CN114242548A - Filament for ion source of ion implanter - Google Patents
Filament for ion source of ion implanter Download PDFInfo
- Publication number
- CN114242548A CN114242548A CN202111321156.6A CN202111321156A CN114242548A CN 114242548 A CN114242548 A CN 114242548A CN 202111321156 A CN202111321156 A CN 202111321156A CN 114242548 A CN114242548 A CN 114242548A
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- Prior art keywords
- filament
- cathode
- ion source
- fastener
- support structure
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 description 36
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Abstract
The invention relates to a filament of ion source for ion implantation machine, the longitudinal section area of its active part is 70-90mm2(ii) a Wherein a cathode fixture for the ion source comprises: a fastener; the fixture is arranged on the periphery of the cathode, a convex block is arranged on the fixture, a connecting hole is formed in the convex block, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and a support structure connected to the bumps by fasteners. The filament of the invention needs to be matched with a novel cathode fixing device for use, and the cathode fixing device cancels a middle rod at the center of the bottom of the cathode cup body, thereby increasing the available space in the cathode cavity; on the basis, the inventor increases the longitudinal sectional area of the active part of the filament by changing the size and the shape of the active part of the filament, reduces the current of the filament, and prolongs the thermion release efficiency of the filament while ensuring the thermion release efficiency of the filamentThe service life of the filament.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a filament of an ion source for an ion implanter.
Background
Ion implantation is a technique for selectively implanting impurity materials into semiconductor materials. After the impurity material is ionized in the ionization chamber, the ions are accelerated to form an ion beam with a set energy, and the ion beam bombards the surface of the wafer and enters the wafer to a depth related to the energy.
The ion implantation process is performed in an ion implanter. An ion implanter generally includes an ion source, a mass spectrometer, an accelerator, and a process chamber. The ion source comprises a cathode and a filament, and hot electrons generated by the filament in the cathode cup bombard ion source gas under the action of an electric field so as to ionize the ion source gas into plasma. The number of hot electrons released by the filament is determined by the filament current and the longitudinal cross-sectional area of the filament portion (equal to the diameter x length of said portion) which mainly serves to emit electrons.
The center of the bottom of the cathode cup of the conventional ion source (as shown in FIG. 1) is provided with an intermediate rod for fixing the cathode, wherein the filament portion mainly serving for electron emission has a longitudinal sectional area of about 52mm2. Since the inner space of the cathode cup is limited and the filament cannot be in contact with the cathode cup and the intermediate rod, the size and shape design of the filament are limited. In the prior art, in order to ensure the efficiency of the filament for releasing hot electrons, the current of the filament is usually large, which accelerates the consumption of the filament, so that the filament is easy to have an open circuit phenomenon, and the service life of the filament is seriously influenced.
Therefore, there is a need for development of a new filament and ion source that can extend the service life of the filament while ensuring the efficiency of thermionic emission from the filament.
Disclosure of Invention
It is an object of the present invention to overcome the disadvantages of the prior art and to provide a new filament for an ion source of an ion implanter. The filament needs to be matched with a novel cathode fixing device for use, the cathode fixing device cancels a middle rod at the center of the bottom of the cathode cup body, and the available space in the cathode cavity is increased; on the basis, the invention increases the longitudinal sectional area of the active part of the filament and reduces the filament current by changing the size and shape of the filament part (the active part of the filament for short) which mainly plays a role of emitting electrons, thereby ensuring the thermoelectron release efficiency of the filament and prolonging the service life of the filament.
It is another object of the present invention to provide an ion source comprising said filament and said cathode fixture.
It is a further object of the present invention to provide an ion implanter including the ion source.
In order to achieve the above object, the present invention provides the following technical solutions.
A filament for ion source of ion implanter has an active part with a longitudinal sectional area of 70-90mm2(ii) a The active part is in a smooth curve shape and is axisymmetric; the shortest distance from the two ends of the active part to the inner side wall of the cathode is equal and is 3-4 mm.
The present invention also provides an ion source for an ion implanter comprising:
a cathode having a cup-shaped structure;
the filament is arranged in the cathode;
the filament clamp is used for fixing the filament; and
a cathode fixture, comprising: a fastener; the fixture is arranged on the periphery of the cathode, a convex block is arranged on the fixture, a connecting hole is formed in the convex block, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and a support structure connected to the bumps by fasteners.
The invention also provides an ion implanter comprising the ion source.
Compared with the prior art, the invention has the beneficial effects that:
the present invention provides a novel filament for an ion source of an ion implanter. The filament needs to be matched with a novel cathode fixing device for use, the cathode fixing device cancels a middle rod at the center of the bottom of the cathode cup body, and the available space in the cathode cavity is increased; on the basis, the invention increases the longitudinal sectional area of the active part of the filament by changing the size and the shape of the active part of the filament, and reduces the current of the filament, thereby ensuring the thermoelectron release efficiency of the filament and prolonging the service life of the filament.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a partial schematic structural view of a conventional ion source.
Fig. 2 is a schematic structural view of the filament of the present invention.
Fig. 3 is a schematic view of the structure of an exemplary cathode holding device of the present invention.
Fig. 4 is a schematic view of another exemplary cathode mounting apparatus according to the present invention.
Description of the reference numerals
100 is a first yoke, 200 is a second yoke, 300 is a first bump, 400 is a second bump, 301 is a first connection hole, 401 is a second connection hole, 500 is a fastener, 601 is a first support structure, 602 is a second support structure, 700 is a snap ring, 800 is a third bump, 801 is a third connection hole, 900 is a fourth bump, 1001 is a third support structure, 1002 is a fourth support structure, 1100 is a filament, and 1200 is a cathode.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The filament active part in the existing ion source has small longitudinal sectional area and large current, accelerates the consumption of the filament, is easy to have a circuit breaking phenomenon, and seriously influences the service life of the filament. Therefore, the invention provides a novel filament for an ion source of an ion implanter, wherein the longitudinal sectional area of an active part of the filament is 70-90mm2(ii) a The active part is in a smooth curve shape and is axisymmetric; the shortest distance from the two ends of the active part to the inner side wall of the cathode is equal and is 3-4 mm.
The filament of the invention needs to be matched with a novel cathode fixing device for use, and the cathode fixing device cancels a middle rod at the center of the bottom of the cathode cup body, thereby increasing the available space in the cathode cavity; on the basis, the invention increases the longitudinal sectional area of the active part of the filament by changing the size and the shape of the active part of the filament, and reduces the current of the filament, thereby ensuring the thermoelectron release efficiency of the filament and prolonging the service life of the filament.
The invention will be further described with reference to the accompanying drawings.
Fig. 2 shows a schematic diagram of the structure of the filament of the present invention. The filament 1100 of the present invention includes straight portions at both ends (not shown in fig. 2) and a curved portion in the middle (i.e., an active portion). Preference is given toThe active part of the filament has a longitudinal section area of 80-90mm2. In the present invention, the longitudinal sectional area of the active portion of the filament is equal to the diameter of the filament multiplied by the actual length of the active portion of the filament. The longitudinal sectional area of the active part of the filament is increased by about 35-73 percent compared with the longitudinal sectional area of the active part of the existing filament, so that the current of the filament is reduced by 35-73 percent compared with the current of the existing filament, thereby reducing the consumption of the filament and prolonging the service life.
In the present invention, the filament may be a wire of a metal material having a uniform thickness. The metal material may be tungsten, molybdenum, a tungsten alloy, a molybdenum alloy, or the like.
Preferably, the active part of the filament of the invention has a physical length of 40-50 mm. Preferably, the filament of the present invention has a diameter of 1.7-1.9 mm. The active part of the filament of the present invention may be smoothly waved. The active portion of the present invention is free of tips to prevent the tip effect from occurring.
The cathode of the present invention may be a cylindrical cup-shaped structure. The internal diameter of the cathode cavity may be 22-26 mm.
In one embodiment, the diameter of the filament of the invention is 1.78mm, the active part of the filament of the invention is smooth and wavy and is axisymmetric, the actual length of the active part of the filament of the invention is 49.42mm, and the longitudinal cross-sectional area of the active part of the filament of the invention is 87.97mm2The shortest distance from the two ends of the active part of the filament to the inner side wall of the cathode is 3.42mm, and the inner diameter of the cavity of the cathode is 24.16 mm.
The present invention also provides an ion source for an ion implanter comprising: a cathode 1200, the cathode 1200 having a cup-shaped structure; a filament 1100 disposed in the cathode 1200; a filament clamp for fixing the filament 1100; and a cathode fixing device comprising: a fastener; the fixture is arranged on the periphery of the cathode, a convex block is arranged on the fixture, a connecting hole is formed in the convex block, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and a support structure connected to the bumps by fasteners.
Fig. 3 shows a schematic view of the structure of an exemplary cathode fixture according to the present invention. Specifically, as shown in fig. 3, the cathode fixing device of the present invention includes: a first yoke 100, wherein a first bump 300 and a second bump 400 are respectively disposed at two ends of the first yoke 100, a first connection hole (not shown in fig. 3) is disposed on the first bump 300, and a second connection hole (not shown in fig. 3) is disposed on the second bump 400; a first lug 300 and a second lug 400 are respectively arranged at two ends of the second hoop 200, the first lug 300 is provided with a first connecting hole 301, and the second lug 400 is provided with a second connecting hole 401; a fastener 500; and a first support structure 601 and a second support structure 602, the first support structure 601 being connected to the first bump 300 by a fastener 500, the second support structure 602 being connected to the second bump 400 by a fastener 500.
In the present invention, the first and second clips 100 and 200 are arc-shaped clips, preferably semicircular clips. The dimensions of the first clip 100 and the second clip 200 match. The inner circumferences of the first yoke 100 and the second yoke 200 are smaller than the outer circumference of the cathode cup, and their widths may be 6 to 10 mm. If a flange is provided at the rim of the cathode cup, the first yoke 100 and the second yoke 200 are preferably provided near the flange to be positioned using the flange. The invention can ensure that the filament is in a proper position in the cathode cup (the distance between the filament and the bottom of the cup is about 3mm) by adjusting the position relation of the support structure, the filament clamp and the linear part of the filament. The material of the first band 100 and the second band 200 of the present invention may be, for example, tungsten alloy, molybdenum alloy, tantalum alloy, or the like.
The first clip 100 has a first protrusion 300 and a second protrusion 400 symmetrically disposed at both ends thereof. The first projection, the first projection 300, the second projection 400 and the first clip 100 may be integrally formed or welded, preferably integrally formed.
The second yoke 200 has a first protrusion 300 and a second protrusion 400 symmetrically disposed at both ends thereof. The first tab 300, the second tab 400 and the second clip 200 may be integrally formed or welded, preferably integrally formed.
The dimensions of the first bump 300 and the second bump 400 are preferably the same to ensure that the cathode fixture of the present invention is a symmetrical structure, thereby advantageously ensuring that the ion implantation concentration is the same for all regions of the material to be implanted with ions.
The fastener 500 of the present invention is preferably a screw.
Fig. 4 shows a schematic view of another exemplary cathode mounting apparatus of the present invention. Specifically, as shown in fig. 4, the cathode fixing device of the present invention includes: the snap ring 700, both ends of the snap ring 700 are respectively provided with a third bump 800, the third bump 800 is provided with a third connecting hole 801, the right middle of the snap ring 700 is provided with a fourth bump 900, and the fourth bump 900 is provided with a fourth connecting hole (not shown in fig. 4); a fastener 500; and a third support structure 1001 and a fourth support structure 1002, the third support structure 1001 being connected to the third bump 800 by a fastener 500, and the fourth support structure 1002 being connected to the fourth bump 900 by a fastener 500.
Preferably, the inner circumference of the snap ring 700 is smaller than the outer circumference of the cathode cup, and the width thereof may be 6 to 10 mm. If a flange is provided at the rim of the cathode cup, a snap ring 700 is preferably provided adjacent to the flange for positioning with the flange. The invention ensures that the filament is in place in the cathode cup (the filament is about 3mm from the bottom of the cup) by adjusting the length of the support structure, filament clamp, or straight portion of the filament (including straight portions and curved portions). The material of the snap ring 700 of the present invention may be, for example, tungsten alloy, molybdenum alloy, tantalum alloy, or the like.
Preferably, the size of the fourth protrusion 900 is substantially equal to the sum of the sizes of the two third protrusions 800 at the two ends of the snap ring 700, so as to ensure that the cathode fixing device of the present invention has a symmetrical structure, thereby being beneficial to ensure that the ion implantation concentration is the same in all regions of the material to be implanted with ions.
All the connecting holes can be through holes with screw threads on the inner wall or through holes without screw threads on the inner wall.
The support structure of the invention and the orientation of the straight portions of the filament are arranged vertically. The support structure and filament holder of the present invention are secured to the body of the ion implanter after being threaded through a layer of insulating material, such as ceramic.
The longitudinal section of the support structure of the invention is preferably in the same plane as the cross-section of the fixture.
The cathode fixing device of the invention cancels the middle rod at the bottom of the cathode cup body, increases the available space in the cathode cavity, and makes it possible to increase the longitudinal section area of the active part of the filament and reduce the current of the filament. In addition, the cathode fixing device of the invention cancels the middle rod at the bottom of the cathode cup body, the fixture arranged at the periphery of the cathode and the supporting structure connected with the fixture are used for fixing the cathode, the middle rod is changed into the whole outer ring to bear force at the bearing part, the short circuit caused by the deformation of the middle rod can be effectively avoided, the utilization rate of the ion implanter is improved, and the manpower and material resources are saved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A filament for an ion source of an ion implanter, characterized in that the longitudinal cross-sectional area of the active part is 70-90mm2(ii) a The active part is in a smooth curve shape and is axisymmetric; the shortest distance from the two ends of the active part to the inner side wall of the cathode is equal and is 3-4 mm.
2. The filament according to claim 1, wherein the active portion has a longitudinal cross-sectional area of 80 to 90mm2。
3. A filament according to claim 1 or 2, wherein the active portion has a physical length of 40-50mm and a diameter of 1.7-1.9 mm.
4. An ion source for an ion implanter, comprising:
a cathode having a cup-shaped structure;
the filament of any one of claims 1 to 3, disposed in the cathode;
the filament clamp is used for fixing the filament; and
a cathode fixture, comprising: a fastener; the fixture is arranged on the periphery of the cathode, a convex block is arranged on the fixture, a connecting hole is formed in the convex block, and the connecting hole is used for being matched with a fastener to fix the fixture on the cathode; and a support structure connected to the bumps by fasteners.
5. The ion source of claim 4, wherein the chuck comprises:
the clamping device comprises a first clamp, a second clamp and a clamping mechanism, wherein a first lug and a second lug are respectively arranged at two ends of the first clamp; and
the clamping device comprises a first clamping hoop, a second clamping hoop, a clamping head and a clamping head, wherein a first lug and a second lug are respectively arranged at two ends of the second clamping hoop; and is
The support structure comprises a first support structure and a second support structure, the first support structure is connected with the first lug through a fastener, and the second support structure is connected with the second lug through a fastener.
6. The ion source of claim 4, wherein the chuck comprises:
the clamping ring is provided with third connecting holes at two ends, and a fourth connecting hole is arranged at the middle of the clamping ring; and is
The supporting structure comprises a third supporting structure and a fourth supporting structure, the third supporting structure is connected with the third lug through a fastener, and the fourth supporting structure is connected with the fourth lug through a fastener.
7. The ion source of claim 4, wherein the cathode mount is a symmetrical structure.
8. The ion source of claim 4, wherein the top end of the support structure is provided with a threaded aperture; preferably, the support structure is a support bar.
9. The ion source of claim 4, wherein the fastener is a screw.
10. An ion implanter comprising the ion source of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111321156.6A CN114242548A (en) | 2021-11-09 | 2021-11-09 | Filament for ion source of ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111321156.6A CN114242548A (en) | 2021-11-09 | 2021-11-09 | Filament for ion source of ion implanter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114242548A true CN114242548A (en) | 2022-03-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111321156.6A Pending CN114242548A (en) | 2021-11-09 | 2021-11-09 | Filament for ion source of ion implanter |
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| CN (1) | CN114242548A (en) |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257748A (en) * | 1990-01-22 | 1991-11-18 | Tokyo Electron Ltd | Ion generating method |
| US5256947A (en) * | 1990-10-10 | 1993-10-26 | Nec Electronics, Inc. | Multiple filament enhanced ion source |
| EP1065696A2 (en) * | 1999-06-29 | 2001-01-03 | Lucent Technologies Inc. | Ion implantation apparatus and ion source and ion source subassembly for use in ion implantation apparatus |
| KR200271808Y1 (en) * | 2002-01-28 | 2002-04-13 | 아남반도체 주식회사 | Filament of a ion implanter |
| KR20020091371A (en) * | 2001-05-30 | 2002-12-06 | 삼성전자 주식회사 | Filament for generating ion beam in ion implantation device |
| KR20040010873A (en) * | 2002-07-25 | 2004-02-05 | 삼성전자주식회사 | Jig for insertion filament on ion implantation apparatus |
| KR20060030688A (en) * | 2004-10-06 | 2006-04-11 | 삼성전자주식회사 | Filament of ion implanter |
| JP2006216440A (en) * | 2005-02-04 | 2006-08-17 | Mitsui Eng & Shipbuild Co Ltd | Formation method and ion source of filament used for ion source |
| KR20080102830A (en) * | 2007-05-22 | 2008-11-26 | 삼성전자주식회사 | Ion generator |
| JP2010287415A (en) * | 2009-06-11 | 2010-12-24 | Nissin Ion Equipment Co Ltd | Filament and ion source equipped therewith |
| DE202015003804U1 (en) * | 2015-05-27 | 2015-07-24 | Maik Radtke | Pipe quick release clamp |
| KR20150095279A (en) * | 2014-02-13 | 2015-08-21 | (주)제이씨이노텍 | Cathode setting device for semiconductor equipment |
| CN107331596A (en) * | 2017-06-26 | 2017-11-07 | 武汉华星光电半导体显示技术有限公司 | Filament, ionisation chamber and ion implantation equipment |
| CN111613504A (en) * | 2019-02-22 | 2020-09-01 | 力晶科技股份有限公司 | Ion source head structure of semiconductor ion implanter |
-
2021
- 2021-11-09 CN CN202111321156.6A patent/CN114242548A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03257748A (en) * | 1990-01-22 | 1991-11-18 | Tokyo Electron Ltd | Ion generating method |
| US5256947A (en) * | 1990-10-10 | 1993-10-26 | Nec Electronics, Inc. | Multiple filament enhanced ion source |
| EP1065696A2 (en) * | 1999-06-29 | 2001-01-03 | Lucent Technologies Inc. | Ion implantation apparatus and ion source and ion source subassembly for use in ion implantation apparatus |
| KR20020091371A (en) * | 2001-05-30 | 2002-12-06 | 삼성전자 주식회사 | Filament for generating ion beam in ion implantation device |
| KR200271808Y1 (en) * | 2002-01-28 | 2002-04-13 | 아남반도체 주식회사 | Filament of a ion implanter |
| KR20040010873A (en) * | 2002-07-25 | 2004-02-05 | 삼성전자주식회사 | Jig for insertion filament on ion implantation apparatus |
| KR20060030688A (en) * | 2004-10-06 | 2006-04-11 | 삼성전자주식회사 | Filament of ion implanter |
| JP2006216440A (en) * | 2005-02-04 | 2006-08-17 | Mitsui Eng & Shipbuild Co Ltd | Formation method and ion source of filament used for ion source |
| KR20080102830A (en) * | 2007-05-22 | 2008-11-26 | 삼성전자주식회사 | Ion generator |
| JP2010287415A (en) * | 2009-06-11 | 2010-12-24 | Nissin Ion Equipment Co Ltd | Filament and ion source equipped therewith |
| KR20150095279A (en) * | 2014-02-13 | 2015-08-21 | (주)제이씨이노텍 | Cathode setting device for semiconductor equipment |
| DE202015003804U1 (en) * | 2015-05-27 | 2015-07-24 | Maik Radtke | Pipe quick release clamp |
| CN107331596A (en) * | 2017-06-26 | 2017-11-07 | 武汉华星光电半导体显示技术有限公司 | Filament, ionisation chamber and ion implantation equipment |
| CN111613504A (en) * | 2019-02-22 | 2020-09-01 | 力晶科技股份有限公司 | Ion source head structure of semiconductor ion implanter |
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