CN114136821A - Bimodal sensor and data processing method thereof - Google Patents
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- 229910052714 tellurium Inorganic materials 0.000 claims description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 5
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Abstract
The present disclosure provides a bimodal sensor and a data processing method thereof, the bimodal sensor includes: an active layer disposed on the flexible substrate; a first sensing element and a second sensing element disposed on the active layer; the second sensing elements are symmetrically arranged at two sides of the first sensing element; the first sensing element and the second sensing element are configured to share a working electrode; and a filling layer disposed on the first sensing element, wherein a height of the filling layer is configured to be a height difference between the first sensing element and the second sensing element.
Description
Technical Field
The disclosure relates to the field of flexible devices, in particular to a bimodal sensor and a data processing method thereof.
Background
The touch sense is always an important channel for acquiring external information by human beings or bionic machinery. The touch sensor gives the bionic machinery the ability of acquiring the material information of the contact object and assists the bionic machinery to complete the functions of grabbing, identifying and the like. In order to acquire more accurate information, the touch sensor is gradually developed from the initial single sensing to the multi-dimensional sensing so as to acquire more abundant information and assist the bionic machinery to acquire more accurate information.
In the related art, a dual-mode or even multi-mode sensor is mostly implemented by piecing and integrating a plurality of sensors, or implemented by a plurality of signal channels of one device. On one hand, the processing is not realized by a single sensing unit to realize multi-mode detection, and on the other hand, the mechanism of the acquisition operational amplifier circuit of two signals of voltage and current is different, so that the number of the repeated modules of the back-end circuit is increased. In addition, with the development of flexible electronic technology, the possibility of using artificial electronic skin to give tactile sensation to skin-injured patients has also increased significantly. At present, a sensor for sensing the deformation of a contact object needs to rely on precise mechanical control, and the relative displacement of a device in a macroscopic space needs to be known. Mechanical control and self-awareness on the millimeter scale is extremely difficult to achieve for humans or for certain machines.
At present, the requirement on mechanical control is higher when the flexible sensing device detects hardness, and the limitation that the flexible sensing device is not suitable for electronic skin exists, so that a multi-mode touch sensor which is not high in dependence on spatial position, can realize simultaneous detection of two signals by a single element and is used for material identification is urgently needed.
Disclosure of Invention
Technical problem to be solved
In view of the above, a primary object of the present disclosure is to provide a dual-mode sensor and a data processing method thereof, which are intended to at least partially solve at least one of the above-mentioned technical problems.
(II) technical scheme
In view of the above, the present disclosure provides a bimodal sensor and a data processing method of the bimodal sensor.
According to a first aspect of the present disclosure, there is provided a dual-modality sensor, comprising: an active layer disposed on the flexible substrate; a first sensor element and a second sensor element provided on the active layer; the second sensing elements are symmetrically arranged at two sides of the first sensing element; the first sensing element and the second sensing element are configured to share a working electrode; and a filling layer provided on the first sensor element, wherein a height of the filling layer is arranged to be a height difference between the first sensor element and the second sensor element.
According to an embodiment of the present disclosure, the dual-modality sensor described above, wherein: the first sensor element includes: a first pair of electrodes disposed on the active layer along a first axis; the first counter electrode and the working electrode are electrically connected through the active layer; the second sensor element includes: the second pair of electrodes are arranged on the active layer along a first axis and are symmetrically arranged on two sides of the first pair of electrodes; the second pair of electrodes is electrically connected with the working electrode through the active layer; the working electrode is disposed on the active layer along a second axis, and the first axis and the second axis are parallel to each other.
According to an embodiment of the present disclosure, the dual-modality sensor described above, wherein: the distance between the adjacent first pair of electrodes and the second pair of electrodes is larger than the distance between the first pair of electrodes or the second pair of electrodes and the working electrode; or the distance between the adjacent second pair of electrodes is larger than the distance between the first pair of electrodes or the second pair of electrodes and the working electrode.
According to an embodiment of the present disclosure, the dual-modality sensor described above, wherein: the first pair of electrodes and the second pair of electrodes have the same size.
According to an embodiment of the present disclosure, the dual-modality sensor described above, wherein: the distance between the adjacent first pair of electrodes and the second pair of electrodes is equal; alternatively, the distances between the adjacent second pairs of electrodes are equal.
According to an embodiment of the present disclosure, the dual-modality sensor described above, wherein: the number of the first sensor elements is one, and the number of the second sensor elements is two.
According to an embodiment of the present disclosure, the dual-modality sensor described above, wherein: the flexible substrate is made of polyimide; the active layer is made of tellurium nanowire film.
According to a second aspect of the present disclosure, there is provided a data processing method of a dual-modality sensor, including: acting a first voltage on a first sensing element, and acquiring a first current at a first time point; acting a second voltage on the first sensing element, and acquiring a second current at a second time point; wherein the first voltage is greater than the second voltage; when the switching time interval between the first voltage and the second voltage is smaller than the response time of the dual-mode sensor, the open-circuit voltage value and the internal resistance value of the device corresponding to the first time point and the second time point are constant, and the following is obtained according to the first voltage, the first current, the second voltage and the second current:
wherein: r is the internal resistance value of the device; vthermIs a thermoelectric potential; vHIs a first voltage; vLA second voltage; i isHIs a first current; i isLIs the second current.
According to an embodiment of the present disclosure, in the data processing method,: and when the signal acquisition time interval at the first time point and the second time point is smaller than the response time of the dual-mode sensor, the open-circuit voltage value and the internal resistance value of the device corresponding to the two adjacent sampling time points are constant.
According to an embodiment of the present disclosure, in the data processing method,: further comprising: when the dual-mode sensor is used for touching a contact object, the output current of the first sensing element is I under the first voltage state1The output current of the second sensing element is I1’、I2’…In', obtain reference data:
wherein: the reference data is configured as hardness information of the contact object.
(III) advantageous effects
Based on the technical scheme, compared with the prior art, the method has at least one or one part of the following beneficial effects:
(1) in the present disclosure, a filling layer is added on the first sensing element to form a height difference between the first sensing element and the second sensing element. When the familiar force is used to touch an object, a data set with a difference is obtained.
(2) The purpose of judging the hardness of an object can be achieved by collecting current signals under the high-voltage state, the method does not relate to space position information, reduces the requirement on the space information, and is more suitable for electronic skins.
(3) By collecting the current signal, the simultaneous output of both the thermoelectric potential and the piezoresistive signal by the single first sensing element is realized.
(4) The signal output used in the method is a current signal and can be completed by adopting the same operational amplifier circuit, thereby simplifying the mechanism of the acquisition operational amplifier circuit which needs to process the voltage signal and the current signal respectively.
(5) This is disclosed through structural design, designs the second counter electrode symmetry and sets up in first counter electrode both sides for the external pressure mean value that the second sensing element receives is approximately equal to the pressure that the symmetry center receives, and the error that sensor small-angle slope arouses when eliminating touching object has realized setting up the precision improvement of counter electrode for asymmetric unilateral.
Drawings
FIG. 1 is a right side view of a dual-modality tactile sensor in an embodiment of the present disclosure;
FIG. 2 is a top view of a dual-modality tactile sensor in an embodiment of the present disclosure;
FIG. 3A is a top view of a bimodal tactile sensor with one first pair of electrodes and N second pair of electrodes in an embodiment of the disclosure;
FIG. 3B is a top view of a first M electrodes, 2M electrodes in a dual-mode tactile sensor according to an embodiment of the disclosure;
FIG. 3C is a top view of a dual-modality tactile sensor with Q electrodes and Q +1 electrodes in a first pair in accordance with an embodiment of the present disclosure;
FIG. 4A is an IV curve of the temperature differential response of a first sensing element in an embodiment of the disclosure;
FIG. 4B is an IV curve of the piezoresistive response of the first sense element in an embodiment of the present disclosure;
FIG. 5 is an IV response curve of a first sensing element at adjacent high and low voltages in a data acquisition design according to an embodiment of the disclosure.
FIG. 6 is a graph showing output current versus compressive displacement for a first sensing element and a second sensing element of a dual-mode sensor provided by an embodiment of the disclosure when contacting objects of different hardness.
[ description of reference ]
100: flexible substrate 60Q: a first pair of electrodes
200: active layer 701: a second pair of electrodes
301: first sensing element 702: a second pair of electrodes
401: second sensing element 703: a second pair of electrodes
402: second sensing element 704: a second pair of electrodes
501: filling layer 70N-1: a second pair of electrodes
502: filling layer 70N: a second pair of electrodes
50M: filling layer 702M: a second pair of electrodes
50Q: filling layer 70Q + 1: a second pair of electrodes
601: first pair of electrodes 800: working electrode
602: first pair of electrodes 9: first axis position
60M: first pair of electrodes 10: position of two axes
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
Certain embodiments of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the disclosure are shown. Indeed, various embodiments of the disclosure may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements.
As an aspect of the present disclosure, a dual-modality sensor is provided, wherein the dual-modality sensor includes an active layer, a flexible substrate, a fill-layer, a first sensing element, and a second sensing element.
An active layer disposed on the flexible substrate;
a first sensing element and a second sensing element disposed on the active layer; the second sensing elements are symmetrically arranged at two sides of the first sensing element; the first sensing element and the second sensing element are configured to share a working electrode;
and a filling layer disposed on the first sensing element, wherein a height of the filling layer is configured to be a height difference between the first sensing element and the second sensing element.
The dual-modality sensing apparatus components and structures of embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
In the following description, specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure can be implemented in various other ways than those described herein, and similar generalizations can be made by those skilled in the art without departing from the spirit of the present disclosure. The present disclosure is therefore not limited by the specific implementations disclosed below.
FIG. 1 is a right side view of a dual-modality sensor provided by an embodiment of the present disclosure.
Referring to fig. 1, the present disclosure provides a dual-modality sensor that includes a flexible substrate 100, an active layer 200, a first sensing element 301, a second sensing element 401, a second sensing element 402, and a fill-layer 501.
The active layer 200 is disposed on the flexible substrate 100, the first sensing element 301, the second sensing element 401, and the second sensing element 402 are disposed on the active layer 200, the second sensing element 401 and the second sensing element 402 are symmetrically disposed on two sides of the first sensing element 301, and the filling layer 501 is disposed on the first sensing element 301.
According to an embodiment of the present disclosure, the first sensing element 301, the second sensing element 401, and the second sensing element 402 are configured to share one working electrode (not shown, described below).
According to the embodiment of the present disclosure, the active layer 200 adopts an active layer having thermoelectric properties and piezoresistive properties, and the material of the active layer 200 has better uniformity so as to achieve approximately the same response effect of the sensing element, and the material of the active layer 200 can be selected from, but not limited to, a tellurium nanowire array thin film.
According to an embodiment of the present disclosure, the flexible substrate 100 may be a flexible substrate suitable for circuit processing and material growth, which may be selected from, but not limited to, Polyimide (PI).
According to an embodiment of the present disclosure, the filling layer 501 may be a material having a thickness similar to that of the component, a hundred-micron level, and relatively good thermal conductivity. Such as but not limited to, polyacetimide.
According to the embodiment of the present disclosure, the filling layer 501 is disposed on the first sensing element 301 to form a height difference with the second sensing element 401 and the second sensing element 402, that is, a fixed displacement difference between the first sensing element 301 and the second sensing element 401 and the second sensing element 402 is introduced, so that when an object is touched by an inertial force, three sets of output currents having a difference can be obtained.
According to an embodiment of the present disclosure, the first sensing element comprises: a first pair of electrodes disposed on the active layer along a first axis; the first pair of electrodes is electrically connected with the working electrode through the active layer; the second sensing element includes: the two second counter electrodes are arranged on the active layer along the first axis and are symmetrically arranged on two sides of the first counter electrode; the second pair of electrodes is electrically connected with the working electrode through the active layer; the working electrode is arranged on the active layer along a second axis, and the first axis and the second axis are parallel to each other.
FIG. 2 is a top view of a dual-modality sensor provided by an embodiment of the invention.
Referring to fig. 2, the first sensing element 301 includes a first pair of electrodes 601 and a working electrode 800 electrically connected to the first pair of electrodes 601 through the active layer 200; the second sensing element 401 includes a second pair of electrodes 701 and a working electrode 800 electrically connected to the second pair of electrodes 701 through the active layer 200; the second sensing element 402 includes a second pair of electrodes 702 and a working electrode 800 electrically connected to the second pair of electrodes 702 through the active layer 200.
The first pair of electrodes 601, the second pair of electrodes 701 and the second pair of electrodes 702 are all arranged on the active layer 200 along the first axial position 9, and the second pair of electrodes 701 and the second pair of electrodes 702 are symmetrically arranged on two sides of the first pair of electrodes 601, so that errors caused by small-angle inclination of the device are eliminated; the working electrode 800 is disposed on the active layer 200 along a second axis position 10, and the first axis position 9 and the second axis position 10 are parallel to each other.
According to an embodiment of the present disclosure, the distance between adjacent first and second pairs of electrodes 601, 701, 702 is greater than the distance between the first or second pair of electrodes 601, 701, 702 and the working electrode 800.
According to an embodiment of the present disclosure, the first pair of electrodes 601 and the second pair of electrodes 701, 702 are the same size.
According to the embodiment of the disclosure, the length of the first pair of electrodes 601 is the same as the length of the second pair of electrodes 701 and 702, the width of the first pair of electrodes 601 is the same as the width of the second pair of electrodes 701 and 702, and the thickness of the first pair of electrodes 601 is the same as the thickness of the second pair of electrodes 701 and 702, so as to ensure that the performance of the sensing element is similar, and the specific size data is not specifically limited in the disclosure.
According to the embodiment of the present disclosure, the first counter electrode 601, the second counter electrode 701, 702 and the common working electrode 800 may be made of a solid conductive material with uniform thickness, such as copper tape, and the specific electrode material is not specifically limited by the present disclosure, but the electrode is prepared directly on the active layer by evaporation or the like should be avoided.
According to an embodiment of the present disclosure, the number of the first sensing elements may be one, and the number of the second sensing elements may be two.
According to an embodiment of the present disclosure, referring to fig. 3A, the number of the first pair of electrodes 601 may be one, the corresponding filling layer 501 is one, and the number of the corresponding second pair of electrodes 701, the. The first pair of electrodes 601 and the second pair of electrodes 701, 70N-1, 70N are disposed along the first axial position 9, and the second pair of electrodes 701, 70N-1, 70N are disposed symmetrically on both sides of the first pair of electrodes 601. The first pair of electrodes 601 is arranged at a distance d from two adjacent second pairs of electrodes 701, 70N-1, 70N, the two adjacent second pairs of electrodes 701, 70N-1, 70N are arranged at a distance d, the distance between the first pair of electrodes 601 and the working electrode 800 is c, the distance between the second pair of electrodes 701, 70N-1, 70N and the working electrode 800 is c, and d is larger than c.
For the purpose of brevity, any technical features that may be equally applied to the embodiment shown in FIG. 2 are described herein, and the same description need not be repeated.
According to an embodiment of the present disclosure, referring to fig. 3B, the number of the first pair of electrodes 601, the. Wherein the first pair of electrodes 601, 701 is placed along the first axis position 9, and the second pair of electrodes 701, 702M is placed on both sides of the first pair of electrodes 601, 60. The first pair of electrodes 601, 701, 702M is arranged to be at a distance d from the two adjacent second pairs of electrodes 701, 702M, the two adjacent second pairs of electrodes 701, 702M are at a distance d, the distance between the first pair of electrodes 601, 60M and the working electrode 800 is c, and the distance between the second pair of electrodes 701, 702M and the working electrode 800 is c, and d is larger than c.
For the purpose of brevity, any technical features that may be equally applied to the embodiment shown in FIG. 2 are described herein, and the same description need not be repeated.
In a dual-mode sensor provided in an embodiment of the present disclosure, referring to fig. 3C, the number of the first pair of electrodes 601, the. Wherein the first pair of electrodes 601, 60Q and the second pair of electrodes 701, 70Q +1 are all placed along the first axial position 9, and the second pair of electrodes 701, 70Q +1 are placed on two sides of the first pair of electrodes 601, 60Q. The first pair of electrodes 601, 60Q is arranged at a distance d from two adjacent second pairs of electrodes 701, 70Q +1, the first pair of electrodes 601, 60Q is arranged at a distance c from the working electrode 800, the second pair of electrodes 701, 70Q +1 is arranged at a distance c from the working electrode 008, and d is larger than c, so that small currents caused by different thermoelectric potentials between the first pair of electrodes 601, 60Q and the second pair of electrodes 701, 70Q +1 can be reduced, and errors in hardness measurement can be further reduced.
For the purpose of brevity, any technical features that may be equally applied to the embodiment shown in FIG. 2 are described herein, and the same description need not be repeated.
As another aspect of the present disclosure, a method of making a bimodal sensor is also provided.
In the following description, where the number of the first sensing elements is one and the number of the second sensing elements is two, for example, specific details are set forth in the following description in order to provide a thorough understanding of the present disclosure, but the present disclosure can be implemented in a variety of ways other than those described herein, and can be similarly generalized by those skilled in the art without departing from the spirit of the present disclosure. The present disclosure is therefore not limited by the specific implementations disclosed below.
The present disclosure provides a method for manufacturing a bimodal sensor, comprising:
growing a uniform active layer on a flexible substrate;
leading out a working electrode on one side of the active layer, and leading out a first pair of electrodes and a second pair of electrodes on the other side;
and adding an upper filling layer on the first pair of electrodes and the electrical connection part of the first pair of electrodes and the working electrode.
There is provided in accordance with an alternative embodiment of the present disclosure a method of making a dual-modality sensor, including:
preparing a chromium metal layer and a gold metal layer on one side of a flexible substrate in sequence;
growing a uniform active layer on the gold metal layer and the flexible substrate;
a layer of SU8 is spin-coated on the grown active layer to play a role in supporting and insulating;
leading out a working electrode at one side with a gold metal layer at the bottom, leading out a first counter electrode and a second counter electrode at the other side, and placing the first counter electrode and the second counter electrode on an active layer;
and adding an upper filling layer on the first pair of electrodes and the electrical connection part of the first pair of electrodes and the working electrode.
According to an embodiment of the present disclosure, the flexible substrate is a flexible substrate suitable for circuit processing and material growth, and may be selected from, but not limited to, Polyimide (PI).
According to an embodiment of the present disclosure, the lengths of the chromium metal layer and the gold metal layer are the same as the length of the working electrode, and the widths of the chromium metal layer and the gold metal layer are the same as the width of the working electrode.
According to the embodiment of the disclosure, the active layer has thermoelectric properties and piezoresistive properties, and the material of the active layer can be selected from, but not limited to, a tellurium nanowire array thin film.
According to the embodiment of the present disclosure, the second pair of electrodes are placed on both sides of the first pair of electrodes in a symmetrical manner, wherein the distance between the first pair of electrodes and the adjacent second pair of electrodes is larger than the distance between the first pair of electrodes and the working electrode; the distance between the first pair of electrodes and the working electrode is the same as the distance between the second pair of electrodes and the working electrode.
According to the embodiment of the present disclosure, the first pair of electrodes and the second pair of electrodes have the same length, width and height.
According to the embodiment of the disclosure, the filling layer is made of a material which is similar to the thickness of the element, is in the hundred-micron level and has relatively good heat conduction. Such as but not limited to, polyacetimide.
As another aspect of the present disclosure, there is also provided a data processing method of dual-modality sensor element signal acquisition, including:
acting a first voltage on a first sensing element, and acquiring a first current at a first time point;
acting a second voltage on the first sensing element, and acquiring a second current at a second time point; wherein, the first voltage > the second voltage;
when the switching speed between the first voltage and the second voltage is greater than the response speed of the dual-mode sensor, the open-circuit voltage value and the internal resistance value of the device corresponding to the first time point and the second time point are constant, and the following results are obtained according to the first voltage, the first current, the second voltage and the second current:
wherein R is the internal resistance value of the device; vthermIs a thermoelectric potential; vHIs a first voltage; vLA second voltage; i isHIs a first current; i isLIs the second current.
The dual-mode sensor structure of the embodiments of the present disclosure is described in detail below with reference to the accompanying drawings.
In the following description, specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure can be implemented in various other ways than those described herein, and similar generalizations can be made by those skilled in the art without departing from the spirit of the present disclosure. The present disclosure is therefore not limited by the specific implementations disclosed below.
FIG. 4A is an IV curve of the temperature differential response of a first sensing element in an embodiment of the disclosure;
FIG. 4B is an IV curve of the piezoresistive response of the first sensing element in an embodiment of the present disclosure;
FIG. 5 is an IV response curve of a first sensing element at adjacent high and low voltages in a data acquisition design according to an embodiment of the disclosure.
According to the embodiment of the present disclosure, tellurium nanowire thin film materials with thermoelectric and piezoelectric properties are adopted as the active layers to represent the potential output of the sensing element to different temperature differences and the resistance output under different pressures, as shown in fig. 4A and 4B.
According to embodiments of the present disclosure, the transition time interval between the high voltage and the low voltage is much smaller than the response time of the device to temperature, for example, but not limited to, the transition time interval between the high voltage and the low voltage is 20ms, and the response time of the device to temperature is 2 s.
According to embodiments of the present disclosure, the collection time interval of the data points is much smaller than the response time of the device to temperature, such as, but not limited to, 20ms for the collection time interval of the data points and 2s for the response time of the device to temperature. Assuming that the open-circuit voltage and the internal resistance of the device corresponding to two adjacent high and low sampling time points are constant, and the first voltage V is adoptedHActing on the first sensing element to obtain a first current I at a first time pointHAt a second voltage VLActing on the first sensing element to obtain a second current I at a second time pointLAn IV curve of the device over time can be obtained, see fig. 5.
According to an embodiment of the present disclosure, a difference between the first voltage and the second voltage is taken as a first difference; the difference value between the first current signal and the second current signal is used as a second difference value; the product of the first voltage and the first current signal is a first product, and the product of the second voltage and the second current signal is a second product; the difference between the first product and the second product is a third difference; the difference between the second current signal and the first current signal is a fourth difference. The ratio of the first difference value to the second difference value is a piezoresistive signal output by the element, namely a resistance value R; the ratio of the third difference to the fourth difference is the intensity of the electric field inside the first sensing element output by the element, i.e. the thermoelectric potential Vtherm.
Referring to fig. 5, the inverse slope of the curve is
Namely the resistance value R; intercept of the curve being
I.e. the thermoelectric potential Vtherm.
According to an embodiment of the present disclosure, the first voltage is a high voltage and the second voltage is a low voltage, wherein the high voltage > desired thermoelectric potential > low voltage, high voltage VHAt least an order of magnitude higher than the maximum expected thermoelectric potential; low voltage VLBut not limited to 0V, and the maximum value can be the same magnitude as the expected thermoelectric potential.
As still another aspect of the present disclosure, there is also provided a data processing method for signal acquisition of a dual-modality sensor integrated device, including:
touching a touching object with a dual-mode sensor, the output current of the first sensing element being I in a first voltage state1The output current of the second sensing element is I1’、I2’...In', obtain reference data:
wherein the reference data is configured to contact stiffness information of the object.
The data processing method of the dual-mode sensor according to the embodiments of the present disclosure is described in detail below with reference to the accompanying drawings.
In the following description, specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure can be implemented in various other ways than those described herein, and similar generalizations can be made by those skilled in the art without departing from the spirit of the present disclosure. The present disclosure is therefore not limited by the specific implementations disclosed below.
FIG. 6 is a graph showing output current versus compressive displacement for a first sensing element and a second sensing element of a dual-mode sensor provided by an embodiment of the disclosure when contacting objects of different hardness.
According to the embodiment of the present disclosure, materials with different hardness have different stress-strain curves, and different current and compression displacement curves can be obtained through the measurement of the present disclosure, and refer to fig. 6.
According to an embodiment of the present disclosure, a filling layer is added on the first sensing element, forming a height difference between the first sensing element and the second sensing element. When the object is touched with the inertial force, a data set with differences is obtained.
In the following description, where the number of the first sensing elements is one and the number of the second sensing elements is two, for example, specific details are set forth in the following description in order to provide a thorough understanding of the present disclosure, but the present disclosure can be implemented in a variety of ways other than those described herein, and can be similarly generalized by those skilled in the art without departing from the spirit of the present disclosure. The present disclosure is therefore not limited by the specific implementations disclosed below.
In the first voltage state, when a touch object is touched by using the present disclosure, a height difference between the first sensing element and the second sensing element is formed due to the addition of the filling layer on the first sensing element, and three sets of data sets having a difference are obtained. The output current of the first sensing element is I2The output current of the second sensing element is I1、I3Definition of
S is a parameter reflecting the hardness information of the contact at this time.
In the following description, where the number of the first sensing elements is one and the number of the second sensing elements is N, for example, specific details are set forth in the following description in order to provide a thorough understanding of the present disclosure, but the present disclosure can be implemented in a variety of ways other than those described herein, and can be similarly generalized by those skilled in the art without departing from the spirit of the present disclosure. The present disclosure is therefore not limited by the specific implementations disclosed below.
In the first voltage state, when the contact object is touched by using the inertial force, a height difference between the first sensing element and the second sensing element is formed due to the filling layer added on the first sensing element, and a data set with a difference is obtained. The output current of the first sensing element is I1The output current of the second sensing element is I1’、I2’...In', definition
S is a parameter reflecting the hardness information of the contact at this time.
According to the embodiment of the disclosure, the parameter S reflecting the contact hardness information is associated with the output current of the first sensing element, the output current of the first sensing element is the current generated under the conventional force, and the machine iterative learning is used for obtaining more accurate judgment.
According to embodiments of the present disclosure, combine I2The hardness information of the contact object of the reaction sensor does not relate to the space position information.
According to the embodiment of the disclosure, the signals needing to be collected, operated and amplified are all current values, can be realized through a single amplifying circuit, and detection of voltage signals is not needed, so that the effects of avoiding circuit conflict and mutual interference are achieved when the voltage and current signals are detected.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail.
In conclusion, the method can be used for surfaces without accurate mechanics, so that the temperature and pressure information of the contact object can be acquired, the object can be distinguished, and the external information can be acquired.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above embodiments are provided to further explain the purpose, technical solutions and advantages of the present disclosure in detail, and it should be understood that the above embodiments are merely exemplary of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A dual-modality sensor, comprising:
an active layer disposed on the flexible substrate;
a first sensing element and a second sensing element disposed on the active layer; the second sensing elements are symmetrically arranged on two sides of the first sensing element; the first sensing element and the second sensing element are configured to share a working electrode;
a fill-in layer disposed on the first sensing element, a height of the fill-in layer configured as a height difference between the first sensing element and the second sensing element.
2. The dual-modality sensor of claim 1,
the first sensing element includes: a first pair of electrodes disposed on the active layer along a first axis; the first counter electrode is electrically connected with the working electrode through the active layer;
the second sensing element includes: the second pair of electrodes are arranged on the active layer along a first axis and symmetrically arranged on two sides of the first pair of electrodes; the second counter electrode is electrically connected with the working electrode through the active layer;
the working electrode is arranged on the active layer along a second axis, and the first axis and the second axis are parallel to each other.
3. The dual-modality sensor of claim 2, wherein a distance between adjacent first and second pairs of electrodes is greater than a distance between the first or second pair of electrodes and the working electrode; or the distance between the adjacent second pair of electrodes is larger than the distance between the first pair of electrodes or the second pair of electrodes and the working electrode.
4. The dual-modality sensor of claim 2, wherein the first pair of electrodes and the second pair of electrodes are the same size.
5. The dual-modality sensor of claim 2, wherein the spacing between adjacent first and second pairs of electrodes is equal; alternatively, the distances between the adjacent second pairs of electrodes are equal.
6. The dual-modality sensor of any of claims 1 to 5, wherein the number of the first sensing elements is one and the number of the second sensing elements is two.
7. The dual-modality sensor of any of claims 1 to 5, wherein the material of the flexible substrate is a polyimide; the active layer is made of a tellurium nanowire film.
8. A method of data processing of the dual-modality sensor of any one of claims 1 to 7, comprising:
acting a first voltage on a first sensing element, and acquiring a first current at a first time point;
acting a second voltage on the first sensing element, and acquiring a second current at a second time point; wherein the first voltage is greater than the second voltage;
when the conversion time interval between the first voltage and the second voltage is far smaller than the response time of the dual-mode sensor, the device open-circuit voltage value and the device internal resistance value corresponding to the first time point and the second time point are constant, and according to the first voltage, the first current, the second voltage and the second current, the following results are obtained:
wherein R is the internal resistance value of the device; vthermIs a thermoelectric potential; vHIs a first voltage; vLA second voltage; i isHIs a first current; i isLIs the second current.
9. The data processing method of claim 8, wherein when the signal acquisition time interval at the first and second time points is much smaller than the response time of the dual-modality sensor, the device open-circuit voltage value and the device internal resistance value corresponding to two adjacent sampling time points are constant.
10. The data processing method of claim 8, further comprising:
touching a touching object with the dual-mode sensor, the output current of the first sensing element is I under the first voltage state1The output current of the second sensing element is I1’、I2’…In', obtain reference data:
wherein the reference data is configured as hardness information of the contact object.
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