CN114134434B - Iron-based amorphous alloy, hall strip micro device thereof and preparation method thereof - Google Patents
Iron-based amorphous alloy, hall strip micro device thereof and preparation method thereof Download PDFInfo
- Publication number
- CN114134434B CN114134434B CN202111484363.3A CN202111484363A CN114134434B CN 114134434 B CN114134434 B CN 114134434B CN 202111484363 A CN202111484363 A CN 202111484363A CN 114134434 B CN114134434 B CN 114134434B
- Authority
- CN
- China
- Prior art keywords
- hall
- iron
- micro
- strip
- magnetic structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 title claims abstract description 193
- 229910052742 iron Inorganic materials 0.000 title claims abstract description 69
- 229910000808 amorphous metal alloy Inorganic materials 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title abstract description 17
- 230000005291 magnetic effect Effects 0.000 claims abstract description 103
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 31
- 239000000956 alloy Substances 0.000 claims abstract description 31
- 238000012545 processing Methods 0.000 claims abstract description 25
- 230000005355 Hall effect Effects 0.000 claims abstract description 24
- 238000001659 ion-beam spectroscopy Methods 0.000 claims abstract description 10
- 238000005477 sputtering target Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 38
- 238000004519 manufacturing process Methods 0.000 claims description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 238000002074 melt spinning Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 9
- 238000010891 electric arc Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000003723 Smelting Methods 0.000 claims description 7
- 238000013461 design Methods 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- -1 polyethylene Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000005294 ferromagnetic effect Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002772 conduction electron Substances 0.000 description 4
- 238000004627 transmission electron microscopy Methods 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 241000519995 Stachys sylvatica Species 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000005316 antiferromagnetic exchange Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000021028 berry Nutrition 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005293 ferrimagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005418 spin wave Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C45/00—Amorphous alloys
- C22C45/02—Amorphous alloys with iron as the major constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/06—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars
- B22D11/0611—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars formed by a single casting wheel, e.g. for casting amorphous metal strips or wires
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
The invention provides an iron-based amorphous alloy, a Hall bar micro device thereof and a preparation method of the Hall bar micro device. The iron-based amorphous alloy has a stable non-collinear magnetic structure at a temperature of more than or equal to 0 ℃; the Hall strip micro device has a stable non-collinear magnetic structure at a temperature of more than or equal to 0 ℃ and a topological Hall effect; the Hall strip micro-device has two forms, one is cut from an iron-based amorphous alloy strip according to a Feng-shaped drawing by utilizing a laser processing technology. The other is a film form with the thickness of about 50nm obtained by using a master alloy ingot of iron-based amorphous alloy as a sputtering target and a Feng-shaped mask plate and performing ion beam sputtering coating. In addition, a stable vortex magnetic structure at room temperature was also observed using a lorentz transmission electron microscope. The Hall strip micro device prepared by the invention has a vortex magnetic structure with stable room temperature and a large topological Hall effect, namely an extra Hall signal generated by the topological magnetic structure can be used as a reading signal of a next-generation nonvolatile magnetic memory device, and has a great application prospect.
Description
Technical Field
The invention belongs to the field of magnetic amorphous alloy, and particularly relates to an iron-based amorphous alloy, a Hall bar micro device and a preparation method thereof.
Background
Non-collinear magnetic structures are distinguished from collinear magnetic structures in that the magnetic moment arrangements are not parallel ferromagnetic, anti-parallel antiferromagnetic or ferrimagnetic, but rather are tilted. The origin can be divided into the following categories: one is geometric frustration, i.e., a particular geometry results in magnetic moments that can only co-exist in non-collinear states, thereby reducing the energy of the overall configuration. The other is the competition of two magnetic exchanges, namely the competition of ferromagnetic and antiferromagnetic exchanges resulting in non-collinear alignment of the magnetic moments. In addition, DMI effects resulting from a lack of symmetry in the spatial inversion also cause the magnetic moments to align non-collinearly.
Topological magnetic structures such as vortices, skynergons, etc. are a typical representative of a class of non-collinear magnetic structures. When considering the strong coupling between the conduction electron and the local topological magnetic structure, the spin wave function of the conduction electron will accumulate an effective magnetic flux named as the Berry phase when passing through the topological magnetic structure and will experience the resulting effective magnetic field named Bei Li curvature. This effective magnetic field deflects the electrons creating an additional hall effect. Unlike the ordinary hall effect caused by an external magnetic field and the abnormal hall effect caused by spontaneous magnetization of a material, the hall effect caused by a topological magnetic structure is called a topological hall effect.
The topological hall effect arises from the interaction of conduction electrons and local non-collinear magnetic structures under low field, specifically, the non-collinear magnetic structures include local chiral spin states, i.e., non-collinear local triple spins, and complete magnetic vortex-like structures. When considering the ferromagnetic coupling between the conduction electrons and the magnetic structure, these electrons accumulate an additional geometric phase through such a magnetic structure, which serves to deflect the electrons as a magnetic field in real space, and thus an additional hall effect occurs. The topological Hall effect is derived from a topological magnetic structure, and can be naturally used as a reading signal of a storage device based on the topological magnetic structure, thereby attracting great attention.
The topological magnetic structure has the characteristics of small volume, high stability and small driving current density, and the related topological Hall effect can be used as a stable output signal. Therefore, the next-generation nonvolatile magnetic random access memory device is expected to be prepared by combining the characteristics of the two. However, most of the topological magnetic structures in the existing materials exist stably at low temperature, and the related topological Hall effect is small, so that the practical application is not facilitated. Therefore, the invention of a new material with a stable topological magnetic structure at room temperature and above and a larger topological Hall effect is urgently needed.
Disclosure of Invention
Therefore, the invention aims to overcome the defects in the prior art and provide an iron-based amorphous alloy, a Hall strip micro device thereof and a preparation method thereof. The ferromagnetic amorphous alloy has higher Curie temperature and has a non-collinear magnetic structure due to competitive magnetic interaction, so that the ferromagnetic amorphous alloy is very suitable for obtaining a stable topological magnetic structure above room temperature and a topological Hall effect.
In order to achieve the above object, a first aspect of the present invention provides an iron-based amorphous alloy having a stable non-collinear magnetic structure at a temperature of 0 ℃ or higher;
preferably, the non-collinear magnetic structure is selected from one or more of: a vortex magnetic structure, a Merlot magnetic structure, a Sgeminm magnetic structure and a Hopflug magnetic structure, and the most preferable is a vortex magnetic structure;
preferably, the iron-based amorphous alloy further comprises one or more elements selected from the following elements in addition to iron elements: y, tb, zr, B, si, co, ni, preferably: y, zr, B, si, co, ni, more preferably: zr, B, si, co, ni, more preferably: zr, B, si, ni.
The iron-based amorphous alloy according to the first aspect of the invention is selected from one or more of the following: fe 3 Y，Fe 2 Y，Fe 2 Tb，Fe 95 Zr 5 ，Fe 90 Zr 10 ，Fe 75 Zr 25 ，Fe 86 B 14 ，Fe 83 B 17 ，Fe 80 B 20 ，Fe 78 B 12 Si 10 ，Fe 78 (SiB) 22 ，Fe 78 B 13 Si 9 ，Fe 76 B 12 Si 12 ，Fe 75 B 15 Si 10 ，Fe 73 B 15 Si 10 ，Fe 67 Co 8 B 14 Si 11 ，(Fe 0.75 Ni 0.25 ) 78 B 12 Si 10 ，(Fe 0.5 Ni 0.5 ) 78 B 12 Si 10 ，(Fe 0.25 Ni 0.75 ) 78 B 12 Si 10 ，(Fe 0.125 Ni 0.875 ) 78 B 12 Si 10 ，Fe 5 Co 75 B 15 Si 5 ，Fe 40 Ni 40 B 20 (ii) a And/or
The temperature of 0 ℃ or higher is 0-400 ℃, preferably 0-300 ℃, more preferably 0-200 ℃, and most preferably 77 ℃.
The second aspect of the invention provides a Hall bar micro-device, and raw materials for preparing the Hall bar micro-device comprise the iron-based amorphous alloy in the first aspect;
preferably, the Hall strip micro-device has a stable non-collinear magnetic structure at a temperature of more than or equal to 0 ℃ and a topological Hall effect;
preferably, the non-collinear magnetic structure is selected from one or more of: a vortex magnetic structure, a Merla magnetic structure, a Sgermine magnetic structure and a Hopflug magnetic structure, and the most preferable vortex magnetic structure is adopted; and/or
Preferably, the temperature of 0 ℃ or higher is 0-400 ℃, preferably 0-300 ℃, more preferably 0-200 ℃, and most preferably 77 ℃.
According to the second aspect of the invention, the hall bar micro-device is in a shape of a Chinese character feng.
A third aspect of the present invention provides a method for manufacturing a hall bar micro device according to the second aspect, the method comprising the steps of:
(1) Preparing materials, smelting and cooling to obtain an iron-based master alloy ingot;
(2) The iron-based master alloy ingot prepared in the step (1) is subjected to strip throwing to obtain an iron-based amorphous alloy strip;
(3) Preparing a Hall bar micro device for measurement through processing;
preferably, the step (2) further comprises the following steps: carrying out induction melting on the iron-based master alloy ingot prepared in the step (1), and spraying the iron-based master alloy ingot onto a water-cooled copper roller to obtain an iron-based amorphous alloy strip;
preferably, the melt-spinning method is a single-roller melt-spinning method; and/or
Preferably, the injected shielding gas is argon.
The production method according to the third aspect of the present invention, wherein the step (3) further includes the steps of: cutting the iron-based amorphous alloy strip prepared in the step (2) into the Hall strip micro device for measurement by processing according to a Hall strip design drawing;
preferably, the method of processing is selected from one or more of the following: laser processing, linear cutting processing and manual scissors processing, and the most preferable mode is laser processing; and/or
Preferably, the Hall bar design drawing is shaped like a Chinese character feng;
preferably, 1-4 Hui-shaped Hall strip micro devices can be prepared through the laser processing, and more preferably 1-3 Hui-shaped Hall strip micro devices are prepared; more preferably 1-2 Hall strip micro devices in the shape of Chinese character feng are prepared.
A fourth aspect of the present invention provides a method for manufacturing a hall bar micro device according to the second aspect, the method comprising the steps of:
(1) Preparing materials, smelting and cooling to obtain an iron-based master alloy ingot;
(2) The iron-based master alloy ingot prepared in the step (1) is subjected to strip throwing to obtain an iron-based amorphous alloy strip;
(3) Taking the iron-based master alloy ingot prepared in the step (1) or the iron-based amorphous alloy strip prepared in the step (2) as a target material to prepare a Hall strip micro device for measurement, wherein the step (2) preferably comprises the following steps: taking the iron-based master alloy ingot prepared in the step (1) or the iron-based amorphous alloy strip prepared in the step (2) as a sputtering target material, covering a mask on a substrate, and sputtering and depositing an amorphous alloy film to obtain the Hall strip micro device for measurement;
preferably, the method of sputter deposition is selected from one or more of the following: ion beam sputtering deposition, magnetron sputtering, laser evaporation deposition, most preferably ion beam sputtering deposition;
preferably, the mask is in a shape like a Chinese character feng; and/or
Preferably, the material of the substrate is selected from one or more of the following: monocrystalline silicon wafers, polycrystalline silicon wafers, amorphous silicon wafers, silicon nitride wafers, silicon dioxide glass wafers and polyethylene plastic sheets, and most preferably monocrystalline silicon wafers.
According to the preparation method of the fourth aspect of the invention, each mask comprises 1-4 words, preferably 1-3 words, and most preferably 2 words; and/or
The Hall strip micro device is in a thin film form;
preferably, the thickness of the Hall strip micro device is 30-70 nm, preferably 40-60 nm, more preferably 45-55 nm, and most preferably 50nm.
The production method according to the third aspect or the fourth aspect of the invention, wherein in the step (1): the smelting is completed in an electric arc furnace;
preferably, the electric arc furnace is attracted by a titanium ingot; and/or
Preferably, the protective gas of the electric arc furnace is argon.
A fifth aspect of the present invention provides a nonvolatile magnetic memory device whose read signal is generated by the hall-bar micro-device according to the second aspect or the manufacturing method according to the third aspect or the hall-bar micro-device manufactured according to the manufacturing method of the fourth aspect.
According to a preferred embodiment of the invention, the invention provides an iron-based amorphous alloy which has a stable vortex magnetic structure at 0 ℃ or higher, and the manufactured Hall strip micro-device can measure a large topological Hall effect.
The invention provides an iron-based amorphous alloy, which comprises the following components in percentage by weight: fe 3 Y，Fe 2 Y，Fe 2 Tb，Fe 95 Zr 5 ，Fe 90 Zr 10 ，Fe 75 Zr 25 ，Fe 86 B 14 ，Fe 83 B 17 ，Fe 80 B 20 ，Fe 78 B 12 Si 10 ，Fe 78 (SiB) 22 ，Fe 78 B 13 Si 9 ，Fe 76 B 12 Si 12 ，Fe 75 B 15 Si 10 ，Fe 73 B 15 Si 10 ，Fe 67 Co 8 B 14 Si 11 ，(Fe 0.75 Ni 0.25 ) 78 B 12 Si 10 ，(Fe 0.5 Ni 0.5 ) 78 B 12 Si 10 ，(Fe 0.25 Ni 0.75 ) 78 B 12 Si 10 ，(Fe 0.125 Ni 0.875 ) 78 B 12 Si 10 ，Fe 5 Co 75 B 15 Si 5 ，Fe 40 Ni 40 B 20 . The preparation method comprises the following steps:
1) Preparing materials: batching according to the atomic mole ratio required by the composition of the iron-based amorphous alloy;
2) Smelting: in an electric arc furnace adsorbed by a titanium ingot and protected by argon, smelting and uniformly mixing the ingredients in the step 1), and cooling to obtain a master alloy;
3) Belt throwing: and (3) carrying out induction melting on the master alloy prepared in the step 2) by using a single-roller melt-spinning method, and spraying the master alloy onto a water-cooled copper roller in the argon protection to obtain the iron-based amorphous alloy strip.
And further, processing the Hall strip micro device for measurement by utilizing a laser processing technology according to a design drawing of the Feng-shaped Hall strip.
Further, by using the iron-based master alloy ingot obtained in the step 2) as a target material, plating a Hall bar micro device for measurement on a substrate provided with a Hall bar mask plate in a shape like a Chinese character feng through an ion beam sputtering film plating machine.
Further, the iron-based amorphous alloy is in a strip shape prepared by single-roller melt-spinning.
Furthermore, the Hall strip micro-device is obtained by cutting an iron-based amorphous alloy strip by using a laser processing technology.
Further, the Hall strip micro-device is shaped like a Chinese character feng, as shown in the attached figure 1.
Further, a standard sample which can be used for observing in a JEOL 2100F type Lorentz transmission electron microscope is prepared in liquid nitrogen through a pitter, ion thinning and the like.
Further, the Hall bar micro-device is a vortex magnetic structure stable at room temperature. As shown in fig. 3, which is the vortex magnetic structure observed at room temperature.
Further, a master alloy of the iron-based amorphous alloy is used as a target material for sputtering coating.
Furthermore, the mask plate is shaped like a Chinese character feng, and two Chinese characters feng are arranged on one plate.
Further, the thickness of the Hall strip film prepared by ion beam sputtering coating is 50nm.
The invention relates to a Feng-shaped Hall strip micro device, and the raw materials are iron-based amorphous alloys with non-collinear magnetic structures. The Hall strip micro-device has two forms, one is cut from an iron-based amorphous alloy strip according to a Feng-shaped drawing by using a laser processing technology. The other is a film with the thickness of about 50nm obtained by taking a master alloy ingot of the iron-based amorphous alloy as a sputtering target and utilizing a Feng-shaped mask plate through ion beam sputtering coating. In addition, a stable vortex magnetic structure at room temperature was also observed using a lorentz transmission electron microscope. The Hall strip micro device prepared by the invention has a vortex magnetic structure with stable room temperature and a large topological Hall effect, namely an extra Hall signal generated by the topological magnetic structure can be used as a reading signal of a next-generation nonvolatile magnetic memory device, and has a great application prospect.
The iron-based amorphous alloy and the Hall strip micro device thereof have the following beneficial effects that:
1. the ferromagnetic amorphous alloy has higher Curie temperature and has a non-collinear magnetic structure due to competitive magnetic interaction, so that the ferromagnetic amorphous alloy is very suitable for obtaining a stable topological magnetic structure above room temperature and a topological Hall effect.
2. The Hall strip micro device prepared by the invention has a vortex magnetic structure with stable room temperature and a large topological Hall effect, namely an extra Hall signal generated by the topological magnetic structure can be used as a reading signal of a next-generation nonvolatile magnetic memory device, and has a great application prospect.
Drawings
Embodiments of the invention are described in detail below with reference to the attached drawing figures, wherein:
fig. 1 shows a design drawing of a hall bar of a Chinese character feng shape used for a laser processing in example 1.
Fig. 2 shows a schematic diagram of a laser-processed zigzag device in example 1.
Fig. 3 shows a mask plate schematic diagram of a hall bar in a shape like a Chinese character feng for sputter coating in example 2, and shows a schematic diagram of a hall bar micro device in a thin film form after being coated by sputtering.
FIG. 4 shows an X-ray diffraction pattern of an amorphous structural characterization of a Hall bar micro-device in the form of a thin film obtained by sputter coating in example 2.
Fig. 5 shows a magnetic vortex structure of the fe-based amorphous alloy ribbon prepared in example 3 in example 1, which is stable at room temperature, wherein fig. 5A shows a lorentz transmission electron microscope image in an under-focused mode, and the black spots shown in fig. 5A are the magnetic vortex structure; FIG. 5B shows a Lorentzian TEM image of the through focus mode, where the white spots shown in FIG. 5B are the magnetic vortex structures; FIG. 5C shows Lorentz transmission electron microscopy images reconstructed from contrast transport equations, with the different contrasts of the spots shown in FIG. 5C being the in-plane distribution of the spin magnetic moments.
Detailed Description
The invention is further illustrated by the following specific examples, which, however, are to be construed as merely illustrative, and not limitative of the remainder of the disclosure in any way whatsoever.
This section generally describes the materials used in the testing of the present invention, as well as the testing methods. Although many materials and methods of operation are known in the art for the purpose of carrying out the invention, the invention is nevertheless described herein in as detail as possible. It will be apparent to those skilled in the art that the materials and methods of operation used in the present invention are well within the skill of the art, provided that they are not specifically illustrated.
The reagents and instrumentation used in the following examples are as follows:
materials:
fe, B, si, available from nonferrous metals, inc. of the best Ming platinum industry, beijing.
Silicon dioxide substrates, available from czochralski electronics technologies, ltd.
The instrument comprises the following steps:
the electric arc furnace is purchased from Beijing Tekko electro-optical technology Co., ltd, model WK-II non-consumable vacuum electric arc furnace.
Transmission electron microscopy was purchased from JEOL 2100F, japan Electron Ltd.
Dimple apparatus, available from Gatan corporation, usa, model 656.
An ion beam sputtering coating machine, which is purchased from the ion beam technology research institute of Edwaes, beijing, inc., model LDJ-3B.
Laser machining, available from photonics Industries international, inc., model RX-355-20.
Example 1
This example illustrates the fabrication of a Hall bar micro-device according to the invention.
The preparation method comprises the following steps:
(1) Preparation of Fe 78 B 13 Si 9 A master alloy ingot. And (2) mixing the components according to the molar ratio of Fe, B and Si of 78 78 B 13 Si 9 And (4) mother alloy ingot.
(2) Preparation of Fe 78 B 13 Si 9 Amorphous alloy ribbon. Using a single-roller melt-spinning method to mix Fe prepared in the step (1) 78 B 13 Si 9 The master alloy ingot is injected to a water-cooled copper roller in the argon protection to obtain Fe through induction melting 78 B 13 Si 9 Amorphous alloy ribbon.
(3) And (4) preparing the Hall strip micro device in the shape of the Chinese character feng. Utilizing laser processing technology, and according to the design drawing of the Feng-shaped Hall strip shown in the attached figure 1, fe prepared in the step (2) 78 B 13 Si 9 The amorphous alloy strip is cut into Hall strip micro-devices which can be used for measurement.
As shown in fig. 2, fig. 2 is a schematic diagram of a laser-processed device shaped like a Chinese character feng.
Example 2
This example illustrates the fabrication of a Hall bar micro-device according to the invention.
The preparation method comprises the following steps:
(1) Preparation of Fe 78 B 13 Si 9 A master alloy ingot. And (2) mixing the components according to the molar ratio of Fe, B and Si of 78 78 B 13 Si 9 A master alloy ingot.
(2) Preparation of Fe 78 B 13 Si 9 Amorphous alloy ribbon. Using a single-roller melt-spinning method to mix Fe prepared in the step (1) 78 B 13 Si 9 The master alloy ingot is injected to a water-cooled copper roller in the argon protection to obtain Fe through induction melting 78 B 13 Si 9 Amorphous alloy ribbon.
(3) Fe prepared in the step (1) 78 B 13 Si 9 Master alloy ingot or Fe obtained in step (2) 78 B 13 Si 9 The amorphous alloy strip is made into a sputtering target material, a mask plate in a shape like a Chinese character feng shown in figure 3 is covered on a silicon dioxide substrate, and then an amorphous alloy film with the thickness of about 50nm is deposited by an ion beam sputtering deposition method, so that the Hall strip micro-device in a film form which can be used for measurement is obtained.
As shown in fig. 3, fig. 3 shows a schematic diagram of a hall-bar micro-device in the form of a thin film after being coated by sputtering.
Examples 3 to 23
This example illustrates the fabrication of a Hall bar micro-device according to the invention.
The specific raw materials and proportions are shown in table 1, the preparation method is the same as that of the embodiment 1 or 2 except for the raw materials and proportions, and the following iron-based amorphous alloy can be prepared by the method of the embodiment 1 or 2.
TABLE 1 raw materials and compounding ratio of Fe-based amorphous alloy
Example 24
This example is intended to illustrate the topological magnetic structure in the amorphous alloy of the hall bar micro device according to the present invention, which is fabricated by the fabrication method of example 1.
Firstly, a standard sample which can be directly observed under a transmission electron microscope is manufactured, and the standard sample is prepared in liquid nitrogen through a pitter, ion thinning and the like. The samples of examples 1, 3 to 23 prepared by the preparation method of example 1 were then observed by JEOL 2100F type lorentz transmission electron microscopy, and the obtained samples were all in the form of stripes in bulk form.
FIG. 5 is a vortex structure observed at room temperature. FIG. 5 shows a stable magnetic vortex structure of the Fe-based amorphous alloy strip prepared in example 1 at room temperature, wherein FIG. 5A shows a Lorentz transmission electron micrograph in an under-focus mode, and black spots shown in FIG. 5A are the magnetic vortex structure; FIG. 5B shows a Lorentz transmission electron micrograph in an overfocus mode, wherein the white spots shown in FIG. 5B are gyromagnetic structures; FIG. 5C shows Lorentz transmission electron microscopy images reconstructed from contrast transport equations, with the different contrasts of the spots shown in FIG. 5C being the in-plane distribution of the spin magnetic moments.
Example 25
This example is intended to illustrate the topological magnetic structure in the amorphous alloy of the hall bar micro device according to the present invention, which is fabricated by the fabrication method of example 2.
Example 2 is an amorphous alloy thin film prepared by a sputtering deposition method, and the characterization method of the hall bar micro device prepared by the method is similar to that of example 1. The device prepared by the method of example 1 and the device prepared by the method of example 2 both varied in dimensions, one being a three-dimensional-like mass and one being a two-dimensional-like film, but the compositions were identical. Therefore, the physical mechanisms determining the appearance of the topological magnetic structure, such as magnetic reluctance and DMI action, are also similar, so that the topological magnetic structure of the same type appears in the same-component material under the two dimensions, namely the topological magnetic structure appears in a same-component block body and also appears in a thin film form.
Therefore, the steps and methods for observing the topological magnetic structure in the thin film device prepared in example 2 are as follows: the substrate is a silicon nitride window, and can be directly placed in a sample cavity of a Lorentz transmission electron microscope to start observation after sputtering coating.
FIG. 4 shows an X-ray diffraction pattern of an amorphous structural characterization of a Hall bar micro-device in the form of a thin film obtained by sputter coating in example 2. As can be seen from fig. 4, the topological magnetic structure in the amorphous alloy of the hall bar micro device manufactured by the manufacturing method of example 2 is the present invention.
Example 26
This example illustrates that the hall bar micro-device prepared by the present invention has a vortex magnetic structure stable at room temperature, and a large topological hall effect, i.e., an additional hall signal generated by the topological magnetic structure.
The hall bar micro device prepared by the method of embodiment 1 or 2 obtains a hall signal by measuring a Physical Property Measurement System (PPMS), obtains a magnetization-magnetic field curve by measuring a Vibration Sample Magnetometer (VSM), and then obtains a signal of a topological hall effect by theoretical analysis of the topological hall effect. Therefore, the Hall strip micro-device prepared by the invention has a vortex magnetic structure with stable room temperature and a large topological Hall effect, namely an additional Hall signal generated by the topological magnetic structure.
Example 27
This example illustrates the amorphous morphology and cooling rate of the hall bar micro devices prepared in examples 1 and 2.
Example 1 is an iron-based amorphous alloy ribbon prepared by a laser processing method; example 2 is an fe-based amorphous alloy thin film prepared by a sputter deposition method. The cooling rate of the preparation method of the example 2 can easily exceed 109K/s, and the cooling rate of the preparation method of the single-roller melt-spinning of the example 1 is in the order of 106K/s. Thus, both the sputter deposited film and the laser processed ribbon are amorphous with the same composition, and the cooling rate of example 2 is much greater than that of the single roll melt spinning method used in example 1.
Although the present invention has been described to a certain extent, it is apparent that appropriate changes in the respective conditions may be made without departing from the spirit and scope of the present invention. It is to be understood that the invention is not limited to the described embodiments, but is to be accorded the scope consistent with the claims, including equivalents of each element described.
Claims (36)
1. A Hall strip micro-device, characterized in that: the raw materials for preparing the Hall bar micro-device comprise iron-based amorphous alloy, and the Hall bar micro-device has a stable non-collinear magnetic structure at the temperature of more than or equal to 0 ℃ and a topological Hall effect;
the iron-based amorphous alloy has a stable non-collinear magnetic structure at a temperature of more than or equal to 0 ℃; wherein,
the iron-based amorphous alloy is selected from one or more of the following: fe 3 Y，Fe 2 Y，Fe 2 Tb，Fe 95 Zr 5 ，Fe 90 Zr 10 ，Fe 75 Zr 25 ，Fe 86 B 14 ，Fe 83 B 17 ，Fe 80 B 20 ，Fe 78 B 12 Si 10 ，Fe 78 (SiB) 22 ，Fe 78 B 13 Si 9 ，Fe 76 B 12 Si 12 ，Fe 75 B 15 Si 10 ，Fe 73 B 15 Si 10 ，Fe 67 Co 8 B 14 Si 11 ，(Fe 0.75 Ni 0.25 ) 78 B 12 Si 10 ，(Fe 0.5 Ni 0.5 ) 78 B 12 Si 10 ，(Fe 0.25 Ni 0.75 ) 78 B 12 Si 10 ，(Fe 0.125 Ni 0.875 ) 78 B 12 Si 10 ，Fe 5 Co 75 B 15 Si 5 ，Fe 40 Ni 40 B 20 。
2. The hall bar micro-device of claim 1, wherein the non-collinear magnetic structure is selected from one or more of: vortex magnetic structure, mai tough magnetic structure, sgermin magnetic structure, hopffer magnetic structure.
3. The hall bar micro-device of claim 2, wherein the non-collinear magnetic structure is a vortex magnetic structure.
4. The Hall bar micro-device of claim 1, wherein the temperature of 0 ℃ or higher is 0-400 ℃.
5. The Hall strip micro-device of claim 4, wherein the temperature of 0 ℃ or higher is 0-300 ℃.
6. The Hall strip micro-device of claim 5, wherein the temperature of 0 ℃ or more is 0 ℃ to 200 ℃.
7. The Hall bar micro-device of claim 6, wherein the ≥ 0 ℃ temperature is 77 ℃.
8. The hall bar micro-device of any one of claims 1 to 7, wherein:
the non-collinear magnetic structure is selected from one or more of: vortex magnetic structure, mai tough magnetic structure, si Ge Ming Zi magnetic structure, hopflug Zi magnetic structure; and/or
The temperature of 0 ℃ or higher is 0-400 ℃.
9. The hall bar micro-device of claim 8, wherein:
the non-collinear magnetic structure is a vortex magnetic structure; and/or
The temperature of more than or equal to 0 ℃ is 0-300 ℃.
10. The hall bar micro-device of claim 9, wherein: the temperature of 0 ℃ or higher is 0-200 ℃.
11. The hall bar micro-device of claim 10, wherein: the temperature of more than or equal to 0 ℃ is 77 ℃.
12. The hall bar micro-device of claim 8, wherein: the Hall strip micro device is shaped like a Chinese character feng.
13. Method for the production of a hall bar micro-device according to any of the claims 1 to 12, characterized in that it comprises the following steps:
(1) Preparing materials, smelting and cooling to obtain an iron-based master alloy ingot;
(2) The iron-based master alloy ingot prepared in the step (1) is subjected to strip throwing to obtain an iron-based amorphous alloy strip;
(3) Through processing, a Hall bar micro device which can be used for measurement is prepared.
14. The method according to claim 13, wherein the step (2) further comprises the steps of: and (2) carrying out induction melting on the iron-based master alloy ingot prepared in the step (1), and spraying the iron-based master alloy ingot onto a water-cooled copper roller to obtain an iron-based amorphous alloy strip.
15. The production method according to claim 13, wherein in the step (2): the melt-spinning method is a single-roller melt-spinning method.
16. The production method according to claim 14, wherein in the step (2): the injected shielding gas was argon.
17. The method according to claim 13, wherein the step (3) further comprises the steps of: and (3) cutting the iron-based amorphous alloy strip prepared in the step (2) into the Hall strip micro device for measurement by processing according to a Hall strip design drawing.
18. The production method according to claim 17, wherein in the step (3): the method of processing is selected from one or more of the following: laser processing, linear cutting processing and manual scissors processing; and/or
The Hall strip design drawing is in a shape like a Chinese character feng.
19. The production method according to claim 18, wherein in the step (3): the processing method is laser processing.
20. The method of claim 19, wherein 1-4 hall bar micro devices can be prepared by the laser processing.
21. The method of claim 20, wherein 1-3 h-shaped hall bar micro devices can be prepared by the laser processing.
22. The method of claim 21, wherein 1-2 hall bar micro devices can be prepared by the laser processing.
23. Method for the production of a hall bar micro-device according to any of the claims 1 to 12, characterized in that it comprises the following steps:
(1) Preparing materials, smelting and cooling to obtain an iron-based master alloy ingot;
(2) The iron-based master alloy ingot prepared in the step (1) is subjected to strip throwing to obtain an iron-based amorphous alloy strip;
(3) And (3) taking the iron-based master alloy ingot prepared in the step (1) or the iron-based amorphous alloy strip prepared in the step (2) as a target material to prepare a Hall strip micro device for measurement.
24. The method according to claim 23, wherein the step (2) further comprises the steps of: and (3) taking the iron-based master alloy ingot prepared in the step (1) or the iron-based amorphous alloy strip prepared in the step (2) as a sputtering target material, covering a mask on a substrate, and sputtering and depositing an amorphous alloy film to obtain the Hall strip micro device for measurement.
25. The method for manufacturing a hall bar micro-device according to claim 24, wherein in the step (2):
the method of sputter deposition is selected from one or more of the following: ion beam sputtering deposition, magnetron sputtering, laser evaporation deposition;
the mask is in a shape like a Chinese character feng; and/or
The material of the substrate is selected from one or more of the following: monocrystalline silicon slice, polycrystalline silicon slice, amorphous silicon slice, silicon nitride slice, silicon dioxide glass slice, polyethylene plastic slice.
26. The method for manufacturing a hall bar micro-device of claim 25, wherein in the step (2):
the sputtering deposition method is ion beam sputtering deposition; and/or
The substrate is made of a monocrystalline silicon wafer.
27. The method of manufacturing according to claim 23, wherein:
the Hall strip micro device is in a thin film form; and/or
The thickness of the Hall strip micro device is 30-70 nm.
28. The method of manufacturing according to claim 24, wherein: each mask plate comprises 1-4 Chinese characters.
29. The method of manufacturing according to claim 28, wherein:
each mask plate comprises 1-3 Chinese characters.
30. The method of manufacturing according to claim 27, wherein:
the thickness of the Hall strip micro device is 40-60 nm.
31. The method of manufacturing according to claim 29, wherein:
each mask plate comprises 2 'feng' characters.
32. The method of manufacturing according to claim 30, wherein:
the thickness of the Hall strip micro device is 45-55 nm.
33. The method of manufacturing according to claim 32, wherein:
the thickness of the Hall strip micro device is 50nm.
34. The production method according to claim 13 or 23, wherein in the step (1): the melting is done in an electric arc furnace.
35. The method according to claim 34, wherein in the step (1):
the electric arc furnace is adsorbed by a titanium ingot; and/or
The protective gas of the electric arc furnace is argon.
36. A non-volatile magnetic memory device, characterized in that its read signal is generated by a hall-bar micro-device according to any of claims 1 to 12 or manufactured according to the manufacturing method of any of claims 13 to 35.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111484363.3A CN114134434B (en) | 2021-12-07 | 2021-12-07 | Iron-based amorphous alloy, hall strip micro device thereof and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111484363.3A CN114134434B (en) | 2021-12-07 | 2021-12-07 | Iron-based amorphous alloy, hall strip micro device thereof and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114134434A CN114134434A (en) | 2022-03-04 |
| CN114134434B true CN114134434B (en) | 2022-12-13 |
Family
ID=80384392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111484363.3A Active CN114134434B (en) | 2021-12-07 | 2021-12-07 | Iron-based amorphous alloy, hall strip micro device thereof and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114134434B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204243084U (en) * | 2014-09-25 | 2015-04-01 | 中国科学院物理研究所 | Hall bar micro element |
| CN112680705A (en) * | 2020-12-14 | 2021-04-20 | 天津大学 | Epitaxial Pt/gamma' -Fe with room temperature topological Hall effect4N/MgO heterostructure and preparation method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882347B (en) * | 2014-03-05 | 2016-11-16 | 清华大学 | The block of high magnetic element content and ribbon Fe-based amorphous alloy and preparation method |
| CN106544603A (en) * | 2015-09-21 | 2017-03-29 | 南京理工大学 | A kind of cobalt base amorphous magnetically soft alloy of high-curie temperature and preparation method thereof |
| US11495381B2 (en) * | 2018-03-02 | 2022-11-08 | The Trustees of the California State University | Two-dimensional Dirac half-metal ferromagnets and ferromagnetic materials for spintronic devices |
| US11374163B2 (en) * | 2018-06-19 | 2022-06-28 | Intel Corporation | Spin orbit memory with multiferroic material |
-
2021
- 2021-12-07 CN CN202111484363.3A patent/CN114134434B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204243084U (en) * | 2014-09-25 | 2015-04-01 | 中国科学院物理研究所 | Hall bar micro element |
| CN112680705A (en) * | 2020-12-14 | 2021-04-20 | 天津大学 | Epitaxial Pt/gamma' -Fe with room temperature topological Hall effect4N/MgO heterostructure and preparation method |
Non-Patent Citations (4)
| Title |
|---|
| A thermodynamic assessment of the iron–yttrium system;S. Kardellass等;《Journal of Alloys and Compounds》;20130719;第583卷;第598-606页 * |
| EFFECTS OF FIELD ANNEALING ON THE MAGNETIC CHARACTERISTICS AND MAGNETIC LOSSES OF AMORPHOUS RIBBONS Fe78Sil0B12;Y.C. KUO 等;《Journal of Magnetism and Magnetic Materials》;19831231;第31-34卷;第1563-1564页 * |
| MAGNETIC AND MECHANICAL PROPERTIES OF AMORPHOUS Fe-Y ALLOYS;S. ISHIO 等;《Journal of Magnetism and Magnetic Materials》;19861231;第60卷;第236-242页 * |
| Theory of magnetism in amorphous Fe-Zr alloys;M. Yu等;《Journal of Magnetism and Magnetic Materials》;19961231;第162卷;第189-201页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114134434A (en) | 2022-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ohnuma et al. | Co-Zr-O nano-granular thin films with improved high frequency soft magnetic properties | |
| Ohnuma et al. | FeCo–Zr–O nanogranular soft-magnetic thin films with a high magnetic flux density | |
| Löewe et al. | Temperature-dependent Dy diffusion processes in Nd–Fe–B permanent magnets | |
| Liu et al. | Giant magnetoresistance at 300 K in single crystals of La0. 65 (PbCa) 0.35 MnO3 | |
| Wu et al. | Microstructure and properties of nanocrystalline Fe–Zr–Nb–B soft magnetic alloys with low magnetostriction | |
| Zhu et al. | Proximity-induced magnetism and an anomalous Hall effect in Bi 2 Se 3/LaCoO 3: A topological insulator/ferromagnetic insulator thin film heterostructure | |
| Rial et al. | Application of a novel flash-milling procedure for coercivity development in nanocrystalline MnAl permanent magnet powders | |
| Palanisamy et al. | Grain boundary segregation, phase formation, and their influence on the coercivity of rapidly solidified SmF e 11 Ti hard magnetic alloys | |
| TW201704496A (en) | FeNi alloy composition containing L10-type FeNi ordered phase and produce method, FeNi alloy composition having amorphous main phase, parent alloy of amorphous member, amorphous member, magnetic material, and method for producing magnetic material | |
| CN110541116B (en) | Crystallization-controllable iron-based nanocrystalline magnetically soft alloy | |
| CN102534511B (en) | Film vapor deposition device and application method thereof | |
| Nakajima et al. | Observation of magnetic domain and bubble structures in magnetoelectric S r 3 C o 2 F e 24 O 41 | |
| Choe et al. | Magnetotransport in Fe-intercalated TS 2: Comparison between T= Ti and Ta | |
| Salaheldeen et al. | Influence of nanoholes array geometrical parameters on magnetic properties of Dy–Fe antidot thin films | |
| CN104109822A (en) | A Ni-containing cobalt-based amorphous giant magneto-impedance alloy thin strip and a preparing method thereof | |
| CN114134434B (en) | Iron-based amorphous alloy, hall strip micro device thereof and preparation method thereof | |
| Crisan et al. | Development and structural characterization of exchange-spring-like nanomagnets in (Fe, Co)-Pt bulk nanocrystalline alloys | |
| Zivotsky et al. | Influence of annealing temperature and atmosphere on surface microstructure and magnetism in FINEMET-type FeSiNbCuB ribbons | |
| Crisan et al. | Effect of Mn addition on the thermal stability and magnetic properties of rapidly-quenched L10 FePt alloys | |
| Zhang et al. | Skew scattering dominated anomalous Hall effect in Cox (MgO) 100− x granular thin films | |
| Roman et al. | Facile method of raising the LTP content in Mn-Bi alloys by using sequential separation techniques for Bi and Mn | |
| Li et al. | Influence of thermal annealing on the morphology and magnetic domain structure of Co thin films | |
| Coïsson et al. | Phase transformations and magnetostriction in Fe100− xGax bulk alloys | |
| Shima et al. | Perpendicular magnetic anisotropy and domain structure of L1/sub 0/-ordered FePt films fabricated by monatomic layer control | |
| Sugawara et al. | Measuring magnetisation reversal in micron-sized Nd2Fe14B single crystals by microbeam x-ray magnetic circular dichroism |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |