CN114271828B - Degradable high-array flexible device for brain-computer interface and preparation method thereof - Google Patents
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Abstract
The invention discloses a degradable high-array flexible device for a brain-computer interface, which comprises a flexible substrate, a flexible conductive electrode, a supporting layer, an electric insulation layer and a semiconductor layer which are sequentially laminated, wherein the flexible conductive electrode, the electric insulation layer and the semiconductor layer jointly form an organic electrochemical transistor array for acquiring, amplifying and transmitting weak brain-computer signals. The flexible sensing device is made of materials with good biocompatibility and biodegradability, can perfectly fit a curved topological structure of a brain, can be used as a novel cerebral cortex monitoring device with a common outline and full coverage, can be used as a signal recording sensor for amplifying weak electroencephalogram signals, remarkably improves signal to noise ratio and signal acquisition capacity, ensures high-density multiplexing through an electromechanical transistor array structure, enables acquired signals to have higher spatial and temporal resolution, and can breakthrough the monitoring and recording of physiological electric signals on a cell level.
Description
Technical Field
The invention relates to the field of flexible electronic technology and artificial intelligence, in particular to a degradable high-array flexible device for brain-computer interface and an implementation method thereof.
Background
In the foreseeable future, artificial intelligence and machine intelligence are gradually integrated, the storage and operation capabilities of the machine are fully exerted, the thinking and innovation capabilities of the human brain are fused, and the intelligent fusion of the brain and the machine is realized. The brain-computer interface establishes a brand-new communication and control channel independent of peripheral nerves and muscles between the brain and the external environment, thereby realizing direct interaction between the brain and external equipment. The technology can establish communication between the brain of a human (or other animals) and the external environment so as to achieve the purpose of controlling equipment, and further plays roles of monitoring, replacing, improving/recovering, enhancing and supplementing.
Therefore, the high sensitivity and high space-time resolution monitoring of the electroencephalogram signals is of great importance. The physiological electric signal belongs to a weak signal unstable under a strong noise background, and has the characteristics of strong noise, weak signal, low frequency, strong randomness and the like. The traditional non-invasive approach is to place electrodes on the scalp of the brain to measure the current of brain activity. However, scalp electroencephalogram signals are small, interference noise is large, and detection results are easy to distort. Invasive monitoring of brain electrical signals requires implantation of devices into the surface or cortex (extradural or subdural) of the brain cortex by neurosurgery. Invasive devices can be stably placed for a long period of time, directly record neuron electrical activity, reduce signal attenuation, and have much higher signal-to-noise ratio and spatial resolution than non-invasive devices. The intracutaneous monitoring electrode needs to be fully implanted, belongs to invasive implantation, has great technical difficulty and secondary infection possibility, and can cause secondary damage once craniocerebral infection, electrode failure or electrode service life is finished. Therefore, minimally invasive implantation of the cerebral cortex is easier to achieve practical use than intracutaneous implantation. In addition, most invasive monitoring electrodes are rigid, as typically represented by michigan and utah electrodes, and are much stiffer than brain tissue, difficult to move with the brain, and prone to callus formation, thereby weakening the signal. Therefore, the flexible novel cerebral cortex monitoring device which can realize contour co-fusion and full coverage with the curved topological structure of the brain is certainly a future development trend.
Unlike the in-situ recording of the traditional nerve electrode, the organic electrochemical transistor can further amplify weak electrocardio-brain signals and remarkably improve the signal-to-noise ratio, and has been studied and applied to the monitoring and recording of physiological electric signals. Meanwhile, the ultrathin and soft mechanical characteristics of the organic electrochemical transistor allow the organic electrochemical transistor to be closely attached to biological tissues for a long time, so that the impedance and sliding of the interface between the device and the skin are reduced, and the motion artifact is reduced to the maximum extent so as to perform continuous high-fidelity monitoring. However, in practical applications, the flexible organic electrochemical transistor still lacks a high-sensitivity biodegradable conductive channel material, and the development of the degradable organic electrochemical transistor array is greatly limited due to the matched flexible process technology and the multi-channel device structure design. Non-degradable organic electrochemical transistors can cause chronic immune responses in visceral tissues, requiring a secondary surgery for device replacement or removal. The number of samples of the OECT arrays reported so far is low enough to cover the full view of brain activity. Thus, improvements are needed.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a degradable high-array flexible device for a brain-computer interface and an implementation method thereof, which are combined with material engineering, flexible electronic technology, biomedical engineering and the like, and are mainly used for solving the problems of weak acquisition capability, rigidity, low space-time resolution and the like of the traditional nerve electrode for signals.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a degradable high-array flexible device for brain-computer interface comprises
A flexible substrate made of a biodegradable polymer synthesized from one ester bond;
the flexible conductive electrode is prepared by patterning and photoetching a metal or alloy material which has good conductivity, electrochemical stability and biological safety and can be degraded on the flexible substrate according to an organic electrochemical transistor array;
the support layer is prepared by coating a biodegradable organic insulating material on the flexible substrate and the flexible conductive electrode and is used for preventing the flexible substrate from being dissolved by the electric insulating layer;
the electric insulating layer is made of polymer materials with high dielectric constant and good chemical stability by patterning and photoetching on the supporting layer according to an organic electrochemical transistor array;
the semiconductor layer is made of a biosafety semiconductor material which has high carrier mobility, large unit volume capacitance and can sensitively respond to local potential change by patterning and photoetching on the electric insulation layer according to an organic electrochemical transistor array;
the organic electrochemical transistor array is used for collecting, amplifying and transmitting weak electroencephalogram signals.
Specifically, the thickness of the flexible substrate is 10-20 mu m, the thickness of the flexible conductive electrode is 50-100nm, the thickness of the supporting layer is 0.5-1 mu m, the thickness of the electric insulation layer is 1-2 mu m, and the thickness of the semiconductor layer is 100-200nm.
Specifically, the flexible substrate adopts one of polylactic acid-glycolic acid copolymer, polycaprolactone and polyglycolide.
Specifically, the flexible conductive electrode adopts at least one of pure magnesium, magnesium calcium, magnesium strontium, magnesium zinc, magnesium lithium, magnesium tin, magnesium- (silicon, manganese, zirconium and silver), magnesium yttrium, magnesium zinc rare earth, magnesium neodymium zinc base alloy, magnesium- (gadolinium, lanthanum, cerium and dysprosium), iron base alloy, zinc base alloy, bulk amorphous alloy and doped conductive polymer.
Specifically, the support layer adopts polyvinyl alcohol.
Specifically, the electric insulating layer adopts one of saccharide natural dielectric medium or synthetic polymer.
Specifically, the semiconductor layer adopts one of poly (3-hexylthiophene), a donor-acceptor copolymer, and a P3HT derivative mixed with poly (butylene succinate), polylactic acid, poly (ester urea) and carboxylate substituent of polyurethane.
Based on the above structure, the invention also provides a preparation method of the degradable high-array flexible device for brain-computer interface, which comprises the following steps:
step 1, drying a cleaned substrate;
step 2, spin-coating a biodegradable polymer material on the substrate after the drying treatment, and then annealing to obtain the substrate with the flexible base;
step 3, placing the substrate with the flexible substrate into a vacuum evaporation chamber, evaporating a conductive electrode layer on the flexible substrate, cooling, and performing patterning photoetching treatment on the conductive electrode layer according to the organic electrochemical transistor array to form a flexible conductive electrode on the flexible substrate;
step 4, spin-coating an organic insulating material on the patterned flexible conductive electrode and the corresponding flexible substrate, and then annealing to form a supporting layer;
step 5, spin coating a polymer material with high dielectric constant and good chemical stability on the supporting layer to form an electric insulating layer, carrying out patterning photoetching treatment on the electric insulating layer according to the organic electrochemical transistor array after annealing treatment and cooling, and forming a patterned electric insulating layer on the supporting layer;
step 6, spin coating semiconductor materials on the patterned electric insulating layer and the corresponding supporting layer to form a semiconductor layer, and performing patterning photoetching treatment on the semiconductor layer according to the organic electrochemical transistor array after annealing treatment and cooling to form a patterned semiconductor layer;
and 7, soaking the treated whole body in deionized water, and peeling the device from the substrate from the edge of the flexible substrate to obtain the degradable high-array flexible device for the brain-computer interface.
Specifically, the patterning lithography process in the step 3, the step 5 and the step 6 includes:
spin-coating photoresist on the cooled layer, and sequentially exposing, developing, plasma etching and photoresist removing to obtain the patterned flexible conductive electrode, electrically insulating layer or semiconductor layer.
Specifically, the flexible substrate is made of PLGA materials, the flexible conductive electrode is made of gold materials, the supporting layer is made of PVA materials, the electric insulation layer is made of PVA materials, and the semiconductor layer is made of PEDOT: PSS materials.
Compared with the prior art, the invention has the following beneficial effects:
the flexible sensing device based on the organic electrochemical transistor array structure is manufactured by utilizing the material with good biocompatibility and biodegradability, can be perfectly attached to the curved topological structure of the brain, can be used as a novel cerebral cortex monitoring device with common outline and full coverage, can be used as a signal recording sensor to amplify weak cerebral electric signals, remarkably improve the signal-to-noise ratio and the signal acquisition capacity, ensures high-density multiplexing through the organic electrochemical transistor array structure, ensures that the acquired signals have higher space-time resolution, can breakthrough the monitoring and recording of physiological electric signals on the cellular level, and effectively avoids the problems of infection, wound, operation cost and the like caused by secondary operation in practical application due to the good biological characteristics of the material. The method is suitable for being applied to electroencephalogram signal monitoring.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention.
FIG. 2 is a schematic diagram of an array integration structure according to an embodiment of the present invention.
FIG. 3 is a graph showing experimental data of the present invention-example 1, wherein FIG. 3 (a) is an output characteristic curve of a single device, FIG. 3 (b) is a transfer characteristic curve, FIG. 3 (c) is a graph showing 5Hz AC signal recording, and FIG. 3 (d) is a graph showing degradation of productivity of an array of 100 units.
Fig. 4 is a schematic diagram of experimental data of the present invention-example 2, in which fig. 4 (a) is an output characteristic curve of a single device, fig. 4 (b) is a transfer characteristic curve, fig. 4 (c) is a 50Hz ac signal record chart, and fig. 4 (d) is a high temperature accelerated degradation real object diagram of the device.
Detailed Description
The invention will now be further described with reference to the accompanying drawings and examples, embodiments of which include, but are not limited to, the following examples.
Examples
As shown in fig. 1 to 2, the degradable high-array flexible device for brain-computer interface mainly comprises a flexible substrate 1, a flexible conductive electrode 2, a supporting layer 3, an electrical insulation layer 4, a semiconductor layer 5, and an encapsulation layer in practical application. The organic electrochemical transistor array is used for collecting, amplifying and transmitting weak electroencephalogram signals.
Wherein the thickness of the flexible substrate is 10-20 mu m, and the flexible substrate is made of biodegradable polymers synthesized by an ester bond, such as polylactic acid, polycaprolactone, polyglycolide and the like, and can realize active degradation through hydrolysis reaction. Similarly, other chemically and enzymatically hydrolytically degradable moieties include amide, thioester, anhydride, carbonate, urea, carbamate, imide, and imine linkages, etc., which serve as sites on the polymer backbone for decomposition under biologically benign conditions. This example preferably uses polylactic acid-glycolic acid copolymer (PLGA) as the substrate, which is flexible and degradable.
The flexible conductive electrode has a thickness of 50-100nm, adopts a degradable metal or alloy material with good conductivity, electrochemical stability, biological safety, such as pure magnesium, magnesium calcium, magnesium strontium, magnesium zinc, magnesium lithium, magnesium tin, magnesium- (silicon, manganese, zirconium and silver), magnesium yttrium, magnesium zinc rare earth, magnesium neodymium zinc base alloy, magnesium- (gadolinium, lanthanum, cerium and dysprosium), iron base alloy, zinc base alloy, bulk amorphous alloy and the like, and can also adopt a doped conductive polymer, such as polypyrrole, polyaniline, poly (3, 4-ethylenedioxythiophene) and the like, wherein the conductivity of the doped conductive polymer is generally lower than that of the metal electrode. In the embodiment, a gold (Au) electrode is adopted, and is deposited on a flexible substrate in an evaporation mode, and then a patterned flexible conductive electrode is formed through photoetching.
The supporting layer has a thickness of 0.5-1 μm, is made of biodegradable organic insulating material, and is mainly used for preventing the electric insulating layer from dissolving the substrate according to the solvent characteristics of the substrate and the electric insulating layer. Polyvinyl alcohol (PVA) is preferred as the support layer in the present invention.
The thickness of the electric insulating layer is 1-2 mu m, and the electric insulating layer is made of polymer materials with high dielectric constant and good chemical stability, such as glucose, lactose and other sugar natural dielectrics, the dielectric constants at 1kHz are 6.35 and 6.55 respectively, and the breakdown voltages are 1.5MV/cm and 4.5MV/cm respectively. The saccharide can be used for effectively preparing a pore-free sealing film by using water or dimethyl sulfoxide as a solvent. Meanwhile, synthetic polymers such as poly (glycerol sebacate) can also be used as highly efficient degradable dielectric materials. In this embodiment, the electrically insulating layer is preferably a polylactic acid-glycolic acid copolymer, which is spin-coated on the supporting layer and then subjected to photolithography to form the patterned electrically insulating layer.
The semiconductor layer has a thickness of 100-200nm, and is made of a biosafety semiconductor material which has high carrier mobility, large unit volume capacitance and can sensitively respond to local potential change, such as poly (3-hexylthiophene, P3 HT), a donor-acceptor copolymer (for example, diketopyrrolopyrrole), or a P3HT derivative of a carboxylate substituent, and after being mixed with poly (butylene succinate), polylactic acid, poly (ester urea) and polyurethane in proper proportions, the semiconductor material has both the electrical property, mechanical flexibility and biodegradability of a semiconductor. The semiconductor material in this embodiment is preferably poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid (PEDOT: PSS).
Based on the above construction and materials, the preparation method of the degradable high-array flexible device for brain-computer interface of the invention comprises the following steps:
step 1, cleaning a glass substrate by adopting a detergent, deionized water, acetone and isopropanol, and then drying;
step 2, spin-coating biodegradable polymer material PLGA (20 wt.% dissolved in chloroform) on the glass substrate after the drying treatment, and then annealing to obtain a substrate with a flexible substrate;
step 3, placing the substrate with the flexible substrate into a vacuum evaporation chamber, evaporating a layer of Au serving as a conductive electrode layer on the flexible substrate, performing patterning photoetching treatment (comprising spin-coating AZ5214 photoresist, sequentially performing exposure, development, plasma etching and photoresist removal) on the conductive electrode layer according to an organic electrochemical transistor array after cooling, and forming a flexible conductive electrode on the flexible substrate;
step 4, spin-coating an organic insulating material PVA (4 wt.%) on the patterned flexible conductive electrode and the corresponding flexible substrate, dissolving in water, and then annealing to form a supporting layer;
step 5, spin-coating a polymer material PVA (5 wt.% with good chemical stability) with high dielectric constant and good chemical stability on the supporting layer to form an electric insulating layer, performing patterning photoetching treatment (comprising spin-coating AZ5214 photoresist, sequentially performing exposure, development, plasma etching and photoresist removal) on the electric insulating layer according to an organic electrochemical transistor array after annealing treatment and cooling, and forming a patterned electric insulating layer (PVA/PLGA) on the supporting layer;
step 6, spin-coating semiconductor materials on the patterned electric insulation layer and the corresponding supporting layer to form a semiconductor layer, performing patterning photoetching treatment (comprising spin-coating AZ5214 photoresist, sequentially performing exposure, development, plasma etching and photoresist removal) on the semiconductor layer according to the organic electrochemical transistor array after annealing treatment and cooling to form a patterned semiconductor layer (PEDOT: PSS);
and 7, soaking the treated whole body in deionized water for 1 hour, and peeling the device from the substrate from the edge of the flexible substrate to obtain the degradable high-array flexible device for the brain-computer interface.
Example 1
The embodiment provides a specific degradable high-array flexible Device, which may be called Device 1 (Device 1), and its structure is as follows from bottom to top:
PLGA(12μm)/Au(100nm)/PVA(500nm)/PLGA(1.5μm)/PEDOT:PSS(150nm)
the preparation method comprises the following steps:
step 1: cleaning a glass substrate by adopting a detergent, deionized water, acetone and isopropanol, and then drying;
step 2: spin-coating a degradable base material PLGA (20 wt.% (dissolved in chloroform) on the glass substrate after the drying treatment, and then performing an annealing treatment;
step 3: and placing the cooled substrate into a vacuum evaporation chamber, and evaporating a layer of Au serving as a conductive electrode on the substrate. After cooling, spin-coating AZ5214 photoresist, and then sequentially performing exposure, development, wet etching and photoresist removal to obtain a patterned Au electrode;
step 4: PVA (4 wt.%) is spin coated on Au electrode, dissolved in water, and then annealed;
step 5: the insulating layer PVA (5 wt.%, dissolved in chloroform) was spin-coated on PVA and then annealed. After cooling, spin-coating AZ5214 photoresist, and then sequentially performing exposure, development, plasma etching and photoresist removal to obtain patterned PVA/PLGA;
step 6: on the basis of the above step, PEDOT was spin-coated with PSS mixed solvent (2 mL of 3, 4-ethylenedioxythiophene, 0.5wt.% of ethylene glycol, 0.01wt.% of dodecylbenzenesulfonic acid, 0.1wt.% of 3- (2, 3-glycidoxy) propyltrimethoxysilane) as a semiconductor layer, followed by annealing treatment for 1 hour. And (3) spin-coating AZ5214 photoresist after cooling, and then sequentially performing exposure, development, plasma etching and photoresist removal to obtain the patterned PEDOT: PSS.
Step 7: the device was immersed in deionized water for 1 hour and peeled off from the edge to obtain a complete device.
The device 1 thus obtained was subjected to a test, and the test results are shown in fig. 3 (a) to (d).
Example 2
The embodiment provides a specific degradable high-array flexible Device, which may be called Device 2 (Device 2), and its structure is as follows from bottom to top:
PLGA(12μm)/Au(100nm)/PVA(500nm)/PLGA(1.5μm)/gDpp-g2T(150nm)
the preparation method comprises the following steps:
step 1: cleaning a glass substrate by adopting a detergent, deionized water, acetone and isopropanol, and then drying;
step 2: spin-coating a degradable base material PLGA (20 wt.% (dissolved in chloroform) on the glass substrate after the drying treatment, and then performing an annealing treatment;
step 3: and placing the cooled substrate into a vacuum evaporation chamber, and evaporating a layer of Au serving as a conductive electrode on the substrate. After cooling, spin-coating AZ5214 photoresist, and then sequentially performing exposure, development, wet etching and photoresist removal to obtain a patterned Au electrode;
step 4: PVA (4 wt.%) is spin coated on Au electrode, dissolved in water, and then annealed;
step 5: the insulating layer PVA (5 wt.%, dissolved in chloroform) was spin-coated on PVA and then annealed.
Step 6: spin coating PVA (4 wt.%) on Au electrode, then annealing treatment, spin coating AZ5214 photoresist after cooling, then exposing, developing, plasma etching, photoresist removing, then obtaining patterned PVA/PLGA/PVA;
step 7: on the basis of the above step, gppp-g 2T (8 mg/ml, dissolved in chloroform) was spin-coated as a semiconductor layer, followed by annealing treatment for 1 hour. And (3) spin-coating AZ5214 photoresist after cooling, and then sequentially performing exposure, development, plasma etching and photoresist removal to obtain the patterned gDpp-g2T.
Step 8: the device was immersed in deionized water for 1 hour and peeled off from the edge to obtain a complete device.
The device 2 thus obtained was subjected to a test, and the test results are shown in fig. 4 (a) to (d).
According to the test results, the degradable high-array flexible device prepared by the invention has excellent performance and is suitable for application in electroencephalogram signal monitoring.
The above embodiments are only preferred embodiments of the present invention, and not intended to limit the scope of the present invention, but all changes made by adopting the design principle of the present invention and performing non-creative work on the basis thereof shall fall within the scope of the present invention.
Claims (10)
1. A degradable high-array flexible device for brain-computer interfaces, comprising
A flexible substrate made of a biodegradable polymer synthesized from one ester bond;
the flexible conductive electrode is prepared by patterning and photoetching a metal or alloy material which has good conductivity, electrochemical stability and biological safety and can be degraded on the flexible substrate according to an organic electrochemical transistor array;
the support layer is prepared by coating a biodegradable organic insulating material on the flexible substrate and the flexible conductive electrode and is used for preventing the flexible substrate from being dissolved by the electric insulating layer;
the electric insulating layer is made of polymer materials with high dielectric constant and good chemical stability by patterning and photoetching on the supporting layer according to an organic electrochemical transistor array;
the semiconductor layer is made of a biosafety semiconductor material which has high carrier mobility, large unit volume capacitance and can sensitively respond to local potential change by patterning and photoetching on the electric insulation layer according to an organic electrochemical transistor array;
the organic electrochemical transistor array is used for collecting, amplifying and transmitting weak electroencephalogram signals.
2. The degradable high array flexible device for brain-computer interfaces according to claim 1, wherein the thickness of the flexible substrate is 10-20 μm, the thickness of the flexible conductive electrode is 50-100nm, the thickness of the supporting layer is 0.5-1 μm, the thickness of the electrically insulating layer is 1-2 μm, and the thickness of the semiconductor layer is 100-200nm.
3. The degradable high array flexible device for brain-computer interfaces of claim 1, wherein the flexible substrate is one of polylactic acid-glycolic acid copolymer, polycaprolactone, polyglycolide.
4. The degradable high array flexible device for brain-computer interfaces of claim 1, wherein the flexible conductive electrode is at least one of pure magnesium, magnesium calcium, magnesium strontium, magnesium zinc, magnesium lithium, magnesium tin, magnesium- (silicon, manganese, zirconium, silver), magnesium yttrium, magnesium zinc rare earth, magnesium neodymium zinc based alloy, magnesium- (gadolinium, lanthanum, cerium, dysprosium), iron based alloy, zinc based alloy, bulk amorphous alloy, doped conductive polymer.
5. The degradable high array flexible device for brain-computer interfaces of claim 1, wherein the support layer is polyvinyl alcohol.
6. The degradable high array flexible device for brain-computer interfaces of claim 1, wherein the electrically insulating layer is one of a saccharide natural dielectric or a synthetic polymer.
7. The degradable high array flexible device for brain-computer interfaces of claim 1, wherein the semiconductor layer is one of poly (3-hexylthiophene), donor-acceptor copolymer, P3HT derivatives mixed with poly (butylene succinate), polylactic acid, poly (ester urea), carboxylate substituents of polyurethane.
8. A method of manufacturing a degradable high array flexible device for brain-computer interfaces according to any one of claims 1 to 7, comprising the steps of:
step 1, drying a cleaned substrate;
step 2, spin-coating a biodegradable polymer material on the substrate after the drying treatment, and then annealing to obtain the substrate with the flexible base;
step 3, placing the substrate with the flexible substrate into a vacuum evaporation chamber, evaporating a conductive electrode layer on the flexible substrate, cooling, and performing patterning photoetching treatment on the conductive electrode layer according to the organic electrochemical transistor array to form a flexible conductive electrode on the flexible substrate;
step 4, spin-coating an organic insulating material on the patterned flexible conductive electrode and the corresponding flexible substrate, and then annealing to form a supporting layer;
step 5, spin coating a polymer material with high dielectric constant and good chemical stability on the supporting layer to form an electric insulating layer, carrying out patterning photoetching treatment on the electric insulating layer according to the organic electrochemical transistor array after annealing treatment and cooling, and forming a patterned electric insulating layer on the supporting layer;
step 6, spin coating semiconductor materials on the patterned electric insulating layer and the corresponding supporting layer to form a semiconductor layer, and performing patterning photoetching treatment on the semiconductor layer according to the organic electrochemical transistor array after annealing treatment and cooling to form a patterned semiconductor layer;
and 7, soaking the treated whole body in deionized water, and peeling the device from the substrate from the edge of the flexible substrate to obtain the degradable high-array flexible device for the brain-computer interface.
9. The method for manufacturing a degradable high-array flexible device for brain-computer interface according to claim 8, wherein the patterning lithography process in the steps 3, 5 and 6 is:
spin-coating photoresist on the cooled layer, and sequentially exposing, developing, plasma etching and photoresist removing to obtain the patterned flexible conductive electrode, electrically insulating layer or semiconductor layer.
10. The method for manufacturing a degradable high-array flexible device for brain-computer interfaces according to claim 8, wherein the flexible substrate is made of PLGA material, the flexible conductive electrode is made of gold material, the supporting layer is made of PVA material, the electric insulating layer is made of PVA material, and the semiconductor layer is made of PEDOT: PSS material.
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