CN114204413B - Ion implantation assisted oxidation type VCSEL preparation method - Google Patents
Ion implantation assisted oxidation type VCSEL preparation method Download PDFInfo
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- CN114204413B CN114204413B CN202111356192.6A CN202111356192A CN114204413B CN 114204413 B CN114204413 B CN 114204413B CN 202111356192 A CN202111356192 A CN 202111356192A CN 114204413 B CN114204413 B CN 114204413B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 53
- 230000003647 oxidation Effects 0.000 title claims abstract description 14
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000010410 layer Substances 0.000 claims abstract description 47
- 239000011241 protective layer Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000002513 implantation Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000011056 performance test Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000008719 thickening Effects 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005457 optimization Methods 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to an ion implantation assisted oxidation type VCSEL preparation method, which comprises the following steps of S1, growing an epitaxial structure layer on a substrate, and growing P-plane metal on the epitaxial structure layer; s2, growing a first protection layer above the P-surface metal; s3, after the first protective layer grows, an oxide layer is manufactured; s4, after the oxidized aperture is etched, growing a second protective layer; s5, performing photoetching patterns, then performing ion implantation, controlling the inner diameter of the ion implantation to be larger than the diameter of the oxidation hole, and controlling the inner diameter of the ion implantation to be smaller than the inner diameter of the P-surface metal; s6, growing a third protective layer again; s7, etching through holes; and S8, treating the P-surface metal and growing the N-surface metal to obtain the laser. The invention can maintain the high conductivity of the part of the surface of the epitaxial layer, which is in contact with the P metal, by controlling the inner diameter of the ion implantation to be larger than the diameter of the oxidation hole but smaller than the inner diameter of the P metal, so that good ohmic contact is still maintained between the metal and the semiconductor.
Description
Technical Field
The invention relates to the technical field of laser preparation, in particular to an ion implantation-assisted oxidation type VCSEL preparation method.
Background
The Vertical Cavity Surface Emitting Laser (VCSEL) structure is divided into a p Bragg reflector (p-DBR), an n Bragg reflector (n-DBR) and an active region, wherein a quantum well of the active region performs photoelectric conversion, and a laser resonant cavity is formed between the p-DBR and the n-DBR. VCSELs require spatial confinement of both the electric and optical fields to provide maximum photoelectric conversion efficiency.
Typically, the ion implanted region becomes an electrically isolated region, and early non-oxidized VCSELs were current limited by ion implantation alone, resulting in lasing. However, due to the limitation of the optical field caused by the lack of the oxide layer, the photoelectric conversion efficiency is low (about 20%).
Existing VCSEL structures rely mainly on oxide layers for current and optical field confinement. Since the confinement is limited only in the vicinity of the oxide layer, the current confinement decreases with distance from the oxide layer. In some processes, ion Implantation (Ion Implantation) is used to assist in current limiting. Particularly, in the VCSEL having a plurality of PN junctions (Multiple Junction) for an automobile radar, since the resonator is longer, the current is laterally extended without increasing the current limitation, thereby reducing the photoelectric conversion efficiency, and the structure of fig. 1 is generally adopted. In which the current diffuses faster in the region away from the oxide layer 6, the oxide layer 6 and the active region being between the N-bragg mirror 3 and the P-bragg mirror 7.
The semiconductor material loses high conductivity due to the conventional ion implantation process, wherein the inner diameter of the ion implantation needs to be larger than the outer diameter of the P metal, so that current can flow into the active region. However, the size of the P metal limits the current region limited by ion implantation, so that the current limiting effect is weak.
As shown in fig. 2, the use of multiple sets of oxide layers 6 may reduce current diffusion between oxide layers 6, but multiple sets of oxide layers 6 tend to be limited in actual growth by process instability and thus difficult to control. However, even with multiple sets of oxide layers 6, the current limit after passing through the last set of active regions is limited by the wider ion implanted regions.
Disclosure of Invention
The invention aims to provide an ion implantation-assisted oxidation type VCSEL preparation method which at least can solve part of defects in the prior art.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions: an ion implantation assisted oxidation type VCSEL preparation method comprises the following steps:
s1, growing an epitaxial structure layer on a substrate, and growing P-surface metal on the epitaxial structure layer;
s2, after the P-surface metal grows, growing a first protection layer above the P-surface metal;
s3, after the first protective layer grows, an oxide layer is manufactured, wherein the manufacturing mode is that channel etching is firstly carried out, oxidation is carried out on the basis of the channel etching, and an oxidized aperture is etched;
s4, after the oxidized aperture is etched, growing a second protective layer;
s5, after the second protective layer grows, performing photoetching patterns, then performing ion implantation, controlling the inner diameter of the ion implantation to be larger than the diameter of the oxidation hole, wherein the inner diameter of the ion implantation is smaller than the inner diameter of the P-surface metal;
s6, after the ion implantation is finished, growing a third protective layer again;
s7, etching the through hole after the third protective layer grows;
and S8, treating the P-surface metal and growing the N-surface metal to obtain the laser.
Further, in the step S5, the species and the dose of the ion implantation include he+ ion having an implantation energy of 370keV and a dose of 4e+13, he+ ion having an implantation energy of 560keV and a dose of 3e+13, h+ ion having an implantation energy of 300keV and a dose of 3.5e+14, h+ ion having an implantation energy of 370keV and a dose of 3.5e+14, and h+ ion having an implantation energy of 420keV and a dose of 5e+14.
Further, the oxide layer in the step S3 has multiple layers.
Further, the first protective layer, the second protective layer and the third protective layer are all silicon oxide, silicon nitride or silicon oxynitride.
Further, in the step S8, the treatment of the P-side metal includes electroplating and thickening the P-side metal, and then performing dicing street etching.
Further, in the step S8, wafer thinning is performed before N-face metal growth, and the alloy is subjected to high temperature after growth.
Further, after the step S8, performance test and wafer dicing are performed.
Compared with the prior art, the invention has the beneficial effects that: the preparation method of the oxidized VCSEL assisted by ion implantation comprises the steps of controlling the inner diameter of ion implantation to be larger than the diameter of an oxidized hole, wherein the range of the inner diameter smaller than that of P-surface metal can enable a part of the surface of an epitaxial layer, which is in contact with the P-surface metal, with high conductivity to maintain high conductivity, so that good ohmic contact between the metal and a semiconductor is kept, and meanwhile, a lower epitaxial structure layer is non-conductive, and current is limited; for the structure of multiple oxide layers, the current passing through the last active region can be better limited; the slope efficiency increases due to the better restriction on the current. The voltage is correspondingly improved due to the narrowing of the current channel, but the overall photoelectric conversion efficiency is improved by about 4-8%; because the current is better limited, the junction area capacitance of the material is reduced, the intrinsic capacitance parameter is reduced, and the high-frequency modulation bandwidth of the chip is improved.
Drawings
FIG. 1 is a schematic diagram of a conventional oxidized VCSEL (single oxide layer);
FIG. 2 is a schematic diagram of a conventional oxidized VCSEL (multiple oxide layer);
fig. 3 is a schematic diagram (single oxide layer) of a VCSEL manufactured by an ion implantation-assisted oxide VCSEL manufacturing method according to an embodiment of the present invention;
fig. 4 is a schematic diagram (multiple oxide layers) of a VCSEL manufactured by an ion implantation-assisted oxide VCSEL manufacturing method according to an embodiment of the present invention;
fig. 5 is a schematic diagram showing the distribution of ion concentration in a VCSEL structure of a VCSEL manufactured by an ion implantation-assisted oxide VCSEL manufacturing method according to an embodiment of the present invention;
fig. 6 is a graph showing the comparison of the conventional VCSEL voltage, optical power, and photoelectric conversion efficiency with the VCSEL voltage, optical power, and photoelectric conversion efficiency of the present embodiment;
in the reference numerals: 1-N surface metal; 2-a substrate; a 3-N Bragg reflector; a 4-tunnel junction; 5-quantum wells; a 6-oxide layer; 7-P bragg mirrors; 8-silicon nitride; 9-ion implantation region; 10-P-plane metal.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 3, an embodiment of the present invention provides a method for preparing an oxide VCSEL with ion implantation assistance, including the following steps: s1, growing an epitaxial structure layer on a substrate 2, and growing P-surface metal 10 on the epitaxial structure layer; s2, after the growth of the P-surface metal 10 is finished, growing a first protection layer above the P-surface metal 10; s3, after the first protective layer grows, an oxide layer 6 is manufactured, wherein the manufacturing method is that channel etching is firstly carried out, oxidation is carried out on the basis of the channel etching, and an oxidized aperture is etched; s4, after the oxidized aperture is etched, growing a second protective layer; s5, after the second protective layer grows, performing photoetching patterns, then performing ion implantation, controlling the inner diameter of the ion implantation to be larger than the diameter of the oxidation hole, wherein the inner diameter of the ion implantation is smaller than the inner diameter of the P-surface metal 10; s6, after the ion implantation is finished, growing a third protective layer again; s7, etching the through hole after the third protective layer grows; s8, processing the P-surface metal 10 and growing the N-surface metal 1 to obtain the laser. In this embodiment, the inner diameter of the ion implantation is controlled to be larger than the diameter of the oxide hole, but smaller than the inner diameter of the P-surface metal 10, so that the high conductivity of the portion of the surface of the epitaxial layer, which is in contact with the P-metal, can be maintained to be high, and good ohmic contact between the metal and the semiconductor can be maintained. Specifically, the N-type bragg reflector, the tunnel junction 4, the quantum well 5, the oxide layer 6, the P-type bragg reflector, the N-side metal 1, the P-side metal 10, the multi-layer protection layer, and the like are all existing VCSEL manufacturing methods, and according to a great deal of research, this embodiment, it is found that when ions are implanted, the inner diameter of the ion implantation is controlled to be larger than the diameter of the oxide hole, and the inner diameter of the ion implantation is controlled to be smaller than the inner diameter of the P-side metal 10, as shown in fig. 3, the arrow below the current path at this time has better restriction on the current between the plurality of active regions. Preferably, for a structure with multiple oxide layers 6, as shown in fig. 4, the current through the last active region may also be better limited. To achieve this ion implantation effect, it is necessary to reduce the diameter of the resist to be protected before implantation and to discard the ion implantation portion having a shallower implantation depth. Wherein fig. 3 and 4 each have a plurality of quantum wells 5 and a plurality of tunnel junctions 4.
As an optimization scheme of the embodiment of the invention, in the step S5, the ion implantation species and dose include he+ ion with implantation energy of 370keV and dose of 4e+13, he+ ion with implantation energy of 560keV and dose of 3e+13, h+ ion with implantation energy of 300keV and dose of 3.5e+14, h+ ion with implantation energy of 370keV and dose of 3.5e+14, and h+ ion with implantation energy of 420keV and dose of 5e+14. In this embodiment, when controlling the inner diameter of the ion implantation, the ion implantation species and dose may be selected so that the high conductivity of the portion of the surface of the epitaxial layer in contact with the P metal maintains high conductivity, so that good ohmic contact is still maintained between the metal and the semiconductor. While making the underlying epitaxial layer non-conductive, limiting current. The distribution of the final ion concentration in the VCSEL structure is shown in fig. 5.
As an optimization scheme of the embodiment of the present invention, referring to fig. 3 and fig. 4, the first protection layer, the second protection layer, and the third protection layer are all silicon oxide, silicon nitride, or silicon oxynitride. Shown is silicon nitride 8.
As an optimization scheme of the embodiment of the invention, in the step S8, the treatment of the P-surface metal 10 comprises the steps of firstly electroplating and thickening the P-surface metal 10, and then etching a cutting channel; in the step S8, wafer thinning is carried out before the growth of the N-face metal 1, and the alloy is subjected to high temperature after the growth; and after the step S8, performing performance test and wafer cutting.
As an optimization scheme of the embodiment of the present invention, please refer to fig. 6, the slope efficiency is increased due to the better limitation of the current. The voltage is correspondingly improved due to the narrowing of the current channel, but the overall photoelectric conversion efficiency is improved by about 4-8%. Because the current is better limited, the junction area capacitance of the material is reduced, the intrinsic capacitance parameter is reduced, and the high-frequency modulation bandwidth of the chip is improved.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The preparation method of the oxidized VCSEL assisted by ion implantation is characterized by comprising the following steps of:
s1, growing an epitaxial structure layer on a substrate, and growing P-surface metal on the epitaxial structure layer;
s2, after the P-surface metal grows, growing a first protection layer above the P-surface metal;
s3, after the first protective layer grows, an oxide layer is manufactured, wherein the manufacturing mode is that channel etching is firstly carried out, oxidation is carried out on the basis of the channel etching, and an oxidized aperture is etched;
s4, after the oxidized aperture is etched, growing a second protective layer;
s5, after the second protective layer grows, performing photoetching patterns, then performing ion implantation, controlling the inner diameter of the ion implantation to be larger than the diameter of the oxidation hole, controlling the inner diameter of the ion implantation to be smaller than the inner diameter of the P-plane metal, and discarding an ion implantation part with shallower implantation depth, wherein the ion implantation type and the ion implantation dosage comprise He+ ions with implantation energy of 370keV and dosage of 4E+13, he+ ions with implantation energy of 560keV and dosage of 3E+13, H+ ions with implantation energy of 300keV and dosage of 3.5E+14, H+ ions with implantation energy of 370keV and dosage of 3.5E+14 and H+ ions with implantation energy of 420keV and dosage of 5E+14;
s6, after the ion implantation is finished, growing a third protective layer again;
s7, etching the through hole after the third protective layer grows;
and S8, treating the P-surface metal and growing the N-surface metal to obtain the laser.
2. An ion implantation-assisted oxidative VCSEL fabrication method according to claim 1, wherein: the oxide layer in the step S3 is multi-layered.
3. An ion implantation-assisted oxidative VCSEL fabrication method according to claim 1, wherein: the first protective layer, the second protective layer and the third protective layer are all silicon oxide, silicon nitride or silicon oxynitride.
4. An ion implantation-assisted oxidative VCSEL fabrication method according to claim 1, wherein: in the step S8, the treatment of the P-surface metal comprises the steps of electroplating and thickening the P-surface metal, and then etching the cutting channel.
5. An ion implantation-assisted oxidative VCSEL fabrication method according to claim 1, wherein: in the step S8, wafer thinning is carried out before N-face metal growth, and high-temperature alloy is carried out after growth.
6. An ion implantation-assisted oxidative VCSEL fabrication method according to claim 1, wherein: and after the step S8, performing performance test and wafer cutting.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412902A (en) * | 2002-12-06 | 2003-04-23 | 吉林大学 | Inclined ion injection type vertical cavity surface-emitting laser and its production method |
| CN101454954A (en) * | 2006-03-07 | 2009-06-10 | 玛丽·K·勃伦纳 | Red light laser |
| CN102403654A (en) * | 2010-09-14 | 2012-04-04 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser element and manufacturing method thereof |
| CN112117638A (en) * | 2019-06-21 | 2020-12-22 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser structure |
| CN112993752A (en) * | 2021-05-10 | 2021-06-18 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN113013728A (en) * | 2021-02-26 | 2021-06-22 | 武汉仟目激光有限公司 | Vertical cavity surface emitting laser and ion implantation method |
| CN213636609U (en) * | 2020-09-22 | 2021-07-06 | 武汉仟目激光有限公司 | High-linearity vertical cavity surface laser chip structure |
| WO2021192533A1 (en) * | 2020-03-26 | 2021-09-30 | ソニーセミコンダクタソリューションズ株式会社 | Vertical cavity surface emitting laser element, method for manufacturing vertical cavity surface emitting laser element, and photoelectric conversion device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI791116B (en) * | 2019-06-18 | 2023-02-01 | 光環科技股份有限公司 | Structure of vertical cavity surface-emitting laser |
-
2021
- 2021-11-16 CN CN202111356192.6A patent/CN114204413B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1412902A (en) * | 2002-12-06 | 2003-04-23 | 吉林大学 | Inclined ion injection type vertical cavity surface-emitting laser and its production method |
| CN101454954A (en) * | 2006-03-07 | 2009-06-10 | 玛丽·K·勃伦纳 | Red light laser |
| CN102403654A (en) * | 2010-09-14 | 2012-04-04 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser element and manufacturing method thereof |
| CN112117638A (en) * | 2019-06-21 | 2020-12-22 | 光环科技股份有限公司 | Vertical resonant cavity surface emitting laser structure |
| WO2021192533A1 (en) * | 2020-03-26 | 2021-09-30 | ソニーセミコンダクタソリューションズ株式会社 | Vertical cavity surface emitting laser element, method for manufacturing vertical cavity surface emitting laser element, and photoelectric conversion device |
| CN213636609U (en) * | 2020-09-22 | 2021-07-06 | 武汉仟目激光有限公司 | High-linearity vertical cavity surface laser chip structure |
| CN113013728A (en) * | 2021-02-26 | 2021-06-22 | 武汉仟目激光有限公司 | Vertical cavity surface emitting laser and ion implantation method |
| CN112993752A (en) * | 2021-05-10 | 2021-06-18 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
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