CN114157172A - Silicon carbide driving device - Google Patents
Silicon carbide driving device Download PDFInfo
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- CN114157172A CN114157172A CN202010935515.6A CN202010935515A CN114157172A CN 114157172 A CN114157172 A CN 114157172A CN 202010935515 A CN202010935515 A CN 202010935515A CN 114157172 A CN114157172 A CN 114157172A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
- H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
- H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
- H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
- H02M7/53803—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration with automatic control of output voltage or current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides a silicon carbide driving device, which belongs to the technical field of power supplies and power electronics, and comprises: the processing board is provided with a conditioning circuit, and the conditioning circuit is used for conditioning an input pulse width modulation signal; the driving board is connected with the processing board, a driving module and a silicon carbide module are arranged on the driving board, the driving module is used for boosting the pulse width modulation signals after conditioning, and the silicon carbide module is used for inverting the pulse width modulation signals after boosting and generating adjustable current signals and/or adjustable voltage signals; the driving module supports pulse signals with the frequency greater than or equal to 1000 KHZ; the switching frequency of the silicon carbide module is 800KHZ-1000 KHZ. The silicon carbide driving device solves the problem that a driver in the prior art is low in switching frequency.
Description
Technical Field
The invention belongs to the technical field of power supplies and power electronics, and particularly relates to a silicon carbide driving device.
Background
Currently, the mainstream driver mainly adopts intelligent modules such as IPM (intelligent Power module), pim (Power Integrated module), igbt (insulated Gate Bipolar transistor) and the like, the switching frequency is generally only 20KHZ at most, and the IPM intelligent Integrated Power module is a short board in the aspect of heat dissipation. The technology of the driver mainly comprises: rectifier circuit technology, direct current buffer circuit technology, inverter circuit technology, current-voltage sampling circuit technology, protection circuit technology, reset circuit technology, voltage-sharing circuit technology, encoder sampling circuit technology and the like. The following technical requirements are generally applied to the driver: 1. inversion requirements: the rectification and inversion functions of alternating current-direct current-alternating current (AC-DC-AC) and direct current-alternating current (DC-AC) are supported; 2. sampling requirement: the method comprises the following steps of (1) encoder sampling, bus voltage sampling, output current sampling and temperature sampling; 3. protection claims are as follows: and the output current is subjected to overcurrent, bus overvoltage, overtemperature and overload protection.
However, the existing driver has a plurality of technical problems: 1. the switching frequency is low, and is only 20KHZ at most;
2. large internal resistance, large switching loss, large temperature rise and low inversion efficiency; 3. the buffer circuit, the reset circuit and the enabling circuit are designed separately, so that the use by a user is inconvenient, and the buffer resistor and the fryer are easy to burn; 3. the supported encoders are few in types; 4. DSP (digital Signal processing)/ARM (advanced RISC machine)/FPGA (field Programmable Gate array) is solidified, and the user can not carry out secondary development. Among these technical problems, the problem of low switching frequency is urgently to be solved.
Disclosure of Invention
The embodiment of the invention provides a silicon carbide driving device, which aims to solve the problem of low switching frequency of a driver in the prior art.
To solve the above technical problem, an embodiment of the present invention provides a silicon carbide driving device, including:
the processing board is provided with a conditioning circuit, and the conditioning circuit is used for conditioning an input pulse width modulation signal;
the driving board is connected with the processing board, a driving module and a silicon carbide module are arranged on the driving board, the driving module is used for boosting the pulse width modulation signals after conditioning, and the silicon carbide module is used for inverting the pulse width modulation signals after boosting and generating variable current signals and/or variable voltage signals;
the driving module supports pulse signals with the frequency greater than or equal to 1000 KHZ;
the switching frequency of the silicon carbide module is 800KHZ-1000 KHZ.
According to an embodiment of the invention, the driving module comprises a driving chip, and the model of the driving chip is ACPL-352J.
According to another embodiment of the present invention, the driving module further includes a push-pull circuit connected to the driving chip, and the push-pull circuit is configured to perform a push-pull boosting process on the pulse width modulation signal received by the driving chip.
According to another embodiment of the present invention, the driver board further comprises a drive power supply, the drive power supply being of type QA 151M.
According to another embodiment of the invention, the silicon carbide module is an England Rabdosia silicon carbide module.
According to another embodiment of the invention, the silicon carbide module is model FF11MR12W1M 1.
According to another embodiment of the present invention, the dc side main circuit structure of the driving board is an ac-dc-ac structure or a dc-ac structure, and the topology structure adopted by the inverter side of the driving board is any one of a single-phase half bridge, a single-phase full bridge, a two-level three-phase half bridge, a two-level three-phase full bridge, a three-level three-phase half bridge, a three-level three-phase full bridge, a five-level three-phase half bridge, a five-level three-phase full bridge, and a three-phase four-leg bridge.
According to another embodiment of the invention, a sampling module is further arranged on the driving plate, and the sampling module comprises 5 voltage samples and 10 current samples.
According to another embodiment of the present invention, the silicon carbide driving device further comprises an electromagnetic compatibility board, and the electromagnetic compatibility board is connected to the driving board and the processing board, respectively.
On the other hand, the embodiment of the invention also provides a driving system, which comprises the silicon carbide driving device and equipment to be driven, wherein the equipment to be driven is connected with the silicon carbide driving device.
The invention has the beneficial effects that:
the pulse width modulation signal input into the silicon carbide driving device of the embodiment of the invention is processed by the conditioning circuit of the processing board, then sent to the driving module on the driving board to be boosted to a preset voltage value, then sent to the silicon carbide module to be inverted, and processed by the silicon carbide module to generate a variable current-voltage signal, so that the variable current-voltage signal is used for controlling the equipment to be driven. In addition, the driving module in the embodiment supports the pulse signal with the frequency greater than or equal to 1000KHZ and the switching frequency of the silicon carbide module is as high as 800KHZ-1000 KHZ. Therefore, the silicon carbide driving device provided by the embodiment of the invention is simple in structure and has higher switching frequency, and the problem of low switching frequency of a driver in the prior art is solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a schematic block diagram of one embodiment of a silicon carbide drive of the present invention;
FIG. 2 is a schematic block diagram of one embodiment of a drive plate of the silicon carbide drive of the present invention;
FIG. 3 is a schematic diagram of a three-phase half-bridge main circuit of one embodiment of a drive board of the silicon carbide drive of the present invention;
FIG. 4 is a schematic block diagram of another embodiment of a silicon carbide drive of the present invention;
FIG. 5 is a topological block diagram of one embodiment of an electromagnetic compatibility board of the silicon carbide drive of the present invention;
FIG. 6 is a schematic block diagram of one embodiment of the drive system of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a silicon carbide driving device 100, including:
the processing device comprises a processing board 1, wherein a conditioning circuit 10 is arranged on the processing board 1, and the conditioning circuit 10 is used for conditioning an input pulse width modulation signal (PWM);
the driving board 2 is connected with the processing board 1, a driving module 20 and a silicon carbide module 21 are arranged on the driving board 2, the driving module 20 is used for boosting the pulse width modulation signals after conditioning, and the silicon carbide module 21 is used for inverting the pulse width modulation signals after boosting and generating variable current signals and/or variable voltage signals;
wherein, the driving module 20 supports the pulse signal with the frequency greater than or equal to 1000 KHZ;
the switching frequency of the silicon carbide module 21 is 800KHZ to 1000 KHZ.
The pulse width modulation signal input in this embodiment is an 8-way PWM modulation command, which is processed by the conditioning circuit of the processing board, sent to the driving module on the driving board, boosted to a preset voltage value, and then sent to the silicon carbide module for inversion processing, and processed by the silicon carbide module to generate a variable current-voltage signal, so as to control the device to be driven. In addition, the driving module in the embodiment supports the pulse signal with the frequency greater than or equal to 1000KHZ and the switching frequency of the silicon carbide module is as high as 800KHZ-1000 KHZ. Therefore, the silicon carbide driving device provided by the embodiment of the invention is simple in structure and has higher switching frequency, and the problem of low switching frequency of a driver in the prior art is solved.
In some implementations, the driver module 20 of the embodiment of the invention includes a driver chip 201, and the model of the driver chip 201 is ACPL-352J. In this embodiment, the driving chip, i.e., the driving optocoupler, is ACPL-352J, and the chip has the following advantages: supporting pulse signals above 1000 KHZ; excellent common mode transient suppression (CMTI) up to 100 kV/. mu.s, which avoids false gate driver failures in noisy environments; rail-to-rail output currents of up to 5A are supported, thus eliminating the need for output buffer circuitry; the integrated fault safety IGBT and MOSFET diagnosis, protection and fault reporting functions are provided; providing minimal propagation delay and excellent timing skew. The high peak output current and wide operating voltage range of the chip eliminates the need for output buffer circuits, enabling designers to implement cost-effective gate driver solutions for motor drivers and power inverters.
In some implementations, referring to fig. 2, the driving module 20 of the embodiment of the present invention further includes a push-pull circuit 202 connected to the driving chip 201, where the push-pull circuit 202 is configured to perform a push-pull boosting process on the pulse width modulation signal received by the driving chip 201. The driving circuit in the embodiment uses a push-pull circuit, which has the advantages that: in a general push-pull circuit, such as an output stage, the circuit operates to amplify an input signal; the circuit operation is completed, but generally, the push-pull circuit uses the same-order elements (transistors or electronic tubes) to realize the alternate conduction of the output stage elements, two signals with equal magnitude and opposite phases must be excited, namely, the problem of phase inversion is solved, the circuit for phase inversion can be completed, and an inductance element (transformer) can be used without increasing the complexity and the reliability of the circuit. The complementary circuit overcomes the above-described problems with unipolar elements. When the circuit works, the bipolar elements are conducted in turn, so that an inverter can be omitted or the circuit can be simplified, and the stability of the circuit can be correspondingly improved. For example, when the input signal is positive, the PNP transistor in the bipolar transistor is turned on, and the PNP transistor is turned off due to the polarity thereof, and when the input signal is negative, the PNP transistor is turned on, and the NPN transistor is turned off. The circuit can be automatically switched on and off to complete the circuit operation regardless of the change of the signal. The push-pull circuit has simple structure and high utilization rate of the magnetic core of the switch transformer, and when the push-pull circuit works, only one of the two symmetrical power switch tubes is conducted at a time, so that the conduction loss is small.
In some implementations, referring to fig. 2, the driving board 2 of the embodiment of the present invention further includes a driving power source 22, and the type of the driving power source 22 is: QA 151M. The QA151M is used as the driving power supply in the embodiment, and the power supply has the advantages that: the power conversion efficiency is high and reaches 83%; the isolation voltage is 6000VDC, the ultra-small isolation capacitor is 3.5pF, and the short-circuit protection can be continued; the silicon carbide SiC power supply adopts a two-path independent output and then common connection mode, can better provide energy for the on and off of the silicon carbide SiC, and has output short circuit protection and self-recovery capability.
In some implementations, the silicon carbide modules 21 of embodiments of the present invention are British Rabdosia silicon carbide modules.
In some implementations, the silicon carbide module 21 of an embodiment of the present invention is model FF11MR12W1M 1.
In this embodiment, the silicon carbide module, i.e., the inverter circuit, is an inflixion silicon carbide module, model FF11MR12W1M1, and the module has the following advantages: converting the DC direct current into alternating currents with different frequencies and different phases according to the PWM modulation signal; having a switching frequency of up to 1 GHZ; low switching loss, low thermal resistance and low temperature rise; the inversion conversion efficiency is as high as 99%; because the silicon carbide has a body diode, an external anti-parallel diode is not needed under any condition, and a current follow current circuit is simplified; resulting in smaller size product designs and higher efficiencies; higher frequency operation allows the driver to be made smaller; the pressure resistance of 1200V, which allows operation at higher temperatures, means that the cooling system can be simpler.
The silicon carbide driving device provided by the embodiment of the invention adopts a three-phase four-bridge arm silicon carbide driving board, and mainly realizes the AC-DC-AC inversion function, temperature sampling, 4-path output current sampling, 3-path output voltage sampling, 1-path bus current sampling and 8-path PWM push-pull boosting to 17V output; the control of a three-phase motor and a three-phase four-bridge arm power grid can be realized; the silicon carbide module made of the latest global third-generation semiconductor material uses a driving chip ACPL-352J newly introduced by AVAGO company of Anghuagao and a driving electric module QA151M of Jinshengyang company, and simultaneously uses a push-pull circuit to enable the switching frequency of a silicon carbide power module (model FF11MR12W1M 1) to reach 800KHZ, so that the output current of a silicon carbide driver is controlled to be more vivid in sine wave shape, and the motor control effect is better.
In some implementations, the main circuit structure on the dc side of the driving board 2 according to the embodiment of the present invention is an ac-dc-ac structure or a dc-ac structure, and the topology structure adopted on the inverter side of the driving board 2 is any one of a single-phase half bridge, a single-phase full bridge, a two-level three-phase half bridge, a two-level three-phase full bridge, a three-level three-phase half bridge, a three-level three-phase full bridge, a five-level three-phase half bridge, a five-level three-phase full bridge, and a three-phase four-leg bridge. The silicon carbide driver of the present embodiment can support a variety of topologies.
In some implementations, referring to fig. 2, a sampling module 23 is further disposed on the driving board 2 according to an embodiment of the present invention, and the sampling module 23 includes 5 voltage samples and 10 current samples. The silicon carbide driving device of the embodiment has more and richer sampling signal paths.
The driving board of the embodiment of the invention is also provided with a signal level conversion module, a weak current signal isolation module,
The device comprises a buffer relay module, a rectifying module, a bus capacitor filtering module, a bus voltage-sharing module, a braking module, a multi-path power supply module, an active Miller clamping module, a power module short-circuit protection module and the like.
In summary, the driving board according to the embodiment of the present invention mainly includes:
1. converting the weak-current digital signal into an analog signal, conditioning and amplifying the analog signal, and transmitting the analog signal to a controlled object;
2. the power frequency alternating current power supply or the direct current power supply is inverted into alternating current power supplies with various frequencies and is supplied to a controlled object, so that the power conversion function of the power supply is realized, and the functions of regulating voltage, frequency, current, speed and the like are further realized;
3. the power device generally adopts a driving circuit which is designed by taking intelligent power modules IPM, PIM, IGBT and silicon carbide SIC as cores, but the IPM is internally integrated with the driving circuit and is also provided with fault detection protection circuits such as overvoltage, overcurrent, overheat and undervoltage, and a soft start circuit or a buffer circuit is also designed in a main loop to reduce the impact of the starting process on a driver so as to prevent the instantaneous current from being overlarge and the bus capacitor from forming short circuit to cause explosion; the power driving unit firstly rectifies input three-phase power or commercial power through a three-phase full-bridge uncontrolled rectifying circuit to obtain corresponding direct current, and then controls a controlled object through a three-phase sine PWM voltage type inverter, wherein the whole process of the power driving unit can be simply referred to as an AC-DC-AC process; the main topological circuit of the rectifying unit (AC-DC) is a three-phase full-bridge uncontrolled rectifying circuit;
4. the main circuit on the direct current side of the driving plate adopts an alternating current-direct current-alternating current structure AC-DC-AC and a direct current-alternating current structure DC-AC; the inverter side of the driving plate can adopt a three-phase half bridge, which is shown in figure 3;
5. multiple input voltage levels are supported: the method comprises the following steps of inputting 220V/three-phase 380V alternating current and inputting 0-600V direct current;
6. the supported power level: rated output power (current): 2KW, 15KW, 30KW, 55KW, and the like;
7. a variety of topologies are supported: the two-level three-phase half-bridge comprises a three-bridge arm and a four-bridge arm, and a common collector has various topological structures such as T-shaped three-level and the like;
8. the power module silicon carbide SIC is completely made of the first worldwide Infineon brand, the maximum bearing voltage is 1200V, the current is selected and matched according to the power grade, and the switching frequency of the silicon carbide SIC is as high as 1000 KHZ;
8. the bus voltage supports a rated direct current voltage DC600V, and the maximum voltage is 720V (overvoltage threshold);
9. the overload capacity currently supports 3 times of overload (overload time is 1 second) at most;
10. voltage sampling module (total 5 paths): the sampling (optional) of phase voltage and line voltage is supported, the voltage of a bus is 1 path, the voltage of a midpoint of a series capacitor is 1 path, and the output voltage of a driving plate is 3 paths; the precision is 0.5%, the response time is less than 40us, and the frequency is 200 Hz;
11. current sampling module (total 10 paths): 1 bus current path, 1 capacitor midpoint current path in series connection, and 4 driver board output currents; 4 paths of current of a transverse bridge arm of the driving plate; the precision is 0.5%, the response time is less than 1us, and the frequency is 100 KHz;
12. and (4) protection function: bus overvoltage, driver output current overcurrent, over-temperature protection, braking function and the like;
13. the driving chip of the power module adopts AVAGO brand, and has the characteristics of high performance, driving current reaching 2.5A, power supply under-voltage and short-circuit protection functions and the like;
14. the DCDC power supply module adopts a MORNSUN brand, and has the characteristics of small ripple, low noise, low heat emission and the like of an output power supply;
15. the Hall voltage/current sensor adopts ZX brand, and can accurately measure direct current, alternating current, pulse and various voltage/current with irregular waveform under the condition of electrical isolation;
16. the protection circuit is formed by DQ triggers newly promoted by TI brand, and has the characteristics of sensitive response, low power consumption and the like.
17. Various motor controls are supported: alternating current asynchronous/synchronous motors, permanent magnet synchronous motors, alternating current servo motors, direct current brushless/brushed motors, alternating current/direct current linear motors, custom motors, and the like; the method is widely applied to the fields of new energy automobiles, motor support aligning systems, servo industrial control and the like;
18. and grid connection control is supported: the single-phase grid-connected inversion function and the three-phase grid-connected inversion function are realized; the method is widely applied to the fields of wind power, photovoltaics, energy storage systems, UPS systems, active filtering, harmonic suppression, reactive compensation, three-phase imbalance and the like.
19. The circuit board is designed by adopting 6 layers, and has the characteristics of strong anti-interference capability, high signal reliability, strong EMC electromagnetic compatibility function and the like.
The processing board in the embodiment of the invention has the main functions of conditioning the acquired signals such as current, voltage and an encoder, processing fault protection and fault reset in time, indirectly controlling digital input and output signals and the like.
The processing board comprises a plurality of modules, specifically:
1. conditioning circuitry, i.e. sampling signal conditioning modules (voltage, current, temperature, etc.):
the Hall voltage/current sensor adopts ZX brand, and can accurately measure direct current, alternating current, pulse and various voltage/current with irregular waveform under the condition of electrical isolation;
voltage sampling module (total 10 paths): the bus voltage is 1 path, the driver outputs 3 paths of voltage, the network access voltage is 3 paths, and the load voltage is 3 paths; the precision is 0.5%, the response time is less than 40us, and the frequency is 200 Hz;
current sampling module (13 paths in total): 1 bus current, 4 driver output currents, 4 network access currents and 4 load currents; the precision is 0.5%, the response time is less than 1us, and the frequency is 100 KHz;
2. digital input module DI: 3-path high-speed isolation input (bidirectional) with maximum frequency of 50 KHZ;
3. digital output module DO: 3 paths of high-speed isolated output, the maximum frequency of 50KHZ, the current of 3A/AC250V and the current of 1A/DC 30V;
4. multi-channel power supply module (3.3V, 5V, +15V, -15V, 24V):
the precision and the linear voltage stabilization degree are 1 percent; the MORSUN brand is adopted, and the power supply has the characteristics of small ripple, small noise, low heat emission and the like of an output power supply;
5. encoder acquisition module and signal conditioning module:
multiple encoder types are supported: single-ended/differential incremental (5V/24V), absolute, rotary, hall, grating scale encoders, etc.; support encoder digital/analog signal output, support high resolution/precision encoders (such as 2500 lines/3600 lines/5000 lines, etc.);
6. protection module (overvoltage, overcurrent, overtemperature, etc.):
the protection circuit formed by the LM293 comparator and a DQ trigger newly promoted by a TI brand has the characteristics of sensitive response, low power consumption and the like, and has the functions of bus overvoltage, driver output current overcurrent, over-temperature protection, braking and the like;
7. a fault reset module:
the reset circuit adopts a protection circuit formed by DQ triggers newly promoted by TI brand, has the characteristics of sensitive response, low power consumption and the like,
8. 4 pairs of complementary PWM signal outputs are supported.
9. The circuit board is designed by adopting 6 layers, and has the characteristics of strong anti-interference capability, high signal reliability, strong EMC electromagnetic compatibility function and the like.
In some implementations, referring to fig. 4, the silicon carbide driving device 100 according to the embodiment of the present invention further includes an electromagnetic compatibility board 3, and the electromagnetic compatibility board 3 is connected to the driving board 2 and the processing board 1, respectively.
The EMC main functions of the electromagnetic compatibility board in this embodiment are:
1. the method is mainly used for reducing and inhibiting the electromagnetic interference generated by the driver and meeting the European standard EN61000 level standard;
2. the EMC electromagnetic compatibility board topological structure can be used as a single L filter and a one-stage LC and two-stage LC filter, and is shown in figure 5;
3. technical parameters of the EMC electromagnetic compatibility board:
1) rated input voltage: three-phase AC 0-380V;
2) rated output voltage: three-phase AC 0-380V;
3) rated output power (current): 15KW (25A);
4) device configuration: the device comprises an X safety capacitor, a Y safety capacitor, a piezoresistor, a discharge tube and a common mode inductor;
5) inductance L parameter: 20 mH;
6) the working frequency is as follows: 50/60 Hz;
7) temperature range: -25 ℃ to +85 ℃;
8) temperature rise: < 30 ℃;
9) and (3) withstand voltage test: 1 minute;
10) line-to-line SURGE voltage: 2 KV;
11) line-ground SURGE voltage: 2 KV;
12) line-to-line burst EFT voltage: 4 KV;
13) line-to-line burst EFT voltage: 4 KV;
14) the circuit board is designed by adopting 6 layers, and has the characteristics of strong anti-interference capability, high signal reliability, strong EMC electromagnetic compatibility function and the like.
On the other hand, referring to fig. 6, an embodiment of the present invention further provides a driving system, which includes the silicon carbide driving device 100 described above and a device to be driven 200 connected to the silicon carbide driving device 100.
Referring to fig. 6, the driving system in this embodiment further includes a switching system 300 and a controller 400, wherein the controller may be a real-time simulation controller.
The driving system in this embodiment may be a system controlled by various motors, a smart grid system, a new energy grid-connected control system, a wireless charging system, and the like, for example, the following application occasions:
1. the smart grid and the new energy are connected in a grid mode: the method is mainly applied to devices such as a high-voltage direct-current transmission converter valve, a flexible alternating-current transmission device, a high-voltage direct-current breaker and the like, and a power electronic transformer and the like of the smart grid;
2. a rail transit system;
3. new energy automobile controller: main drive control, vehicle-mounted controller, charging pile and the like;
4. the unmanned industry;
5. wireless charging industry;
6. a solar inverter;
7. an energy storage system;
8. UPS: a high efficiency dual conversion system;
9. a motor driver: active front and motor sides (hybrid silicon carbide);
10. power supply: power aids for traction applications, induction heating, etc.
In summary, the silicon carbide driver according to the embodiment of the present invention has the following advantages:
1. the user can perform the algorithm program research simulation and the downloaded program real-time debugging again, support various different motor controls and support the three-phase four-leg power grid control at the same time;
2. the silicon carbide SIC module made of the latest global third-generation semiconductor material is adopted, and the switching frequency reaches 800KHZ, so that the output current of the silicon carbide driver is controlled to be more vivid and close to a sine wave shape, and the motor control effect is better;
3. the driving chip ACPL-352J newly introduced by AVAGO company of high in Anhua is used, the capability of outputting current is strong, and the driving chip has the advantages of gate driving signal undervoltage protection, overcurrent soft turn-off protection, gate signal state feedback and the like;
4. the driving electric module QA151M of Jinsheng Yang company is used for generating +15V and-5V power supplies and has the functions of short-circuit protection and self-recovery;
5. the latest push-pull driving circuit is used, the gate driving current is increased to 5A, and a high-power 100KW silicon carbide power module can be driven;
6. the three-phase bridge can support various topological structures, such as a single-phase half-bridge/full-bridge, a two-level three-phase half-bridge/full-bridge, a three-level three-phase half-bridge/full-bridge, a five-level three-phase half-bridge/full-bridge, a three-phase four-bridge arm, AC-DC-AC and DC-AC;
7. more and richer sampling signal paths are provided;
8. the protection function is comprehensive, and the driver has a fault self-checking function when being started;
9. small internal resistance (generally 10 milliohms), small switching loss and low temperature rise;
10. the PWM switching frequency is as high as 200 KHZ;
11. the inversion output efficiency is as high as 98 percent;
12. the large current bandwidth is supported, and the method is particularly suitable for motor control research and power electronic grid connection research;
13. supporting high voltage 1200V and large current 600A.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A silicon carbide driving device, comprising:
the processing board is provided with a conditioning circuit, and the conditioning circuit is used for conditioning an input pulse width modulation signal;
the driving board is connected with the processing board, a driving module and a silicon carbide module are arranged on the driving board, the driving module is used for boosting the pulse width modulation signals after conditioning, and the silicon carbide module is used for inverting the pulse width modulation signals after boosting and generating variable current signals and/or variable voltage signals;
the driving module supports pulse signals with the frequency greater than or equal to 1000 KHZ;
the switching frequency of the silicon carbide module is 800KHZ-1000 KHZ.
2. The SiC driving device according to claim 1, wherein the driving module comprises a driving chip with model number ACPL-352J.
3. The SiC driving device as claimed in claim 2, wherein the driving module further comprises a push-pull circuit connected to the driving chip, and the push-pull circuit is configured to perform a push-pull boosting process on the PWM signal received by the driving chip.
4. The silicon carbide driving device as claimed in claim 1, wherein the driving plate further comprises a driving power supply of type QA 151M.
5. The silicon carbide drive of claim 1, wherein the silicon carbide modules are British Rabdosia silicon carbide modules.
6. The SiC driving device according to claim 5, wherein the SiC module is model FF11MR12W1M 1.
7. The silicon carbide driving device as claimed in claim 1, wherein the dc side main circuit structure of the driving board is an ac-dc-ac structure or a dc-ac structure, and the inverter side of the driving board adopts a topology structure selected from any one of a single-phase half bridge, a single-phase full bridge, a two-level three-phase half bridge, a two-level three-phase full bridge, a three-level three-phase half bridge, a three-level three-phase full bridge, a five-level three-phase half bridge, a five-level three-phase full bridge, and a three-phase four-leg bridge.
8. The SiC driving device according to any one of claims 1-7, wherein the driving board is further provided with a sampling module, and the sampling module comprises 5 voltage samples and 10 current samples.
9. The silicon carbide driving device according to any one of claims 1 to 7, further comprising an electromagnetic compatibility board, the electromagnetic compatibility board being connected to the driving board and the processing board, respectively.
10. A drive system comprising a silicon carbide drive device according to any one of claims 1 to 9 and equipment to be driven connected to the silicon carbide drive device.
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| CN202010935515.6A CN114157172A (en) | 2020-09-08 | 2020-09-08 | Silicon carbide driving device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010935515.6A CN114157172A (en) | 2020-09-08 | 2020-09-08 | Silicon carbide driving device |
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