CN114134457B - Preparation method of grating-like structure composite NTC thermosensitive film - Google Patents
Preparation method of grating-like structure composite NTC thermosensitive film Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000000137 annealing Methods 0.000 claims description 50
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 24
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- -1 polytetrafluoroethylene Polymers 0.000 claims description 12
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 12
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 12
- 238000007796 conventional method Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000013461 design Methods 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
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- 238000000034 method Methods 0.000 abstract description 19
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- 238000009529 body temperature measurement Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
The invention provides a preparation method of a grating-like structure composite NTC thermosensitive film. According to the method, two or more NTC heat-sensitive films are grown on a substrate, different films are grown in a stripe form to form a grating-like structure, and the aim of regulating and controlling the electrical properties of the NTC films is fulfilled by adjusting the types and the stripe widths of the films. On the one hand, the preparation method can avoid the problem of poor film consistency caused by uneven source material or target material phase distribution in the process of preparing the multiphase composite source material or target material and then taking the multiphase composite source material or target material as the basic material to prepare the composite film; on the other hand, the problem of interface defect generated by lattice mismatch or mismatch of thermal expansion coefficients in the heterogeneous growth process of the composite film, thereby causing the degradation of the film quality can be avoided. The method has the advantages of simple preparation process, low cost and controllable performance, and can be popularized to the fields of semiconductors, sensors and the like.
Description
Technical Field
The invention relates to the field of preparation of two-dimensional materials and temperature sensing, in particular to a preparation method of a grating-like structure composite NTC thermosensitive film.
Background
The temperature sensor is used as a temperature real-time measuring device, is one of electronic five sense organs in the modern information society, and plays a very important role in the production and life of people. With the gradual popularization of the Internet of things and the development of a digital society in China, research work of constructing an integrated and intelligent temperature sensor by taking a thermosensitive film as a core material is also becoming a hot spot gradually. The thermosensitive film of a single material system has a plurality of limitations in performance, such as high temperature measurement sensitivity but narrow temperature range. The composite material can combine various different substances in different modes, so that the advantages of various materials can be exerted, the defect of a single material is overcome, and the application range of the material is enlarged. There are two common ways to obtain composite ceramic films, but there are disadvantages. The first scheme is to prepare multiphase composite source material or target material and prepare composite film with the multiphase composite source material or target material as basic material. However, the physical grinding method is often used in the process of compounding the target material, which generally causes uneven distribution of source materials or target materials, and further causes the problem of poor film consistency. The second scheme is to achieve the purpose of compounding by using different targets to perform multilayer film growth on the substrate. However, interface defects are generated due to lattice mismatch or mismatch of thermal expansion coefficients in the heterogeneous growth process of the composite film, so that the quality of the film is reduced.
In order to solve the problems, the invention provides a preparation method of the composite NTC thermosensitive film with the similar grating structure based on the original thought of laminating the composite film. According to the method, two or more phase materials are subjected to composite overlapping growth in a stripe phase-to-phase mode by utilizing a cross stripe design mode, so that the problem of interface heterogeneous mismatch in the growth process of different phase films is avoided, and the final performance of the composite film can be changed by controlling the size, the number and the film types of the stripes.
Disclosure of Invention
The invention aims to provide a preparation method of a grating-like structure composite NTC thermosensitive film, which comprises the steps of growing two or more NTC thermosensitive films on a substrate, growing different films in a stripe form to form a grating-like structure, and adjusting the types and stripe widths of the films to realize the aim of regulating and controlling the electrical properties of the NTC film. On one hand, the method avoids the problems of poor consistency and large difference of thermal expansion coefficients caused by preparing the composite target material in advance and lattice mismatch in the growth of the multilayer thin film; on the other hand, the composite film is grown by adopting the mask plate with the similar grating structure, so that the phase composite step is simplified, the fusion of different elements can be realized through simple target material replacement, the experimental time is greatly saved, and the experimental precision is enhanced. Has the advantages of simple preparation process, low cost and controllable performance, and can be popularized to the fields of semiconductors, films and the like.
The preparation method of the grating-like structure composite NTC thermosensitive film comprises the following steps:
a. and (3) cleaning a substrate: sequentially and respectively carrying out ultrasonic cleaning on the substrate (1) by adopting acetone, absolute ethyl alcohol, deionized water and absolute ethyl alcohol, wherein each cleaning time is respectively 10-30min, and after cleaning, carrying out blow-drying treatment on the surface of the substrate (1) by using high-purity dry nitrogen, wherein the substrate is silicon oxide, quartz glass, fluorophlogopite or zirconia, and the fluorophlogopite substrate (1) is soaked by adopting acetone and absolute ethyl alcohol for 60 min;
b. NTC thermal film growth: preparing a mask plate (2) according to the design parameters of a similar grating structure, wherein the width between gratings is 100nm-10mm, the height of gratings is 3mm-25mm, preparing a first-stage substrate (1) covered on the bottom of the mask plate (2) in a substrate tray of a magnetron sputtering device, and growing a first NTC thermosensitive film (3) by adopting direct-current magnetron sputtering with the growth power of 10-50W and the growth air pressure of 10 -1 -5Pa, the growth temperature of the substrate (1) is 50-500 ℃, the growth time is 10-60min, the NTC thermosensitive film is annealed in a tube furnace after growth, the annealing temperature is 500-900 ℃, the annealing time is 30-60min, the temperature rise and fall is 3-10 ℃/min, the annealing atmosphere is air or oxygen, and the mask plate is stainless steel or polytetrafluoroethylene; the NTC thermosensitive film is MnCoNiO system, laMnO system or LaZrO system;
c. covering the surface of the film in the step b with a second-level mask plate (4), placing the film in a substrate tray of a magnetron sputtering device again, and adopting direct-current magnetron sputtering to grow a second NTC thermosensitive film (5) with growth power10-50W, growth air pressure 10 -1 5Pa, the growth temperature of the substrate (1) is 50-500 ℃, the growth time is 10-60min, the NTC thermosensitive film is annealed in a tube furnace after growth, the annealing temperature is 500-900 ℃, the annealing time is 30-60min, the temperature rise and fall is 3-10 ℃/min, the annealing atmosphere is air or oxygen, and the composite NTC thermosensitive film is obtained, wherein the mask plate is stainless steel or polytetrafluoroethylene; the NTC thermosensitive film is MnCoNiO system, laMnO system or LaZrO system;
d. electrode preparation: c, covering an electrode mask on the surface of the composite NTC heat-sensitive film obtained in the step c, putting the electrode mask in a tray of a direct current sputtering device again, preparing Cr/Au or Ni/Au electrodes according to a conventional method, after the growth is finished, putting the NTC heat-sensitive film in an oven for annealing at 125-250 ℃ for 2-4 hours, and obtaining the composite NTC heat-sensitive film with a grating-like structure after the annealing is finished.
The invention relates to a preparation method of a grating-like structure composite NTC thermosensitive film, which is characterized in that compared with a common composite NTC thermosensitive film, the preparation method comprises the following steps:
the invention uses the stripe structure of the similar grating to compound the film, avoids the problems of different thermal expansion coefficients, lattice mismatch and the like between the conventional films, and has excellent lattice matching degree and uniformity.
The composite NTC thermosensitive film with the similar grating structure obtained by the method can change the electrical property of the composite film by controlling the width of the stripes and the types of the targets; compared with the traditional phase composition method, the method is simpler and more convenient, and facilitates more collocation attempts among different elements.
The preparation method of the grating-like structure composite NTC thermosensitive film is separated from the traditional phase composite method in principle. The influence of phase uniformity change, different thermal expansion coefficients and lattice mismatch on the overall performance is removed, the combination mode is simplified, and the sensitivity is more excellent.
Drawings
FIG. 1 is a schematic diagram of a blank substrate according to the present invention;
FIG. 2 is a schematic diagram of a first level reticle of the present invention, wherein the right diagonal line area represents the reticle;
FIG. 3 is a schematic view of a single phase film of the present invention; wherein the right-hand diagonal area represents a single-phase film that has grown, and the blank area represents the reticle footprint of an un-grown film;
FIG. 4 is a schematic diagram of a two-level reticle of the present invention, wherein the left diagonal line area represents the reticle;
FIG. 5 is a schematic diagram of a composite NTC heat-sensitive film according to the present invention, wherein the right diagonal line represents the film grown for the first time and the left diagonal line represents the film grown for the second time;
fig. 6 shows the variation of the resistance of the composite NTC thermosensitive film with a grating-like structure according to the present invention with temperature.
Detailed Description
The present invention and its effective technical effects are described in further detail below with reference to examples and drawings, but the embodiments of the invention are not limited thereto, and modifications and equivalents of the technical solutions of the present invention should be included in the protection scope of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Example 1
a. And (3) cleaning a substrate: sequentially and respectively carrying out ultrasonic cleaning on the silicon oxide substrate 1 by adopting acetone, absolute ethyl alcohol, deionized water and absolute ethyl alcohol, wherein during cleaning, the acetone, the absolute ethyl alcohol, the deionized water and the absolute ethyl alcohol are respectively 15 minutes, and after cleaning, the surface of the silicon oxide substrate 1 is dried by adopting high-purity dry nitrogen;
b. NTC thermal film growth: according to the design parameters of the similar grating structure, the width between gratings is 1mm, the height of the gratings is 10mm, a stainless steel mask plate 2 is prepared according to a conventional method, the bottom of the stainless steel mask plate 2 is covered with a primary silicon oxide substrate 1, the stainless steel mask plate is placed in a substrate tray of a magnetron sputtering device, the growth of a first NTC thermosensitive LaMnO film 3 is carried out by adopting direct current magnetron sputtering, the growth power is 40W, and the growth air pressure is 10 -1 Pa, the growth temperature of the silicon oxide substrate 1 is 200 ℃, the growth time is 20min, the NTC thermosensitive LaMnO series film 3 is annealed in a tube furnace after growth, the annealing temperature is 800 ℃, the annealing time is 30min, the temperature rise and fall is 5 ℃/min, and the annealing atmosphere is air;
c. covering the film surface in step bThe second-level stainless steel mask 4 is placed in a substrate tray of a magnetron sputtering device again, and the second NTC thermosensitive MnCoNi film 5 is grown by adopting direct-current magnetron sputtering, wherein the growth power is 40W, and the growth air pressure is 10 -1 Pa, the growth temperature of the silicon oxide substrate 1 is 200 ℃, the growth time is 20min, the NTC thermosensitive MnCoNi series film 5 is annealed in a tube furnace after growth, the annealing temperature is 750 ℃, the annealing time is 30min, the temperature rise and fall is 5 ℃/min, and the annealing atmosphere is air, so as to obtain the composite NTC thermosensitive film;
d. electrode preparation: c, covering an electrode mask on the surface of the composite NTC heat-sensitive film obtained in the step c, placing the electrode mask in a tray of a direct current sputtering device again, preparing a Cr/Au electrode according to a conventional method, wherein the process parameters are that the power is 40W, the growth time of a Cr target is 3min, the growth time of an Au target is 10min, the growth air pressure is 1Pa, the silicon oxide substrate 1 is not heated, the gas environment is a pure argon environment, placing the film in an oven for annealing after the growth is finished, the temperature is 200 ℃, the time is 2h, and obtaining the composite NTC heat-sensitive film with a grating-like structure after the annealing is finished.
Example 2
a. And (3) cleaning a substrate: the zirconia substrate 1 is sequentially and respectively subjected to ultrasonic cleaning by adopting acetone, absolute ethyl alcohol, deionized water and absolute ethyl alcohol, during cleaning, the acetone, the absolute ethyl alcohol, the deionized water and the absolute ethyl alcohol are respectively subjected to 10 minutes, and after cleaning, the surface of the zirconia substrate 1 is subjected to blow-drying treatment by using high-purity dry nitrogen.
b. NTC thermal film growth: according to the design parameters of the similar grating structure, the width between gratings is 100nm, the height of the gratings is 3mm, a polytetrafluoroethylene mask 2 is prepared according to a conventional method, a first-stage zirconia substrate 1 covered at the bottom of the polytetrafluoroethylene mask 2 is placed in a substrate tray of a magnetron sputtering device, the growth of a first NTC heat-sensitive MnCoNi film 3 is carried out by adopting direct-current magnetron sputtering, the growth power is 10W, the growth air pressure is 3Pa, the growth temperature of the zirconia substrate 1 is 50 ℃, the growth time is 60min, the NTC heat-sensitive MnCoNi film 3 is annealed in a tubular furnace after growth, the annealing temperature is 500 ℃, the annealing time is 45min, the temperature rise and fall is 3 ℃/min, and the annealing atmosphere is oxygen;
c. covering the surface of the film in the step b with a secondary photoetching mask 4, placing the film in a substrate tray of magnetron sputtering equipment again, adopting direct-current magnetron sputtering to grow a second NTC heat-sensitive LaMnO film 5, wherein the growth power is 10W, the growth air pressure is 3Pa, the growth temperature of the zirconia substrate 1 is 50 ℃, the growth time is 60min, annealing the NTC heat-sensitive LaMnO film 5 in a tubular furnace after the growth, the annealing temperature is 500 ℃, the annealing time is 45min, the temperature rise and fall is 3 ℃/min, and the annealing atmosphere is oxygen, thus obtaining the composite NTC heat-sensitive film;
d. electrode preparation: c, covering an electrode mask on the surface of the composite NTC heat-sensitive film obtained in the step c, and then placing the film in a tray of direct current sputtering equipment to prepare a Ni/Au electrode according to a conventional method, wherein the process parameters are that the power is 40W, the growth time of a Ni target is 5min, the growth time of a Au target is 12min, the growth air pressure is 1Pa, the zirconia substrate 1 is not heated, the gas environment is a pure argon environment, after the growth is finished, placing the film in an oven for annealing at the temperature of 125 ℃ for 4h, and obtaining the composite NTC heat-sensitive film element with a grating-like structure after the annealing is finished.
Example 3
a. And (3) cleaning a substrate: sequentially soaking the fluorophlogopite substrate 1 by adopting acetone and absolute ethyl alcohol respectively, wherein the acetone and the absolute ethyl alcohol are respectively used for 60 minutes during soaking, and the surface of the fluorophlogopite substrate 1 is dried by using high-purity dry nitrogen after soaking;
b. NTC thermal film growth: according to the design parameters of the similar grating structure, the width between gratings is 10mm, the height of the gratings is 25mm, a polytetrafluoroethylene mask 2 is prepared according to a conventional method, a first-stage fluorophlogopite substrate 1 covered at the bottom of the polytetrafluoroethylene mask 2 is placed in a substrate tray of a magnetron sputtering device, the growth of a first NTC thermal-sensitive LaZrO film 3 is carried out by adopting direct-current magnetron sputtering, the growth power is 50W, the growth air pressure is 5Pa, the growth temperature of the fluorophlogopite substrate 1 is 500 ℃, the growth time is 30min, the NTC thermal-sensitive LaZrO film 3 is annealed in a tube furnace after growth, the annealing temperature is 900 ℃, the annealing time is 60min, the temperature rise and fall is 10 ℃/min, and the annealing atmosphere is air;
c. covering the surface of the film in the step b with a second-stage polytetrafluoroethylene mask 4, placing the film in a substrate tray of a magnetron sputtering device again, adopting direct-current magnetron sputtering to grow a second NTC thermal MnCoNi series sensitive film 5, wherein the growth power is 50W, the growth air pressure is 5Pa, the growth temperature of the fluorophlogopite substrate 1 is 500 ℃, the growth time is 30min, and annealing the NTC thermal MnCoNi series film 5 in a tubular furnace at the annealing temperature of 900 ℃ for 60min, the temperature is increased and decreased to 10 ℃/min, and the annealing atmosphere is air to obtain the composite NTC thermal film;
d. electrode preparation: c, covering an electrode mask on the surface of the composite NTC heat-sensitive film obtained in the step c, and then, placing the composite NTC heat-sensitive film in a tray of direct current sputtering equipment again to prepare Cr/Au according to a conventional method, wherein the technological parameters are that the power is 40W, the growth time of a Cr target is 3min, the growth time of an Au target is 12min, the growth air pressure is 1Pa, the fluorophlogopite substrate 1 is not heated, the gas environment is a pure argon environment, after the growth is finished, placing the film in an oven for annealing, the temperature is 200 ℃, the time is 2.5h, and after the annealing is finished, the composite NTC heat-sensitive film with a grating-like structure is obtained.
Example 4
a. And (3) cleaning a substrate: sequentially and respectively carrying out ultrasonic cleaning on the quartz glass substrate 1 by adopting acetone, absolute ethyl alcohol, deionized water and absolute ethyl alcohol, wherein during cleaning, the acetone, the absolute ethyl alcohol, the deionized water and the absolute ethyl alcohol are respectively carried out for 30min, and after cleaning, the surface of the quartz glass substrate 1 is dried by adopting high-purity dry nitrogen;
b. NTC thermal film growth: according to the design parameters of the similar grating structure, the width between gratings is 5mm, the height of the gratings is 15mm, a polytetrafluoroethylene mask 2 is prepared according to a conventional method, a first-stage quartz glass substrate 1 covered at the bottom of the polytetrafluoroethylene mask 2 is placed in a substrate tray of a magnetron sputtering device, the growth of a first NTC thermosensitive LaZrO film 3 is carried out by adopting direct-current magnetron sputtering, the growth power is 30W, the growth air pressure is 2Pa, the growth temperature of the quartz glass substrate 1 is 100 ℃, the growth time is 45min, the NTC thermosensitive LaZrO film 3 is annealed in a tube furnace after growth, the annealing temperature is 700 ℃, the annealing time is 50min, the temperature rise and fall is 6 ℃/min, and the annealing atmosphere is oxygen;
c. covering the surface of the film in the step b with a second-stage polytetrafluoroethylene mask 4, placing the film in a substrate tray of a magnetron sputtering device again, performing growth of a second NTC heat-sensitive LaMnO film 5 by adopting direct-current magnetron sputtering, wherein the growth power is 30W, the growth air pressure is 2Pa, the growth temperature of a quartz glass substrate 1 is 100 ℃, the growth time is 45min, and performing annealing treatment on the NTC heat-sensitive LaMnO film 5 in a tube furnace after the growth, wherein the annealing temperature is 700 ℃, the annealing time is 50min, the temperature rise and fall is 6 ℃/min, and the annealing atmosphere is oxygen, so as to obtain the composite NTC heat-sensitive film;
d. electrode preparation: c, covering an electrode mask on the surface of the composite NTC heat-sensitive film obtained in the step c, and then placing the film in a tray of direct current sputtering equipment to prepare a Ni/Au electrode according to a conventional method, wherein the process parameters are that the power is 40W, the growth time of a Cr target is 3min, the growth time of an Au target is 10min, the growth air pressure is 1Pa, the quartz glass substrate 1 is not heated, the gas environment is a pure argon environment, after the growth is finished, placing the film in an oven for annealing at the temperature of 250 ℃ for 2h, and after the annealing is finished, obtaining the composite NTC heat-sensitive film with a grating-like structure.
Example 5
Test and application of the composite NTC thermosensitive film with the grating-like structure prepared in example 1:
the oil groove is used as constant temperature equipment, a computer is used for controlling the temperature of the thermometer to be measured, the temperature control interval is 273.15-348.15K, the temperature increment is 5K each time, the constant temperature time is 45min each time 5K, and the obtained resistance-temperature relation test data are shown in Table 1:
TABLE 1
| temperature/K | resistor/KΩ | temperature/K | resistor/KΩ |
| 273.15 | 74.217251 | 313.15 | 28.1002639 |
| 278.15 | 65.0828339 | 318.15 | 25.1721769 |
| 283.15 | 57.2426711 | 323.15 | 22.6066263 |
| 288.15 | 50.5406816 | 328.15 | 20.4562311 |
| 293.15 | 44.7598654 | 333.15 | 18.4534764 |
| 298.15 | 39.6854266 | 338.15 | 16.6742992 |
| 303.15 | 35.2901254 | 343.15 | 15.1079639 |
| 308.15 | 31.4571812 | 348.15 | 13.7120488 |
The temperature resistance relationship obtained in Table 1 and FIG. 6 show that, as shown in Table 1 and FIG. 6: the prepared composite NTC thermosensitive film with a similar grating structure has a temperature resistance relation curve which is in a descending trend along with the temperature rise and accords with the negative temperature coefficient relation.
The composite NTC thermosensitive film with the grating-like structure realizes the growth of various NTC thermosensitive films on a substrate, and the method utilizes a cross stripe design mode to perform composite overlapping growth on two or more phase materials in a stripe phase-to-phase mode, so that the problem of interface heterogeneous mismatch in the growth process of different phase films is avoided, and the final performance of the composite film can be changed by controlling the size, the number and the film types of stripes.
Claims (1)
1. The preparation method of the grating-like structure composite negative temperature coefficient thermosensitive film is characterized by comprising the following steps of:
a. and (3) cleaning a substrate: sequentially carrying out ultrasonic cleaning on the substrate (1) by adopting acetone, absolute ethyl alcohol, deionized water and absolute ethyl alcohol, wherein the cleaning time is respectively 10-30min each time, and drying the surface of the substrate (1) by using high-purity dry nitrogen after cleaning, wherein the substrate is silicon oxide, quartz glass, fluorophlogopite or zirconia;
b. negative temperature coefficient thermosensitive film growth: according to the design of a similar grating structure, the width between gratings is 100nm-10mm, the height of the gratings is 3mm-25mm, a mask plate (2) is prepared according to a conventional method, a primary substrate (1) covered at the bottom of the mask plate (2) is placed in a substrate tray of a magnetron sputtering device, the growth of a first negative temperature coefficient thermosensitive film (3) is carried out by adopting direct current magnetron sputtering, the growth power is 10-50W, and the growth air pressure is 10 -1 -5Pa, the growth temperature of the substrate (1) is 50-500 ℃, the growth time is 10-60min, the negative temperature coefficient thermosensitive film is annealed in a tube furnace after growth, the annealing temperature is 500-900 ℃, the annealing time is 30-60min, the temperature rise and fall are 3-10 ℃/min, the annealing atmosphere is air or oxygen, and the mask plate is stainless steel or polytetrafluoroethylene; the negative temperature coefficient thermosensitive film is MnCoNiO system, laMnO system or LaZrO system;
c. covering the surface of the film in the step b with a second-level mask plate (4), placing the film in a substrate tray of a magnetron sputtering device again, and adopting direct-current magnetron sputtering to grow a second negative temperature coefficient thermosensitive film (5) with the growth power of 10-50W and the growth air pressure of 10 -1 -5Pa, the growth temperature of the substrate (1) is 50-500 ℃, the growth time is 10-60min, the negative temperature coefficient heat-sensitive film is annealed in a tube furnace after growth, the annealing temperature is 500-900 ℃, the annealing time is 30-60min, the temperature rise and fall is 3-10 ℃/min, the annealing atmosphere is air or oxygen, and the composite negative temperature coefficient heat-sensitive film is obtained, wherein the mask plate is stainless steel or polytetrafluoroethylene; the negative temperature coefficient thermosensitive film is MnCoNiO system, laMnO system or LaZrO system;
d. electrode preparation: c, covering an electrode mask on the surface of the composite negative temperature coefficient thermosensitive film obtained in the step c, putting the electrode mask in a tray of a direct current sputtering device again, preparing Cr/Au or Ni/Au electrodes according to a conventional method, after the growth is finished, putting the negative temperature coefficient thermosensitive film in an oven for annealing at 125-250 ℃ for 2-4h, and obtaining the composite negative temperature coefficient thermosensitive film with a grating-like structure after the annealing is finished;
wherein, the negative temperature coefficient thermosensitive film systems MnCoNiO system, laMnO system or LaZrO system adopted in the step b and the step c are different systems.
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