CN114163238A - Diamond-silicon carbide composite material, preparation method and electronic equipment - Google Patents
Diamond-silicon carbide composite material, preparation method and electronic equipment Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 101
- 239000002131 composite material Substances 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010432 diamond Substances 0.000 claims abstract description 58
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 58
- 239000000843 powder Substances 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 38
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000002002 slurry Substances 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 21
- 230000008595 infiltration Effects 0.000 claims abstract description 17
- 238000001764 infiltration Methods 0.000 claims abstract description 17
- 238000005238 degreasing Methods 0.000 claims abstract description 15
- 238000005087 graphitization Methods 0.000 claims abstract description 14
- 238000000465 moulding Methods 0.000 claims abstract description 12
- 238000000498 ball milling Methods 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 28
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical group NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 25
- 239000003999 initiator Substances 0.000 claims description 13
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 9
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical group [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 4
- 238000009849 vacuum degassing Methods 0.000 claims description 4
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical group CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 claims description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 3
- 238000005336 cracking Methods 0.000 claims description 3
- 239000011863 silicon-based powder Substances 0.000 abstract description 6
- 239000002245 particle Substances 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000012668 chain scission Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000009768 microwave sintering Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005029 sieve analysis Methods 0.000 description 1
- 238000005475 siliconizing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
According to the diamond-silicon carbide composite material, the preparation method and the electronic equipment provided by the embodiment of the invention, diamond powder, silicon carbide powder and gel are premixed and then are subjected to wet ball milling to prepare slurry, wherein the mass ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90), injecting the slurry into a mold for molding, drying and degreasing to obtain a diamond-silicon carbide prefabricated blank, and pressureless impregnating the prefabricated blank with liquid silicon in a vacuum environment to obtain a compact diamond-silicon carbide sintered body, wherein the silicon is high-purity silicon powder or silicon blocks. While the densified composite material is effectively prepared, the infiltration temperature of the liquid silicon is strictly controlled, and the negative influence caused by graphitization of the diamond is effectively avoided. The composite material has the advantages of high heat conductivity, low expansion, low density, wear resistance and the like, and is an ideal heat management application material.
Description
Technical Field
The invention relates to the field of heat management application materials, in particular to a diamond-silicon carbide composite material, a preparation method and electronic equipment.
Background
In recent years, with the rapid development of large-scale integrated circuits, the chip size of electronic devices is continuously reduced, the traditional electronic packaging materials cannot meet the requirements of modern integrated circuits, and high-performance electronic packaging materials are more and more emphasized. For advanced thermal management materials, the thermal management materials should have the characteristics of higher thermal conductivity, good matching between the thermal expansion coefficient and the chip, suitability for industrial production, low dielectric constant, good mechanical properties, and the like. Diamond is considered an ideal candidate material because of its excellent thermal conductivity and low coefficient of thermal expansion (thermal conductivity 2000W-mK at 300K; coefficient of thermal expansion 0.7X 10-6K-10.3X 10-6K-1). Because the diamond hardness (50-100GPa) is very high, the diamond-doped diamond composite material is difficult to machine, manufacture and form, and can be used for preparing diamond-doped composite materials, such as diamond-metal composite materials, diamond-ceramic composite materials, diamond-resin composite materials and the like. Metal materials typically have a low melting point and a large coefficient of thermal expansion, which limits the use of diamond-reinforced metal matrix composites at high temperatures. In contrast, silicon carbide has a series of excellent properties such as a low thermal expansion coefficient, excellent thermal conductivity, high elastic modulus, high dimensional stability and the like, so that it is applied to many important fields such as high-performance electronic equipment, heat conduction elements, advanced structural devices and the like. Therefore, diamond-silicon carbide composite materials are an ideal material for thermal management applications and have been the focus of research on composite materials, which have the advantages of high thermal conductivity, matched thermal expansion coefficient, low density, wear resistance, corrosion resistance and the like. At present, the preparation process of the diamond-silicon carbide composite material mainly comprises a high-temperature high-pressure sintering method, a liquid infiltration method, a vacuum gas phase reaction infiltration method, a microwave sintering method and a precursor conversion method. At present, the problem of graphitization of diamond frequently occurs in the preparation process, which leads to the reduction of the comprehensive performance of the composite material, and the process technology for continuously preparing the diamond-silicon carbide composite material with high solid content in near net size is still the key problem.
Disclosure of Invention
In view of the above, the invention provides a diamond-silicon carbide composite material, a preparation method and an electronic device, which can be used for effectively preparing a densified composite material and strictly controlling the infiltration temperature of liquid silicon, thereby effectively avoiding negative effects caused by graphitization of diamond. The diamond-silicon carbide composite material prepared by the method has the characteristics of high compactness, high heat conductivity, low expansion coefficient, low density and the like.
In a first aspect of the present invention, there is provided a method for preparing a diamond-silicon carbide composite material, comprising:
adding diamond powder and silicon carbide powder into a gel premix prepared in advance, wherein the weight ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90);
carrying out wet ball milling on the gel premix to prepare slurry;
injecting the slurry into a mold for molding to obtain a diamond-silicon carbide prefabricated blank;
and carrying out pressureless infiltration on the diamond-silicon carbide prefabricated blank in a vacuum environment to obtain a diamond-silicon carbide sintered body.
In an alternative embodiment, the gel premix is an acrylamide gel system premix, and further includes:
preparing an acrylamide gel system premix liquid which contains acrylamide and methylene bisacrylamide, wherein the acrylamide and the methylene bisacrylamide respectively account for 2-10% and 0.2-1% of the total mass of the powder, and the volume of the powder and the volume of the acrylamide gel system premix liquid are 100% in total.
In an alternative scheme, the step of injecting the slurry into a mold to obtain a diamond-silicon carbide preform body comprises the following steps:
vacuum degassing is carried out on the slurry, a catalyst and an initiator are added into the slurry, the slurry is injected into a mold for molding, and the diamond-silicon carbide prefabricated blank body is obtained after drying
In an optional scheme, the method further comprises the following steps:
and (3) degreasing the diamond-silicon carbide prefabricated blank by using a high-temperature cracking pre-sintering method, wherein the degreasing temperature is controlled to be lower than the graphitization temperature of the diamond, and the degreasing temperature is in the range of 1410-1450 ℃.
In an alternative scheme, the pressureless infiltration of the silicon material into the diamond-silicon carbide preform body in a vacuum environment to obtain a diamond-silicon carbide sintered body comprises the following steps:
and paving a silicon material on the upper surface and/or the lower surface of the diamond-silicon carbide prefabricated blank, carrying out high-temperature pressureless liquid infiltration in a vacuum atmosphere, spontaneously infiltrating the silicon liquid formed by the silicon material into the diamond-silicon carbide prefabricated blank, and forming a silicon carbide thin layer on the surface of the diamond to obtain the diamond-silicon carbide sintered body with the diamond-silicon carbide-silicon interface layer.
In an optional scheme, the method further comprises the following steps:
the acrylamide and the methylene bisacrylamide respectively account for 5 percent and 0.4 percent of the total mass of the powder; adding an acrylamide gel system premix liquid into the silicon carbide powder and the diamond powder according to the mass fraction of 16:84, wherein the catalyst is tetramethylethylenediamine, the initiator is ammonium persulfate, and the catalyst and the initiator respectively account for 0.03-0.09% and 0.3-0.9% of the total volume of the slurry and are added according to a preset flow rate.
In an optional scheme, the silicon carbide powder and the diamond powder are added into the gel premix liquid in a mass fraction of 32: 68.
In an optional scheme, the silicon carbide powder and the diamond powder are added into the gel premix liquid in a mass fraction of 47:53, or;
and adding the silicon carbide powder and the diamond powder into the gel premix liquid according to the mass fraction of 76: 24.
In a second aspect of the present invention, there is provided a diamond-silicon carbide composite material, wherein the diamond-silicon carbide composite material is produced by the production method as described above.
In a third aspect of the present invention, an electronic device is provided, and the heat dissipation material of the electronic device is the diamond-silicon carbide composite material.
The diamond powder, silicon carbide powder and gel are premixed and then subjected to wet ball milling to prepare slurry, wherein the mass ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90), injecting the slurry into a mold for molding, drying and degreasing to obtain a diamond-silicon carbide prefabricated blank, and pressureless impregnating the prefabricated blank with liquid silicon in a vacuum environment to obtain a compact diamond-silicon carbide sintered body, wherein the silicon is high-purity silicon powder or silicon blocks. While the densified composite material is effectively prepared, the infiltration temperature of the liquid silicon is strictly controlled, and the negative influence caused by graphitization of the diamond is effectively avoided. The composite material has the advantages of high heat conductivity, low expansion, low density, wear resistance and the like, is an ideal heat management application material, and is a hotspot of composite material research.
Drawings
FIG. 1 is a schematic flow diagram of a diamond-silicon carbide composite material provided in an embodiment of the present invention;
FIG. 2 is a metallographic micrograph of a diamond-silicon carbide composite according to an embodiment of the present invention;
FIG. 3 is an SEM image of a diamond-silicon carbide composite provided in an embodiment of the invention;
FIG. 4 is an SEM image of another diamond-silicon carbide composite provided in an embodiment of the invention;
figure 5 is an XRD pattern of a diamond-silicon carbide composite provided in an embodiment of the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure, and it is obvious that the described embodiments are only a part of the embodiments of the present disclosure, but not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1, an embodiment of the present invention provides a method for preparing a diamond-silicon carbide composite material, including:
s101, adding diamond powder and silicon carbide powder into a prepared gel premix, wherein the weight ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90).
The diamond is selected from commercially available diamond, a gel premix is prepared in advance, the premix can be acrylamide gel system premix, a certain amount of acrylamide and methylene bisacrylamide are added into the acrylamide gel system premix during preparation, the acrylamide and the methylene bisacrylamide respectively account for 2-10% and 0.2-1% of the total mass of the powder, the powder comprises diamond powder and silicon carbide powder, the volume of the powder and the volume of the acrylamide gel system premix account for 100%, and the weight ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90), the specific value can be flexibly selected according to the weight ratio of the required diamond, and the specific value is not limited.
Optionally, the diamond is subjected to surface purification treatment by using at least one solvent of absolute ethyl alcohol or acetone: the diamond is placed in a solvent for soaking, and impurities such as oil stains and the like on the surface of the diamond are removed through ultrasonic cleaning.
And S102, carrying out wet ball milling on the gel premix to prepare slurry.
The gel premix mixed with the diamond powder and the silicon carbide powder is subjected to wet ball milling for a preset time, wherein the preset time can be set to 24 hours, and slurry is prepared after the wet ball milling is finished.
S103, injecting the slurry into a mold for molding to obtain a diamond-silicon carbide prefabricated blank.
The slurry is injected into a mold for drying and molding, the mold can be manufactured in advance according to needs, and in the process of nodular casting, certain air is easily mixed in the slurry, so that the slurry can be subjected to vacuum degassing operation in advance, the slurry can be vacuumized for 30 minutes, a catalyst and an initiator can be added for better molding, the initiator is also called a free radical initiator, and refers to a compound which is easily decomposed into free radicals (namely primary free radicals) by heating, the compound can be used for initiating free radical polymerization and copolymerization of vinyl and diene monomers, and can also be used for crosslinking curing and macromolecular crosslinking reaction of unsaturated polyester, the slurry added with the catalyst and the initiator is injected into the mold, and a diamond-silicon carbide prefabricated blank body is obtained after drying and molding.
And S104, carrying out pressureless infiltration on the diamond-silicon carbide prefabricated blank in a vacuum environment to obtain a diamond-silicon carbide sintered body.
Laying a silicon material on the upper surface and/or the lower surface of the diamond-silicon carbide prefabricated blank, wherein the silicon material can be a high-purity silicon block or silicon powder, carrying out high-temperature pressureless liquid infiltration in a vacuum atmosphere, wherein the high temperature is lower than the graphitization temperature of the diamond in order to avoid graphitization of the diamond, experimental tests show that the graphitization starting temperature range is 1450-1500 ℃ in vacuum, the infiltration temperature, namely the high temperature, is controlled within the range of 1410-1450 ℃, silicon liquid formed by the silicon material spontaneously infiltrates into the diamond-silicon carbide prefabricated blank, and a silicon carbide thin layer is formed on the surface of the diamond, so that the diamond-silicon carbide sintered body with a diamond-silicon carbide-silicon interface layer is obtained.
Optionally, in order to remove organic components mixed in the diamond-silicon carbide preform, the diamond-silicon carbide preform may be degreased, where a pyrolysis pre-sintering method is adopted, pyrolysis is a decomposition process in which hydrocarbons are subjected to chain scission or dehydrogenation reaction at a high temperature of more than 750 ℃ to generate low molecular hydrocarbons, and the degreasing temperature is controlled below the graphitization temperature of diamond, that is, the degreasing temperature should also be controlled within a range of 1410-1450 ℃.
Fig. 2 is a metallographic microscopic view of the diamond-silicon carbide composite material prepared by the preparation method in the embodiment of the present invention, and the metallographic science mainly refers to a branch of the material discipline for analyzing, researching and characterizing the material microstructure, the macrostructure, the fracture structure, and the like by means of an optical (metallographic) microscope, a stereoscopic microscope, and the like, and includes not only imaging of the material microstructure and qualitative and quantitative characterization thereof, but also necessary sample preparation, preparation and sampling methods. Which primarily reflects and characterizes the phase and texture composition of the constituent materials, the grains (also including possible sub-crystals), non-metallic inclusions, and even the number, morphology, size, distribution, orientation, spatial arrangement of certain crystal defects (e.g., dislocations), etc.
Fig. 3 and 4 are SEM images of the diamond-silicon carbide composite material prepared by the preparation method in the example of the present invention, and a Scanning Electron Microscope (SEM) is an observation means between a transmission Electron Microscope and an optical Microscope. The method utilizes a focused narrow high-energy electron beam to scan a sample, excites various physical information through the interaction between a light beam and a substance, and collects, amplifies and re-images the information to achieve the purpose of characterizing the microscopic morphology of the substance. The resolution of the novel scanning electron microscope can reach 1 nm; the magnification can reach 30 ten thousand times and can be continuously adjusted; and the depth of field is large, the visual field is large, and the imaging stereo effect is good. In addition, the combination of the scanning electron microscope and other analytical instruments can realize the analysis of the composition of the micro-area of the substance while observing the micro-morphology. The scanning electron microscope has wide application in the research of rock soil, graphite, ceramic, nanometer material, etc. Therefore, scanning electron microscopes play a significant role in the field of scientific research.
FIG. 5 is an XRD pattern of a diamond-silicon carbide composite material prepared by a preparation method in an embodiment of the present invention, and when a monochromatic X-ray is incident on a crystal according to the basic principle of X-ray Diffraction (XRD), since the crystal is composed of a unit cell in which atoms are regularly arranged, and the distance between the regularly arranged atoms is the same order of magnitude as the wavelength of the incident X-ray, X-Rays scattered by different atoms interfere with each other to generate strong X-ray Diffraction in some specific directions, and the orientation and intensity of the Diffraction line in spatial distribution are closely related to the crystal structure.
The preparation method provided by the embodiment of the invention comprises the following steps of mixing diamond powder, silicon carbide powder and gel at night, and then carrying out wet ball milling to prepare slurry, wherein the mass ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90), injecting the slurry into a mold for molding, drying and degreasing to obtain a diamond-silicon carbide prefabricated blank, and pressureless impregnating the prefabricated blank with liquid silicon in a vacuum environment to obtain a compact diamond-silicon carbide sintered body, wherein the silicon is high-purity silicon powder or silicon blocks. While the densified composite material is effectively prepared, the infiltration temperature of the liquid silicon is strictly controlled, and the negative influence caused by graphitization of the diamond is effectively avoided. The composite material has the advantages of high heat conductivity, low expansion, low density, wear resistance and the like, is an ideal heat management application material, and is a hotspot of composite material research.
Example 2
The embodiment of the invention also provides a preparation method of the second diamond-silicon carbide composite material, which comprises the following steps:
s201, firstly, forming a diamond-silicon carbide preform by adopting an acrylamide gel system, wherein the process flow is as follows:
preparing an acrylamide gel system premix liquid, wherein the premix liquid contains a certain amount of acrylamide, methylene bisacrylamide and other organic chemical reagents, and the acrylamide and the methylene bisacrylamide respectively account for 2-10% and 0.2-1% of the total mass of the powder. Diamond powder and silicon carbide powder with certain grading are respectively added, and the grading is the distribution condition of particles with different levels of aggregate particle sizes and can be determined through a sieve analysis test. (wherein the volume of the powder and the volume of the premixed solution are 100 percent), ball milling is carried out for 24 hours, vacuum degassing is carried out for 30 minutes, a catalyst and an initiator are added, slurry is injected into a mould, and a diamond-silicon carbide prefabricated blank body is obtained after drying;
s202, carrying out degreasing treatment on the diamond-silicon carbide prefabricated body, aiming at removing organic components added in the blank body due to the mixed material, and adopting a high-temperature cracking and presintering method, wherein the degreasing temperature is controlled below the graphitization temperature of the diamond;
s203, paving a certain amount of high-purity silicon blocks or silicon powder on or under the diamond-silicon carbide blank, carrying out non-pressure liquid infiltration at high temperature in a vacuum atmosphere, and spontaneously infiltrating silicon liquid into the diamond-silicon carbide prefabricated part to form a silicon carbide thin layer on the surface of the diamond so as to obtain a stable diamond-silicon carbide-silicon interface layer;
s204, cleaning the residual silicon on the surface of the diamond-silicon carbide composite material to obtain the diamond-silicon carbide composite material with a certain size.
Example 3
The embodiment of the invention also provides a preparation method of a third diamond-silicon carbide composite material, which comprises the following steps:
s301, firstly, adding a certain amount of acrylamide, methylene bisacrylamide and other organic chemical reagents to prepare a gel system premix, wherein the acrylamide and the methylene bisacrylamide respectively account for 5% and 0.4% of the total mass of the powder, adding silicon carbide powder and diamond powder with different particle sizes into the premix according to the mass fraction of 16:84, the volume of the powder and the volume of the premix being 100%, uniformly stirring, ball-milling for 24 hours, vacuumizing the slurry for 30 minutes, sequentially adding a catalyst tetramethylethylenediamine and an initiator ammonium persulfate, wherein the catalyst and the initiator respectively account for 0.03-0.09% and 0.3-0.9% of the total volume of the slurry, adding the mixture at a certain flow rate to obtain liquid slurry, stirring, injecting the liquid slurry into a mold, and generating gel.
S302, after drying, carrying out degreasing treatment on the diamond-silicon carbide prefabricated blank body, and removing organic components added into the blank body due to mixing, wherein the degreasing temperature is below the graphitization temperature of the diamond.
S303, paving a certain amount of high-purity silicon blocks or silicon powder on or under the diamond-silicon carbide prefabricated blank, slowly heating to 1410-1450 ℃ in a vacuum atmosphere to perform liquid siliconizing, and spontaneously infiltrating silicon liquid into the diamond-silicon carbide prefabricated blank to obtain a compact diamond-silicon carbide composite material;
s304, cleaning the residual silicon on the surface of the diamond-silicon carbide composite material to obtain the diamond-silicon carbide composite material with a certain size, wherein the solid content of diamond is about 10%.
Example 4
The embodiment of the invention also provides a fourth preparation method of the diamond-silicon carbide composite material, which comprises the following steps:
essentially the same as in example 3, except that: adding the silicon carbide powder and the diamond powder with different particle sizes into the premixing liquid according to the mass fraction of 32:68 to finally obtain the diamond-silicon carbide composite material, wherein the solid content of the diamond is about 20 percent, and the details are not repeated here.
Example 5
The embodiment of the invention also provides a fifth preparation method of the diamond-silicon carbide composite material, which comprises the following steps:
essentially the same as in example 3, except that: adding the silicon carbide powder and the diamond powder with different particle sizes into the premixing liquid according to the mass fraction of 47:53 to finally obtain the diamond-silicon carbide composite material, wherein the solid content of the diamond is about 30 percent, and the details are not repeated here.
Example 6
The embodiment of the invention also provides a sixth preparation method of the diamond-silicon carbide composite material, which comprises the following steps:
essentially the same as in example 3, except that: adding the silicon carbide powder and the diamond powder with different particle sizes into the premixing liquid according to the mass fraction of 47:53 to finally obtain the diamond-silicon carbide composite material, wherein the solid content of the diamond is about 30 percent, and the details are not repeated here.
The embodiment of the invention also provides a diamond-silicon carbide composite material, and the diamond-silicon carbide composite material is prepared by adopting the preparation method.
According to the diamond-silicon carbide composite material provided by the embodiment of the invention, the infiltration temperature of liquid silicon is strictly controlled while the densified composite material is effectively prepared, so that the negative influence caused by graphitization of diamond is effectively avoided. The composite material has the advantages of high heat conductivity, low expansion, low density, wear resistance and the like, is an ideal heat management application material, and is a hotspot of composite material research.
The embodiment of the invention also provides electronic equipment, and the heat dissipation material of the electronic equipment is the diamond-silicon carbide composite material.
The diamond-silicon carbide composite material has good heat dissipation performance, and can keep good stability in the using process. The material is applied to electronic equipment as a heat dissipation material, and meets the heat dissipation requirement of the electronic equipment.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above detailed description should not be construed as limiting the scope of the disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may be made in accordance with design requirements and other factors. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present disclosure should be included in the scope of protection of the present disclosure.
Claims (10)
1. A preparation method of a diamond-silicon carbide composite material is characterized by comprising the following steps:
adding diamond powder and silicon carbide powder into a gel premix prepared in advance, wherein the weight ratio of the diamond powder to the silicon carbide powder is (10-80): (20-90);
carrying out wet ball milling on the gel premix to prepare slurry;
injecting the slurry into a mold for molding to obtain a diamond-silicon carbide prefabricated blank;
and carrying out pressureless infiltration on the diamond-silicon carbide prefabricated blank in a vacuum environment to obtain a diamond-silicon carbide sintered body.
2. The method for preparing a diamond-silicon carbide composite material according to claim 1, wherein the gel premix is an acrylamide gel system premix, and further comprising:
preparing an acrylamide gel system premix liquid which contains acrylamide and methylene bisacrylamide, wherein the acrylamide and the methylene bisacrylamide respectively account for 2-10% and 0.2-1% of the total mass of the powder, and the volume of the powder and the volume of the acrylamide gel system premix liquid are 100% in total.
3. The method for preparing the diamond-silicon carbide composite material according to claim 2, wherein the step of injecting the slurry into a mold for molding to obtain a diamond-silicon carbide preform body comprises the following steps:
and carrying out vacuum degassing on the slurry, adding a catalyst and an initiator into the slurry, injecting the slurry into a mold for molding, and drying to obtain the diamond-silicon carbide prefabricated blank.
4. The method of preparing a diamond-silicon carbide composite material according to claim 1, further comprising:
and (3) degreasing the diamond-silicon carbide prefabricated blank by using a high-temperature cracking pre-sintering method, wherein the degreasing temperature is controlled to be lower than the graphitization temperature of the diamond, and the degreasing temperature is in the range of 1410-1450 ℃.
5. The method for preparing a diamond-silicon carbide composite material according to claim 1, wherein the pressureless infiltration of the silicon material into the diamond-silicon carbide preform body in a vacuum environment yields a sintered diamond-silicon carbide body comprising:
and paving a silicon material on the upper surface and/or the lower surface of the diamond-silicon carbide prefabricated blank, carrying out high-temperature pressureless liquid infiltration in a vacuum atmosphere, spontaneously infiltrating the silicon liquid formed by the silicon material into the diamond-silicon carbide prefabricated blank, and forming a silicon carbide thin layer on the surface of the diamond to obtain the diamond-silicon carbide sintered body with the diamond-silicon carbide-silicon interface layer.
6. The method of preparing a diamond-silicon carbide composite material according to claim 5, further comprising:
the acrylamide and the methylene bisacrylamide respectively account for 5 percent and 0.4 percent of the total mass of the powder; adding an acrylamide gel system premix liquid into the silicon carbide powder and the diamond powder according to the mass fraction of 16:84, wherein the catalyst is tetramethylethylenediamine, the initiator is ammonium persulfate, and the catalyst and the initiator respectively account for 0.03-0.09% and 0.3-0.9% of the total volume of the slurry and are added according to a preset flow rate.
7. The method for preparing the diamond-silicon carbide composite material according to claim 1 or 2, wherein the silicon carbide powder and the diamond powder are added to the gel premix liquid in a mass fraction of 32: 68.
8. The method for preparing the diamond-silicon carbide composite material according to claim 1 or 2, wherein the silicon carbide powder and the diamond powder are added to the gel premix liquid in a mass fraction of 47:53, or;
and adding the silicon carbide powder and the diamond powder into the gel premix liquid according to the mass fraction of 76: 24.
9. A diamond-silicon carbide composite material, characterized in that the diamond-silicon carbide composite material is prepared by the preparation method according to any one of claims 1 to 8.
10. An electronic device, wherein a heat dissipating material of the electronic device is the diamond-silicon carbide composite material according to claim 9.
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