2. The method of claim 1, wherein the one-to-one correspondence of predetermined performance parameters stored in a predetermined specific flash block is restored to the predetermined empty flash block such that the predetermined empty flash block is updated to the specific flash block and such that the predetermined specific flash block is updated to a normal flash block, comprising:
storing the predetermined performance parameters in predetermined specific flash memory blocks into the predetermined empty flash memory blocks;
the predetermined performance parameters in the predetermined specific flash memory block are erased.
3. The method of claim 1, wherein the specific flash memory blocks are two, respectively, a first specific flash memory block and a second specific flash memory block, the first specific flash memory block is a flash memory block storing initial performance parameters, the second specific flash memory block is a flash memory block storing performance parameters after user use, the predetermined empty flash memory blocks are two, respectively, a first predetermined empty flash memory block and a second predetermined empty flash memory block, and the predetermined performance parameters stored in the predetermined specific flash memory blocks are transferred to the predetermined empty flash memory blocks in a one-to-one correspondence manner, so that the predetermined empty flash memory blocks are updated to the specific flash memory blocks, comprising:
the initial performance parameters stored in the first specific flash memory block are transferred to the first preset empty flash memory block, so that the first preset empty flash memory block is updated into the first specific flash memory block;
and transferring the performance parameters stored in the second specific flash memory block after the user uses to the second preset empty flash memory block, so that the second preset empty flash memory block is updated into the second specific flash memory block.
4. The method according to claim 1, wherein the method further comprises:
setting a storage mode of at least one target empty flash block to be an SLC mode, so that the target empty flash block is updated to be a standby flash block, wherein the target empty flash block is any one of the empty flash blocks except for two empty flash blocks which are respectively located at the outermost sides in the flash particles and are different from the preset empty flash block.
5. The method according to claim 4, wherein the method further comprises:
and under the condition that the specific flash memory block can not read data normally, the performance parameters stored in the specific flash memory block are transferred to the spare flash memory block.
6. The method according to any one of claims 1 to 5, wherein after transferring predetermined performance parameters stored in a predetermined specific flash block into the predetermined empty flash block in a one-to-one correspondence, so that the predetermined empty flash block is updated to the specific flash block, and so that the predetermined specific flash block is updated to a normal flash block, the method further comprises:
and transferring the user data to the updated normal flash memory block.
7. The method of any of claims 1 to 5, wherein the normal flash memory block is stored in at least one of the following modes: TLC mode, QLC mode.
8. A flash memory pellet, characterized in that the flash memory pellet is formed by the method of any one of claims 1 to 7.
9. A memory comprising a plurality of flash memory particles, the flash memory particles being the flash memory particles of claim 7.
10. An electronic device, comprising: the memory of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111450966.1A CN114281249B (en) | 2021-11-30 | 2021-11-30 | Flash memory particle improvement method, flash memory particle, memory and electronic equipment |
Applications Claiming Priority (1)
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| CN109496300A (en) * | 2018-03-23 | 2019-03-19 | 华为技术有限公司 | A kind of storage medium rubbish recovering method, storage medium and program product |
| CN109753443A (en) * | 2019-01-12 | 2019-05-14 | 湖南国科微电子股份有限公司 | A kind of data processing method, device and electronic equipment |
| CN113093993A (en) * | 2021-03-25 | 2021-07-09 | 深圳大普微电子科技有限公司 | Flash memory space dynamic allocation method and solid state disk |
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| TWI425523B (en) * | 2008-03-25 | 2014-02-01 | Asmedia Technology Inc | Hybrid flash memory storage device and method of controlling the same |
| TWI447580B (en) * | 2012-04-03 | 2014-08-01 | Phison Electronics Corp | Memory space managing method, and memory controller and memory storage device using the same |
| EP3133604B1 (en) * | 2015-08-17 | 2020-11-11 | Harman Becker Automotive Systems GmbH | Method and device for fail-safe erase of flash memory |
| US10297333B2 (en) * | 2016-04-08 | 2019-05-21 | Steven McConnell | Drying system and method |
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| CN109496300A (en) * | 2018-03-23 | 2019-03-19 | 华为技术有限公司 | A kind of storage medium rubbish recovering method, storage medium and program product |
| CN109753443A (en) * | 2019-01-12 | 2019-05-14 | 湖南国科微电子股份有限公司 | A kind of data processing method, device and electronic equipment |
| CN113093993A (en) * | 2021-03-25 | 2021-07-09 | 深圳大普微电子科技有限公司 | Flash memory space dynamic allocation method and solid state disk |
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