CN114232083A - Preparation method of two-dimensional gallium nitride crystal - Google Patents
Preparation method of two-dimensional gallium nitride crystal Download PDFInfo
- Publication number
- CN114232083A CN114232083A CN202111584076.XA CN202111584076A CN114232083A CN 114232083 A CN114232083 A CN 114232083A CN 202111584076 A CN202111584076 A CN 202111584076A CN 114232083 A CN114232083 A CN 114232083A
- Authority
- CN
- China
- Prior art keywords
- metal
- gallium nitride
- reaction chamber
- nitride crystal
- metal sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a preparation method of a two-dimensional gallium nitride crystal, which comprises the following steps: s1, providing a metal sheet and cleaning; s2, heating to melt gallium metal, and transferring the molten gallium metal onto a metal sheet; s3, placing the metal sheet and the molten metal gallium into a reaction chamber, and vacuumizing the reaction chamber; s4, heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to grow the two-dimensional gallium nitride crystal. The preparation method of the two-dimensional gallium nitride crystal can increase the lateral mobility, so that an ultrathin sp3 hybridization mode and an sp2 hybridization hexagonal phase are easier to obtain, a high-crystallinity and high-flatness high-quality two-dimensional gallium nitride single crystal material is obtained, and the preparation method is expected to pave the way for preparing deep ultraviolet photoelectric and power electronic devices.
Description
Technical Field
The invention belongs to the technical field of semiconductor materials, and particularly relates to a preparation method of a two-dimensional gallium nitride crystal.
Background
Gallium nitride (GaN), which is one of the third generation nitride semiconductors, is a direct bandgap semiconductor having a forbidden band width of 3.4eV, and has excellent properties such as high electron mobility, high breakdown voltage, and high thermal conductivity. When the gallium nitride material is reduced to a two-dimensional scale, phenomena such as two-dimensional electron gas, increased lattice constant, blue shift of band gap and the like can occur.
Under the influence of quantum confinement effect, the two-dimensional gallium nitride has ideal deep ultraviolet light emission, exciton effect and electric transport characteristics. However, gallium nitride is susceptible to sp 3-hybridized longitudinal bonding and is difficult to obtain by conventional vapor phase growth or mechanical lift-off methods.
Therefore, in view of the above technical problems, it is necessary to provide a method for preparing a two-dimensional gallium nitride crystal.
Disclosure of Invention
In view of the above, the present invention provides a method for preparing a two-dimensional gallium nitride crystal.
In order to achieve the above object, an embodiment of the present invention provides the following technical solutions:
a method for producing a two-dimensional gallium nitride crystal, comprising:
s1, providing a metal sheet and cleaning;
s2, heating to melt gallium metal, and transferring the molten gallium metal onto a metal sheet;
s3, placing the metal sheet and the molten metal gallium into a reaction chamber, and vacuumizing the reaction chamber;
s4, heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to grow the two-dimensional gallium nitride crystal.
In one embodiment, the metal sheet is a tungsten sheet.
In one embodiment, the surface of the metal sheet is covered with a noble metal film, the noble metal film is a gold film or a platinum film, and the thickness of the noble metal film is greater than or equal to 100 nm.
In an embodiment, the step S1 specifically includes:
washing a metal sheet by using deionized water, and putting the metal sheet into a cleaned glass container;
ultrasonically cleaning the metal sheet by using ethanol, ultrasonically cleaning the metal sheet by using deionized water, and finally drying the metal sheet by using nitrogen.
In an embodiment, before the step S1, the method further includes:
ultrasonically cleaning a glass container by using deionized water, and ultrasonically cleaning the glass container by using acetone;
and repeating the steps to finish the cleaning of the glass container.
In an embodiment, in the step S2, the heating temperature for heating and melting the gallium metal is 30 ℃ to 2000 ℃.
In one embodiment, in step S4, the nitrogen source is nitrogen plasma, and the constant temperature is 600 ℃ to 1100 ℃; or, the nitrogen source is ammonia gas, and the constant temperature is more than or equal to 800 ℃.
In one embodiment, in the step S4, the introducing the nitrogen source into the reaction chamber specifically includes:
introducing a nitrogen source into the reaction chamber, wherein the flow rate is 0.1-5 sccm, and the introduction time is 1-20 s;
closing the nitrogen source, wherein the closing time is longer than the access time;
repeating the above steps at least twice.
In one embodiment, when the nitrogen source is nitrogen plasma, the thickness of the two-dimensional gallium nitride crystal is 1nm to 15nm, and when the nitrogen source is ammonia gas, the thickness of the two-dimensional gallium nitride crystal is 1nm to 30 nm.
In an embodiment, after the step S4, the method further includes:
and stripping the two-dimensional gallium nitride crystal from the metal sheet through a mechanical stripping process.
The invention has the following beneficial effects:
the preparation method of the two-dimensional gallium nitride crystal can increase the lateral mobility, so that an ultrathin sp3 hybridization mode and an sp2 hybridization hexagonal phase are easier to obtain, a high-crystallinity and high-flatness high-quality two-dimensional gallium nitride single crystal material is obtained, and the preparation method is expected to pave the way for preparing deep ultraviolet photoelectric and power electronic devices.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart of a process for producing a two-dimensional gallium nitride crystal according to the present invention;
FIG. 2a is a schematic structural view of a reaction furnace according to the present invention;
FIG. 2b is a schematic structural view of a reaction chamber according to the present invention;
FIG. 2c is a schematic view of the structure of a metal sheet and gallium metal thereon in a molten state according to the present invention;
FIG. 3 is a scanning electron microscope image of the surface topography of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 4 is an atomic force microscope photograph of the surface topography of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 5 is an X-ray energy spectrum of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 6 is a graph showing a cathode fluorescence spectrum of a two-dimensional gallium nitride crystal in example 1 of the present invention;
FIG. 7 is a scanning electron microscope image of the surface topography of a two-dimensional gallium nitride crystal in example 2 of the present invention;
FIG. 8 is an atomic force microscope photograph of the surface topography of a two-dimensional gallium nitride crystal in example 2 of the present invention;
FIG. 9 is an X-ray energy spectrum of a two-dimensional gallium nitride crystal in example 2 of the present invention;
FIG. 10 is a graph showing a cathode fluorescence spectrum of a two-dimensional gallium nitride crystal in example 2 of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the invention discloses a preparation method of a two-dimensional gallium nitride crystal, comprising the following steps:
and S1, providing a metal sheet and cleaning.
Wherein, the metal sheet is selected from metal with stronger catalytic capability, such as tungsten sheet. Further, the surface of the metal piece is covered with a noble metal film as a catalyst, such as a gold film or a platinum film, and the thickness of the noble metal film is 100nm or more.
The cleaning steps of the metal sheet are as follows:
washing a metal sheet by using deionized water, and putting the metal sheet into a cleaned glass container;
ultrasonically cleaning the metal sheet by using ethanol, ultrasonically cleaning the metal sheet by using deionized water, and finally drying the metal sheet by using nitrogen.
Preferably, step S1 is preceded by:
ultrasonically cleaning a glass container (such as a beaker) by using deionized water, and ultrasonically cleaning the glass container by using acetone;
and repeating the steps to finish the cleaning of the glass container.
And S2, heating to melt gallium metal, and transferring the molten gallium metal onto the metal sheet.
Wherein the heating temperature for heating and melting the gallium metal is higher than the melting point (29.76 ℃) of the gallium metal, and the temperature is 30-2000 ℃.
S3, placing the metal sheet and the molten metal gallium into the reaction chamber, and vacuumizing the reaction chamber.
S4, heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to grow the two-dimensional gallium nitride crystal.
The nitrogen source is nitrogen plasma or ammonia gas, the constant temperature is 600-1100 ℃ when the nitrogen source is nitrogen plasma, and the constant temperature is more than or equal to 800 ℃ when the nitrogen source is ammonia gas.
Preferably, the nitrogen source is introduced by intermittent aeration, specifically:
introducing a nitrogen source into the reaction chamber, wherein the flow rate is 0.1-5 sccm, and the introduction time is 1-20 s;
closing the nitrogen source for 5-30 s;
repeating the above steps at least twice.
In the invention, when the nitrogen source is nitrogen plasma, the thickness of the two-dimensional gallium nitride crystal is 1 nm-15 nm, and when the nitrogen source is ammonia gas, the thickness of the two-dimensional gallium nitride crystal is 1 nm-30 nm.
Further, step S4 is followed by:
and stripping the two-dimensional gallium nitride crystal from the metal sheet through a mechanical stripping process.
The present invention is further illustrated by the following specific examples.
Example 1:
in the embodiment, gallium metal is used as a gallium source and forms an alloy with a metal tungsten sheet with strong catalytic capability, the alloy is placed in a reaction chamber, and nitrogen plasma is introduced into the reaction chamber, so that nitrogen atoms can be transmitted to the surface of the gallium metal, and the growth of a two-dimensional gallium nitride crystal is realized.
Specifically, the preparation method of the two-dimensional gallium nitride crystal in this embodiment includes the following steps:
1. and cleaning the glass container.
In this embodiment, the glass container is a beaker, which is ultrasonically cleaned with deionized water, and then ultrasonically cleaned with acetone, and repeatedly cleaned for many times.
2. Providing a metal sheet and cleaning.
In the embodiment, the metal sheet is a tungsten sheet, the surface of the tungsten sheet is covered with a gold film with the thickness of 100nm as a catalyst, and in other embodiments, a platinum film can also be used as the catalyst.
The cleaning steps of the tungsten sheet are as follows:
washing a tungsten sheet by using deionized water, and then putting the tungsten sheet into a cleaned beaker;
ultrasonically cleaning the tungsten sheet by using ethanol, ultrasonically cleaning the tungsten sheet by using deionized water, and finally drying the tungsten sheet by using nitrogen.
3. Heating to melt gallium metal, and transferring the molten gallium metal onto a tungsten sheet.
The heating temperature is required to be higher than the melting point (29.76 ℃) of gallium metal, and is 700 ℃ in the embodiment.
4. Fixing the sample (tungsten plate and molten gallium metal) on the tray, placing the whole in the reaction chamber, and vacuumizing the reaction chamber to 10 degree of vacuum-5Torr。
Fig. 2a is a schematic structural diagram of the reaction furnace in this embodiment, fig. 2b is a schematic structural diagram of the reaction chamber in this embodiment, and fig. 2c is a schematic structural diagram of the metal sheet and the molten gallium metal thereon in this embodiment.
5. And heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to perform growth of a two-dimensional gallium nitride crystal.
In this example, the nitrogen source was nitrogen plasma, and the constant temperature of the reaction chamber after heating was 700 ℃.
After the reaction chamber reaches a constant temperature, introducing a nitrogen source in an intermittent aeration mode to ensure that enough relaxation time exists in the growth process of the two-dimensional gallium nitride crystal.
In the embodiment, firstly, a nitrogen source is introduced into a reaction chamber, the flow rate is 0.5sccm, and the introduction time is 10 s; then closing the nitrogen source for 5 min; repeating the steps for 6 times until the growth of the two-dimensional gallium nitride crystal is finished, wherein the thickness of the two-dimensional gallium nitride crystal is about 8 nm.
And finally, moving the tray out of the reaction chamber.
Furthermore, the two-dimensional gallium nitride crystal can be stripped from the tungsten sheet through a mechanical stripping process.
Example 2:
in the embodiment, gallium metal is used as a gallium source and forms an alloy with a metal tungsten sheet with strong catalytic capability, the alloy is placed in a reaction chamber, ammonia gas is introduced into the reaction chamber, nitrogen atoms are obtained by heating and decomposing, and the nitrogen atoms can be transmitted to the surface of the gallium metal, so that the growth of a two-dimensional gallium nitride crystal is realized.
Specifically, the preparation method of the two-dimensional gallium nitride crystal in this embodiment includes the following steps:
1. and cleaning the glass container.
In this embodiment, the glass container is a beaker, which is ultrasonically cleaned with deionized water, and then ultrasonically cleaned with acetone, and repeatedly cleaned for many times.
2. Providing a metal sheet and cleaning.
In the embodiment, the metal sheet is a tungsten sheet, the surface of the tungsten sheet is covered with a gold film with the thickness of 100nm as a catalyst, and in other embodiments, a platinum film can also be used as the catalyst.
The cleaning steps of the tungsten sheet are as follows:
washing a tungsten sheet by using deionized water, and then putting the tungsten sheet into a cleaned beaker;
ultrasonically cleaning the tungsten sheet by using ethanol, ultrasonically cleaning the tungsten sheet by using deionized water, and finally drying the tungsten sheet by using nitrogen.
3. Heating to melt gallium metal, and transferring the molten gallium metal onto a tungsten sheet.
The heating temperature is preferably higher than the melting point of gallium metal (29.76 ℃), which is 900 ℃ in this example.
4. Fixing the sample (tungsten plate and molten gallium metal) on the tray, placing the whole in the reaction chamber, and vacuumizing the reaction chamber to 10 degree of vacuum-5Torr。
Fig. 2a is a schematic structural diagram of the reaction furnace in this embodiment, fig. 2b is a schematic structural diagram of the reaction chamber in this embodiment, and fig. 2c is a schematic structural diagram of the metal sheet and the molten gallium metal thereon in this embodiment.
5. And heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to perform growth of a two-dimensional gallium nitride crystal.
The nitrogen source in this example was ammonia gas, and the constant temperature of the reaction chamber after heating was 900 ℃.
After the reaction chamber reaches a constant temperature, introducing a nitrogen source in an intermittent aeration mode to ensure that enough relaxation time exists in the growth process of the two-dimensional gallium nitride crystal.
In the embodiment, firstly, a nitrogen source is introduced into a reaction chamber, the flow rate is 0.5sccm, and the introduction time is 10 s; then closing the nitrogen source for 5 min; repeating the steps for 6 times until the growth of the two-dimensional gallium nitride crystal is finished, wherein the thickness of the two-dimensional gallium nitride crystal is about 8 nm.
And finally, moving the tray out of the reaction chamber.
Furthermore, the two-dimensional gallium nitride crystal can be stripped from the tungsten sheet through a mechanical stripping process.
The crystals prepared in example 1 and example 2 were sealed in a vacuum bag and the quality of the crystals was characterized and tested as follows:
a. FIGS. 3 and 7 are scanning electron micrographs of the surface topography of two-dimensional gallium nitride crystals in example 1 and example 2, respectively;
b. FIGS. 4 and 8 are atomic force microscope images of the surface topography of two-dimensional gallium nitride crystals in example 1 and example 2, respectively;
c. FIGS. 5 and 9 are X-ray energy spectra of two-dimensional gallium nitride crystals in example 1 and example 2, respectively;
d. FIGS. 6 and 10 are graphs showing the cathode fluorescence spectra of two-dimensional gallium nitride crystals of examples 1 and 2, respectively.
The grown material can be judged to be a two-dimensional gallium nitride crystal by a scanning electron microscope picture, an X-ray energy spectrum and a cathode fluorescence spectrum.
The thickness of the grown two-dimensional gallium nitride crystal was measured by an atomic force microscope, and the maximum thickness of the two-dimensional gallium nitride crystal grown using nitrogen plasma as a nitrogen source in example 1 was about 15nm, and the maximum thickness of the two-dimensional gallium nitride crystal grown using ammonia gas as a nitrogen source in example 2 was about 30 nm.
According to the technical scheme, the invention has the following advantages:
the preparation method of the two-dimensional gallium nitride crystal can increase the lateral mobility, so that an ultrathin sp3 hybridization mode and an sp2 hybridization hexagonal phase are easier to obtain, a high-crystallinity and high-flatness high-quality two-dimensional gallium nitride single crystal material is obtained, and the preparation method is expected to pave the way for preparing deep ultraviolet photoelectric and power electronic devices.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A method for producing a two-dimensional gallium nitride crystal, comprising:
s1, providing a metal sheet and cleaning;
s2, heating to melt gallium metal, and transferring the molten gallium metal onto a metal sheet;
s3, placing the metal sheet and the molten metal gallium into a reaction chamber, and vacuumizing the reaction chamber;
s4, heating the reaction chamber to a constant temperature, introducing a nitrogen source into the reaction chamber, and transmitting nitrogen atoms to the surface of the metal gallium to grow the two-dimensional gallium nitride crystal.
2. The method of claim 1, wherein the metal sheet is a tungsten sheet.
3. The production method according to claim 1 or 2, wherein the surface of the metal piece is covered with a noble metal film, the noble metal film is a gold film or a platinum film, and the thickness of the noble metal film is 100nm or more.
4. The preparation method according to claim 1, wherein the step S1 specifically comprises:
washing a metal sheet by using deionized water, and putting the metal sheet into a cleaned glass container;
ultrasonically cleaning the metal sheet by using ethanol, ultrasonically cleaning the metal sheet by using deionized water, and finally drying the metal sheet by using nitrogen.
5. The method as set forth in claim 4, wherein step S1 is preceded by:
ultrasonically cleaning a glass container by using deionized water, and ultrasonically cleaning the glass container by using acetone;
and repeating the steps to finish the cleaning of the glass container.
6. The method according to claim 1, wherein in step S2, the heating temperature for melting the gallium metal is 30 ℃ to 2000 ℃.
7. The method according to claim 1, wherein in step S4, the nitrogen source is nitrogen plasma, and the constant temperature is 600-1100 ℃; or, the nitrogen source is ammonia gas, and the constant temperature is more than or equal to 800 ℃.
8. The method according to claim 7, wherein in step S4, the step of introducing the nitrogen source into the reaction chamber is specifically as follows:
introducing a nitrogen source into the reaction chamber, wherein the flow rate is 0.1-5 sccm, and the introduction time is 1-20 s;
closing the nitrogen source, wherein the closing time is longer than the access time;
repeating the above steps at least twice.
9. The method according to claim 8, wherein the thickness of the two-dimensional gallium nitride crystal is 1 to 15nm when the nitrogen source is nitrogen plasma, and the thickness of the two-dimensional gallium nitride crystal is 1 to 30nm when the nitrogen source is ammonia gas.
10. The method as claimed in claim 1, wherein the step S4 is further followed by:
and stripping the two-dimensional gallium nitride crystal from the metal sheet through a mechanical stripping process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111584076.XA CN114232083B (en) | 2021-12-22 | 2021-12-22 | Preparation method of two-dimensional gallium nitride crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111584076.XA CN114232083B (en) | 2021-12-22 | 2021-12-22 | Preparation method of two-dimensional gallium nitride crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114232083A true CN114232083A (en) | 2022-03-25 |
| CN114232083B CN114232083B (en) | 2023-07-21 |
Family
ID=80761546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111584076.XA Active CN114232083B (en) | 2021-12-22 | 2021-12-22 | Preparation method of two-dimensional gallium nitride crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114232083B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115142134A (en) * | 2022-07-05 | 2022-10-04 | 杭州电子科技大学 | Method for preparing large-size two-dimensional crystalline gallium nitride by using liquid metal gallium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090081109A1 (en) * | 2005-11-17 | 2009-03-26 | Mosaic Crystals Ltd. | GaN CRYSTAL SHEET |
| US20090199763A1 (en) * | 2004-10-16 | 2009-08-13 | Armin Dadgar | Process for the production of gan or aigan crystals |
| US20100136770A1 (en) * | 2007-02-22 | 2010-06-03 | Mosaic Crystals | Group-iii metal nitride and preparation thereof |
| CN102634849A (en) * | 2005-04-04 | 2012-08-15 | 东北技术使者株式会社 | Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element |
| CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
| CN113053731A (en) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing gallium metal film and method for protecting gallium nitride substrate |
-
2021
- 2021-12-22 CN CN202111584076.XA patent/CN114232083B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090199763A1 (en) * | 2004-10-16 | 2009-08-13 | Armin Dadgar | Process for the production of gan or aigan crystals |
| CN102634849A (en) * | 2005-04-04 | 2012-08-15 | 东北技术使者株式会社 | Method for growth of gan single crystal, method for preparation of gan substrate, process for producing gan-based element, and gan-based element |
| US20090081109A1 (en) * | 2005-11-17 | 2009-03-26 | Mosaic Crystals Ltd. | GaN CRYSTAL SHEET |
| US20100136770A1 (en) * | 2007-02-22 | 2010-06-03 | Mosaic Crystals | Group-iii metal nitride and preparation thereof |
| CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
| CN113053731A (en) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing gallium metal film and method for protecting gallium nitride substrate |
Non-Patent Citations (1)
| Title |
|---|
| YUNXU CHEN等: "Growth of 2D GaN Single Crystals on Liquid Metals", 《JOURNAL OF AMERICAN CHEMISTRY SOCIETY》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115142134A (en) * | 2022-07-05 | 2022-10-04 | 杭州电子科技大学 | Method for preparing large-size two-dimensional crystalline gallium nitride by using liquid metal gallium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114232083B (en) | 2023-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107611004B (en) | method for preparing self-supporting GaN substrate material | |
| Borgström et al. | Interface study on heterostructured GaP–GaAs nanowires | |
| CN113549898B (en) | Preparation method of two-dimensional gallium nitride film finite field template and prepared two-dimensional gallium nitride film | |
| CN114232083B (en) | Preparation method of two-dimensional gallium nitride crystal | |
| CN113026096A (en) | Two-dimensional semiconductor material SnSe2Method for producing single crystal | |
| Patsha et al. | Halide chemical vapor deposition of 2D semiconducting atomically-thin crystals: From self-seeded to epitaxial growth | |
| CN110055589B (en) | Large-size single-layer hexagonal boron nitride single crystal or film and preparation method thereof | |
| Xia et al. | Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD | |
| CN106783553B (en) | III-nitride micro-column structure with graphene/dielectric material as composite substrate and preparation method thereof | |
| Bakin et al. | Vapour phase transport growth of ZnO layers and nanostructures | |
| CN102828250A (en) | Growing method for GaN nanowire | |
| CN111180311B (en) | Method for reducing Si concentration at interface of GaN substrate and epitaxial layer | |
| Kumar et al. | Growth, properties, and applications of β-Ga2O3 nanostructures | |
| CN109023296B (en) | Method for growing molybdenum-tungsten-selenium alloy on fluorophlogopite substrate through chemical vapor deposition | |
| CN114381806B (en) | Preparation method of two-dimensional aluminum nitride crystal | |
| Ghazali et al. | Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate | |
| Ebrahimzadeh et al. | Properties and modification of native oxides of InP (100) | |
| Uchida et al. | III-V Nitride Growth by Atmospheric-Pressure MOVPE with a Three-Layered Flow Channel | |
| KR101586792B1 (en) | A method for manufacturing a nanowire structure using a graphene and a nanowire structure manufactured by the same | |
| Wu et al. | Luminescence enhancement and enlarged dirac point shift of MoS2/graphene hetero-structure photodetectors with postgrowth annealing treatment | |
| CN113948612A (en) | Preparation method of one-dimensional platinum diselenide nanobelt and prepared platinum diselenide nanobelt | |
| Yu et al. | The growth of GeSn layer on patterned si substrate by MBE method | |
| CN111607775A (en) | Method for preparing two-dimensional h-BNC hybrid film with adjustable components | |
| US11441234B2 (en) | Liquid phase epitaxy of III-V materials and alloys | |
| CN115142134B (en) | Method for preparing large-size two-dimensional crystalline gallium nitride by utilizing liquid gallium metal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |