CN114123976B - Distributed active cold and hot noise source with super-large relative bandwidth - Google Patents
Distributed active cold and hot noise source with super-large relative bandwidth Download PDFInfo
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Abstract
The invention discloses a distributed active cold and hot noise source with super large relative bandwidth, which comprises: a distributed noise network, a distributed upper switch, a distributed lower switch and a power synthesis structure; the distributed noise network includes: the N-level low-noise amplification network is used for carrying out multi-level amplification on the noise signals; the distributed upper switch comprises: n switches connected in parallel and a transmission line connected in common for switching a thermal noise signal generated by a noise source; the distributed lower switch comprises: the N switches connected in parallel and the transmission line connected in common are used for switching cold noise signals generated by the noise source; the power combining structure is used to connect a source of hot noise to a source of cold noise. The invention obviously improves the working bandwidth of a cold and hot noise source by utilizing a distributed structure, realizes cold noise and hot noise simultaneously by multiplexing the distributed noise network structure, and improves the compactness of a circuit.
Description
Technical Field
The invention belongs to the technical field of noise sources, and particularly relates to a distributed active cold and hot noise source with an ultra-large relative bandwidth.
Background
A noise source is a device capable of outputting stable noise power in a specific frequency band, and is indispensable in many applications such as radiometer antenna system and receiver calibration, amplifier parameter measurement, and noise detection. In some radiometer systems and noise measurement systems, it is desirable to have two "hot" and "cold" noise sources with different noise temperatures, and the broadband requirements of the noise sources are increasing with the actual application.
Fig. 1 is a simplified schematic diagram of a conventional noise source load, in the dotted box a typical circuit topology of the noise source. The source of active thermal noise is achieved by either tying the base of the transistor back and matching at the collector, or by using shot noise in a reverse biased zener diode, while the source of active cold noise is typically achieved by connecting the collector of the transistor to a passive load and matching at the base. The thermal noise signal and the cold noise signal generated by the noise source can be switched by the single-pole double-throw switch and then output to the radiometer system. Single pole double throw switches are typically implemented using a lambda/4 transmission line, with the two parallel switches being narrow-band in nature. Thus, the total noise source load is limited to a limited bandwidth.
However, the effective bandwidth of a radiometer with calibration functionality is limited by both the receive channel bandwidth and the noise source bandwidth. In fact, the bandwidth of the noise source can directly affect the sensitivity of the radiometer system, and the equivalent noise temperature difference can be expressed as:
wherein, T s Is the noise temperature of the radiometer system, B RF And τ is the radio frequency bandwidth and integration time, respectively, (Δ G/G) is the gain uncertainty. In addition to the power balance between the antenna port and the noise source, the bandwidth of the noise source also directly determines the cancellation effect of (Δ G/G) in equation (1). Therefore, a noise source with sufficient bandwidth to cover the radiometer operating frequency is required.
In 2010, E.de la Jarrige et al realized a cold noise source load with a 65K noise temperature using SiGe heterojunction bipolar transistors, titled: "SiGe HBT-based active code load for radiometer calibration", but it exhibits a relatively narrow operating frequency range. In 2014, s.diebold et al realized that GaAs based noise loads could be switched between cold and hot noise, titled: "A W-band monolithic integrated active hot and cold noise source", but only achieves the best performance around the 94GHz center frequency.
In summary, the current noise source has the problems of narrow working bandwidth, low compactness and low integration of the cold and hot noise sources, and the like, and still has great improvement space.
Disclosure of Invention
Aiming at the defects and improvement requirements of the prior art, the invention provides a distributed active cold and hot noise source with an ultra-large relative bandwidth, and aims to improve the working bandwidth of the noise source and realize the switching between the hot noise and the cold noise; the compactness and the integration degree of a cold and hot noise source are improved.
The invention provides a distributed active cold and hot noise source with super large relative bandwidth, comprising: a distributed noise network, a distributed upper switch, a distributed lower switch and a power synthesis structure; the distributed noise network comprises: the noise reduction circuit comprises N-level low-noise amplification networks, a first-level low-noise amplification unit, \8230, a second-level low-noise amplification unit, \8230, an ith-level low-noise amplification unit, \8230, an Nth-level low-noise amplification unit and a second-level low-noise amplification unit, wherein the N-level low-noise amplification networks are sequentially marked as the first-level low-noise amplification unit, \8230, the ith-level low-noise amplification unit, the 8230and the Nth-level low-noise amplification unit and are used for carrying out multi-level amplification on noise signals; the distributed upper switch comprises: n switches connected in parallel for switching thermal noise signals generated by the noise source; the distributed lower switch comprises: n switches connected in parallel for switching cold noise signals generated by the noise source; the power synthesis structure is used for connecting a heat noise source and a cold noise source; wherein N represents the number of the single-stage low-noise amplification units, i represents the serial number of the single-stage low-noise amplification units, N is an integer greater than or equal to 2, and i is greater than or equal to 1 and less than or equal to N.
Along with the increase of the N levels of the N-level low-noise amplification network, the matching degree of low frequency and high frequency of the distributed noise network is improved, so that the bandwidth is expanded, and the noise temperature is reduced; however, increasing the number of stages N introduces more transmission loss to degrade the noise performance, resulting in a decreasing trend of the noise temperature. Thus, the number of stages N is chosen according to the desired noise temperature tradeoff.
Furthermore, the first-stage low-noise amplification units, \8230;, the ith-stage low-noise amplification units, \8230;, and the nth-stage low-noise amplification units have the same structure and include transistors.
Wherein the transistor is a bipolar transistor or a field effect transistor.
Furthermore, in the N-stage low noise amplification network, the ith and (i + 1) th stage transistors are connected in a common emitter manner; the base electrode of each transistor passes through a DC blocking capacitor C 5 Connected to the base transmission line TL 1 The device is used for reducing the total capacitance value of the base electrode and improving the working bandwidth; the emitter of each transistor being passed through a transmission line TL 7 The grounding is used for ensuring the stability of the circuit; the collector of each transistor passes through a transmission line TL 8 Is connected to the transmission line TL 2 For reducing the parasitic effects and increasing the operating bandwidth.
WhereinThe distributed upper switch further comprises: transmission line TL 3 The collectors of N of the distributed upper switches are all connected to the transmission line TL 3 (ii) a The distributed down switch further comprises: transmission line TL 1 The collectors of N switches of the distributed lower switches are all connected to the transmission line TL 1 。
Therein, a transmission line TL 1 One end of the second capacitor is connected with the power synthesis structure, and the other end of the second capacitor passes through the blocking capacitor C 4 And an absorption resistance R B Grounding; the transmission line TL 3 One end of the power divider is connected with the power combining structure, and the other end of the power divider passes through a resistor R L And is grounded.
Wherein N parallel switches in the distributed upper switch are controlled by an external first voltage V ctrl1 Controlling N parallel switches of the distributed lower switches by an external second voltage V ctrl2 Control and the first voltage V ctrl1 And the second voltage V ctrl2 The reverse is true.
Further, the power combining structure includes: matching network, transmission line TL 4 And transmission line TL 5 Transmission line TL 4 Is connected to the transmission line TL 3 An end of the transmission line TL 5 Is connected to the transmission line TL at one end 1 An end of the transmission line TL 4 Is connected to the transmission line TL at the other end 5 One end of the matching network is connected to the transmission line TL 4 And transmission line TL 5 And the other end of the matching network is used as an output end.
Further, the matching network comprises: transmission line TL 6 An inductor L 1 And a capacitor C 1 (ii) a Capacitor C 1 As one terminal of the matching network, the capacitor C 1 Is connected to the transmission line TL at the other end 6 The transmission line TL 6 The other end of the matching network is used as the other end of the matching network; the inductance L 1 Is connected to the transmission line TL 6 And a capacitor C 1 The connection terminal of, the inductance L 1 And the other end of the same is grounded.
Further, the power combining structure is connected with the distributed upper switch postDistributed noise network transmission line with transmission line multiplexed with distributed lower switches by using opposite external voltages V ctrl1 And V ctrl2 The distributed upper switch and the distributed lower switch can be periodically opened and closed, so that the output cold noise temperature and the thermal noise temperature are respectively realized, and the switchable broadband cold and hot noise source is realized.
Compared with the prior art, the technical scheme of the invention can realize switchable output between the hot noise temperature and the cold noise temperature and has super-large relative bandwidth due to the adoption of the multiplexing distributed noise network structure. Meanwhile, the distributed noise network structure is multiplexed, and the distributed lower switch and the distributed noise network transmission line are multiplexed, so that the design of the radiometer is high in compactness degree and low in cost, the working bandwidth is greatly widened, the internal integration is facilitated, the radiometer can be further migrated to a high-performance integrated circuit technology, and reference is provided for radiometer design of practical application such as geological remote sensing, meteorological observation and the like.
Drawings
FIG. 1 is a simplified schematic diagram of a conventional noise source load;
FIG. 2 is a schematic diagram of an architecture of a distributed active thermal noise source with an ultra-large relative bandwidth provided by the present invention;
FIG. 3 is a schematic diagram of a topology structure of a distributed active thermal noise source according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of the working principle of the distributed active cold noise source provided by the embodiment of the invention;
FIG. 5 is a simplified noise model diagram of a distributed active cold noise source provided by an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of an operating principle of a distributed active thermal noise source provided by an embodiment of the present invention;
FIG. 7 is a simplified noise model diagram of a distributed active thermal noise source provided by an embodiment of the present invention;
FIG. 8 is a graphical representation of an example thermal noise temperature test result according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides a distributed active cold and hot noise source with an ultra-large relative bandwidth, and the working bandwidth of the noise source is expanded through a distributed structure. Meanwhile, by utilizing a multiplexed distributed noise network, a hot noise source and a cold noise source are realized at the same time, and the compactness and the integration level of the whole circuit are improved. The distributed noise network and the distributed switch are beneficial to greatly improve the working bandwidth of the active cold and hot noise source, and meanwhile, the noise power mode can be switched between a cold noise power mode and a hot noise power mode. In addition, the noise network structure is multiplexed, so that the compactness of an active cold and hot noise source is effectively improved, and the complexity of design is reduced.
FIG. 2 is a distributed active cold and hot noise source with very large relative bandwidth, comprising: a distributed noise network, a distributed upper switch, a distributed lower switch and a power synthesis structure;
the distributed noise network includes: the N-level low-noise amplifier comprises N transistors, wherein the N-level low-noise amplifier is sequentially marked as a first-level low-noise amplification unit, \8230, an ith-level low-noise amplification unit, \8230, an \8230, and an Nth-level low-noise amplification unit and is used for amplifying noise signals; and the ith stage and the (i + 1) th stage of the N-stage low-noise amplification network are connected by a common emitter.
Wherein N represents the number of the single-stage low-noise amplification units, i represents the serial number of the single-stage low-noise amplification units, N is an integer greater than or equal to 2, and i is greater than or equal to 1 and less than or equal to N.
Wherein, the equivalent noise temperature of the input port of the distributed noise network can be expressed as:
wherein T is a And T b Is two uncorrelated noise waves A n And B n Equivalent noise temperature of G 21,ti And G 12,ti Is the terminal constant gain, T, of the circuit 1 And T 2 Temperature of input port load and terminal load, gamma, respectively 1 And Γ 2 Respectively, the reflection coefficients of the port and the load.
Along with the increase of the number of stages N, the low-frequency matching degree and the high-frequency matching degree of the distributed noise network are improved, so that the bandwidth is expanded, and the noise temperature is reduced; however, increasing the number of stages N introduces more transmission loss to degrade the noise performance, resulting in a decreasing trend of the noise temperature. Thus, depending on the desired noise temperature, the appropriate number of stages N is traded off. As an embodiment of the present invention, the value of the number N is 4.
The distributed upper switch consists of N switches connected in parallel and a transmission line connected in common, is used for switching a thermal noise signal generated by a noise source and is controlled by an external first voltage V ctrl1 Controlling opening and closing; the distributed lower switch consists of N switches connected in parallel and a transmission line connected together, is used for switching a cold noise signal generated by a noise source, and is controlled by an external second voltage V ctrl2 Controlling opening and closing.
The power synthesis structure is connected with the cold noise source and the heat noise source and outputs cold noise or heat noise through switch switching.
In order to better illustrate the performance advantage of the distributed active cold and hot noise source with an ultra-large relative bandwidth, which is provided by the present invention, taking a distributed active cold and hot noise source covering an L-band and a C-band and having a relative bandwidth exceeding 156% as an example, a circuit architecture is shown in fig. 3, and is mainly analyzed and illustrated from the implementation manners of cold noise and hot noise and the achievable equivalent noise temperature, respectively.
In the design of the distributed noise network, a distributed noise network of N =4 is selected in consideration of coverage bandwidth, noise performance, and design compactness. Wherein the low noise amplification unit mainly comprises Heterojunction Bipolar Transistor (HBT) with Q 1 、Q 2 、Q 3 、Q 4 Indicating that the base electrodes are connected with a DC blocking capacitor C 5 Transmission line to base TL 1 The same asThe total capacitance value of the base electrode is reduced, and the working bandwidth is improved; emitter connecting transmission line TL 7 To ground, ensure the stability of the circuit; collector connecting transmission line TL 8 Transmission line to collector TL 2 The influence of parasitic effect is reduced, and the working bandwidth is improved.
Wherein the base transmission line TL is designed for a desired bandwidth range 1 And a collector transmission line TL 2 The equivalent electrical length is designed to be 55 degrees, and similarly to the design of the distributed amplifier, when the phase speeds of the base transmission line and the collector transmission line are the same, the output currents of the amplifying units at all levels are superposed in phase at the output node. The phase velocities of the transmission lines of the base and collector are therefore designed to be the same in order to add the signals in the forward direction when they reach the output.
Transmission line TL 1 The tail end is a blocking capacitor C 4 And a resistor R B Cascade to ground, with a resistance R B The 45 omega is chosen to ensure both broadband matching of the base transmission line and low noise temperature. At the same time, transmission line TL 2 One end of the capacitor is a DC blocking capacitor C 2 And a resistor R C Is cascaded to ground, wherein a resistor R c The reverse voltage wave is absorbed by selecting 50 omega; the other end is connected with a blocking capacitor C 3 And a 50 Ω terminal load resistance R L 。
In the embodiment of the invention, in order to provide a broadband low-loss signal path with the coverage bandwidth of 1 GHz-8 GHz, the distributed lower switch is composed of 4 parallel same transistors Q 5 、Q 6 、Q 7 、Q 8 Base transmission line TL with distributed noise network 1 Construction, since the switching transistor is directly connected to the base transmission line, the selection of the switching transistor requires a trade-off between switching losses and conduction losses, since switches of large size are preferred in order to minimize switching losses; however, to compensate for the larger switched capacitance requires the use of narrower traces, which in turn increases conduction losses. The distributed upper switch consists of 4 parallel identical transistors Q 9 、Q 10 、Q 11 、Q 12 And transmission line TL 3 And (4) forming.
Wherein the power combining structure is composed of transmission lines TL 4 、TL 5 The power transmission device is formed by the matching network and ensures the maximum transmission of power; transmission line TL in matching network 6 And a capacitor C 1 Cascade, inductor L 1 The two are connected to the ground in parallel, and the whole structure is a T-shaped structure.
The circuit architecture diagram of the distributed active cold and hot noise source provided by the invention when working in a cold source (ACL) is shown in fig. 4. The dotted line frame shows the distributed lower switch, the transmission line of the distributed lower switch multiplexes the base transmission line of the distributed noise network, the switching transistor and the transistor in the distributed noise network are alternately distributed, and the external second voltage V is applied ctrl2 Controlling the opening and closing.
Wherein in the ACL mode of operation, the distributed upper switch is closed, exhibiting a substantial degree of isolation and therefore being represented by a pair of blocked ports.
A simplified noise model of the ACL in fig. 4 is shown in fig. 5. The impedances of two blocked ports close to the input port and the terminating load are respectively Z in，TDS And Z out，TDS ；Z in And Z out Representing the input and output impedances of the ACL excluding the distributed upper switch ports, equivalent to the input and output impedances of a structure consisting of only the distributed noise network and the distributed lower switches; the input port and the terminating load have respective noise temperatures T 1 And T L (ii) a L for loss introduced by distributed lower switch 1 And (4) showing. The equivalent noise temperature of the input port can be expressed as:
Wherein the noise contribution of the second term in equation (5) becomes negligible due to the large isolation provided by the structure of the distributed noise network and the open distributed down switches from the terminal load to the input port, so the equivalent noise temperature T of the ACL input port e,ACL Mainly composed of T b,ACL And (4) leading.
Fig. 6 shows a circuit architecture diagram of a distributed active thermal noise source according to the present invention when the distributed active thermal noise source operates in a heat source (AHL). Thermal noise is mainly achieved by the proposed distributed noise network delivering an amplified noise signal. The distributed lower switch is closed and the distributed upper switch is closed by V ctrl1 The opening is controlled to transmit a noise signal through the upper branch. The long dashed rectangle in fig. 6 represents the distributed noise network and the closed distributed down switch.
A simplified noise model of the AHL in fig. 6 is shown in fig. 7. Equivalent noise temperature T of input port of AHL circuit e,AHL Can be expressed as:
Further, the thermal noise temperature T e、AHL With reverse noise wave T b,AHL Mainly, but three sum terms in parentheses of formula (6) respectively represent reflection forward transmission noise, noise generated by load terminal, and combination of distributed noise network and closed distributed lower switchAmbient noise temperature of constituent amplification, pair T e、AHL Cannot be neglected, especially at low frequencies.
The distributed active cold and heat noise source circuit structure covering the L-band and the C-band and having a relative bandwidth of more than 156% is shown in fig. 3, and a switchable broadband cold and heat noise source is realized. By using opposite external control voltages V ctrl1 And V ctrl2 The distributed upper and lower switches may be periodically opened and closed to achieve output cold noise temperature and thermal noise temperature, respectively.
FIG. 8 illustrates the test results of the above-described distributed active thermal noise source with very large relative bandwidth of the present invention. The measured cold noise temperature was about 225K and the average of the thermal noise temperature over the full passband was about 650K. It is generally considered that "cold" is the case when the noise temperature is lower than the ambient temperature, since the receiving channel is only designed to accommodate signals up to 8GHz, and the performance of the cold noise source is only verified by radiometers in the range of 1 to 8GHz, the relative bandwidth is 156%, and in fact, the relative bandwidth of the distributed cold noise source is greater than the above value. The thermal noise temperature can be further increased by cascading more amplification units.
Compared with the traditional active noise load, the distributed active cold and hot noise source structure with the ultra-large relative bandwidth provided by the invention can realize switchable output between the hot noise temperature and the cold noise temperature based on the multiplexing distributed noise network structure, and has the ultra-large relative bandwidth. The active cold and hot noise source structure provided by the invention has the advantages of high design compactness, low cost, large working bandwidth, and contribution to internal integration, and can further improve the sensitivity of the radiometer by eliminating the limitation of calibration bandwidth. Meanwhile, the structure can be further transferred to a high-performance integrated circuit technology, and reference is provided for radiometer design of practical application such as geological remote sensing and meteorological observation.
It will be understood by those skilled in the art that the foregoing is only an exemplary embodiment of the present invention, and is not intended to limit the invention to the particular forms disclosed, since various modifications, substitutions and improvements within the spirit and scope of the invention are possible and within the scope of the appended claims.
Claims (9)
1. A distributed active thermal noise source having an ultra-large relative bandwidth, comprising: a distributed noise network, a distributed upper switch, a distributed lower switch and a power synthesis structure;
the distributed noise network comprises: the input end of the N-stage low-noise amplification network is connected with a heat noise source and a cold noise source; the amplifier is sequentially marked as a first-level low-noise amplification unit, \8230 \ 8230 \ i-th-level low-noise amplification unit, \8230 \ N-th-level low-noise amplification unit and used for carrying out multi-level amplification on noise signals;
the distributed upper switch comprises: the input ends of the N switches which are connected in parallel are connected to the output end of the distributed noise network and are used for switching thermal noise signals generated by the noise source;
the distributed lower switch comprises: the input ends of the N switches which are connected in parallel are connected to the output end of the distributed noise network and are used for switching cold noise signals generated by the noise source;
the power combining structure connects the transmission line on which the distributed upper switch is located with the distributed noise network transmission line on which the distributed lower switch is multiplexed by using opposite external voltages V ctrl1 And V ctrl2 The distributed upper switch and the distributed lower switch are periodically opened and closed, so that a cold noise signal and a thermal noise signal are respectively output, and a switchable broadband cold and hot noise source is realized;
wherein N represents the number of the single-stage low-noise amplification units, i represents the serial number of the single-stage low-noise amplification units, N is an integer greater than or equal to 2, and i is greater than or equal to 1 and less than or equal to N.
2. The distributed active cold and hot noise source of claim 1, wherein the first-stage low noise amplification units, \8230;, the ith-stage low noise amplification units, \8230;, and the nth-stage low noise amplification units have the same structure and comprise transistors.
3. A distributed active thermal noise source as defined in claim 2 wherein said transistors are bipolar transistors or field effect transistors.
4. A distributed active thermal noise source as defined in claim 2, wherein in said N-stage low noise amplification network, the i-th and i + 1-th stage transistors are connected by a common emitter; the base electrode of each transistor passes through a DC blocking capacitor C 5 Connected to the base transmission line TL 1 The device is used for reducing the total capacitance value of the base electrode and improving the working bandwidth; the emitter of each transistor is connected via a transmission line TL 7 The grounding is used for ensuring the stability of the circuit; the collector of each transistor is connected via a transmission line TL 8 Is connected to transmission line TL 2 For reducing the parasitic effects and increasing the operating bandwidth.
5. A distributed active thermal noise source as defined in claim 1 wherein said distributed upper switch further comprises: transmission line TL 3 The collectors of N of the distributed upper switches are all connected to the transmission line TL 3 ；
The distributed down switch further comprises: transmission line TL 1 The collectors of N of the distributed lower switches are all connected to the transmission line TL 1 。
6. A distributed active thermal noise source as claimed in claim 5, wherein said transmission line TL is 1 One end of the second capacitor is connected with the power synthesis structure, and the other end of the second capacitor passes through the blocking capacitor C 4 And an absorption resistance R B Grounding; the transmission line TL 3 One end of the power combining structure is connected with the power combining structure, and the other end of the power combining structure is connected with the power combining structure through a resistor R L And is grounded.
7. A distributed active thermal noise source as claimed in any of claims 1-6, wherein N parallel switches of said distributed upper switch are driven by an external first voltage V ctrl1 Controlling N parallel switches of the distributed lower switches by an external second voltage V ctrl2 Control, and the first voltageV ctrl1 And the second voltage V ctrl2 The reverse is true.
8. A distributed active cold and hot noise source as claimed in any of claims 1-6, wherein said power combining structure comprises: matching network, transmission line TL 4 And transmission line TL 5 Transmission line TL 4 Is connected to the transmission line TL at one end 3 An end of (1), a transmission line TL 5 Is connected to the transmission line TL 1 An end of (1), a transmission line TL 4 Is connected to the transmission line TL at the other end 5 And one end of the matching network is connected to the transmission line TL 4 And transmission line TL 5 And the other end of the matching network is used as an output end.
9. A distributed active thermal noise source as defined in claim 8 wherein said matching network comprises: transmission line TL 6 An inductor L 1 And a capacitor C 1 ；
The capacitor C 1 As one terminal of the matching network, the capacitor C 1 Is connected to the transmission line TL 6 The transmission line TL 6 The other end of the matching network is used as the other end of the matching network; the inductance L 1 Is connected to the transmission line TL 6 And a capacitor C 1 The connection terminal of, the inductance L 1 And the other end of the same is grounded.
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| CN1770620A (en) * | 2004-11-04 | 2006-05-10 | 国际商业机器公司 | Wideband gaussian white noise source |
| CN104852691A (en) * | 2015-05-18 | 2015-08-19 | 中国科学院国家天文台 | L-band single-way bias low-noise cryogenic amplifier |
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| WO1998027414A2 (en) * | 1996-12-03 | 1998-06-25 | Raytheon E-Systems, Inc. | Variable microwave cold/warm noise source |
| US11953535B2 (en) * | 2018-07-18 | 2024-04-09 | Teknologian Tutkimuskeskus Vtt Oy | Active noise source design |
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| CN1770620A (en) * | 2004-11-04 | 2006-05-10 | 国际商业机器公司 | Wideband gaussian white noise source |
| CN104852691A (en) * | 2015-05-18 | 2015-08-19 | 中国科学院国家天文台 | L-band single-way bias low-noise cryogenic amplifier |
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| A W -Band Monolithic Integrated Active Hot and Cold Noise Source;Sebastian Diebold;《IEEE Transactions on Microwave Theory and Techniques》;20140121;第 623 – 630页 * |
| An Active Cold and Hot Noise Generator;Liang Weijun;《2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT)》;20200213;第1-3页 * |
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