CN114132893A - Method for manufacturing piezoresistance type angle feedback sensor MOEMS micro-mirror - Google Patents
Method for manufacturing piezoresistance type angle feedback sensor MOEMS micro-mirror Download PDFInfo
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- CN114132893A CN114132893A CN202111479935.9A CN202111479935A CN114132893A CN 114132893 A CN114132893 A CN 114132893A CN 202111479935 A CN202111479935 A CN 202111479935A CN 114132893 A CN114132893 A CN 114132893A
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00198—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
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Abstract
The invention provides a method for preparing a piezoresistance type angle feedback sensor MOEMS micro-mirror, which comprises the following steps: (1) manufacturing a substrate layer, (2) manufacturing an SOI layer, and (3) manufacturing a bonded wafer. The invention can realize the integrated manufacture of the electrostatic driving micro-mirror and the medium isolation piezoresistive feedback sensor, can reduce the leakage current of the piezoresistor to be below several nA orders, and greatly improves the stability of the angle detection sensor.
Description
The technical field is as follows:
the invention relates to the technical field of micro-opto-electro-mechanical technology, in particular to a preparation method of an electrostatic driving MOEMS micro-mirror integrated with a piezoresistive angle feedback sensor.
Background art:
the MOEMS micro-mirror is manufactured by integrating a micro optical mirror surface and an MEMS actuator by utilizing a micro-nano processing technology to form a high dynamic optical element, and can realize the rapid control of light beams in space, thereby generating revolutionary dynamic optics and forming a series of innovative applications, such as tunable optical attenuators, optical switches, tunable optical filters and the like in the field of optical communication and scanning micro-mirrors in the field of projection display.
The MOEMS micro-mirror can be divided into four types of electrostatic driving, electromagnetic driving, electrothermal driving and piezoelectric driving according to the driving mode, wherein the electrostatic driving MOEMS micro-mirror has the advantages of small volume, low power consumption, relatively simple process and the like, the rapid development of the electrostatic driving MOEMS micro-mirror is promoted, and a large amount of applications are realized.
In order to better realize the precise control of the deflection angle of the electrostatically driven micromirror, an angle feedback function is usually integrated to realize the closed-loop control of the angle.
The angle feedback sensor is generally divided into a capacitive detection principle and a piezoresistive detection principle, a capacitive feedback sensor is generally adopted by a traditional electrostatic driving micromirror, for example, an MEMS micromirror based on capacitive detection feedback control is provided in an invention patent CN109814251A applied by Xulixin et al of university of Beijing finishing worker in China, a method for reducing coupling interference of the electrostatic micromirror angle detection sensor is provided in an invention patent CN111348618A applied by Lianhuan et al of Western Ancheng opto-electronic technology Limited company in China, and the capacitive detection principle is also adopted, so that the capacitive detection sensor has good process compatibility with the electrostatic driving micromirror, but has high requirement on a processing circuit, a complex control circuit and low detection precision, and under the condition of a large deflection angle, the detection capacitive comb teeth are in a non-overlapping state, and the angle detection in the whole process cannot be carried out. The piezoresistive detection scheme has high precision and a simple processing circuit, but the traditional piezoresistive scheme is isolated from a substrate through a PN junction and is widely applied to an electromagnetic drive scanning mirror (for example, CN 109160481A), and the substrate of an electrostatic drive micro-mirror is generally required to be connected with a high potential, so that the isolation of the PN junction is easy to fail, and therefore, the piezoresistive detection scheme cannot be used in the electrostatic drive micro-mirror.
The invention content is as follows:
the invention provides a preparation method of a piezoresistive angle feedback sensor MOEMS micro-mirror, aiming at overcoming the defects in the prior art.
The application provides the following technical scheme:
a method for manufacturing a piezoresistive angle feedback sensor MOEMS micro-mirror is characterized by comprising the following steps: it comprises the following steps: the manufacturing method of the substrate layer comprises the steps of arranging a silicon dioxide layer on a silicon wafer, and arranging a groove on the silicon wafer;
manufacturing an SOI layer, namely laminating and bonding a plurality of crystalline silicon wafers together through an isolation layer, bonding a substrate silicon layer below one crystalline silicon through an isolation layer, etching a group of blind hole structures on the other crystalline silicon to obtain a group of first comb teeth, and stopping etching until the next crystalline silicon layer;
and (III) manufacturing a bonded wafer, bonding the other crystalline silicon and the silicon dioxide layer together, so that the group of first comb teeth and the grooves are distributed correspondingly, then removing the substrate silicon layer, arranging a group of piezoresistors on the isolation layer, arranging a passivation layer on the piezoresistors and the isolation layer, arranging lead holes correspondingly matched with the piezoresistors on the passivation layer, arranging metal leads on the lead holes and the passivation layer, and etching the passivation layer downwards to form a group of through hole structures, thereby obtaining a group of second comb teeth.
On the basis of the technical scheme, the following further technical scheme can be provided:
the crystalline silicon is a monocrystalline silicon piece, and the isolation layer is silicon dioxide.
In the step of manufacturing the (second) SOI layer, three pieces of crystalline silicon are sequentially bonded with an upper layer of crystalline silicon, a middle layer of crystalline silicon and a lower layer of crystalline silicon from top to bottom through the isolation layer, and the thickness of the lower layer of crystalline silicon is smaller than that of the other two layers of crystalline silicon.
In the step of manufacturing the (second) SOI layer, two pieces of crystalline silicon are sequentially bonded with an upper layer of crystalline silicon and a lower layer of crystalline silicon from top to bottom through the isolation layer.
And in the step (III) of manufacturing the bonded wafer, the group of piezoresistors is obtained by sequentially photoetching and etching the lower layer of crystal silicon.
And in the step (III) of manufacturing the bonded wafer, a polycrystalline silicon layer is generated on the isolation layer on the lower crystalline silicon, and then the polycrystalline silicon layer is etched and etched sequentially to prepare a group of piezoresistors.
The number of the piezoresistors is smaller than that of the second comb teeth, and the piezoresistors are all positioned on the second comb teeth (9).
And the group of second comb teeth and the group of first comb teeth are distributed in a staggered manner in the process of manufacturing the (third) bonded wafer.
The invention has the advantages that:
the invention has simple steps, is convenient to operate, can realize the integrated manufacture of the electrostatic driving micro-mirror and the dielectric isolation piezoresistive feedback sensor, can reduce the leakage current of the piezoresistor to be below several nA orders of magnitude, and greatly improves the stability of the angle detection sensor.
Description of the drawings:
FIG. 1 is a schematic diagram of the structure of the present invention after completion of a substrate layer(s) fabrication step;
FIG. 2 is a schematic view of the structure of example 1 after completion of the SOI layer fabrication step (II);
FIG. 3 is a schematic diagram showing the structure of the bonded SOI layer and the substrate layer in the step of fabricating the bonded wafer of example 1 (III);
FIG. 4 is a schematic view of the structure after exposure of the underlying crystalline silicon in the bonded wafer fabrication step of example 1 (III);
FIG. 5 is a schematic diagram showing the structure of the bonded wafer of example 1 (III) after the piezoresistors are prepared;
FIG. 6 is a schematic diagram showing the structure after the fabrication of a wire hole in the bonded wafer fabrication step of example 1 (III);
FIG. 7 is a schematic diagram showing the structure of a bonded wafer after metal wires are prepared in the third step of manufacturing a bonded wafer according to example 1;
FIG. 8 is a schematic view of the structure of example 1 (III);
FIG. 9 is a schematic structural view of example 2 after completion of the SOI layer (II) fabrication step;
FIG. 10 is a schematic diagram showing a structure after bonding an SOI layer and a substrate layer in the step of manufacturing a bonded wafer according to the third embodiment 2;
FIG. 11 is a schematic structural view of a bonded wafer of example 2 (III) after a polysilicon layer is formed;
FIG. 12 is a schematic diagram showing the structure of a varistor manufactured in the step of manufacturing a bonded wafer according to EXAMPLE 2 (III); FIG. 13 is a schematic view of the structure after the fabrication of wire holes in the bonded wafer fabrication step of example 2 (III);
FIG. 14 is a schematic view showing a structure after metal wires are formed in the step of fabricating a bonded wafer according to the third embodiment of the present invention;
fig. 15 is a schematic structural view after the production of example 2 (iii).
The specific implementation mode is as follows:
example 1:
as shown in fig. 1-8, a method for manufacturing a piezoresistive angle feedback sensor MOEMS micromirror is characterized in that: it comprises the following steps: the substrate layer is manufactured, the substrate layer comprises a silicon wafer 1, a silicon dioxide layer 2 with the thickness of 0.5-2 microns is thermally grown on the upper surface and the lower surface of the silicon wafer 1, and then a groove 3 is formed in the silicon wafer 1 downwards in a deep silicon etching process, wherein the depth of the groove is generally hundreds of microns.
And (II) manufacturing an SOI layer, namely bonding three pieces of crystalline silicon which are monocrystalline silicon wafers with upper, middle and lower layers of crystalline silicon 4a, 4b and 4c from top to bottom through an isolation layer 5, wherein the thickness of the lower layer of crystalline silicon 4b is smaller than that of the other two layers of crystalline silicon, and the thicknesses of the upper and middle crystalline silicon 4a and 4b are 10-100 microns. On the bottom surface of the underlying crystalline silicon 4b is further spaced a substrate silicon layer 6 by an isolation layer 5. The isolating layer 5 is silicon dioxide with the thickness of 0.5-2 μm, the crystalline silicon is a monocrystalline silicon wafer,
a pattern mask is arranged on the upper layer crystalline silicon 4a by adopting a photoetching process, and then a group of blind hole structures 10 are etched through deep silicon, so that a group of first comb teeth 7 are obtained on the upper layer crystalline silicon 4a, and the etching is stopped until the crystalline silicon 4b of the lower middle layer.
And (III) manufacturing a bonded wafer, namely reversely buckling the upper-layer crystalline silicon 4a on the silicon dioxide layer 2 and adjusting the position to ensure that the first comb teeth 7 and the grooves 3 are distributed correspondingly, and then bonding the upper-layer crystalline silicon 4a and the silicon dioxide layer 2 together.
And then removing the substrate silicon layer 6 and the isolation layer 5 between the substrate silicon layer 6 and the lower crystalline silicon 4b, and then sequentially forming a group of piezoresistors 8 on the upper surface of the lower crystalline silicon 4b through photoetching and silicon etching processes, wherein the piezoresistors 8 are distributed at intervals, and the piezoresistors 8 are positioned in a stress concentration area of the middle crystalline silicon 4b and distributed correspondingly to the blind hole structures 10. A passivation layer 14 covering the piezoresistors 8 is provided on the isolation layer 5 on the upper surface of the medium crystal silicon 4 b. Lead holes 15 corresponding to the piezoresistors 8 are arranged on the passivation layer 14, metal leads 16 are arranged on the lead holes 15, and the metal leads 16 are also arranged at the two end parts of the isolation layer 5 on the upper surface of the medium crystal silicon 4 b.
A set of via structures 11 is also etched down on the passivation layer 14, resulting in a set of second comb teeth 9 on the medium crystal silicon 4 b. The group of second comb teeth 9 and the group of first comb teeth 7 are distributed in a staggered mode, and the piezoresistors 8 are respectively located on the corresponding second comb teeth 9. The through hole structure 11 is communicated with the blind hole structure 10, so that the through hole structure 11, the blind hole structure 10 and the groove 3 are communicated with each other.
Example 2:
as shown in fig. 9-15 and fig. 1, a method for manufacturing a piezoresistive angle feedback sensor MOEMS micromirror is characterized in that: it comprises the following steps: the substrate layer is manufactured, the substrate layer comprises a silicon wafer 1, a silicon dioxide layer 2 with the thickness of 0.5-2 microns is thermally grown on the upper surface and the lower surface of the silicon wafer 1, and then a groove 3 is formed in the silicon wafer 1 downwards in a deep silicon etching process, wherein the depth of the groove is generally hundreds of microns.
And (II) manufacturing an SOI layer, namely bonding three pieces of crystalline silicon which are monocrystalline silicon wafers with an upper layer of crystalline silicon 14a and a lower layer of crystalline silicon 14b from top to bottom in sequence through an isolation layer 5, wherein the thicknesses of the upper layer of crystalline silicon 14a and the lower layer of crystalline silicon 14b are 10-100 microns. A substrate silicon layer 6 is further spaced on the bottom surface of the underlying crystalline silicon 14b by an isolation layer 5. The isolating layer 5 is silicon dioxide with the thickness between, the crystalline silicon is a monocrystalline silicon piece,
a pattern mask is arranged on the upper layer crystalline silicon 14a by adopting a photoetching process, and then a group of blind hole structures 10 are etched through deep silicon, so that a group of first comb teeth 7 are obtained on the upper layer crystalline silicon 4a, and the etching is stopped until the crystalline silicon 4b of the lower middle layer.
And (III) manufacturing a bonded wafer, namely reversely buckling the upper-layer crystalline silicon 14a on the silicon dioxide layer 2 and adjusting the position to ensure that the first comb teeth 7 and the grooves 3 are distributed correspondingly, and then bonding the upper-layer crystalline silicon 14a and the silicon dioxide layer 2 together.
The substrate silicon layer 6 is then removed, the isolation layer 5 between the substrate silicon layer 6 and the underlying crystalline silicon 4b is left, and then a polysilicon layer 12 is deposited on the isolation layer 5 by an LPCVD process. And then, a group of piezoresistors 8 are formed on the polycrystalline silicon layer 12 through photoetching and silicon etching processes in sequence, the piezoresistors 8 are distributed at intervals, and the piezoresistors 8 are positioned in the stress concentration area of the medium crystalline silicon 4b and distributed correspondingly to the blind hole structure 10. A passivation layer 14 covering the piezoresistors 8 is provided on the isolation layer 5 on the upper surface of the medium crystal silicon 4 b. Lead holes 15 corresponding to the piezoresistors 8 are arranged on the passivation layer 14, metal leads 16 are arranged on the lead holes 15, and the metal leads 16 are also arranged at the two end parts of the isolation layer 5 on the upper surface of the medium crystal silicon 4 b.
A set of via structures 11 is etched down on the passivation layer 14, resulting in a set of second comb teeth 9 on the medium crystal silicon 4 b. The group of second comb teeth 9 and the group of first comb teeth 7 are distributed in a staggered mode, and the piezoresistors 8 are respectively located on the corresponding second comb teeth 9. The through hole structure 11 is communicated with the blind hole structure 10, so that the through hole structure 11, the blind hole structure 10 and the groove 3 are communicated with each other.
In embodiments 1 and 2, since the second comb teeth 9 and the first comb teeth 7 are offset from each other and have a relatively small thickness, the second comb teeth 9 and the first comb teeth 7 have the capability of vibrating up and down. Therefore, the rotation of the mirror surface is realized, the direction of the light beam is changed, and the silicon dioxide (the isolation layer 5) with the isolation function is arranged between the piezoresistor 8 and the second comb teeth 9, so that the problem of isolation failure of a piezoresistor and a substrate PN junction in an electrostatic driving structure can be effectively avoided, and the coupling interference of the substrate potential is eliminated, thereby realizing the manufacture of the dielectric isolation device by the whole scheme.
Claims (8)
1. A method for manufacturing a piezoresistive angle feedback sensor MOEMS micro-mirror is characterized by comprising the following steps: it comprises the following steps: manufacturing a substrate layer, wherein the substrate layer comprises a silicon dioxide layer (2) arranged on a silicon wafer (1), and a groove (3) arranged on the silicon wafer (1);
secondly, SOI layer manufacturing, namely, a plurality of crystalline silicon wafers are overlapped and bonded together through an isolation layer (5), a substrate silicon layer (6) is bonded below one crystalline silicon through the isolation layer (5), a group of blind hole structures are etched on the other crystalline silicon, so that a group of first comb teeth (7) is obtained, and the etching is stopped until the next crystalline silicon layer;
and (III) manufacturing a bonded wafer, bonding the other crystalline silicon and the silicon dioxide layer (2) together, so that the group of first comb teeth (7) and the grooves (3) are distributed correspondingly, then removing the substrate silicon layer (6), arranging the group of piezoresistors (8) on the isolation layer (5), arranging the passivation layer (14) on the piezoresistors (8) and the isolation layer (5), arranging the lead holes (15) correspondingly matched with the piezoresistors (8) on the passivation layer (14), arranging the metal leads (16) on the lead holes (15) and the passivation layer (14), and etching the passivation layer (14) downwards to form the group of through hole structures, thereby obtaining the group of second comb teeth (9).
2. The method for manufacturing a piezoresistive angle feedback sensor MOEMS micro-mirror according to claim 1, wherein: the crystalline silicon (4) is a monocrystalline silicon wafer, and the isolation layer (5) is silicon dioxide.
3. The method for manufacturing a piezoresistive angle feedback sensor MOEMS micro-mirror according to claim 1, wherein: in the step of manufacturing the (second) SOI layer, three pieces of crystalline silicon are sequentially bonded with an upper layer of crystalline silicon (4 a), a middle layer of crystalline silicon (4 b) and a lower layer of crystalline silicon (4 c) from top to bottom through an isolation layer (5), and the thickness of the lower layer of crystalline silicon (4 b) is smaller than that of the other two layers of crystalline silicon.
4. The method for manufacturing a piezoresistive angle feedback sensor MOEMS micro-mirror according to claim 1, wherein: in the step of manufacturing the (second) SOI layer, two pieces of crystalline silicon are sequentially bonded with an upper layer of crystalline silicon and a lower layer of crystalline silicon (14 a and 14 b) from top to bottom through an isolation layer (5).
5. The method for manufacturing the piezoresistance type angle feedback sensor MOEMS micro-mirror as claimed in claim 3, wherein: in the step (III) of manufacturing the bonded wafer, the group of piezoresistors (8) is obtained by sequentially photoetching and etching the lower crystalline silicon layer (4 b).
6. The method for manufacturing the piezoresistance type angle feedback sensor MOEMS micro-mirror as claimed in claim 4, wherein: in the third bonding wafer manufacturing step, a polycrystalline silicon layer (15) is generated on the isolation layer (5) on the lower crystalline silicon (14 b), and then the polycrystalline silicon layer (12) is etched and etched sequentially to prepare a group of piezoresistors (8).
7. The method for manufacturing the piezoresistance type angle feedback sensor MOEMS micro-mirror according to the claim 3 or 4, characterized in that: the number of the piezoresistors (8) is smaller than that of the second comb teeth (9), and the piezoresistors (8) are all located on the second comb teeth (9).
8. The method for manufacturing the piezoresistance type angle feedback sensor MOEMS micro-mirror according to the claim 3 or 4, characterized in that: and in the (III) bonding wafer manufacturing process, the group of second comb teeth (9) and the group of first comb teeth (7) are distributed in a staggered mode.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114894229A (en) * | 2022-04-26 | 2022-08-12 | 武汉敏声新技术有限公司 | Film bulk acoustic wave sensor and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114894229A (en) * | 2022-04-26 | 2022-08-12 | 武汉敏声新技术有限公司 | Film bulk acoustic wave sensor and preparation method thereof |
| CN114894229B (en) * | 2022-04-26 | 2024-05-03 | 武汉敏声新技术有限公司 | Film bulk acoustic wave sensor and preparation method thereof |
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