CN114166343A - High-performance ambient light proximity optical sensor chip - Google Patents
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
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Abstract
The invention provides a high-performance ambient light proximity optical sensor chip which is composed of a first photodiode (1), a second photodiode (2), a single photon avalanche photodiode (3), a first transimpedance amplifier (41), a second transimpedance amplifier (42), a differential amplifier (5), a quenching circuit array (6), a switch array (7), a multi-input AND gate (8), a time-to-digital converter (9), pulse laser (10) and a bias voltage module (11). The invention can be used for detecting the ambient light intensity and the approaching light, and can be widely applied to the field of electronic mobile devices such as smart phones and smart tablets.
Description
Technical Field
The invention relates to a high-performance ambient light proximity optical sensor chip which can be applied to the field of electronic mobile devices such as smart phones and tablet computers. Belongs to the field of photoelectric technology.
Background
As a large number of mobile electronic devices enter our lives, more and more mobile electronic devices have light sensors integrated therein in pursuit of a better user experience. Optical sensors have been successfully introduced into our daily lives from the initial areas of research, industrial and medical applications.
The ambient light sensor is developed based on the principle of semiconductor photoelectric effect, and can be used for detecting the intensity of ambient light and detecting the brightness of the ambient light to adjust the screen brightness in the mobile electronic device. The approach light sensor measures approach distance by using a flight time method, for example, in a use scene of a smart phone, when a user answers or makes a call, the smart phone is close to the head, the approach light sensor can measure the distance between the approach light sensor and the head and then control the screen backlight to be turned off, and the backlight is turned on again when the approach light sensor is taken away, so that the user can operate the smart phone more conveniently, the electric quantity is saved, and mistaken touch is prevented. The integration requirements for various sensors in mobile electronic devices are continuously increased, and the traditional ambient light and proximity light sensors are separated devices, which obviously cannot meet the current high integration requirements, so that the ambient light and proximity light sensors need to be further miniaturized and integrated.
In order to solve the problem, the invention discloses a high-performance ambient light proximity optical sensor chip which can be applied to the field of mobile devices such as smart phones and tablet computers. The system integrates a first photodiode for ambient light detection and a single photon avalanche photodiode for proximity light detection on the same chip, while integrating a second photodiode covered with metal on the chip for dark noise reduction of the first photodiode. In order to avoid the influence of the ambient light change on the near light detection, the chip can monitor the magnitude of the current output by the first photodiode, and program the pulse laser intensity, the number of single-photon synchronous access time-to-digital converters and the bias voltage intensity of the single-photon avalanche photodiode, so as to prevent the influence of the ambient light change on the near light detection.
Disclosure of Invention
The invention aims to provide a high-performance ambient light proximity optical sensor chip which can be used in the field of electronic mobile devices such as smart phones and tablet computers.
A high-performance ambient light proximity optical sensor chip is composed of a first photodiode (1), a second photodiode (2), a single photon avalanche photodiode (3), a first transimpedance amplifier (41), a second transimpedance amplifier (42), a differential amplifier (5), a quenching circuit array (6), a switch array (7), a multi-input AND gate (8), a time-to-digital converter (9), pulse laser (10) and a bias voltage module (11).
The invention is realized by the following steps: the chip is characterized in that a first photodiode (1) is positioned in the center of the chip, and a second photodiode (2) and a single photon avalanche photodiode (3) surround the first photodiode (1); the bias voltage module (11) provides bias voltages required by operation for the first photodiode (1), the second photodiode (2) and the single photon avalanche photodiode (3); the output of the first photodiode (1) is connected with the input of a first transimpedance amplifier (41), and the output of the second photodiode (2) is connected with the input of a second transimpedance amplifier (42); the output of the first transimpedance amplifier (41) is connected to the non-inverting input of the differential amplifier (5), the output of the second transimpedance amplifier (42) is connected to the inverting input of the differential amplifier (5), the differential amplifier (5) amplifies the difference between the output voltage of the first transimpedance amplifier (41) and the output voltage of the second transimpedance amplifier (42) into a voltage signal, and the voltage signal is used for controlling the switch array (7), the intensity of the output light intensity of the pulse laser (10) and the intensity of the output voltage of the bias voltage module; the chip is provided with a plurality of single photon avalanche photodiodes (3), the output of each single photon avalanche photodiode is connected with the input of a corresponding quenching circuit in a quenching circuit array (6), the output of the quenching circuit array (6) is connected with the output of a switch array (7), the input of the switch array (7) is connected with the input of a multi-input AND gate (8), the output of the multi-input AND gate (8) is connected with the start end of a time-to-digital converter (9), and the synchronous pulse output of pulse laser (10) is connected with the stop end of the time-to-digital converter (9).
The first photodiode (1) is used for receiving ambient light and realizing conversion from ambient light intensity to photocurrent intensity, a photosensitive surface of the second photodiode (2) is covered by metal so that the ambient light cannot be received, the output current of the first photodiode (1) comprises photocurrent and dark current, and the output current of the second photodiode (2) only comprises the dark current; the first photodiode (1) is trans-impedance amplified by a first trans-impedance amplifier (41), and the second photodiode (2) is trans-impedance amplified by a second trans-impedance amplifier (42).
The ratio of the transimpedance gain of the first transimpedance amplifier (41) to the transimpedance gain of the second transimpedance amplifier (42) is equal to the ratio of the photosensitive area of the first photodiode (1) to the photosensitive area of the second photodiode (2); the first transimpedance amplifier (41) amplifies the photocurrent and the dark current output by the first photodiode (1) into voltage signals, and the second transimpedance amplifier (42) amplifies the dark current signals output by the second photodiode (2) into voltage signals; the voltage output of the first transimpedance amplifier (41) is connected to the non-inverting input end of the differential amplifier (5), the voltage output of the second transimpedance amplifier (42) is connected to the inverting input end of the differential amplifier (5), and the output voltage of the differential amplifier (5) is only related to the intensity of ambient light received by the first photodiode (1).
The bias voltage module (11) provides reverse bias voltage required by working for the first photodiode (1), the second photodiode (2) and the single photon avalanche photodiode (3); the bias voltage module (11) is controlled by the output voltage of the differential amplifier (5), and when the output voltage of the differential amplifier (5) is larger, the bias voltage of the single photon avalanche photodiode (3) needs to be reduced, so that the counting rate of the single photon avalanche photodiode (3) is prevented from being saturated.
A plurality of single photon avalanche photodiodes (3) are arranged in the chip and used for detecting near light, the single photon avalanche photodiodes (3) work in a single photon detection mode, and incident photons can cause the single photon avalanche photodiodes (3) to output avalanche events; the number of quenching circuits of the quenching circuits in the quenching circuit array (6) is consistent with that of single photon avalanche photodiodes (3) integrated in a chip, the output of each single photon avalanche photodiode (3) is connected with the input of the corresponding quenching circuit in the quenching circuit array (6), and the quenching circuits are used for quenching and resetting an output avalanche event of the single photon avalanche photodiodes (3) and outputting a standard transistor-transistor logic level pulse signal.
The number of the switches in the switch array (7) is the same as that of the quenching circuits in the quenching circuit array (6), and the output of each quenching circuit is connected with the input of the corresponding switch in the switch array (7); the number of input ports of the multi-input AND gate (8) is consistent with that of switches in the switch array (7), and the output of each switch is connected with the corresponding input port in the multi-input AND gate (8); the state of each switch in the switch array (7) is controlled by the output voltage of the differential amplifier (5), so that the number of the single photon avalanche photodiodes (3) synchronously connected to the multi-input AND gate (8) is controlled; when the ambient light intensity is larger, the differential amplifier (5) outputs larger voltage, and a larger number of single photon avalanche photodiodes (3) are synchronously connected to the multi-input AND gate (8) to eliminate random noise caused by the ambient light.
The pulse laser (10) is used for detecting near light, the pulse laser (10) emits pulse laser and simultaneously outputs synchronous voltage pulse signals to a start end of a time-to-digital converter (9), the pulse laser is reflected by a detected object and enters the surface of a single photon avalanche photodiode (3), the single photon avalanche photodiode (3) outputs avalanche events to complete photoelectric conversion, a quenching circuit array (6) completes quenching and resetting of the avalanche events and outputs standard transistor-transistor logic level pulse signals to be input to a multi-input AND gate (8) through a switch array (7), and the multi-input AND gate (8) outputs pulse signals to a stop end of the time-to-digital converter (9); when a signal is input at the start end of the time-to-digital converter (9), the time-to-digital converter (9) starts to time, and when a signal is input at the stop end, the time is stopped; the time from emission to return of the pulse laser is recorded, and the space distance between the pulse laser and the measured object can be obtained by processing the flight time; in addition, the light intensity output by the pulse laser (10) is controlled by the output voltage of the differential amplifier (5), when the ambient light intensity is larger, the output voltage of the differential amplifier (5) is increased, and the pulse laser (10) needs to increase the light intensity to increase the probability of being detected by the single photon avalanche photodiode (3).
Drawings
FIG. 1 is a schematic diagram of a high performance ambient light proximity light sensor chip. The single-photon avalanche photodiode self-adaptive control circuit is composed of a first photodiode (1), a second photodiode (2), a single-photon avalanche photodiode (3), a first transimpedance amplifier (41), a second transimpedance amplifier (42), a differential amplifier (5), a quenching circuit array (6), a switch array (7), a multi-input AND gate (8), a time-to-digital converter (9), pulse laser (10) and a bias voltage module (11).
Fig. 2 is a schematic diagram of an embodiment of a high performance ambient light proximity light sensor chip. The single-photon avalanche photodiode self-adaptive control circuit is composed of a first photodiode (1), a second photodiode (2), a single-photon avalanche photodiode (3), a first transimpedance amplifier (41), a second transimpedance amplifier (42), a differential amplifier (5), a quenching circuit array (6), a switch array (7), a multi-input AND gate (8), a time-to-digital converter (9), pulse laser (10) and a bias voltage module (11).
Fig. 3 shows a process of noise processing of output signals of a quenching circuit connected with a plurality of single photon avalanche photodiodes (3) in a high-performance ambient light proximity optical sensor chip through a multi-input and gate (8).
Detailed Description
The invention is further illustrated below with reference to specific examples.
FIG. 2 shows an embodiment of a high performance ambient light proximity photosensor chip in which a first photodiode (1) is located in the center of the chip, and a second photodiode (2) and 7 single photon avalanche photodiodes (3) are located around the first photodiode (1); the bias voltage module (11) provides bias voltages required by operation for the first photodiode (1), the second photodiode (2) and the single photon avalanche photodiode (3); the output of the first photodiode (1) is connected with the input of a first transimpedance amplifier (41), and the output of the second photodiode (2) is connected with the input of a second transimpedance amplifier (42); the output of the first transimpedance amplifier (41) is connected to the non-inverting input of the differential amplifier (5), the output of the second transimpedance amplifier (42) is connected to the inverting input of the differential amplifier (5), the differential amplifier (5) amplifies the difference between the output voltage of the first transimpedance amplifier (41) and the output voltage of the second transimpedance amplifier (42) into a voltage signal, and the voltage signal is used for controlling the switch array (7), the intensity of the output light intensity of the pulse laser (10) and the intensity of the output voltage of the bias voltage module; the chip is provided with 7 single photon avalanche photodiodes (3), the output of each single photon avalanche photodiode is connected with the input of a corresponding quenching circuit in a quenching circuit array (6), the output of the quenching circuit array (6) is connected with the output of a switch array (7), the input of the switch array (7) is connected with the input of a multi-input AND gate (8), the output of the multi-input AND gate (8) is connected with the strat end of a time-to-digital converter (9), and the synchronous pulse output of pulse laser (10) is connected with the stop end of the time-to-digital converter (9). The first photodiode (1) receives ambient light to realize conversion from ambient light intensity to photocurrent intensity, and the photosensitive surface of the second photodiode (2) is subjected to metal covering treatment to prevent the ambient light from being received, so that the output current of the first photodiode (1) comprises photocurrent and dark current, and the output current of the second photodiode (2) only comprises the dark current. The ratio of the transimpedance gain of the first transimpedance amplifier (41) to the transimpedance gain of the second transimpedance amplifier (42) is equal to the ratio of the photosensitive area of the first photodiode (1) to the photosensitive area of the second photodiode (2). The first transimpedance amplifier (41) amplifies the photocurrent and the dark current output by the first photodiode (1) into voltage signals, and the second transimpedance amplifier (42) amplifies the dark current signals output by the second photodiode (2) into voltage signals; the voltage output of the first transimpedance amplifier (41) is connected to the non-inverting input end of the differential amplifier (5), the voltage output of the second transimpedance amplifier (42) is connected to the inverting input end of the differential amplifier (5), and the output voltage of the differential amplifier (5) is only related to the intensity of ambient light received by the first photodiode (1).
7 single photon avalanche photodiodes (3) in the chip work in a single photon detection mode, and the photoelectric gain of the photodiodes can be controlled by the voltage output by the bias voltage module (11). The outputs of the 7 single photon avalanche photodiodes (3) are all connected to a quenching circuit in a quenching circuit array (6), the output of the quenching circuit is connected to a multi-input AND gate (8) through a switch array (7), and the number of the quenching circuits synchronously connected to the multi-input AND gate (8) can be controlled through the adjustment of switches in the switch array (7).
The pulse laser (10) emits pulse laser and simultaneously outputs a synchronous voltage pulse signal to a start end of a time-to-digital converter (9), the pulse laser is reflected by a measured object and is incident to the surface of a single photon avalanche photodiode (3), the single photon avalanche photodiode (3) outputs an avalanche event to complete photoelectric conversion, a quenching circuit array (6) completes quenching and resetting of the avalanche event and outputs a standard transistor-transistor logic level pulse signal to be input to a multi-input AND gate (8) through a switch array (7), and the multi-input AND gate (8) outputs the pulse signal to a stop end of the time-to-digital converter (9); when a signal is input at the start end of the time-to-digital converter (9), the time-to-digital converter (9) starts to time, and when a signal is input at the stop end, the time is stopped; the time from emission to return of the pulse laser is recorded, and the space distance between the pulse laser and the measured object can be obtained by processing the flight time;
when the ambient light changes, for example, the ambient light changes from dark to light, the voltage output by the differential amplifier (5) is increased, and can be fed back to the electronic mobile device to improve the backlight brightness of the device screen, and the increase of the ambient light intensity can cause the noise of the single photon avalanche photodiode (3) to increase, at the moment, the working voltage of the single photon avalanche photodiode (3) can be properly reduced according to the increase of the output voltage of the differential amplifier (5), and the output light intensity of the pulse laser (10) can be increased. Furthermore, the outputs of more single photon avalanche photodiodes (3) are connected to a multi-input and gate (8) by controlling a switch array (7). As shown in fig. 3, the output of the quenching circuit is processed by the multi-input and gate (8), and the random noise caused by the ambient light is filtered out, leaving only the synchronization pulse caused by the pulsed laser.
Claims (7)
1. A high-performance ambient light proximity optical sensor chip is composed of a first photodiode (1), a second photodiode (2), a single photon avalanche photodiode (3), a first transimpedance amplifier (41), a second transimpedance amplifier (42), a differential amplifier (5), a quenching circuit array (6), a switch array (7), a multi-input AND gate (8), a time-to-digital converter (9), pulse laser (10) and a bias voltage module (11), wherein the first photodiode (1) is located in the center of the chip, and the second photodiode (2) and the single photon avalanche photodiode (3) surround the first photodiode (1); the bias voltage module (11) provides bias voltages required by operation for the first photodiode (1), the second photodiode (2) and the single photon avalanche photodiode (3); the output of the first photodiode (1) is connected with the input of a first transimpedance amplifier (41), and the output of the second photodiode (2) is connected with the input of a second transimpedance amplifier (42); the output of the first transimpedance amplifier (41) is connected to the non-inverting input of the differential amplifier (5), the output of the second transimpedance amplifier (42) is connected to the inverting input of the differential amplifier (5), the differential amplifier (5) amplifies the difference between the output voltage of the first transimpedance amplifier (41) and the output voltage of the second transimpedance amplifier (42) into a voltage signal, and the voltage signal is used for controlling the switch array (7), the intensity of the output light intensity of the pulse laser (10) and the intensity of the output voltage of the bias voltage module; the chip is provided with a plurality of single photon avalanche photodiodes (3), the output of each single photon avalanche photodiode is connected with the input of a corresponding quenching circuit in a quenching circuit array (6), the output of the quenching circuit array (6) is connected with the output of a switch array (7), the input of the switch array (7) is connected with the input of a multi-input AND gate (8), the output of the multi-input AND gate (8) is connected with the strat end of a time-to-digital converter (9), and the synchronous pulse output of pulse laser (10) is connected with the stop end of the time-to-digital converter (9).
2. The high performance ambient light proximity sensor chip of claim 1, wherein: the first photodiode (1) is used for receiving ambient light and realizing conversion from ambient light intensity to photocurrent intensity, a photosensitive surface of the second photodiode (2) is covered by metal so that the ambient light cannot be received, the output current of the first photodiode (1) comprises photocurrent and dark current, and the output current of the second photodiode (2) only comprises the dark current; the first photodiode (1) is trans-impedance amplified by a first trans-impedance amplifier (41), and the second photodiode (2) is trans-impedance amplified by a second trans-impedance amplifier (42).
3. The high performance ambient light proximity sensor chip of claim 1, wherein: the ratio of the transimpedance gain of the first transimpedance amplifier (41) to the transimpedance gain of the second transimpedance amplifier (42) is equal to the ratio of the photosensitive area of the first photodiode (1) to the photosensitive area of the second photodiode (2); the first transimpedance amplifier (41) amplifies the photocurrent and the dark current output by the first photodiode (1) into voltage signals, and the second transimpedance amplifier (42) amplifies the dark current signals output by the second photodiode (2) into voltage signals; the voltage output of the first transimpedance amplifier (41) is connected to the non-inverting input end of the differential amplifier (5), the voltage output of the second transimpedance amplifier (42) is connected to the inverting input end of the differential amplifier (5), and the output voltage of the differential amplifier (5) is only related to the intensity of ambient light received by the first photodiode (1).
4. The high performance ambient light proximity sensor chip of claim 1, wherein: the bias voltage module (11) provides reverse bias voltage required by working for the first photodiode (1), the second photodiode (2) and the single photon avalanche photodiode (3); the bias voltage module (11) is controlled by the output voltage of the differential amplifier (5), and when the output voltage of the differential amplifier (5) is larger, the bias voltage of the single photon avalanche photodiode (3) needs to be reduced, so that the counting rate of the single photon avalanche photodiode (3) is prevented from being saturated.
5. The high performance ambient light proximity sensor chip of claim 1, wherein: a plurality of single photon avalanche photodiodes (3) are arranged in the chip and used for detecting near light, the single photon avalanche photodiodes (3) work in a single photon detection mode, and incident photons can cause the single photon avalanche photodiodes (3) to output avalanche events; the number of quenching circuits of the quenching circuits in the quenching circuit array (6) is consistent with that of single photon avalanche photodiodes (3) integrated in a chip, the output of each single photon avalanche photodiode (3) is connected with the input of the corresponding quenching circuit in the quenching circuit array (6), and the quenching circuits are used for quenching and resetting an output avalanche event of the single photon avalanche photodiodes (3) and outputting a standard transistor-transistor logic level pulse signal.
6. The high performance ambient light proximity sensor chip of claim 1, wherein: the number of the switches in the switch array (7) is the same as that of the quenching circuits in the quenching circuit array (6), and the output of each quenching circuit is connected with the input of the corresponding switch in the switch array (7); the number of input ports of the multi-input AND gate (8) is consistent with that of switches in the switch array (7), and the output of each switch is connected with the corresponding input port in the multi-input AND gate (8); the state of each switch in the switch array (7) is controlled by the output voltage of the differential amplifier (5), so that the number of the single photon avalanche photodiodes (3) synchronously connected to the multi-input AND gate (8) is controlled; when the ambient light intensity is larger, the differential amplifier (5) outputs larger voltage, and a larger number of single photon avalanche photodiodes (3) are synchronously connected to the multi-input AND gate (8) to eliminate random noise caused by the ambient light.
7. The high performance ambient light proximity sensor chip of claim 1, wherein: the pulse laser (10) is used for detecting near light, the pulse laser (10) emits pulse laser and simultaneously outputs synchronous voltage pulse signals to a start end of a time-to-digital converter (9), the pulse laser is reflected by a detected object and enters the surface of a single photon avalanche photodiode (3), the single photon avalanche photodiode (3) outputs avalanche events to complete photoelectric conversion, a quenching circuit array (6) completes quenching and resetting of the avalanche events and outputs standard transistor-transistor logic level pulse signals to be input to a multi-input AND gate (8) through a switch array (7), and the multi-input AND gate (8) outputs pulse signals to a stop end of the time-to-digital converter (9); when a signal is input at the start end of the time-to-digital converter (9), the time-to-digital converter (9) starts to time, and when a signal is input at the stop end, the time is stopped; the time from emission to return of the pulse laser is recorded, and the space distance between the pulse laser and the measured object can be obtained by processing the flight time; in addition, the light intensity output by the pulse laser (10) is controlled by the output voltage of the differential amplifier (5), when the ambient light intensity is larger, the output voltage of the differential amplifier (5) is increased, and the pulse laser (10) needs to increase the light intensity to increase the probability of being detected by the single photon avalanche photodiode (3).
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| CN117528863A (en) * | 2023-11-14 | 2024-02-06 | 广州狮威能源技术有限公司 | Novel intelligent energy-saving lighting control system |
| CN117528863B (en) * | 2023-11-14 | 2024-03-26 | 广州狮威能源技术有限公司 | Novel intelligent energy-saving lighting control system |
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| CN114166343B (en) | 2024-03-12 |
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