CN114156346A - AlGaN/GaN-based 35GHz millimeter wave rectifier and preparation method and application thereof - Google Patents
AlGaN/GaN-based 35GHz millimeter wave rectifier and preparation method and application thereof Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000002955 isolation Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 239000013077 target material Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 18
- 229910021641 deionized water Inorganic materials 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 12
- 238000009210 therapy by ultrasound Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims 1
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 238000001259 photo etching Methods 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 229910004304 SiNy Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses an AlGaN/GaN-based 35GHz millimeter wave rectifier and a preparation method and application thereof. The structure comprises an Al substrate and non-doped Al from bottom to top in sequencexGa1‑xThe N layer and the non-doped GaN layer further comprise a mesa isolation groove and a Schottky contact electrode; the bottom of the mesa isolation groove is positioned at the undoped AlxGa1‑xOne side of the N layer is in contact with the non-doped GaN layer, the other side of the N layer is in contact with the Schottky contact electrode, and a layer of SiN is deposited on the inner surface of the table top isolation grooveyA passivation layer; the bottom of the Schottky contact electrode is positioned at the non-doped AlxGa1‑xAnd one side of the N layer is in contact with the mesa isolation groove, and the other side of the N layer is the side surface of the rectifier. The rectifier obtained by the invention can grow at room temperature, reduces energy consumption, has low target material cost and can be produced in a large scale.
Description
Technical Field
The invention belongs to the technical field of rectifiers, and particularly relates to an AlGaN/GaN-based 35GHz millimeter wave rectifier and a preparation method and application thereof.
Background
The 35GHz millimeter wave rectifier is used as an indispensable part of a space wireless energy transmission system, and has wide application in military and civil fields such as satellite systems, aerospace aircrafts, household appliances and the like. As a third-generation semiconductor, GaN has the characteristics of high breakdown voltage, large forbidden band width, high thermal conductivity, high electronic saturation rate, high carrier mobility and the like, so that the GaN has great potential in the preparation aspect of 35GHz millimeter wave rectifiers. At high frequencies, the heat dissipation capability has a significant impact on the performance of the rectifier. The Al has high thermal conductivity coefficient of 237W/mK, and has small lattice mismatch with the AlGaN/GaN epitaxial layer, so the Al is an ideal substrate of the AlGaN/GaN35GHz millimeter wave rectifier. At present, pulse laser is mostly adopted to ablate GaN target materials when AlGaN grows on an Al substrate by utilizing a PLD method, and the Al substrate is heated to escape Al plasma so as to synthesize AlGaN; or directly adopts laser to ablate AlGaN target material. However, the former cannot grow at room temperature, which limits the quality of AlGaN/GaN heterojunction and increases energy consumption; in the latter case, large-scale production cannot be achieved due to the high cost of the AlGaN target. Therefore, exploring a suitable PLD growth method is particularly important for obtaining an AlGaN/GaN-based 35GHz millimeter wave rectifier with high heat dissipation capability.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention mainly aims to provide an AlGaN/GaN-based 35GHz millimeter wave rectifier.
The invention also aims to provide a preparation method of the AlGaN/GaN-based 35GHz millimeter wave rectifier, which has the advantages of high matching with the existing production means and easiness in implementation.
The invention further aims to provide application of the AlGaN/GaN-based 35GHz millimeter wave rectifier.
The purpose of the invention is realized by the following technical scheme:
an AlGaN/GaN-based 35GHz millimeter wave rectifier sequentially comprises an Al substrate and undoped Al from bottom to topxGa1-xThe N layer and the non-doped GaN layer further comprise a mesa isolation groove and a Schottky contact electrode; the bottom of the mesa isolation groove is positioned at the undoped AlxGa1-xOne side of the N layer is in contact with the non-doped GaN layer, the other side of the N layer is in contact with the Schottky contact electrode, and a layer of SiN is deposited on the inner surface of the table top isolation grooveyA passivation layer; the bottom of the Schottky contact electrode is positioned at the non-doped AlxGa1- xAnd one side of the N layer is in contact with the mesa isolation groove, and the other side of the N layer is the side face of the rectifier, wherein x is 0.15-0.2, and y is 1.37-1.53.
Preferably, the undoped AlxGa1-xThe thickness of the N layer is 300-320 nm, and the thickness of the non-doped GaN layer is 20-30 nm.
Preferably, the depth of the mesa isolation groove is 245-255 nm; the thickness of the Schottky contact electrode is 190-200 nm.
Preferably, the length of the bottom of the mesa isolation groove is 95-105 μm, and the length of the upper part of the mesa isolation groove is 145-155 μm; the length of the bottom of the Schottky contact electrode is 155-165 mu m, and the length of the upper part of the Schottky contact electrode is 115-125 mu m; the AlGaN/GaN-based 35GHz millimeter wave rectifier is 800 microns long.
Preferably, SiN on the inner surface of the mesa isolation grooveyThe thickness of the passivation layer is 8-12 nm.
Preferably, the AlGaN/GaN-based 35GHz millimeter wave rectifier epitaxial wafer is prepared by using an Al target material and a Ga target material as raw materials and utilizing a pulse laser technology.
More preferably, the AlGaN/GaN-based 35GHz millimeter wave rectifier epitaxial wafer consists ofThe preparation method comprises the following steps: growing non-doped Al on an Al substrate by using an Al target and a Ga target as raw materials and utilizing a pulse laser technique (PLD) at room temperaturexGa1-xN layer, Ga target material as raw material, and non-doped Al layer by PLDxGa1-xAnd growing a non-doped GaN layer on the N layer to obtain the rectifier epitaxial wafer.
The preparation method of the AlGaN/GaN-based 35GHz millimeter wave rectifier comprises the following steps of:
(1) growing non-doped Al on an Al substrate by using an Al target and a Ga target as raw materials and utilizing a pulse laser technique (PLD) at room temperaturexGa1-xN layer, Ga target material as raw material, and non-doped Al layer by PLDxGa1-xGrowing an undoped GaN layer on the N layer to obtain a rectifier epitaxial wafer, wherein x is 0.15-0.2;
(2) sequentially placing the rectifier epitaxial wafer obtained in the step (1) in acetone and absolute ethyl alcohol for ultrasonic treatment, taking out, washing with deionized water, and drying with nitrogen;
(3) transferring the Schottky contact pattern to the rectifier epitaxial wafer obtained in the step (2): uniformly spin-coating photoresist on the rectifier epitaxial wafer obtained in the step (2), exposing, and cleaning with a developing solution to show the pattern;
(4) etching a groove along the Schottky contact electrode pattern in the rectifier epitaxial wafer obtained in the step (3) by using a reactive ion etching method to obtain a Schottky contact electrode pattern groove;
(5) depositing metal into the Schottky contact electrode pattern groove of the rectifier epitaxial wafer obtained in the step (4) by adopting an evaporation method, and annealing to obtain a Schottky contact electrode;
(6) immersing the rectifier epitaxial wafer obtained in the step (5) into a degumming solution, washing with deionized water, placing in acetone for ultrasonic treatment, and drying with nitrogen;
(7) uniformly spin-coating photoresist on the rectifier epitaxial wafer obtained in the step (6), exposing, cleaning by using a developing solution, preparing a mesa isolation pattern on the surface of the rectifier epitaxial wafer, and etching a groove along the mesa isolation pattern by using a reactive ion etching method;
(8) etching the isolation pattern with the mesa obtained in the step (7)Putting the rectifier epitaxial wafer etched with the groove into a plasma enhanced chemical vapor deposition device, heating, introducing carrier gas and reaction gas after vacuumizing, and depositing SiN on the surface of the rectifier epitaxial waferyA passivation layer, wherein y is 1.37-1.53;
(9) soaking the surface of the rectifier epitaxial wafer obtained in the step (8) with residual photoresist and SiN through photoresist solution and ultrasonic cleaningyRemoving only SiN in the mesa isolation pattern etching grooveyAnd obtaining the AlGaN/GaN-based 35GHz millimeter wave rectifier.
Preferably, the laser energy of the pulsed laser technology in the step (1) is 600 mJ.
Preferably, the environment for depositing the metal in the step (5) is vacuum, and the vacuum degree is 5 × 10-5Pa; the metal is Ni and Au; the annealing temperature is 400 ℃, and the annealing time is 600 min.
Preferably, the time for soaking the rectifier epitaxial wafer in the degumming solution in the step (6) is 63-67 min.
The AlGaN/GaN-based 35GHz millimeter wave rectifier is applied.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) the Al substrate is a high-heat-conductivity substrate, and the AlGaN layer is directly contacted with the Al substrate; therefore, when applied to high frequency, a large amount of generated heat can be rapidly dissipated, thereby being suitable for high frequency application and being beneficial to prolonging the service life of the rectifier.
(2) When the non-doped AlGaN layer is grown by the PLD method, two beams of pulse laser are adopted to respectively ablate the Al target and the Ga target to generate Al plasma and Ga plasma, and the Al plasma and the Ga plasma are combined with the N plasma to generate AlGaN, so that the AlGaN layer can be grown at room temperature, the energy consumption is reduced, the target cost is low, and the large-scale production can be realized.
Drawings
Fig. 1 is a schematic cross-sectional view of a rectifier chip obtained in embodiment 1 of the present invention; wherein 1-Al substrate, 2-undoped AlxGa1-xN layer, 3-undoped GaN layer, 4-SiNyPassivation layer, 5-mesa isolation groove, 6-schottky contact electrode.
FIG. 2 is a forward J-V curve of the rectifier obtained in example 1 of the present invention.
FIG. 3 is an inverted I-V curve of the rectifier obtained in example 1 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
Those who do not specify specific conditions in the examples of the present invention follow conventional conditions or conditions recommended by the manufacturer. The raw materials, reagents and the like which are not indicated for manufacturers are all conventional products which can be obtained by commercial purchase.
Example 1
In this embodiment, a structure of an AlGaN/GaN-based 35GHz mm-wave rectifier is shown in fig. 1, and the structure of the AlGaN/GaN-based 35GHz mm-wave rectifier includes, from bottom to top, an Al substrate (1) and undoped Al in sequencexGa1-xThe N layer (2) and the non-doped GaN layer (3), and further comprises a mesa isolation groove (5) and a Schottky contact electrode (6); the bottom of the table-board isolation groove (5) is positioned at non-doped AlxGa1-xN layer (2), one side is with non-doping GaN layer (3) contact, and the opposite side is with schottky contact electrode (6) contact, mesa is kept apart recess (5) internal surface deposit and is had a layer of SiNyA passivation layer (4); the bottom of the Schottky contact electrode (6) is positioned at non-doped AlxGa1-xAnd one side of the N layer (2) is in contact with the mesa isolation groove (5), and the other side of the N layer is the side surface of the rectifier.
The non-doped AlxGa1-xThe thickness of the N layer (2) is 300 nm; the thickness of the non-doped GaN layer (3) is 20 nm; the thickness of the Schottky contact electrode (6) is 200 nm; the depth of the mesa isolation groove (5) is 250 nm; SiN deposited in mesa isolation groovesyThe thickness of the passivation layer (4) is 10 nm; the length of the bottom of the mesa isolation groove is 100 mu m, and the length of the upper part of the mesa isolation groove is 150 mu m; the length of the bottom of the Schottky contact electrode is 160 mu m, and the length of the upper part of the Schottky contact electrode is 120 mu m; the AlGaN/GaN-based 35GHz millimeter wave rectifier is 800 microns long.
The preparation method of the AlGaN/GaN-based 35GHz millimeter wave rectifier of the embodiment includes:
(1) as shown in FIG. 1, room temperatureThen, Al target and Ga target are used as raw materials, PLD is adopted to grow rectifier epitaxial wafer on a silicon substrate, and non-doped Al grown on the Al substrate (1) by utilizing PLDxGa1-xN (x is 0.18) layer (2), Ga target material as raw material, and non-doped Al by PLDxGa1-xGrowing an undoped GaN layer (3) on the N layer (2); the non-doped AlxGa1-xThe thickness of the N layer (2) is 300 nm; the thickness of the non-doped GaN layer (3) is 20nm, and the laser energy is 600 mJ;
(2) sequentially placing the rectifier epitaxial wafer in acetone and absolute ethyl alcohol for ultrasonic treatment for 5min, taking out, washing by deionized water, and drying by nitrogen;
(3) spin-coating a positive photoresist on the cleaned rectifier epitaxial wafer, wherein the model is AZ5214, the photoresist thickness is 0.3 mu m, placing the epitaxial wafer coated with the photoresist on a hot table for prebaking for 45s, then placing the epitaxial wafer into a photoetching machine for exposure for 5s, then immersing the exposed epitaxial wafer into a developing solution, wherein the model of the developing solution is RZX3038, the immersion time is 60s, so that the pattern on the epitaxial wafer is shown, washing the epitaxial wafer with deionized water, and drying the epitaxial wafer with nitrogen; finally, placing the epitaxial wafer on a hot table, and baking for hardening the film for 45 s;
(4) etching a groove along the Schottky contact electrode pattern in the rectifier epitaxial wafer by using a reactive ion etching method, wherein the depth of the groove is 200 nm;
(5) putting the rectifier epitaxial wafer etched with the Schottky contact electrode pattern groove obtained in the step (4) into an electron beam evaporation device, and pumping the vacuum degree of a cavity to 5 multiplied by 10-5Pa, and then sequentially evaporating electrode metal Ni/Au; after the evaporation is finished, annealing the rectifier epitaxial wafer at 400 ℃ for 60min to obtain a Schottky contact electrode (6);
(6) soaking the prepared rectifier epitaxial wafer of the Schottky contact electrode in a degumming solution for 65min, taking out, washing with deionized water, placing in acetone, performing ultrasonic treatment for 5min, taking out, washing with deionized water, and drying with nitrogen;
(7) repeating the steps (3) and (4), photoetching and developing the surface of the epitaxial wafer to prepare a mesa isolation pattern, etching a groove by using reactive ion etching equipment through the mesa isolation pattern, wherein the etching depth is 250nm, finally cleaning the surface of the epitaxial wafer by using deionized water and drying the surface of the epitaxial wafer by using nitrogen to obtain a mesa isolation groove (5);
(8) manufacturing a mesa isolation passivation layer: placing the rectifier epitaxial wafer into a plasma enhanced chemical vapor deposition device, heating the device to 400 ℃, and pumping the vacuum degree of a cavity to 5 multiplied by 10-5Pa, depositing SiN in etching grooves of rectifier epitaxial waferyDepositing a passivation layer (y is 1.37-1.53) for 75 min;
(9) soaking the prepared rectifier epitaxial wafer in the degumming solution for 65min, taking out, washing with deionized water, placing in acetone, performing ultrasonic treatment for 5min, taking out, washing with deionized water, blow-drying with nitrogen, and removing residual SiN on the surface of the rectifier epitaxial waferyWith the photoresist, only the SiN in the mesa isolation pattern etching groove is reservedy(4) And finishing the preparation of the AlGaN/GaN-based 35GHz millimeter wave rectifier.
The structure of the rectifier manufactured in this example is shown in fig. 1. The forward J-V curve of the epitaxial wafer is shown in FIG. 2, the turn-on voltage is 0.81V, and the calculated specific on-resistance RON is 9.2m omega/sq, so that the stability and reliability of the device are good under the condition of high-power operation. The reverse I-V curve of the epitaxial wafer is shown in FIG. 3, and under a reverse bias of-20V, the leakage current of the device is-0.0004A, and the reverse leakage performance is good. The defect density of this example was measured to be about 2X 108cm-2。
Example 2
In this embodiment, a structure of an AlGaN/GaN-based 35GHz mm-wave rectifier is shown in fig. 1, and the structure of the AlGaN/GaN-based 35GHz mm-wave rectifier includes, from bottom to top, an Al substrate (1) and undoped Al in sequencexGa1-xThe N layer (2) and the non-doped GaN layer (3), and further comprises a mesa isolation groove (5) and a Schottky contact electrode (6); the bottom of the table-board isolation groove (5) is positioned at non-doped AlxGa1-xN layer (2), one side is with non-doping GaN layer (3) contact, and the opposite side is with schottky contact electrode (6) contact, mesa is kept apart recess (5) internal surface deposit and is had a layer of SiNyA passivation layer (4); the bottom of the Schottky contact electrode (6) is positioned at non-doped AlxGa1-xN layer (2) with one side isolated from the mesaThe grooves (5) are in contact, and the other side of each groove is the side surface of the rectifier.
The non-doped AlxGa1-xThe thickness of the N layer (2) is 320 nm; the thickness of the non-doped GaN layer (3) is 30 nm; the thickness of the Schottky contact electrode (6) is 200 nm; the depth of the mesa isolation groove (5) is 250 nm; SiN deposited in mesa isolation groovesyThe thickness of the passivation layer (4) is 10 nm; the length of the bottom of the mesa isolation groove is 100 mu m, and the length of the upper part of the mesa isolation groove is 150 mu m; the length of the bottom of the Schottky contact electrode is 160 mu m, and the length of the upper part of the Schottky contact electrode is 120 mu m; the AlGaN/GaN-based 35GHz millimeter wave rectifier is 800 microns long.
The preparation method of the AlGaN/GaN-based 35GHz millimeter wave rectifier of the present embodiment:
(1) as shown in figure 1, at room temperature, Al target and Ga target are taken as raw materials, PLD is adopted to grow rectifier epitaxial wafer on a silicon substrate, and non-doped Al grown on an Al substrate (1) by utilizing PLDxGa1-xN layer (x is 0.20) (2), Ga target material, and non-doped Al by PLDxGa1-xGrowing an undoped GaN layer (3) on the N layer (2); the non-doped AlxGa1-xThe thickness of the N layer (2) is 320 nm; the thickness of the non-doped GaN layer (3) is 30nm, and the laser energy is 600 mJ;
(2) sequentially placing the rectifier epitaxial wafer in acetone and absolute ethyl alcohol for ultrasonic treatment for 5min, taking out, washing by deionized water, and drying by nitrogen;
(3) spin-coating positive photoresist on the cleaned rectifier epitaxial wafer, wherein the model is AZ5214, the photoresist thickness is 0.3 mu m, placing the epitaxial wafer coated with the photoresist on a hot table for prebaking for 45s, then placing the epitaxial wafer into a photoetching machine for exposure for 5s, then immersing the exposed epitaxial wafer into a developing solution, wherein the model of the developing solution is RZX3038, and the immersion time is 60s, so that the pattern on the epitaxial wafer is shown, washing the epitaxial wafer with deionized water, and drying the epitaxial wafer with nitrogen; finally, placing the epitaxial wafer on a hot table, and baking for hardening the film for 45 s;
(4) etching a groove along the Schottky contact electrode pattern in the rectifier epitaxial wafer by using a reactive ion etching method, wherein the depth of the groove is 200 nm;
(5) the obtained product in the step (4) is engraved withPlacing the rectifier epitaxial wafer with Schottky contact electrode pattern groove into electron beam evaporation equipment, and pumping the vacuum degree of the cavity to 5 × 10-5Pa, and then sequentially evaporating electrode metal Ni/Au; after the evaporation is finished, annealing the rectifier epitaxial wafer at 400 ℃ for 60min to obtain a Schottky contact electrode (6);
(6) soaking the prepared rectifier epitaxial wafer of the Schottky contact electrode in a degumming solution for 65min, taking out, washing with deionized water, placing in acetone, performing ultrasonic treatment for 5min, taking out, washing with deionized water, and drying with nitrogen;
(7) repeating the steps (3) and (4), photoetching and developing the surface of the epitaxial wafer to prepare a mesa isolation pattern, etching a groove by using reactive ion etching equipment through the mesa isolation pattern, wherein the etching depth is 250nm, finally cleaning the surface of the epitaxial wafer by using deionized water and drying the surface of the epitaxial wafer by using nitrogen to obtain a mesa isolation groove (5);
(8) manufacturing a mesa isolation passivation layer: placing the rectifier epitaxial wafer into a plasma enhanced chemical vapor deposition device, heating the device to 400 ℃, and pumping the vacuum degree of a cavity to 5 multiplied by 10-5Pa, depositing SiN in etching grooves of rectifier epitaxial waferyDepositing a passivation layer (y is 1.37-1.53) for 75 min;
(9) soaking the prepared rectifier epitaxial wafer in the degumming solution for 63min, taking out, washing with deionized water, placing in acetone, performing ultrasonic treatment for 5min, taking out, washing with deionized water, blow-drying with nitrogen, and removing residual SiN on the surface of the rectifier epitaxial waferyWith the photoresist, only the SiN in the mesa isolation pattern etching groove is reservedy(4) And finishing the preparation of the AlGaN/GaN-based 35GHz millimeter wave rectifier.
The starting voltage of the forward J-V curve of the rectifier epitaxial wafer manufactured by the embodiment is 0.83V, and the calculated specific on-resistance RON is 9.4m omega/sq, so that the stability and reliability of the device are good under the condition of high-power operation. The reverse I-V curve of the epitaxial wafer is shown in FIG. 3, and under a reverse bias of-20V, the leakage current of the device is-0.0005A, and the reverse leakage performance is good. The defect density of this example was measured to be about 3.5X 108cm-2。
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. An AlGaN/GaN-based 35GHz millimeter wave rectifier is characterized in that the structure of the rectifier is sequentially provided with an Al substrate and undoped Al from bottom to topxGa1-xThe N layer and the non-doped GaN layer further comprise a mesa isolation groove and a Schottky contact electrode; the bottom of the mesa isolation groove is positioned at the undoped AlxGa1-xOne side of the N layer is in contact with the non-doped GaN layer, the other side of the N layer is in contact with the Schottky contact electrode, and a layer of SiN is deposited on the inner surface of the table top isolation grooveyA passivation layer; the bottom of the Schottky contact electrode is positioned at the non-doped AlxGa1-xAnd one side of the N layer is in contact with the mesa isolation groove, and the other side of the N layer is the side face of the rectifier, wherein x is 0.15-0.2, and y is 1.37-1.53.
2. The AlGaN/GaN-based 35GHz millimeter wave rectifier according to claim 1, wherein the AlGaN/GaN-based 35GHz millimeter wave rectifier epitaxial wafer is prepared from an Al target and a Ga target by using a pulse laser technology.
3. The AlGaN/GaN-based 35GHz millimeter wave rectifier of claim 1, wherein the undoped Al is doped with AlxGa1-xThe thickness of the N layer is 300-320 nm, and the thickness of the non-doped GaN layer is 20-30 nm.
4. The AlGaN/GaN-based 35GHz millimeter wave rectifier according to claim 1, wherein the mesa isolation groove has a depth of 245-255 nm; the thickness of the Schottky contact electrode is 190-200 nm.
5. The AlGaN/GaN-based 35GHz millimeter wave (mm) device of claim 1The meter-wave rectifier is characterized in that SiN on the inner surface of the mesa isolation grooveyThe thickness of the passivation layer is 8-12 nm.
6. The AlGaN/GaN-based 35GHz millimeter wave rectifier of claim 1, wherein the mesa isolation trench has a bottom length of 95-105 μm and an upper length of 145-155 μm; the length of the bottom of the Schottky contact electrode is 155-165 mu m, and the length of the upper part of the Schottky contact electrode is 115-125 mu m; the AlGaN/GaN-based 35GHz millimeter wave rectifier is 800 microns long.
7. The AlGaN/GaN-based 35GHz mm-wave rectifier according to claim 2, wherein the AlGaN/GaN-based 35GHz mm-wave rectifier epitaxial wafer is manufactured by the following method: growing non-doped Al on an Al substrate by using an Al target and a Ga target as raw materials at room temperature by using a pulse laser technologyxGa1-xN layer, Ga target material as raw material, and non-doped Al layer by PLDxGa1-xAnd growing a non-doped GaN layer on the N layer to obtain the rectifier epitaxial wafer.
8. The method for preparing the AlGaN/GaN-based 35GHz millimeter wave rectifier as claimed in any one of claims 1 to 7, comprising the following steps:
(1) growing non-doped Al on an Al substrate by using an Al target and a Ga target as raw materials at room temperature by using a pulse laser technologyxGa1-xN layer, Ga target material as raw material, and non-doped Al layer by PLDxGa1-xGrowing an undoped GaN layer on the N layer to obtain a rectifier epitaxial wafer, wherein x is 0.15-0.2;
(2) sequentially placing the rectifier epitaxial wafer obtained in the step (1) in acetone and absolute ethyl alcohol for ultrasonic treatment, taking out, washing with deionized water, and drying with nitrogen;
(3) transferring the Schottky contact pattern to the rectifier epitaxial wafer obtained in the step (2): uniformly spin-coating photoresist on the rectifier epitaxial wafer obtained in the step (2), exposing, and cleaning with a developing solution to show the pattern;
(4) etching a groove along the Schottky contact electrode pattern in the rectifier epitaxial wafer obtained in the step (3) by using a reactive ion etching method to obtain a Schottky contact electrode pattern groove;
(5) depositing metal into the Schottky contact electrode pattern groove of the rectifier epitaxial wafer obtained in the step (4) by adopting an evaporation method, and annealing to obtain a Schottky contact electrode;
(6) immersing the rectifier epitaxial wafer obtained in the step (5) into a degumming solution, washing with deionized water, placing in acetone for ultrasonic treatment, and drying with nitrogen;
(7) uniformly spin-coating photoresist on the rectifier epitaxial wafer obtained in the step (6), exposing, cleaning by using a developing solution, preparing a mesa isolation pattern on the surface of the rectifier epitaxial wafer, and etching a groove along the mesa isolation pattern by using a reactive ion etching method;
(8) putting the rectifier epitaxial wafer with the mesa isolation pattern etching groove obtained in the step (7) into plasma enhanced chemical vapor deposition equipment, heating, vacuumizing, introducing carrier gas and reaction gas, and depositing SiN on the surface of the rectifier epitaxial waferyA passivation layer, wherein y is 1.37-1.53;
(9) soaking the surface of the rectifier epitaxial wafer obtained in the step (8) with residual photoresist and SiN through photoresist solution and ultrasonic cleaningyRemoving only SiN in the mesa isolation pattern etching grooveyAnd obtaining the AlGaN/GaN-based 35GHz millimeter wave rectifier.
9. The method according to claim 8, wherein the pulsed laser technology of step (1) has a laser energy of 600 mJ; the environment of the metal deposition in the step (5) is vacuum, and the vacuum degree is 5 multiplied by 10-5Pa; the metal is Ni and Au; the annealing temperature is 400 ℃, and the annealing time is 600 min.
10. Use of an AlGaN/GaN-based 35GHz millimeter wave rectifier as claimed in any of claims 1 to 7.
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