CN114232083A - Preparation method of two-dimensional gallium nitride crystal - Google Patents
Preparation method of two-dimensional gallium nitride crystal Download PDFInfo
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- CN114232083A CN114232083A CN202111584076.XA CN202111584076A CN114232083A CN 114232083 A CN114232083 A CN 114232083A CN 202111584076 A CN202111584076 A CN 202111584076A CN 114232083 A CN114232083 A CN 114232083A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 62
- 239000013078 crystal Substances 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 101
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 54
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 39
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 9
- 238000002844 melting Methods 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052721 tungsten Inorganic materials 0.000 claims description 27
- 239000010937 tungsten Substances 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910000510 noble metal Inorganic materials 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000009396 hybridization Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 abstract 1
- 229910001195 gallium oxide Inorganic materials 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000012876 topography Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000002189 fluorescence spectrum Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000005273 aeration Methods 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
本发明揭示了一种二维氮化镓晶体的制备方法，所述制备方法包括：S1、提供金属片，并清洗；S2、加热融化镓金属，将熔融态的金属镓转移至金属片上；S3、将金属片及熔融态的金属镓置于反应腔室中，并对反应腔室进行抽真空；S4、加热反应腔室至恒定温度后，向反应腔室中通入氮源，使氮原子传输到金属镓表面，进行二维氮化镓晶体的生长。本发明二维氮化镓晶体的制备方法可以增加横向迁移率，使得超薄的sp3杂化方式及sp2杂化的六方相更容易获得，从而获得高结晶性、高平整的高质量二维氮化镓单晶材料，有望为深紫外光电及电力电子器件制备铺平道路。
The invention discloses a preparation method of a two-dimensional gallium nitride crystal. The preparation method includes: S1, providing a metal sheet, and cleaning; S2, heating and melting the gallium metal, and transferring the molten metal gallium to the metal sheet; S3 , place the metal sheet and the molten metal gallium in the reaction chamber, and evacuate the reaction chamber; S4, after heating the reaction chamber to a constant temperature, introduce a nitrogen source into the reaction chamber to make nitrogen atoms Transfer to the surface of metal gallium for the growth of two-dimensional gallium nitride crystals. The preparation method of the two-dimensional gallium nitride crystal of the present invention can increase the lateral mobility, so that the ultra-thin sp3 hybridization mode and the sp2 hybridization hexagonal phase are more easily obtained, thereby obtaining high crystallinity, high flatness and high quality two-dimensional nitrogen Gallium oxide single crystal material is expected to pave the way for the preparation of deep ultraviolet optoelectronic and power electronic devices.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to a preparation method of a two-dimensional gallium nitride crystal.
Background
Gallium nitride (GaN), which is one of the third generation nitride semiconductors, is a direct bandgap semiconductor having a forbidden band width of 3.4eV, and has excellent properties such as high electron mobility, high breakdown voltage, and high thermal conductivity. When the gallium nitride material is reduced to a two-dimensional scale, phenomena such as two-dimensional electron gas, increased lattice constant, blue shift of band gap and the like can occur.
Under the influence of quantum confinement effect, the two-dimensional gallium nitride has ideal deep ultraviolet light emission, exciton effect and electric transport characteristics. However, gallium nitride is susceptible to sp 3-hybridized longitudinal bonding and is difficult to obtain by conventional vapor phase growth or mechanical lift-off methods.
Therefore, in view of the above technical problems, it is necessary to provide a method for preparing a two-dimensional gallium nitride crystal.
Disclosure of Invention
In view of the above, the present invention provides a method for preparing a two-dimensional gallium nitride crystal.
In order to achieve the above object, an embodiment of the present invention provides the following technical solutions:
a method for producing a two-dimensional gallium nitride crystal, comprising:
s1, providing a metal sheet and cleaning;
s2, heating to melt gallium metal, and transferring the molten gallium metal onto a metal sheet;
s3, placing the metal sheet and the molten metal gallium into a reaction chamber, and vacuumizing the reaction chamber;
s4, heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to grow the two-dimensional gallium nitride crystal.
In one embodiment, the metal sheet is a tungsten sheet.
In one embodiment, the surface of the metal sheet is covered with a noble metal film, the noble metal film is a gold film or a platinum film, and the thickness of the noble metal film is greater than or equal to 100 nm.
In an embodiment, the step S1 specifically includes:
washing a metal sheet by using deionized water, and putting the metal sheet into a cleaned glass container;
ultrasonically cleaning the metal sheet by using ethanol, ultrasonically cleaning the metal sheet by using deionized water, and finally drying the metal sheet by using nitrogen.
In an embodiment, before the step S1, the method further includes:
ultrasonically cleaning a glass container by using deionized water, and ultrasonically cleaning the glass container by using acetone;
and repeating the steps to finish the cleaning of the glass container.
In an embodiment, in the step S2, the heating temperature for heating and melting the gallium metal is 30 ℃ to 2000 ℃.
In one embodiment, in step S4, the nitrogen source is nitrogen plasma, and the constant temperature is 600 ℃ to 1100 ℃; or, the nitrogen source is ammonia gas, and the constant temperature is more than or equal to 800 ℃.
In one embodiment, in the step S4, the introducing the nitrogen source into the reaction chamber specifically includes:
introducing a nitrogen source into the reaction chamber, wherein the flow rate is 0.1-5 sccm, and the introduction time is 1-20 s;
closing the nitrogen source, wherein the closing time is longer than the access time;
repeating the above steps at least twice.
In one embodiment, when the nitrogen source is nitrogen plasma, the thickness of the two-dimensional gallium nitride crystal is 1nm to 15nm, and when the nitrogen source is ammonia gas, the thickness of the two-dimensional gallium nitride crystal is 1nm to 30 nm.
In an embodiment, after the step S4, the method further includes:
and stripping the two-dimensional gallium nitride crystal from the metal sheet through a mechanical stripping process.
The invention has the following beneficial effects:
the preparation method of the two-dimensional gallium nitride crystal can increase the lateral mobility, so that an ultrathin sp3 hybridization mode and an sp2 hybridization hexagonal phase are easier to obtain, a high-crystallinity and high-flatness high-quality two-dimensional gallium nitride single crystal material is obtained, and the preparation method is expected to pave the way for preparing deep ultraviolet photoelectric and power electronic devices.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart of a process for producing a two-dimensional gallium nitride crystal according to the present invention;
FIG. 2a is a schematic structural view of a reaction furnace according to the present invention;
FIG. 2b is a schematic structural view of a reaction chamber according to the present invention;
FIG. 2c is a schematic view of the structure of a metal sheet and gallium metal thereon in a molten state according to the present invention;
FIG. 3 is a scanning electron microscope image of the surface topography of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 4 is an atomic force microscope photograph of the surface topography of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 5 is an X-ray energy spectrum of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 6 is a graph showing a cathode fluorescence spectrum of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 7 is a scanning electron microscope image of the surface topography of a two-dimensional gallium nitride crystal in example 2 of the present invention;
FIG. 8 is an atomic force microscope photograph of the surface topography of a two-dimensional gallium nitride crystal in example 2 of the present invention;
FIG. 9 is an X-ray energy spectrum of a two-dimensional gallium nitride crystal in example 2 of the present invention;
FIG. 10 is a graph showing a cathode fluorescence spectrum of a two-dimensional gallium nitride crystal in example 2 of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the invention discloses a preparation method of a two-dimensional gallium nitride crystal, comprising the following steps:
and S1, providing a metal sheet and cleaning.
Wherein, the metal sheet is selected from metal with stronger catalytic capability, such as tungsten sheet. Further, the surface of the metal piece is covered with a noble metal film as a catalyst, such as a gold film or a platinum film, and the thickness of the noble metal film is 100nm or more.
The cleaning steps of the metal sheet are as follows:
washing a metal sheet by using deionized water, and putting the metal sheet into a cleaned glass container;
ultrasonically cleaning the metal sheet by using ethanol, ultrasonically cleaning the metal sheet by using deionized water, and finally drying the metal sheet by using nitrogen.
Preferably, step S1 is preceded by:
ultrasonically cleaning a glass container (such as a beaker) by using deionized water, and ultrasonically cleaning the glass container by using acetone;
and repeating the steps to finish the cleaning of the glass container.
And S2, heating to melt gallium metal, and transferring the molten gallium metal onto the metal sheet.
Wherein the heating temperature for heating and melting the gallium metal is higher than the melting point (29.76 ℃) of the gallium metal, and the temperature is 30-2000 ℃.
S3, placing the metal sheet and the molten metal gallium into the reaction chamber, and vacuumizing the reaction chamber.
S4, heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to grow the two-dimensional gallium nitride crystal.
The nitrogen source is nitrogen plasma or ammonia gas, the constant temperature is 600-1100 ℃ when the nitrogen source is nitrogen plasma, and the constant temperature is more than or equal to 800 ℃ when the nitrogen source is ammonia gas.
Preferably, the nitrogen source is introduced by intermittent aeration, specifically:
introducing a nitrogen source into the reaction chamber, wherein the flow rate is 0.1-5 sccm, and the introduction time is 1-20 s;
closing the nitrogen source for 5-30 s;
repeating the above steps at least twice.
In the invention, when the nitrogen source is nitrogen plasma, the thickness of the two-dimensional gallium nitride crystal is 1 nm-15 nm, and when the nitrogen source is ammonia gas, the thickness of the two-dimensional gallium nitride crystal is 1 nm-30 nm.
Further, step S4 is followed by:
and stripping the two-dimensional gallium nitride crystal from the metal sheet through a mechanical stripping process.
The present invention is further illustrated by the following specific examples.
Example 1:
in the embodiment, gallium metal is used as a gallium source and forms an alloy with a metal tungsten sheet with strong catalytic capability, the alloy is placed in a reaction chamber, and nitrogen plasma is introduced into the reaction chamber, so that nitrogen atoms can be transmitted to the surface of the gallium metal, and the growth of a two-dimensional gallium nitride crystal is realized.
Specifically, the preparation method of the two-dimensional gallium nitride crystal in this embodiment includes the following steps:
1. and cleaning the glass container.
In this embodiment, the glass container is a beaker, which is ultrasonically cleaned with deionized water, and then ultrasonically cleaned with acetone, and repeatedly cleaned for many times.
2. Providing a metal sheet and cleaning.
In the embodiment, the metal sheet is a tungsten sheet, the surface of the tungsten sheet is covered with a gold film with the thickness of 100nm as a catalyst, and in other embodiments, a platinum film can also be used as the catalyst.
The cleaning steps of the tungsten sheet are as follows:
washing a tungsten sheet by using deionized water, and then putting the tungsten sheet into a cleaned beaker;
ultrasonically cleaning the tungsten sheet by using ethanol, ultrasonically cleaning the tungsten sheet by using deionized water, and finally drying the tungsten sheet by using nitrogen.
3. Heating to melt gallium metal, and transferring the molten gallium metal onto a tungsten sheet.
The heating temperature is required to be higher than the melting point (29.76 ℃) of gallium metal, and is 700 ℃ in the embodiment.
4. Fixing the sample (tungsten plate and molten gallium metal) on the tray, placing the whole in the reaction chamber, and vacuumizing the reaction chamber to 10 degree of vacuum-5Torr。
Fig. 2a is a schematic structural diagram of the reaction furnace in this embodiment, fig. 2b is a schematic structural diagram of the reaction chamber in this embodiment, and fig. 2c is a schematic structural diagram of the metal sheet and the molten gallium metal thereon in this embodiment.
5. And heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to perform growth of a two-dimensional gallium nitride crystal.
In this example, the nitrogen source was nitrogen plasma, and the constant temperature of the reaction chamber after heating was 700 ℃.
After the reaction chamber reaches a constant temperature, introducing a nitrogen source in an intermittent aeration mode to ensure that enough relaxation time exists in the growth process of the two-dimensional gallium nitride crystal.
In the embodiment, firstly, a nitrogen source is introduced into a reaction chamber, the flow rate is 0.5sccm, and the introduction time is 10 s; then closing the nitrogen source for 5 min; repeating the steps for 6 times until the growth of the two-dimensional gallium nitride crystal is finished, wherein the thickness of the two-dimensional gallium nitride crystal is about 8 nm.
And finally, moving the tray out of the reaction chamber.
Furthermore, the two-dimensional gallium nitride crystal can be stripped from the tungsten sheet through a mechanical stripping process.
Example 2:
in the embodiment, gallium metal is used as a gallium source and forms an alloy with a metal tungsten sheet with strong catalytic capability, the alloy is placed in a reaction chamber, ammonia gas is introduced into the reaction chamber, nitrogen atoms are obtained by heating and decomposing, and the nitrogen atoms can be transmitted to the surface of the gallium metal, so that the growth of a two-dimensional gallium nitride crystal is realized.
Specifically, the preparation method of the two-dimensional gallium nitride crystal in this embodiment includes the following steps:
1. and cleaning the glass container.
In this embodiment, the glass container is a beaker, which is ultrasonically cleaned with deionized water, and then ultrasonically cleaned with acetone, and repeatedly cleaned for many times.
2. Providing a metal sheet and cleaning.
In the embodiment, the metal sheet is a tungsten sheet, the surface of the tungsten sheet is covered with a gold film with the thickness of 100nm as a catalyst, and in other embodiments, a platinum film can also be used as the catalyst.
The cleaning steps of the tungsten sheet are as follows:
washing a tungsten sheet by using deionized water, and then putting the tungsten sheet into a cleaned beaker;
ultrasonically cleaning the tungsten sheet by using ethanol, ultrasonically cleaning the tungsten sheet by using deionized water, and finally drying the tungsten sheet by using nitrogen.
3. Heating to melt gallium metal, and transferring the molten gallium metal onto a tungsten sheet.
The heating temperature is preferably higher than the melting point of gallium metal (29.76 ℃), which is 900 ℃ in this example.
4. Fixing the sample (tungsten plate and molten gallium metal) on the tray, placing the whole in the reaction chamber, and vacuumizing the reaction chamber to 10 degree of vacuum-5Torr。
Fig. 2a is a schematic structural diagram of the reaction furnace in this embodiment, fig. 2b is a schematic structural diagram of the reaction chamber in this embodiment, and fig. 2c is a schematic structural diagram of the metal sheet and the molten gallium metal thereon in this embodiment.
5. And heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to perform growth of a two-dimensional gallium nitride crystal.
The nitrogen source in this example was ammonia gas, and the constant temperature of the reaction chamber after heating was 900 ℃.
After the reaction chamber reaches a constant temperature, introducing a nitrogen source in an intermittent aeration mode to ensure that enough relaxation time exists in the growth process of the two-dimensional gallium nitride crystal.
In the embodiment, firstly, a nitrogen source is introduced into a reaction chamber, the flow rate is 0.5sccm, and the introduction time is 10 s; then closing the nitrogen source for 5 min; repeating the steps for 6 times until the growth of the two-dimensional gallium nitride crystal is finished, wherein the thickness of the two-dimensional gallium nitride crystal is about 8 nm.
And finally, moving the tray out of the reaction chamber.
Furthermore, the two-dimensional gallium nitride crystal can be stripped from the tungsten sheet through a mechanical stripping process.
The crystals prepared in example 1 and example 2 were sealed in a vacuum bag and the quality of the crystals was characterized and tested as follows:
a. FIGS. 3 and 7 are scanning electron micrographs of the surface topography of two-dimensional gallium nitride crystals in example 1 and example 2, respectively;
b. FIGS. 4 and 8 are atomic force microscope images of the surface topography of two-dimensional gallium nitride crystals in example 1 and example 2, respectively;
c. FIGS. 5 and 9 are X-ray energy spectra of two-dimensional gallium nitride crystals in example 1 and example 2, respectively;
d. FIGS. 6 and 10 are graphs showing the cathode fluorescence spectra of two-dimensional gallium nitride crystals of examples 1 and 2, respectively.
The grown material can be judged to be a two-dimensional gallium nitride crystal by a scanning electron microscope picture, an X-ray energy spectrum and a cathode fluorescence spectrum.
The thickness of the grown two-dimensional gallium nitride crystal was measured by an atomic force microscope, and the maximum thickness of the two-dimensional gallium nitride crystal grown using nitrogen plasma as a nitrogen source in example 1 was about 15nm, and the maximum thickness of the two-dimensional gallium nitride crystal grown using ammonia gas as a nitrogen source in example 2 was about 30 nm.
According to the technical scheme, the invention has the following advantages:
the preparation method of the two-dimensional gallium nitride crystal can increase the lateral mobility, so that an ultrathin sp3 hybridization mode and an sp2 hybridization hexagonal phase are easier to obtain, a high-crystallinity and high-flatness high-quality two-dimensional gallium nitride single crystal material is obtained, and the preparation method is expected to pave the way for preparing deep ultraviolet photoelectric and power electronic devices.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115142134A (en) * | 2022-07-05 | 2022-10-04 | 杭州电子科技大学 | Method for preparing large-size two-dimensional crystalline gallium nitride by using liquid metal gallium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090081109A1 (en) * | 2005-11-17 | 2009-03-26 | Mosaic Crystals Ltd. | GaN CRYSTAL SHEET |
| US20090199763A1 (en) * | 2004-10-16 | 2009-08-13 | Armin Dadgar | Process for the production of gan or aigan crystals |
| US20100136770A1 (en) * | 2007-02-22 | 2010-06-03 | Mosaic Crystals | Group-iii metal nitride and preparation thereof |
| CN102634849A (en) * | 2005-04-04 | 2012-08-15 | 东北技术使者株式会社 | Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element |
| CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
| CN113053731A (en) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing gallium metal film and method for protecting gallium nitride substrate |
-
2021
- 2021-12-22 CN CN202111584076.XA patent/CN114232083B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090199763A1 (en) * | 2004-10-16 | 2009-08-13 | Armin Dadgar | Process for the production of gan or aigan crystals |
| CN102634849A (en) * | 2005-04-04 | 2012-08-15 | 东北技术使者株式会社 | Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element |
| US20090081109A1 (en) * | 2005-11-17 | 2009-03-26 | Mosaic Crystals Ltd. | GaN CRYSTAL SHEET |
| US20100136770A1 (en) * | 2007-02-22 | 2010-06-03 | Mosaic Crystals | Group-iii metal nitride and preparation thereof |
| CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
| CN113053731A (en) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing gallium metal film and method for protecting gallium nitride substrate |
Non-Patent Citations (1)
| Title |
|---|
| YUNXU CHEN等: "Growth of 2D GaN Single Crystals on Liquid Metals", 《JOURNAL OF AMERICAN CHEMISTRY SOCIETY》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115142134A (en) * | 2022-07-05 | 2022-10-04 | 杭州电子科技大学 | Method for preparing large-size two-dimensional crystalline gallium nitride by using liquid metal gallium |
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| CN114232083B (en) | 2023-07-21 |
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