CN114204467B - Switch cabinet insulation level lifting method based on insulation partition optimization - Google Patents
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B3/00—Apparatus specially adapted for the manufacture, assembly, or maintenance of boards or switchgear
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B19/00—Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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Abstract
The invention relates to a switch cabinet insulation level lifting method based on insulation partition optimization, which is characterized by comprising the following steps of: manufacturing an insulating separator sample wafer, measuring the atomic types, the content and the chemical bond proportion of the surface of the sample wafer, establishing a separator molecular structure model, optimizing, calculating the band gap width and the electron affinity of separator sample wafer molecules, adding specific elements into the optimal structure model of the separator molecules, optimizing the molecular structure model again, constructing a low secondary electron emission coefficient surface structure with a wide scattering cross section and a high escape barrier, and further modifying the insulating separator by adopting ion sputtering, vacuum evaporation and chemical etching treatment. The invention has reasonable design, and can improve the insulation level of the switch cabinet in high-temperature, high-humidity, condensation and pollution environments by reasonably modifying the surface state of the partition plate, thereby providing theoretical basis and practical method for improving the insulation level and operation reliability of the electric power equipment.
Description
Technical Field
The invention belongs to the technical field of high-voltage switches, and particularly relates to a switch cabinet insulation level lifting method based on insulation partition optimization.
Background
Currently, high-voltage switches are rapidly developing to intelligent, miniaturized and composite insulation, and in order to secure a sufficient insulation level, a separator is largely used in a switchgear. However, in recent years, partial discharge faults in the switch cabinet frequently occur, and the safe and stable operation of the power grid is seriously affected. According to statistics, in the 40.5kV switch cabinet fault cases of 27 provincial power grid companies in the recent 5 years, the flashover fault proportion of the switch cabinet caused by the reasons of reduced insulation margin, insufficient safety distance, reduced insulation reliability and the like is about 60%, and the improvement of the insulation level of the switch cabinet becomes an urgent requirement for guaranteeing the safe operation of a power system.
In recent years, students at home and abroad develop a plurality of researches on the aspects of switch cabinet insulation level assessment, latent fault diagnosis, analysis of reasons of partial discharge in the cabinet and the like, and further analyze the solid insulation surface flashover process and macroscopic influence factors thereof, thereby providing a secondary electron avalanche model. The secondary electron avalanche model has higher universality and is prominent in the analysis of the surface flashover mechanism of the electric equipment and the research and development of the surface electrical resistance optimization technology. However, there are few researches at home and abroad on secondary electron multiplication mechanisms based on the intrinsic characteristics of insulating materials, and a great deal of blank is found in the technical search of surface structure construction with low secondary electron emission coefficient based on the atomic composition and molecular bonding structure of the insulating materials.
The surface state is a direct factor influencing the secondary electron emission characteristics of the material, such as oxidation, dirt adhesion, water molecule adsorption, hydroxyl radical adsorption and other reasons, so that the surface energy of the material is often increased, the average scattering free path of secondary electrons in the material is prolonged, the escape capacity is enhanced, and the secondary electron emission is promoted. In addition, due to lack of mechanism analysis on secondary electron emission process, the technical method for improving the interfacial electrical resistance of the insulating material by inhibiting secondary electron emission is still mainly based on tests, and a comprehensive theoretical guidance of a system is needed. Therefore, how to form the separator with strong pertinence and high efficiency and the optimization of the electrical resistance of the surface of the separator is an urgent problem to be solved at present.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a method for improving the insulation level of a switch cabinet based on insulation baffle optimization, realizes theoretical evaluation of secondary electron multiplication capacity of the baffle, provides theoretical basis for constructing a surface structure with a low secondary electron emission coefficient of a wide scattering cross section and a high escape barrier, forms a highly-targeted and highly-effective baffle surface electrical resistance optimization method, and further effectively improves the insulation level of the switch cabinet.
The invention solves the technical problems in the prior art by adopting the following technical scheme:
a switch cabinet insulation level lifting method based on insulation partition optimization comprises the following steps:
step 1, manufacturing an insulating partition plate sample, carrying out ultrasonic cleaning on the insulating partition plate sample, and placing the insulating partition plate sample in a vacuum box for preservation after blow-drying;
step 2, placing the insulating partition plate sample into an X-ray photoelectron spectrometer, measuring the atomic species, the content and the chemical bond ratio of the surface of the sample, and establishing a partition plate molecular structure model;
step 3, performing geometric optimization on the partition board molecular structure model established in the step 2, and obtaining the point with the minimum energy on the potential energy surface through numerical comparison to obtain the partition board molecular optimal structure model;
step 4, calculating the optimal structure model of the separator molecules obtained in the step 3 to obtain the band gap width of the separator sample wafer molecules, and calculating the electron affinity of the sample wafer molecules;
step 6, calculating the model optimized in the step 5 to obtain the band gap width of the sample wafer molecules of the separator, calculating the electron affinity of the sample wafer molecules to obtain the influence rule of atomic species, content and chemical bond occupation ratio on the band gap width and electron affinity of the separator molecules, performing physical and chemical modification on the sample wafer of the separator by a magnetron sputtering technology based on the rule, and constructing a surface structure with a wide scattering section and a high escape barrier and low secondary electron emission coefficient;
and 7, further optimizing the insulating partition board by adopting ion sputtering, vacuum evaporation and chemical etching treatment on the basis of the surface structure with low secondary electron emission coefficient.
In addition, the step 1 adopts absolute ethyl alcohol, pure water and acetone to ultrasonically clean the insulating partition plate sample wafer for 5min respectively; and (5) drying by adopting nitrogen, and then placing the dried product into a vacuum box for storage for 20min.
Furthermore, the step 2 builds a molecular structure model of the separator by using molecular dynamics simulation software Gaussian.
And the atomic species, the content and the chemical bond ratio in the molecular structure model of the separator established in the step 2 are consistent with the measurement result, and meanwhile, the atomic arrangement is mainly linear, aromatic ring type, plane triangle type and triangular cone type, and the chemical bonds comprise single bond, double bond and triple bond types.
In addition, in the step 3, molecular dynamics simulation software Gaussian is adopted to geometrically optimize a separator molecular structure model, the optimized separator molecular optimal structure model has the lowest potential energy in a three-dimensional space, and the model is of a linear type, aromatic ring type, plane triangle type or triangular cone type structure, and the chemical bond comprises single bond, double bond and triple bond types.
And, step 4 calculates the band gap width of the sample wafer molecule of the separator by using molecular dynamics simulation software Gaussian, and calculates the electron affinity of the sample wafer molecule by using the following formula:
EA＝E A -E A-
wherein E is potential energy of the optimal structure model, A is the optimal structure model, and A-is negative monovalent A ions.
The specific element added in the step 5 is fluorine, carbon or silicon, so that the atomic percent of the specific element and oxygen is between 0 and 55 percent; the re-optimized model is mainly of linear type, aromatic ring type, plane triangle type and triangle cone type structures, and the chemical bonds comprise single bond, double bond and triple bond types.
The specific implementation method of the step 6 is as follows: calculating the model optimized in the step 5 by using molecular dynamics simulation software Gaussian, calculating the electron affinity of a sample wafer molecule, obtaining the influence rule of atomic species, content and chemical bond ratio on the band gap width and electron affinity of a baffle plate molecule, performing physicochemical modification on the baffle plate sample wafer by using a magnetron sputtering technology based on the rule, regulating and controlling gas species, target material type, power, time and air pressure in the sputtering process, and constructing a low secondary electron emission coefficient surface structure with a wide scattering section and a high escape barrier, wherein the formula for calculating the electron affinity of the sample wafer molecule is as follows:
EA＝E A -E A-
wherein E is potential energy of the optimal structure model, A is the optimal structure model, and A-is negative monovalent A ions;
and the gas type is F 2 /N 2 、CF 4 /N 2 The prime target material is Si, PTFE or graphite, the power is 50W-300W, the time is 30min-240min, and the air pressure is 0.5Pa-3Pa.
In addition, in the step 7, in the processes of ion sputtering, vacuum evaporation and chemical etching, parameters of power, time, air pressure and vacuum degree are regulated, wherein the power is 20W-200W, the air pressure is 0.5Pa-3Pa, the time is 10min-60min, and the vacuum degree is 0.01Pa-0.5Pa.
The invention has the advantages and positive effects that:
1. according to the invention, atomic types, contents and chemical bond ratios of the surface of a sample wafer are measured through an X-ray photoelectron spectrometer, a molecular structure model of a partition board is established through measuring the chemical components of the sample wafer, the influence rules of the atomic types, the contents and the chemical bond ratios on the band gap width and the electron affinity of the partition board are calculated through simulation, the partition board is subjected to surface physicochemical modification based on simulation results, a low secondary electron emission coefficient surface structure with a wide scattering cross section and a high escape barrier is constructed, finally, parameters such as power, time, air pressure/vacuum degree and the like are regulated and controlled through adopting ion sputtering, vacuum evaporation and chemical etching technology, roughness and hydrophobicity are improved, secondary electron emission is inhibited, the surface electrical resistance is improved, and the method is applied to technical development and parameter optimization work of inhibiting secondary electron emission by a solid insulating material, improving the surface hydrophobicity and enhancing the surface electrical resistance, so that theoretical basis and practical method are provided for improving the insulation level and operation reliability of electric equipment.
2. The invention has reasonable design, and can improve the insulation level of the switch cabinet in high-temperature, high-humidity, condensation and pollution environments by reasonably modifying the surface state of the partition plate.
Drawings
FIG. 1 is a schematic diagram showing the influence rule of the percentage of carbon atoms on the band gap width after modification by the method of the invention;
FIG. 2 is a schematic diagram showing the influence rule of fluorine atom content on electron affinity after modification by the method of the invention.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
The invention provides a switch cabinet insulation level lifting method based on insulation partition optimization, which comprises the following steps:
(1) Cutting the insulating partition plate into insulating partition plate sample pieces with the side length of 2cm multiplied by 2cm, respectively ultrasonically cleaning the insulating partition plate sample pieces for 5min by using absolute ethyl alcohol, pure water and acetone, drying the insulating partition plate sample pieces by using nitrogen, and placing the insulating partition plate sample pieces into a vacuum box for preserving for 20min.
(2) And (3) placing the dried insulating partition plate sample into an X-ray photoelectron spectrometer, measuring the atomic types, the content and the chemical bond ratio of the surface of the sample, and establishing a partition plate molecular structure model by using molecular dynamics simulation software Gaussian, wherein the atomic types, the content and the chemical bond ratio in the model are consistent with the measurement result, and meanwhile, the atomic arrangement is mainly linear, aromatic ring type, plane triangle type and triangular pyramid type, and the chemical bonds comprise single bonds, double bonds, triple bonds and the like.
(3) And (3) carrying out geometric optimization on the molecular structure model of the separator built in the step (2) based on molecular dynamics simulation software Gaussian, wherein each configuration has an energy value on the premise of not decomposing the molecules, and all the energy values form a potential energy surface, so that the point with the minimum energy on the potential energy surface is obtained through geometric optimization, and the configuration corresponding to the point is the optimal structure model. The optimal structure model has the lowest potential energy in a three-dimensional space, and the model is of a linear type, an aromatic ring type, a plane triangle type, a triangular cone type and other structures, and the chemical bond comprises single bonds, double bonds, triple bonds and other types.
(4) And (3) calculating the optimized optimal structural model in the step (3) based on molecular dynamics simulation software Gaussian to obtain the band gap width of the sample wafer molecules of the separator, and calculating the electron affinity of the sample wafer molecules according to a formula (1), wherein E is the potential energy of the optimal structural model, A is the optimal structural model, and A-is negative monovalent A ions.
EA＝E A -E A - (1)
(5) Adding specific elements such as fluorine, carbon or silicon into the optimized molecular model, changing the atomic percentages of fluorine, carbon, silicon and oxygen to enable the atomic percentages of the specific atoms to be between 0 and 55 percent, optimizing the molecular structure model again to enable the optimized model to have the lowest potential energy, wherein the model mainly comprises linear type, aromatic ring type, plane triangle type, triangle cone type and other structures, and the chemical bonds comprise single bonds, double bonds, triple bonds and other types.
(6) Calculating the optimized model in the step 5) based on molecular dynamics simulation software Gaussian to obtain the band gap width of the molecules of the sample wafer of the separator, calculating the electron affinity of the molecules of the sample wafer according to a formula (1) to obtain the influence rule of atomic types, contents and chemical bond occupation ratios on the band gap width and electron affinity of the molecules of the separator, performing physical and chemical modification on the sample wafer of the separator based on the rule by using a magnetron sputtering technology, and regulating and controlling the gas types, target types, power, time and air pressure in the sputtering process, wherein the gas types are F 2 /N 2 、CF 4 /N 2 The target material is Si, PTFE or graphite, the power is 50W-300W, the time is 30min-240min, the air pressure is 0.5Pa-3Pa, and a low secondary electron emission coefficient table with a wide scattering cross section and a high escape barrier is constructedA face structure.
(7) On the basis of a low secondary electron emission coefficient surface structure, the ion sputtering, vacuum evaporation and chemical etching technology is adopted, the parameters such as power, time, air pressure/vacuum degree and the like are regulated and controlled, the power is 20W-200W, the air pressure is 0.5Pa-3Pa, the time is 10min-60min, the vacuum degree is 0.01Pa-0.5Pa, the roughness and hydrophobicity are improved, the secondary electron emission is inhibited, and the surface electrical resistance is improved.
In this example, the validity test was performed using the method described above, and the results were as follows:
the change rule of the band gap width of the sample wafer molecule of the separator after being modified by the invention is shown in fig. 1, the percentage content of carbon atoms is increased by magnetron sputtering to be 10%, 20%, 30%, 40% and 50% in sequence, and the band gap width can be seen to be reduced from 8.75eV to 3.46eV through 6.43eV, 5.98eV and 5.88 eV. The method has the advantages that the content of carbon atoms is improved through magnetron sputtering, the band gap width can be effectively shortened, secondary electron emission in the band gap is restrained, and the surface flashover voltage is improved.
FIG. 2 shows the electron affinity change rule of the sample wafer molecules of the separator modified by the method, the fluorine atom percentage content is increased from 5% to 25% by magnetron sputtering, and the electron affinity can be seen to rise from 0.34eV to 1.66eV through 0.38eV, 0.49eV and 0.52 eV. The method has the advantages that the fluorine atom content is improved through magnetron sputtering, the electron affinity can be effectively increased, the secondary electron emission in the electron source is restrained, and the surface flashover voltage is improved.
It should be emphasized that the examples described herein are illustrative rather than limiting, and therefore the invention includes, but is not limited to, the examples described in the detailed description, as other embodiments derived from the technical solutions of the invention by a person skilled in the art are equally within the scope of the invention.
Claims (10)
1. A switch cabinet insulation level lifting method based on insulation partition optimization is characterized by comprising the following steps of: the method comprises the following steps:
step 1, manufacturing an insulating partition plate sample, carrying out ultrasonic cleaning on the insulating partition plate sample, and placing the insulating partition plate sample in a vacuum box for preservation after blow-drying;
step 2, placing the insulating partition plate sample into an X-ray photoelectron spectrometer, measuring the atomic species, the content and the chemical bond ratio of the surface of the sample, and establishing a partition plate molecular structure model;
step 3, performing geometric optimization on the partition board molecular structure model established in the step 2, and obtaining the point with the minimum energy on the potential energy surface through numerical comparison to obtain the partition board molecular optimal structure model;
step 4, calculating the optimal structure model of the separator molecules obtained in the step 3 to obtain the band gap width of the separator sample wafer molecules, and calculating the electron affinity of the sample wafer molecules;
step 5, adding specific elements into the optimal structure model of the separator molecules obtained in the step 3, changing the percentage of the specific elements and oxygen atoms, and optimizing the molecular structure model again to enable the optimized model to have the lowest potential energy;
step 6, calculating the model optimized in the step 5 to obtain the band gap width of the sample wafer molecules of the separator, calculating the electron affinity of the sample wafer molecules to obtain the influence rule of atomic species, content and chemical bond occupation ratio on the band gap width and electron affinity of the separator molecules, performing physical and chemical modification on the sample wafer of the separator by a magnetron sputtering technology based on the rule, and constructing a surface structure with a wide scattering section and a high escape barrier and low secondary electron emission coefficient;
and 7, further optimizing the insulating partition board by adopting ion sputtering, vacuum evaporation and chemical etching treatment on the basis of the surface structure with low secondary electron emission coefficient.
2. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: the step 1 adopts absolute ethyl alcohol, pure water and acetone to ultrasonically clean insulating baffle sample wafers for 5min respectively; and (5) drying by adopting nitrogen, and then placing the dried product into a vacuum box for storage for 20min.
3. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: and 2, establishing a molecular structure model of the separator by using molecular dynamics simulation software Gaussian.
4. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: and (2) the atomic species, the content and the chemical bond ratio in the molecular structure model of the separator established in the step (2) are consistent with the measurement result, and meanwhile, the atomic arrangement is mainly linear, aromatic ring type, plane triangle type and triangle cone type, and the chemical bond comprises single bond, double bond and triple bond types.
5. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: and 3, geometrically optimizing a separator molecular structure model by using molecular dynamics simulation software Gaussian, wherein the optimized separator molecular optimal structure model has the lowest potential energy in a three-dimensional space, and is of a linear type, an aromatic ring type, a plane triangle type or a triangular cone type structure, and the chemical bond comprises single bond, double bond and triple bond types.
6. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: and 4, calculating the band gap width of the sample wafer molecules of the separator by using molecular dynamics simulation software Gaussian, and calculating the electron affinity of the sample wafer molecules by using the following steps:
EA＝E A -E A-
wherein E is potential energy of the optimal structure model, A is the optimal structure model, and A-is negative monovalent A ions.
7. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: the specific element added in the step 5 is fluorine, carbon or silicon, so that the atomic percentage of the specific element and oxygen is between 0 and 55 percent; the re-optimized model is mainly of linear type, aromatic ring type, plane triangle type and triangle cone type structures, and the chemical bonds comprise single bond, double bond and triple bond types.
8. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: the specific implementation method of the step 6 is as follows: calculating the model optimized in the step 5 by using molecular dynamics simulation software Gaussian, calculating the electron affinity of a sample wafer molecule, obtaining the influence rule of atomic species, content and chemical bond ratio on the band gap width and electron affinity of a baffle plate molecule, performing physicochemical modification on the baffle plate sample wafer by using a magnetron sputtering technology based on the rule, regulating and controlling gas species, target material type, power, time and air pressure in the sputtering process, and constructing a low secondary electron emission coefficient surface structure with a wide scattering section and a high escape barrier, wherein the formula for calculating the electron affinity of the sample wafer molecule is as follows:
EA＝E A -E A-
wherein E is potential energy of the optimal structure model, A is the optimal structure model, and A-is negative monovalent A ions.
9. The insulation spacer-based optimized switchgear insulation level elevation method of claim 8, wherein: the gas type is F 2 /N 2 、CF 4 /N 2 The prime target material is Si, PTFE or graphite, the power is 50W-300W, the time is 30min-240min, and the air pressure is 0.5Pa-3Pa.
10. The insulation spacer optimization-based switch cabinet insulation level lifting method according to claim 1, wherein the method comprises the following steps: in the step 7, in the processes of ion sputtering, vacuum evaporation and chemical etching, parameters of power, time, air pressure and vacuum degree are regulated, wherein the power is 20W-200W, the air pressure is 0.5Pa-3Pa, the time is 10min-60min, and the vacuum degree is 0.01Pa-0.5Pa.
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| JP2004356048A (en) * | 2003-05-30 | 2004-12-16 | Canon Inc | Electrode material for lithium secondary battery, electrode structure having the electrode material and lithium secondary battery having the electrode structure |
| CN106950794A (en) * | 2017-05-19 | 2017-07-14 | 国网天津市电力公司 | Suitable for the x-ray film darkroom disposal device of conventional test room |
| CN112382946A (en) * | 2020-11-04 | 2021-02-19 | 笑聪精密机械(苏州)有限公司 | Corrosion-resistant anti-interference electric control cabinet and production method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004356048A (en) * | 2003-05-30 | 2004-12-16 | Canon Inc | Electrode material for lithium secondary battery, electrode structure having the electrode material and lithium secondary battery having the electrode structure |
| CN106950794A (en) * | 2017-05-19 | 2017-07-14 | 国网天津市电力公司 | Suitable for the x-ray film darkroom disposal device of conventional test room |
| CN112382946A (en) * | 2020-11-04 | 2021-02-19 | 笑聪精密机械(苏州)有限公司 | Corrosion-resistant anti-interference electric control cabinet and production method thereof |
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