CN114171498A - Radio frequency module and radio frequency device - Google Patents

Radio frequency module and radio frequency device Download PDF

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Publication number
CN114171498A
CN114171498A CN202111453283.1A CN202111453283A CN114171498A CN 114171498 A CN114171498 A CN 114171498A CN 202111453283 A CN202111453283 A CN 202111453283A CN 114171498 A CN114171498 A CN 114171498A
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Prior art keywords
radio frequency
layer
metal
micro
signal transmission
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CN202111453283.1A
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Chinese (zh)
Inventor
梁骥
陆原
裘进
张光瑞
张栓
陈学志
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Silex Microsystems Technology Beijing Co ltd
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Silex Microsystems Technology Beijing Co ltd
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Priority to CN202111453283.1A priority Critical patent/CN114171498A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/06—Coaxial lines

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The invention discloses a radio frequency module and a radio frequency device, wherein the radio frequency module comprises: n radio frequency units which are mutually connected in series and/or in parallel; each of the radio frequency units includes: a micro-coaxial transmission layer; the micro-coaxial cable comprises a first micro-coaxial transmission line and a second micro-coaxial transmission line, wherein the first micro-coaxial transmission line comprises a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line comprises a second signal transmission metal and a second shielding metal; a radio frequency chip electrically connected between the first signal transmission metal and the second signal transmission metal; the plastic packaging layer is arranged on the micro coaxial transmission layer in a covering mode; the plastic packaging layer is provided with a first planting ball which is connected to the first signal transmission metal through a first conductor column; and a second ball implant connected to the second signal transmission metal through a second conductive post. The radio frequency module can effectively integrate radio frequency chips with various different functions.

Description

Radio frequency module and radio frequency device
Technical Field
The application relates to the technical field of semiconductors, in particular to a radio frequency module and a radio frequency device.
Background
With the continuous development of integrated circuit technology, the required size of the chip is smaller and smaller, and the demand for integrating radio frequency chips or radio frequency components with multiple functions is promoted, so that new challenges are brought to the chip integration technology and the packaging technology. Moreover, signal transmission between the rf chips requires a special transmission line, and how to integrate and package multiple rf chips and signal transmission lines together is a problem that needs to be solved at present.
Disclosure of Invention
The invention provides a radio frequency module and a radio frequency device, which aim to solve or partially solve the technical problem that various radio frequency chips are difficult to integrate and package at present.
To solve the above technical problem, according to an alternative embodiment of the present invention, there is provided a radio frequency module, including: n radio frequency units which are mutually connected in series and/or in parallel;
each of the radio frequency units includes:
a micro-coaxial transmission layer; the micro-coaxial cable comprises a first micro-coaxial transmission line and a second micro-coaxial transmission line, wherein the first micro-coaxial transmission line comprises a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line comprises a second signal transmission metal and a second shielding metal;
a radio frequency chip electrically connected between the first signal transmission metal and the second signal transmission metal;
the plastic packaging layer is arranged on the micro coaxial transmission layer in a covering mode; the plastic packaging layer is provided with a first planting ball which is connected to the first signal transmission metal through a first conductor column; and a second ball implant connected to the second signal transmission metal through a second conductive post.
Optionally, the radio frequency module further includes a passivation layer disposed between the micro-coaxial transmission layer and the plastic package layer;
a first rewiring layer is arranged in the passivation layer and is arranged between the first conductor pillar and the first signal transmission metal; a second rewiring layer disposed between the second conductor pillar and the second signal transmission metal.
Optionally, the radio frequency chip is disposed in the micro coaxial transmission layer and electrically connected between the first signal transmission metal and the second signal transmission metal.
Further, the rf module further includes: the connecting metal layer is arranged between the radio frequency chip and the plastic packaging layer; one end of the connecting metal layer is connected with the first shielding metal, and the other end of the connecting metal layer is connected with the second shielding metal.
Optionally, the radio frequency chip is disposed in the plastic package layer, and is connected to the first signal transmission metal through a third redistribution layer and connected to the second signal transmission metal through a fourth redistribution layer.
Optionally, the passivation layer is made of an insulating organic material or an insulating inorganic material.
Optionally, a dielectric layer is filled between the first signal transmission metal and the first shielding metal.
Optionally, the radio frequency chip is any one of a power amplifier, a low noise amplifier, a filter, a duplexer, and a radio frequency switch.
Optionally, the radio frequency module further includes a substrate, and the micro-coaxial transmission layer is formed on the substrate.
According to another alternative embodiment of the present invention, there is provided a radio frequency device, including any one of the radio frequency modules in the foregoing technical solutions.
Through one or more technical schemes of the invention, the invention has the following beneficial effects or advantages:
the invention provides a radio frequency module, which comprises a plurality of radio frequency units; in each radio frequency unit, a radio frequency chip is connected between two micro-coaxial transmission lines, and the micro-coaxial transmission lines have good radio frequency transmission performance and are electrically interconnected through the micro-coaxial transmission lines to realize signal transmission of the radio frequency chip; the radio frequency units are integrated together in a parallel and/or serial mode, a plastic package layer is formed on the micro-coaxial transmission layer, and a planting ball connected with the micro-coaxial signal line is formed in the plastic package layer, so that various integrated radio frequency chips are obtained, and the multifunctional radio frequency module is provided. The radio frequency module provided by the invention effectively integrates radio frequency chips with various different functions, and the radio frequency module has a standard packaging form and is convenient to use directly.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 shows a schematic structural diagram of a radio frequency unit according to an embodiment of the present invention;
FIG. 2 shows a schematic diagram of a micro-coaxial transmission layer according to one embodiment of the invention;
FIG. 3 shows a cross-sectional view of AA in FIG. 2, in accordance with the present invention;
FIG. 4A shows a schematic diagram of spin coating a dielectric material on a substrate according to one embodiment of the invention;
FIG. 4B shows a schematic diagram of depositing a first layer of metal according to one embodiment of the invention;
FIG. 4C shows a schematic diagram of depositing a second layer of metal according to one embodiment of the invention;
FIG. 4D shows a schematic diagram of depositing a third layer of metal according to one embodiment of the invention;
FIG. 4E shows a schematic diagram of depositing a fourth layer of metal according to one embodiment of the invention;
FIG. 5A shows a schematic diagram of etching an RF chip mounting location on a micro-coaxial transmission layer, in accordance with one embodiment of the present invention;
FIG. 5B shows a schematic diagram of the micro-coaxial transmission layer after the RF chip is mounted, in accordance with one embodiment of the present invention;
FIG. 5C shows a schematic diagram of the formation of a passivation layer on a micro-coaxial transmission layer according to one embodiment of the invention;
FIG. 5D shows a schematic diagram of a rewiring on a passivation layer according to one embodiment of the present invention;
FIG. 5E shows a schematic diagram of forming copper pillars on a redistribution layer, in accordance with one embodiment of the present invention;
fig. 5F shows a schematic diagram of plastic-molding a radio frequency unit according to an embodiment of the invention;
fig. 6 shows a schematic diagram of providing a metal connection layer in a radio frequency unit according to an embodiment of the invention;
FIG. 7 shows a schematic diagram of a radio frequency unit with a chip flip-chip over a micro-coax transport layer according to another embodiment of the invention;
FIG. 8 is a diagram illustrating an exemplary application of a RF module according to another embodiment of the invention;
description of reference numerals:
1. a micro-coaxial transmission layer; 11. a first micro-coaxial transmission line; 111. a first signal transmission metal; 112. a first shielding metal; 12. a second micro-coaxial transmission line; 121. a second signal transmission metal; 122. a second shielding metal; 13. a dielectric layer; 2. a radio frequency chip; 3. a plastic packaging layer; 31. first ball planting; 32. second ball planting; 33. a first conductor pillar; 34. a second conductor pillar; 4. a passivation layer; 41. a first rewiring layer; 42. a second rewiring layer; 43. a third triple wiring layer; 44. a fourth rewiring layer; 5. connecting the metal layers; 6. a substrate.
Detailed Description
In order to make the present application more clearly understood by those skilled in the art to which the present application pertains, the following detailed description of the present application is made with reference to the accompanying drawings by way of specific embodiments. Throughout the specification, unless otherwise specifically noted, terms used herein should be understood as having meanings as commonly used in the art. Accordingly, unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. If there is a conflict, the present specification will control. Unless otherwise specifically stated, various apparatuses and the like used in the present invention are either commercially available or can be prepared by existing methods.
Further research shows that the use of the micro-coaxial structure is a good solution in consideration of signal transmission of various radio frequency chips, but the hollow structure of the micro-coaxial structure is not beneficial to subsequent integration with other radio frequency devices, and inconvenience is brought to subsequent packaging; in addition, in some related technologies of micro-coaxial and other radio frequency chip integration, the packaging method adopted by the radio frequency module is not a common packaging method for semiconductor technology of large-scale mass production, which also brings obstacles for subsequent use.
In order to solve the technical problem of difficult integrated packaging of various radio frequency chips at present, the invention provides a radio frequency module, which comprises a main body structure as follows:
n radio frequency units which are mutually connected in series and/or in parallel; wherein each of the radio frequency units includes:
a micro-coaxial transmission layer; the micro-coaxial cable comprises a first micro-coaxial transmission line and a second micro-coaxial transmission line, wherein the first micro-coaxial transmission line comprises a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line comprises a second signal transmission metal and a second shielding metal;
a radio frequency chip electrically connected between the first signal transmission metal and the second signal transmission metal;
the plastic packaging layer is arranged on the micro coaxial transmission layer in a covering mode; the plastic packaging layer is provided with a first planting ball which is connected to the first signal transmission metal through a first conductor column; and a second ball implant connected to the second signal transmission metal through a second conductive post.
The integration principle of the radio frequency module is as follows: connecting a radio frequency chip between two micro-coaxial transmission lines in each radio frequency unit, and electrically interconnecting through the micro-coaxial transmission lines by utilizing the good radio frequency transmission performance of the micro-coaxial transmission lines to realize the signal transmission of the radio frequency chip; the radio frequency units are integrated together in a parallel and/or serial mode, a plastic package layer (Mold) is formed on the micro coaxial transmission layer, and a ball mounting (bumping) connected with the micro coaxial signal line is formed in the plastic package layer, so that various integrated radio frequency chips and the multifunctional radio frequency module are obtained. The radio frequency module provided by the invention effectively integrates radio frequency chips with various different functions, has a standard packaging form, namely Fan-in (Fan-in) packaging based on Wafer Level Packaging (WLP) technology, and is convenient to use directly.
The radio frequency module provided by the invention can be provided with two different radio frequency chip mounting modes, wherein one mode is to flip the radio frequency chip at the micro-coaxial transmission line, the other mode is to flip the radio frequency chip at the plastic packaging layer, and the radio frequency chip mounting modes are explained respectively.
In an optional embodiment, the radio frequency module comprises a plurality of radio frequency units connected in series and/or in parallel;
as shown in fig. 1, each of the radio frequency units includes:
a micro-coaxial transmission layer 1 formed on a substrate 6; the micro-coaxial cable comprises a first micro-coaxial transmission line 11 and a second micro-coaxial transmission line 12, wherein the first micro-coaxial transmission line 11 comprises a first signal transmission metal 111 and a first shielding metal 112; the second micro-coaxial transmission line 12 comprises a second signal transmission metal 121 and a second shielding metal 122;
the radio frequency chip 2 is arranged in the micro coaxial transmission layer 1 and is electrically connected between the first signal transmission metal 111 and the second signal transmission metal 121;
the passivation layer 4 is arranged on the micro coaxial transmission layer 1; a first rewiring layer 41 connected between the first conductor post 33 and the first signal transmission metal 111 is provided in the passivation layer 4; a second rewiring layer 42 connected between the second conductor post 34 and the second signal transmission metal 121;
the plastic packaging layer 3 is arranged on the passivation layer 4 in a covering mode; wherein, the plastic package layer 3 is provided with a first ball 31 connected to the first conductor pillar 33; and a second ball 32 connected to the second conductive pillar 34.
It should be noted that, in addition to the redistribution layer, the conductor post, and the ball attach at the signal transmission metal, the corresponding redistribution layer, the conductor post, and the ball attach may also be provided at the shield metal. The signal transmission metal or the shielding metal is led out through the rewiring layer (the black area in fig. 1), so that the connection mode of the radio frequency module can be adjusted more flexibly. The conductor pillar may be a good conductor pillar such as a copper pillar or a silver pillar. In addition, the rf chip 2 is also electrically connected between the first shielding metal 112 and the second shielding metal 122 through a pin (not shown in fig. 1).
The above structure will be further explained below:
fig. 2 and 3 show schematic diagrams of the micro-coaxial transmission line in the present embodiment. As shown in fig. 3, the micro-coaxial cable mainly includes a shield metal at the periphery and a signal transmission metal at the center. With conventional micro-coaxial transmission lines: the shielding metal is different from the shielding metal in the hollow structure, and the micro-coaxial transmission layer 1 of the embodiment is filled with dielectric layers 13 between the shielding metal and the signal transmission metal, between the two micro-coaxial transmission lines, and between the micro-coaxial transmission line and the radio frequency chip. The dielectric layer 13 is reserved for forming the passivation layer 4, the rewiring and the ball-planting structure on the micro-coaxial transmission layer 1 of the plurality of radio frequency units conveniently, so that the radio frequency module integrating various radio frequency chips is prepared. Dielectric layer 13 may be formed using a low dielectric loss material including, but not limited to, organic materials that can be photo-etched, such as benzocyclobutene (BCB), epoxy (e.g., SU-8), Polyimide (PI), etc.
Taking BCB as an example, fig. 4A to 4E show the manufacturing process of micro-coaxial transmission line:
1) spin coating a dielectric material on a substrate: benzocyclobutene (BCB);
2) after spin coating, exposing and developing to expose the metal filled region (as shown in fig. 4A);
3) filling metal, wherein the metal material includes but is not limited to copper, gold, aluminum, etc., and then polishing the surface by chemical mechanical polishing (as shown in fig. 4B);
4) depositing and patterning a second metal layer by the same method (as shown in FIG. 4C);
5) using the same method, a third layer metal (as shown in fig. 4D), a fourth layer metal (as shown in fig. 4E), and a fifth layer metal (as shown in fig. 3) are sequentially deposited and patterned.
The structure is five-layer coaxial, more layers of metal can be deposited according to actual requirements or process capacity, and the peripheral shielding layer metal and the intermediate signal transmission metal can be manufactured on any layer according to actual conditions.
As shown in fig. 3, an interface region is disposed between the two micro-coaxial transmission lines, and the interface region is used for connecting the rf chip 2. The signal transmission metal of the micro-coaxial transmission line in the interface area extends downwards and extends out, and the shielding metal also extends downwards at the same time and is used for covering the signal transmission metal in the interface area, so that the signal loss in the interface area can be reduced.
Each radio frequency unit can install any one radio frequency chip 2 in the micro-coaxial transmission layer 1, the radio frequency chips 2 include but not limited to Power Amplifiers (PA), Low Noise Amplifiers (LNA), filters, duplexers, radio frequency switches and the like, and each radio frequency chip 2 transmits signals through micro-coaxial transmission lines.
During integration, the rf module may adopt a Fan-in (Fan-in) package in a Wafer Level Package (WLP), which is as follows:
1) preparing a micro-coaxial transmission layer 1 on a substrate 6, and etching a region capable of accommodating other radio frequency chips 2 on the micro-coaxial transmission layer 1 (as shown in fig. 5A); the substrate 6 may be a silicon substrate;
2) connecting a radio frequency chip 2 (such as PA) with a micro coaxial structure in a flip-chip manner (as shown in FIG. 5B), wherein the connection manner can be selected according to different chip characteristics;
3) depositing a passivation layer 4 on the micro-coaxial transmission layer 1, and etching away part of the passivation material by wet etching or dry etching to expose the micro-coaxial metal (as shown in fig. 5C);
the passivation layer 4 includes, but is not limited to, organic materials: benzocyclobutene (BCB), Polyimide (PI), or the like, and then exposing the micro-shaft by exposure and development; the passivation layer 4 can also be inorganic, such as silicon dioxide (SiO)2) Silicon nitride (Si)3N4) Etc.;
4) rewiring (RDL) the exposed micro-coaxial portions to form a first rewiring layer 41 and a second rewiring layer 42, so as to lead out the signal transmission metal of the micro-coaxial transmission line far away from the radio-frequency chip 2 (as shown in fig. 5D); a rewiring layer at the shielding metal is formed synchronously;
5) forming a copper pillar on the rewiring layer by a metal deposition method, as shown in fig. 5E;
6) performing plastic packaging by using epoxy resin to form a plastic packaging layer 3, and polishing to expose the copper pillar, as shown in fig. 5F;
7) forming a bumping or solder ball on the copper pillar by a Ballplace bumping process, as shown in fig. 1; the ball mounting process specifically comprises the following steps: a passivation layer (not shown in fig. 1) is formed on the molding layer, and Under Bump Metallization (UBM) is performed on the passivation layer, and then solder balls are formed at the positions of the metallization.
In view of the integration of a plurality of rf chips 2 on an rf module, which has a high heat density, in some alternative embodiments, in order to increase the heat dissipation capability of the chips, as shown in fig. 6, the rf module further includes a connection metal layer 5 disposed between the rf chip 2 and the molding layer 3; the connecting metal layer 5 has one end connected to the first shielding metal 112 and the other end connected to the second shielding metal 122.
Specifically, the arrangement of the connection metal layer 5 enables the radio frequency chip 2 to have ground connection with a larger area, and the back of the radio frequency chip 2 is electrically connected with the shielding metal of the micro-coaxial transmission line, so that the heat dissipation capability of the radio frequency chip 2 can be improved, the working temperature of the radio frequency module can be reduced, the long-time stable work of the radio frequency chip 2 can be guaranteed,
the method for forming the connecting metal layer 5 is as follows: the passivation layer 4 can be manufactured and patterned before metal deposition, and after the connecting metal layer 5 and the rewiring layer are formed, ball mounting manufacturing and plastic packaging are carried out.
The above embodiments show the implementation of flip-chip mounting on the micro-coaxial connection layer, and in another alternative embodiment, as shown in fig. 7, there is provided a radio frequency module, including a plurality of radio frequency units connected in series and/or in parallel; as shown in fig. 1, each of the radio frequency units includes:
a micro-coaxial transmission layer 1 formed on a substrate 6; the micro-coaxial cable comprises a first micro-coaxial transmission line 11 and a second micro-coaxial transmission line 12, wherein the first micro-coaxial transmission line 11 comprises a first signal transmission metal 111 and a first shielding metal 112; the second micro-coaxial transmission line 12 comprises a second signal transmission metal 121 and a second shielding metal 122;
the passivation layer 4 is arranged on the micro coaxial transmission layer 1; a first redistribution layer 41 is disposed in the passivation layer 4 and connects a first end of the first signal transmission metal 111 and the first conductor pillar 33; a second rewiring layer 42 connecting a first end of the second signal transmission metal 121 and the second conductor post 34;
the plastic packaging layer 3 is arranged on the passivation layer 4 in a covering mode; wherein, the plastic package layer 3 is provided with a first ball 31 connected to the first conductor pillar 33; a second ball 32 connected to the second conductive pillar 34;
and the radio frequency chip 2 is arranged in the plastic package layer 3, connected with the second end of the first signal transmission metal 111 through a third repeated wiring layer 43, and connected with the second end of the second signal transmission metal 121 through a fourth repeated wiring layer 44.
Similarly, in addition to the redistribution layer, the conductor pillar and the ball-planting at the signal transmission metal, the corresponding redistribution layer, the conductor pillar and the ball-planting at the shielding metal can be also provided. The signal transmission metal or the shielding metal is led out through the rewiring layer, so that the connection mode of the radio frequency module can be adjusted more flexibly. The conductor pillar may be a good conductor pillar such as a copper pillar or a silver pillar. In addition, the rf chip 2 is electrically connected to the first shielding metal 112 and the second shielding metal 122 (not shown in fig. 7) through pins, respectively.
In order to realize the rf module of this embodiment, the signal transmission metal of the micro-coaxial transmission line needs to be adjusted. As shown in fig. 7, the first signal transmission metal 111 and the second signal transmission metal 121 extend up to the passivation layer 4 at the interface area, where the passivation layer 4 is opened, the first signal transmission metal 111 is led out through the third rewiring layer 43, and the second signal transmission metal 121 is led out through the fourth rewiring layer 44 to be connected to the radio frequency chip 2.
The preparation method of the radio frequency module provided by the embodiment comprises the following steps:
1) preparing a micro-coaxial transmission layer 1 on a substrate 6, wherein the substrate 6 can be a silicon substrate;
2) preparing a passivation layer 4 on the micro coaxial transmission layer 1, and forming a third rewiring layer 43 connecting the first signal transmission metal 111, a fourth rewiring layer 44 connecting the second signal transmission metal 121 on the passivation layer 4 at the interface region; forming a first rewiring layer 41 connecting the first signal transmission metal 111, a second rewiring layer 42 connecting the second signal transmission metal 121 on the passivation layer 4 at a position far from the interface area; a rewiring layer connected with the shielding metal is also synchronously formed;
3) connecting the radio frequency chip 2 with the third rewiring layer 43 and the fourth rewiring layer 44 in a flip-chip manner;
4) forming copper columns on all the heavy wiring layers by a metal deposition method;
5) depositing epoxy resin on the passivation layer 4 for plastic packaging to form a plastic packaging layer 3, and polishing to expose all copper columns;
6) solder balls or solder balls are formed on all the copper pillars.
Based on the inventive concept of the foregoing embodiments, in yet another alternative embodiment, a radio frequency device is provided, which includes the radio frequency module of the foregoing embodiments.
Fig. 8 shows an exemplary structure of a radio frequency device using the radio frequency module provided by the present invention, and the radio frequency device of fig. 8 uses various radio frequency chips, such as a switch, a filter, a duplexer, a power amplifier PA, and a low noise amplifier LNA. Each radio frequency chip is packaged in one radio frequency unit, and a plurality of radio frequency units are packaged together in a series-parallel connection mode to form the multifunctional radio frequency module.
Through one or more embodiments of the present invention, the present invention has the following advantageous effects or advantages:
the invention provides a radio frequency module, which comprises a plurality of radio frequency units; in each radio frequency unit, a radio frequency chip is connected between two micro-coaxial transmission lines, and the micro-coaxial transmission lines have good radio frequency transmission performance and are electrically interconnected through the micro-coaxial transmission lines to realize signal transmission of the radio frequency chip; the radio frequency units are integrated together in a parallel and/or serial mode, a plastic package layer is formed on the micro-coaxial transmission layer, and a planting ball connected with the micro-coaxial signal line is formed in the plastic package layer, so that various integrated radio frequency chips are obtained, and the multifunctional radio frequency module is provided. The radio frequency module provided by the invention effectively integrates radio frequency chips with various different functions, and the radio frequency module has a standard packaging form and is convenient to use directly.
While the preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.

Claims (10)

1. A radio frequency module, comprising: n radio frequency units which are mutually connected in series and/or in parallel;
each of the radio frequency units includes:
a micro-coaxial transmission layer; the micro-coaxial cable comprises a first micro-coaxial transmission line and a second micro-coaxial transmission line, wherein the first micro-coaxial transmission line comprises a first signal transmission metal and a first shielding metal; the second micro-coaxial transmission line comprises a second signal transmission metal and a second shielding metal;
a radio frequency chip electrically connected between the first signal transmission metal and the second signal transmission metal;
the plastic packaging layer is arranged on the micro coaxial transmission layer in a covering mode; the plastic packaging layer is provided with a first planting ball which is connected to the first signal transmission metal through a first conductor column; and a second ball implant connected to the second signal transmission metal through a second conductive post.
2. The radio frequency module of claim 1, further comprising a passivation layer disposed between the micro-coaxial transmission layer and the molding layer;
a first rewiring layer is arranged in the passivation layer and is arranged between the first conductor pillar and the first signal transmission metal; a second rewiring layer disposed between the second conductor pillar and the second signal transmission metal.
3. The radio frequency module of claim 2, wherein the radio frequency chip is disposed within the micro-coaxial transmission layer and electrically connected between the first signal transmission metal and the second signal transmission metal.
4. The radio frequency module of claim 3, further comprising: the connecting metal layer is arranged between the radio frequency chip and the plastic packaging layer; one end of the connecting metal layer is connected with the first shielding metal, and the other end of the connecting metal layer is connected with the second shielding metal.
5. The radio frequency module of claim 2, wherein the radio frequency chip is disposed within the molding layer and connected to the first signal transmission metal through a third redistribution layer and the second signal transmission metal through a fourth redistribution layer.
6. The RF module of claim 2, wherein the passivation layer is made of an insulating organic material or an insulating inorganic material.
7. The radio frequency module of claim 1, wherein a dielectric layer is filled between the first signal transmission metal and the first shielding metal.
8. The radio frequency module of claim 1, wherein the radio frequency chip is any one of a power amplifier, a low noise amplifier, a filter, a duplexer, and a radio frequency switch.
9. The radio frequency module of claim 1, further comprising a substrate, the micro-coaxial transmission layer being formed on the substrate.
10. A radio frequency device comprising the radio frequency module according to any one of claims 1 to 9.
CN202111453283.1A 2021-11-30 2021-11-30 Radio frequency module and radio frequency device Pending CN114171498A (en)

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CN202111453283.1A CN114171498A (en) 2021-11-30 2021-11-30 Radio frequency module and radio frequency device

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