CN114262880B - Method for automatically regulating and controlling deposition film thickness of LPCVD furnace tube - Google Patents
Method for automatically regulating and controlling deposition film thickness of LPCVD furnace tube Download PDFInfo
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Abstract
A method for automatically regulating and controlling deposition film thickness of an LPCVD furnace tube comprises the following steps: providing an LPCVD furnace tube, arranging thermocouples and monitoring pieces, and dividing a placement area into control areas by each monitoring piece; filling unpatterned wafers in each control area, and performing corresponding process test operation; measuring the deposited film thickness of each monitoring sheet and feeding back to the regulation system; the regulation and control system executes regulation of operation time and temperature according to the difference between the measured thickness and the target thickness and takes the operation time and the temperature as reference time and temperature; during running, the Lot number, the Lot positions, the wafer number and the patterning density are sent to a regulation and control system, the average patterning density of each area is calculated and obtained, and then the thickness of each monitoring sheet to be compensated is calculated and obtained; the regulation and control system calculates the time and temperature to be compensated according to the compensation thickness, and further calculates the deposition time and temperature of the current batch on the basis of the reference time and temperature; and the regulating and controlling system assigns the regulated deposition time and temperature to the corresponding PPID execution operation of the machine. The invention can realize the automatic adjustment and control of the thickness of the deposited film by the LPCVD furnace tube.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for automatically regulating and controlling deposition film thickness of an LPCVD furnace tube.
Background
As is known, for Low Pressure chemical deposition (LPCVD), the thickness of a deposited film on the wafer surface is affected by the density of crystal plane patterning in addition to the temperature, gas flow, and Pressure of the furnace. The greater the patterning density of the wafer, the greater its surface area, and the more gas consumed to deposit the film.
For an LPCVD vertical furnace, a number of wafers are placed on a support (boat) with a fixed pitch from top to bottom into a reaction chamber (Tube) to perform a deposition reaction. During the deposition reaction, the reaction gas flows from bottom to top in the reaction chamber. The product with high patterning density is placed at the lower end, more reaction gas is consumed, the reaction gas flowing to the upper end is reduced, and the thickness of the deposited wafer at the upper end is thinner; on the contrary, the lower end of the wafer is provided with a product with low patterning density, which can cause the thickness of the deposited film of the upper wafer to be thicker.
Obviously, because of the diversity of products and processes in the FAB, the patterning density is also greatly different, and each operation batch contains products with different patterning densities, so that the film thickness deposited by the products is greatly different, and the stability of the product yield is affected.
It is one of the technical problems to be solved by those skilled in the art to find a method for automatically controlling the deposition film thickness of an LPCVD furnace tube according to different patterning densities.
Therefore, in order to solve the problems in the prior art, the designer actively researches and improves the film thickness by virtue of years of experience in the industry, and the method for automatically regulating and controlling the deposition film thickness of the LPCVD furnace tube is provided.
Disclosure of Invention
The invention provides a method for automatically regulating and controlling the deposition film thickness of an LPCVD furnace tube, aiming at the defects that in the prior art, products in FAB and manufacturing processes have great diversity and patterning density, each operation batch contains products with different patterning densities, so that the film thickness deposited by the products has great diversity, the stability of the product yield is affected, and the like.
In order to achieve the purpose of the invention, the invention provides a method for automatically regulating and controlling the deposition film thickness of an LPCVD furnace tube, which comprises the following steps:
step S1 is executed: providing an LPCVD furnace tube, wherein a first TC1 thermocouple, a second TC2 thermocouple, a third TC3 thermocouple, a fourth TC4 thermocouple and a fifth TC5 thermocouple are respectively arranged at the top, the middle upper part, the middle lower part and the bottom of a reaction cavity of the LPCVD furnace tube, a first M1 monitoring sheet, a second M2 monitoring sheet, a third M3 monitoring sheet, a fourth M4 monitoring sheet and a fifth M5 monitoring sheet are respectively arranged at the top, the middle upper part, the middle lower part and the bottom of a product placement area of the LPCVD furnace tube, and the first M1 monitoring sheet, the second M2 monitoring sheet, the third M3 monitoring sheet, the fourth M4 monitoring sheet and the fifth M5 monitoring sheet which are arranged at intervals divide the product placement area into a first Z1 control area, a second Z2 control area, a third Z3 control area and a fourth Z4 control area from top to bottom;
step S2 is executed: filling unpatterned wafers in the first Z1 control area, the second Z2 control area, the third Z3 control area and the fourth Z4 control area, and performing test operation of corresponding processes;
step S3 is executed: measuring the thickness of the deposited film of the first M1 monitoring sheet, the second M2 monitoring sheet, the third M3 monitoring sheet, the fourth M4 monitoring sheet and the fifth M5 monitoring sheet, and feeding back to the regulation and control system;
step S4 is executed: the regulation and control system executes regulation of the operation time and the temperature according to the difference between the measured thickness of the deposited film and the target thickness, and takes the regulated time and temperature as the reference time temperature;
step S5 is executed: when the LPCVD furnace tube machine runs, the number of the wafer unit products (Lot), the positions of the product placement areas where the wafer unit products (Lot) are positioned and the wafer number and the wafer patterning density are sent to a regulating and controlling system, and the regulating and controlling system calculates and obtains the average patterning density of each area, and further calculates and obtains the thickness of the deposited film to be compensated by each monitoring sheet through the average patterning density of different areas;
step S6 is executed: the regulating and controlling system executes the regulation of the operation time and the temperature on the basis of the reference time and the temperature according to the thickness of the compensated deposited film, and the regulating mode is consistent with the regulating mode of the step S4;
step S7 is executed: the control system assigns the adjusted deposition time and temperature to the corresponding PPID of the LPCVD furnace to execute operation.
Optionally, the measurement thicknesses of the deposited films of the first M1 monitor sheet, the second M2 monitor sheet, the third M3 monitor sheet, the fourth M4 monitor sheet, and the fifth M5 monitor sheet are TK1, TK2, TK3, TK4, and TK5, respectively, and the target thicknesses of the deposited films are TG1, TG2, TG3, TG4, and TG5, respectively, and the adjustment thicknesses of the deposited films are Δtk, respectively 1 ＝TK 1 -TG 1 ，ΔTK 2 ＝TK 2 -TG 2 ΔTK 3 ＝TK 3 -TG 3 ΔTK 4 ＝TK 4 -TG 4 ΔTK 5 ＝TK 5 -TG 5 Calculation of the mobilization time is Δtime=Δtk 3 /S time The reference time after the mobilization is as follows, reference time=preset time+Δtime, where S time The unit is A/min, which is the linear relationship between the working time and the film thickness.
Alternatively, after preliminary adjustment of the passing time, the thickness of the deposited film of each segment to be temperature-adjusted is as follows,
ΔTK 1 '＝ΔTK 1 -Δtime×S time ，ΔTK 2 '＝ΔTK 2 -Δtime×S time ΔTK 3 '＝ΔTK 3 -Δtime×S time ，ΔTK 4 '＝ΔTK 4 -Δtime×S time ΔTK 5 '＝ΔTK 5 -Δtime×S time 。
alternatively, the temperatures to be adjusted for each segment are as follows,
ΔTemp 1 ＝A 11 ×ΔTK 1 '/S temp +A 12× ΔTK 2 '/S temp ，
ΔTemp 2 ＝A 21 ×ΔTK 1 '/S temp +A 22 ×ΔTK 2 '/S temp +A 23 ×ΔTK 3 '/S temp ，
ΔTemp 3 ＝A 32 ×ΔTK 2 '/S temp +A 33 ×ΔTK 3 '/S temp +A 34 ×ΔTK 4 '/S temp ，
ΔTemp 4 ＝A 43 ×ΔTK 3 '/S temp +A 44 ×ΔTK 4 '/S temp +A 45 ×ΔTK 5 '/S temp ，
ΔTemp 5 ＝A 54 ×ΔTK 4 '/S temp +A 55 ×ΔTK 5 '/S temp ；
wherein S is temp The unit is A/. Degree.C, which is the linear relation between the operation temperature and the film thickness;
A 11 is the influence coefficient of TC1 temperature and M1 thickness;
A 12 is the influence coefficient of TC1 temperature and M2 thickness;
A 21 is the influence coefficient of TC2 temperature and M1 thickness;
A 22 is the influence coefficient of TC2 temperature and M2 thickness;
A 23 is the influence coefficient of TC2 temperature and M3 thickness;
A 32 is the influence coefficient of TC3 temperature and M2 thickness;
A 33 is the influence coefficient of TC3 temperature and M3 thickness;
A 34 is the influence coefficient of TC3 temperature and M4 thickness;
A 43 is the influence coefficient of TC4 temperature and M3 thickness;
A 44 is the influence coefficient of TC4 temperature and M4 thickness;
A 45 is the influence coefficient of TC4 temperature and M5 thickness;
A 54 is the influence coefficient of TC5 temperature and M4 thickness;
A 55 is the influence coefficient of TC5 temperature and M5 thickness.
Alternatively, the coefficients are obtained by the relation between the actual film thickness collected by run and the reaction time and temperature.
Alternatively, the adjusted reference temperature is set as follows,
reference temperature Temp 1 =preset temperature+Δtemp 1
Reference temperature Temp 2 =preset temperature+Δtemp 2
Reference temperature Temp 3 =preset temperature+Δtemp 3
Reference temperature Temp 4 =preset temperature+Δtemp 4
Reference temperature Temp 5 =preset temperature+Δtemp 5
Optionally, the compensation thickness of each segment of the monitor sheet in step S5 is as follows,
ΔTK″ 1 ＝(PD 1 ×C 11 +PD 2 ×C 21 +PD 3 ×C 31 +PD 4 ×C 41 )×Y 1 ，
ΔTK″ 2 ＝(PD 1 ×C 12 +PD 2 ×C 22 +PD 3 ×C 32 +PD 4 ×C 42 )×Y 2 ，
ΔTK″ 3 ＝(PD 2 ×C 23 +PD 3 ×C 33 +PD 4 ×C 43 )×Y 3 ，
ΔTK″ 4 ＝(PD 3 ×C 34 +PD 4 ×C 44 )×Y 4 ，
ΔTK″ 5 ＝PD 4 ×Y 5 ，
wherein C is 11 +C 21 +C 31 +C 41 ＝1，C 12 +C 22 +C 32 +C 42 ＝1，C 23 +C 33 +C 43 ＝1，C 34 +C 44 ＝1；
0≤C nn ≤1，n＝1，2,3,4；
In the formula PD 1 An average patterning density for the first Z1 control zone;
PD 2 an average patterning density for the second Z2 control region;
PD 3 an average patterning density for the third Z3 control zone;
PD 4 an average patterning density for the fourth Z4 control region;
C 11 an influence coefficient of the average patterning density of the first Z1 control region on the thickness of M1;
C 21 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M1;
C 31 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M1;
C 41 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M1;
C 12 an influence coefficient of the average patterning density of the first Z1 control region on the thickness of M2;
C 22 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M2;
C 32 is the third oneThe influence coefficient of the average patterning density of the Z3 control region on the thickness of M2;
C 42 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M2;
C 23 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M3;
C 33 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M3;
C 43 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M3;
C 34 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M4;
C 44 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M4;
Y 1 ，Y 2 ，Y 3 ，Y 4 the linear relationship between the patterning density and the thickness of the deposited film, respectively.
Alternatively, the average patterning density of each control region may be represented by a net opening rate of the corresponding mask plate, and the value range is 0-100%.
Alternatively, the coefficients are each obtained by running the actual film thickness collected versus the patterned density. Optionally, the regulation system further calculates the operation time and temperature required by the current batch based on the reference time and temperature according to the compensated thickness of the deposited film, and the regulation mode is consistent with the regulation mode of the operation time and temperature.
In summary, the method for automatically adjusting the deposition film thickness of the LPCVD furnace tube according to the invention calculates the time and temperature required to be adjusted as the reference time temperature through the adjustment thickness of each monitoring sheet, calculates the thickness required to be compensated of each monitoring sheet according to the patterning density of the product wafer, and then automatically calculates the time and temperature required to be adjusted according to the thickness required to be compensated, thereby realizing the automatic adjustment of the deposition film thickness of the LPCVD furnace tube.
Drawings
FIG. 1 is a schematic view of the LPCVD furnace and wafer arrangement of the present invention;
FIG. 2 is a flow chart of a method for automatically controlling the deposition film thickness of an LPCVD furnace according to the present invention;
FIG. 3 shows Y 1 A plot of the linear relationship between the patterned density and the thickness of the deposited film;
FIG. 4 shows Y 3 A graph of the linear relationship between the patterning density and the thickness of the deposited film.
Detailed Description
For a detailed description of the technical content, constructional features, achieved objects and effects of the present invention, the following detailed description will be given with reference to the accompanying drawings.
Referring to FIG. 1, FIG. 1 is a schematic diagram showing the LPCVD furnace and wafer arrangement of the present invention. The LPCVD furnace tube 1 is a vertical furnace tube, a first TC1 thermocouple 101, a second TC2 thermocouple 102, a third TC3 thermocouple 103, a fourth TC4 thermocouple 104, and a fifth TC5 thermocouple 105 are respectively disposed at the top, middle upper part, middle lower part, and bottom of the reaction chamber 10 of the LPCVD furnace tube 1, a first M1 monitor piece 21, a second M2 monitor piece 22, a third M3 monitor piece 23, a fourth M4 monitor piece 24, and a fifth M5 monitor piece 25 are respectively disposed at the top, middle upper part, middle lower part, and bottom of the product placement area of the LPCVD furnace tube 1, and the first M1 monitor piece 21, the second M2 monitor piece 22, the third M3 monitor piece 23, the fourth M4 monitor piece 24, and the fifth M5 monitor piece 25 are respectively disposed at the interval to divide the product placement area into a first Z1 control area 11, a second Z2 control area 12, a third Z3 control area 13, and a fourth Z4 control area 14 from top to bottom.
The first M1 monitor sheet 21, the second M2 monitor sheet 22, the third M3 monitor sheet 23, the fourth M4 monitor sheet 24, and the fifth M5 monitor sheet 25 are used for monitoring the thickness of the deposited film. The first TC1 thermocouple 101, the second TC2 thermocouple 102, the third TC3 thermocouple 103, the fourth TC4 thermocouple 104, and the fifth TC5 thermocouple 105 are used for adjusting a temperature field in the reaction chamber 10, thereby adjusting deposition rates of the first Z1 control region 11, the second Z2 control region 12, the third Z3 control region 13, and the fourth Z4 control region 14 in the reaction chamber 10.
During the test operation of the LPCVD furnace 1, the first Z1 control region 11, the second Z2 control region 12, the third Z3 control region 13 and the fourth Z4 control region 14 in the reaction chamber 10 are provided with unpatterned wafers. When the LPCVD furnace 1 runs, the first Z1 control area 11, the second Z2 control area 12, the third Z3 control area 13 and the fourth Z4 control area 14 are provided with patterned product wafers in the reaction chamber 10.
Referring to FIG. 2 in combination with FIG. 1, FIG. 2 is a flow chart of a method for automatically controlling the deposition film thickness of an LPCVD furnace according to the present invention. The method for automatically regulating and controlling the deposition film thickness of the LPCVD furnace tube comprises the following steps:
step S1 is executed: providing an LPCVD furnace tube, wherein a first TC1 thermocouple, a second TC2 thermocouple, a third TC3 thermocouple, a fourth TC4 thermocouple and a fifth TC5 thermocouple are respectively arranged at the top, the middle upper part, the middle lower part and the bottom of a reaction cavity of the LPCVD furnace tube, a first M1 monitoring sheet, a second M2 monitoring sheet, a third M3 monitoring sheet, a fourth M4 monitoring sheet and a fifth M5 monitoring sheet are respectively arranged at the top, the middle upper part, the middle lower part and the bottom of a product placement area of the LPCVD furnace tube, and the first M1 monitoring sheet, the second M2 monitoring sheet, the third M3 monitoring sheet, the fourth M4 monitoring sheet and the fifth M5 monitoring sheet which are arranged at intervals divide the product placement area into a first Z1 control area, a second Z2 control area, a third Z3 control area and a fourth Z4 control area from top to bottom;
step S2 is executed: filling unpatterned wafers in the first Z1 control area, the second Z2 control area, the third Z3 control area and the fourth Z4 control area, and performing test operation of corresponding processes;
step S3 is executed: measuring the thickness of the deposited film of the first M1 monitoring sheet, the second M2 monitoring sheet, the third M3 monitoring sheet, the fourth M4 monitoring sheet and the fifth M5 monitoring sheet, and feeding back to the regulation and control system;
step S4 is executed: the regulation and control system executes regulation of the operation time and the temperature according to the difference between the measured thickness of the deposited film and the target thickness, and takes the regulated time and temperature as the reference time temperature;
step S5 is executed: when the LPCVD furnace tube machine runs, the number of the wafer unit products (Lot), the positions of the product placement areas where the wafer unit products (Lot) are positioned and the wafer number and the wafer patterning density are sent to a regulating and controlling system, and the regulating and controlling system calculates and obtains the average patterning density of each area, and further calculates and obtains the thickness of the deposited film to be compensated by each monitoring sheet through the average patterning density of different areas;
step S6 is executed: the regulating and controlling system executes the regulation of the operation time and the temperature on the basis of the reference time and the temperature according to the thickness of the compensated deposited film, and the regulating mode is consistent with the regulating mode of the step S4;
step S7 is executed: the control system assigns the adjusted deposition time and temperature to the corresponding PPID of the LPCVD furnace to execute operation.
In order to more intuitively disclose the technical scheme of the invention and highlight the beneficial effects of the invention, the specific steps and the working principle of the method for automatically regulating and controlling the deposition film thickness of the LPCVD furnace tube are described with reference to specific embodiments. In the embodiment, the relationship between the actual thickness of the deposited film and the reaction time and temperature, the relationship between the actual thickness of the deposited film and the patterning density, and the like are all data collected during actual running, and specific numerical values are only listed and should not be considered as limiting the technical scheme of the invention.
In step S3, for example, the measured thicknesses of the deposited films of the first M1 monitor wafer, the second M2 monitor wafer, the third M3 monitor wafer, the fourth M4 monitor wafer, and the fifth M5 monitor wafer are TK1, TK2, TK3, TK4, and TK5, respectively, the target thicknesses of the deposited films are TG1, TG2, TG3, TG4, and TG5, respectively, and the adjusted thicknesses of the deposited films are Δtk, respectively 1 ＝TK 1 -TG 1 ，ΔTK 2 ＝TK 2 -TG 2 ，ΔTK 3 ＝TK 3 -TG 3 ，ΔTK 4 ＝TK 4 -TG 4 ，ΔTK 5 ＝TK 5 -TG 5 。
In the present invention, calculation of the maneuver time is defined as Δtime=Δtk 3 /S time The reference time after mobilization is as follows,
reference time=preset time+Δtime.
Wherein S is time The unit is A/min, which is the linear relationship between the working time and the film thickness.
After preliminary adjustment of the passing time, the thickness of the deposited film of each section required to be adjusted by temperature is as follows,
ΔTK 1 '＝ΔTK 1 -Δtime×S time ，
ΔTK 2 '＝ΔTK 2 -Δtime×S time ，
ΔTK 3 '＝ΔTK 3 -Δtime×S time ，
ΔTK 4 '＝ΔTK 4 -Δtime×S time ，
ΔTK 5 '＝ΔTK 5 -Δtime×S time 。
the temperature to be adjusted for each segment is as follows,
ΔTemp 1 ＝A 11 ×ΔTK 1 '/S temp +A 12 ×ΔTK 2 '/S temp ，
ΔTemp 2 ＝A 21 ×ΔTK 1 '/S temp +A 22 ×ΔTK 2 '/S temp +A 23 ×ΔTK 3 '/S temp ，
ΔTemp 3 ＝A 32 ×ΔTK 2 '/S temp +A 33 ×ΔTK 3 '/S temp +A 34 ×ΔTK 4 '/S temp ，
ΔTemp 4 ＝A 43 ×ΔTK 3 '/S temp +A 44 ×ΔTK 4 '/S temp +A 45 ×ΔTK 5 '/S temp ，
ΔTemp 5 ＝A 54 ×ΔTK 4 '/S temp +A 55 ×ΔTK 5 '/S temp 。
wherein S is temp The unit is A/. Degree.C, which is the linear relation between the operation temperature and the film thickness;
A 11 is the influence coefficient of TC1 temperature and M1 thickness;
A 12 is the influence coefficient of TC1 temperature and M2 thickness;
A 21 is the influence coefficient of TC2 temperature and M1 thickness;
A 22 is the influence coefficient of TC2 temperature and M2 thickness;
A 23 is the influence coefficient of TC2 temperature and M3 thickness;
A 32 is the influence coefficient of TC3 temperature and M2 thickness;
A 33 is the influence coefficient of TC3 temperature and M3 thickness;
A 34 is the influence coefficient of TC3 temperature and M4 thickness;
A 43 is the influence coefficient of TC4 temperature and M3 thickness;
A 44 is the influence coefficient of TC4 temperature and M4 thickness;
A 45 is the influence coefficient of TC4 temperature and M5 thickness;
A 54 is the influence coefficient of TC5 temperature and M4 thickness;
A 55 is the influence coefficient of TC5 temperature and M5 thickness.
The coefficients can be obtained through the relation between the actual film thickness collected by running goods and the reaction time and temperature. More specifically, for example, one of the PPID of the LPCVD furnace is used as an example, and the related parameter settings are shown in the following table.
The adjusted reference temperature is set as follows,
reference temperature Temp 1 =preset temperature+Δtemp 1 ，
Reference temperature Temp 2 =preset temperature+Δtemp 2 ，
Reference temperature Temp 3 =preset temperature+Δtemp 3 ，
Reference temperature Temp 4 =preset temperature+Δtemp 4 ，
Reference temperature Temp 5 =preset temperature+ΔTemp 5 。
In step S5 and step S6, the machine of the LPCVD furnace tube performs the running, and the number of wafer unit products (Lot), the position of the product placement area where the wafer unit products (Lot) are located, the number of wafers and the wafer patterning density are sent to a control system, the control system calculates to obtain the average patterning density of each area, and further calculates to obtain the thickness of the deposited film to be compensated for each monitor sheet through the average patterning density of different areas, and the control system further performs the adjustment of the operation time and the temperature according to the difference between the thickness of the compensated deposited film and the target thickness. The compensation thickness of each segment of the monitor sheet is as follows,
ΔTK″ 1 ＝(PD 1 ×C 11 +PD 2 ×C 21 +PD 3 ×C 31 +PD 4 ×C 41 )×Y 1 ，
ΔTK″ 2 ＝(PD 1 ×C 12 +PD 2 ×C 22 +PD 3 ×C 32 +PD 4 ×C 42 )×Y 2 ，
ΔTK″ 3 ＝(PD 2 ×C 23 +PD 3 ×C 33 +PD 4 ×C 43 )×Y 3 ，
ΔTK″ 4 ＝(PD 3 ×C 34 +PD 4 ×C 44 )×Y 4 ，
ΔTK″ 5 ＝PD 4 ×Y 5 。
wherein C is 11 +C 21 +C 31 +C 41 ＝1，C 12 +C 22 +C 32 +C 42 ＝1，C 23 +C 33 +C 43 ＝1，C 34 +C 44 ＝1；
0≤C nn ≤1n＝1，2,3,4
In the formula PD 1 An average patterning density for the first Z1 control zone;
PD 2 an average patterning density for the second Z2 control region;
PD 3 an average patterning density for the third Z3 control zone;
PD 4 an average patterning density for the fourth Z4 control region;
C 11 an influence coefficient of the average patterning density of the first Z1 control region on the thickness of M1;
C 21 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M1;
C 31 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M1;
C 41 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M1;
C 12 an influence coefficient of the average patterning density of the first Z1 control region on the thickness of M2;
C 22 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M2;
C 32 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M2;
C 42 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M2;
C 23 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M3;
C 33 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M3;
C 43 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M3;
C 34 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M4;
C 44 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M4;
Y 1 ，Y 2 ，Y 3 ，Y 4 the linear relationship between the patterning density and the thickness of the deposited film, respectively.
As one skilled in the art will readily appreciate, the average patterning density of each control region may be expressed in terms of a net opening ratio (clearation) of the corresponding mask (mask) in a range of 0 to 100%.
In addition, the coefficients can be obtained by the relation between the actual film thickness collected by running and the patterning density. More specifically, for example, one of the PPID of the LPCVD furnace is used as an example, see the following table, and referring to FIG. 3, FIG. 3 shows Y 1 A graph of the linear relationship between the patterning density and the thickness of the deposited film. Selection of C by actual run data 41 ，C 31 ，C 21 ，C 11 And can obtain Y 1 Is set to 1.346.
| C 41 | C 31 | C 21 | C 11 |
| 0.05 | 0.1 | 0.2 | 0.65 |
See the following table, in combination with reference to FIG. 4, FIG. 4 shows Y 3 A graph of the linear relationship between the patterning density and the thickness of the deposited film. Selection of C by actual run data 43 ，C 33 ，C 23 And can obtain Y 3 Is set to 1.679. Similarly, available Y 2 ，Y 4 ，Y 5 Is set up by the above-mentioned equipment.
| C 43 | C 33 | C 23 |
| 0.15 | 0.65 | 0.2 |
In step S6, the control system calculates and obtains the thickness of the deposited film to be compensated of each section according to the difference of the patterning density of the product wafer, and executes the adjustment of the operation time and the temperature on the basis of the reference time and the temperature according to the thickness of the deposited film to be compensated, wherein the adjustment mode is consistent with the step S4.
Obviously, the method for automatically regulating the deposition film thickness of the LPCVD furnace tube calculates and obtains the time and the temperature required to be regulated as the reference time temperature through the regulating thickness of each monitoring sheet, calculates and obtains the thickness required to be compensated of each monitoring sheet according to the patterning density of the product wafer, and further automatically calculates the time and the temperature required to be regulated according to the thickness required to be compensated, thereby realizing the automatic regulation of the deposition film thickness of the LPCVD furnace tube.
In summary, the method for automatically adjusting the deposition film thickness of the LPCVD furnace tube according to the invention calculates the time and temperature required to be adjusted as the reference time temperature through the adjustment thickness of each monitoring sheet, calculates the thickness required to be compensated of each monitoring sheet according to the patterning density of the product wafer, and then automatically calculates the time and temperature required to be adjusted according to the thickness required to be compensated, thereby realizing the automatic adjustment of the deposition film thickness of the LPCVD furnace tube.
It will be appreciated by those skilled in the art that various modifications and variations can be made to the invention without departing from the spirit or scope of the invention. Accordingly, the present invention is deemed to cover any modifications and variations, if they fall within the scope of the appended claims and their equivalents.
Claims (8)
1. The method for automatically regulating and controlling the deposition film thickness of the LPCVD furnace tube is characterized by comprising the following steps of:
step S1 is executed: providing an LPCVD furnace tube, wherein a first TC1 thermocouple, a second TC2 thermocouple, a third TC3 thermocouple, a fourth TC4 thermocouple and a fifth TC5 thermocouple are respectively arranged at the top, the middle upper part, the middle lower part and the bottom of a reaction cavity of the LPCVD furnace tube, a first M1 monitoring sheet, a second M2 monitoring sheet, a third M3 monitoring sheet, a fourth M4 monitoring sheet and a fifth M5 monitoring sheet are respectively arranged at the top, the middle upper part, the middle lower part and the bottom of a product placement area of the LPCVD furnace tube, and the product placement area is divided into a first Z1 control area, a second Z2 control area, a third Z3 control area and a fourth Z4 control area from top to bottom by the first M1 monitoring sheet, the second M2 monitoring sheet, the third M3 monitoring sheet, the fourth M4 monitoring sheet and the fourth M5 monitoring sheet which are arranged at intervals;
step S2 is executed: filling unpatterned wafers in the first Z1 control area, the second Z2 control area, the third Z3 control area and the fourth Z4 control area, and performing test operation of corresponding processes;
step S3 is executed: measuring the thickness of the deposited film of the first M1 monitoring sheet, the second M2 monitoring sheet, the third M3 monitoring sheet, the fourth M4 monitoring sheet and the fifth M5 monitoring sheet, and feeding back to the regulation and control system;
step S4 is executed: the regulation and control system executes regulation of the operation time and the temperature according to the difference between the measured thickness of the deposited film and the target thickness, and takes the regulated time and temperature as the reference time temperature;
step S5 is executed: when the LPCVD furnace tube machine runs, the number of the wafer unit products (Lot), the positions of the product placement areas where the wafer unit products (Lot) are positioned and the wafer number and the wafer patterning density are sent to a regulating and controlling system, and the regulating and controlling system calculates and obtains the average patterning density of each area, and further calculates and obtains the thickness of the deposited film to be compensated by each monitoring sheet through the average patterning density of different areas;
step S6 is executed: the regulating and controlling system executes the regulation of the operation time and the temperature on the basis of the reference time and the temperature according to the thickness of the compensated deposited film, and the regulating mode is consistent with that of the step S4;
step S7 is executed: the regulation and control system assigns the regulated deposition time and temperature to corresponding PPID execution operation of a machine of the LPCVD furnace tube;
wherein, the compensation thickness of each section of monitoring sheet in the step S5 is as follows,
ΔTK″ 1 ＝(PD 1 ×C 11 +PD 2 ×C 21 +PD 3 ×C 31 +PD 4 ×C 41 )×Y 1 ，
ΔTK″ 2 ＝(PD 1 ×C 12 +PD 2 ×C 22 +PD 3 ×C 32 +PD 4 ×C 42 )×Y 2 ，
ΔTK″ 3 ＝(PD 2 ×C 23 +PD 3 ×C 33 +PD 4 ×C 43 )×Y 3 ，
ΔTK″ 4 ＝(PD 3 ×C 34 +PD 4 ×C 44 )×Y 4 ，
ΔTK″ 5 ＝PD 4 ×Y 5 ，
wherein C is 11 +C 21 +C 31 +C 41 ＝1，C 12 +C 22 +C 32 +C 42 ＝1，C 23 +C 33 +C 43 ＝1，C 34 +C 44 ＝1；0≤C nn ≤1，n＝1，2,3,4；
In the formula PD 1 An average patterning density for the first Z1 control zone;
PD 2 an average patterning density for the second Z2 control region;
PD 3 an average patterning density for the third Z3 control zone;
PD 4 an average patterning density for the fourth Z4 control region;
C 11 an influence coefficient of the average patterning density of the first Z1 control region on the thickness of M1;
C 21 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M1;
C 31 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M1;
C 41 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M1;
C 12 an influence coefficient of the average patterning density of the first Z1 control region on the thickness of M2;
C 22 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M2;
C 32 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M2;
C 42 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M2;
C 23 an influence coefficient of the average patterning density of the second Z2 control region on the thickness of M3;
C 33 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M3;
C 43 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M3;
C 34 an influence coefficient of the average patterning density of the third Z3 control region on the thickness of M4;
C 44 an influence coefficient of the average patterning density of the fourth Z4 control region on the thickness of M4;
Y 1 ，Y 2 ，Y 3 ，Y 4 ，Y 5 the linear relationship between the patterning density and the thickness of the deposited film, respectively.
2. The method of automatically controlling deposited film thickness in LPCVD furnace tube according to claim 1, wherein the measured thicknesses of the deposited films of the first M1 monitor wafer, the second M2 monitor wafer, the third M3 monitor wafer, the fourth M4 monitor wafer, and the fifth M5 monitor wafer are TK1, TK2, respectively,TK3, TK4 and TK5, wherein the target thicknesses of the deposition films are TG1, TG2, TG3, TG4 and TG5 respectively, and the adjustment thicknesses of the deposition films are delta TK respectively 1 ＝TK 1 -TG 1 ，ΔTK 2 ＝TK 2 -TG 2 ，ΔTK 3 ＝TK 3 -TG 3 ，ΔTK 4 ＝TK 4 -TG 4 ，ΔTK 5 ＝TK 5 -TG 5 Calculation defining the mobilization time is Δtime=Δtk 3 /S time The reference time after mobilization is as follows, reference time=preset time+Δtime; wherein S is time The unit is A/min, which is the linear relation between the working time and the film thickness.
3. The method for automatically controlling the thickness of a deposited film by an LPCVD furnace tube according to claim 2, wherein the thickness of the deposited film to be subjected to temperature adjustment in each stage after preliminary adjustment by time is as follows, deltaTK 1 '＝ΔTK 1 -Δtime×S time ，ΔTK 2 '＝ΔTK 2 -Δtime×S time ，ΔTK 3 '＝ΔTK 3 -Δtime×S time ，ΔTK 4 '＝ΔTK 4 -Δtime×S time ，ΔTK 5 '＝ΔTK 5 -Δtime×S time 。
4. The method for automatically controlling the deposition film thickness of an LPCVD furnace tube according to claim 3, wherein the temperature to be adjusted in each section is as follows,
ΔTemp 1 ＝A 11 ×ΔTK 1 '/S temp +A 12 ×ΔTK 2 '/S temp ，
ΔTemp 2 ＝A 21 ×ΔTK 1 '/S temp +A 22 ×ΔTK 2 '/S temp +A 23 ×ΔTK 3 '/S temp ，
ΔTemp 3 ＝A 32 ×ΔTK 2 '/S temp +A 33 ×ΔTK 3 '/S temp +A 34 ×ΔTK 4 '/S temp ，
ΔTemp 4 ＝A 43 ×ΔTK 3 '/S temp +A 44 ×ΔTK 4 '/S temp +A 45 ×ΔTK 5 '/S temp ，
ΔTemp 5 ＝A 54 ×ΔTK 4 '/S temp +A 55 ×ΔTK 5 '/S temp ；
wherein S is temp The unit is A/. Degree.C, which is the linear relation between the operation temperature and the film thickness;
A 11 is the influence coefficient of TC1 temperature and M1 thickness;
A 12 is the influence coefficient of TC1 temperature and M2 thickness;
A 21 is the influence coefficient of TC2 temperature and M1 thickness;
A 22 is the influence coefficient of TC2 temperature and M2 thickness;
A 23 is the influence coefficient of TC2 temperature and M3 thickness;
A 32 is the influence coefficient of TC3 temperature and M2 thickness;
A 33 is the influence coefficient of TC3 temperature and M3 thickness;
A 34 is the influence coefficient of TC3 temperature and M4 thickness;
A 43 is the influence coefficient of TC4 temperature and M3 thickness;
A 44 is the influence coefficient of TC4 temperature and M4 thickness;
A 45 is the influence coefficient of TC4 temperature and M5 thickness;
A 54 is the influence coefficient of TC5 temperature and M4 thickness;
A 55 is the influence coefficient of TC5 temperature and M5 thickness.
5. The method for automatically controlling deposition film thickness in LPCVD furnace tube according to claim 4, wherein the coefficient A 11 、A 12 、A 21 、A 22 、A 23 、A 32 、A 33 、A 34 、A 43 、A 44 、A 45 、A 54 、A 55 The relation between the actual film thickness and the temperature is obtained through running and collecting.
6. The method for automatically controlling a deposition film thickness in an LPCVD furnace tube according to claim 4, wherein the adjusted reference temperature is set as follows,
reference temperature Temp 1 =preset temperature+Δtemp 1 ，
Reference temperature Temp 2 =preset temperature+Δtemp 2 ，
Reference temperature Temp 3 =preset temperature+Δtemp 3 ，
Reference temperature Temp 4 =preset temperature+Δtemp 4 ，
Reference temperature Temp 5 =preset temperature+Δtemp 5 。
7. The method for automatically controlling the deposition film thickness of an LPCVD furnace tube according to claim 6, wherein the average patterning density of each control region is represented by a net opening rate of the corresponding mask plate, and the value range is 0 to 100%.
8. The method for automatically controlling the deposition film thickness of an LPCVD furnace according to claim 1, wherein the coefficients are obtained by the relation between the actual film thickness collected by run and the patterning density.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000025932A (en) * | 1998-10-15 | 2000-05-06 | 윤종용 | Deposition device having thickness monitoring function and method thereof |
| JP2001007174A (en) * | 1999-06-17 | 2001-01-12 | Nikon Corp | Method and device for measuring pattern density, film- thickness measuring method, and process control method |
| US6211094B1 (en) * | 1998-09-15 | 2001-04-03 | Samsung Electronics Co., Ltd. | Thickness control method in fabrication of thin-film layers in semiconductor devices |
| KR20060074578A (en) * | 2004-12-27 | 2006-07-03 | 동부일렉트로닉스 주식회사 | Apparatus for measuring thickness of wafer and method therefor |
| CN105336646A (en) * | 2014-08-15 | 2016-02-17 | 力晶科技股份有限公司 | Process control method and process control system |
| CN112038233A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for reducing load effect of different products in furnace tube |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6739386B2 (en) * | 2017-03-28 | 2020-08-12 | 東京エレクトロン株式会社 | Substrate processing system, control device, film forming method and program |
-
2021
- 2021-12-16 CN CN202111545317.XA patent/CN114262880B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6211094B1 (en) * | 1998-09-15 | 2001-04-03 | Samsung Electronics Co., Ltd. | Thickness control method in fabrication of thin-film layers in semiconductor devices |
| KR20000025932A (en) * | 1998-10-15 | 2000-05-06 | 윤종용 | Deposition device having thickness monitoring function and method thereof |
| JP2001007174A (en) * | 1999-06-17 | 2001-01-12 | Nikon Corp | Method and device for measuring pattern density, film- thickness measuring method, and process control method |
| KR20060074578A (en) * | 2004-12-27 | 2006-07-03 | 동부일렉트로닉스 주식회사 | Apparatus for measuring thickness of wafer and method therefor |
| CN105336646A (en) * | 2014-08-15 | 2016-02-17 | 力晶科技股份有限公司 | Process control method and process control system |
| CN112038233A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for reducing load effect of different products in furnace tube |
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