CN114171870B - Transmission line integrated lumped element and transmission line - Google Patents

Transmission line integrated lumped element and transmission line Download PDF

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CN114171870B
CN114171870B CN202111494029.6A CN202111494029A CN114171870B CN 114171870 B CN114171870 B CN 114171870B CN 202111494029 A CN202111494029 A CN 202111494029A CN 114171870 B CN114171870 B CN 114171870B
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transmission line
dielectric
lumped
strip
dielectric strip
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CN114171870A (en
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李越
秦绪
孙旺宇
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Tsinghua University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor

Abstract

The present invention relates to transmission line integrated lumped elements implemented by replacing a portion of the background dielectric within a transmission line with a sub-wavelength dielectric strip having a dielectric constant different from the background dielectric of the transmission line. When the dielectric constant of the dielectric strip is larger than that of the background dielectric in the transmission line, the dielectric strip is characterized by lumped capacitance; dielectric strips behave as lumped inductors when their dielectric constant is less than that of the background dielectric in the transmission line. The transmission line types suitable for the lumped element comprise metal waveguide, dielectric waveguide, coaxial line, dielectric integrated coaxial line, strip line, microstrip line and the like. Compared with the traditional lumped element, the transmission line integrated lumped element is easier to integrate with various different types of transmission lines, has the advantages of small size, low loss and the like, and is suitable for the design concept from a microwave frequency band to an optical frequency band. Based on this invention, lumped circuits, devices or equipment with different functions and applications can be constructed.

Description

Transmission line integrated lumped element and transmission line
Technical Field
The invention belongs to the technical field of electronic components, and particularly relates to a transmission line integrated lumped element and a transmission line.
Background
Capacitive and inductive elements are widely used in various circuit systems and electronic devices. When the size of the capacitive and inductive elements is much smaller than the wavelength corresponding to the operating frequency of the circuit, they are called lumped elements, where lumped capacitance is generally realized by two parallel conductors and lumped inductance is generally realized by a spirally wound coil. The lumped element has the advantages of small size, accurate element value, easy integration with a microstrip transmission line and the like, and the research on the theory of the lumped circuit is rather mature, thereby greatly simplifying the design difficulty of the lumped circuit. However, due to the influence of circuit parasitic parameters, the lumped element generally can only work in a microwave low frequency band, and is difficult to be applied to the design of a high-frequency circuit; meanwhile, due to the structural limitation of the lumped element, it is difficult to integrate with other types of transmission lines such as waveguides and coaxial lines. In the high frequency band, although one can use distributed elements to realize capacitance and inductance characteristics, such as capacitance using an interdigital structure and inductance using a transmission line length, the distributed elements have a larger size compared to lumped elements, comparable to the wavelength corresponding to the operating frequency, and also have a problem of difficulty in integration with various types of transmission lines. Therefore, how to design a capacitor and an inductor with wide applicable frequency range, small size and easy integration is a very worthy of research.
Disclosure of Invention
In order to overcome the disadvantages of the prior art, the present invention provides an integrated lumped element for a transmission line and a transmission line, which realizes the characteristics of equivalent lumped capacitance and lumped inductance by inserting sub-wavelength dielectric strips with different dielectric constants and sizes into background dielectrics in the transmission line, and provides an analytic calculation formula of element values, thereby achieving the purposes of easy integration, small size and wide operating frequency.
In order to achieve the purpose, the invention adopts the technical scheme that:
the transmission line integrated lumped element is a dielectric strip with uniform dielectric constant, the dielectric constant of the dielectric strip is different from that of a background medium in a transmission line, and the dielectric strip replaces part of the background medium in the transmission line and presents the characteristics of lumped capacitance or lumped inductance.
Correspondingly, the invention also provides a transmission line, wherein part of the background medium in the transmission line is replaced by the dielectric strip with uniform dielectric constant, and the dielectric constant of the dielectric strip is different from that of the background medium in the transmission line, so that the transmission line has the characteristics of lumped capacitance or lumped inductance.
In one embodiment, the cross section of the dielectric strip has the same shape as that of the background dielectric in the transmission line, and the size of the cross section of the dielectric strip is the same as that of the background dielectric in the transmission line along the propagation direction of the electromagnetic wave.
In one embodiment, along the propagation direction of the electromagnetic wave, the size of the dielectric strip is far smaller than the wavelength corresponding to the working frequency, and the dielectric strip is in a sub-wavelength scale and has the characteristics of a lumped element.
In one embodiment, the dielectric strip exhibits lumped capacitance characteristics when its dielectric constant is greater than that of the background dielectric in the transmission line; dielectric strips exhibit the characteristic of lumped inductance when their dielectric constant is less than that of the background dielectric in the transmission line.
In one embodiment, the equivalent lumped capacitance or inductance of the dielectric strip is calculated by the difference between the dielectric constant of the dielectric strip and the dielectric constant of the background dielectric in the transmission line and the width of the dielectric strip.
In one embodiment, the transmission line is of the type of a metal waveguide, a dielectric waveguide, a coaxial line, a dielectric integrated coaxial line, a strip line or a microstrip line; the dielectric strip is in a cuboid shape or a cylinder shape according to different transmission line types.
In one embodiment, the alternative is: a part of the background medium in the transmission line is hollowed along the propagation direction of the electromagnetic wave, and then dielectric strips with the same shape and size are placed in the transmission line.
In one embodiment, the transmission line operates in a propagation mode, the transmission line being suitable for any operating frequency from the microwave frequency band to the optical frequency band.
In one embodiment, multiple dielectric strips are integrated into the transmission line, thereby introducing multiple lumped capacitances or inductances, and lumped circuits with different functions can be designed based on circuit theory.
Multiple lumped capacitances or inductances can be introduced by integrating multiple dielectric strips within the transmission line.
Compared with the prior art, the invention has the beneficial effects that:
first, the dielectric strips of the present invention are sub-wavelength in size, and have the advantage of small size of conventional lumped elements.
Secondly, the invention is easy to integrate with various transmission lines, can realize the effects of capacitance and inductance only by replacing part of background medium in the original transmission line, and has simple design method.
Thirdly, the capacitance and inductance of the components of the present invention can be accurately calculated by the given analytical formula.
Fourthly, compared with the traditional lumped element, the frequency band of the invention is wider, and the invention is suitable for any frequency band from microwave to optics.
Fifthly, the invention introduces the traditional lumped circuit theory into the transmission line integrated lumped circuit design, and opens up a new way for realizing the lumped circuit or equipment with high integration level and compact structure.
Drawings
Fig. 1 is a conceptual diagram of a transmission line integrated lumped element according to the present invention.
Fig. 2 is a schematic structural and dimensional diagram of the first embodiment.
FIG. 3 is a diagram comparing theoretical and simulated component values according to the first embodiment, which includes: (a) Capacitance value dependent on epsilon DS (b) capacitance value as a function of t, (c) inductance value as a function of ε DS (d) inductance value as a function of t.
Fig. 4 is a schematic structural and dimensional diagram of the second embodiment.
FIG. 5 is a comparison graph of theoretical and simulated component values for the second embodiment, which includes: (a) Capacitance value according to epsilon DS (b) variation of capacitance with t, (c) variation of inductance with e DS (ii), (d) inductance value as a function of t.
Fig. 6 is a schematic structural and dimensional view of the third embodiment.
FIG. 7 is a comparison graph of theoretical and simulated component values for the third embodiment, which includes: (a) Capacitance value according to epsilon DS (b) capacitance value as a function of t, (c) inductance value as a function of ε DS (d) inductance value as a function of t.
FIG. 8 is a schematic diagram showing the structure and dimensions of the fourth embodiment.
FIG. 9 is a comparison graph of theoretical and simulated component values for the fourth embodiment, which includes: (a) Capacitance value according to epsilon DS (b) capacitance value as a function of t, (c) inductance value as a function of ε DS (d) inductance value as a function of t.
FIG. 10 is a schematic diagram showing the structure and dimensions of the fifth embodiment.
FIG. 11 is a comparison graph of theoretical and simulated component values for example five, which includes: (a) Capacitance value dependent on epsilon DS (b) variation of capacitance with t, (c) variation of inductance with e DS (ii), (d) inductance value as a function of t.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments, it should be understood that the specific embodiments described herein are only for explaining the present invention and are not used to limit the protection scope of the present invention.
Referring to fig. 1, a conceptual diagram of the transmission line integrated lumped element of the present invention is shown, and a specific implementation form of the proposed element in five reference transmission line structures is shown. The types of the transmission line I1, the transmission line II 2, the transmission line III 3, the transmission line IV 4 and the transmission line V5 are respectively a waveguide, a dielectric integrated coaxial line, a strip line and a microstrip line, which all work in a propagation mode, and the relative dielectric constants of the background medium I11, the background medium II 21, the background medium III 31, the background medium IV 41 and the background medium V51 filled in the transmission lines are assumed to be epsilon TL The characteristic impedance of the transmission line is Z C . Part of background medium in the transmission line is replaced by the transmission line integrated lumped element provided by the invention, namely the dielectric strip I12, the dielectric strip II 22, the dielectric strip III 32, the dielectric strip IV 42 and the dielectric strip V52, and the relative dielectric constant of the transmission line integrated lumped element is assumed to be epsilon DS The width in the electromagnetic wave propagation direction (positive y-axis direction) is t. Then, when the dielectric constant of the dielectric strip is larger than the dielectric constant epsilon of the background medium in the transmission line TL The dielectric strip is represented by a lumped capacitive element, and the element value can be calculated by formula (1):
Figure BDA0003399472460000041
at this time, the impedance value of the lumped capacitive element can be calculated by equation (2):
Figure BDA0003399472460000051
accordingly, when the dielectric constant of the dielectric strip is smaller than that of the background dielectric in the transmission line, the dielectric strip behaves as a lumped inductance element, and the element value thereof can be calculated by formula (3):
Figure BDA0003399472460000052
at this time, the impedance value of the lumped inductance element can be calculated by equation (4):
Z DS-C ＝j2πf 0 L DS (4)
as can be seen from the above equations (1) - (4), when the operating frequency f is 0 After the transmission line type and the characteristic impedance are determined, the capacitance and inductance values of the transmission line integrated lumped element are determined by the relative dielectric constant epsilon of the dielectric strip DS Relative dielectric constant epsilon with the background medium in the transmission line TL Difference of (a) = (epsilon) DS -ε TL ) And the media strip width t. By adjusting the values of Δ and t, the dielectric strips can be equivalent to lumped elements with different capacitance or inductance values.
Five specific embodiments are given according to the design schematic above, and are explained below with reference to the accompanying drawings.
Example one
Fig. 2 is a schematic structural and dimensional diagram according to a first embodiment. In this embodiment, the type of transmission line used is a rectangular metal waveguide, the front, back, top and bottom surfaces are all metal boundary conditions, and the dimension along the x-direction is 1.89mm, and the dimension along the z-direction is 1mm. Operating frequency of f 0 =30GHz, selected operating mode is TE 10 Mode, the electromagnetic field propagation direction is positive y direction, the electric field is along z direction, and the relative dielectric constant of the background medium in the transmission line is epsilon TL =11, and the characteristic impedance of the transmission line is 188.1 Ω. A cross-sectional area of 1.89mm × 1mm, a width of t, and a relative dielectric constant of ∈ DS The rectangular dielectric strip is inserted into the rectangular metal waveguide and represents lumped capacitance or lumped inductance.
Referring to fig. 3, a comparison graph of theoretical and simulated component values for the first embodiment is shown. The theoretical component values are calculated by the formulas (1) and (3), and the simulation component values are obtained by modeling and simulating the structure of fig. 2 in commercial simulation software HFSS. In FIG. 3, (a), (b), ε DS >ε TL And =11, the dielectric strips are represented as lumped capacitors. FIG. 3 (a) shows the capacitance of the element as ε DS Graph of variation (element width t fixed at 0.3 mm), where ε DS The range of variation of (3) is 11 to 21. FIG. 3 (b) shows a graph (ε) of capacitance value of an element as a function of width t of the element DS Fixed at 17), wherein t varies from 0.1mm to 0.5mm. FIG. 3 (c-d), ε DS <ε TL =11, the dielectric strips behave as lumped inductances. In FIG. 3 (c) shows the inductance of the element as a function of ε DS Graph of variation (element width t fixed at 0.3 mm) in which ε DS The range of variation of (3) is 1 to 11. FIG. 3 (d) shows a graph of the inductance of the element (ε) as a function of the element width t DS Fixed as 5), wherein t varies from 0.1mm to 0.5mm. In fig. 3, the theoretical element values (a) to (d) are well matched with the simulated element values, which shows that the transmission line integrated lumped element has good working performance in the rectangular metal waveguide.
Example two
Fig. 4 is a schematic diagram illustrating the structure and dimensions of the second embodiment. In this embodiment, the type of transmission line used is a rectangular dielectric waveguide, the front and back surfaces are open boundary conditions, and the upper and lower surfaces are ideal magnetic boundaries. The waveguide has a dimension in the z-direction of 3mm. Operating frequency of f 0 =30GHz, selected operating mode is TE 0 Mode, the propagation direction of electromagnetic field is positive y direction, and the relative dielectric constant of background medium in transmission line is epsilon TL =11, the characteristic impedance of the transmission line at this time is 121.49 Ω. Width t and relative dielectric constant ε DS The rectangular dielectric strip is inserted into the rectangular metal waveguide and represents lumped capacitance or lumped inductance.
Referring to fig. 5, a comparison graph of theoretical and simulated element values for example two is shown. In FIG. 5 (a), (b) show the lumped element capacitance values as t andε DS in FIG. 5, (c) and (d) show the inductance values of the lumped elements as t and ε DS . In fig. 5, the theoretical element values (a) to (d) are well matched with the simulated element values, which shows that the transmission line integrated lumped element has good working performance in the rectangular dielectric waveguide.
EXAMPLE III
Fig. 6 is a schematic diagram illustrating the structure and dimensions of the third embodiment. In this embodiment, the type of transmission line used is a dielectric integrated coaxial line, the four surfaces, front, back, top and bottom, are all metal boundary conditions as the outer conductor of the transmission line, and the inner conductor is placed in the metal strip at the center of the transmission line. The outer conductor has a dimension of 0.5mm in the x-direction, a dimension of 0.25mm in the z-direction, and the inner conductor has a dimension of 0.04mm in the x-direction. Operating frequency of f 0 =30GHz, the selected operating mode is TEM mode, the electromagnetic field propagation direction is positive y direction, and the relative dielectric constant of the background medium in the transmission line is epsilon TL =11, and the characteristic impedance of the transmission line at this time is 49.9 Ω. Width t and relative dielectric constant ε DS The cuboid dielectric strip is inserted into the transmission line and is represented as lumped capacitance or lumped inductance.
Referring to fig. 7, a comparison graph of theoretical and simulated element values for example three is shown. In FIG. 7 (a), (b) show the values of the lumped element capacitance with t and ε DS In FIG. 7 (c), (d) show the values of the lumped element inductances with t and ε DS . In fig. 7, the theoretical element values (a) - (d) are better matched with the simulated element values, which shows that the inventive transmission line integrated lumped element has good working performance in the dielectric integrated coaxial line.
Example four
Fig. 8 is a schematic structural and dimensional diagram of the fourth embodiment. In this embodiment, the type of transmission line used is a cylindrical coaxial line, the outer surface is a metallic boundary condition as the outer conductor of the transmission line, and the inner conductor is a metallic thin post placed in the center of the transmission line. The diameter of the outer conductor is 5.8mm and the diameter of the inner conductor is 0.37mm. Operating frequency of f 0 =30GHz, the selected working mode is a TEM mode, the electromagnetic field propagation direction is a positive y direction, and the transmission line has a background mediumHas a relative dielectric constant of epsilon TL =11, and the characteristic impedance of the transmission line at this time is 49.7 Ω. Width t and relative dielectric constant ε DS The dielectric strip (the middle of which needs to be hollowed out to pass through the inner conductor) of the cylindrical shape is inserted into the transmission line and represents lumped capacitance or lumped inductance.
Referring to fig. 9, a comparison graph of theoretical and simulated element values for the fourth embodiment is shown. In FIG. 9 (a), (b) show the values of the lumped element capacitance with t and ε DS In FIG. 9 (c) and (d) show the values of the lumped element inductances with t and ε DS . In fig. 9, the theoretical element values (a) to (d) are well matched with the simulated element values, which shows that the inventive transmission line integrated lumped element has good working performance in the cylindrical coaxial line.
EXAMPLE five
Fig. 10 is a schematic structural and dimensional diagram of the fourth embodiment. In this embodiment, the type of transmission line used is a strip line, the upper and lower surfaces are both metal boundary conditions as the outer conductor of the transmission line, and the inner conductor is placed in a metal strip in the center of the transmission line. The outer conductor has a dimension of 10mm in the x-direction, a dimension of 5mm in the z-direction, and the inner conductor has a dimension of 1mm in the x-direction. Operating frequency of f 0 =30GHz, the selected working mode is a TEM mode, the electromagnetic field propagation direction is a positive y direction, and the relative dielectric constant of a background medium in the transmission line is epsilon TL =11, the characteristic impedance of the transmission line at this time is 50.3 Ω. Width t and relative dielectric constant ε DS The rectangular dielectric strip is inserted into the transmission line and represents lumped capacitance or lumped inductance.
Referring to fig. 11, a comparison graph of theoretical and simulated element values for example five is shown. In FIG. 11 (a), (b) show the values of the lumped element capacitance with t and ε DS In FIG. 11 (c), (d) show the values of the lumped element inductances with t and ε DS . In fig. 11, the theoretical element values (a) - (d) are better matched with the simulation element values, which shows that the transmission line integrated lumped element has good working performance in the strip line.
In further embodiments of the present invention, the transmission line integrated lumped element is applicable to microstrip lines, coplanar waveguides, and other common transmission line types. Transmission line integrated circuits having different functions can be designed by integrating a plurality of transmission line integrated lumped elements in a transmission line, wherein the characteristics of each of the transmission line integrated lumped elements can be characterized by equations (1) to (4). A circuit containing a plurality of transmission line integrated lumped elements can be designed using classical lumped circuit theory. In addition, the dielectric constant, the size, the structure, the working frequency and the working mode of the transmission line selected in the embodiment can be adjusted according to actual requirements, and the working principle and the design concept are kept unchanged.
Compared with the traditional lumped element, the transmission line integrated lumped element provided by the invention is easier to integrate with various transmission lines of different types, has the advantages of small size, low loss and the like, and is suitable for a design concept from a microwave frequency band to an optical frequency band. Based on this invention, lumped circuits, devices or equipment with different functions and applications can be constructed.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, substitutions, improvements, etc. made within the spirit and scope of the present invention should be included in the protection scope of the present invention.
In summary, the transmission line integrated lumped element provided by the invention can be integrated with various transmission lines of different types, has the advantages of small size, low loss and the like, and is suitable for a design concept from a microwave frequency band to an optical frequency band. Based on this invention, lumped circuits, devices or equipment with different functions and applications can be constructed.

Claims (9)

1. An integrated lumped element of transmission line is a dielectric strip with uniform dielectric constant, the dielectric constant of the dielectric strip is different from that of the background medium in the transmission line, the dielectric strip replaces part of the background medium in the transmission line and presents the characteristic of lumped capacitance or lumped inductance; the capacitance and inductance values of the transmission line integrated lumped element are defined by the relative dielectric constant epsilon of the dielectric strip DS Relative dielectric constant epsilon with the background medium in the transmission line TL Difference Δ = (epsilon) DS -ε TL ) And, anddetermining the width t of the dielectric strip, wherein the dielectric strip is equivalent to a lumped element with different capacitance values or inductance values by adjusting the values of delta and t; along the electromagnetic wave propagation direction, the size of the dielectric strip is far smaller than the wavelength corresponding to the working frequency, the dielectric strip is in a sub-wavelength scale, and the dielectric strip has the characteristics of a lumped element.
2. The transmission line is characterized in that part of the background medium in the transmission line is replaced by a dielectric strip with uniform dielectric constant, and the dielectric constant of the dielectric strip is different from that of the background medium in the transmission line, so that the transmission line has the characteristics of lumped capacitance or lumped inductance; the capacitance and inductance values of the transmission line integrated lumped element are defined by the relative dielectric constant epsilon of the dielectric strip DS Relative dielectric constant epsilon with the background medium in the transmission line TL Difference Δ = (epsilon) DS -ε TL ) And determining the width t of the dielectric strip, wherein the dielectric strip is equivalent to a lumped element with different capacitance values or inductance values by adjusting the values of delta and t; along the electromagnetic wave propagation direction, the size of the dielectric strip is far smaller than the wavelength corresponding to the working frequency, the dielectric strip is in a sub-wavelength scale, and the dielectric strip has the characteristics of a lumped element.
3. The transmission line according to claim 2, wherein the cross-section of the dielectric strip has the same shape as the cross-section of the background dielectric in the transmission line, and the cross-section of the dielectric strip has the same size as the cross-section of the background dielectric in the transmission line along the propagation direction of the electromagnetic wave.
4. The transmission line of claim 2, wherein the dielectric strip exhibits lumped capacitance characteristics when the dielectric constant of the dielectric strip is greater than the dielectric constant of a background dielectric in the transmission line; dielectric strips exhibit the characteristic of lumped inductance when their dielectric constant is less than that of the background dielectric in the transmission line.
5. The transmission line according to claim 4, wherein the equivalent lumped capacitance or inductance of the dielectric strip is calculated by the difference between the dielectric constant of the dielectric strip and the dielectric constant of the background dielectric in the transmission line and the width of the dielectric strip.
6. The transmission line according to claim 2, characterized in that the type of the transmission line is a metallic waveguide, a dielectric waveguide, a coaxial line, a dielectric integrated coaxial line, a strip line or a microstrip line; the dielectric strip is in a cuboid shape or a cylinder shape according to different transmission line types.
7. The transmission line according to claim 2, characterized in that said alternatives are: a part of the background medium in the transmission line is hollowed along the propagation direction of the electromagnetic wave, and then the medium strips with the same shape and size are placed in the transmission line.
8. The transmission line according to claim 2, characterized in that it operates in a propagation mode, said transmission line being suitable for any operating frequency from the microwave band to the optical band.
9. The transmission line of claim 2, wherein a plurality of dielectric strips are integrated into the transmission line, thereby introducing a plurality of lumped capacitances or inductances.
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Publication number Priority date Publication date Assignee Title
CN102522618A (en) * 2011-12-29 2012-06-27 北京理工大学 Active left-handed transmission line formed by lumped element and diode
CN107863240A (en) * 2017-10-30 2018-03-30 清华大学 A kind of high q-factor low-loss parallel-plate inductance based on waveguide Meta Materials concept

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
CN102522618A (en) * 2011-12-29 2012-06-27 北京理工大学 Active left-handed transmission line formed by lumped element and diode
CN107863240A (en) * 2017-10-30 2018-03-30 清华大学 A kind of high q-factor low-loss parallel-plate inductance based on waveguide Meta Materials concept

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