CN114141950B - Tin-based perovskite solar cell and preparation method thereof - Google Patents
Tin-based perovskite solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of novel thin-film solar cell preparation, and particularly discloses a tin-based perovskite solar cell and a preparation method thereof. According to the method, phenylethylamine bromide is added into a tin-based perovskite precursor solution, and a tin-based perovskite thin film is prepared by adopting one-step spin coating. The additive is helpful for improving the crystallization quality of the film, improving the appearance, reducing the internal defect state and reducing the non-radiative recombination. In addition, the carrier transport capability is enhanced by the matched energy band structure formed by the absorption layer and the charge transport layer prepared by the technology. The photoelectric conversion efficiency of the corresponding tin-based perovskite solar cell device reaches 14.65% and still keeps more than 90% of the initial value after being placed for 4800 hours. The data show that the addition of phenethylamine bromine into the precursor solution is a preparation method for effectively improving the photoelectric conversion efficiency and stability of the tin-based perovskite battery.
Description
Technical Field
The invention relates to the technical field of novel thin-film solar cell preparation, in particular to a tin-based perovskite solar cell and a preparation method thereof.
Background
At present, most of light absorbers of the high-efficiency perovskite solar cell contain heavy metal lead elements, and the development of the perovskite solar cell is limited by the toxicity and the harm to the environment of the lead. The tin-based perovskite material has higher absorption coefficient and carrier mobility, the forbidden band width of the tin-based perovskite material is more matched with the solar spectrum, and the tin-based perovskite material is an ideal substitute material for lead-based perovskite. However, the tin-based perovskite battery has far lower efficiency than the lead-based perovskite battery due to the problems of easy oxidation, multiple defects, energy level mismatching and the like of the divalent tin.
The mainstream technical means for optimizing the performance of the tin-based perovskite solar cell at present comprise light absorption body component engineering, morphology control, reducing agent addition of precursor liquid, functional layer energy band design, dimension regulation and control, cell structure improvement and the like. Particularly, ligand modification in the macrocation salt plays a key role, and the introduction of phenylethylamine iodide salt, 2-fluoro-phenylethylammonium iodide, ethylamine hydroiodide, phenylhydrazine hydrochloride and the like can play roles of slowing down the crystallization rate of the tin-based perovskite thin film, controlling the crystal growth of the perovskite thin film, reducing the density of defect states of crystal boundaries and interfaces, forming quasi-two-dimensional perovskite by reacting with three-dimensional perovskite and the like, so that the introduction of the phenylethylamine iodide salt, the 2-fluoro-phenylethylammonium iodide, the ethylamine hydroiodide, the phenylhydrazine hydrochloride and the like can improve the photoelectric conversion efficiency of the tin-based perovskite solar cell; in addition, the hydrophobicity and the oxygen hydrophobicity of the amino ligand structure can inhibit oxidation, and the stability of the battery can be improved. However, when the orientation of the perovskite crystal is perpendicular to the carrier transport direction, large cations may impede carrier transport; when the perovskite with low dimensionality is not uniformly distributed, the unfavorable quantum well effect is formed, the performance of the device is reduced, and the tin-based perovskite solar cell with high efficiency and high stability is difficult to realize.
Therefore, how to further explore the passivation technology of the additive in the tin-based perovskite is of great significance for simultaneously improving the efficiency and stability of the tin-based perovskite battery.
Disclosure of Invention
In view of the above, the invention provides a tin-based perovskite solar cell and a preparation method thereof, and the invention improves the photoelectric conversion efficiency of a tin-based perovskite solar cell device.
In order to achieve the purpose, the invention adopts the following technical scheme:
a tin-based perovskite solar cell comprises a substrate, a transparent conductive film, a hole transport layer, a tin-based perovskite film absorption layer, an electron transport layer, a hole blocking layer and a metal electrode layer which are sequentially stacked;
wherein, the tin-based perovskite film absorption layer contains phenethylamine bromide.
Preferably, the tin-based perovskite thin film absorption layer is prepared from a tin-based perovskite precursor solution and an anti-solvent;
solutes of the tin-based perovskite precursor solution comprise phenethylamine bromide, ethylenediamine iodide, stannous fluoride, germanium iodide, formamidine iodide and stannous iodide;
the solvent of the tin-based perovskite precursor solution is a mixture of N, N-dimethylformamide and dimethyl sulfoxide.
Preferably, the molar ratio of phenethylamine bromide, ethylenediamine iodide, stannous fluoride, germanium iodide, formamidine iodide and stannous iodide in the tin-based perovskite precursor solution is 0.01.
Preferably, the volume ratio of the N, N-dimethylformamide to the dimethyl sulfoxide in the tin-based perovskite precursor solution is 1.
Preferably, the molar concentration of phenethylamine bromide in the tin-based perovskite precursor solution is 1-10%.
Preferably, the anti-solvent is chlorobenzene or toluene;
wherein the volume ratio of the tin-based perovskite precursor solution to the anti-solvent is 50-600.
Another object of the present invention is to provide a method for preparing a tin-based perovskite solar cell, comprising the following steps:
1) Depositing a transparent conductive film on a substrate;
2) Coating a hole transport material on the transparent conductive film, and then carrying out annealing treatment to form a hole transport layer on the transparent conductive film;
3) Coating a tin-based perovskite precursor solution on a hole transport layer under a protective atmosphere, dropwise adding an anti-solvent into the coated 10 th to 20 th seconds, and then carrying out annealing treatment to form a tin-based perovskite thin film absorption layer on the hole transport layer;
4) Depositing an electron transport layer on the tin-based perovskite thin film absorption layer;
5) Depositing a hole blocking layer on the electron transport layer;
6) And depositing a metal film on the hole blocking layer to serve as a metal electrode layer.
Preferably, the coating in the step 2) adopts a two-step spin coating method.
Preferably, the coating in the step 3) adopts a one-step spin coating method, the spin coating speed is 3000-6000 rpm, and the spin coating time is 40-70 s; the temperature of the annealing treatment is 50-100 ℃, and the annealing time is 10-30 min.
Preferably, the thickness of the tin-based perovskite thin film absorption layer in the step 3) is 200-400 nm.
According to the technical scheme, compared with the prior art, the invention has the following beneficial effects:
1. the invention utilizes phenylethylamine bromide as an additive of a tin-based perovskite precursor solution, and organic cation Phenylethylamine (PEA) is obtained through the interaction between phenylethylamine organic macromolecular cation and halogen anion and tin-based perovskite 2+ ) The method has the advantages of playing a role of dimension cutting, forming a two-dimensional/three-dimensional mixed perovskite structure, improving the crystallinity of the film and improving the surface appearance. The surface two-dimensional structure plays a role in blocking water and oxygen, and the stability of the device is improved. The interaction of the bromide ions and the iodide ions passivates the internal defects of the film, so that the surface potential distribution of the film is more uniform. The tin-based perovskite battery interface energy band structure using the additive is improved, and the carrier transport capacity is enhanced.
2. The efficiency and stability of the tin-based perovskite prepared by the method are remarkably improved, and compared with a tin-based perovskite solar cell without an additive, the maximum conversion efficiency of the tin-based perovskite solar cell is increased from 11.98% to 14.65%, and is improved by about 21.9%. After 4800 hours of standing, the photoelectric conversion efficiency of the cell still keeps more than 90% of the initial value.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a tin-based perovskite solar cell prepared by the method of the invention; in fig. 1: 1. a glass substrate; 2. an indium tin oxide transparent conductive film; 3. a hole transport layer; 4. a tin-based perovskite thin film absorption layer; 5. an electron transport layer; 6. a hole blocking layer; 7. a metal electrode layer;
FIG. 2 is an X-ray diffraction pattern of tin-based perovskite thin films prepared in example 1 of the present invention and comparative example 1;
FIG. 3 is a graph of the fluorescence minority carrier lifetime of tin-based perovskite thin films prepared in example 1 and comparative example 1 of the present invention;
FIG. 4 is a microscope image of atomic force on the surface of tin-based perovskite thin films prepared in example 1 (b) and comparative example 1 (a);
FIG. 5 is a graph showing surface potential profiles of tin-based perovskite thin films prepared in example 1 (d) and comparative example 1 (c);
FIG. 6 is a graph showing the comparison between the surface morphology (e) and the surface potential selection area linearity (f) of the tin-based perovskite thin films prepared in example 1 and comparative example 1;
fig. 7 is a graph (a) of a current density-voltage curve and a graph (b) of a photoelectric conversion efficiency with time for tin-based perovskite solar cells prepared in example 1 and comparative example 1.
Detailed Description
The invention provides a tin-based perovskite solar cell which comprises a substrate, a transparent conductive film, a hole transport layer, a tin-based perovskite film absorption layer, an electron transport layer, a hole barrier layer and a metal electrode layer which are sequentially stacked;
wherein, the tin-based perovskite film absorption layer contains phenethylamine bromide.
In the invention, the tin-based perovskite thin film absorption layer is prepared from a tin-based perovskite precursor solution and an anti-solvent.
In the invention, the solute of the tin-based perovskite precursor solution comprises phenethylamine bromide, ethylenediamine iodine, stannous fluoride, germanium iodide, formamidine iodine and stannous iodide.
In the invention, the solvent of the tin-based perovskite precursor solution is a mixture of N, N-dimethylformamide and dimethyl sulfoxide.
In the present invention, the molar ratio of phenethylamine bromide, ethylenediamine iodide, stannous fluoride, germanium iodide, formamidine iodide and stannous iodide in the tin-based perovskite precursor solution is 0.01.
In the present invention, the volume ratio of N, N-dimethylformamide to dimethyl sulfoxide in the tin-based perovskite precursor solution is 1 to 4, preferably 2.
In the invention, the molar concentration of phenethylamine bromide in the tin-based perovskite precursor solution is 1-10%, preferably 1%.
In the invention, the anti-solvent is chlorobenzene or toluene; chlorobenzene is preferred.
Wherein the addition volume ratio of the tin-based perovskite precursor solution to the anti-solvent is 50-600; preferably 50.
The invention also provides a preparation method of the tin-based perovskite solar cell, which comprises the following steps:
1) Depositing a transparent conductive film on a substrate;
2) Coating a hole transport material on the transparent conductive film, and then carrying out annealing treatment to form a hole transport layer on the transparent conductive film;
3) Coating a tin-based perovskite precursor solution on a hole transport layer under a protective atmosphere, dropwise adding an anti-solvent in 10-20 s of spin coating, and then carrying out annealing treatment to form a tin-based perovskite thin film absorption layer on the hole transport layer;
4) Depositing an electron transport layer on the tin-based perovskite thin film absorption layer;
5) Depositing a hole blocking layer on the electron transport layer;
6) And depositing a metal film on the hole blocking layer to serve as a metal electrode layer.
In the present invention, the substrate is preferably a glass substrate.
In the invention, the coating in the step 2) adopts a two-step spin coating method; the specific process is that firstly spinning at 450-550 rpm for 9-12 s, then spinning at 4800-5200 rpm for 28-32 s, preferably spinning at 500rpm for 10s, and then spinning at 5000rpm for 30s.
In the invention, the annealing treatment temperature in the step 2) is 140-160 ℃, and preferably 150 ℃; the annealing time is 18-25 min, preferably 20min.
In the invention, the coating in the step 3) adopts a one-step spin coating method, wherein the spin coating speed is 3000-6000 rpm, the spin coating time is 40-70 s, preferably the spin coating speed is 5000rpm, and the spin coating time is 50s; the annealing temperature is 50-100 ℃, the annealing time is 10-30 min, and the annealing temperature is preferably 70 ℃, and the annealing time is preferably 20min.
In the present invention, the thickness of the tin-based perovskite thin film absorption layer in the step 3) is 200 to 400nm, preferably 260nm.
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Step 1): depositing indium tin oxide on a glass substrate to form an indium tin oxide transparent conductive film substrate, placing the indium tin oxide transparent conductive film substrate on a polytetrafluoroethylene sample rack, and sequentially adding deionized water and a glass cleaning agent (Germany)
III), deionized water, acetone and absolute ethyl alcohol for 15 minutes respectively, and then soaking the cleaned indium tin oxide transparent conductive film substrate in a beaker of the absolute ethyl alcohol, and sealing and storing the substrate by using tinfoil paper.
Step 2): phenethylamine bromide, ethylenediamine iodide, stannous fluoride, germanium iodide, formamidine iodide and stannous iodide were mixed in a molar ratio of 0.01.
Phenethylamine bromide is used as an additive (manufacturer: optimized technology, product number: 53916-94-2), and the structural formula is as follows:
step 3): and drying the indium tin oxide transparent conductive film substrate by using nitrogen, and carrying out ultraviolet ozone cleaning treatment for 15 minutes.
Step 4): and (2) taking 2 ml of a hole transport material PEDOT (PSS) by using an injector, dropwise adding 200 microliters to the indium tin oxide transparent conductive film substrate prepared in the step 3) through a filter membrane with the aperture of 0.45 micrometer, adopting a two-step spin coating method, firstly performing spin coating at 500 revolutions per minute for 10 seconds, then performing spin coating at 5000 revolutions per minute for 30 seconds, and after the spin coating is finished, placing the substrate coated with the hole transport material on a hot table for annealing treatment in an air atmosphere at the temperature of 150 ℃ for 20 minutes.
Step 5): putting the transparent conductive glass substrate with the hole transport layer in the spin coating mode in the step 4) into a nitrogen glove box, transferring 50 microliters of the perovskite precursor solution prepared in the step 2) onto the hole transport layer by using a liquid transfer gun, and preparing the perovskite thin film by using a spin coating method, wherein the spin coating speed is 5000 revolutions per minute, and the spin coating time is 50 seconds. At 12 seconds, 600 microliters of chlorobenzene was added dropwise as an anti-solvent, and after the completion of spin coating, the sample was placed on a hot stage at 70 ℃ for 20 minutes of annealing, all in a nitrogen glove box.
Step 6): and (3) respectively evaporating electron transport layer fullerene, a hole blocking layer bathocuproine and metal electrode silver with the thicknesses of 25 nanometers, 6 nanometers and 100 nanometers by adopting a vacuum evaporation method to complete the preparation of the tin-based perovskite solar cell, wherein the structural schematic diagram of the prepared tin-based perovskite solar cell is shown in figure 1.
Example 2
Step 1): depositing indium tin oxide on glass substrate to form transparent conductive indium tin oxide film substrate, placing on polytetrafluoroethylene sample rack, sequentially adding deionized water and glass cleaning agent (Germany)
III), deionized water, acetone and absolute ethyl alcohol for 15 minutes respectively, and then soaking the cleaned indium tin oxide transparent conductive film substrate in a beaker of the absolute ethyl alcohol, and sealing and storing the substrate by using tinfoil paper.
Step 2): phenethylamine bromide, ethylenediamine iodide, stannous fluoride, germanium iodide, formamidine iodide and stannous iodide were mixed in a molar ratio of 0.05.
Step 3): and drying the indium tin oxide transparent conductive film substrate by using nitrogen, and carrying out ultraviolet ozone cleaning treatment for 15 minutes.
Step 4): and (2) taking 2 ml of a hole transport material PEDOT (PSS) by using an injector, dropwise adding 200 microliters to the indium tin oxide transparent conductive film substrate prepared in the step 3) through a filter membrane with the aperture of 0.45 micrometer, adopting a two-step spin coating method, firstly spin-coating at 450 revolutions per minute for 9 seconds, then spin-coating at 5200 revolutions per minute for 28 seconds, and after the spin coating is finished, placing the substrate coated with the hole transport material on a hot table for annealing treatment in an air atmosphere at the temperature of 140 ℃ for 25 minutes.
And step 5): putting the transparent conductive glass substrate with the hole transport layer in the spin coating in the step 4) into a nitrogen glove box, transferring 60 microliters of the prepared perovskite precursor solution in the step 2) onto the hole transport layer by using a liquid transfer gun, and preparing the perovskite thin film by using a spin coating method, wherein the spin coating speed is 3000 rpm, and the spin coating time is 70 seconds. At the 10 th second, 600. Mu.l of chlorobenzene was added dropwise as an anti-solvent, and after the completion of spin coating, the sample was placed on a hot stage at 50 ℃ for 30 minutes of annealing, all in a nitrogen glove box.
Step 6): and (3) respectively evaporating electron transport layer fullerene, a hole blocking layer bathocuproine and metal electrode silver with the thicknesses of 24 nanometers, 5 nanometers and 110 nanometers by adopting a vacuum evaporation method, so as to finish the preparation of the tin-based perovskite solar cell.
Example 3
Step 1): depositing indium tin oxide on glass substrate to form transparent conductive indium tin oxide film substrate, placing on polytetrafluoroethylene sample rack, sequentially adding deionized water and glass cleaning agent (Germany)
III) deionized water, acetone and absolute ethyl alcohol for 15 minutes respectively, and then washingSoaking the clean indium tin oxide transparent conductive film substrate in a beaker of absolute ethyl alcohol, and sealing and storing the substrate by using tin foil paper.
Step 2): phenethylamine bromide, ethylenediamine iodide, stannous fluoride, germanium iodide, formamidine iodide and stannous iodide were mixed at a molar ratio of 0.10.
Step 3): and drying the indium tin oxide transparent conductive film substrate by using nitrogen, and carrying out ultraviolet ozone cleaning treatment for 15 minutes.
Step 4): and (2) taking 2 ml of a hole transport material PEDOT: PSS by using an injector, dropwise adding 200 microliters to the indium tin oxide transparent conductive film substrate prepared in the step 3) through a filter membrane with the aperture of 0.45 micrometer, adopting a two-step spin coating method, firstly spin-coating at 550rpm for 12 seconds, then spin-coating at 4800 rpm for 32 seconds, and after the spin coating is finished, placing the substrate coated with the hole transport material on a hot table to carry out air atmosphere annealing treatment at 160 ℃ for 18 minutes.
Step 5): putting the transparent conductive glass substrate with the spin-coated hole transport layer in the step 4) into a nitrogen glove box, transferring 80 microlitre of the perovskite precursor solution prepared in the step 2) onto the hole transport layer by using a liquid transfer gun, and preparing a perovskite thin film by using a spin-coating method, wherein the spin-coating speed is 6000rpm, and the spin-coating time is 40 seconds. At the 20 th second, 600. Mu.l of chlorobenzene was added dropwise as an anti-solvent, and after the completion of spin coating, the sample was placed on a hot stage at 100 ℃ for 10 minutes of annealing, which was completed in a nitrogen glove box.
Step 6): and respectively evaporating electron transport layer fullerene, hole blocking layer bathocuproine and metal electrode silver with the thicknesses of 26 nanometers, 6 nanometers and 100 nanometers by adopting a vacuum evaporation method to finish the preparation of the tin-based perovskite solar cell.
Comparative example 1
In this comparative example, phenethylamine bromide was not added, and the amounts of the other raw materials and the specific operation were the same as in example 1.
Forward scans of-0.04 to 1.00V and reverse scans of 1.00 to-0.04V were performed for example 1 and comparative example 1, respectively, and parameters such as open circuit voltage, short circuit current density, fill factor, and conversion efficiency were measured, and the results are shown in table 1.
Table 1 example 1 and comparative example 1 preparation of tin-based perovskite solar performance parameters
As can be seen from table 1, the open-circuit voltage of the tin-based perovskite solar cell prepared by doping phenylethylamine bromide is high, the short-circuit current density and the filling factor are greatly improved, and the highest high conversion efficiency of the device is increased from 11.98% to 14.65%.
X-ray diffraction was performed on the tin-based perovskite thin film absorption layers prepared in inventive example 1 and comparative example 1, and the diffraction results were shown in fig. 2. From fig. 2, it can be seen that the tin-based perovskite thin film (100) containing phenethylamine bromine additive has obviously enhanced directional characteristic diffraction peak intensity and improved crystallinity.
The fluorescence minority carrier lifetime of the tin-based perovskite thin film absorption layers prepared in the example 1 and the comparative example 1 of the invention is detected, and the result is shown in fig. 3. From fig. 3, it can be seen that the carrier lifetime of the absorbing layer of the tin-based perovskite thin film prepared in example 1 is increased from 9.67 ns to 20.1 ns, indicating that the defect state density in the thin film is reduced.
The atomic force micrographs of the surfaces of the tin-based perovskite thin films prepared in example 1 and comparative example 1 of the present invention were examined, and the results are shown in fig. 4. The surface potential distribution diagrams of the tin-based perovskite thin films prepared in example 1 and comparative example 1 of the present invention were examined, and the results are shown in fig. 5. The results of the linear graphs of the surface topography and surface potential corresponding to the cross-sectional lines of fig. 4 and 5 are shown in fig. 6. From fig. 4 and fig. 6 (e), it can be seen that tin-based perovskite thin film containing PEABr additive has enlarged crystal grains, and the surface root mean square roughness is reduced from 21 nm to 15 nm; it can be seen from fig. 5 and 6 (f) that the potential difference between the crystal grains and the grain boundaries of the tin-based perovskite thin film containing the PEABr additive is reduced from +/-20 mv to +/-10 mv, the surface potential difference between the crystal grains and the grain boundaries is reduced, and the grain boundary defects are passivated.
The performance of the tin-based perovskite solar cell prepared in example 1 and comparative example 1 of the present invention was tested, and the test results are shown in fig. 7, where fig. 7 reflects that the open circuit voltage and conversion efficiency of the tin-based perovskite solar cell containing the PEABr additive are greatly improved, and the improvement of the crystallinity of the thin film and the reduction of the defect state density are benefited. After the additive is added, a low-dimensional perovskite layer is formed to play a role of a protective layer, and the stability of the device is greatly improved. .
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A tin-based perovskite solar cell is characterized by comprising a substrate, a transparent conductive film, a hole transport layer, a tin-based perovskite film absorption layer, an electron transport layer, a hole blocking layer and a metal electrode layer which are sequentially stacked;
wherein, the tin-based perovskite thin film absorption layer contains phenethylamine bromide;
the tin-based perovskite thin film absorption layer is prepared from a tin-based perovskite precursor solution and an anti-solvent;
solutes of the tin-based perovskite precursor solution comprise phenethylamine bromide, ethylenediamine iodide, stannous fluoride, germanium iodide, formamidine iodide and stannous iodide;
the solvent of the tin-based perovskite precursor solution is a mixture of N, N-dimethylformamide and dimethyl sulfoxide;
the molar ratio of phenethylamine bromide, ethylenediamine iodine, stannous fluoride, germanium iodide, formamidine iodine and stannous iodide in the tin-based perovskite precursor solution is 0.01-0.10.
2. The tin-based perovskite solar cell according to claim 1, wherein the volume ratio of N, N-dimethylformamide to dimethyl sulfoxide in the tin-based perovskite precursor solution is 1.
3. The tin-based perovskite solar cell according to claim 2, wherein the molar concentration of phenethylamine bromide in the tin-based perovskite precursor solution is 1-10%.
4. A tin-based perovskite solar cell according to claim 1 or 3, wherein the anti-solvent is chlorobenzene or toluene;
wherein the volume ratio of the tin-based perovskite precursor solution to the anti-solvent is 50-600.
5. A method of manufacturing a tin-based perovskite solar cell as claimed in any one of claims 1 to 4, comprising the steps of:
1) Depositing a transparent conductive film on a substrate;
2) Coating a hole transport material on the transparent conductive film, and then carrying out annealing treatment to form a hole transport layer on the transparent conductive film;
3) Coating a tin-based perovskite precursor solution on a hole transport layer under a protective atmosphere, dropwise adding an anti-solvent into the coated 10 th to 20 th seconds, and then carrying out annealing treatment to form a tin-based perovskite thin film absorption layer on the hole transport layer;
4) Depositing an electron transport layer on the tin-based perovskite thin film absorption layer;
5) Depositing a hole blocking layer on the electron transport layer;
6) And depositing a metal film on the hole blocking layer to serve as a metal electrode layer.
6. The method for preparing the tin-based perovskite solar cell as claimed in claim 5, wherein the coating in the step 2) is a two-step spin coating method.
7. The method for preparing a tin-based perovskite solar cell according to claim 6, wherein the step 3) is a one-step spin coating method, the spin coating speed is 3000-6000 rpm, and the spin coating time is 40-70 s; the annealing temperature is 50-100 ℃, and the annealing time is 10-30 min.
8. The method for preparing the tin-based perovskite solar cell according to claim 7, wherein the thickness of the tin-based perovskite thin film absorption layer in the step 3) is 200-400 nm.
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| CN111180579A (en) * | 2020-01-16 | 2020-05-19 | 苏州大学 | Method for preparing pure-phase high-index vertically-oriented tin-based perovskite film based on phenethyl ammonium chloride |
| CN113410400A (en) * | 2021-06-15 | 2021-09-17 | 南京邮电大学 | Tin-based perovskite thin film, quality improvement method thereof and tin-based perovskite solar cell |
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