CN114243455B - Thin film discharge switch applied to energy management circuit - Google Patents
Thin film discharge switch applied to energy management circuit Download PDFInfo
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- CN114243455B CN114243455B CN202111488005.XA CN202111488005A CN114243455B CN 114243455 B CN114243455 B CN 114243455B CN 202111488005 A CN202111488005 A CN 202111488005A CN 114243455 B CN114243455 B CN 114243455B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T1/00—Details of spark gaps
- H01T1/24—Selection of materials for electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T1/00—Details of spark gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
- H01T2/00—Spark gaps comprising auxiliary triggering means
Abstract
The invention relates to the field of new energy, and discloses a thin film discharge switch applied to an energy management circuit, which comprises: a switch structure; the switch structure comprises an insulating layer, wherein the insulating layer is provided with a first surface and a second surface parallel to the first surface; the first electrode layer is arranged on the first surface of the insulating layer; the second electrode layer is arranged on the second surface of the insulating layer; the orthographic projection of the first electrode layer on the first surface of the insulating layer is at least partially overlapped with the orthographic projection of the second electrode layer on the first surface of the insulating layer; the partial edges of the first electrode layer, the second electrode layer and the insulating layer are all flush; the first wiring is electrically connected with the first electrode layer; the second wiring is electrically connected with the second electrode layer. The friction nano generator is used for improving the output efficiency of the friction nano generator for supplying power to the electronic device.
Description
Technical Field
The invention relates to the technical field of new energy, in particular to a thin film discharge switch applied to an energy management circuit.
Background
Friction nano-generator (TENG, triboelectric nanogenerators) technology has so far presented an exponential trend in the output power of TENG and products based on TENG technology have begun to appear to be put on the market. However, TENG requires a stable dc voltage supply for common electronic devices due to its own characteristics of very large impedance, high voltage, small current, etc., which results in very low output efficiency of TENG for supplying power to common electronic devices.
The energy conversion efficiency of directly charging the energy storage units such as the capacitor and the like through the rectifier is only about 1%, and the conversion efficiency can be generally improved to 50-99% through the energy management circuit technology, so that the effect of storing TENG output energy is greatly improved.
However, the research of the energy management circuit applied to the TENG field is not easy, wherein the most critical structure is a switch with a function of judging the discharge time in the circuit, when the TENG output energy increases the voltage to be close to the maximum value, the switch is communicated with the circuit, so that the energy is instantaneously released from the high voltage to the rear end energy storage structure, after the release is finished (i.e. the voltage approaches to the low voltage, such as 0V), the switch is disconnected again, and the energy is accumulated to the high level next time by TENG. Such a switch for determining the discharge timing becomes a difficulty in the study of the energy management circuit.
Therefore, how to fabricate a better performing switch becomes a key to the energy management circuit and to improve TENG energy harvesting efficiency.
Disclosure of Invention
The invention discloses a film discharge switch applied to an energy management circuit, which is used for improving the conversion efficiency of the energy management circuit and the output efficiency of a friction nano generator.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a thin film discharge switch for an energy management circuit, comprising:
a switch structure;
wherein the switch structure comprises an insulating layer having a first surface and a second surface parallel to the first surface;
a first electrode layer disposed on a first surface of the insulating layer;
the second electrode layer is arranged on the second surface of the insulating layer;
the orthographic projection of the first electrode layer on the first surface of the insulating layer is at least partially overlapped with the orthographic projection of the second electrode layer on the first surface of the insulating layer;
the partial edges of the first electrode layer, the second electrode layer and the insulating layer are all flush;
the first wiring is electrically connected with the first electrode layer;
and the second wiring is electrically connected with the second electrode layer.
The first electrode layer and the second electrode layer are arranged on the surfaces of two sides of the insulating layer, the first wiring is electrically connected with the first electrode layer, the second wiring is electrically connected with the second electrode layer, after the voltage between the two electrode layers reaches the threshold voltage of breakdown discharge between the conductive side lines by utilizing the breakdown discharge principle, the breakdown discharge occurs, and the direct correlation between the breakdown discharge threshold voltage of the conductive side lines and the distance between the conductive side lines is realized, wherein the distance is determined by the thickness of the insulating layer. The structure is simpler, the discharge voltage control precision is better, the quality is small, the impact resistance is realized, and the cost is relatively lower.
Optionally, the edges of the first electrode layer, the edges of the second electrode layer and the edges of the insulating layer are all flush.
Optionally, the first surface shape of the insulating layer is the same as the second surface shape.
Optionally, the first surface of the insulating layer is polygonal in shape; and/or, the shape of the second surface of the insulating layer is polygonal.
Optionally, the first surface of the insulating layer is arc-shaped; and/or, the second surface of the insulating layer is arc-shaped.
Optionally, the material of the first electrode layer includes at least one of metal, semiconductor, graphite, or conductive organic matter; and/or the material of the second electrode layer comprises at least one of metal, semiconductor, graphite or conductive organic matter.
Optionally, the material of the insulating layer includes at least one of plastic, wood, stone, glass, paper, cloth organic polymer or other insulating substances.
Optionally, the thin film discharge switch further comprises a housing having a receiving cavity, and the switch structure is located in the receiving cavity.
Optionally, a filling layer is arranged between the shell and the switch structure.
Optionally, the filling layer is gas, liquid or a material with a relative dielectric constant less than 2.
Optionally, the first electrode layer or the second electrode layer has a thickness of 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
Drawings
FIG. 1 is a schematic view of an angle structure of a thin film discharge switch according to an embodiment of the present invention;
fig. 2 a-2 c are flowcharts of a manufacturing process of a thin film discharge switch according to an embodiment of the present invention;
FIG. 3 is a schematic view of another angle of a thin film discharge switch according to an embodiment of the present invention;
FIG. 4 is a schematic view illustrating a structure of a thin film discharge switch according to another embodiment of the present invention;
FIG. 5 is a schematic view of a circular structure of a thin film discharge switch according to an embodiment of the present invention;
fig. 6 a-6 d are schematic structural views of other shapes of a thin film discharge switch according to an embodiment of the present invention;
fig. 6e is a schematic structural diagram of a thin film discharge switch according to an embodiment of the present invention;
FIG. 7 is a schematic diagram showing the relationship between the thickness of the insulating layer and the discharge voltage of the thin film discharge switch according to the embodiment of the present invention;
FIG. 8 is a schematic diagram of an energy management circuit according to an embodiment of the present invention;
fig. 9 is a schematic diagram of efficiency of a nano friction generator obtained after using a thin film discharge switch according to an embodiment of the present invention.
Icon: 01-a thin film discharge switch; 1-a switch structure; 11-an insulating layer; 12-a first electrode layer; 121-edge; 13-a second electrode layer; 131-edges; 14-a first trace; 15-a second trace; 02—temporary energy storage unit; 03-an energy storage unit; 04-rectifier; 05-inductance; 06-friction nano-generator; 07-diode.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1 to 5, an embodiment of the present invention provides a thin film discharge switch, including:
a switch structure 1;
wherein the switch structure 1 comprises an insulating layer 11, the insulating layer 11 having a first surface and a second surface parallel to the first surface;
a first electrode layer 12, the first electrode layer 12 being disposed on a first surface of the insulating layer 11;
a second electrode layer 13, the second electrode layer 13 being disposed on the second surface of the insulating layer 11;
the orthographic projection of the first electrode layer 12 on the first surface of the insulating layer 11 at least partially overlaps the orthographic projection of the second electrode layer 13 on the first surface of the insulating layer 11;
the partial edges 121 of the first electrode layer 12, the partial edges 131 of the second electrode layer 13 and the partial edges of the insulating layer 11 are all flush;
the first wire 14, the first wire 14 is electrically connected with the first electrode layer 12;
the second trace 15, the second trace 15 is electrically connected with the second electrode layer 13.
It should be noted that, by providing the first electrode layer 12 and the second electrode layer 13 on the two side surfaces of the insulating layer 11, the first trace 14 electrically connected to the first electrode layer 12, the second trace 15 electrically connected to the second electrode layer 13, and by using the principle of breakdown discharge, after the voltage between the two electrode layers reaches the threshold voltage of breakdown discharge between the conductive edge lines, the breakdown discharge between the threshold voltage of the conductive edge lines and the distance between the conductive edge lines are directly related, and the distance is determined by the thickness of the insulating layer 11, so that the distance between the conductive edge lines is easier to control, where the conductive edge lines refer to the partial edge 121 of the first electrode layer 12 that is flush with the partial edge of the insulating layer 11 and the partial edge of the second electrode layer 13 that is flush with the partial edge of the insulating layer 11. The structure is simpler, the discharge voltage control precision is better, the quality is small, the impact resistance is realized, and the cost is relatively lower.
The first wires 14 and the second wires 15 with conductive functions, and the parts connecting the first electrode layer 12 and the second electrode layer 13 with an external circuit, specifically, the first wires 14 and the second wires 15 may be wires, may be a section of metal structure, or may be conductive materials such as graphene and doped silicon.
The first electrode layer 12, the second electrode layer 13 and the insulating layer 11 may be fixed in various ways, for example, by pasting, pressing, plating, depositing, or the like.
Of course, the thickness of the insulating layer 11 is related to the breakdown discharge voltage of the edge 121 of the first electrode layer 12 and the edge 131 of the second electrode layer 13, and thus the thickness is not limited to a specific thickness, but is selected according to the discharge voltage requirement of the thin film discharge switch 01. In order to ensure uniformity of the voltage at the edge discharge, the thickness of the insulating layer 11 between the edge 121 of the first electrode layer 12 and the edge 131 of the second electrode layer 13 is determined and uniform, and the thickness of the insulating layer 11 determines the voltage of the breakdown discharge.
In order to ensure that the partial edges 121, 131 of the first and second electrode layers 12, 13 and 11 are all flush, the sheared edges may be formed into two parallel edges 121, 131 of the first and second electrode layers 12, 13 by shearing, and a breakdown discharge occurs at the edges of the two electrode layers. In addition, by precisely controlling the processing precision, it is also sufficient that the manufactured structure forms two conductive layer edges parallel to each other directly on the edge of the insulating layer 11 without shearing, as long as it is possible to ensure that the partial edges 121 of the first electrode layer 12, the partial edges 131 of the second electrode layer 13, and the partial edges of the insulating layer 11 are all flush.
This is a problem of the processing technique due to the edge burrs caused during the cutting process, and is also a parallel range specified in the embodiments of the present invention.
The description of the first electrode layer 12 and the second electrode layer 13 with respect to "layer" is not an absolute limitation of the thickness of the first electrode layer 12 and the second electrode layer 13, for example, the thickness of the first electrode layer 12 and the second electrode layer 13 may be 1 μm to 10 mm, preferably 50 μm to 10 mm, regardless of the degree of thinness of the thickness still being regarded as "layer".
The thin film discharge switch 01 provided by the embodiment of the invention relies on the middle insulating layer 11 to fix the shortest distance between the edges of the electrode layers at two sides. The shortest distance between the edge 121 of the first electrode layer 12 and the edge 131 of the second electrode layer 13 is controlled by the thickness of the insulating layer 11, and is almost uniform, that is, the thickness of the insulating layer 11 is uniform and uniform, so that the position where the breakdown discharge can occur can be increased, thereby improving durability while ensuring the stability of the discharge voltage, regardless of the machining error. The principle of stable discharge voltage can be known according to the knowledge of electrical correlation, the voltage of breakdown discharge is directly related to discharge interval, and electrons find the shortest distance in space to transfer. The insulating layer 11 may have a thickness of 1 micron to 1 cm.
Specifically, the edge 121 of the first electrode layer 12, the edge 131 of the second electrode layer 13, and the edge of the insulating layer 11 are all flush.
That is, the peripheral edge 121 of the first electrode layer 12 and the peripheral edge 131 of the second electrode layer 13 achieve discharge, and at the same time, the peripheral edge of the insulating layer 11 is ensured to be flush with the first electrode layer 12 and the second electrode layer 13, so that the whole first electrode layer 12, the whole second electrode layer 13 and the whole insulating layer 11 form a structure for performing discharge and discharge breakdown in the thin film discharge switch 01 provided by the embodiment of the invention.
As shown in fig. 6a to fig. 6d, of course, there may be various alternative manners regarding the structure of the insulating layer 11 in the thin film discharge switch 01 according to the embodiment of the present invention, which are specifically:
in the first embodiment, the first surface shape of the insulating layer 11 is the same as the second surface shape.
Of course, the shapes of the first surface and the second surface of the insulating layer 11 may be a regular symmetrical structure such as a triangle, a quadrilateral polygon, or an irregular polygonal structure; for example, the structure may be a regular symmetrical structure such as a circular shape, an elliptical shape, or a circular arc shape such as a circular ring, or an irregular symmetrical circular arc structure. For example, as shown in fig. 6e, the insulating layer is in a ring hollow structure, that is, is a perforated insulating layer, and the surfaces of two sides of the perforated insulating layer are covered with a first electrode layer and a second electrode layer, where the surfaces and edges of the upper and lower electrode layers with a circle of holes are used as the edges of the electrode layers, and after the voltage between the two electrode layers reaches the threshold voltage of breakdown discharge between electrode edges by using the breakdown discharge principle, the breakdown discharge occurs.
The first electrode layer 12 disposed on the first surface of the insulating layer 11, and the second electrode layer 13 disposed on the second surface of the insulating layer 11 may have the same shape as the first surface and the second surface of the insulating layer 11, but the first electrode layer 12 and the second electrode layer 13 may have different shapes from the first surface and the second surface of the insulating layer 11.
In the second embodiment, the shape of the first surface of the insulating layer 11 is different from the shape of the second surface.
Of course, the first surface shape of the insulating layer 11 may be a regular symmetrical structure such as a triangle, a quadrilateral polygon, or an irregular polygonal structure; for example, the structure may be a regular symmetrical structure such as a circular shape, an elliptical shape, or a circular arc shape such as a circular ring, or an irregular symmetrical circular arc structure.
The second surface shape of the insulating layer 11 may be a regular symmetrical structure such as a triangle, a quadrangular polygon, or the like, or may be an irregular polygonal structure; for example, the structure may be a regular symmetrical structure such as a circular shape, an elliptical shape, or a circular arc shape such as a circular ring, or an irregular symmetrical circular arc structure.
The first electrode layer 12 disposed on the first surface of the insulating layer 11, and the second electrode layer 13 disposed on the second surface of the insulating layer 11 may have the same shape as the first surface and the second surface of the insulating layer 11, but the first electrode layer 12 and the second electrode layer 13 may have different shapes from the first surface and the second surface of the insulating layer 11.
The working principle of the thin film discharge switch 01 provided by the embodiment of the invention is that the insulating layer 11 with specific thickness in the middle, electrode layers on two sides and a wiring structure with a conductive function for connecting the two sides are adopted. After the combination, the upper, middle and lower electrode layer-insulating layer 11-electrode layer are made to be flush by cutting or other means, so that the flush edges expose 2 parallel electrode layer edges for forming a discharge structure with the discharge interval controlled by the insulating layer 11.
As shown in fig. 7, fig. 7 is a schematic diagram illustrating a relationship between the thickness of the insulating layer 11 and the discharge voltage of the thin film discharge switch 01 according to the embodiment of the present invention.
Optionally, the material of the first electrode layer 12 includes at least one of a metal, a semiconductor, graphite, or a conductive organic matter; and/or the material of the second electrode layer 13 includes at least one of metal, semiconductor, graphite, or conductive organic matter.
The first electrode layer 12 and the second electrode layer 13 are made of a material that is easy to conduct electricity, and are attached to both sides of the insulating layer 11 to perform a conductive function, and the material is as follows: metal sheets, metal films, metal tapes, metal films formed by surface coating, organic conductive materials, graphite layers, graphene films and other materials which are easy to conduct.
Optionally, the material of the insulating layer 11 includes at least one of plastic, wood, stone, glass, paper, or cloth.
The insulating layer 11 is a material which is not easily conductive and has a high dielectric constant, and has a function of isolating a charge breakdown path in the middle and allowing a resistance charge to move through the insulating layer 11, and is mainly used in a film form with a certain thickness in the embodiment of the invention, and the material is as follows: PVC, PTFE, PFA, FEP, PP other plastics, wood, glass, siO 2 Insulating substances such as precious stones.
The thin film discharge switch provided by the embodiment of the invention further comprises a shell with a containing cavity, and the switch structure is positioned in the containing cavity.
The switch structure 1 in the accommodating cavity of the outer shell is used as a core part for realizing on-off of the film discharge switch 01 provided by the embodiment of the invention, and in order to ensure better work of the core part, the switch structure 1 is not easily damaged, and is protected from external impact, moisture, abrasion, corrosion and the like by the outer shell. In particular, the material of the housing may include plastic, wood, metal, and the like.
Of course, a filling layer may or may not be filled between the housing and the switch structure 1.
In a specific embodiment, a filling layer is provided between the housing and the switch structure 1. The dielectric constant of the filling layer is smaller than that of the insulating layer.
The filling layer can be filled with gas or liquid with a relative dielectric constant smaller than 2, and is used for stabilizing the protection switch structure 1, corrosion resistance and the like, and adjusting and improving the functionality of the discharge parameters, such as adjusting the discharge voltage, reducing the energy loss of discharge and the like on the premise that the discharge interval of the switch structure 1 is fixed. Of course, also includes evacuating the interior gas or liquid to a vacuum.
Since the thin film discharge switch 01 provided by the embodiment of the invention can be manufactured in a size range of 1 micron to 2 cm, wherein 1 micron is the limit of miniaturization, the structure of the thin film discharge switch 01 is reduced and refined.
In a second aspect, an embodiment of the present invention provides an energy management circuit applied to a friction nano-generator 06, including:
a temporary energy storage unit 02, an energy storage unit 03, a rectifier 04, a diode 07, an inductor 05 and a thin film discharge switch 01 according to any one of the first aspect;
the first end of the rectifier 04 is respectively connected with the first output end of the friction nano generator 06, the first end of the thin film discharge switch 01 and the first end of the temporary energy storage unit 02;
the second end of the rectifier 04 is respectively connected with the second output end of the friction nano generator 06, the second end of the temporary energy storage unit 02, the first end of the diode 07 and the first end of the energy storage unit 03;
the second end of the film discharge switch 01 is respectively connected with the second end of the diode 07 and the first end of the inductor 05;
a second terminal of the inductor 05 is connected to a second terminal of the energy storage unit 03.
Here, as shown in fig. 8, first, the thin film discharge switch 01 provided in the embodiment of the present invention is turned off, the friction nano generator 06 generates an ac electric signal, the ac electric signal is changed into a dc electric signal by the rectifier 04, the dc electric signal is stored in the temporary energy storage unit 02, the electric charge input by the rectifier 04 is temporarily stored by the temporary energy storage unit 02, that is, the energy storage capacitor, so as to achieve the function of raising the voltage, and since the thin film discharge switch 01 has the function of turning off the high voltage connection at a low voltage, when the voltage approaches the maximum value, all the electric charges are instantaneously released to break down the insulating layer 11 in the thin film discharge switch 01 provided in the embodiment of the present invention, so that the thin film discharge switch 01 is connected and finally stored in the energy storage unit 03.
Of course, in fig. 8, an inductor 05 is disposed between the second end of the thin film discharge switch 01 and the second end of the energy storage unit 03 according to the embodiment of the present invention, where the inductor 05 is a structure for temporarily storing energy of a large current pulse, and can temporarily convert energy into magnetic energy and then convert the magnetic energy into electric energy to store the electric energy in the energy storage unit 03.
Specifically, the rectifier 04 is a rectifier bridge or diode.
The core principle of the energy management circuit provided by the embodiment of the invention is realized according to the formula dE= VdQ, and the maximum energy E is transferred max ＝0.5*V max *Q max In this case, since E is energy, V is voltage, and Q is charge amount, the voltage before discharging the friction nano-generator 06 is increased as much as possible, and the charge amount transferred during discharging is increased as much as possible, so that the energy transfer amount can be increased.
As shown in fig. 9, in order to obtain the efficiency of the nano friction generator after using the thin film discharge switch 01 provided by the embodiment of the present invention, the friction nano generator 06 stores energy into the energy storage unit 03 through the thin film discharge switch 01, the vertical axis is the voltage of the energy storage unit 03, and the higher the voltage is the more energy is stored, wherein the higher the thickness of the thin film discharge switch 01 is reflected on the premise that breakdown can occur, the faster the speed of storing energy is.
It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (30)
1. A thin film discharge switch for an energy management circuit, the thin film discharge switch having a function of disconnecting high voltage from low voltage, comprising:
a switch structure;
wherein the switch structure comprises an insulating layer having a first surface and a second surface parallel to the first surface;
a first electrode layer disposed on a first surface of the insulating layer;
the second electrode layer is arranged on the second surface of the insulating layer;
the orthographic projection of the first electrode layer on the first surface of the insulating layer is at least partially overlapped with the orthographic projection of the second electrode layer on the first surface of the insulating layer;
the partial edges of the first electrode layer, the second electrode layer and the insulating layer are all flush, so that the distance between the partial edges of the first electrode layer and the second electrode layer is ensured, and the breakdown discharge threshold voltage between the edges of the first electrode layer and the second electrode layer is determined;
the first wiring is electrically connected with the first electrode layer;
the second wiring is electrically connected with the second electrode layer;
when the voltage of the first electrode layer and the second electrode layer reach a breakdown threshold voltage, the edge of the first electrode layer and the edge of the second electrode layer break down to realize instant conduction of the thin film discharge switch.
2. The thin film discharge switch of claim 1, wherein edges of the first electrode layer, edges of the second electrode layer, and edges of the insulating layer are all flush.
3. The thin film discharge switch of claim 2, wherein the first surface shape of the insulating layer is the same as the second surface shape.
4. A thin film discharge switch according to any one of claims 1 to 3, wherein the first surface of the insulating layer is polygonal in shape; and/or, the shape of the second surface of the insulating layer is polygonal.
5. A thin film discharge switch according to any one of claims 1 to 3, wherein the first surface of the insulating layer has a circular arc shape; and/or, the second surface of the insulating layer is arc-shaped.
6. A thin film discharge switch according to any one of claims 1 to 3, wherein the material of the first electrode layer comprises at least one of a metal, a semiconductor, graphite or a conductive organic substance; and/or the material of the second electrode layer comprises at least one of metal, semiconductor, graphite or conductive organic matter.
7. The thin film discharge switch of claim 4, wherein the material of the first electrode layer comprises at least one of a metal, a semiconductor, graphite, or a conductive organic material; and/or the material of the second electrode layer comprises at least one of metal, semiconductor, graphite or conductive organic matter.
8. The thin film discharge switch of claim 5, wherein the material of the first electrode layer comprises at least one of a metal, a semiconductor, graphite, or a conductive organic material; and/or the material of the second electrode layer comprises at least one of metal, semiconductor, graphite or conductive organic matter.
9. A thin film discharge switch according to any one of claims 1-3, wherein the material of the insulating layer comprises at least one of plastic, wood, stone, glass, paper, cloth, organic polymer or other insulating substance.
10. The thin film discharge switch of claim 4, wherein the material of the insulating layer comprises at least one of plastic, wood, stone, glass, paper, cloth, organic polymer, or other insulating substance.
11. The thin film discharge switch of claim 5, wherein the material of the insulating layer comprises at least one of plastic, wood, stone, glass, paper, cloth, organic polymer, or other insulating substance.
12. A membrane discharge switch according to any one of claims 1-3, further comprising a housing having a receiving cavity, the switch structure being located within the receiving cavity.
13. The membrane discharge switch of claim 4 further comprising a housing having a receiving cavity, the switch structure being located within the receiving cavity.
14. The membrane discharge switch of claim 5 further comprising a housing having a receiving cavity, the switch structure being located within the receiving cavity.
15. The membrane discharge switch of claim 6 further comprising a housing having a receiving cavity, the switch structure being located within the receiving cavity.
16. The membrane discharge switch of claim 7 or 8, further comprising a housing having a receiving cavity, the switch structure being located within the receiving cavity.
17. The membrane discharge switch of claim 9 further comprising a housing having a receiving cavity, the switch structure being located within the receiving cavity.
18. The membrane discharge switch of claim 12 wherein a fill layer is disposed intermediate the outer envelope and the switch structure.
19. The thin film discharge switch of claim 18, wherein the fill layer is a gas, a liquid, or a material having a relative dielectric constant less than 2.
20. A thin film discharge switch according to any one of claims 1-3, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
21. The thin film discharge switch of claim 4, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
22. The thin film discharge switch of claim 5, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
23. The thin film discharge switch of claim 6, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
24. The thin film discharge switch of claim 7 or 8, wherein the thickness of the first electrode layer or the second electrode layer is 1 μm to 10 mm;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
25. The thin film discharge switch of claim 9, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
26. The thin film discharge switch of claim 10 or 11, wherein the thickness of the first electrode layer or the second electrode layer is 1 μm to 10 mm;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
27. The thin film discharge switch of claim 12, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
28. The thin film discharge switch of any one of claims 13-15, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
29. The thin film discharge switch of claim 16, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
30. The thin film discharge switch of claim 17 or 18, wherein the thickness of the first electrode layer or the second electrode layer is 1 micron to 10 millimeters;
and/or the insulating layer has a thickness of 1 micron to 1 cm.
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| JP5971416B2 (en) * | 2013-06-24 | 2016-08-17 | 株式会社村田製作所 | ESD protection device |
| CN204089762U (en) * | 2014-08-10 | 2015-01-07 | 纳米新能源（唐山）有限责任公司 | Film sound-controlled switching device and apply its system |
| CN212414748U (en) * | 2020-09-16 | 2021-01-29 | 贵州中烟工业有限责任公司 | Atomizer and electronic cigarette using same |
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