CN114153090B - Reflection substrate, preparation method and measurement method thereof and display panel - Google Patents
Reflection substrate, preparation method and measurement method thereof and display panel Download PDFInfo
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- CN114153090B CN114153090B CN202111437059.3A CN202111437059A CN114153090B CN 114153090 B CN114153090 B CN 114153090B CN 202111437059 A CN202111437059 A CN 202111437059A CN 114153090 B CN114153090 B CN 114153090B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
Abstract
The embodiment of the application provides a reflecting substrate, a preparation method and a measuring method thereof, and a display panel, wherein the reflecting substrate comprises the following components: a substrate; the flat layer is arranged on one side of the substrate, a first protruding structure with key parameters is arranged on the surface of one side, far away from the substrate, of the flat layer in an array mode, and the key parameters are related to the section gradient angle of the first protruding structure; the reflection layer is arranged on one side of the flat layer, which is far away from the substrate, and is provided with a second protruding structure which conformally covers the first protruding structure. According to the embodiment of the application, the cross section gradient angle of the first protruding structure is determined by measuring the key parameters, so that the surface morphology of the flat layer and the reflecting layer is monitored, the material waste caused by scrapping of the reflecting substrate is reduced, the measuring cost of measuring equipment is saved, whether the cross section gradient angle of the reflecting substrate is in a standard range or not is timely and conveniently judged, and the display quality of a display panel manufactured by using the reflecting substrate is further ensured.
Description
Technical Field
The application relates to the technical field of display, in particular to a reflective substrate, a preparation method and a measurement method thereof and a display panel.
Background
With the rise of mobile devices and wearable applications, the demand for light and thin display devices and power saving is increasing. It is becoming more and more important to develop a display device with low power consumption and power saving. The traditional liquid crystal display panel and the organic electroluminescent diode display panel have lower external quantum efficiency or spectral response, lower power consumption and larger input energy loss, and particularly, the liquid crystal display panel has only 30 percent transmittance due to the property of a self color filter color resistance film layer, so that the transmittance of the final panel is less than 10 percent, most of light is lost, and the power consumption is extremely high.
Therefore, the reflective display utilizing the ambient light has extremely high prospect in the field of outdoor display, the field of health reading and children education flat panel display due to the advantages of low energy consumption, eye protection and the like. In the prior art, ambient light in a reflective liquid crystal display panel is reflected by a reflective electrode, and then the reflected light is scattered by a scattering film and is emitted from the surface of an upper substrate, so that picture display is realized. However, the surface morphology of the scattering film cannot be monitored in the preparation process of the scattering film, so that the actual quality of the scattering film is uneven, and the viewing angle uniformity in part of the display panel is poor.
In summary, the display panel of the prior art has: the surface morphology of the scattering film cannot be monitored, and the quality of the scattering film is uneven, so that the technical problem of poor viewing angle uniformity in part of display panels is caused.
Disclosure of Invention
Aiming at the defects of the prior art, the application provides a reflecting substrate, a preparation method and a measuring method thereof, and a display panel, which are used for solving the problems in the display panel in the prior art: the surface morphology of the scattering film cannot be monitored, and the quality of the scattering film is uneven, so that the technical problem of poor viewing angle uniformity in part of display panels is caused.
In a first aspect, an embodiment of the present application provides a reflective substrate, including:
a substrate;
the flat layer is arranged on one side of the substrate, a first protruding structure with key parameters is arranged on the surface of one side, far away from the substrate, of the flat layer in an array mode, and the key parameters are related to the section gradient angle of the first protruding structure;
the reflection layer is arranged on one side of the flat layer, which is far away from the substrate, and is provided with a second protruding structure which conformally covers the first protruding structure.
In some embodiments of the present application, the orthographic projection of the first bump structure on the substrate is a rectangular surface, the rectangular surface includes a first side length and a second side length, the length of the first side length is smaller than the length of the second side length, and the key parameter is the length of the first side length or the interval between two adjacent rectangular surfaces.
In some embodiments of the application, the first side length is no less than 3.5 microns and no greater than 5 microns in length and the second side length is no less than 5 microns and no greater than 8 microns in length.
In some embodiments of the application, the first raised structures have a cross-sectional profile that is trapezoidal, the trapezoid including parallel third and fourth side lengths, the third side length having a length that differs from the fourth side length by no less than 3 microns and no more than 4 microns.
In some embodiments of the present application, the orthographic projection of the first bump structure on the substrate is an ellipsoid or a half ellipsoid, and the key parameter is a plane slope angle of the ellipsoid.
In some embodiments of the present application, the orthographic projection of the first bump structure on the substrate is a hollowed-out rounded triangle, and the key parameter is the area of the orthographic projection.
In some embodiments of the application, the first bump structures are uniformly distributed on the substrate, and the number of the first bump structures is not less than 30.
In some embodiments of the present application, the reflective substrate includes a plurality of display panels, and the first protrusion structure is disposed in a size monitoring area, a frame area, or between two adjacent display panels.
In some embodiments of the application, the planar layer has a thickness of not less than 1.5 microns.
In a second aspect, an embodiment of the present application provides a display panel formed by cutting a reflective substrate according to the first aspect, including:
a substrate including a display area and a size monitoring area;
the flat layer is arranged on one side of the substrate, a first protruding structure with key parameters is arranged on the surface of one side, far away from the substrate, of the flat layer, the key parameters are related to the section gradient angle of the first protruding structure, and the first protruding structure is located in the size monitoring area;
the reflection layer is arranged on one side of the flat layer, which is far away from the substrate, and is provided with a second protruding structure which conformally covers the first protruding structure.
In a third aspect, an embodiment of the present application provides a method for manufacturing a reflective substrate, including:
preparing a flat layer on one side of a substrate;
patterning the surface of one side of the flat layer far away from the bottom to form a first convex structure with key parameters;
preparing a reflective layer on a side of the planar layer remote from the substrate, the reflective layer having a second bump structure conformally covering the first bump structure;
wherein the key parameter is associated with a cross-sectional grade angle of the first bump structure.
In a fourth aspect, an embodiment of the present application provides a measurement method based on the reflective substrate in the first aspect, including:
acquiring a first key parameter of a first convex structure in a reflective substrate to be detected;
and determining a first section gradient angle associated with the first key parameter according to the first key parameter.
In some embodiments of the application, the determining a first section slope angle associated with the first key parameter from the first key parameter includes: measuring a second section slope angle and a second key parameter of a second reflective substrate;
measuring a third cross-sectional slope angle and a third key parameter of a third reflective substrate;
when the first key parameter is not less than the second key parameter and not greater than the third key parameter,
the first section slope angle is not less than the second section slope angle and not greater than the third section slope angle; alternatively, the first section gradient angle is not less than the third section gradient angle and is not greater than the second section gradient angle.
In some embodiments of the application, the measuring the second slope angle and the second key parameter of the second reflective substrate includes: cutting the second reflecting substrate; shooting and measuring the cutting surface through a scanning electron microscope to obtain the second section gradient angle;
and/or, the measuring the third slope angle and the third key parameter of the third reflective substrate comprises: cutting the third reflective substrate; and shooting and measuring the cutting surface by a scanning electron microscope to obtain the third section slope angle.
In some embodiments of the present application, the obtaining the first key parameter of the first bump structure in the reflective substrate to be measured includes: selecting a plurality of subareas in the reflective substrate to be detected;
measuring a first bulge structure in each partition to obtain a plurality of sub-key parameters;
and taking the average value of the plurality of sub-key parameters to obtain the first key parameter.
The technical scheme provided by the embodiment of the application has the beneficial technical effects that: the first protruding structures with the key parameters are arranged on the surface of one side of the flat layer far away from the substrate in an array manner, the key parameters are utilized to be related to the section gradient angles of the first protruding structures, and the section gradient angles of the first protruding structures are determined through measuring the key parameters, so that the monitoring of the surface morphology of the flat layer and the reflecting layer is realized, the material waste caused by scrapping of the reflecting substrate is reduced, the measuring cost of measuring equipment is saved, whether the section gradient angles of the reflecting substrate are in a standard range is timely and conveniently judged, and the display quality of the display panel manufactured by using the reflecting substrate is further ensured. Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic cross-sectional view of a reflective substrate according to one embodiment of the present application;
FIG. 2 is a schematic plan view of a first bump structure according to an embodiment of the present application;
FIG. 3A is an enlarged view of point P of FIG. 2;
FIG. 3B is a schematic cross-sectional view of a first bump structure according to one embodiment of the present application;
FIG. 4 is a schematic plan view of a first bump structure according to another embodiment of the present application;
FIG. 5 is a schematic plan view of a first bump structure according to another embodiment of the present application;
FIG. 6 is a schematic plan view of a first bump structure according to still another embodiment of the present application;
FIG. 7 is a schematic flow chart of a preparation method according to an embodiment of the present application.
In the figure:
1-a substrate; 2-a flat layer; a 3-reflective layer; 4-a barrier layer; a 5-gate insulating layer; 6-an interlayer dielectric layer; 7-a semiconductor layer; an 8-gate layer; 9-source/drain electrode layer.
Detailed Description
The present application is described in detail below, examples of embodiments of the application are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar components or components having the same or similar functions throughout. Further, if detailed description of the known technology is not necessary for the illustrated features of the present application, it will be omitted. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
The inventor of the application researches and discovers that on the basis of making a concave-convex structure on a flat layer by a Resin Bump (Resin Bump) technology, a reflecting layer is plated, and the diffuse reflection effect in different directions is formed by utilizing the gradient angle of the cross section gradually changed at the Bump, so that the uniformity of the visual angle is improved, and the application has great development value for replacing a high-cost scattering film.
The slope angle of the section is taken as the most central parameter of the resin convex structure technology, and once the slope angle exceeds the standard range, the optical characteristics are greatly attenuated. However, an important factor limiting mass production of the display panel of the resin projection structure is that the section gradient angle cannot be monitored. The section gradient angle cannot be determined by the plane morphology, and the current section gradient angle monitoring method is to take a section by using a Scanning electron microscope (Scanning EL1ectron Microscope, SEM) and manually measure the section gradient angle. This approach has the following disadvantages: the cross section scanning electron microscope test can be carried out after the glass substrate is scrapped and sheared, and the scanning electron microscope equipment in a factory is required to be regulated, so that the material waste is caused, and meanwhile, the time cost is required, and the slope angle exceeding standard cannot be monitored in time.
The application provides a reflecting substrate, a preparation method and a measuring method thereof, and a display panel, and aims to solve the technical problems in the prior art. The following describes the technical scheme of the present application and how the technical scheme of the present application solves the above technical problems in detail with specific embodiments.
In a first aspect, embodiments of the present application provide a reflective substrate. Referring to fig. 1, fig. 1 is a schematic cross-sectional view of a reflective substrate according to an embodiment of the application. The reflective substrate comprises a substrate 1, a flat layer 2 and a reflective layer 3.
Specifically, the method comprises the following steps: a substrate 1.
The flat layer 2 is arranged on one side of the substrate 1, and a first protruding structure with key parameters is arranged on the surface of one side, far away from the substrate 1, of the flat layer 2 in an array mode, and the key parameters are related to a section gradient angle theta 1 of the first protruding structure.
The reflecting layer 3 is disposed on a side of the flat layer 2 away from the substrate 1, and has a second bump structure conformally covering the first bump structure.
In some embodiments, the reflective substrate further includes a barrier layer 4, a gate insulating layer 5, and an interlayer dielectric layer 6, which are sequentially stacked, disposed on one side of the substrate 1; the semiconductor layer 7 is arranged in the gate insulating layer 5, the gate layer 8 is arranged between the gate insulating layer 5 and the interlayer dielectric layer 6, the source/drain electrode layer 9 is arranged on one side of the interlayer dielectric layer 6 far away from the gate insulating layer 5, and at least part of the source/drain electrode layer 9 penetrates through the interlayer dielectric layer 6 and the gate insulating layer 5 to be electrically connected with the semiconductor layer 7.
The flat layer 2 is arranged on one side of the interlayer dielectric layer 6 far away from the gate insulating layer 5 and coats the source drain electrode layer 9, and the surface of one side of the flat layer 2 far away from the substrate 1 is rugged to form a plurality of first protruding structures and at least one through hole exposing the source drain electrode layer 9. The reflective layer 3 is disposed on a side of the planarization layer 2 away from the substrate 1 and is electrically connected to the source/drain layer 9 through a via hole, and the reflective layer 3 has a second bump structure conformally covering the first bump structure.
In some embodiments provided herein, the first bump structure has a cross-sectional slope angle θ1 of not less than 6 degrees and not more than 12 degrees.
The same reflecting substrate comprises a plurality of first protruding structures which are arranged in an array, and the section gradient angles of the different first protruding structures can be the same or different. In one embodiment, the plurality of first bump structures form first bump structures having a gradual change in cross-sectional slope angle according to a distance from the light source. The cross-sectional slope angles θ1 of the first bump structures satisfy the range of θ1 and θ1, respectively, and once θ1 does not satisfy the range, the optical performance of the reflective substrate is greatly attenuated, such as the reflectivity is greatly reduced, thereby affecting the light transmittance of the display panel.
In some embodiments provided by the present application, the thickness of the planar layer 2 is not less than 1.5 microns.
In some embodiments, the material of the planarization layer 2 includes a resin material, specifically, the material of the planarization layer 2 is acrylic (AcryL 1). The flat layer 2 comprises an insulating material, the thickness of the flat layer 2 is larger than or equal to 1.5 mu m, and the area outside the through hole is avoided, short circuit is generated between the reflecting layer 3 and the source drain electrode layer 9, or crosstalk is generated due to too close distance between the reflecting layer 3 and the source drain electrode layer 9, so that a display picture flickers.
In some embodiments, the structure of the reflective layer 3 includes at least a first transparent conductive layer, a reflective metal, and a second transparent conductive layer composite film layer laminated in order, specifically, the materials of the first transparent conductive layer and the second transparent conductive layer are conductive glass, and the material of the reflective metal includes silver (Ag). The first transparent conductive layer is in adhesive connection with the flat layer 2, so that the reflection layer 3 and the flat layer 2 are prevented from falling off; the second transparent conductive layer protects the reflective metal, prevents the reflective metal from being damaged or oxidized in the subsequent process, and avoids the influence on the optical performance due to the reduction of reflectivity caused by the damage or oxidation of the reflective metal; silver is suitable for being used as reflective metal due to high reflectivity, so that reflection of natural light or incident light of other external light sources is realized, diffuse reflection of the reflected light is realized through the second convex structure, and viewing angle uniformity of the display panel is improved.
In some embodiments provided by the present application, the orthographic projection of the first bump structure on the substrate 1 is a rectangular surface, the rectangular surface includes a first side length CD2 and a second side length L1, the length of the first side length CD2 is smaller than the length of the second side length L1, and the key parameter is the length of the first side length CD2 or the distance CD1 between two adjacent rectangular surfaces.
In the present embodiment, the process of preparing the planarization layer 2 includes coating photoresist, exposing, developing, etching, and the like. Since the etching solution is sprayed on the surface of the flat layer 2 far from the substrate 1 in the wet etching, when the etching solution corrodes to the lower side of the flat layer 2 in fig. 1, the etching solution also corrodes to the left and right sides in fig. 1 at the opposite upper side, that is, side corrosion occurs, so that the upper surface area of the first bump structure is smaller than the lower surface area.
Fig. 2 is a schematic plan view of a first bump structure according to an embodiment of the present application, fig. 3A is an enlarged view of a point P in fig. 2, and fig. 3A-3B is a schematic sectional view of the first bump structure according to an embodiment of the present application.
As shown, CD2 is the first side length of the rectangular faces, CD1 is the spacing between two adjacent rectangular faces, and θ1 is the cross-sectional slope angle of the first bump structure. In one embodiment, the preset pattern is a rectangular surface, i.e. the orthographic projection of the first bump structure on the substrate 1 is a rectangular surface, the rectangular surface comprises a first side length parallel to the first direction and a second side length parallel to the second direction, CD2 < L1. The first protruding structures are arranged in an array mode, and the distance between two adjacent rectangular surfaces in the first direction is CD1. In actual production, CD2 and CD1 can be easily obtained by using the CD measurement device without spending much time and cost, while CD2 is associated with θ1, CD1 is associated with θ1, and θ1 can be obtained according to at least one of CD2 and CD1, so as to determine whether the reflective substrate meets the standard range.
In some embodiments provided herein, the length CD2 of the first side length is not less than 3.5 microns and not greater than 5 microns, and the length L1 of the second side length is not less than 5 microns and not greater than 8 microns.
In this embodiment, the rectangular face has a first side length CD2 and a spacing CD1 that are easier to measure relative to other patterns, including circular faces. In order to ensure that the front projection of the first bump structure is rectangular, but not circular, CD2 is more than or equal to 3.5 μm and CD1 is more than or equal to 5 μm. In order to facilitate more first bulge structures to be distributed in a unit area, the display effect is improved; and in order to occupy smaller arrangement area with the same number of first bump structures, space is reserved for other components or areas, such as more size monitoring areas. CD2 is less than or equal to 5 mu m, and L1 is less than or equal to 8 mu m. In summary, the first side length CD2 and the second side length L1 satisfy CD2 of 3.5 μm.ltoreq.CD2.ltoreq.5μm.ltoreq.L1.ltoreq.8μm.
In some embodiments of the present application, the first bump structure has a trapezoidal cross-sectional profile, the trapezoid including a third side length L2 and a fourth side length CD2 that are parallel, and a difference between a length of the third side length L2 and a length of the fourth side length CD2 is not less than 3 microns and not more than 4 microns.
In this embodiment, the length of the fourth side length and the length of the first side length are both CD2. Due to the influence of the undercut effect, the etching amount on the lower side in fig. 3B is slightly smaller than that on the upper side, and the cross-sectional profile of the first bump structure is trapezoidal. The trapezoid comprises a third side length L2 and a fourth side length CD2 which are parallel, and two sloping sides, wherein the length of the third side length L2 on the upper side is smaller than that of the fourth side length CD2 on the lower side, and the difference between the third side length L2 and the fourth side length CD2 is smaller than or equal to 3 mu m and smaller than or equal to CD2-L2 and smaller than or equal to 4 mu m.
It will be appreciated that since the second raised structures of the reflective layer 3 conformally cover the first raised structures of the planar layer 2, the cross-sectional slope angles of the first raised structures are equal to the cross-sectional slope angles of the second raised structures. Although the structure of the display panel mainly playing a role of scattering is the second protruding structure, the optical performance of the second protruding structure can be judged by measuring the section gradient angle of the first protruding structure. And because the flat layer 2 and the reflecting layer 3 are prepared firstly and then the reflecting layer 3 is prepared in the process, the section gradient angle of the first convex structure can be measured and judged after the preparation of the flat layer 2 is finished, and unqualified products can be repaired or scrapped in time, so that the waste of time and cost is avoided after the completion of the reflecting layer 3.
It should be noted that, the slope angle of the section referred to in the present application refers to the included angle formed by the inclined plane or the tangential plane and the horizontal plane of the first protrusion structure at the half height.
In some embodiments provided by the present application, the orthographic projection of the first bump structure on the substrate 1 is an ellipsoid or a half ellipsoid, and the key parameter is the planar slope angle of the ellipsoid.
As shown in fig. 4 and 5, fig. 4 is a schematic plan view of a first bump structure according to another embodiment of the present application; fig. 5 is a schematic plan view of a first bump structure according to still another embodiment of the present application.
In one embodiment, the preset pattern is a diamond, and due to the limitation of the manufacturing process, the four corners of the diamond are provided with materials which are not etched completely, the orthographic projection of the first raised structure is an ellipsoid, the key parameter is a plane gradient angle theta 2 of the ellipsoid, and the plane gradient angle theta 2 of the ellipsoid is an included angle between oblique lines and horizontal lines at half of the ellipse. The plane gradient angle θ2 is correlated with the section gradient angle θ1.
In another embodiment, the preset pattern is a half ellipse, the orthographic projection of the first bump structure is a half ellipse, the key parameter is a plane gradient angle θ2 of one side of the ellipse of the half ellipse, and the plane gradient angle θ2 of one side of the ellipse is an included angle between a slope and a horizontal line at half height of the half ellipse. The plane gradient angle θ2 is correlated with the section gradient angle θ1.
In some embodiments provided by the present application, the orthographic projection of the first bump structure on the substrate 1 is a hollowed-out rounded triangle, and the key parameter is the orthographic projection area.
Fig. 6 is a schematic plan view of a first bump structure according to still another embodiment of the present application, as shown in fig. 6.
In this embodiment, the preset pattern is a hollowed triangle, and due to the limitation of the manufacturing process, the three corners of the inner triangle are made of unetched materials, the orthographic projection of the first bump structure is a hollowed rounded triangle, and the key parameter is the orthographic projection area S. The forward projection area S is associated with the section gradient angle θ1.
In summary, it is found that the cross-section gradient angle θ1 is generated due to the side etching effect, and the magnitude of the cross-section gradient angle θ1 is related to the exposure energy and the development time of the exposure machine, and since the cross-section gradient angle θ1 is difficult to directly measure, other parameters related to the exposure energy and the development time of the exposure machine and convenient to directly measure are selected and named as key parameters in the embodiment of the application. The preset patterns include, but are not limited to, rectangular, diamond, half oval, hollowed-out triangle, square, round, trapezoid, etc. Key parameters include, but are not limited to, critical dimensions CD2, CD1, plane slope angle θ2, and orthographic projection area S.
The matching rule of the key parameters and the section gradient angle theta 1 is as follows: the larger the part of the key parameters, for example, the larger the CD1, the larger at least one of the exposure amount and the development time, the larger the section gradient angle θ1; the smaller the part of the key parameters, for example, the smaller the CD2, the larger at least one of the exposure amount and the development time, and the larger the section gradient angle θ1.
In some embodiments provided by the present application, the first bump structures are uniformly distributed on the substrate 1, and the number of the first bump structures is not less than 30.
In this embodiment, the reflective substrate is uniformly divided into at least thirty sections, and each section includes at least one first bump structure. And selecting one first bulge structure from each partition as a sampling point, measuring sub-key parameters of at least thirty first bulge structures, averaging the at least thirty sub-key parameters to obtain key parameters, and obtaining the section gradient angle of the reflecting substrate according to the key parameters.
In some embodiments of the present disclosure, the reflective substrate includes a plurality of display panels, and the first protrusion structure is disposed in a monitor area, a frame area, or between two adjacent display panels.
In this embodiment, the first bump structure needs to avoid important devices in the display panel, such as the display area and the fan-out area, which cannot be set, so as to prevent the preparation and performance of other devices from being affected. The first bump structure should be disposed in other areas that do not affect the arrangement of the display panels, including but not limited to a size monitoring area, a border area of the display panels, or disposed between two adjacent display panels. The size monitoring area is originally set to measure parameters such as the width of the electrode on the circuit board, the distance between adjacent electrodes, and the thickness of the film layer, and in this embodiment, the size monitoring area is just multiplexed to measure key parameters of the first bump structure, so as to avoid interference to the display device.
Based on the same inventive concept, in a second aspect, the present application provides a display panel formed by cutting the reflective substrate according to the first aspect, including:
the substrate 1 comprises a display area and a size monitoring area.
The flat layer 2 is arranged on one side of the substrate 1, a first protruding structure with key parameters is arranged on the surface of one side, far away from the substrate 1, of the flat layer 2, the key parameters are related to a section gradient angle theta 1 of the first protruding structure, and the first protruding structure is located in the size monitoring area.
The reflecting layer 3 is disposed on a side of the flat layer 2 away from the substrate 1, and has a second bump structure conformally covering the first bump structure.
In this embodiment, the reflective substrate is cut to form a plurality of display panels, and the first bump structure disposed between two adjacent display panels is worn out, and measurement cannot be continued in the display panels. The display panel comprises a display area close to the center, a frame area surrounding the display area and size monitoring areas positioned at four corners of the frame area. At least one of the size monitoring areas in each display panel is provided with a first protruding structure.
Based on the same inventive concept, in a third aspect, the present application provides a method for manufacturing a reflective substrate. FIG. 7 is a schematic flow chart of the preparation method according to an embodiment of the present application. The preparation method comprises the following steps:
s1, preparing a flat layer 2 on one side of a substrate 1;
s2, patterning the surface of one side of the flat layer 2 far away from the substrate 1 to form a first protruding structure with key parameters;
s3, preparing a reflecting layer 3 on one side of the flat layer 2 far away from the substrate 1, wherein the reflecting layer 3 is provided with a second convex structure which conformally covers the first convex structure;
wherein the key parameter is associated with a cross-sectional slope angle θ1 of the first bump structure.
Based on the same inventive concept, in a fourth aspect, the present application provides a measurement method based on the reflective substrate described in the first aspect. The measuring method comprises the following steps:
acquiring a first key parameter of a first convex structure in a reflective substrate to be detected;
a first section grade angle θ1 associated with the first key parameter is determined from the first key parameter.
In some embodiments provided by the present application, determining a first section grade angle associated with a first key parameter from the first key parameter includes: a second cross-sectional grade angle θ1 and a second key parameter of the second reflective substrate are measured.
And measuring a third section gradient angle theta 1 of the third reflective substrate and a third key parameter.
When the first key parameter is not smaller than the second key parameter and not larger than the third key parameter, the first section gradient angle theta 1 is not smaller than the second section gradient angle theta 1 and not larger than the third section gradient angle theta 1; alternatively, the first section gradient angle θ1 is not smaller than the third section gradient angle θ1 and not larger than the second section gradient angle θ1.
The key parameters of at least two reflective substrates and the cross-sectional grade angle θ1 are measured. And when the two section gradient angles theta 1 respectively take the maximum value and the minimum value in the standard range of the section gradient angle theta 1, measuring or calculating to obtain the maximum value and the minimum value of the key parameter, namely obtaining the standard range of the key parameter. And comparing whether the first key parameter is in the standard range of the key parameter so as to judge whether the first section gradient angle theta 1 is in the standard range of the section gradient angle theta 1.
In a specific embodiment, the standard range of the section gradient angle θ1 is not less than 6 ° and not more than 12 °, and θ1=6° and θ1=12° are measured or calculated to respectively correspond to cd2=7.2 μm and cd2=5.5 μm. In the subsequent size monitoring, CD2 of the reflecting substrate to be detected is compared with 5.5-7.2 mu m, and whether the first section gradient angle theta 1 is between 6 DEG and 12 DEG can be judged.
In another specific embodiment, a second cd2=5.2 μm, a second cross-sectional slope angle θ1=13°, a third cd2=6.7 μm, and a third cross-sectional slope angle θ1=8° of the second reflective substrate are measured. Acquiring a first CD2 = 6.3 mu m of a reflecting substrate to be detected, wherein the second CD2 is smaller than the first CD2 and smaller than the third CD2, so that the first section gradient angle theta 1 meets the following conditions: the first section gradient angle theta 1 is less than 13 degrees. It was found that the first section gradient angle θ1=9.5° complies with the above law.
In one embodiment, the measuring the second cross-sectional slope angle θ1 and the second key parameter of the second reflective substrate comprises: cutting the second reflective substrate; and shooting and measuring the cutting surface by a scanning electron microscope to obtain a second section gradient angle theta 1.
In another embodiment, the measuring the third cross-sectional slope angle θ1 and the third key parameter of the third reflective substrate comprises: cutting the third reflective substrate; and shooting and measuring the cut surface by a scanning electron microscope to obtain a third section gradient angle theta 1.
In yet another embodiment, measuring the second cross-sectional slope angle θ1 and the second key parameter of the second reflective substrate comprises: cutting the second reflective substrate; shooting and measuring the cutting surface by a scanning electron microscope to obtain a second section gradient angle theta 1; and including in measuring a third cross-sectional grade angle θ1 and a third key parameter of the third reflective substrate: cutting the third reflective substrate; and shooting and measuring the cut surface by a scanning electron microscope to obtain a third section gradient angle theta 1.
In some embodiments of the present application, obtaining the first key parameter of the first bump structure in the reflective substrate to be measured includes: selecting a plurality of subareas in the reflective substrate to be tested;
measuring a first bulge structure in each partition to obtain a plurality of sub-key parameters;
and taking the average value of the plurality of sub-key parameters to obtain a first key parameter.
In another embodiment, measuring the second section grade angle θ1 and the second key parameter includes: and selecting a plurality of subareas, measuring a plurality of first convex structures, and taking the average value to obtain a second section gradient angle theta 1 and a second key parameter. The third section gradient angle θ1 and the third key parameter are measured to obtain the average value in the same way, and the details are not repeated here.
By applying the embodiment of the application, at least the following beneficial effects can be realized: the first protruding structures with the key parameters are arranged on the surface of one side of the flat layer far away from the substrate in an array manner, the key parameters are utilized to be related to the section gradient angles of the first protruding structures, and the section gradient angles of the first protruding structures are determined through measuring the key parameters, so that the monitoring of the surface morphology of the flat layer and the reflecting layer is realized, the material waste caused by scrapping of the reflecting substrate is reduced, the measuring cost of measuring equipment is saved, whether the section gradient angles of the reflecting substrate are in a standard range is timely and conveniently judged, and the display quality of the display panel manufactured by using the reflecting substrate is further ensured.
Those of skill in the art will appreciate that the various operations, methods, steps in the flow, acts, schemes, and alternatives discussed in the present application may be alternated, altered, combined, or eliminated. Further, other steps, means, or steps in a process having various operations, methods, or procedures discussed herein may be alternated, altered, rearranged, disassembled, combined, or eliminated. Further, steps, measures, schemes in the prior art with various operations, methods, flows disclosed in the present application may also be alternated, altered, rearranged, decomposed, combined, or deleted.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present application and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In the description of the present specification, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments or examples.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited in order and may be performed in other orders, unless explicitly stated herein. Moreover, at least some of the steps in the flowcharts of the figures may include a plurality of sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order of their execution not necessarily being sequential, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.
The foregoing is only a partial embodiment of the present application, and it should be noted that it will be apparent to those skilled in the art that modifications and adaptations can be made without departing from the principles of the present application, and such modifications and adaptations are intended to be comprehended within the scope of the present application.
Claims (14)
1. A reflective substrate, comprising:
a substrate;
the flat layer is arranged on one side of the substrate, a first protruding structure with key parameters is arranged on the surface of one side, far away from the substrate, of the flat layer in an array mode, and the key parameters are related to the section gradient angle of the first protruding structure;
the reflection layer is arranged on one side of the flat layer, which is far away from the substrate, and is provided with a second protruding structure which conformally covers the first protruding structure;
the orthographic projection of the first protruding structure on the substrate is a rectangular surface, the rectangular surface comprises a first side length and a second side length, the length of the first side length is smaller than that of the second side length, and the key parameter is the length of the first side length or the distance between two adjacent rectangular surfaces.
2. The reflective substrate of claim 1 wherein the first side has a length of not less than 3.5 microns and not greater than 5 microns and the second side has a length of not less than 5 microns and not greater than 8 microns.
3. The reflective substrate of claim 1 wherein the first raised structures have a cross-sectional profile that is trapezoidal, the trapezoid comprising parallel third and fourth side lengths, the third side length having a length that differs from the fourth side length by no less than 3 microns and no more than 4 microns.
4. The reflective substrate of claim 1 wherein the orthographic projection of the first raised structure onto the substrate is an ellipsoid or a half ellipsoid, and the key parameter is a planar slope angle of the ellipsoid.
5. The reflective substrate of claim 1, wherein an orthographic projection of said first bump structure on said substrate is a hollowed-out rounded triangle, and said critical parameter is an area of said orthographic projection.
6. The reflective substrate of claim 1 wherein said first bump structures are uniformly distributed on said substrate and the number of said first bump structures is not less than 30.
7. The reflective substrate of claim 1, wherein said reflective substrate comprises a plurality of display panels, said first raised structures being disposed in a size-monitoring area, a border area, or between two adjacent ones of said display panels.
8. The reflective substrate of claim 1 wherein the planar layer has a thickness of not less than 1.5 microns.
9. A display panel cut from the reflective substrate according to any one of claims 1-8, comprising:
a substrate including a display area and a size monitoring area;
the flat layer is arranged on one side of the substrate, a first protruding structure with key parameters is arranged on the surface of one side, far away from the substrate, of the flat layer, the key parameters are related to the section gradient angle of the first protruding structure, and the first protruding structure is located in the size monitoring area;
the reflection layer is arranged on one side of the flat layer, which is far away from the substrate, and is provided with a second protruding structure which conformally covers the first protruding structure.
10. A method of manufacturing a reflective substrate, comprising:
preparing a flat layer on one side of a substrate;
patterning the surface of one side of the flat layer far away from the substrate to form a first protruding structure with key parameters, wherein the orthographic projection of the first protruding structure on the substrate is a rectangular surface, the rectangular surface comprises a first side length and a second side length, the length of the first side length is smaller than that of the second side length, and the key parameters are the length of the first side length or the interval between two adjacent rectangular surfaces;
preparing a reflective layer on a side of the planar layer remote from the substrate, the reflective layer having a second bump structure conformally covering the first bump structure;
wherein the key parameter is associated with a cross-sectional grade angle of the first bump structure.
11. A measurement method based on the reflective substrate according to any one of claims 1 to 8, comprising:
acquiring a first key parameter of a first convex structure in a reflective substrate to be detected;
and determining a first section gradient angle associated with the first key parameter according to the first key parameter.
12. The measurement method of claim 11, wherein the determining a first cross-sectional grade angle associated with the first key parameter from the first key parameter comprises: measuring a second section slope angle and a second key parameter of a second reflective substrate;
measuring a third cross-sectional slope angle and a third key parameter of a third reflective substrate;
when the first key parameter is not less than the second key parameter and not greater than the third key parameter,
the first section slope angle is not less than the second section slope angle and not greater than the third section slope angle; alternatively, the first section gradient angle is not less than the third section gradient angle and is not greater than the second section gradient angle.
13. The method of measuring of claim 12, wherein the measuring the second slope angle and the second key parameter of the second reflective substrate comprises: cutting the second reflecting substrate; shooting and measuring the cutting surface through a scanning electron microscope to obtain the second section gradient angle;
and/or, the measuring the third slope angle and the third key parameter of the third reflective substrate comprises: cutting the third reflective substrate; and shooting and measuring the cutting surface by a scanning electron microscope to obtain the third section slope angle.
14. The method according to claim 11, wherein the obtaining the first key parameter of the first bump structure in the reflective substrate to be measured includes: selecting a plurality of subareas in the reflective substrate to be detected;
measuring one first bulge structure in each partition to obtain a plurality of sub-key parameters;
and taking the average value of the plurality of sub-key parameters to obtain the first key parameter.
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