CN114250445B - Microwave plasma vapor phase epitaxy deposition equipment with lifting device - Google Patents
Microwave plasma vapor phase epitaxy deposition equipment with lifting device Download PDFInfo
- Publication number
- CN114250445B CN114250445B CN202010991361.2A CN202010991361A CN114250445B CN 114250445 B CN114250445 B CN 114250445B CN 202010991361 A CN202010991361 A CN 202010991361A CN 114250445 B CN114250445 B CN 114250445B
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- CN
- China
- Prior art keywords
- transmission system
- microwave
- cavity
- upper cavity
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000151 deposition Methods 0.000 title claims abstract description 14
- 230000008021 deposition Effects 0.000 title claims abstract description 14
- 238000000927 vapour-phase epitaxy Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000005540 biological transmission Effects 0.000 claims abstract description 33
- 238000007789 sealing Methods 0.000 claims abstract description 9
- 239000011553 magnetic fluid Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 8
- 238000013461 design Methods 0.000 abstract description 7
- 230000033001 locomotion Effects 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Abstract
The invention discloses microwave plasma vapor phase epitaxy deposition equipment with a lifting device, which mainly comprises a microwave transmission system, an upper cavity, a microwave source supporting table, a transmission system supporting table connecting piece, a lifting push rod and motor, a working platform, a substrate table, a lower cavity, a sealing ring, magnetic fluid, a substrate table push rod and motor. The invention carries out modularized design on the microwave transmission system and the upper cavity part of the microwave plasma vapor phase epitaxy deposition equipment, can realize integral lifting in the process of placing the substrate and maintaining the equipment, can ensure sufficient operation space in the process of placing the substrate, reduces the direct influence of the substrate table structure on the microwave transmission, and simultaneously avoids new fault hidden trouble caused by complex operation in the process of maintaining the equipment and the like.
Description
Technical Field
The invention relates to the technical field of chemical vapor deposition, in particular to microwave plasma vapor phase epitaxy deposition equipment with a lifting device.
Background
Diamond is known as the final semiconductor, and diamond growth by microwave plasma vapor phase epitaxial deposition equipment is by far the purest and most efficient approach. The working principle is that the cylindrical cavity and microwave resonate to generate a central strong electric field to ionize hydrogen in the cavity, so that the hydrogen is changed into plasma, then methane is introduced and ionized into carbon-containing groups, and the carbon-containing groups are deposited on a diamond substrate to grow diamond. Due to the characteristics of the cavity, the density distribution gradient of the plasma in the excited plasma sphere is remarkable. This requires a multifunctional substrate table, particularly one that has the functions of rotation and up and down movement to enhance the uniformity of the material during growth, which presents a certain difficulty for feeding microwaves into the cavity from the bottom. However, when the microwave system enters the cavity from the top, the operation space of the cavity is generally limited due to the requirement of the sealing performance of the cavity, which causes inconvenience for placing the substrate or maintaining the equipment. Therefore, a modularized design concept is introduced in the design, the microwave transmission system and the upper cavity part are subjected to modularized design, and the large-scale lifting of the operation space can be realized through synchronous lifting of the whole microwave system and the upper cavity in the substrate placing process.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a microwave transmission modularized design of microwave plasma vapor phase epitaxy deposition equipment, which is convenient for placing and operating a substrate, and the technical scheme is as follows: the invention provides microwave plasma vapor phase epitaxy deposition equipment with a lifting device, which mainly comprises a microwave transmission system, an upper cavity (6), a transmission system supporting table connecting piece (9), a lifting push rod and a motor (10), a working platform (12), a lower cavity (14) and a substrate table (13), wherein the microwave transmission system is formed by sequentially and fixedly connecting a microwave source (1), a coupler (2), a triaxial matcher (3), a mode converter (4) and a short-circuiting device (5), and is characterized in that microwaves are coupled into a working cavity formed by the upper cavity (6) and the lower cavity (14) from the top of the upper cavity through the microwave transmission system, the microwave transmission system is fixedly connected with the upper cavity (6) through the mode converter (4), the transmission system supporting table connecting piece (9) below the triaxial matcher (3) is fixedly connected with a microwave source supporting table (7) and a rectangular waveguide supporting table (8) respectively, and the lower part of the transmission system supporting table connecting piece (9) is fixedly connected with the lifting push rod and the motor (10) so as to drive the lifting push rod and the motor (10) to move synchronously when the lifting push rod and the motor (10) are driven to move upwards.
Preferably, the microwave source supporting table (7) is connected with the working platform (12) through a gas spring (11) to play a role in balancing motion buffering, and the gas spring (11) can also be a cylinder or an electric screw rod or other active driving mechanisms to balance the difference of left and right lever forces of motion.
Preferably, sealing rings (15) are arranged at the upper cavity (6) and the lower cavity (14), and after the upper cavity falls down, the lifting push rod and the motor (10) apply contact pressure between the upper cavity and the lower cavity through motor reversal, so that the sealing performance is enhanced.
Preferably, the substrate table (13) can freely rotate and move up and down, and magnetic fluid (16) is arranged between the substrate table and the working platform (12) to dynamically seal the cavity, so that the stability of sealing in the cavity in the rotating and up and down moving processes of the substrate table is ensured.
Alternatively, the surface morphology of the substrate table (13) may be a bumped substrate table according to the requirements of the growth process, the substrate table (13) being used to carry a molybdenum metal tray on which the diamond substrate is placed. Through the design of the bosses with different sizes and heights on the surface of the substrate table (13), the shape of plasma in the cavity can be flexibly changed according to the needs. The diameter range of the boss may be set to 90 to 200 mm depending on the size of the substrate and its tray.
According to the invention, the microwave transmission system and the upper cavity (6) are modularly designed, so that synchronous lifting of the microwave transmission system and the upper cavity is ensured, sufficient operation space is provided for placing the substrate, meanwhile, the lifting device of the microwave transmission system and the upper cavity (6) ensures that the operability of the microwave plasma vapor phase epitaxy deposition equipment is greatly improved and the error probability is reduced in the process of placing and subsequent maintenance of the substrate, the operation is simple, and the adopted mechanical structure can also stably run.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention.
Detailed Description
Example 1: referring to fig. 1, the microwave plasma vapor phase epitaxy deposition device with the lifting device provided by the invention mainly comprises a microwave transmission system, an upper cavity 6, a transmission system supporting table connecting piece 9, a lifting push rod and a motor 10, a working platform 12, a lower cavity 14 and a substrate table 13, wherein the microwave transmission system is formed by sequentially and fixedly connecting a microwave source 1, a coupler 2, a triaxial matcher 3, a mode converter 4 and a short-circuiting device 5, microwaves are coupled into a working cavity formed by the upper cavity 6 and the lower cavity 14 from the top of the upper cavity 6 through the microwave transmission system, the microwave transmission system is fixedly connected with the upper cavity 6 through the mode converter 4, a transmission system supporting table connecting piece 9 below the triaxial matcher 3 is fixedly connected with a microwave source supporting table 7 and a rectangular waveguide supporting table 8 respectively, and the lower part of the transmission system supporting table connecting piece 9 is fixedly connected with the lifting push rod and the motor 10, and the microwave transmission system and the upper cavity are driven by the lifting push rod and the motor 10 to realize synchronous lifting motion.
Example 2: referring to fig. 1, in the embodiment 1, the microwave source support table 7 and the working platform 12 are connected by a gas spring 11 to play a role in balancing motion buffering, and the gas spring 11 may be a cylinder or an electric screw and other active driving mechanisms to balance the difference of left and right lever forces of motion.
Example 3: referring to fig. 1, on the basis of embodiment 1, sealing rings 15 are disposed at the upper cavity 6 and the lower cavity 14, and when the upper cavity falls, the lifting push rod and the motor 10 apply contact pressure between the upper cavity and the lower cavity through motor reversal, so as to realize enhancement of sealing performance.
Example 4: referring to fig. 1, on the basis of embodiment 1, the substrate table 13 can freely rotate and move up and down, and magnetic fluid 16 is arranged between the substrate table and the working platform 12 to dynamically seal the cavity, so that the stability of sealing in the cavity during the rotation and up and down movement of the substrate table is ensured.
Example 5: referring to fig. 1, alternatively, the surface morphology of the substrate stage 13 may be a substrate stage with a boss according to the requirement of the growth process, and the substrate stage 13 is used to carry a molybdenum metal tray on which a diamond substrate is placed, on the basis of example 1. Through the design of the bosses with different sizes and heights on the surface of the substrate table 13, the plasma form in the cavity can be flexibly and correspondingly changed according to the needs. Wherein the diameter range of the boss may be set to 90 to 200 mm according to the size of the substrate and its tray.
The foregoing description is intended to be illustrative only and not limiting, and it will be understood by those of ordinary skill in the art that changes, modifications, or equivalents may be made in light of the foregoing disclosure without departing from the spirit and scope of the invention as defined by the following claims.
Claims (3)
1. The microwave plasma vapor phase epitaxy deposition equipment with a lifting device mainly comprises a microwave transmission system, an upper cavity (6), a transmission system supporting table connecting piece (9), a lifting push rod and a motor (10), a working platform (12), a lower cavity (14) and a substrate table (13), wherein the microwave transmission system is formed by sequentially and fixedly connecting a microwave source (1), a coupler (2), a triaxial matcher (3), a mode converter (4) and a short-circuiting device (5), the microwave plasma vapor phase epitaxy deposition equipment is characterized in that microwaves are coupled into a working cavity formed by the upper cavity (6) and the lower cavity (14) from the top of the upper cavity through the microwave transmission system, the microwave transmission system is fixedly connected with the upper cavity (6) through the mode converter (4), the transmission system supporting table connecting piece (9) below the triaxial matcher (3) is fixedly connected with the microwave source supporting table (7) and the rectangular waveguide supporting table (8) respectively, the lower part of the transmission system supporting table connecting piece (9) is fixedly connected with the lifting push rod and the motor (10), the microwave transmission system and the upper cavity (6) and the upper cavity (12) are driven by the microwave transmission system and the motor (10) to move synchronously through the lifting push rod and the lifting spring (11) to move freely and the substrate table (11), magnetic fluid (16) is arranged between the substrate table (13) and the working platform (12) to dynamically seal the cavity, the surface of the substrate table (13) is a boss, and the diameter range of the boss is 90-200 mm.
2. Microwave plasma vapor phase epitaxy deposition apparatus with lifting device according to claim 1, characterized in that the gas spring (11) is replaced by a cylinder or an electric screw.
3. Microwave plasma vapor phase epitaxy deposition equipment with lifting device according to claim 1, characterized in that sealing rings (15) are arranged at the upper cavity (6) and the lower cavity (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010991361.2A CN114250445B (en) | 2020-09-21 | 2020-09-21 | Microwave plasma vapor phase epitaxy deposition equipment with lifting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010991361.2A CN114250445B (en) | 2020-09-21 | 2020-09-21 | Microwave plasma vapor phase epitaxy deposition equipment with lifting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114250445A CN114250445A (en) | 2022-03-29 |
| CN114250445B true CN114250445B (en) | 2023-12-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010991361.2A Active CN114250445B (en) | 2020-09-21 | 2020-09-21 | Microwave plasma vapor phase epitaxy deposition equipment with lifting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114250445B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003052807A1 (en) * | 2001-12-14 | 2003-06-26 | Tokyo Electron Limited | Plasma processor |
| CN101481793A (en) * | 2008-12-26 | 2009-07-15 | 上海拓引数码技术有限公司 | Large area microwave plasma CVD device |
| CN110804732A (en) * | 2019-06-17 | 2020-02-18 | 湖上产业发展集团有限公司 | Plasma CVD apparatus |
| CN111235634A (en) * | 2020-03-09 | 2020-06-05 | 上海三朗纳米技术有限公司 | Microwave plasma diamond growth equipment and application method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW551782U (en) * | 2002-10-09 | 2003-09-01 | Ind Tech Res Inst | Microwave plasma processing device |
| JP5332254B2 (en) * | 2008-03-25 | 2013-11-06 | Ｔｄｋ株式会社 | Ferrite sintered body |
| JP5609225B2 (en) * | 2010-04-12 | 2014-10-22 | Fdk株式会社 | Ferrite substrate |
| CN102219487B (en) * | 2011-04-16 | 2013-02-20 | 江门安磁电子有限公司 | Wide-temperature low-loss MnZn ferrite material and preparation method thereof |
-
2020
- 2020-09-21 CN CN202010991361.2A patent/CN114250445B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003052807A1 (en) * | 2001-12-14 | 2003-06-26 | Tokyo Electron Limited | Plasma processor |
| CN1602543A (en) * | 2001-12-14 | 2005-03-30 | 东京毅力科创株式会社 | Plasma processor |
| CN101481793A (en) * | 2008-12-26 | 2009-07-15 | 上海拓引数码技术有限公司 | Large area microwave plasma CVD device |
| CN110804732A (en) * | 2019-06-17 | 2020-02-18 | 湖上产业发展集团有限公司 | Plasma CVD apparatus |
| CN111235634A (en) * | 2020-03-09 | 2020-06-05 | 上海三朗纳米技术有限公司 | Microwave plasma diamond growth equipment and application method thereof |
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| CN114250445A (en) | 2022-03-29 |
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