CN114236684B - Silicon-based inclined microcavity chip on chip and switching and sensing application method thereof - Google Patents
Silicon-based inclined microcavity chip on chip and switching and sensing application method thereof Download PDFInfo
- Publication number
- CN114236684B CN114236684B CN202111597302.8A CN202111597302A CN114236684B CN 114236684 B CN114236684 B CN 114236684B CN 202111597302 A CN202111597302 A CN 202111597302A CN 114236684 B CN114236684 B CN 114236684B
- Authority
- CN
- China
- Prior art keywords
- silicon
- chip
- film layer
- microcavity
- microstructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 156
- 239000010703 silicon Substances 0.000 title claims abstract description 156
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 153
- 238000000034 method Methods 0.000 title claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 36
- 238000000411 transmission spectrum Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims description 48
- 230000005684 electric field Effects 0.000 claims description 30
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 13
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 23
- 230000008878 coupling Effects 0.000 abstract description 17
- 238000010168 coupling process Methods 0.000 abstract description 17
- 238000005859 coupling reaction Methods 0.000 abstract description 17
- 238000001228 spectrum Methods 0.000 abstract description 13
- 230000003595 spectral effect Effects 0.000 description 37
- 230000008859 change Effects 0.000 description 12
- 230000033228 biological regulation Effects 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000035772 mutation Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12069—Organic material
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12145—Switch
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention relates to the technical field of microstructure application, in particular to a silicon-based inclined microcavity chip on a chip, a switch thereof and a sensing application method thereof. The chip on chip comprises a substrate, a nonlinear film layer, a silicon film layer and a silicon microstructure layer. The nonlinear film layer is arranged on the substrate, the silicon film layer is arranged on the nonlinear film layer, the silicon microstructure layer is arranged on the silicon film layer, the silicon microstructure layer comprises periodically arranged silicon microstructures, and inclined microcavities are arranged in the silicon microstructures. According to the invention, a silicon microstructure array is constructed on a common silicon film layer, and an inclined microcavity is introduced on the silicon microstructure, so that the structural symmetry breaking characteristic is realized, an ultra-narrow band resonance spectrum and a high-quality resonance mode are generated, and an excellent transmission spectrum and a strong local light field coupling characteristic are obtained. The chip has good application prospect in the aspects of optical switch and sensing. In addition, the small size and sub-wavelength features of the present invention facilitate the application of the present invention in highly integrated, multi-functional photovoltaic functional technologies and devices.
Description
Technical Field
The invention relates to the technical field of microstructure application, in particular to a silicon-based inclined microcavity chip on a chip, a switch thereof and a sensing application method thereof.
Background
The technology with multiple photoelectric functions and manual regulation and control is realized on the silicon substrate, and has very important application value in various fields such as electronic information, optoelectronic devices, high-definition video technology and the like. How to realize high performance (e.g., high-quality light transmission property: high transmittance, narrow or wide spectral bandwidth, high signal-to-noise ratio of spectral frequency shift and intensity change before and after operation, etc.) spectral technology and regulation channel based on simple silicon-based structure has been an important front-end technology for technological exploration.
The common chip-on-silicon substrate structure units are often far larger than the working wavelength, so that the structure size of the sub-wavelength is difficult to realize, and high-density integration is severely restricted. For example, in the most advanced VR technology or optical holographic video technology, high-quality three-dimensional video conference applications cannot be obtained because the large inability of the structural units to be highly integrated eventually results in the failure to achieve high-pixel information transmission and display. However, to achieve high-speed and high-efficiency information transmission, a good switch regulation technology is a necessary requirement of a chip-on-silicon technology. Signal to noise ratio, energy consumption and operability in switching regulation are all critical quality factors. In addition, integrating different functions and multiple technologies in a chip module on a silicon substrate is an important goal for promoting the future technical development of products with multiple advantages such as multifunctional high integration, microminiaturization, low energy consumption and the like. However, the existing chip-on-silicon technology is often concentrated on a certain technical means, multiple functions are difficult to be simultaneously provided and realized, and the structure is often complex and ultra-high integration is difficult to be realized.
In the above technical demands, achieving narrower transmission peaks or transmission valleys, or abrupt transmission changes, is critical to achieving good switching and sensing characteristics.
Disclosure of Invention
In order to solve the problems, the invention provides a silicon-based inclined microcavity chip on a chip, which comprises a substrate, a nonlinear film layer, a silicon film layer and a silicon microstructure layer. The nonlinear film layer is arranged on the substrate, the silicon film layer is arranged on the nonlinear film layer, the silicon microstructure layer is arranged on the silicon film layer, the silicon microstructure layer comprises periodically arranged silicon microstructures, and inclined microcavities are arranged in the silicon microstructures.
Further, the nonlinear film layer is made of lithium niobate or 4-dimethylamino-n-methyl-4-astragalus bazole p-toluenesulfonate.
Further, the period is a two-dimensional period, and the silicon microstructure is strip-shaped.
Further, the cross section of the silicon microstructure is rectangular.
Further, the included angle between the inclined microcavity and the normal direction of the silicon film layer is smaller than 65 degrees.
Still further, the width of the sloped microcavity is less than 100 nanometers.
Still further, the distance between adjacent silicon microstructures is greater than 100 nanometers.
On the other hand, the invention provides a switch application method of a silicon-based inclined microcavity chip on a chip, which comprises the following steps: and placing the silicon-based inclined microcavity chip on the chip in an electric field, and realizing the optical switch by adjusting the intensity of the electric field.
Further, the direction of the electric field is along the normal direction of the nonlinear film layer.
In yet another aspect, the invention provides a method for sensing an application of a silicon-based oblique microcavity chip on a chip, comprising: and (3) placing the object to be detected in a silicon-coated microstructure and a silicon film layer, measuring a transmission spectrum, and realizing sensing according to the movement of a transmission peak or a transmission valley.
The invention has the beneficial effects that: the invention provides a silicon-based inclined microcavity chip-on-chip, which comprises a substrate, a nonlinear film layer, a silicon film layer and a silicon microstructure layer. The nonlinear film layer is arranged on the substrate, the silicon film layer is arranged on the nonlinear film layer, the silicon microstructure layer is arranged on the silicon film layer, the silicon microstructure layer comprises periodically arranged silicon microstructures, and inclined microcavities are arranged in the silicon microstructures. According to the invention, on one hand, a silicon microstructure array is constructed on a common silicon film layer, and on the other hand, an inclined microcavity is introduced on the silicon microstructure, so that the structural symmetry breaking characteristic is realized, an ultra-narrow band resonance spectrum and a high-quality resonance mode are generated, and an excellent transmission spectrum and a strong local light field coupling characteristic are obtained. On the basis, the nonlinear film layer realizes the regulation and control of the light field and the light transmission spectrum under the external electrical signal, and a high-performance electro-optical switch regulation and control technology is generated. Furthermore, by utilizing the structural characteristics of the inclined microcavity, namely the open slit and the strong local light field characteristic, the high-quality and high signal-to-noise ratio detection technology in the aspect of optical sensing is realized. In addition, the small size and sub-wavelength features of the present invention facilitate the application of the present invention in highly integrated, multi-functional photovoltaic functional technologies and devices.
The present invention will be described in further detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of a silicon-based tilted microcavity chip-on-chip.
FIG. 2 is a graph of transmission spectra of a chip on a chip with tilted microcavities tilted and tilted microcavities not tilted.
Fig. 3 shows the electric field distribution (a) and the magnetic field distribution (b) of the chip on chip at the transmission valleys when the tilted microcavity is not tilted.
Fig. 4 shows the electric field distribution (a) and the magnetic field distribution (b) of the chip on chip at a wide transmission valley with an inclined microcavity inclination angle of 20 degrees.
Fig. 5 shows the electric field distribution (a) and the magnetic field distribution (b) of the chip on chip at a narrow transmission valley with an inclined microcavity inclination angle of 20 degrees.
FIG. 6 is a graph of the transmission spectrum of a chip on a chip with different tilt angles of the microcavity.
FIG. 7 is a graph of transmission spectra of chip on chip at different applied voltages.
FIG. 8 is a graph of transmission spectra of chip on chip at different applied voltages.
FIG. 9 is a graph of transmission spectra of different percentages of sodium chloride solution.
In the figure: 1. a substrate; 2. a nonlinear film layer; 3. a silicon film layer; 4. a silicon microstructure; 5. tilting the microcavity.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the present application more apparent, the present application will be described in further detail below with reference to the accompanying drawings and examples.
Example 1
The invention provides a silicon-based inclined microcavity chip-on-chip. As shown in fig. 1, the silicon-based inclined microcavity chip comprises a substrate 1, a nonlinear film layer 2, a silicon film layer 3 and a silicon microstructure layer 4. A nonlinear membrane layer 2 is disposed on a substrate 1. The nonlinear membrane layer 2 is made of lithium niobate (LiNO) 3 ) Or 4-dimethylamino-N-methyl-4-stilbene-oxazole (4-dimethyl-N-methyl-4-stilbazolium tosylate, DAST) p-toluenesulfonic acid. A silicon film layer 3 is disposed on the nonlinear film layer 2. A silicon microstructure layer is arranged on the silicon film layer 3The silicon microstructure layer comprises silicon microstructures 4 which are arranged periodically, the period of arrangement of the silicon microstructures 4 is a two-dimensional period, and the silicon microstructures 4 are strip-shaped. The cross section of the silicon microstructure 4 is rectangular. The silicon microstructure 4 is provided with an inclined microcavity 5. The width of the inclined microcavity 5 is smaller than the width of the silicon microstructure 4. The width of the inclined microcavity 5 is the width of the inclined microcavity 5 at the surface of the silicon microstructure 4. The width of the inclined microcavity 5 is less than 100 nanometers to enhance the coupling between the two portions of the silicon microstructure 4 on both sides of the inclined microcavity 5. The distance between adjacent silicon microstructures 5 is greater than 100 nanometers to reduce coupling between adjacent silicon microstructures 4. The angle between the inclined microcavity 5 and the normal direction of the silicon film layer 3 is smaller than 65 degrees and larger than 0 degrees so that light can be coupled into the inclined microcavity 5, and strong coupling between the two parts of the silicon microstructure 4 is caused. When the angle of the inclined microcavity 5 is changed, the inclined microcavity 5 is rotated about a straight line passing through the center of the silicon microstructure 4 in the horizontal direction as an axis.
According to the invention, on one hand, the silicon microstructure 4 array is constructed on the common silicon film layer 3, and on the other hand, the inclined microcavity 5 is introduced on the silicon microstructure 4, so that the structural symmetry breaking feature is realized, and due to the coupling between the two parts of the silicon microstructure 4 divided by the inclined microcavity 5, an ultra-narrow band resonance spectrum and a high-quality resonance mode are generated in a transmission spectrum, and the excellent transmission spectrum and a strong local optical field coupling characteristic are obtained, so that the high-quality factor optical transmission response is realized. On the basis, the nonlinear film layer 2 realizes the regulation and control of the light field and the light transmission spectrum under the external electrical signal, and the high-performance electro-optical switch regulation and control is generated. Further, by utilizing the structural features of the inclined microcavity 5, namely the open slits and the strong local light field characteristics, the optical sensing device also provides very convenient geometric structure adjustment for realizing optical sensing operation, and realizes high-quality and high signal-to-noise ratio detection technology in the aspect of optical sensing. In addition, the small size and sub-wavelength features of the present invention facilitate the application of the present invention in highly integrated, multi-functional photovoltaic functional technologies and devices.
In the invention, the two parts of the silicon microstructure 4 and the silicon film layer 3 form a trimer, and the inclined microcavity 5 enhances the coupling between the two parts of the silicon microstructure 4, so that ultra-narrow transmission peaks and transmission valleys, ultra-low-transmittance transmission valleys and ultra-high-transmittance transmission peaks are realized.
Further, on the side close to the silicon film layer 3, the inclined microcavity 5 is narrow; the inclined microcavity 5 is wide on the side away from the silicon film layer 3. This facilitates more light entering the tilted microcavity 5, forming a strong light field in the tilted microcavity 5, enhancing the coupling between the silicon microstructures 4 divided into two parts by the tilted microcavity 5, and also facilitating the coupling between the two parts of the silicon microstructures 4 and the silicon film layer 3, thereby forming narrower transmission peaks and narrower transmission valleys.
Example 2
On the basis of example 1, the present invention compares the transmission spectra of the chip on chip when the tilted microcavity 5 is tilted and when the tilted microcavity 5 is not tilted. The algorithm used is a finite element algorithm. The adopted structural parameters are as follows: the substrate 1 is silicon dioxide material and has a thickness of 20 micrometers; the nonlinear film layer 2 is made of 4-dimethylamino-n-methyl-4-stilbene-bazole (DAST) tosylate with the thickness of 100 nanometers; the silicon film layer 3 is made of silicon and has the thickness of 100 nanometers; the material of the silicon microstructure 4 is silicon, the height is 200 nanometers, and the width is 500 nanometers; the inclined microcavity 5 has an inclination angle of 20 degrees and a width of 50 nanometers, and air is filled in the inclined microcavity 5; the period of the silicon microstructure 4 is 800 nm. The incident light is incident in the normal direction of the silicon film layer 3, that is, normal incidence.
As shown in fig. 2, the chip on chip with the tilted microcavity 5 produces a very sharp spectral line characteristic of the transmission spectrum abrupt change in the spectrum, compared to the tilted microcavity 5 not being tilted. At a spectral wavelength of 1.2032 microns, the transmittance is 0.0029. Whereas at a spectral wavelength of 1.2037 microns after mutation, the spectral transmittance was 0.9997, close to 1. This shows that the inclined microcavity 5 introduced in the silicon-based film structure of the present invention realizes a very strong spectral intensity mutation of the transmission spectrum from the transmittance close to 0 to 1, and the corresponding spectral wavelength position in this intensity mutation is only changed by 0.0005 micrometers or 0.5 nanometers. Both of which fully illustrate that the present invention achieves an optical filtering technique with an ultra-narrow band high quality factor. In addition, the structural feature is only an inclined air slit, so that the technology of the invention has very simple structural feature and a process method thereof, and is very favorable for obtaining wide application in the silicon-based process and technical field, in particular to integration of technology and functional modules on a silicon substrate. Furthermore, the period (800 nanometers) of the structural resonance unit is far smaller than the working wavelength (about 1.2 micrometers), so that the integration is very convenient to be high-density, and the multifunctional integration of the high-pixel working module is realized.
Based on the optical pair theory process, the completely consistent spectral characteristics are still presented in the top-down or bottom-up test of the incident light. Therefore, the chip on the chip is not affected by the incidence on the front side and the back side or the testing end, and further shows that the chip on the chip is easy to integrate and apply in the technical field of silicon-based photoelectric devices.
Fig. 3 is the electric field distribution (a) and magnetic field distribution (b) of the chip on chip at the transmission valleys (1.1886 microns) when the tilted microcavities are not tilted. Fig. 4 shows the electric field distribution (a) and the magnetic field distribution (b) of the chip on chip at a wide transmission valley (1.1886 μm) with an inclined microcavity inclination angle of 20 degrees. Fig. 5 shows the electric field distribution (a) and the magnetic field distribution (b) of the chip on chip at a narrow transmission valley (1.2032 microns) with an inclined microcavity inclination angle of 20 degrees. As can be seen from the figure, (1) for the case where the inclined microcavity 5 is not inclined, the electric field strength is mainly localized within the inclined microcavity 5. The corresponding magnetic field intensity distribution diagram shows that the magnetic field is mainly distributed on two sides of the slit and symmetrically distributed in the two silicon microstructures 4 divided by the slit. This means that the transmission valley mainly originates from the resonance of the two silicon microstructures 4 separated by the slit with the optical cavity formed by the slit. The electric field is concentrated and limited in the slit, and the magnetic field is symmetrically distributed in the silicon microstructures 4 at the two sides of the slit; (2) For the tilted microcavity 5 case, the electric and magnetic field profiles at the transmission valley wavelength position of the transmission spectrum at 1.1886 microns have very similar characteristics to the profile characteristics of the un-tilted angle microcavity structure described above: the electric field is still localized in the slit and the magnetic field is still distributed on both sides of the slit. This illustrates that the principle at the transmission valleys still comes from the optical resonance cavity resonance formed by the slit microcavities; (3) In the case of the tilted microcavity 5, the electric and magnetic field profiles at the 1.2032 μm transmission trough wavelength position of the transmission spectrum show a very pronounced difference. Is characterized in that: the electric field is not only in the slit, but also in the silicon microstructures 4 on both sides of the slit, a strong electric field is distributed, and in particular, the electric field distribution is obviously asymmetric, namely, the intensity on the right side is obviously larger than that on the left side; the magnetic field profile also exhibits a significant difference: the main magnetic field is distributed completely separately in the silicon microstructures 4 on both sides of the slit and the magnetic field strength is also significantly non-uniform. This suggests that this steep sharp transmission spectrum generated in the tilted microcavity 5 results from new physical mechanisms and modes, the core mechanism resulting from excitation of the asymmetric resonance mode and its hybrid coupling of the slit microcavity resonance with the silicon microstructure resonance mode.
Example 3
On the basis of example 2, transmission spectra were calculated for the inclined microcavity 5 at an inclination angle of 15 degrees, 20 degrees, 25 degrees. Other parameters were the same as in example 2. As shown in fig. 6, as the tilt angle of the tilted microcavity 5 in the silicon microstructure 4 increases, steep sharp transmission spectral features remain and characteristics (e.g., transmittance change contrast, spectral wavelength change, etc.) remain very intact. The entire spectral wavelength position corresponding to the transmission spectrum is shifted in the long-wavelength direction. For example, a transmission line with an inclination angle of 25 degrees has a transmission of 0.0245 at a wavelength of 1.2055 microns; whereas at a wavelength of 1.2058 microns, the spectral transmittance reaches 0.9996, approaching 1. This shows that the inclined microcavity 5 with an inclination angle of 25 degrees introduced in the silicon microstructure 4 still achieves a very strong spectral intensity mutation of the transmittance of one transmission spectrum from approximately 0 to 1, and that the corresponding spectral wavelength position in this intensity mutation is only a change of 0.0003 μm or 0.3 nm. The two sufficiently illustrate the optical filtering structure with ultra-narrow band and high quality factor, which is obtained by the invention, and has the capability of generating the movement of the working wavelength in the spectrum range, thereby being easier to realize the optical and electrical functions and technical requirements at the specific working wavelength.
Example 4
The invention also provides a switch application method of the silicon-based inclined microcavity chip on the chip, which comprises the following steps: the silicon-based inclined microcavity chip is placed in an electric field, the direction of the electric field is along the normal direction of the nonlinear film layer 2, and the optical switch is realized by adjusting the intensity of the electric field.
In this embodiment, the electric field changes the dielectric constant or optical refractive index of the nonlinear film layer 2, thereby changing the environment around the silicon film layer 3, and further changing the coupling between the silicon film layer 3 and the silicon microstructure 4, thereby adjusting and controlling the position of the transmission valley or the transmission peak in the transmission spectrum, and thus realizing optical switching.
Further, the thickness of the silicon film layer 3 is smaller than 120 nm, and the thickness of the nonlinear film layer 2 is larger than 80 nm, so that the nonlinear film layer 2 can change the environment of the silicon film layer 3 more, thereby moving the positions of the transmission valleys or the transmission peaks more, and realizing an optical switch with higher sensitivity.
Example 5
On the basis of example 1, an upper electrode layer was provided on the silicon film layer 3, and a lower electrode layer was provided on the bottom of the substrate 1. The upper electrode layer and the lower electrode layer are made of transparent conductive glass (ITO). The thickness of the upper electrode layer and the lower electrode layer is more than 20 nanometers and less than 100 nanometers. When the chip-on-chip is used for an optical switch, the upper electrode layer and the lower electrode layer are connected with an external power supply, and different electric fields are applied to the nonlinear film layer 2 through the external power supply, so that the transmission spectrum of the chip-on-chip is regulated and controlled. The embodiment is provided with the upper electrode layer and the lower electrode layer, so that the connection of an external power supply is facilitated. In addition, the upper electrode layer coats the silicon film layer 3, and limits the electric field on the surface of the silicon film layer 3, so that the coupling between the silicon film layer 3 and the silicon microstructure 4 is enhanced, and the transmission valley and the transmission peak with higher transmission coefficient difference values in the transmission spectrum are facilitated.
Example 6
Based on embodiment 5, the silicon-based inclined microcavity on-chip switch application method comprises the following steps: the upper electrode layer and the lower electrode layer are respectively connected with a power supply of an external circuit through electrodes, an electric field is formed in the upper electrode layer and the lower electrode layer, the electric field changes the dielectric constant or refractive index of the nonlinear film layer 2, the transmission spectrum of the chip on chip is regulated and controlled, and the optical switching function is realized. In the embodiment, the method for establishing the electric field is simple, convenient to regulate and control, and capable of simply realizing the function of the optical switch.
Example 7
On the basis of example 5, the transmission spectra of the chip on chip at different voltages were calculated. The thickness of the transparent conductive glass (ITO) was 100 nm. As shown in FIG. 7, by changing the magnitude of the applied voltage and performing a series of transmission spectrum calculations, the spectral response of the silicon-based inclined microcavity chip on the invention under different voltage conditions is obtained. It can be seen in the spectrum contrast chart of this embodiment that the steep and sharp transmission mutation spectrum characteristic remains intact, and the spectrum wavelength position shows a shift to the long band with the increase of the applied voltage. This pronounced spectral shift, as well as the ultra-narrow band spectral linearity, is very advantageous for generating the switching response. For example, at an applied voltage of 0 volts, the spectral transmittance is close to 1 (0.9985) at a wavelength position of 1.2038 micrometers. And after the input voltage value was 0.25 volts, the spectral transmittance suddenly decreased to 0.0123, close to 0, at this wavelength position (1.2038 microns) after the spectral shift. The technology of the invention realizes electro-optical regulation and control switch operation or switch function technology with extremely high signal-to-noise ratio under weak voltage regulation, and shows the application advantages of the silicon-based inclined microcavity chip on chip in the aspects of sub-wavelength, high integration, high signal-to-noise ratio, low voltage and low energy consumption electro-optical function devices and technologies.
Example 8
Based on example 7, the material of the nonlinear film layer 2 was lithium niobate (LiNO 3). As shown in fig. 8, a significant spectral shift can still be produced by the input voltage signal, compared to the spectral line without the applied voltage. In the regulation and control process, the original spectrum characteristics are kept intact. These phenomena confirm that the chip-on-chip electro-optic control technique of the silicon-based inclined microcavity chip provided by the invention can be well maintained in other nonlinear materials such as lithium niobate (LiNO 3) systems. Lithium niobate (LiNO 3) is an optical and electrical nonlinear material with very wide application, and has very mature technical process and wide application market in the nonlinear optical and electrooptical fields. Lithium Niobate (LN) crystals are a multifunctional crystal having excellent piezoelectric effect, electro-optical effect, acousto-optic effect, nonlinear effect, and photorefractive effect. The method is widely applied to aspects such as optical communication, information processing, integrated optical circuit, image storage, harmonic generation, frequency doubling device, parametric oscillation, 1064nm laser frequency doubling, quadruple frequency phase matching device and the like, such as: SAW filters, Q-switches, electro-optic dimmers, parametric oscillators, optical waveguide substrates. Therefore, the embodiment provides a chip-on-chip based on lithium niobate and with wider application, and the chip-on-chip has a plurality of potential applications in the fields of piezoelectricity, ferroelectric, photoelectricity, nonlinear optics, thermoelectric and the like.
Example 9
The invention also provides a sensing application method of the silicon-based inclined microcavity chip-on-chip, which comprises the following steps: and placing the object to be detected in the coated silicon microstructure 4 and the silicon film layer 3, measuring the transmission spectrum, and realizing sensing according to the movement of the transmission peak or the transmission valley.
In this embodiment, the object to be measured not only covers the silicon film layer 3, but also fills the inclined microcavity 5, severely affecting the coupling between the two parts of the silicon microstructure 4 separated by the inclined microcavity 5. Therefore, the invention realizes high-sensitivity detection of the refractive index of the object to be detected.
Compared with common optical sensing and detecting devices and technologies, the inclined microcavity 5 in the silicon-based inclined microcavity chip provided by the invention forms a natural light field local space, and is a good channel for a detected substance to enter the light field local space, so that perfect overlapping of a resonance light field and the detected substance in space is realized very conveniently, the change of the detected substance is sensed nearby by the resonance light field, and further high-efficiency sensing and detecting are realized. This also demonstrates the structural advantages of the present technology and the spatial overlap advantages of the interaction between the optical field and the substance being tested for sensing and its novel technical approach.
Example 10
Based on the embodiment 9, the application test of the silicon-based inclined microcavity chip on the optical sensing aspect is carried out by taking sodium chloride solution as a tested substance. The specific structural parameters were the same as in example 2. The relation between the spectral characteristics and the measured substances is obtained by testing the transmission spectral lines at different concentrations (mass percent). As shown in fig. 9, the spectral line results of the test show that the spectral line exhibits a characteristic of a significant shift toward the long wavelength band as the concentration increases in the liquid phase environment. For example, from a concentration of 0 to 1%, the lowest spectral intensity shifted from a wavelength position of 1.5700 microns to 1.570380 microns, and a spectral line shift of 0.380 nm. Continuing to increase the concentration to 2% and 3%, the spectrum shifted to 1.570781 microns 1.57114 microns. Through calculation, a good linear fitting relation exists between the wavelength position of spectrum movement and concentration change, and the corresponding sensing detection sensitivity is 0.380 nanometers/1 percent concentration change value. Furthermore, as can be seen from the spectral line comparison on the graph, at very low concentration variation values (1%), the spectral lines still exhibit a very good discrimination, i.e. a very pronounced spectral line separation from each other, and are easy to test and distinguish. Furthermore, in addition to the characteristic of a shift in the wavelength dimension of the spectrum, the spectral intensity changes are also very pronounced at the same wavelength location (usually also with a fixed wavelength for spectral intensity testing). For example, at a spectral position of 1.570380 microns, the spectral intensity suddenly decreases from 0.6575 to 0.0164, enabling the light field to change from higher transmission to almost opaque. This extremely strong change in the relative intensity of the spectrum can provide a high signal-to-noise ratio for optical sensing. Therefore, the silicon-based inclined microcavity chip on chip has the technical characteristics of high sensitivity and high signal to noise ratio optical sensing, has a series of technical advantages in the aspects of silicon-based high-integration, high sensitivity and high signal to noise ratio sensing detection, and is beneficial to application in the silicon-based sensing and detection, especially the detection of dangerous gas, ultra-low concentration, weak concentration change and the like.
Example 11
On the basis of the embodiment 1, a second nonlinear film layer is arranged on the silicon film layer 3, the material of the second nonlinear film layer is the same as that of the nonlinear film layer 2, and the thickness of the second nonlinear film layer is less than 20 nanometers. Thus, when the electric field in which the chip-on-chip is located is changed, the refractive index of the second nonlinear film layer is also changed, and the coupling between the silicon microstructure 4 and the silicon film layer 3 is changed. When the electric field is applied to regulate and control the transmission spectrum of the chip on the chip and realize the optical switch characteristic, the positions of the transmission peak and the transmission valley of the chip on the chip can be regulated and controlled more, so that the optical switch with higher sensitivity is realized.
Example 12
Based on embodiment 11, the inclined microcavity 5 is filled with a third nonlinear film layer, that is to say, the air in the original inclined microcavity 5 is replaced by the third nonlinear film layer, and the material of the third nonlinear film layer is the same as that of the second nonlinear film layer. In this way, when the electric field where the chip on chip is located is changed, the refractive index of the third nonlinear film layer is also changed, and the coupling of the silicon microstructure 4 divided into two parts by the inclined microcavity 5 is adjusted, so that the positions of the transmission peak and the transmission valley of the chip on chip are changed more, and an optical switch with higher sensitivity is realized.
Still further, the third nonlinear film layer fills the portion of the inclined microcavity 5 near the silicon film layer 3. That is, the third nonlinear film layer fills only the portion near the bottom. This facilitates the entry of incident light into the tilted microcavity 5 to enhance the coupling between the two portions divided by the tilted microcavity 5 to create transmission valleys of smaller transmission coefficient.
The foregoing description of the preferred embodiments of the present invention is not intended to limit the invention to the precise form disclosed, and any modifications, equivalents, improvements and alternatives falling within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. The silicon-based inclined microcavity chip is characterized by comprising a substrate, a nonlinear film layer, a silicon film layer and a silicon microstructure layer, wherein the nonlinear film layer is arranged on the substrate, the silicon film layer is arranged on the nonlinear film layer, the silicon microstructure layer is arranged on the silicon film layer, the silicon microstructure layer comprises periodically arranged silicon microstructures, and inclined microcavities are arranged in the silicon microstructures; the period is a two-dimensional period, the silicon microstructure is strip-shaped, the section of the silicon microstructure is rectangular, the width of the inclined microcavity is smaller than 100 nanometers, the included angle between the inclined microcavity and the direction normal of the silicon film layer is smaller than 65 degrees and larger than 0 degree, and the distance between the adjacent silicon microstructures is larger than 100 nanometers.
2. The silicon-based tilted microcavity chip-on-chip of claim 1, wherein: the nonlinear film layer is made of lithium niobate or p-toluenesulfonic acid 4-dimethylamino-n-methyl-4-astragalus bazole.
3. A method of switching applications of a silicon-based tilted microcavity chip on a chip according to any one of claims 1-2, characterized by: and placing the silicon-based inclined microcavity on-chip in an electric field, and adjusting the intensity of the electric field to realize the optical switch.
4. A method of switching applications of a silicon-based tilted microcavity chip-on-a-chip as claimed in claim 3, characterized by: the direction of the electric field is along the normal direction of the nonlinear film layer.
5. A method of sensing applications of a silicon-based tilted microcavity chip on a chip as claimed in any one of claims 1-2, characterized by: and coating the silicon microstructure and the silicon film layer with an object to be detected, measuring a transmission spectrum, and realizing sensing according to the movement of a transmission peak or a transmission valley.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111597302.8A CN114236684B (en) | 2021-12-24 | 2021-12-24 | Silicon-based inclined microcavity chip on chip and switching and sensing application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111597302.8A CN114236684B (en) | 2021-12-24 | 2021-12-24 | Silicon-based inclined microcavity chip on chip and switching and sensing application method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114236684A CN114236684A (en) | 2022-03-25 |
| CN114236684B true CN114236684B (en) | 2023-06-30 |
Family
ID=80762528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111597302.8A Active CN114236684B (en) | 2021-12-24 | 2021-12-24 | Silicon-based inclined microcavity chip on chip and switching and sensing application method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114236684B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661133A (en) * | 2008-08-26 | 2010-03-03 | 华为技术有限公司 | An optical waveguide, method for preparing same and wavelength converter |
| CN107424915A (en) * | 2017-07-13 | 2017-12-01 | 中国科学院上海微系统与信息技术研究所 | Discontinuous crystallization silica-base film, hetero-junctions crystal-silicon solar cell and preparation method |
| CN110095888A (en) * | 2019-05-07 | 2019-08-06 | 电子科技大学 | Terahertz modulator and system and method based on silicon substrate micro-structure on SOI |
| CN111751927A (en) * | 2020-07-23 | 2020-10-09 | 中国科学院上海微系统与信息技术研究所 | Adjustable grating coupler |
-
2021
- 2021-12-24 CN CN202111597302.8A patent/CN114236684B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101661133A (en) * | 2008-08-26 | 2010-03-03 | 华为技术有限公司 | An optical waveguide, method for preparing same and wavelength converter |
| CN107424915A (en) * | 2017-07-13 | 2017-12-01 | 中国科学院上海微系统与信息技术研究所 | Discontinuous crystallization silica-base film, hetero-junctions crystal-silicon solar cell and preparation method |
| CN110095888A (en) * | 2019-05-07 | 2019-08-06 | 电子科技大学 | Terahertz modulator and system and method based on silicon substrate micro-structure on SOI |
| CN111751927A (en) * | 2020-07-23 | 2020-10-09 | 中国科学院上海微系统与信息技术研究所 | Adjustable grating coupler |
Non-Patent Citations (1)
| Title |
|---|
| 对称破缺等离激元微纳结构的可靠构建及其异常光学特性研究;张轼;CNKI博士学位论文全文库(第01期期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114236684A (en) | 2022-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10288977B2 (en) | Electromagnetic waveguide transmission modulation device | |
| US9366938B1 (en) | Electro-optic beam deflector device | |
| CN111142187B (en) | Filter based on double-guided-mode resonance grating mode coupling mechanism | |
| JP2003172912A (en) | Liquid crystal variable wavelength filter device and driving method therefor | |
| US11499915B2 (en) | Device for THz generation and/or detection and methods for manufacturing the same | |
| US20220326438A1 (en) | A plasmonic device enabling simplified fabrication | |
| Petrov et al. | Broadband integrated optical modulators: Achievements and prospects | |
| Razi et al. | Tunable photonic crystal wavelength sampler with response in terahertz frequency range | |
| Damgaard-Carstensen et al. | Electro-optic metasurface-based free-space modulators | |
| Qiu et al. | All-dielectric multifunctional transmittance-tunable metasurfaces based on guided-mode resonance and ENZ effect | |
| US7373058B2 (en) | Apparatus and method for detecting optical radiation | |
| US11543688B2 (en) | Waveguide component | |
| CN114236684B (en) | Silicon-based inclined microcavity chip on chip and switching and sensing application method thereof | |
| Ozaki et al. | Defect mode in one-dimensional photonic crystal with in-plane switchable nematic liquid crystal defect layer | |
| Ju et al. | The electro-optic spatial light modulator of lithium niobate metasurface based on plasmonic quasi-bound states in the continuum | |
| CN117393621A (en) | Space dislocation and vertical microcavity structure chip and application | |
| Shi et al. | Ultracompact field effect electro-absorption plasmonic modulator | |
| Huang et al. | First Demonstration of Waveguide-Integrated Black Phosphorus Electro-Optic Modulator for Mid-Infrared Beyond 4 μm | |
| Gu et al. | Optically tunable guide-mode resonance grating based on VO2 phase transition material | |
| US11106063B1 (en) | Electrically-tunable optical filters and methods | |
| CN117289490A (en) | Chip with semiconductor trapezoid microcavity structure and application thereof | |
| CN114265257A (en) | Frequency domain selective light absorption electro-optic regulation and control device | |
| US20230213811A1 (en) | Spatial light modulator and method of forming the same | |
| Amemiya et al. | Reduction in Operation Voltage of Silicon Ring Optical Modulator Using High-k (Ba, Sr) TiO3 Cladding Layer | |
| Yezekyan et al. | Plasmonic electro-optic modulators on lead zirconate titanate platform |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240411 Address after: No.13, 3rd floor, building 1, No.1, Tidu street, Qingyang District, Chengdu, Sichuan 610000 Patentee after: Chengdu yishenrui Technology Co.,Ltd. Country or region after: China Address before: 330096 No.99 Ziyang Avenue, Nanchang City, Jiangxi Province Patentee before: Jiangxi Normal University Country or region before: China |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240424 Address after: Room 602, Building 2, Laoshan Smart Industrial Park, No. 187-1 Zhuzhou Road, Laoshan District, Qingdao City, Shandong Province, 266000 Patentee after: Haiyanxin (Qingdao) Measurement and Control Technology Co.,Ltd. Country or region after: China Address before: No.13, 3rd floor, building 1, No.1, Tidu street, Qingyang District, Chengdu, Sichuan 610000 Patentee before: Chengdu yishenrui Technology Co.,Ltd. Country or region before: China |
|
| TR01 | Transfer of patent right |