CN114195958B - Interface barrier material, preparation method thereof and multilayer perovskite solar cell - Google Patents
Interface barrier material, preparation method thereof and multilayer perovskite solar cell Download PDFInfo
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- CN114195958B CN114195958B CN202111502338.3A CN202111502338A CN114195958B CN 114195958 B CN114195958 B CN 114195958B CN 202111502338 A CN202111502338 A CN 202111502338A CN 114195958 B CN114195958 B CN 114195958B
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Abstract
The invention provides an interface barrier material, a preparation method thereof and a multilayer perovskite solar cell, wherein the preparation method of the interface barrier material comprises the following steps: dissolving the monomer A, the monomer B and an initiator in a solvent, and carrying out polymerization reaction at 95-105 ℃. The interface barrier material is a reticular polymer, and is introduced into the multilayer perovskite thin film, so that the ion migration between perovskite layers can be inhibited; according to the multilayer perovskite solar cell, the interface barrier layer is arranged between any two adjacent perovskite layers, the arranged interface barrier layer can inhibit ion migration between the perovskite layers, and the multilayer perovskite can combine the advantages of different types of perovskite with different components, such as near infrared absorption of narrow-band-gap perovskite, wet stability and thermal stability of wide-band-gap two-dimensional perovskite and the like, so that the preparation of an efficient stable device is realized.
Description
The invention relates to the technical field of solar photoelectric devices, in particular to an interface barrier material, a preparation method thereof and a multilayer perovskite solar cell.
Background
In recent years, perovskite solar cells have been attracting attention as third-generation semiconductor devices, and the research is also in the world. The maximum efficiency of the prior unijunction perovskite solar cell reaches 25.5%, but due to the existence of thermal loss and non-radiative recombination loss, the development of the photoelectric conversion efficiency slowly enters a bottleneck period, and the theoretical Schottky threshold efficiency cannot be broken through. And the three-dimensional perovskite maintaining the highest efficiency is easy to degrade in the environments of continuous illumination, high humidity, high temperature and the like, so that the efficiency of the device is rapidly reduced. These factors have prevented commercialization of perovskite solar cells. Further improvements in the efficiency and stability of the devices are the current trend in the development of perovskite solar cells. Different types of perovskites of different compositions have different properties, such as narrow band gap perovskites being capable of absorbing light in the near infrared range, and wide band gap perovskites being more prone to absorb light at shorter wavelengths; the three-dimensional perovskite has fast carrier transmission and high device efficiency, and the two-dimensional perovskite has good wet stability and thermal stability. The organic combination of these perovskites in one device to prepare a multilayer perovskite solar cell can combine the advantages of the perovskites to obtain a more efficient and stable device. However, the perovskite layer is liable to undergo ion migration and cannot maintain a fixed composition for a long period of time.
Based on the defects of the current perovskite solar cells, improvement on the defects is needed.
Disclosure of Invention
In view of the above, the invention provides an interface barrier material, a preparation method thereof and a multilayer perovskite solar cell, so as to solve the technical problems in the prior art.
In a first aspect, the present invention provides a method for preparing an interface barrier material, comprising the following steps: dissolving the monomer A, the monomer B and an initiator in a solvent, and carrying out polymerization reaction at 95-105 ℃ to obtain an interface barrier material;
wherein the structural formula of the monomer A comprises one of the following:
said R is 1 、R 2 、R 3 、R 4 At least one of them contains olefin, and the described R is olefin derivative;
the chemical formula of the monomer B is
Said R is 5 Is a multi-branched alkene.
Preferably, the initiator comprises at least one of an organic peroxide initiator, an inorganic peroxide initiator, an azo initiator and a redox initiator, and the solvent comprises at least one of ethyl acetate, chlorobenzene and isopropanol;
the structural formula of the monomer A is
The structural formula of the monomer B is
In a second aspect, the invention also provides an interface barrier material prepared by the preparation method.
In a third aspect, the present invention also provides a multilayer perovskite solar cell comprising:
a substrate;
the first transmission layer is positioned on the upper end face of the substrate;
the perovskite layers are positioned above the first transmission layer, the perovskite layer at the lowest part is positioned on the upper end face of the first transmission layer, an interface barrier layer is arranged between any two adjacent perovskite layers, and the upper end face and the lower end face of the interface barrier layer are respectively attached to the end faces of the perovskite layers;
the second transmission layer is positioned on the upper end face of the uppermost perovskite layer;
the counter electrode layer is positioned on the upper end face of the second transmission layer;
the preparation method of the interface barrier layer comprises the following steps: and dissolving the monomer A, the monomer B and an initiator in a solvent to obtain a precursor solution, spin-coating the precursor solution on a perovskite layer, and carrying out polymerization reaction at 95-105 ℃ to obtain the interface barrier layer.
Preferably, in the multilayer perovskite solar cell, the perovskite layer includes any one of a three-dimensional perovskite, a two-dimensional perovskite, and a one-dimensional perovskite.
Preferably, in the multilayer perovskite solar cell, when the first transport layer is an electron transport layer, the second transport layer is a hole transport layer;
when the first transport layer is a hole transport layer, the second transport layer is an electron transport layer.
Preferably, in the multilayer perovskite solar cell, the electron transport layer material comprises tin oxide, [6,6 ] or]-phenyl-C 61 -any one of isopropyl butyrate, titanium oxide, zinc oxide, zirconium oxide, graphene and derivatives thereof.
Preferably, in the multilayer perovskite solar cell, the hole transport layer material comprises poly bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, poly 3, 4-ethylenedioxythiophene: polystyrene sulfonate, poly-3-hexylthiophene, nickel oxide, molybdenum oxide.
Preferably, in the multilayer perovskite solar cell, the material of the counter electrode layer includes at least one of Al, ag, au, mo, and C.
Preferably, the multilayer perovskite solar cell, the base is transparent conductive substrate, transparent conductive substrate includes ITO or FTO.
Compared with the prior art, the interface barrier material and the preparation method thereof and the multilayer perovskite solar cell have the following beneficial effects:
(1) According to the preparation method of the interface barrier material, the monomer A and the monomer B are subjected to olefin thermal condensation polymerization reaction under the action of the initiator, the generated interface barrier material is a net-shaped polymer, and the interface barrier material is introduced into the multilayer perovskite thin film, so that ion migration between layers of the perovskite thin film can be inhibited, and the preparation of a high-efficiency stable device can be realized;
(2) The multilayer perovskite solar cell comprises a plurality of perovskite layers, an interface barrier layer is arranged between any two adjacent perovskite layers, the arranged interface barrier layer can inhibit ion migration between the perovskite layers, and the multilayer perovskite can combine the advantages of different types of perovskite with different components, such as near infrared absorption of narrow-band-gap perovskite, wet stability and thermal stability of wide-band-gap two-dimensional perovskite and the like, so that the preparation of a high-efficiency stable device is realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic structural view of a multilayer perovskite solar cell of the present invention;
FIG. 2 is a Scanning Electron Microscope (SEM) image of the present invention in which lead iodide is evaporated to different thicknesses on a three-dimensional perovskite/interfacial barrier layer;
FIG. 3 is an SEM surface topography of a three-dimensional perovskite/interfacial barrier layer/40 nm two-dimensional perovskite in example 1 of the present invention;
FIG. 4 (a) is an SEM cross-sectional view of FTO/tin oxide/three-dimensional perovskite/2, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9 '-spirobifluorene in comparative example 1 of the present invention, (b) is an SEM cross-sectional view of FTO/tin oxide/three-dimensional perovskite/interfacial barrier layer/40 nm two-dimensional perovskite/2, 2',7 '-tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene in example 1 of the present invention;
FIG. 5 is an X-ray diffraction (XRD) pattern of a three-dimensional perovskite/interfacial barrier layer/two-dimensional perovskite thin film of different thickness according to the present invention;
FIG. 6 is a graph of the Photoelectric Conversion Efficiency (PCE) of the multilayer perovskite solar cell prepared in example 1 of the present invention and the perovskite solar cell prepared in comparative example 1;
fig. 7 shows a graph of the efficiency of the multilayer perovskite solar cell prepared in example 1 of the present invention and the perovskite solar cell prepared in comparative example 1 under different aging times.
Detailed Description
In the following, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The embodiment of the application provides a preparation method of an interface barrier material, which comprises the following steps: dissolving the monomer A, the monomer B and an initiator in a solvent, and carrying out polymerization reaction at the temperature of 95-105 ℃ to obtain an interface barrier material;
wherein the structural formula of the monomer A comprises one of the following:
R 1 、R 2 、R 3 、R 4 at least one of them contains olefin, R is olefin derivative;
the chemical formula of the monomer B is
R 5 Is a multi-branched alkene.
In some embodiments, the initiator comprises at least one of an organic peroxide initiator, an inorganic peroxide initiator, an azo-based initiator, a redox initiator, and the solvent comprises at least one of Ethyl Acetate (EA), chlorobenzene (CB), isopropyl alcohol (IPA);
the structural formula of the monomer A is
The chemical formula of the monomer B is
Specifically, the organic peroxide initiator includes: acyl peroxides (benzoyl peroxide, lauroyl peroxide), hydroperoxides (cumene hydroperoxide, t-butyl hydroperoxide), dialkyl peroxides (di-t-butyl peroxide, dicumyl peroxide), ester peroxides (t-butyl peroxybenzoate, t-butyl peroxypivalate), ketone peroxides (methyl ethyl ketone peroxide, cyclohexanone peroxide), dicarbonate peroxides (diisopropyl peroxydicarbonate, dicyclohexyl peroxydicarbonate); the inorganic peroxide initiator is mainly persulfate, such as potassium persulfate, sodium persulfate, ammonium persulfate and the like; azo initiators include azobisisobutyronitrile, azobisisoheptonitrile, and the like; redox initiators include benzoyl peroxide/sucrose, t-butyl hydroperoxide/rongalite, t-butyl hydroperoxide/sodium metabisulfite, benzoyl peroxide/N, N-dimethylaniline. Ammonium persulfate/sodium bisulfite, potassium persulfate/sodium bisulfite, and the like.
Specifically, the interface barrier material is prepared by the following reaction.
In the above embodiment, the monomer a and the monomer B are subjected to olefin thermal condensation polymerization reaction under the action of the initiator, and the generated interface barrier material is a network polymer; the interface barrier material is introduced into a multilayer perovskite thin film, so that ion migration between perovskite layers can be inhibited, and the preparation of an efficient and stable device can be realized.
Based on the same inventive concept, the embodiment of the present application further provides a multilayer perovskite solar cell, including:
a substrate 1;
the first transmission layer 2 is positioned on the upper end face of the substrate 1;
the perovskite layer 3 is positioned above the first transmission layer 2, the lowermost perovskite layer 3 is positioned on the upper end face of the first transmission layer 2, an interface barrier layer 4 is arranged between any two adjacent perovskite layers 3, and the upper end face and the lower end face of each interface barrier layer 4 are respectively attached to the end faces of the perovskite layers 3;
a second transmission layer 5 positioned on the upper end surface of the uppermost perovskite layer 3;
the counter electrode layer 6 is positioned on the upper end face of the second transmission layer 5;
the preparation method of the interface barrier layer 4 comprises the following steps: and dissolving the monomer A, the monomer B and an initiator in a solvent to obtain a precursor solution, spin-coating the precursor solution on the perovskite layer, and annealing at 95-105 ℃ to perform a polymerization reaction to obtain the interface barrier layer.
Specifically, the multilayer perovskite solar cell comprises a substrate 1, a first transmission layer 2, a plurality of perovskite layers 3, a plurality of interface barrier layers 4, a second transmission layer 5 and a counter electrode layer 6, wherein the number of the perovskite layers 3 can be 2, 3,4, 5 or 6 \8230, the number of \8230n, the number of the perovskite layers 3 is determined according to actual use conditions; meanwhile, an interface barrier layer 4 is arranged between any two adjacent perovskite layers 3, the perovskite layer 3 at the lowest part is positioned on the upper end face of the first transmission layer 2, the second transmission layer 5 is positioned on the upper end face of the perovskite layer 3 at the uppermost part, the interface barrier layer 4 is arranged between the perovskite layers 3, so that ion migration between the perovskite layers can be achieved, and the multilayer perovskite can combine the advantages of different types of perovskite with different components, such as the near infrared absorption of narrow-band-gap perovskite, the wet stability and the thermal stability of wide-band-gap two-dimensional perovskite, and the preparation of a high-efficiency stable device is realized.
In some embodiments, the perovskite layer 3 includes any one of a three-dimensional perovskite, a two-dimensional perovskite, and a one-dimensional perovskite.
Specifically, the three-dimensional perovskite can be all-inorganic perovskite, organic-inorganic hybrid perovskite, binary blended perovskite, ternary blended perovskite and the like; the two-dimensional perovskite can be of RP type, DJ type and ACI type; the perovskite is selected differently for each layer according to the emphasis on the function of the solar device.
In some embodiments, when the first transport layer 2 is an electron transport layer, the second transport layer 5 is a hole transport layer;
when the first transport layer 2 is a hole transport layer, the second transport layer 5 is an electron transport layer.
Specifically, in some embodiments, the electron transport layer material comprises tin oxide (SnO) x )、[6,6]-phenyl-C 61 -butyric acid isopropyl ester (PCBM), titanium oxide (TiO) x ) Zinc oxide (ZnO), zirconium oxide (ZrO) 2 ) Graphene and derivatives thereof.
In some embodiments, the hole transport layer material comprises poly bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine (PTAA), 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino]-9,9' -spirobifluorene (spiro-OMeTAD), poly-3, 4-ethylenedioxythiophene polystyrene sulfonate (PEDOT: PSS), poly-3-hexylthiophene (P3 HT), nickel oxide NiO x Molybdenum oxide (MoO) x )。
In some embodiments, the material of the counter electrode layer comprises at least one of Al, ag, au, mo, C.
In some embodiments, the substrate 1 is a transparent conductive substrate comprising ITO conductive glass or FTO conductive glass.
In some embodiments, the perovskite layer is prepared by a method including, but not limited to, solution methods, vacuum evaporation, electron beam evaporation, magnetron sputtering, atomic layer deposition, photolithography, chemical vapor deposition, screen printing, electrochemical deposition, spin coating, knife coating, and ink jet printing. The electron transport layer and the hole transport layer can be prepared by a solution method or a vacuum evaporation method, and the counter electrode layer can be prepared by an evaporation method.
The following further describes the method for producing the multilayer perovskite solar cell of the present application with specific examples.
Example 1
The embodiment provides a preparation method of a multilayer perovskite solar cell, which comprises the following steps:
s1, providing an FTO conductive glass substrate;
s2, mixing 5g of urea, 100 mu L of thioglycolic acid and 5mL hydrochloric acid (37 wt%) is sequentially dissolved in 400mL deionized water to form a solution; snCl 2 ·2H 2 O powder was added to the solution to obtain SnCl at a concentration of 12mM 2 ·2H 2 O suspension;
s3, 12mM SnCl 2 ·2H 2 Adding ultrapure water into the O suspension for dilution to 2mM, and then soaking the FTO conductive glass substrate in the diluted SnCl 2 ·2H 2 Standing in an oven at 70 ℃ for 4h in O suspension, washing the FTO conductive glass substrate with deionized water, and then using N 2 Blow-drying, and finally annealing at 180 ℃ for 1h to obtain SnO 2 A thin film, namely a first transmission layer (namely an electron transmission layer);
s4, 21.84mg of methylamine bromate (MABr) and 77.07mg of lead bromide (PbBr) were weighed respectively 2 ) 190.06mg formamidine iodate (FAI) and 548.6mg lead iodide (PbI) 2 ) Dissolving in 640 μ L mixed solution of N, N-Dimethylformamide (DMF) and 160 μ L dimethyl sulfoxide (DMSO), adding 30 μ L DMSO solution of cesium iodide (CsI) with concentration of 2mM, and shaking thoroughly to obtain three-dimensional perovskite (MA) 0.15 FA 0.8 Cs 0.05 )PbBr 0.45 I 2.55 30 mu L of perovskite precursor solution is dripped into SnO 2 Spin-coating on the film at the rotation speed of 5000rpm for 30s, dripping 130 μ L of antisolvent (CB or EA) at the last 5s to extract redundant solvent, and annealing at 100 ℃ for 45min to obtain a perovskite layer (marked as a first perovskite layer);
s5, dissolving a monomer A and a monomer B in a mixed solution of EA and CB (the volume ratio of EA to CB is 1; dripping 30 mu L of solution on the perovskite layer, spin-coating for 30s at the rotating speed of 5000rpm, and annealing at 100 ℃ for 10min to obtain an interface barrier layer;
wherein the structural formula of the monomer A is
The structural formula of the monomer B is
S6, evaporating on the interface barrier layer by using an evaporation method to obtain PbI with the thickness of 20nm 2 A film;
s7, preparing IPA solution containing 30mM phenylethylamine iodate (PEAI), and dripping 30 mu L of solution into PbI 2 Spin-coating the film for 30s at the rotation speed of 4000rpm, and annealing at 100 ℃ for 5min to obtain two-dimensional perovskite (marked as a second perovskite layer);
s8, dissolving 72.3mg of spiro-OMeTAD in 1mLCB, adding 17.5 muL of acetonitrile solution with 520mg/mL of lithium bis (trifluoromethanesulfonimide) (Li-TFSI) and 28.8 muL of tetra-tert-butylpyridine (TBP) to obtain a mixed solution, dropwise adding 30 muL of the mixed solution on the two-dimensional perovskite film in the step S7, and spin-coating at the rotating speed of 3000rpm for 30S to obtain a second transmission layer (namely a hole transmission layer);
and S9, evaporating metal Ag with the thickness of about 100nm on the second transmission layer in the step S8 by adopting an evaporation method to serve as a counter electrode layer, and thus preparing the multilayer perovskite solar cell.
Example 2
The embodiment provides a preparation method of a multilayer perovskite solar cell, which comprises the following steps:
s1, providing an ITO conductive glass substrate;
s2, dissolving 4mg of PTAA in 1mL of CB, shaking for 1h to obtain a solution, dropwise adding 30 mu L of the solution on an ITO conductive glass substrate, spin-coating for 30S at the rotating speed of 6000rpm, and annealing at 100 ℃ for 10min to obtain a first transmission layer (namely a hole transmission layer);
s3, preparing (MA) 0.15 FA 0.8 Cs 0.05 )PbBr 0.45 I 2.55 Taking 30 mu L of perovskite precursor solution, dropwise adding the perovskite precursor solution on the first transmission layer, spin-coating for 30s at the rotating speed of 5000rpm, dropwise adding 130 mu L of anti-solvent (CB or EA) for extracting redundant solvent at the last 5s, and then annealing for 45min at 100 ℃ to prepare a perovskite layer (marked as a first perovskite layer);
s4, dissolving the monomer A and the monomer B in a mixed solution of EA and CB (the volume ratio of EA to CB is 1; dripping 30 mu L of solution on the perovskite layer, spin-coating for 30s at the rotating speed of 5000rpm, and annealing at 100 ℃ for 10min to obtain an interface barrier layer;
wherein the structural formula of the monomer A is
The structural formula of the monomer B is
S5, evaporating the interface barrier layer by using an evaporation method to obtain SnI with the thickness of 20nm 2 A film;
s6, formamidine iodate (FAI) is dissolved in a mixed solution of hexafluoro-2-propanol, IPA and CB in a volume ratio of 5 2 Spin-coating on the film at 5000rpm for 30s, and annealing at 80 deg.C for 10min to obtain SnFAI 3 Perovskite (denoted as second perovskite layer);
s7, preparing [6,6 ] with the concentration of 20mg/mL]-phenyl-C 61 -isobutyl butyrate (PCBM) solution, preparing 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline (BCP) solution with concentration of 0.5mg/mL, and dripping 30 μ L of PCBM solution into SnFAI 3 Spin-coating the perovskite thin film at the rotating speed of 3000rpm for 60s to obtain a PCBM layer, namely a second transmission layer (namely an electron transmission layer); standing for one hour in a nitrogen glove box, and spin-coating a BCP solution on the PCBM layer for 30s at the rotating speed of 5000rpm to form a BCP layer;
and S8, evaporating and plating metal Ag with the thickness of about 100nm on the BCP layer in the step S7 by adopting an evaporation method to serve as a counter electrode layer, and thus the multilayer perovskite solar cell can be prepared.
Comparative example 1
The method for manufacturing a perovskite solar cell provided in this comparative example is the same as in example 1, except that the manufacturing method does not include steps S5 to S7, a second transport layer is directly formed on the perovskite layer formed in step S4 in the same manner, and then a counter electrode layer is formed on the second transport layer, and the remaining processes are the same as in example 1.
Performance testing
After preparing an interface barrier layer on the surface of the perovskite layer in example 1, lead iodide was deposited to a thickness of 0nm, 1nm, 3nm, 5nm, 10nm, 15nm, 20nm, 30nm by the method in example 1, and then a two-dimensional perovskite was formed by the PEAI treatment in example 1. It can be understood that evaporation of lead iodide with a thickness of 0nm neither evaporation of lead iodide nor subsequent PEAI treatment is performed, i.e., the interface barrier layer itself. Fig. 2 is a Scanning Electron Microscope (SEM) image of the surface of the interface barrier layer after evaporation of lead iodide of different thicknesses. As can be seen from fig. 2, the three-dimensional perovskite/interfacial barrier layer surface is gradually covered with increasing thickness of lead iodide. When the thickness of lead iodide is greater than 10nm, a dense thin film is formed.
Fig. 3 is an SEM image of example 1 after evaporation of 20nm lead iodide and subsequent PEAI treatment, and it can be seen from fig. 3 that the surface changes from dense large particles to coarse small particles, indicating the formation of a two-dimensional perovskite. It should be noted that, in the present application, two-dimensional perovskite with a thickness of two times of lead iodide can be obtained by evaporation of lead iodide and then by PEAI treatment, for example, two-dimensional perovskite with a thickness of 2nm can be obtained by evaporation of lead iodide and then by PEAI treatment.
FIG. 4 (a) is a SEM cross-sectional view of FTO/tin oxide/three-dimensional perovskite/spiro-OMeTAD in comparative example 1, and (b) is a SEM cross-sectional view of FTO/tin oxide/three-dimensional perovskite/interface barrier layer/40 nm two-dimensional perovskite/spiro-OMeTAD in example 1 of the present invention, where the optimum thickness of evaporated lead iodide is 20nm and the optimum thickness of two-dimensional perovskite is 40nm, as shown in FIG. 4 (b).
After preparing the interfacial barrier layer on the surface of the perovskite layer in example 1 according to the method of example 1, lead iodide with different thicknesses was evaporated according to the method of example 1, and then a two-dimensional perovskite was formed by PEAI treatment according to the method of example 1, that is, a three-dimensional perovskite/interfacial barrier layer/two-dimensional perovskite thin film was finally formed, and XRD test was performed on the three-dimensional perovskite/interfacial barrier layer/two-dimensional perovskite thin film, as shown in fig. 5. In fig. 5, the different thicknesses represent the thicknesses of the resulting two-dimensional perovskite.
From FIG. 5 we can see that at 5.5 ℃ a two-dimensional perovskite PEA appears 2 PbI 4 And the intensity increases with the thickness of the two-dimensional perovskite, which is consistent with the results obtained by SEM.
Fig. 6 is a graph of the efficiency of the multilayer perovskite solar cell prepared in example 1 of the present application and the perovskite solar cell prepared in comparative example 1. In fig. 6, the three-dimensional perovskite represents the perovskite solar cell prepared in comparative example 1, and the three-dimensional perovskite/interface barrier layer/40 nm two-dimensional perovskite represents the multi-layered perovskite solar cell prepared in example 1.
As can be seen from fig. 6, the open circuit voltage of the multilayer perovskite solar cell prepared in example 1 is increased from 1.104V to 1.134V, the efficiency is also increased from 19.08% to 20.12% compared to the perovskite solar cell in comparative example 1, wherein the stability of the device is also significantly improved.
Fig. 7 shows a graph of the efficiency of the multilayer perovskite solar cell prepared in example 1 of the present application and the perovskite solar cell prepared in comparative example 1 under different aging times. In fig. 7, the three-dimensional perovskite represents the perovskite solar cell prepared in comparative example 1, and the three-dimensional perovskite/interface barrier layer/40 nm two-dimensional perovskite represents the multi-layered perovskite solar cell prepared in example 1.
As can be seen from fig. 7, the multilayer perovskite solar cell prepared in example 1 of the present application can maintain 80% of the original efficiency after being aged for 400h in an environment with a relative humidity of 85%, while the perovskite solar cell prepared in comparative example 1 can be reduced to below 80% after being aged for about 200 h.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, which is intended to cover any modifications, equivalents, improvements, etc. within the spirit and scope of the present invention.
Claims (10)
1. The preparation method of the interface barrier material is characterized by comprising the following steps of: dissolving the monomer A, the monomer B and an initiator in a solvent, and carrying out polymerization reaction at the temperature of 95-105 ℃ to obtain an interface barrier material;
the chemical formula of the monomer A is
The chemical formula of the monomer B is
2. The method for preparing an interfacial barrier material according to claim 1, wherein the initiator comprises at least one of an organic peroxide initiator, an inorganic peroxide initiator, an azo initiator and a redox initiator, and the solvent comprises at least one of ethyl acetate, chlorobenzene and isopropanol.
3. An interface barrier material produced by the production method according to claim 1 or 2.
4. A multi-layered perovskite solar cell, comprising:
a substrate;
the first transmission layer is positioned on the upper end face of the substrate;
the perovskite layers are positioned above the first transmission layer, the perovskite layer at the lowest part is positioned on the upper end face of the first transmission layer, an interface barrier layer is arranged between any two adjacent perovskite layers, and the upper end face and the lower end face of the interface barrier layer are respectively attached to the end faces of the perovskite layers;
the second transmission layer is positioned on the upper end face of the uppermost perovskite layer;
the counter electrode layer is positioned on the upper end face of the second transmission layer;
the preparation method of the interface barrier layer comprises the following steps: dissolving the monomer A, the monomer B and the initiator in the solvent according to claim 1 or 2 to obtain a precursor solution, spin-coating the precursor solution on a perovskite layer, and annealing at 95-105 ℃ to perform a polymerization reaction to obtain the interface barrier layer.
5. The multilayer perovskite solar cell of claim 4, wherein the perovskite layer comprises any one of a three-dimensional perovskite, a two-dimensional perovskite, and a one-dimensional perovskite.
6. The multilayer perovskite solar cell of claim 4, wherein when the first transport layer is an electron transport layer, the second transport layer is a hole transport layer;
when the first transport layer is a hole transport layer, the second transport layer is an electron transport layer.
7. The multi-layered perovskite solar cell of claim 6, wherein the electron transport layer material comprises tin oxide, [6,6,6 ] o]-phenyl-C 61 -any one of isopropyl butyrate, titanium oxide, zinc oxide, zirconium oxide, graphene and derivatives thereof.
8. The multi-layer perovskite solar cell of claim 6, wherein the hole transport layer material comprises poly bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, poly 3, 4-ethylenedioxythiophene: polystyrene sulfonate, poly-3-hexylthiophene, nickel oxide, molybdenum oxide.
9. The multi-layer perovskite solar cell of claim 4, wherein the material of the counter electrode layer comprises at least one of Al, ag, au, mo, C.
10. The multi-layer perovskite solar cell of claim 4, wherein the substrate is a transparent conductive substrate comprising ITO or FTO.
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