CN114259203B - Chip integrated coherence tomography system - Google Patents
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Abstract
Description
技术领域technical field
本发明属于增强光学成像技术领域,尤其涉及一种芯片集成相干断层成像系统。The invention belongs to the technical field of enhanced optical imaging, in particular to a chip-integrated coherence tomography system.
背景技术Background technique
光学相干断层成像术是一种高分辨率,非接触性、无创的生物组织成像技术。自从20世纪90年代初应用于眼科临床以来,这项技术在活体上获得类似于眼组织病理改变的影像,提高了一些疾病发生发展过程的认识,是继眼科放射诊断、超声诊断、血管造影诊断后又一全新的影像学诊断技术,光学相干断层成像术以其高分辨率引起了广泛的研究。Optical coherence tomography is a high-resolution, non-contact, non-invasive technique for imaging biological tissues. Since it was applied in clinical ophthalmology in the early 1990s, this technology has obtained images similar to ocular histopathological changes in vivo, which has improved the understanding of the occurrence and development of some diseases. After another brand-new diagnostic imaging technology, optical coherence tomography has attracted extensive research due to its high resolution.
相关技术中,通过使用外加参考臂光纤长度的方式增加参考臂光程,使得参考臂与样品臂的光程差满足样品深层成像。这种方法有效的增加了成像的深度,但是只能对某一固定深度或者小范围内进行成像,无法实现大范围的成像深度调节,仍存在一定的使用缺陷。In related technologies, the optical path length of the reference arm is increased by adding the length of the optical fiber of the reference arm, so that the optical path difference between the reference arm and the sample arm satisfies the deep imaging of the sample. This method effectively increases the imaging depth, but it can only image at a certain fixed depth or within a small range, and cannot realize a wide range of imaging depth adjustment, and there are still certain defects in use.
发明内容Contents of the invention
有鉴于此,本发明实施例提供一种芯片集成相干断层成像系统,以解决无法实现大范围的成像深度调节,存在一定的使用缺陷的问题。In view of this, an embodiment of the present invention provides a chip-integrated coherence tomography system to solve the problem that a wide range of imaging depth cannot be adjusted and there are certain defects in use.
为解决上述问题,本发明实施例的技术方案是这样实现的:In order to solve the above-mentioned problems, the technical solutions of the embodiments of the present invention are implemented in the following way:
一种芯片集成相干断层成像系统,包括成像组件和硅基层以及设置在所述硅基层上的可调延迟线圈组件,所述成像组件包括光源以及沿光线传输方向依次设置的用于调控光线传播方向的第一环形器和用于控制光场模式的第一偏振控制器和用于接收从所述第一偏振控制器输出的光线并进行分光的分束器,所述光源、所述第一环形器、所述第一偏振控制器和所述分束器之间均通过光纤相连;所述成像组件还包括分别通过光纤与所述分束器相连的样品臂和参考臂,所述样品臂上连接有能将样品信息传回至所述分束器的样品信息采集组件,所述可调延迟线圈组件连接在所述参考臂上,所述可调延迟线圈组件用于对输入的光线进行光程控制,并将处理后的光线传回至所述分束器。A chip-integrated coherence tomography system, comprising an imaging component, a silicon base layer and an adjustable delay coil component arranged on the silicon base layer, the imaging component including a light source and sequentially arranged along the light transmission direction for adjusting the light propagation direction The first circulator, the first polarization controller for controlling the light field mode, and the beam splitter for receiving and splitting the light output from the first polarization controller, the light source, the first circulator The first polarization controller and the beam splitter are all connected by optical fibers; the imaging assembly also includes a sample arm and a reference arm that are respectively connected to the beam splitter by optical fibers, and on the sample arm A sample information collection assembly capable of transmitting sample information back to the beam splitter is connected, the adjustable delay coil assembly is connected to the reference arm, and the adjustable delay coil assembly is used to perform optical processing on the input light process control and send the processed light back to the beam splitter.
一些实施方案中,所述可调延迟线圈组件包括沿光线传播方向依次设置、并通过串联的第二环形器、第一马赫曾德尔调制器、第二马赫曾德尔调制器、第三马赫曾德尔调制器和第三环形器,所述第二环形器和所述第三环形器之间连接有返回光纤;其中,所述第一马赫曾德尔调制器和所述第二马赫曾德尔调制器之间、所述第二马赫曾德尔调制器和所述第三马赫曾德尔调制器之间以及所述第三马赫曾德尔调制器和所述第三环形器之间连接不同延迟量的氮化硅波导可调延迟线圈。In some embodiments, the adjustable delay coil assembly includes a second circulator, a first Mach-Zehnder modulator, a second Mach-Zehnder modulator, a third Mach-Zehnder A modulator and a third circulator, a return optical fiber is connected between the second circulator and the third circulator; wherein, the first Mach-Zehnder modulator and the second Mach-Zehnder modulator between the second Mach-Zehnder modulator and the third Mach-Zehnder modulator, and between the third Mach-Zehnder modulator and the third circulator are connected silicon nitride with different delays Waveguide tunable delay coils.
一些实施方案中,所述第一马赫曾德尔调制器、所述第二马赫曾德尔调制器和所述第三马赫曾德尔调制器均包括用于控制光线传播路径的控制电极。In some embodiments, the first Mach-Zehnder modulator, the second Mach-Zehnder modulator and the third Mach-Zehnder modulator each include a control electrode for controlling the light propagation path.
一些实施方案中,所述氮化硅波导可调延迟线圈包括线圈本体,所述线圈本体内形成有容纳空腔。In some implementations, the silicon nitride waveguide adjustable delay coil includes a coil body, and an accommodation cavity is formed in the coil body.
一些实施方案中,所述氮化硅波导可调延迟线圈还包括波导电极,所述波导电极设置在所述容纳空腔内。In some implementations, the silicon nitride waveguide tunable delay coil further includes a waveguide electrode, and the waveguide electrode is disposed in the accommodating cavity.
一些实施方案中,所述波导电极上覆盖有非线性介质材料层。In some embodiments, the waveguide electrode is covered with a layer of nonlinear dielectric material.
一些实施方案中,所述成像组件还包括用于接收由所述第三环形器射出的光线,并将光线反射回所述第三环形器的反射器,所述反射器和所述第三环形器之间通过光纤相连。In some embodiments, the imaging component further includes a reflector for receiving the light emitted by the third circulator and reflecting the light back to the third circulator, the reflector and the third circulator The devices are connected by optical fiber.
一些实施方案中,在所述分束器和所述第二环形器之间的光纤上还设置有用于控制光线光场模式的第二偏振控制器。In some implementations, a second polarization controller for controlling the light field mode of the light is further arranged on the optical fiber between the beam splitter and the second circulator.
一些实施方案中,所述样品信息采集组件包括沿光线传播方向依次设置、并通过光纤连接的第三偏振控制器、用于调整所述样品臂上光程匹配度的光纤延迟线圈和用于采集样品信息的可调焦距透镜组,所述可调焦距透镜组与待测样品间隔相对设置。In some embodiments, the sample information collection component includes a third polarization controller arranged in sequence along the light propagation direction and connected by an optical fiber, an optical fiber delay coil for adjusting the optical path matching degree on the sample arm, and an optical fiber delay coil for collecting An adjustable focus lens group for sample information, the adjustable focus lens group is set opposite to the sample to be measured.
一些实施方案中,所述成像组件还包括用于接收从所述分束器返回,并包含有样品信息的接收器,所述接收器通过光纤与所述第一环形器相连。In some embodiments, the imaging component further includes a receiver for receiving information returned from the beam splitter and containing sample information, and the receiver is connected to the first circulator through an optical fiber.
本发明实施例所提供的一种芯片集成相干断层成像系统,包括成像组件和硅基层以及设置在硅基层上的可调延迟线圈组件,可调延迟线圈组件用于对输入的光线进行光程控制,并将处理后的光线传回至分束器。这样,通过设置有可调延迟线圈组件,在对可调延迟线圈组件的工作模式进行控制,便可实现对光程长度大小的精准控制,使检测过程中的参考臂的长度可以按需调节,而且调节范围广,调节精度高,能够实现光学相干断层成像术成像深度的大范围可调。而且,芯片集成相干断层成像系统尺寸小,结构紧凑,便于生产,满足使用需求。A chip-integrated coherence tomography system provided by an embodiment of the present invention includes an imaging component, a silicon base layer, and an adjustable delay coil component disposed on the silicon base layer, and the adjustable delay coil component is used to control the optical path of the input light , and transmit the processed light back to the beam splitter. In this way, by setting the adjustable delay coil assembly and controlling the working mode of the adjustable delay coil assembly, the precise control of the length of the optical path can be realized, so that the length of the reference arm in the detection process can be adjusted as required, Moreover, the adjustment range is wide, the adjustment precision is high, and the imaging depth of the optical coherence tomography can be adjusted in a large range. Moreover, the chip-integrated coherence tomography system is small in size, compact in structure, easy to produce, and meets usage requirements.
附图说明Description of drawings
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the accompanying drawings that need to be used in the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For Those skilled in the art can also obtain other drawings based on these drawings without any creative effort.
图1是本发明实施例提供的芯片集成相干断层成像系统的结构示意图;FIG. 1 is a schematic structural diagram of a chip-integrated coherence tomography system provided by an embodiment of the present invention;
图2是本发明实施例提供的硅基层的结构示意图;Fig. 2 is a schematic structural diagram of a silicon-based layer provided by an embodiment of the present invention;
图3是本发明实施例提供的氮化硅波导可调延迟线圈的结构示意图。Fig. 3 is a schematic structural diagram of a silicon nitride waveguide tunable delay coil provided by an embodiment of the present invention.
附图标记说明:Explanation of reference signs:
1、芯片集成相干断层成像系统;10、样品;11、硅基层;111、硅衬底;112、二氧化硅埋氧层;113、氮化硅层;12、成像组件;121、光源;122、第一环形器;123、第一偏振控制器;124、分束器;125、样品臂;126、参考臂;13、样品信息采集组件;131、第三偏振控制器;132、光纤延迟线圈;133、可调焦距透镜组;14、可调延迟线圈组件;140、控制电极;141、第二环形器;142、第一马赫曾德尔调制器;143、第二马赫曾德尔调制器;144、第三马赫曾德尔调制;145、第三环形器;146、返回光纤;147、氮化硅波导可调延迟线圈;1471、线圈本体;1472、容纳空腔;1473、波导电极;1474、非线性介质材料层;15、反射器;16、第二偏振控制器;17、接收器。1. Chip integrated coherence tomography system; 10. Sample; 11. Silicon base layer; 111. Silicon substrate; 112. Silicon dioxide buried oxide layer; 113. Silicon nitride layer; 12. Imaging component; 121. Light source; 122 , the first circulator; 123, the first polarization controller; 124, the beam splitter; 125, the sample arm; 126, the reference arm; 13, the sample information collection component; 131, the third polarization controller; 132, the fiber delay coil ; 133, adjustable focal length lens group; 14, adjustable delay coil assembly; 140, control electrode; 141, second circulator; 142, first Mach-Zehnder modulator; 143, second Mach-Zehnder modulator; 144 , third Mach-Zehnder modulation; 145, third circulator; 146, return optical fiber; 147, silicon nitride waveguide adjustable delay coil; 1471, coil body; 1472, containing cavity; 1473, waveguide electrode; 1474, non A linear dielectric material layer; 15, a reflector; 16, a second polarization controller; 17, a receiver.
具体实施方式detailed description
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
在具体实施例中所描述的各个具体技术特征,在不矛盾的情况下,可以通过任何合适的方式进行组合,例如通过不同的具体技术特征的组合可以形成不同的实施例和技术方案。为了避免不必要的重复,本发明中各个具体技术特征的各种可能的组合方式不再另行说明。The various specific technical features described in the specific embodiments can be combined in any suitable manner if there is no contradiction, for example, different embodiments and technical solutions can be formed by combining different specific technical features. In order to avoid unnecessary repetition, various possible combinations of specific technical features in the present invention will not be further described.
还需要说明的是,本发明实施例中的左、右、上、下等方位用语,仅是互为相对概念或是以产品的正常使用状态为参考的,而不应该认为是具有限制性的。It should also be noted that the orientation terms such as left, right, up, and down in the embodiments of the present invention are only relative concepts or refer to the normal use state of the product, and should not be regarded as restrictive .
如图1和图2所示,本发明实施例提供的一种芯片集成相干断层成像系统1,包括成像组件12和硅基层11以及设置在硅基层11上的可调延迟线圈组件14。硅基层11包括位于底层的硅衬底111、位于中间层的二氧化硅埋氧层112和位于顶层的氮化硅波导层113。成像组件12包括光源121以及沿光线传输方向依次设置的用于调控光线传播方向的第一环形器122和用于控制光场模式的第一偏振控制器123和用于接收从第一偏振控制器123输出的光线并进行分光的分束器124,光源121、第一环形器122、第一偏振控制器123和分束器124之间均通过光纤相连;成像组件12还包括分别通过光纤与分束器124相连的样品臂125和参考臂126,样品臂125上连接有能将样品信息传回至分束器124的样品信息采集组件13,可调延迟线圈组件14连接在参考臂126上,该可调延迟线圈组件14用于对输入的光线进行光程控制,并将处理后的光线传回至分束器124的。具体地,光源121为系统提供光源121信号,光源121具体的波长可根据不同的样品进行更换。光源121发出的光通过光纤传入到第一环形器122,光在第一环形器122中只能往一个方向传播,而光从第一环形器122处射出后进入到第一偏振控制器123,通过第一偏振控制保持输入光为TE模,在进入到分束器124内,该分束器124可选为宽谱光纤分束器124,能够将光分为频率、相位均相同的光束。经过分束器124将光束光强分为3∶1,分别进入到样品臂125和参考臂126。样品臂125上设置的样品信息采集组件13。样品信息采集组件13可采集较大深度范围的样品相位信息。并在采集到样品相位信息后再沿光路返回到分束器124处。参考臂126上设置的可调延迟线圈组件14能够根据检测需求对光线的光程实现大范围且精准的控制,并将调控的后光线传回至分束器124内。这样,从样品信息采集组件13返回的光线和从可调延迟线圈组件14返回的光线在分束器124内发生干涉,干涉信息通过第一环形器122后输出到接收器17,最后经过计算处理单元而形成图像。As shown in FIGS. 1 and 2 , a chip-integrated coherence tomography system 1 provided by an embodiment of the present invention includes an
本发明实施例提供的芯片集成相干断层成像系统1,可通过对可调延迟线圈组件14的工作模式进行控制,便可实现对光程长度大小的精准控制,使检测过程中的参考臂126的长度可以按需调节,而且调节范围广,调节精度高,能够实现光学相干断层成像术成像深度的大范围可调。而且,芯片集成相干断层成像系统1尺寸小,结构紧凑,便于生产,满足了使用需求。The chip-integrated coherence tomography system 1 provided by the embodiment of the present invention can precisely control the length of the optical path by controlling the working mode of the adjustable
如图2所示,在一些实施例中,可选的将硅衬底111的厚度设置成600μm、将二氧化硅埋氧层112的厚度设置成2~3μm,将位于顶层的氮化硅波导层113的厚度设置为0.3~1μm,以能够可靠满足整个系统结构的设置需求。As shown in FIG. 2, in some embodiments, the thickness of the
如图1所示,在一些实施例中,可调延迟线圈组件14包括沿光线传播方向依次设置、并通过光纤串联的第二环形器141、第一马赫曾德尔调制器142、第二马赫曾德尔调制器143、第三马赫曾德尔调制器144和第三环形器145,第二环形器141和第三环形器145之间连接有返回光纤146。并且,在第一马赫曾德尔调制器142和第二马赫曾德尔调制器143之间、第二马赫曾德尔调制器143和第三马赫曾德尔调制器144之间以及第三马赫曾德尔调制器144和第三环形器145之间连接不同延迟量的氮化硅波导可调延迟线圈147。具体地,第二环形器141和第三环形器145的设置能够对光线的传播方向进行控制,避免最后从第三环形器145射出的光线在转换为反射光后再次进入到氮化硅波导可调延迟线圈147内。氮化硅波导可调延迟线圈147由氮化硅波导按周期性结构设计的波导线圈,由于波导长度的增加,波导中的光传播的距离也会增加,从而增加了光程。这样,通过调节接入的线圈的个数可以控制光程固定增加。而第一马赫曾德尔调制器142、第二马赫曾德尔调制器143和第三马赫曾德尔调制器144的设置则分别用于控制连接在对应位置处的化硅波导可调延迟线圈的接入情况。通过此种结构设置,从第二环形器141射出的光线向第一马赫曾德尔调制器142、第二马赫曾德尔调制器143、第三马赫曾德尔调制器144和第三环形器145所在的方向传播,而根据使用需求,通过对三个马赫曾德尔调制器的相应控制,便可实现对光程的长度进行控制。即,当开启第一马赫曾德尔调制器142时,光线便会向传向至设置在位于第一马赫曾德尔调制器142和第二马赫曾德尔调制器143之间的氮化硅波导可调延迟线圈147,并在通过氮化硅波导可调延迟线圈147后,再根据第二马赫曾德尔调制器143的开启或关闭的情况进行传送。在当第二马赫曾德尔调制器143为关闭状态时,光线便会向直接向第三马赫曾德尔调制器144传送;而当第二马赫曾德尔调制器143为开启状态时,光线便会传向至设置在位于第二马赫曾德尔调制器143和第三马赫曾德尔调制器144之间的氮化硅波导可调延迟线圈147中,最后传送至第三马赫曾德尔调制器144。此时,再根据第三马赫曾德尔调制器144的开启或关闭的情况进行传送。在当第三马赫曾德尔调制器144为关闭状态时,光线便会向直接向第三环形器145中;而当第三马赫曾德尔调制器144为开启状态时,光线便会传向至设置在位于第三马赫曾德尔调制器144和第三环形器145之间的氮化硅波导可调延迟线圈147中,最后传送至第三环形器145。如此,通过对光线所经过的氮化硅波导可调延迟线圈147的数量进行控制,便实现了整个光程的控制,达到控制光路总长的目的。As shown in Fig. 1, in some embodiments, the adjustable
在一些实施例中,可根据设计需求的不同,选择马赫曾德尔调制器设置的个数以及设置在相邻两个马赫曾德尔调制器之间的氮化硅波导可调延迟线圈147的个数,在此并不做限制。而且,当设置在位于两个马赫曾德尔调制器之间的氮化硅波导可调延迟线圈147的个数为两个以上时,各氮化硅波导可调延迟线圈147采用串联的方式设置。In some embodiments, the number of Mach-Zehnder modulators and the number of silicon nitride waveguide adjustable delay coils 147 arranged between two adjacent Mach-Zehnder modulators can be selected according to different design requirements. , there is no restriction here. Moreover, when there are more than two silicon nitride waveguide adjustable delay coils 147 arranged between two Mach-Zehnder modulators, each silicon nitride waveguide
如图1所示,在发明实施例中,根据设计需求,将各氮化硅波导可调延迟线圈147的波导长度均相同均为ΔL,位于第一马赫曾德尔调制器142和第二马赫曾德尔调制器143之间的氮化硅波导可调延迟线圈147设置为一个,位于第二马赫曾德尔调制器143和第三马赫曾德尔调制器144之间的氮化硅波导可调延迟线圈147设置为两个,位于第三马赫曾德尔调制器144和第三环形器145之间的氮化硅波导可调延迟线圈147设置为四个。这样,该系统可以实现0至7ΔL的延迟量的控制。当然,该ΔL长度可通过具体应用进行工艺上的修改,而且,设置的个数也能够进行调整,从而获得不同的光程,实现了光程大范围的延迟量,满足了不同使用需求。As shown in FIG. 1 , in the embodiment of the invention, according to design requirements, the waveguide lengths of the silicon nitride waveguide adjustable delay coils 147 are all the same as ΔL, located between the first Mach-
如图1所示,在一些实施例中,第一马赫曾德尔调制器142、第二马赫曾德尔调制器143和第三马赫曾德尔调制器144上均包括用于控制光线传播路径的控制电极140。通过该控制电极140上所施加的电压来控制氮化硅波导可调延迟线圈147是否接入光路中,从而改变接入氮化硅波导可调延迟线圈147的个数,达到控制光路总长度的目的。As shown in FIG. 1, in some embodiments, the first Mach-
如图1和图3所示,在一些实施例中,氮化硅波导可调延迟线圈147包括线圈本体1471,线圈本体1471内形成有容纳空腔1472。具体地,线圈本体1471是由氮化硅波导按周期性结构设计的波导线圈,由于波导长度的增加,波导中的光传播的距离也会增加。这样,根据设计需求将线圈本体1471绕制成所需要的形状,起到增加光程长度的作用。本发明实施例中,该线圈本体1471内通过绕制而在中间位置形成有容纳空腔1472。As shown in FIG. 1 and FIG. 3 , in some embodiments, the silicon nitride waveguide tunable delay
如图3所示,在一些实施例中,该氮化硅波导可调延迟线圈147还包括波导电极1473,波导电极1473设置在容纳空腔1472内。该波导电极1473的设置用于为波导两端施加电场,改变波导的有效折射率,从而改变光程。这样,通过对单个氮化硅波导可调延迟线圈147中的光程进行控制,还能够实现对光程长度在某一范围内的精细调整,提升了整个光程长度控制的调整范围和调整的精准度。As shown in FIG. 3 , in some embodiments, the silicon nitride waveguide tunable delay
如图3所示,在一些实施例中,波导电极1473上覆盖有非线性介质材料层1474。该非线性介质材料层1474用于增强波导的克尔效应,使得电调制效果更加明显。这样,每个氮化硅波导可调延迟线圈147上的波导电极1473加电后,由于电场以及非线性介质材料的作用下,波导的有效折射率会发生变化,从而实现了在小范围内改变光程。当然,还可在氮化硅波导层113上也覆盖有非线性介质材料层1474,以提高性能。具体地,该非线性介质材料可通过湿法转移或物理气相沉积法制备到氮化硅波导可调延迟线圈147的波导上,提高电调制效果。该非线性介质材料可以是石墨烯、过渡金属硫化物(如二硫化钼、二硫化钨等二维材料)等。As shown in FIG. 3 , in some embodiments, the
如图1所示,在一些实施例中,成像组件12还包括用于接收由第三环形器145射出的光线,并将光线反射回第三环形器145的反射器15,反射器15和第三环形器145之间通过光纤相连。这样设置,从第三环形器145射出的光射向发射器,而反射器15将反射光沿光路再次进入到第三环形器145内。第二环形器141和第三环形器145均能控制进入光线和经反射后再次进入的光线互不干扰。如此,进入到第三环形器145中的反射光由输出口进入到返回光纤146中,并传入到第二环形器141中,最后进入到分束器124中。As shown in FIG. 1 , in some embodiments, the
如图1所示,在一些实施例中,在分束器124和第二环形器141之间的光纤上还设置有用于控制光场模式的第二偏振控制器16。通过设置该第二偏振控制,保证了反射光仍然为TE模,提升结果的准确性。该TE模是指电磁波的传播方向上电场的纵分向为零,磁场的纵向分量不为零的传播模式。As shown in FIG. 1 , in some embodiments, a
如图1所示,在一些实施例中,样品信息采集组件13包括光纤连接的第三偏振控制器131、用于调整样品臂125上光程匹配度的光纤延迟线圈132和用于采集样品信息的可调焦距透镜组133,可调焦距透镜组133与待测样品10间隔相对设置。这样设置,第三偏振控制器131的设置保证了入射光和反射光为TE模。而该光纤延迟线圈132由光纤制成的固定长度的线圈,通过固定接入的光纤延迟线圈132的长度便能够使参考臂126与样品臂125光路的光程匹配。具体地,可调焦距透镜组133将光线聚焦后照射样品10,光线在样品10处发生反射和散射,这部分信号光被焦距可调节透镜组接收后,沿光路返回至分束器124处。可根据可调焦距透镜组133所需要的光程差接入所需要可调延迟线圈147的个数,使得样品臂125以及参考臂126之间的光程差处于合适的大小。再通过接入氮化硅波导可调延迟线圈147上的波导电极1473,加上不同的电压,从而使得成像图像在观察深度处更深层或更浅层的范围内可调谐。As shown in FIG. 1 , in some embodiments, the sample
如图1所示,在一些实施例中,成像组件12还包括用于接收从分束器124返回,并包含有样品信息的接收器17,接收器17通过光纤与第一环形器122相连。该接收器17将接收到包含有样品检测信息的光线经过计算处理单元形成图像,最后将样品信息处理后输出,完成检测。As shown in FIG. 1 , in some embodiments, the
本发明实施例中所提供的芯片集成相干断层成像系统1,可以通过调节接入氮化硅波导可调延迟线圈147的个数使整体光程变化量大范围可调,并通过对接入线圈上的波导电极1473施加电压使得整体的光程在某一范围内可调,从而达到了大范围、且精细的调节功能。该芯片集成相干断层成像系统1利用氮化硅的低传输损耗以及较宽的透明窗口等特点,使得光在氮化硅波导可调延迟线圈147中的损耗很低,进而使得芯片集成相干断层成像系统1的整体功耗降低,并且由于氮化硅0.4~8umm的透明窗口,使得该系统可以适配市面上绝大多数光源121。同时,该芯片集成相干断层成像系统1通过硅基集成,具有尺寸小,结构紧凑的优点,在实际制作中易于大规模的生产,经济效益好。The chip-integrated coherence tomography system 1 provided in the embodiment of the present invention can adjust the number of adjustable delay coils 147 connected to the silicon nitride waveguide so that the overall optical path change can be adjusted in a wide range. Applying a voltage to the
本发明实施例中所提供的芯片集成相干断层成像系统1的工作方式为:The working mode of the chip-integrated coherence tomography system 1 provided in the embodiment of the present invention is as follows:
光源121发出的相干光,通过第一环形器122使得光线进入第一偏振控制器123,第一偏振控制器123控制输入光为TE模,随后进入分束器124中将光分为两束,分束比为样品臂125光强比参考臂126光强为3∶1,而且该比例可依据所测样品10不同而改变。样品臂125中的光经过第三偏振控制器131保证了光线仍为TE模,之后光线在经过光纤延迟线圈132后进入焦距可调节透镜组,焦距可调节透镜组将光线聚焦后照射样品10,光线在样品10处发生反射和散射,这部分信号光被焦距可调节透镜组接收后,沿光路返回至分束器124处。参考臂126中的光线从分束器124出射后经过第二偏振控制器16到达第二环形器141,之后光在通过第一马赫曾德尔调制器142时可以改变第一马赫曾德尔调制器142上的电压控制光是否通过氮化硅波导可调延迟线圈147,当三个马赫曾德尔调制器均控制光路不通过氮化硅波导可调延迟线圈147时,延迟量零。光通过氮化硅波导可调延迟线圈147时,可以通过调节第一马赫曾德尔调制器142、第二马赫曾德尔调制器143和第三马赫曾德尔调制器144上的控制电极140的电压实现光程切换,若每个氮化硅波导可调延迟线圈147的增加的光程为ΔL,则该系统可以实现0至7ΔL的延迟量。另外每个氮化硅波导可调延迟线圈147加电后,由于电场以及非线性介质材料的作用下,波导的有效折射率会发生变化,从而在小范围内改变光程。光线通过最后一个氮化硅波导可调延迟线圈147后进入第三环形器145,并且沿着光路到达反射器15处,反射光沿光路再次进入环第三环形器145,并通过输出口到达第二环形器141,再沿光路返回至第二偏振控制器16以及分束器124。第二偏振控制器16保证了反射光仍然为TE模。参考光以及样品光在分束器124发生干涉,干涉信息通过第一环形器122进入到接收器中,经过计算处理单元形成图像之后,实现将样品信息处理后输出。The coherent light emitted by the
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.
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