CN114242700A - Display substrate and display device - Google Patents
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- CN114242700A CN114242700A CN202111446172.8A CN202111446172A CN114242700A CN 114242700 A CN114242700 A CN 114242700A CN 202111446172 A CN202111446172 A CN 202111446172A CN 114242700 A CN114242700 A CN 114242700A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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Abstract
The application discloses display substrate and display device, display substrate includes basic unit and emitting diode, at each emitting diode's keeping away from one side of basic unit is provided with the light modulation piece, and wherein the light modulation piece has relative income plain noodles that sets up and goes out the plain noodles and centers on the total reflection face that the side of light modulation piece and established, wherein go into the plain noodles orientation emitting diode, go out the plain noodles and keep away from emitting diode, the total reflection face can incide via first surface extremely the light total reflection of total reflection face extremely go out the plain noodles, and then emitting diode launches extremely the light of going into the plain noodles by it jets out to go out the plain noodles. The display substrate and the display device can increase the light extraction efficiency of the light-emitting diode, improve the energy efficiency and improve the crosstalk of the color conversion display.
Description
Technical Field
The application relates to the technical field of display, in particular to a display substrate and a display device which can improve light extraction efficiency and light extraction efficiency simultaneously.
Background
The MiniLED and MicroLED displays have the advantages of high brightness, wide color gamut, good reliability, long service life, high response speed, low energy consumption and the like, and are the main development direction of the display industry at present. However, with the increase of the panel size and the resolution, how to further reduce the energy efficiency and improve the brightness of the display device becomes a problem to be solved urgently.
Fig. 1 is a first schematic diagram of a conventional display substrate, and fig. 2 is a light path diagram of the light emitting diode in fig. 1. As shown in fig. 1 and 2, in the conventional display device 800, a crosstalk phenomenon occurs between adjacent light emitting diodes 810 due to the dispersion of light emission of the light emitting diodes 810. Particularly, in a full-color display device realized by matching MiniLED/MicroLED with a color conversion layer, the development of the display device is restricted by the crosstalk phenomenon caused by the light-emitting dispersibility of the LED.
Fig. 3 is a second embodiment of a conventional display substrate. In the display device 900 shown in fig. 3, a color conversion layer 920 is disposed on the light emitting diodes 910, and a blocking material 921 is disposed in the color conversion layer 920, wherein the blocking material 921 corresponds to a region between the light emitting diodes 910 to absorb side light emitted from the light emitting diodes 910. Obviously, the addition of the blocking material 921 in the color conversion layer 920 can solve the crosstalk phenomenon in the MiniLED/micro LED matched color conversion layer, but this also greatly reduces the energy efficiency of the LED.
Therefore, it is desirable to provide a display substrate and a display device to solve the above technical problems.
Disclosure of Invention
In order to solve the above technical problems, the present application provides a display substrate and a display device, which can increase the light extraction efficiency of the light emitting diode, improve the energy efficiency, further improve the brightness of the display device, and also improve the crosstalk problem of the color conversion display.
In order to achieve the above object, the display substrate and the display device according to the present application adopt the following technical solutions.
The application provides a display substrate, which comprises a base layer and a plurality of light-emitting diodes arranged on the base layer, wherein a light modulation block is arranged on one side of each light-emitting diode, which is far away from the base layer, and the light modulation block is provided with a light incident surface, a light emergent surface and a total reflection surface;
the light incident surface faces the light emitting diode;
the light emitting surface is far away from the light emitting diode, and the light emitting surface and the light incident surface are arranged oppositely;
the total reflection surface is arranged around the side surface of the light adjusting block and can totally reflect the light rays incident to the total reflection surface through the light incident surface to the light emergent surface;
the orthographic projection of the light emitting diode on the light adjusting block falls on the light incident surface, and the light rays emitted to the light incident surface by the light emitting diode are emitted by the light emergent surface.
Optionally, in some embodiments of the present application, a substrate is disposed on a side of each of the light emitting diodes away from the base layer, and the light adjusting block is configured by the substrate;
alternatively, the light-adjusting block is made of an encapsulating material, and the light-adjusting block is configured to encapsulate the light-emitting diode.
Optionally, in some embodiments of the present application, the material of the substrate is a sapphire material.
Optionally, in some embodiments of the present application, the total reflection surface connects the light incident surface and the light exit surface, and the total reflection surface forms one or more adjacent chamfered surfaces at a side edge close to the light incident surface;
or the total reflection surface is an inclined surface connecting the light incident surface and the light emergent surface.
Optionally, in some embodiments of the present application, the chamfered surface or the inclined surface forms a preset angle with a plane where the light incident surface is located, and the preset angle ranges from 20 ° to 70 °.
Optionally, in some embodiments of the present application, a length of one or more of the chamfered surfaces in a thickness direction of the light adjusting block is 5 μm to 30 μm.
Optionally, in some embodiments of the present application, a filling structure is further disposed on the base layer, the filling structure has a refractive index smaller than that of the light adjusting block, and:
when the light incident surface of the light adjusting block is packaged on the upper surface of the light emitting diode, the filling structure surrounds the side surface of the light emitting diode and the total reflection surface of the light adjusting block; alternatively, the first and second electrodes may be,
when the light incident surface of the light adjusting block wraps the upper surface and the side surface of the light emitting diode, the total reflection surface surrounds the light emitting diode, and the filling structure surrounds the total reflection surface.
In a preferred embodiment, the light modulation block is configured by the substrate, the total reflection surface connects the light incident surface and the light emitting surface, the total reflection surface forms one or more adjacent chamfered surfaces at a side edge close to the light incident surface, the light incident surface of the light modulation block is encapsulated on the upper surface of the light emitting diode, and the filling structure surrounds the side surface of the light emitting diode and the one or more adjacent chamfered surfaces.
In a preferred embodiment, the light modulation block is made of an encapsulation material, the total reflection surface connects the light incident surface and the light emitting surface, the total reflection surface forms one or more adjacent chamfered surfaces at a side edge close to the light incident surface, the light incident surface of the light modulation block is encapsulated on the upper surface of the light emitting diode, and the filling structure surrounds the side surface of the light emitting diode and the one or more adjacent chamfered surfaces.
In a preferred embodiment, the light-adjusting block is made of an encapsulating material, the total reflection surface is an inclined surface connecting the light incident surface and the light exit surface, the light incident surface of the light-adjusting block wraps the upper surface and the side surface of the light-emitting diode, the total reflection surface surrounds the light-emitting diode, and the filling structure surrounds the total reflection surface.
Optionally, in some embodiments of the present application, the display substrate includes a transparent resin layer, and the transparent resin layer is disposed on a side of the light-adjusting block away from the base layer;
and the refractive index of the transparent resin layer is different from the refractive index of the light adjusting block.
Optionally, in some embodiments of the present application, the display substrate further includes a color conversion layer disposed on a side of the light adjusting block away from the base layer.
Correspondingly, the application also provides a display device, which adopts the display substrate.
Compared with the prior art, according to the display substrate and the display device, the light adjusting block is arranged on one side, far away from the base layer, of each light emitting diode, the total reflection surface arranged around the side surface of the light adjusting block can be used for changing the propagation path of light rays incident into the total reflection surface through the light incident surface, so that the light rays incident into the light adjusting block through the light incident surface of each light emitting diode are emitted from the light emitting surface of the light adjusting block, the emitting ratio of the light rays on the light emitting surface of the light adjusting block is improved, the light extraction efficiency is increased, the energy efficiency of each light emitting diode is improved, and the brightness of a display device is further improved; meanwhile, the light adjusting block prevents the light rays on the top surface of the light emitting diode from emitting to the adjacent light emitting diode, and the crosstalk of the color conversion display can be improved. In addition, by configuring the substrate 50 layer of the light emitting diode as a light modulation block or multiplexing the light modulation block as a package structure, on one hand, the manufacturing process is simple, and the increase of the manufacturing process of the light emitting diode is not caused, and on the other hand, the increase of the thickness of the light emitting diode is not caused.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a first schematic view of a conventional display substrate.
Fig. 2 is a light path diagram of the light emitting device of fig. 1.
Fig. 3 is a second schematic diagram of a conventional display substrate.
Fig. 4 is a schematic diagram of a display substrate according to a first embodiment of the present disclosure.
Fig. 5 is a schematic diagram of a first embodiment of the light emitting diode in fig. 4.
Fig. 6 is a light path diagram of the light emitting diode of fig. 5.
Fig. 7 is a perspective view of the light emitting diode of fig. 5.
Fig. 8 is a light pattern distribution curve area of the light emitting diode of fig. 5, wherein a curve M is a case where the light emitting diode is provided with a dimming block, and a curve N is a case where the light emitting diode is not provided with a dimming block.
Fig. 9 is a schematic diagram of a second embodiment of the light emitting diode in fig. 4.
Fig. 10 is a schematic view of a display substrate according to a second embodiment of the present disclosure.
Fig. 11 is a schematic view of a display substrate according to a third embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
In order to solve the problem that the light extraction efficiency and the energy efficiency of the existing display device are low, the present application provides a display substrate, where the display substrate includes a base layer 10 and light emitting diodes 20 arranged on the base layer 10 in an array, and a light modulation block 30 is disposed on the light emitting side of each light emitting diode 20.
Referring to fig. 4, the light modulation block 30 has a light incident surface 31, a light emitting surface 32 and a total reflection surface 33, wherein the light incident surface 31 faces the light emitting diode 20, the light emitting surface 32 is away from the light emitting diode 20, the light emitting surface 32 is disposed opposite to the light incident surface 31, the total reflection surface 33 is disposed around a side surface of the light modulation block 30, and the total reflection surface 33 can totally reflect the light incident to the total reflection surface 33 through the light incident surface 31 to the light emitting surface 32.
With reference to fig. 4, the orthographic projection of the light emitting diode 20 on the light adjusting block 30 falls on the light incident surface 31, and the light rays emitted from the light emitting diode 20 to the light incident surface 31 are emitted from the light emitting surface 32.
Referring to fig. 6, in the solution of the present application, after the light of the light emitting diode 20 is incident to the light adjusting block 30 through the light incident surface 31, the light incident on the surface of the light adjusting block is totally reflected to the light emitting surface 32 by the total reflection surface 33, so that the propagation direction of the light incident on the side surface of the light adjusting block 30 can be changed, no light is emitted from the side of the light adjusting block 30, the light incident to the light adjusting block 30 through the light incident area is emitted from the light emitting surface 32, and finally the proportion of the light emitted from the light emitting surface 32 of the light adjusting block 30 can be increased, so as to obtain a light emitting diode with low energy consumption and high luminous efficiency.
Referring to fig. 8, a curve M shows a case where the light-adjusting block 30 is disposed on the light-emitting side of the led 20, and a curve N shows a case where the light-adjusting block 30 is not disposed on the light-emitting side of the led 20. Obviously, the light adjusting block 30 can increase the ratio of the light emitting diode 20, increase the light emitting intensity of the light emitting diode, and is beneficial to obtaining a light emitting diode with low energy consumption and high luminous efficiency.
Specifically, the light emitting diode is a Micro light emitting diode, such as, but not limited to, a Micro LED or a Mini LED. It should be understood that the light emitting diodes of the present application are not limited to miniature light emitting diodes and that certain embodiments may also be applied to other miniature semiconductor devices designed in such a way as to perform a predetermined electronic function (e.g., diode, transistor, integrated circuit) or photonic function (LED, laser) in a controlled manner. In addition, the application also does not limit the specific structure of the micro light emitting diode. For example, in the case of Micro LEDs, the light emitting diodes may have the same side electrode structure or the vertical electrode structure.
Furthermore, the present application also does not limit the light emitting type of the light emitting diode. Specifically, the light emitting diode may be one of a red light emitting diode, a green light emitting diode, or a blue light emitting diode.
When the LED is used specifically, the LED can be directly used as a light-emitting unit to realize a display effect, and can also be matched with a color conversion layer to realize full-color display.
As shown in fig. 5, the light emitting diode 20 may emit light. The specific structure and type of the led 20 are not limited in this application.
For example, the light emitting diode 20 includes an epitaxial layer, a first electrode, and a second electrode. The epitaxial layer includes a first semiconductor layer, a multiple quantum well layer, a second semiconductor layer, and a diffusion layer. The first electrode and the multi-quantum well layer are arranged on the first semiconductor layer at intervals; the second semiconductor layer is arranged on the multiple quantum well layer and covers the multiple quantum well layer, and the second electrode is arranged on the multiple quantum well layer.
In a specific implementation, the first electrode is an N-electrode or a P-electrode, and the second electrode is a P-electrode or an N-electrode, respectively.
The specific material of the first semiconductor layer and the second semiconductor layer is not limited in this application, and the first semiconductor layer may be N-type GaN, P-type GaN, or other GaAs material or GaP material. Correspondingly, the second semiconductor layer may be P-type GaN, N-type GaN, or other GaAs material, GaP material, or the like. For convenience of illustration in this embodiment, optionally, the first semiconductor layer is N-type GaN, and the second semiconductor layer is P-type GaN.
Specifically, the plurality of light emitting diodes 20 are independent of each other and arranged in a matrix. The plurality of light emitting diodes 20 includes at least one of a red light emitting diode, a green light emitting diode, and a blue light emitting diode.
Wherein a plurality of the light emitting diodes 20 are independently provided. In some embodiments, black oil or white oil is filled between the adjacent light emitting diodes 20 to prevent the problem of light crosstalk between the adjacent light emitting diodes caused by the side light emission of the light emitting diodes 20.
Referring to fig. 4 to 7, the light adjusting block 30 is disposed on a side of the light emitting diode 20 away from the base layer 10, and the light adjusting block 30 has a light incident surface 31 and a light emitting surface 32 opposite to each other along a thickness direction thereof, and a total reflection surface 33 surrounding a side surface of the light adjusting block 30.
Referring to fig. 4 and 5, the light incident surface 31 faces the light emitting diode 20, and the light incident surface 31 corresponds to the light emitting diode 20. In other words, the orthographic projection of the led 20 on the light adjusting block 30 falls completely within the range of the light incident surface 31. More specifically, the outer edge of the light incident surface 31 surrounds the periphery of the orthographic projection of the light emitting diode 20 on the light adjusting block 30, or the outer edge of the light incident surface 31 coincides with the edge of the upper surface of the light emitting diode 20.
Referring to fig. 4, 9 and 10, the light incident surface 31 of the light adjusting block 30 covers the upper surface of the light emitting diode 20.
In fig. 11, the light incident surface 31 of the light adjusting block 30 wraps the upper surface and the side surface of the light emitting diode 20. Alternatively, an opening capable of being closed by the base layer 10 is formed on the light incident surface 31 of the light adjusting block 30, and the light emitting diode 20 is located in the opening. Obviously, the light emitted from the side surface and the top surface of the led 20 can exit from the light exit surface 32 of the light adjusting block 30.
From the light emitting effect, the light emitted from the side surface and the top surface of the led 20 can exit from the light exiting surface 32 of the light adjusting block 30. At this time, the light emitted from the side surface and the upper surface of the led 20 is emitted from the light emitting surface 32 of the light adjusting block 30, so that the energy efficiency and the light extraction efficiency of the led 20 are greatly increased, and the crosstalk problem is fundamentally solved. Meanwhile, in terms of the packaging effect, in the light emitting diode 20 of the embodiment, the top surface and the side surface of the whole light emitting diode 20 are both sealed by the light adjusting block 30, and the sealing effect is obviously better.
Referring to fig. 4, the total reflection surface 33 is disposed around the side surface of the light adjusting block 30, and the total reflection surface 33 can totally reflect the light incident from the light incident surface 31 to the total reflection surface 33 to the light emitting surface 32.
Referring to fig. 5, 9 and 11, the present application provides two different embodiments of the total reflection surface. In fig. 5 and 9, the total reflection surface 33a connects the light incident surface 31 and the light emitting surface 32, and the total reflection surface 33a forms one or more adjacent chamfered surfaces 331 at the side near the light incident surface 31.
In fig. 11, the total reflection surface 33b is an inclined surface connecting the light incident surface 31 and the light emitting surface 32. Wherein the inclined plane is an inclined plane, and the light adjusting block 30 is of an inverted trapezoidal structure as a whole. In other embodiments, the inclined surface may be a convex curved surface.
Specifically, the chamfered surface 331 or the inclined surface forms a preset angle α with the plane of the light incident surface 31. By setting the preset angle α, the chamfer surface can totally reflect the light rays incident from the light incident surface 31 to the surface thereof to the light emitting surface 32. Preferably, the preset angle α ranges from 20 ° to 70 °.
Referring to fig. 4 to 9, the length of one or more chamfered surfaces 331 along the thickness direction of the light adjusting block 30 is in a range of 5 μm to 30 μm.
Referring to fig. 4, the light emitting surface 32 is far away from the light emitting diode 20, and the light emitting surface 32 and the light incident surface 31 are disposed opposite to each other.
In the present embodiment, the light emitting surface 32 is a plane. In other embodiments, the light emitting surface 32 may be configured in other shapes, such as an arc convex surface, which is not limited in this application.
The structure and the embodiment of the light adjusting block 30 are described above. However, fig. 5, 9, 10, and 11 are exemplary embodiments of the light modulation block 30 of the present application, and the embodiments of the light modulation block 30 of the present application are not limited thereto. In specific implementation, on the premise that the total reflection surface can completely reflect the light incident from the light incident surface 31 to the light emitting surface 32, the arrangement of the light-modulating blocks 30 can be adjusted according to the specific structures of the light-modulating blocks 30 and the display substrate 100.
The specific configuration of the light adjusting block 30 in the display substrate 100 will be further described below.
Referring to fig. 5 to 11, the embodiment of the present application provides a case that the light-adjusting block 30 is configured by functional film layers in the display substrate 100. It should be noted that fig. 5 to 11 are only schematic configurations of the light adjusting block 30, and the configurations of the light adjusting block 30 in the present application are not limited thereto, for example, the light adjusting block 30 may also be a film structure additionally disposed on the light emitting diode 20.
First, referring to fig. 5 to 9, a substrate 50 is disposed on a side of the light emitting diode 20 away from the base layer 10, and the light adjusting block 30 is configured by the substrate 50.
In the embodiments of fig. 5 to 9, the substrate 50 is disposed on the light emitting side of the light emitting diode 20, and the substrate 50 is configured as the light adjusting block 30. Wherein the substrate 50 is a growth substrate (or, alternatively, an original substrate) used to fabricate the light emitting diode. The growth substrate may be understood as a substrate 50 on which the layers of the light emitting diode 20 are fabricated or grown, rather than another temporary substrate 50 to which the light emitting diode has been transferred. That is, the light-adjusting block 30 may be configured by a growth substrate of the light-emitting diode 20.
In a preferred embodiment, the substrate 50 is a sapphire substrate.
For example, for the light emitting diode 20 of the Mini LED, it is generally not necessary to peel off the growth substrate for growing the epitaxial layer. At this time, after the dicing, the processing and molding of the total reflection surface 33 may be performed on the substrate 50 corresponding to the single molded light emitting diode 20 by using an ICP (Inductively Coupled Plasma) process.
Obviously, by directly configuring the substrate 50 as the light adjusting block 30, neither the volume of the light emitting diode 20 is increased nor the process of the light emitting diode 20 is affected, which is also beneficial to reducing the process.
In this case, the etching process may be directly utilized to process and form the total reflection surface 33 on the substrate 50 of the single-formed light emitting diode 20, and the etching process parameters are adjusted and controlled to realize the precise etching of the substrate 50, so as to realize the preparation of the total reflection surface 33, thereby achieving the purpose of arranging the substrate 50 as the light adjusting block 30.
With reference to fig. 4 and fig. 9, in consideration of the actual growth process of the light emitting diode 20 and the difficulty of etching the substrate 50, the light adjusting block 30 is stacked on the upper surface of the light emitting diode 20 through the light incident surface 31 thereof, and the total reflection surface 33 of the light adjusting block 30 is configured with the structure of the total reflection surface 33 a. At this time, it is only necessary to adjust the size of the substrate 50 during the cutting process, and after the cutting is completed, etch one or more chamfered surfaces 331 on the substrate 50 corresponding to the single molded light emitting diode 20 by using the etching process.
In particular, the substrate 50 may be configured as a packaging substrate, i.e. the substrate 50 can be used to package the light emitting diode 20. That is, the light-adjusting block 30 configured by the substrate 50 can also be multiplexed to encapsulate the light-emitting diode 20.
Specifically, a filling structure 40 is disposed on the base layer 10, and the filling structure 40 is matched with the substrate 50 to encapsulate the light emitting diode 20. For a specific configuration of the filling structure 40, please refer to the following, which is not described herein again.
Next, referring to fig. 10 and 11, the light-adjusting block 30 is made of an encapsulation material, and the light-adjusting block 30 is configured to encapsulate the light-emitting diode 20.
For smaller size light emitting diodes 20, such as Micro LEDs, the growth substrate typically needs to be peeled off due to its thicker thickness. At this time, the encapsulation layer of the display substrate 100 may be configured as the light-adjusting block 30, that is, the light-adjusting block 30 may be multiplexed into an encapsulation structure. In this case, the light adjusting block 30 has both a light adjusting function and a packaging function.
Referring to fig. 10 to fig. 11, the present embodiment further provides two embodiments of multiplexing the light-adjusting block 30 into a package structure. In order to ensure the packaging effect, a filling structure 40 is disposed on the base layer 10, and the filling structure 40 is matched with the light-adjusting block 30 to package the light-emitting diode 20. That is, the filling structure 40 and the light-adjusting block 30 are used for realizing the encapsulation, and no additional encapsulation layer is required. By the design, the thickness of the panel is not influenced, and the light and thin display substrate is facilitated.
With continued reference to fig. 10, the light adjusting block 30 is stacked on the light emitting diode 20 through the light incident surface 31 thereof. At this time, the light adjusting block 30 covers only the upper surface of the light emitting diode 20, and the light adjusting block 30 is provided with a total reflection surface 33 a.
With continued reference to fig. 10, the filling structure 40 surrounds the side surface of the led 20 and the total reflection surface 33a of the light-adjusting block 30. Preferably, the filling structure 40 surrounds one or more of the chamfered surfaces 331.
Referring to fig. 11, in the present embodiment, the light incident surface 31 of the light adjusting block 30 covers the upper surface and the side surface of the light emitting diode 20. An opening which can be sealed by the base layer 10 is formed on the light incident surface 31 of the light adjusting block 30, and the light emitting diode 20 is located in the opening.
Referring to fig. 11, at this time, the light-adjusting block 30 is configured with a total reflection surface 33b, the total reflection surface 33b surrounds the periphery of the light-adjusting block 30 and the periphery of the total reflection surface of the filling structure 40.
In terms of the packaging effect, in the light emitting diode 20 of the present embodiment, the top surface and the side surface of the whole light emitting diode 20 are both sealed by the light adjusting block 30, and meanwhile, the whole light emitting diode 20 is also sealed by the filling structure 40, so that the sealing effect is significantly better.
Specifically, the refractive index of the light-adjusting block 30 is greater than the refractive index of the filling structure 40. It can be understood that, when light enters the optically thinner medium from the optically denser medium, that is, enters the medium with the lower refractive index from the medium with the higher refractive index, if the incident angle of the light on the interface between the optically denser medium and the optically thinner medium is larger than the critical angle of total reflection, the light will be totally reflected at the interface and return to the optically denser medium, so that the light cannot enter the optically thinner medium.
In a preferred embodiment, the refractive index of the light-adjusting block 30 is greater than 1.5, and the refractive index of the filling structure 40 ranges from 1 to 1.2.
Specifically, the filling structure 40 is made of an encapsulating material, and the filling structure 40 can isolate the internal structure of the light emitting diode 2 from air and protect the internal structure of the light emitting diode 20. The encapsulation material may be an organic silicon adhesive material that can be cured at a high temperature to be tightly combined with the light emitting diode 20.
Of course, the encapsulant can be any other suitable material as long as the encapsulant has fluidity before encapsulation and high light transmittance after curing. The curing method of the packaging material may also include cooling curing, light curing, hardening agent curing, and the like, according to the difference of the packaging material.
Referring to fig. 10 and 11, in a specific manufacturing process: firstly, preparing a filling structure 40 on a base layer 10, wherein the filling structure 40 is arranged around the light emitting diode 20; then, an encapsulation material is filled between the light emitting diode 20 and the filling structure 40 to obtain the light-adjusting block 30. That is, the structure and pattern of the light adjusting block 30 may be obtained by the light adjusting structure 40.
Further, the display substrate 100 further includes a transparent resin layer disposed on a side of the light emitting diodes 20 far from the base layer 10 and filled between the adjacent light emitting diodes 20.
Specifically, the refractive index of the transparent resin layer is different from the refractive index of the light-adjusting block 30, and the surface of the transparent resin layer away from the light-adjusting block 30 is a plane, that is, the light-emitting side surface of the transparent resin layer is a plane. Thus, more precise light effect control can be realized, and the reliability of the light emitting diode can be improved.
The shape of the transparent resin layer can be realized by various adhesion molding methods such as compression molding and injection molding. In addition to the adhesion molding method, it depends on the viscosity of the applied resin material and the package shape.
Further, the display substrate 100 further includes a color conversion layer disposed on a side of the light emitting diode 20 away from the base layer 10. In a preferred embodiment, the color conversion layer is disposed on a side of the transparent resin material layer away from the light emitting diode 20.
In a preferred embodiment, the color conversion layer is a quantum dot color conversion layer.
Based on the same concept, the present application also provides a display device including the display substrate 100 of the present application. The display device provided by the embodiment of the application can be a mobile phone, and can also be any electronic product with a display function, including but not limited to the following categories: the mobile terminal comprises a television, a notebook computer, a desktop display, a tablet computer, a digital camera, an intelligent bracelet, intelligent glasses, a vehicle-mounted display, medical equipment, industrial control equipment, a touch interaction terminal and the like, and the embodiment of the application is not particularly limited in this respect.
The display substrate and the display substrate provided in the embodiments of the present application are introduced in detail, and the principles and embodiments of the present application are explained herein by applying specific examples, and the descriptions of the above embodiments are only used to help understand the method and the core ideas of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A display substrate is characterized by comprising a base layer and a plurality of light emitting diodes arranged on the base layer, wherein one side of each light emitting diode, which is far away from the base layer, is provided with a light modulation block, and the light modulation block is provided with a light incident surface, a light emergent surface and a total reflection surface;
the light incident surface faces the light emitting diode;
the light emitting surface is far away from the light emitting diode, and the light emitting surface and the light incident surface are arranged oppositely;
the total reflection surface is arranged around the side surface of the light adjusting block and can totally reflect the light rays incident to the total reflection surface through the light incident surface to the light emergent surface;
the orthographic projection of the light emitting diode on the light adjusting block falls on the light incident surface, and the light rays emitted to the light incident surface by the light emitting diode are emitted by the light emergent surface.
2. The display substrate according to claim 1, wherein a substrate is disposed on a side of each of the light emitting diodes away from the base layer, and the light adjusting block is configured by the substrate;
alternatively, the light-adjusting block is made of an encapsulating material, and the light-adjusting block is configured to be used for encapsulating the light-emitting diode.
3. The display substrate of claim 2, wherein the substrate material is a sapphire material.
4. The display substrate according to claim 1, wherein the total reflection surface connects the light incident surface and the light emitting surface, and the total reflection surface forms one or more adjacent chamfered surfaces at a side edge close to the light incident surface;
or the total reflection surface is an inclined surface connecting the light incident surface and the light emergent surface.
5. The display substrate according to claim 4, wherein the chamfer or the inclined surface forms a preset angle with a plane where the light incident surface is located, and the preset angle ranges from 20 degrees to 70 degrees.
6. The display substrate according to claim 4, wherein a length of the one or more chamfered faces in a thickness direction of the dimming block is 5 μm to 30 μm.
7. The display substrate of claim 1, wherein a fill structure is further disposed on the base layer, the fill structure having a refractive index less than a refractive index of the light-adjusting block, and:
when the light incident surface of the light adjusting block is packaged on the upper surface of the light emitting diode, the filling structure surrounds the side surface of the light emitting diode and the total reflection surface of the light adjusting block; alternatively, the first and second electrodes may be,
when the light incident surface of the light adjusting block wraps the upper surface and the side surface of the light emitting diode, the total reflection surface surrounds the light emitting diode, and the filling structure surrounds the total reflection surface.
8. The display substrate according to claim 1, wherein the display substrate comprises a transparent resin layer disposed on a side of the light-adjusting block away from the base layer;
and the refractive index of the transparent resin layer is different from the refractive index of the light adjusting block.
9. The display substrate of claim 1, further comprising a color conversion layer disposed on a side of the light adjustment block away from the base layer.
10. A display device characterized by using the display substrate according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111446172.8A CN114242700A (en) | 2021-11-30 | 2021-11-30 | Display substrate and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111446172.8A CN114242700A (en) | 2021-11-30 | 2021-11-30 | Display substrate and display device |
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| CN114242700A true CN114242700A (en) | 2022-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111446172.8A Pending CN114242700A (en) | 2021-11-30 | 2021-11-30 | Display substrate and display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023201640A1 (en) * | 2022-04-21 | 2023-10-26 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
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- 2021-11-30 CN CN202111446172.8A patent/CN114242700A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023201640A1 (en) * | 2022-04-21 | 2023-10-26 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
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