CN114188064A - PIN junction beta nuclear battery, preparation method thereof and battery pack - Google Patents
PIN junction beta nuclear battery, preparation method thereof and battery pack Download PDFInfo
- Publication number
- CN114188064A CN114188064A CN202111518719.0A CN202111518719A CN114188064A CN 114188064 A CN114188064 A CN 114188064A CN 202111518719 A CN202111518719 A CN 202111518719A CN 114188064 A CN114188064 A CN 114188064A
- Authority
- CN
- China
- Prior art keywords
- gan
- film
- pin junction
- beta
- type gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 26
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 21
- 239000010980 sapphire Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 44
- 239000010410 layer Substances 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000002346 layers by function Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 2
- 230000010354 integration Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000026683 transduction Effects 0.000 description 2
- 238000010361 transduction Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000026058 directional locomotion Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a PIN junction beta nuclear battery, a preparation method thereof and a battery pack, wherein the preparation method comprises the following steps: s1, growing a GaN epitaxial wafer on the sapphire substrate through metal organic chemical vapor deposition to obtain a p-i-n type GaN film of the sapphire substrate; s2, removing the sapphire substrate by laser lift-off to obtain a p-i-n type GaN film; s3, preparing the p-i-n type GaN film obtained in the step S2 into a GaN-based p-i-n diode; s4, assembling the GaN-based p-i-n diode obtained in the step S3 and a beta radiation source film to form the PIN junction beta nuclear battery. The overall thickness of the GaN-based p-i-n diode prepared by the method can be reduced to 10-100 mu m, and the thickness of the PIN junction beta nuclear battery can be reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a PIN junction beta nuclear battery, a preparation method thereof and a battery pack.
Background
The beta radiation volt effect isotope nuclear battery is an energy conversion device which utilizes the interaction between electrons generated by beta radiation source and semiconductor material to form electron-hole pairs, and generates directional movement under the self built-in electric field of the semiconductor to generate current. The power supply has the advantages of long service life, small volume, stable output, high energy density, strong anti-interference performance and the like, and is an ideal power supply of a micro-electro-mechanical system.
The beta radiation volt effect nuclear battery based on the wide bandgap semiconductor material such as GaN shows higher open circuit voltage, higher energy conversion efficiency and stronger radiation resistance, thus being paid much attention by researchers. On the other hand, in order to obtain a high-power nuclear battery device, compared with the method of optimizing the structural design of the transduction material and the device, the performance of a single device is further improved, and the method of carrying out series-parallel connection integration on the device is a more efficient and feasible method at present.
In the existing device preparation and integration method, the volume of a single device cannot be further reduced, and the ultrathin transduction material cannot be stably prepared, so that the integration density is low, and the output power cannot be substantially improved. In order to obtain a high-performance p-i-n structure micro integrated device, the first condition is to prepare an ultrathin single beta nuclear battery device.
Disclosure of Invention
The invention aims to provide a PIN junction beta nuclear battery, a preparation method thereof and a battery pack, which are used for predicting a temperature field in a metal annealing process and avoiding the problem of increase of residual stress of a plate due to unreasonable temperature field distribution.
IN addition, the invention also provides a battery pack assembled by the IN junction beta nuclear battery.
The invention is realized by the following technical scheme:
a preparation method of a PIN junction beta nuclear battery comprises the following steps:
s1, growing a GaN epitaxial wafer on the sapphire substrate through metal organic chemical vapor deposition to obtain a p-i-n type GaN film of the sapphire substrate;
s2, removing the sapphire substrate by laser lift-off to obtain a p-i-n type GaN film;
s3, preparing the p-i-n type GaN film obtained in the step S2 into a GaN-based p-i-n diode;
s4, assembling the GaN-based p-i-n diode obtained in the step S3 and a beta radiation source film to form the PIN junction beta nuclear battery.
Compared with mechanical cutting, the method for removing the sapphire substrate of the GaN epitaxial wafer by the laser lift-off method can quickly obtain the high-quality self-supporting GaN film.
The overall thickness of the GaN-based p-i-n diode prepared by the method can be reduced to 10-100 mu m, and the thickness of the PIN junction beta nuclear battery can be reduced.
The invention deposits an epitaxial sacrificial layer, namely a periodic superlattice formed by InN and GaN alternately on a sapphire substrate by an MBE or MOCVD method. The sacrificial layer is lattice matched with the GaN substrate, so that a high-quality GaN epitaxial layer can be smoothly grown on the sacrificial layer. The pulsed laser is then used to lift off the GaN again because the laser is strongly absorbed mainly by the InN layer, resulting in controlled decomposition of the sacrificial layer, and then the top GaN film is easily separated from the substructure by adhesive transfer, resulting in a GaN thin film with lower defect density.
Further, in step S1, the mocvd uses high-purity ammonia gas as a nitrogen source, trimethyl gallium as a gallium source, and hydrogen gas as a carrier gas.
Further, in step S1, the GaN epitaxial wafer has a structure comprising, from bottom to top, a GaN-based buffer layer (u-GaN), an n-type GaN layer (n-GaN) doped with SiH4, an unintentionally doped intrinsic GaN layer (i-GaN), and a Mg doped p-type GaN layer (p-GaN).
Further, the specific process in step S2 is as follows:
adhering GaN on a silicon substrate, irradiating ultraviolet wavelength pulse laser to the interface between the sapphire substrate and the GaN functional layer to peel off the sapphire substrate, and then heating to separate the GaN from the silicon substrate.
Further, the specific process of step S3 is as follows:
etching the surface of the p-type GaN layer by using an inductively coupled plasma etching system until the n-type GaN layer is exposed; the metal film is attached on the basis of a film transfer technology to form ohmic contact in the p region and the n region respectively, so that the p-i-n type GaN film is arranged between the top electrode and the bottom electrode, and the bottom electrode is arranged on a target substrate (such as a flexible substrate of polyimide and the like).
p-region metal: Ni/Au (10/10nm), n-block metal: Ti/Al/Ti/Au (20/20/20/300 nm).
Further, in step S4, the beta radiation source film is bonded to the top electrode of the GaN-based p-i-n diode.
Further, in step S4, the β radiation source film is an ultra-thin film having a thickness of less than 2 μm.
Further, in step S4, the beta radiation source used in the beta radiation source film includes63Ni、90Sr and90Y。
a PIN junction beta nuclear battery comprises a bottom electrode, a top electrode, a p-i-n type GaN film and a beta radiation source film, wherein the p-i-n type GaN film is arranged between the bottom electrode and the top electrode, and the beta radiation source film is attached to the top electrode.
A battery pack is formed by assembling two PIN junction beta nuclear batteries, wherein beta radiation source films in the two PIN junction beta nuclear batteries are attached to each other in a face-to-face mode during assembly, and the battery pack is a high-power stacked beta nuclear battery.
The ultrathin face-to-face sandwich double-layer beta nuclear battery device obtained by combining the ultrathin self-supporting GaN-based diode provided by the invention with the ultrathin radiation source greatly reduces the thickness of a repeating unit of the device. On the basis, the high-power beta radiation volt nuclear battery can be obtained by stacking in series.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. the overall thickness of the GaN-based p-i-n diode prepared by the method can be reduced to 10-100 mu m, and the thickness of the PIN junction beta nuclear battery can be reduced.
2. The face-to-face sandwich double-layer GaN-based beta radiation photovoltaic nuclear battery prepared by the invention can effectively reduce the thickness of the repeating unit of the device through the self-supporting GaN film and the ultrathin radiation source, and can greatly improve the integration level and the power of the battery.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a GaN-based p-i-n thin film;
FIG. 2 is a flow chart of the preparation of an ultrathin GaN-based PIN junction beta nuclear battery;
fig. 3 is a flow chart of stacked cell device fabrication.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1:
as shown in fig. 1 to 3, a method for preparing a PIN junction beta nuclear battery comprises the following steps:
s1, growing a GaN epitaxial wafer on the sapphire substrate through metal organic chemical vapor deposition to obtain a p-i-n type GaN film of the sapphire substrate;
specifically, the method comprises the following steps:
a p-i-n structure thin film of GaN was epitaxially grown on a 2-inch sapphire substrate using Metal Organic Chemical Vapor Deposition (MOCVD), and first, a low-temperature GaN nucleation layer with a thickness of 50nm was grown as a buffer layer to prevent defects caused by lattice mismatch with sapphire from propagating into the subsequent GaN epitaxial layer. A high quality undoped GaN layer of 1500nm was then grown. Finally, the p-i-n structure comprised 1000nm Si-doped n + -GaN (doping concentration 2X 1019cm-3), 300nm undoped i-GaN (electron concentration 1.43X 1015cm-3) and 50nm Mg doped p-GaN (doping concentration 1X 1019cm-3) layers. Subsequently, the wafer was annealed at 750 ℃ for 25 minutes in an atmosphere of N2 to activate the Mg dopant.
The GaN epitaxial wafer sequentially comprises a GaN-based buffer layer (u-GaN), an n-type GaN layer (n-GaN) taking SiH4 as a dopant, an unintentionally doped intrinsic type GaN layer (i-GaN) and an Mg doped p-type GaN layer (p-GaN) from bottom to top.
S2, removing the sapphire substrate by laser lift-off to obtain a p-i-n type GaN film;
specifically, the method comprises the following steps:
and adhering the P surface of the prepared P-i-n GaN epitaxial wafer to a Si substrate by using epoxy resin. The laser of KrF excimer laser with wavelength of 248nm and pulse width of 38ns is used as the irradiation light source. And adjusting the optical path and output pulse of the excimer laser, rotating the sample, and scanning the laser in a spiral line stepping mode from the edge of the sample. After the laser scans the sample, the sapphire substrate falls off, and the sample is soaked by hydrochloric acid in a ratio of 1:1 to remove metal Ga on the GaN. And putting the GaN/Si film into acetone to strip the silicon wafer from the GaN, thereby obtaining the self-supporting GaN-based p-i-n film.
S3, preparing the p-i-n type GaN film obtained in the step S2 into a GaN-based p-i-n diode;
etching the surface of the p-type GaN layer by using an inductively coupled plasma etching system until the n-type GaN layer is exposed; and attaching a metal film on the basis of a film transfer technology to form ohmic contacts on the p region and the n region respectively, so that the p-i-n type GaN film is arranged between the top electrode and the bottom electrode, and the bottom electrode is arranged on the target substrate.
S4, assembling the GaN-based p-i-n diode obtained in the step S3 and a beta radiation source film to form a PIN junction beta nuclear battery;
during operation, the beta radiation source film is firstly contacted with one end of the GaN-based diode film, then the GaN-based p-i-n diode is slightly drawn out, the beta radiation source film and the GaN-based diode film are completely attached, bubbles are prevented from being generated in the middle, and a sample is naturally dried and baked after the attachment is finished. The beta radiation source film is closely attached to the GaN-based diode film, and the sample is taken down and naturally cooled to room temperature after baking is finished.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A preparation method of a PIN junction beta nuclear battery is characterized by comprising the following steps:
s1, growing a GaN epitaxial wafer on the sapphire substrate through metal organic chemical vapor deposition to obtain a p-i-n type GaN film of the sapphire substrate;
s2, removing the sapphire substrate by laser lift-off to obtain a p-i-n type GaN film;
s3, preparing the p-i-n type GaN film obtained in the step S2 into a GaN-based p-i-n diode;
s4, assembling the GaN-based p-i-n diode obtained in the step S3 and a beta radiation source film to form the PIN junction beta nuclear battery.
2. The method of claim 1, wherein in step S1, the metal organic chemical vapor deposition process includes using high purity ammonia gas as a nitrogen source, trimethyl gallium as a gallium source, and hydrogen gas as a carrier gas.
3. The method of claim 1, wherein in step S1, the GaN epitaxial wafer comprises a GaN-based buffer layer, an n-type GaN layer doped with SiH4, an unintentionally doped intrinsic GaN layer, and a Mg doped p-type GaN layer in sequence from bottom to top.
4. The method for preparing a PIN junction beta nuclear battery according to claim 1, wherein the specific process in step S2 is as follows:
adhering GaN on a silicon substrate, irradiating ultraviolet wavelength pulse laser to the interface between the sapphire substrate and the GaN functional layer to peel off the sapphire substrate, and then heating to separate the GaN from the silicon substrate.
5. The method for preparing a PIN junction beta nuclear battery according to claim 1, wherein the specific process of step S3 is as follows:
etching the surface of the p-type GaN layer by using an inductively coupled plasma etching system until the n-type GaN layer is exposed; and attaching a metal film on the basis of a film transfer technology to form ohmic contacts on the p region and the n region respectively, so that the p-i-n type GaN film is arranged between the top electrode and the bottom electrode.
6. The method of claim 1, wherein in step S4, the beta radiation source film is bonded to a top electrode of the GaN-based p-i-n diode.
7. The method of claim 1, wherein in step S4, the beta radiation source film is an ultra-thin film with a thickness of less than 2 μm.
8. The method of claim 1, wherein the beta radiation source used in the beta radiation source film of step S4 comprises63Ni、90Sr and90Y。
9. the PIN junction beta nuclear battery prepared by the preparation method according to any one of claims 1 to 8, wherein the PIN junction beta nuclear battery comprises a bottom electrode, a top electrode, a p-i-n type GaN thin film and a beta radiation source thin film, the p-i-n type GaN thin film is arranged between the bottom electrode and the top electrode, and the beta radiation source thin film is attached to the top electrode.
10. A battery pack assembled from two PIN junction beta nuclear cells according to claim 9, wherein the beta radiation source films of the two PIN junction beta nuclear cells are attached face-to-face during assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111518719.0A CN114188064A (en) | 2021-12-13 | 2021-12-13 | PIN junction beta nuclear battery, preparation method thereof and battery pack |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111518719.0A CN114188064A (en) | 2021-12-13 | 2021-12-13 | PIN junction beta nuclear battery, preparation method thereof and battery pack |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114188064A true CN114188064A (en) | 2022-03-15 |
Family
ID=80543481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111518719.0A Withdrawn CN114188064A (en) | 2021-12-13 | 2021-12-13 | PIN junction beta nuclear battery, preparation method thereof and battery pack |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114188064A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN104064240A (en) * | 2014-06-29 | 2014-09-24 | 西安电子科技大学 | Epitaxy GaN PIN structure beta irradiation battery and preparation method thereof |
| CN114203329A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN-based Schottky diode, beta nuclear battery and preparation method thereof |
-
2021
- 2021-12-13 CN CN202111518719.0A patent/CN114188064A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527175A (en) * | 2009-04-10 | 2009-09-09 | 苏州纳米技术与纳米仿生研究所 | PIN type nuclear battery and preparation method thereof |
| CN104064240A (en) * | 2014-06-29 | 2014-09-24 | 西安电子科技大学 | Epitaxy GaN PIN structure beta irradiation battery and preparation method thereof |
| CN114203329A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN-based Schottky diode, beta nuclear battery and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9853176B2 (en) | Nitride-based multi-junction solar cell modules and methods for making the same | |
| US9716201B2 (en) | Silicon heterojunction photovoltaic device with wide band gap emitter | |
| US8987042B2 (en) | Ohmic N-contact formed at low temperature in inverted metamorphic multijunction solar cells | |
| US6300558B1 (en) | Lattice matched solar cell and method for manufacturing the same | |
| JP2015073130A (en) | Four junction inverted metamorphic multi-junction solar cell with two metamorphic layers | |
| JP2010118666A (en) | Alternative substrate of inversion altered multi-junction solar battery | |
| US20120211073A1 (en) | Solar cell | |
| CN113964217A (en) | InGaN/GaN multi-quantum well blue laser cell epitaxial wafer and preparation method thereof | |
| US20130139877A1 (en) | Inverted metamorphic multijunction solar cell with gradation in doping in the window layer | |
| JP2022540991A (en) | Power photodiode structure, method of making the same, and method of using the same | |
| JP2011198975A (en) | Tandem type solar cell | |
| Horng et al. | Thin film solar cells fabricated using cross-shaped pattern epilayer lift-off technology for substrate recycling applications | |
| TWI496314B (en) | Compound semiconductor solar cell manufacturing laminated body, compound semiconductor solar cell and manufacturing method thereof | |
| US20150122329A1 (en) | Silicon heterojunction photovoltaic device with non-crystalline wide band gap emitter | |
| CN114188064A (en) | PIN junction beta nuclear battery, preparation method thereof and battery pack | |
| CN102738267B (en) | Solar battery with superlattices and manufacturing method thereof | |
| JP2012190990A (en) | Tandem solar battery cell | |
| JPH08274358A (en) | Iii-v compound semiconductor solar cell | |
| CN113851546A (en) | Green-light nitride laser cell epitaxial wafer and preparation method thereof | |
| Fan et al. | Epitaxial GaAsP/Si tandem solar cells with integrated light trapping | |
| CN110504334A (en) | A kind of InGaN/GaN multiple quantum wells solar battery of high In ingredient | |
| US9853180B2 (en) | Inverted metamorphic multijunction solar cell with surface passivation | |
| US20220165901A1 (en) | Extreme and deep ultraviolet photovoltaic cell | |
| CN114203327A (en) | P-i-n junction, preparation method, diode and beta nuclear battery | |
| CN105449015B (en) | Micro-nano pyramid silicon/InGaN heterozygosis pn-junction solar cells and its preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20220315 |
|
| WW01 | Invention patent application withdrawn after publication |