CN114152803A - Power detection circuit of high-resistance microstrip line structure - Google Patents
Power detection circuit of high-resistance microstrip line structure Download PDFInfo
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- CN114152803A CN114152803A CN202111186814.5A CN202111186814A CN114152803A CN 114152803 A CN114152803 A CN 114152803A CN 202111186814 A CN202111186814 A CN 202111186814A CN 114152803 A CN114152803 A CN 114152803A
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Abstract
The invention provides a power detection circuit with a high-resistance microstrip line structure, wherein a power sampling circuit of the power detection circuit is respectively connected with a feed circuit and a power rectification circuit, and a detection filter circuit is connected with the output end of the power rectification circuit; the first end of a high-resistance microstrip line of the power sampling circuit is connected with the radio-frequency signal output end of the power amplifier and the first end of the output matching structure, the second end of the high-resistance microstrip line is connected with the first end of the first capacitor, and the second end of the high-resistance microstrip line is respectively connected with the input ends of the feed circuit and the power rectifying circuit; one end of the feed circuit is connected with a reference voltage source, and the other end of the feed circuit is connected with the first capacitor and the input end of the power rectification circuit; the power rectification circuit transmits the signal to the detection filter circuit to detect and filter the high-frequency signal. The invention can reduce the load effect on the power amplifier, thereby achieving the purposes of improving the efficiency of the whole power amplifier circuit and reducing the area of a chip, and improving the power detection accuracy of the power detection circuit in high and low temperature environments.
Description
Technical Field
The invention relates to the technical field of radio frequency signal detection, in particular to a power detection circuit of a high-resistance microstrip line structure.
Background
The power detection circuit has wide application in the fields of wireless communication, satellite navigation and the like, and aims to judge whether the transmitting/receiving power of a radio frequency signal is normal or not so as to ensure the reliability of communication and whether a power amplifier chip is in a mismatch state or not and protect the power amplifier chip.
However, the conventional power detection circuit has some problems, which are difficult to satisfy the application of satellite communication and navigation systems, for example, a power detection circuit is described in the chinese patent application "a radio frequency detection circuit" with publication No. CN106405222A and publication No. 2017, 2, month and 15. The sampling signal detection point of the power detection circuit is arranged at the input end of a radio frequency power amplifier, and because the signal swing amplitude of the input end of the power amplifier is small, in order to enable the sampling signal to drive a rectifying circuit, a primary amplifying circuit is inserted between a sampling point and the rectifying circuit to amplify the sampling signal and then drive the rectifying circuit, so that two main defects are caused, the area of a chip is increased for the first time, and extra power consumption is consumed for the second time. The second recorded detection voltage has a great defect that the sampling point is arranged at the input end of the power amplifier, and the output power of the power amplifier under the matching condition can only be indirectly detected. The output load of the power amplifier is a situation that there is an open circuit, a short circuit, or a load mismatch of the power amplifier, under such a condition, the input of the power amplifier can still receive the power output by the driving stage, but the output has no power. However, the detection circuit can detect normal power and output detection voltage, which is contrary to the actual situation and cannot correctly reflect the output power of the power amplifier.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a power detection circuit with a high-resistance microstrip line structure, wherein a high-resistance microstrip line is arranged in a power sampling circuit, a power signal is directly collected from a radio frequency power amplifier port by using the high-resistance microstrip line, and the load effect on the power amplifier port can be reduced due to the high characteristic impedance of the high-resistance microstrip line; an indirect microstrip coupling type structure is not needed, so that the aims of improving the efficiency of the whole power amplifier circuit and reducing the area of a chip are fulfilled; and secondly, a constant bias current is provided for the power rectifying circuit through the feed circuit, so that the power detection accuracy of the power detection circuit under the high-temperature and low-temperature environment is improved.
In order to solve the above problems, the present invention adopts a technical solution as follows: a kind of high-resistance microstrip line structure's power detection circuit, the said high-resistance microstrip line structure's power detection circuit includes: the power sampling circuit is respectively connected with the feed circuit and the power rectifying circuit, and the detection filtering circuit is connected with the output end of the power rectifying circuit; the power sampling circuit comprises a high-resistance microstrip line and a first capacitor, wherein the first end of the high-resistance microstrip line is connected with the radio-frequency signal output end of the power amplifier and the first end of the output matching structure, the second end of the high-resistance microstrip line is connected with the first end of the first capacitor, the second end of the high-resistance microstrip line is respectively connected with the input ends of the feed circuit and the power rectifying circuit, the power sampling circuit samples the output power of the power amplifier and transmits the sampled power signal to the feed circuit and the power rectifying circuit; one end of the feed circuit is connected with a reference voltage source, the other end of the feed circuit is connected with the first capacitor and the input end of the power rectification circuit, and constant bias current is provided for the power rectification circuit through the feed circuit; the power rectifying circuit rectifies the power signal to generate a direct current signal and a high-frequency alternating current signal, and transmits the signals to the detection filter circuit to detect and filter the high-frequency signals.
Furthermore, the power sampling circuit further includes a first resistor, a first end of the first resistor is connected to the second end of the high-resistance microstrip line, a second end of the first resistor is connected to the first end of the first capacitor, and a second end of the output matching structure outputs the radio frequency signal.
Further, the feeding circuit comprises a first diode, wherein the cathode of the first diode is connected with the second end of the first capacitor, and the anode of the first diode is connected with the reference voltage source.
Furthermore, the feed circuit further comprises a first triode and a second triode, wherein the base electrode and the collector electrode of the first triode are mutually connected, the collector electrode of the first triode is connected with the anode of the first diode, the collector electrode of the second triode is connected with the emitter electrode of the first triode and the collector electrode of the second triode, and the emitter electrode of the second triode is grounded.
Furthermore, the feed circuit further comprises a second resistor, wherein a first end of the second resistor is connected with the reference voltage source, and a second end of the second resistor is connected with a base electrode and a collector electrode of the first triode.
Furthermore, the feed circuit further comprises a third resistor, wherein a first end of the third resistor is connected with the reference voltage source, and a second end of the third resistor is connected with a second end of the first capacitor.
Further, the power rectification circuit comprises a third triode, wherein a base electrode and a collector electrode of the third triode are connected with each other, the base electrode is connected with the second end of the first capacitor, and an emitter electrode is connected with the input end of the power rectification circuit.
Furthermore, the power sampling circuit comprises a second capacitor and a fifth resistor, wherein the first end of the second capacitor is connected with the output end of the power rectifying circuit, the second end of the second capacitor is grounded, the first end of the fifth resistor is connected with the first end of the second capacitor and the power detection voltage output end, and the second end of the fifth resistor is grounded.
Furthermore, the detection filter circuit further comprises a second diode, a third diode, a fourth diode and a fifth diode, wherein the cathode of the fifth diode is grounded, the anode of the fifth diode is connected with the cathode of the fourth diode, the anode of the fourth diode is connected with the cathode of the third diode, the anode of the third diode is connected with the first end of the second capacitor and the cathode of the second diode, and the anode of the second diode is grounded.
Furthermore, the detection filter circuit further comprises a fourth resistor, a first end of the fourth resistor is connected with the output end of the power rectification circuit, and a second end of the fourth resistor is connected with the first end of the second capacitor.
Compared with the prior art, the invention has the beneficial effects that: the high-resistance microstrip line is used for directly collecting power signals from the radio frequency power amplifier port, and the load effect on the power amplifier port can be reduced due to the high characteristic impedance of the high-resistance microstrip line; an indirect microstrip coupling type structure is not needed, so that the aims of improving the efficiency of the whole power amplifier circuit and reducing the area of a chip are fulfilled; and secondly, constant bias current is provided for the power rectifying circuit through the feed circuit, so that the power detection accuracy of the power detection circuit with the high-resistance microstrip line structure under the high-temperature and low-temperature environment is improved.
Drawings
FIG. 1 is a diagram of a power detection circuit with a high resistance microstrip line structure according to an embodiment of the present invention;
fig. 2 is a circuit diagram of a power detection circuit of a high resistance microstrip line structure according to an embodiment of the present invention.
In the figure: 100. a power sampling circuit; 101. a feed circuit; 102. a power rectifying circuit; 103. a detection filter circuit; TL1, high-resistance microstrip line; c1, a first capacitance; r1, a first resistor; d1, a first diode; q1, the first triode; q2, the second triode; r2, a second resistor; r3, third resistor; q3, third triode; c2, a second capacitor; r5, fifth resistor; d2, a second diode; d3, a third diode; d4, a fourth diode; d5, a fifth diode; r4 and a fourth resistor.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
Referring to fig. 1-2, fig. 1 is a structural diagram of a power detection circuit of a high resistance microstrip line structure according to an embodiment of the present invention; fig. 2 is a circuit diagram of an embodiment of a power detection circuit of a high-resistance microstrip line structure according to the present invention, and the power detection circuit of the high-resistance microstrip line structure according to the present invention is described in detail with reference to fig. 1 and fig. 2.
In this embodiment, the power detection circuit of the high-resistance microstrip line structure includes: the power sampling circuit 100 is respectively connected with the feed circuit 101 and the power rectifying circuit 102, and the detection filtering circuit 103 is connected with the output end of the power rectifying circuit 102; the power sampling circuit 100 comprises a high-resistance microstrip line TL1 and a first capacitor C1, wherein a first end of the high-resistance microstrip line TL1 is connected with a radio-frequency signal output end of the power amplifier and a first end of an output matching structure, a second end of the high-resistance microstrip line TL1 is connected with a first end of the first capacitor C1, the second end of the high-resistance microstrip line TL1 is respectively connected with input ends of the feed circuit 101 and the power rectifying circuit 102, the power sampling circuit 100 samples output power of the power amplifier and transmits the sampled power signal to the feed circuit 101 and the power rectifying circuit 102; one end of the feed circuit 101 is connected with a reference voltage source, the other end of the feed circuit is connected with the first capacitor C1 and the input end of the power rectification circuit 102, and constant bias current is provided for the power rectification circuit 102 through the feed circuit 101; the power rectifying circuit 102 rectifies the power signal to generate a direct current signal and a high-frequency alternating current signal, and transmits the signals to the detection filter circuit 103 to detect and filter the high-frequency signals. The power sampling circuit 100 is directly coupled to the last stage of the power amplifier to directly perform power sampling, the sampled signal is transmitted to the power rectifying circuit 102 to be rectified and converted, the rectified signal is transmitted to the detection filter circuit 103 to be processed and then converted into direct-current voltage to be supplied to a rear-end ADC (analog-digital conversion circuit) to be collected, the feed circuit 101 provides a static working point for the whole power detecting circuit, and compensation can be provided at the full temperature of-40 ℃ to 85 ℃, so that the detection power of the power detecting circuit cannot be changed due to the change of the temperature.
In this embodiment, the power sampling circuit 100 further includes a first resistor R1, a first end of the first resistor R1 is connected to a second end of the high impedance microstrip line TL1, a second end of the first resistor R1 is connected to a first end of the first capacitor C1, and a second end of the output matching structure outputs the radio frequency signal.
The power sampling mode in the power detection circuit comprises a direct power sampling mode and a coupled power sampling mode. In a high-power amplifier circuit, the power sampling circuit 100 usually adopts coupling sampling to reduce the influence on the load of the power amplifier, and a small amount of power signals are coupled out and transmitted to the power detection circuit, so as to convert the detection voltage. However, the coupler is a passive device, and needs to occupy a larger layout area when being implemented on a chip, which is not beneficial to the miniaturization of a power amplifier chip. The invention avoids adopting the coupler to sample power, greatly reduces the chip layout area, improves the integration level and can achieve the purpose of sampling the same coupler power.
The power sampling circuit 100 of the present invention is directly mounted on the output terminal of the power amplifier through the P1 node, wherein the high-resistance microstrip line TL1 is directly connected with the output port of the power amplifier. At node P1, the output matching structure and the power sampling circuit 100 are connected in parallel relationship, both acting as a load to the power amplifier from which power is drawn. If the radio frequency input impedance of the output matching structure is far smaller than the input impedance of the power sampling circuit 100, most of the power output by the power amplifier is transmitted to the output matching structure, and only a small amount of power is transmitted to the power sampling circuit 100, based on the principle, as long as the radio frequency input impedance of the power sampling circuit 100 at the P1 node is far larger than the radio frequency impedance of the output matching structure at the P1 node, a good isolation effect can be realized, and the same power attenuation effect as that of a coupler can be achieved. In order to realize that the power sampling circuit 100 presents higher radio frequency input impedance at the node P1, the present invention achieves this requirement by using the high-resistance microstrip line TL 1.
Under the bias condition of the circuit, the power rectifying circuit 102 generally presents a low rf input impedance in the rf frequency band, and the impedance magnitude is the same order of magnitude as the input impedance of the output matching structure, so that the node P2 of the rectifying circuit cannot be directly mounted on the node P1 in the rf frequency band. In order to enable the power sampling circuit 100 to be in a high-impedance state at a node P1, a low impedance of the power rectifying circuit 102 at the node P2 is pulled to be in a high-impedance state at a node P1 through the first resistor R1 and the high-impedance microstrip line TL1, the high-impedance microstrip line TL1 can be in a high characteristic impedance microstrip line only by a metal line with a very thin line width, and the power attenuation of the power sampling circuit 100 can be controlled by adjusting the length of the high microstrip line. The first capacitor C1 realizes a DC blocking function, and the first capacitor C1 can be tuned to a fundamental frequency band, so that the fundamental insertion loss is reduced. The power sampling circuit 100 structure provided by the invention can realize direct power sampling detection on the same chip, thereby greatly saving the layout area. Secondly, in the invention, when the power amplifier is in an open circuit condition, the power detection circuit receives most of power, so that the detection output indication voltage exceeds a normal threshold to give an alarm, and the logic control circuit is prompted to open the circuit, thereby protecting the power amplifier.
In the present embodiment, the feeding circuit 101 includes a first diode D1, a cathode of the first diode D1 is connected to the second end of the first capacitor C1, and an anode is connected to the reference voltage source.
The feeding circuit 101 further includes a first triode Q1 and a second triode Q2, wherein a base and a collector of the first triode Q1 are connected to each other, the collector is connected to an anode of the first diode D1, a collector of the second triode Q2 is connected to an emitter of the first triode Q1 and a collector of the second triode Q2, and an emitter of the second triode Q2 is grounded.
In this embodiment, the feeding circuit 101 further includes a second resistor R2, a first end of the second resistor R2 is connected to the reference voltage source, and a second end is connected to the base and the collector of the first transistor Q1.
In a specific embodiment, the feeding circuit 101 further includes a third resistor R3, a first terminal of the third resistor R3 is connected to the reference voltage source, and a second terminal is connected to the second terminal of the first capacitor C1.
The invention provides a temperature compensation direct current power supply mode through the feed circuit 101, as shown in the structure of the feed circuit 101 in fig. 2, the power supply mode of the feed circuit 101 of the invention is different from the prior invention patent, can realize the temperature compensation of full temperature and enhance the strength of radio frequency signals and direct current isolation, is more beneficial to enabling all sampled power signals to enter a rectification circuit, and improves the conversion efficiency. The principle analysis of the feed circuit 101 with temperature compensation is as follows, in the aspect of enhancing direct current isolation, isolation of direct current radio frequency signals is achieved through a third resistor R3 and a first diode D1, power signals of a P1 node reach a P2 node after power sampling is conducted on the power signals through a power sampling circuit 100, the power signals face selection of two branches, one part of energy of the power signals enters a power rectifying circuit 102, the other part of energy enters the feed circuit 101, in order to improve the efficiency of converting the power signals into direct current voltage, most of the power signals need to enter the power rectifying circuit 102 through a P2 node, power is prevented from entering the feed circuit 101, and therefore output impedance of the feed circuit 101 needs to be improved. The cathode of the first diode D1 is connected to the node P2, which increases the output impedance of the feeding circuit 101, and further increases the output impedance through the third resistor R3, thereby preventing the power signal at the node P2 from entering the feeding circuit 101, and achieving the effect of enhancing dc and dc isolation.
The invention does not completely adopt the third resistor R3 for isolation, because a larger circuit is needed for isolation by completely adopting the third resistor R3, and the layout area consumption is increased. However, it is within the scope of the present invention to use the third resistor R3 alone or to separately provide the first diode D1 to isolate the rf and dc signals.
In the present embodiment, the power rectification circuit 102 includes a third transistor Q3, wherein a base and a collector of the third transistor Q3 are connected to each other, the base is connected to the second end of the first capacitor C1, and the emitter is connected to the input terminal of the power rectification circuit 102.
The principle of the invention in terms of temperature compensation of the feed circuit 101 is specifically analyzed as follows, the feed circuit 101 inputs a reference voltage through a Vref node connected with a reference voltage source, the voltage is loaded on the left end of a collector of a first triode Q1 and a third resistor R3 after passing through a second resistor R2, the first triode Q1 and the second triode Q2 are connected in a diode mode, a clamping voltage VQ1C is generated on the collector of a first triode Q1, the voltage drop of a first diode D1 is VD1, and the voltage drop of a third triode Q3 is VQCE 3. The triode is composed of a PN junction, the threshold opening voltage VT of the triode changes along with the temperature, the temperature rising voltage VT falls, and the temperature falling voltage VT rises. In order to keep the detection node voltage Vdet at full temperatureThe constant is maintained, so that the feeding circuit 101 needs to provide a constant bias current under the condition of the full temperature, so that the product voltage Vdet of the bias current and the fifth resistor R5 can be kept constant, and the feeding circuit 101 of the present invention has such a function. The quiescent current IQ3 of the third transistor Q3 is related to the base radio voltage Vbe3, when the temperature rises, the threshold voltage VT3 of the third transistor Q3 drops, and in order to maintain the quiescent current IQ3, the base radio voltage Vbe3 of the third transistor Q3 is inevitably required to drop to keep the current constant; when the temperature drops, the threshold voltage VT3 of the third transistor Q3 rises, and in order to maintain the static current IQ3 constant, it is necessary to raise the base voltage Vbe3 of the third transistor Q3 to keep the current constant. In the same principle, when the temperature rises, the collector of the first transistor Q1 and the clamping voltage VQ1C necessarily drop due to the drop of the threshold voltages of the first transistor Q1 and the second transistor Q2, and the voltage VD1 of the first diode D1 also becomes low, namely:
therefore, the static current IQ3 at high temperature can be kept unchanged, namely Vset is unchanged; in the same way, when the temperature drops, since the threshold voltages of the first diode D1 and the second diode D2 rise, the collector-clamp voltage VQ1C of the first diode D1 inevitably rises, and the voltage VD1 of the first diode D1 also rises, there are:
therefore, the quiescent current IQ3, i.e., the voltage Vset, can be maintained constant at low temperatures. Further analysis shows that the PN junctions have the same voltage variation Δ V with temperature under the condition of transistor area matching for the first transistor Q1, the second transistor Q2, the third transistor Q3 and the first diode D1. In order to keep the static current IQ3 unchanged, the third transistor Q3 maintains the magnitude of IQ3 corresponding to the voltage Vbe3 at normal temperature; the third triode Q3 maintains the voltage (Vbe 3-delta V) corresponding to the magnitude of IQ3 at high temperature; the third transistor Q3 maintains IQ3 at a voltage level corresponding to Vbe3+ Δ V at low temperature, and the combination of the first transistor Q1, the second transistor Q2 and the first diode D1 can provide such a compensation trend.
Due to the unidirectional conductivity of the third transistor Q3, the third transistor Q3 is conducting during the positive half of the signal period at node P2; the third triode Q3 is cut off in the negative half cycle of the signal period at the node P2, so that the direct current component, other harmonic waves and stray components can be generated at the node P3, and the rectification purpose is achieved.
In this embodiment, the detection filter circuit 103 includes a second capacitor C2 and a fifth resistor R5, a first end of the second capacitor C2 is connected to the output terminal of the power rectification circuit 102, a second end of the second capacitor C2 is connected to ground, a first end of the fifth resistor R5 is connected to the first end of the second capacitor C2 and the power detection voltage output terminal, and the second end of the fifth resistor R5 is connected to ground.
The detection filter circuit 103 further includes a second diode D2, a third diode D3, a fourth diode D4, and a fifth diode D5, wherein a cathode of the fifth diode D5 is grounded, an anode of the fifth diode D5 is connected to a cathode of the fourth diode D4, an anode of the fourth diode D4 is connected to a cathode of the third diode D3, an anode of the third diode D3 is connected to a first end of the second capacitor C2 and a cathode of the second diode D2, and an anode of the second diode D2 is grounded.
In this embodiment, the detection filter circuit 103 further includes a fourth resistor R4, a first end of the fourth resistor R4 is connected to the output end of the power rectification circuit 102, and a second end is connected to the first end of the second capacitor C2.
When the direct current output by the power rectification circuit 102 flows through the fifth resistor R5, a direct voltage is generated, and the larger the output power of the power amplifier is, the larger the generated direct voltage is, so that the output power of the power amplifier can be judged according to the voltage Vdet of the detection node, and the power detection function is realized. The second capacitor C2 serves as a filtering function, and can filter high-frequency signals such as harmonic waves, stray waves and the like output by the power rectifying circuit 102, so that the detection node voltage Vdet is relatively clean. The second diode D2, the third diode D3, the fourth diode D4 and the fifth diode D5 have ESD protection and over-detection protection functions, when the power amplifier is open, a phenomenon that a large power is input into the power detection circuit occurs, so that Vdet is increased, and in order to prevent the Vdet from being too large and exceeding a detection voltage range, the Vdet is controlled within a control voltage range by using a diode clamping principle.
The power detection circuit of the high-resistance microstrip line structure has the following advantages:
1. the power sampling circuit 100 provided by the invention realizes higher input impedance by adopting a high-resistance microstrip line TL1 structure, so that the power detection circuit and a circuit where a power amplifier is positioned are better isolated, a directional coupler structure is replaced, the chip layout area is greatly reduced, the high-efficiency power detection effect is realized, and the power detection circuit is simplified.
2. The feed circuit 101 provided by the invention can realize a good compensation effect of the power detection circuit in the whole temperature range, and provide stable bias current at high and low temperatures so that the power detected by the power detection circuit is not influenced by the temperature. And secondly, the feed circuit 101 can better isolate the radio frequency signal and the direct current signal, thereby improving the conversion efficiency of the rectifying circuit.
3. The circuit provided by the invention has a simple and compact circuit structure, only needs one-way power supply, has low power consumption and is convenient for chip integration.
Through the structure, the invention provides the power detection circuit with the high-resistance microstrip line structure, which is convenient for direct chip integration, the power detection circuit can detect power within the full temperature range of-40 ℃ to 85 ℃, and the power detection circuit has a better temperature compensation effect; the power detection circuit can directly detect the power of the output port of the power amplifier without generating a larger load effect on the power amplifier, so that the influence of the output power of the power amplifier is reduced; therefore, the power detection circuit does not need an additional secondary amplification module, thereby consuming more chip area and power consumption.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A kind of high-resistance microstrip line structure's power detection circuit, characterized by, the said high-resistance microstrip line structure's power detection circuit includes: the power sampling circuit is respectively connected with the feed circuit and the power rectifying circuit, and the detection filtering circuit is connected with the output end of the power rectifying circuit;
the power sampling circuit comprises a high-resistance microstrip line and a first capacitor, wherein the first end of the high-resistance microstrip line is connected with the radio-frequency signal output end of the power amplifier and the first end of the output matching structure, the second end of the high-resistance microstrip line is connected with the first end of the first capacitor, the second end of the high-resistance microstrip line is respectively connected with the input ends of the feed circuit and the power rectifying circuit, the power sampling circuit samples the output power of the power amplifier and transmits the sampled power signal to the feed circuit and the power rectifying circuit;
one end of the feed circuit is connected with a reference voltage source, the other end of the feed circuit is connected with the first capacitor and the input end of the power rectification circuit, and constant bias current is provided for the power rectification circuit through the feed circuit;
the power rectifying circuit rectifies the power signal to generate a direct current signal and a high-frequency alternating current signal, and transmits the signals to the detection filter circuit to detect and filter the high-frequency signals.
2. The power detection circuit of claim 1, wherein the power sampling circuit further includes a first resistor, a first end of the first resistor is connected to a second end of the high-impedance microstrip line, a second end of the first resistor is connected to a first end of the first capacitor, and a second end of the output matching structure outputs the radio frequency signal.
3. The power detection circuit of a high resistance microstrip line structure as claimed in claim 1 wherein said feed circuit comprises a first diode having a cathode connected to the second terminal of said first capacitor and an anode connected to said reference voltage source.
4. The power detection circuit of high-resistance microstrip line structure as claimed in claim 3, wherein said feeding circuit further comprises a first triode and a second triode, the base and collector of the first triode are connected with each other, and the collector is connected with the anode of the first diode, the collector of the second triode is connected with the emitter of the first triode and the collector of the second triode, and the emitter of the second triode is grounded.
5. The power detection circuit of high resistance microstrip line structure as claimed in claim 4, wherein said feeding circuit further comprises a second resistor, a first end of said second resistor is connected to said reference voltage source, and a second end is connected to a base and a collector of said first triode.
6. The power detection circuit of a high resistance microstrip line structure as claimed in claim 1 wherein said feed circuit further comprises a third resistor, a first end of said third resistor being connected to said reference voltage source and a second end being connected to a second end of said first capacitor.
7. The power detection circuit with high impedance microstrip line structure as claimed in claim 1, wherein said power rectification circuit comprises a third triode, the base and collector of said third triode are connected with each other, the base is connected with the second end of said first capacitor, and the emitter is connected with the input end of said power rectification circuit.
8. The power detection circuit of high resistance microstrip line structure as claimed in claim 1, wherein said detection filter circuit comprises a second capacitor and a fifth resistor, a first end of said second capacitor is connected to the output terminal of said power rectification circuit, a second end is grounded, a first end of said fifth resistor is connected to the first end of said second capacitor and the power detection voltage output terminal, and a second end is grounded.
9. The power detection circuit of high resistance microstrip line structure as claimed in claim 8, wherein said detection filter circuit further comprises a second diode, a third diode, a fourth diode, and a fifth diode, wherein a cathode of said fifth diode is connected to ground, an anode of said fifth diode is connected to a cathode of said fourth diode, an anode of said fourth diode is connected to a cathode of said third diode, an anode of said third diode is connected to a first terminal of a second capacitor, a cathode of said second diode, and an anode of said second diode is connected to ground.
10. The power detection circuit of high resistance microstrip line structure as claimed in claim 9, wherein said detection filter circuit further includes a fourth resistor, a first end of said fourth resistor is connected to an output end of said power rectification circuit, and a second end is connected to a first end of said second capacitor.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117452189A (en) * | 2023-12-22 | 2024-01-26 | 深圳市瀚强科技股份有限公司 | Radio frequency power detection method and related device |
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| CN117452189A (en) * | 2023-12-22 | 2024-01-26 | 深圳市瀚强科技股份有限公司 | Radio frequency power detection method and related device |
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