CN114203744A - Non-refrigeration infrared detector with suspended getter and manufacturing method thereof - Google Patents
Non-refrigeration infrared detector with suspended getter and manufacturing method thereof Download PDFInfo
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- CN114203744A CN114203744A CN202210136270.XA CN202210136270A CN114203744A CN 114203744 A CN114203744 A CN 114203744A CN 202210136270 A CN202210136270 A CN 202210136270A CN 114203744 A CN114203744 A CN 114203744A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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Abstract
The invention relates to the field of semiconductors, in particular to a non-refrigeration infrared detector with a suspended getter and a manufacturing method thereof, and the method comprises the following steps: s1, manufacturing a metal layer on the reading circuit and patterning the metal layer, and forming two metal electrodes in the non-pixel area; s2, manufacturing a sacrificial layer on the reading circuit and the metal electrode and patterning; s3, depositing getter material on the structure manufactured in the step S2; s4, removing partial getter materials except the required getter pattern to form the required getter; s5, manufacturing a pixel structure in a pixel area on the reading circuit; s6, releasing the sacrificial layer to suspend the getter; and S7, activating the getter by adopting an electric activation mode, and packaging. The invention integrates the getter into the chip end, designs the getter into a suspended structure, adopts electric activation, can effectively avoid the influence of high temperature during thermal activation on the thermosensitive material, and can also avoid the influence of heat generated during activation on the chip.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a non-refrigeration infrared detector with a suspended getter and a manufacturing method thereof.
Background
The uncooled infrared detector performs imaging by absorbing external infrared energy and converting the infrared energy into an electrical signal under an ultra-vacuum environment, so a getter is required to be used in the manufacturing process of the uncooled infrared detector and is activated before the detector is vacuum-sealed, so that residual gas is removed to maintain higher vacuum degree. Meanwhile, if the vacuum degree is reduced in the later use process of the detector, the getter can be activated for the second time to absorb residual gas, so that the detector can maintain a high-vacuum environment again.
The packaging mode of the existing non-refrigeration infrared detector mainly comprises metal, ceramic, wafer level and area array level packaging, wherein the metal and ceramic packaging uses a columnar getter, the getter is welded on a tube shell lead wire by a welding mode, and the getter is electrically or thermally activated before packaging to maintain high vacuum degree. The wafer level packaging uses a thin film getter, the getter is integrated on a cap wafer, and finally the getter is activated by using the bonding high temperature in the bonding process and adopting a thermal activation mode, so that the influence of the temperature of a chip on the getter in the MEMS process preparation process can be avoided. The area array level packaging is to integrate a cap wafer and an MEMS wafer on the basis of wafer level packaging, a material is adopted to directly seal the whole MEMS structure, thermal activation is to heat up the whole chip, however, the heat-sensitive material of the uncooled infrared detector chip is not high-temperature resistant, and when the temperature reaches a certain value, metal can lose activity, so that the temperature during the thermal activation of the getter is limited not to be too high, but the thermal activation of the getter needs to be performed in a high-temperature environment, the low temperature can cause insufficient activation of the getter, and the maintenance of the vacuum degree is not facilitated. Therefore, it is necessary to redesign the structure and preparation of the getter so that the temperature of the getter when activated can neither deactivate the heat sensitive material, nor integrate the getter on the chip wafer.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a non-refrigeration infrared detector with a suspended getter and a manufacturing method thereof, which can avoid the influence of high temperature during thermal activation on heat-sensitive materials in a chip and reduce the influence of heat generated by electrical activation on the chip.
In order to achieve the purpose, the technical scheme of the invention is that the non-refrigeration infrared detector with the suspended getter comprises a reading circuit, a pixel structure positioned in a pixel area of the reading circuit and a getter structure positioned in a non-pixel area of the reading circuit, wherein the getter structure comprises two metal electrodes positioned on the reading circuit and a getter suspended on the reading circuit, and two ends of the getter are respectively connected with the two metal electrodes.
Further, a support layer is disposed inside the getter.
Further, the top surface of the getter is in a plurality of parallel connection type, S type or square type.
Further, the material of the getter adopts one or more of zirconium, titanium, cobalt, thorium and tantalum.
The invention also provides a manufacturing method of the non-refrigeration infrared detector with the suspended getter, which comprises the following steps:
s1, manufacturing a metal layer on the reading circuit and patterning the metal layer, and forming two metal electrodes in the non-pixel area;
s2, manufacturing a sacrificial layer on the reading circuit and the metal electrode and patterning;
s3, depositing getter material on the structure manufactured in the step S2;
s4, removing partial getter materials except the required getter pattern to form the required getter;
s5, manufacturing a pixel structure in a pixel area on the reading circuit;
s6, releasing the sacrificial layer to suspend the getter;
and S7, activating the getter by adopting an electric activation mode, and packaging.
Further, after patterning the sacrificial layer in step S2, a support layer is deposited on the sacrificial layer and the metal electrode and patterned to form a desired support layer.
Further, the sacrificial layers of the picture element region and the non-picture element region are released together in step S6.
Further, in step S5, the pixel structure is manufactured by using a MEMS process.
Further, before the getter material is deposited, the getter material is removed by photoresist lithography and development in step S3, and the getter material is removed by Lift off in step S4.
Further, the packaging manner in step S7 is metal packaging, ceramic packaging, wafer level packaging or area array level packaging.
Compared with the prior art, the invention has the following beneficial effects:
(1) the getter is designed in a suspension manner and activated in an electric activation mode, so that the influence of high temperature generated in thermal activation on a thermosensitive material in a chip is avoided, meanwhile, the influence of heat generated by electric activation on the chip can be reduced, and the sensitivity of the uncooled infrared detector is improved, so that the performance of the uncooled infrared detector is integrally improved, and the method can be applied to metal, ceramic, wafer level and area array level packaging;
(2) compared with metal packaging and ceramic packaging, the invention integrates the columnar getter externally arranged on the tube shell on the chip by utilizing the MEMS process, thereby simplifying the packaging process, saving the getter material on the tube shell, and reducing the material cost, the welding cost and the labor cost;
(3) the invention integrates the getter into the chip end, which can enlarge the absorption area, improve the gas absorption capacity, keep the chip in higher vacuum degree and improve the product performance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a readout circuit according to an embodiment of the present invention;
fig. 2 is a structure of a product obtained in step S1 in the method for manufacturing a getter-suspended uncooled infrared detector according to an embodiment of the present invention;
fig. 3 is a structure of a product obtained in step S2 in the method for manufacturing a getter-suspended uncooled ir detector according to an embodiment of the present invention;
fig. 4 is a structure of a product obtained in step S4 in the method for manufacturing a getter-suspended uncooled ir detector according to an embodiment of the present invention;
fig. 5 is a structure of the product obtained in step S6 in the method for manufacturing a getter-suspended non-refrigeration infrared detector according to the embodiment of the present invention;
fig. 6 is a schematic diagram of a plurality of parallel getter strips left in step S4 in the method for manufacturing a non-refrigeration infrared detector with suspended getters according to an embodiment of the present invention;
fig. 7 is a schematic diagram of the getter remaining in step S4 in the method for manufacturing a getter-suspended uncooled ir detector according to an embodiment of the present invention in an S-shape;
fig. 8 is a schematic view illustrating the getter left in step S4 in the method for manufacturing a getter-suspended uncooled ir detector according to an embodiment of the present invention in a square shape;
in the figure: 1. a readout circuit; 2. a metal electrode; 3. a sacrificial layer; 4. a support layer; 5. a getter; 6. and testing the pad.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
Referring to fig. 5, the present embodiment provides a getter-suspended uncooled infrared detector, including a readout circuit 1, a pixel structure located in a pixel area of the readout circuit 1, and a getter structure located in a non-pixel area of the readout circuit 1, where the getter structure includes two metal electrodes 2 located on the readout circuit 1, and a getter 5 suspended on the readout circuit 1, and two ends of the getter 5 are respectively connected to the two metal electrodes 2. In the embodiment, the getter externally arranged at the end of the tube shell is integrated at the end of the chip, so that the packaging process can be simplified, the absorption area can be enlarged, and the gas absorption capacity can be improved; and the getter is designed into a suspension structure, so that the influence of heat generated during activation on the chip is avoided.
In an embodiment, the getter 5 is provided with a support layer 4 on the inner side. In the embodiment, the support layer 4 is arranged on the inner side of the getter 5 and plays a supporting role for the getter 5; the support layer 4 may be made of a silicon nitride material.
In the preferred embodiment, the top surface of the getter 5 is in a plurality of parallel connection type, S type or square type. The getter 5 of the embodiment can be designed into various different structural forms, and the shape of the supporting layer 4 is consistent with that of the getter 5; referring to fig. 6, the top surfaces of the getters 5 are three parallel-connected, and the parallel-connected positions of the two ends of the getters 5 are respectively connected and conducted with the two metal electrodes 2; referring to fig. 7, the top surface of the getter 5 is S-shaped, and two ends of the getter 5 are respectively connected and conducted with the two metal electrodes 2; referring to fig. 8, the top surface of the getter 5 is square, and two ends of the getter 5 are respectively connected and conducted with the two metal electrodes 2; and test pads 6 are respectively connected to both ends of the getter 5 in each form.
In the detailed embodiment, the getter is made of one or more of zirconium, titanium, cobalt, thorium and tantalum, and other existing getter materials can be adopted.
Example two
Referring to fig. 1 to 5, the present embodiment provides a method for manufacturing a getter-suspended uncooled infrared detector, including the following steps:
s1, manufacturing a metal layer on the reading circuit 1 and patterning the metal layer, forming two metal electrodes 2 in the non-pixel area, and connecting and conducting the two metal electrodes 2 with the reading circuit 1, as shown in FIG. 2;
s2, fabricating and patterning a sacrificial layer 3 on the readout circuit and the metal electrode 2 of 1, where two sides of the bottom of the patterned sacrificial layer 3 are respectively located on the two metal electrodes 2, as shown in fig. 3;
s3, depositing getter material on the completed structure in step S2, as shown in fig. 4;
s4, removing the getter materials outside the non-image area pattern and in the image area, leaving the getter materials on the top surface and two sides of the sacrificial layer 3 in the non-image area to form a required getter 5, wherein two ends of the getter 5 are respectively connected with the two metal electrodes 2;
s5, manufacturing a pixel structure in a pixel area on the reading circuit 1;
s6, releasing the sacrificial layer 3 to suspend the getter 5, as shown in fig. 5;
and S7, activating the getter 5 in an electric activation mode, enabling the getter 5 to absorb residual gas to maintain the vacuum degree, and packaging.
In the embodiment, the getter 5 is designed in a suspended manner and is activated in an electric activation mode, so that the influence of high temperature generated in thermal activation on a thermosensitive material in a chip is avoided, meanwhile, the influence of heat generated by electric activation on the chip can be reduced, the sensitivity of the non-refrigeration infrared detector is improved, and the performance of the non-refrigeration infrared detector is improved as a whole; in addition, in the embodiment, the getter 5 externally arranged at the end of the tube shell is integrated to the end of the chip through a semiconductor process, so that the packaging process can be simplified, the getter material on the tube shell is omitted, the material cost, the welding cost and the labor cost are reduced, the absorption area can be enlarged, the air suction capacity is improved, the chip can keep higher vacuum degree, and the product performance is improved.
The above embodiment is optimized, and in step S5, the pixel structure of the uncooled infrared detector is manufactured by using the MEMS process. Preferably, the sacrificial layer 3 of the picture element region and the non-picture element region are released together in step S6. Since the sacrificial layer is required to be manufactured in the process of manufacturing the pixel structure by the MEMS process, the sacrificial layer 3 in the pixel region and the non-pixel region can be released together in step S6, and the process steps are saved.
In the preferred embodiment, the top surfaces of the getters 5 left in step S4 are in the shape of a plurality of parallel, S, or square bars. The getter 5 of the present embodiment can be designed into a plurality of different structural forms, as shown in fig. 6 to 8, the top surface of the getter 5 is respectively in a plurality of parallel, S-shaped or square shapes, two ends of the getter 5 are respectively connected and conducted with the two metal electrodes 2, and two ends of the getter 5 in each form are further respectively connected with the test pads 6.
In step S2, after the sacrificial layer 3 is patterned, depositing and patterning a support layer 4 on the sacrificial layer 3 and the metal electrode 2 to form a desired support layer 4, wherein the patterned support layer 4 corresponds to the getter 5 to be retained, as shown in fig. 4; wherein, the support layer 4 can adopt a silicon nitride material and has a supporting function on the getter 5.
To optimize the above embodiment, the getter material is removed in step S4 by Lift off process, before the getter material is deposited, by photoresist development leaving the position where the getter 5 needs to be kept in step S3. In the embodiment, the positions where the getter materials need to be reserved are reserved by the photoresist photoetching development technology, so that the getters 5 except for the required getter patterns can be removed by a Lift off process at a later stage. The photoresist at the unnecessary positions is also removed in step S4.
In the above embodiment, in step S3, the getter 5 may be one or more of zirconium, titanium, cobalt, thorium and tantalum, or other existing getter materials; the deposition mode can adopt a physical vapor deposition technology.
Further, the packaging manner in step S7 is metal packaging, ceramic packaging, wafer level packaging or area array level packaging. In the embodiment, the two ends of the suspended getter 5 are electrified before packaging, and the getter is activated in an electric activation mode to absorb residual gas so as to keep the vacuum degree, and then the detector is packaged; the manufacturing method of the embodiment can be commonly used in different types of packages such as metal, ceramic, wafer level and area array level packages.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. An uncooled infrared detector with a suspended getter is characterized in that: the getter structure comprises two metal electrodes positioned on the reading circuit and a getter arranged on the reading circuit in a hanging mode, and two ends of the getter are connected with the two metal electrodes respectively.
2. A getter-suspended uncooled ir detector as in claim 1, wherein: the support layer is arranged on the inner side of the getter.
3. A getter-suspended uncooled ir detector as in claim 1, wherein: the top surface of the getter is in a plurality of parallel connection types, S types or square types.
4. A getter-suspended uncooled ir detector as in claim 1, wherein: the getter is made of one or more of zirconium, titanium, cobalt, thorium and tantalum.
5. Method for manufacturing a getter-suspended non-refrigerated infrared detector according to any of claims 1 to 4, characterized in that it comprises the following steps:
s1, manufacturing a metal layer on the reading circuit and patterning the metal layer, and forming two metal electrodes in the non-pixel area;
s2, manufacturing a sacrificial layer on the reading circuit and the metal electrode and patterning;
s3, depositing getter material on the structure manufactured in the step S2;
s4, removing partial getter materials except the required getter pattern to form the required getter;
s5, manufacturing a pixel structure in a pixel area on the reading circuit;
s6, releasing the sacrificial layer to suspend the getter;
and S7, activating the getter by adopting an electric activation mode, and packaging.
6. The method of claim 5, wherein the getter-suspended non-refrigerated infrared detector comprises: after the sacrificial layer is patterned in step S2, a support layer material is deposited and patterned on the sacrificial layer and the metal electrode to form a desired support layer.
7. The method of claim 5, wherein the getter-suspended non-refrigerated infrared detector comprises: the sacrificial layers of the picture element region and the non-picture element region are released together in step S6.
8. The method of claim 5, wherein the getter-suspended non-refrigerated infrared detector comprises: in step S5, the pixel structure is manufactured by using an MEMS process.
9. The method of claim 1, wherein the getter-suspended non-refrigerated infrared detector comprises: before the getter material is deposited in the step S3, the positions where the getter needs to be reserved are left through photoresist photoetching development, and the getter material is removed by a Lift off process in the step S4.
10. The method of claim 1, wherein the getter-suspended non-refrigerated infrared detector comprises: the packaging method in step S7 is metal packaging, ceramic packaging, wafer level packaging or area array level packaging.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114933276A (en) * | 2022-07-20 | 2022-08-23 | 武汉高芯科技有限公司 | Getter pixel, preparation method thereof and infrared focal plane detector |
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| US20120228733A1 (en) * | 2011-03-11 | 2012-09-13 | Institut National D'optique | Mems-based getter microdevice |
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
| CN106441595A (en) * | 2016-09-28 | 2017-02-22 | 杭州大立微电子有限公司 | Infrared detector array level packaging structure and manufacturing method thereof |
| CN106800271A (en) * | 2017-01-24 | 2017-06-06 | 烟台睿创微纳技术股份有限公司 | A kind of new non-refrigerated infrared focal plane probe dot structure and preparation method thereof |
| CN108313973A (en) * | 2017-12-27 | 2018-07-24 | 武汉高德红外股份有限公司 | A kind of the pixel class encapsulation structure and processing method of non-refrigerated infrared detector |
| CN110132424A (en) * | 2019-05-09 | 2019-08-16 | 青岛大学 | A kind of infrared detecting chip and preparation method thereof |
| CN110902643A (en) * | 2019-11-25 | 2020-03-24 | 烟台睿创微纳技术股份有限公司 | MEMS sensor and preparation method thereof |
| CN111092126A (en) * | 2019-12-12 | 2020-05-01 | 浙江大立科技股份有限公司 | Infrared detector and forming method thereof, infrared detector packaging structure and method thereof |
| CN112499580A (en) * | 2020-11-05 | 2021-03-16 | 武汉鲲鹏微纳光电有限公司 | Uncooled infrared detector, chip and manufacturing method of chip |
| CN113948542A (en) * | 2021-10-19 | 2022-01-18 | 烟台睿创微纳技术股份有限公司 | Pixel-level packaging structure of uncooled infrared detector and manufacturing method thereof |
| CN113690262A (en) * | 2021-10-25 | 2021-11-23 | 武汉高芯科技有限公司 | Infrared focal plane chip, preparation method thereof and infrared focal plane detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114933276A (en) * | 2022-07-20 | 2022-08-23 | 武汉高芯科技有限公司 | Getter pixel, preparation method thereof and infrared focal plane detector |
| CN114933276B (en) * | 2022-07-20 | 2022-11-04 | 武汉高芯科技有限公司 | Getter pixel, preparation method thereof and infrared focal plane detector |
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