CN114122258A - Celestite blue film composite material and preparation method thereof - Google Patents
Celestite blue film composite material and preparation method thereof Download PDFInfo
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- CN114122258A CN114122258A CN202111355127.1A CN202111355127A CN114122258A CN 114122258 A CN114122258 A CN 114122258A CN 202111355127 A CN202111355127 A CN 202111355127A CN 114122258 A CN114122258 A CN 114122258A
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- 229910052923 celestite Inorganic materials 0.000 title claims abstract description 48
- UBXAKNTVXQMEAG-UHFFFAOYSA-L strontium sulfate Chemical compound [Sr+2].[O-]S([O-])(=O)=O UBXAKNTVXQMEAG-UHFFFAOYSA-L 0.000 title claims abstract description 47
- 239000002131 composite material Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000002243 precursor Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 238000003860 storage Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 50
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 30
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 20
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 20
- 238000001704 evaporation Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000835 fiber Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002121 nanofiber Substances 0.000 abstract description 33
- 239000000463 material Substances 0.000 abstract description 15
- 230000015654 memory Effects 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 3
- 239000012046 mixed solvent Substances 0.000 abstract description 2
- 125000000524 functional group Chemical group 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000001291 vacuum drying Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 238000001338 self-assembly Methods 0.000 description 6
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- GWBUNZLLLLDXMD-UHFFFAOYSA-H tricopper;dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Cu+2].[Cu+2].[Cu+2].[O-]C([O-])=O.[O-]C([O-])=O GWBUNZLLLLDXMD-UHFFFAOYSA-H 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- -1 chlorine anions Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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Abstract
The invention belongs to the field of composite materials, and particularly relates to a celestite blue film composite material and a preparation method thereof, wherein the preparation method comprises the following steps: dissolving celestite blue in a mixed solvent to obtain a precursor solution for preparing the film; injecting the solution into an electrolytic cell, applying direct current voltage, and depositing the celestite blue material on the interface of the conductive electrode to obtain a layer of uniform nano fibrous self-assembled film; and after vacuum drying, plating a layer of metal Al electrode on the surface of the functional material film to serve as a top electrode, and using the deposited conductive electrode as a bottom electrode to prepare the celestite blue film composite material. The invention effectively realizes the preparation of the organic nanofiber self-assembled film by utilizing the functional groups of the material and the external electric field acting force, effectively improves the electrical characteristics of the material, induces the storage effect based on electric signal response, and has reliable application prospect in the field of electric memories.
Description
Technical Field
The invention belongs to the field of composite materials, and particularly relates to a celestite blue film composite material and a preparation method thereof.
Background
The twenty-first century is the era of science and technology, social development is changing day by day, and people are more and more oriented to convenient life brought by intellectualization. However, the back of intelligent development is derived from the powerful support of hardware devices on the one hand and the rapid development of "big data" and its storage technology on the other hand. The daily data processing amount of the current society is increased in the number of geometric series, and the requirement of the society on a memory is higher and higher. Therefore, the safe, efficient and large-capacity storage of data becomes the leading soldier in the 'big data' era. Organic electric information storage materials and nanometer devices with binary or even multilevel information storage functions become hot spots for research of scientists. The organic nano-fiber is widely researched in the field of constructing organic nano-devices, and the advantages of the organic nano-fiber are mainly shown in the following aspects: 1. compared with a body structure, the nanofiber has more excellent mechanical properties and has greater development potential in the field of flexible organic electronic devices; 2. the nanofiber can form a stable electron transmission channel along the long axis and the diameter direction, so that the nanofiber has excellent electrical properties.
To date, researchers have explored diverse physicochemical strategies to synthesize nanofibers of conjugated materials, including spontaneous thermodynamic and kinetic methods (e.g., thermal evaporation, solvothermal, sol-gel, chemical vapor deposition, etc.) as well as external force-assisted methods (e.g., template-assisted, magnetic field-assisted). However, the above methods all have certain limitations, for example, the thermal evaporation method has high energy consumption and low controllability; the process flow of the external acting force auxiliary method is complicated; conventional film-forming methods (such as spin coating and vacuum evaporation) produce non-equilibrium morphology due to solvent evaporation or rapid quenching due to thermal effects of the film, which is not conducive to obtaining uniform self-assembled segments of nanofibers on the substrate. Furthermore, the above problems all pose great challenges for preparing large-area and homogeneous organic nanofiber thin films. Therefore, the size-controllable nanofiber film is synthesized in an organic solvent by utilizing an electric induction deposition process, and an oriented self-assembly stacking mode is formed on the substrate interface under the action of external electric field force, so that the method has important significance for improving the performance of the electric storage information device.
Disclosure of Invention
The invention aims to provide a celestite blue film composite material, and the preparation method of the celestite blue film composite material not only effectively enhances the compactness of the accumulation between organic functional material molecules and the ductility of a film, but also can ensure the realization of the transfer process of charges in molecules, induce the resistance state change based on electric signal response, and realize the storage and the erasure of information. Meanwhile, the application of the celestite blue film composite material in the field of information storage is provided.
The invention provides a preparation method of a celestite blue film composite material, which comprises the following steps:
(1) dissolving celestite blue in dimethyl sulfoxide, adding acetonitrile to obtain precursor solution,
(2) depositing the precursor solution on a conductive substrate to form a fiber film layer;
(3) and sequentially evaporating a fluoride layer and a top electrode layer on the surface of the fiber film layer to obtain the celestite blue film composite material.
Preferably, in the step (1), the temperature for mixing the dimethyl sulfoxide and the acetonitrile is 20-30 ℃ and the time is 8-16 h.
Preferably, in the step (1), the volume ratio of dimethyl sulfoxide to acetonitrile is 1: 8-10.
Preferably, in the step (1), the concentration of celestite blue in the precursor solution is 0.1-0.3 mg/mL.
Preferably, the conductive substrate is an Indium Tin Oxide (ITO) layer substrate or a zinc oxide (FTO) layer substrate; the fluoride layer is a lithium fluoride layer or a magnesium fluoride layer; the top electrode layer is a metal Au layer, an Ag layer or an Al layer.
Preferably, the specific operation of step (2) is as follows: and placing the precursor solution in an electrolytic cell, and taking a conductive substrate as a cathode, wherein the conductive substrate is preferably used as an anode.
And (3) building a closed electric field induced deposition workstation, placing electrodes of the workstation at the left end and the right end of the electrolytic cell, applying voltage, and depositing on the surface of the cathode to form a fiber film layer.
Further, the deposition condition is 5-15V DC voltage, and the distance between the cathode and the anode is 8-12 mm. The capacity of the electrolytic cell is 2-4cm3The time is 4-6 min.
Further, in the step (3), the evaporation rate of the fluoride layer is
The thickness is 8-12 nm.
Further, in the step (3), the top electrode layer is evaporated on the lithium fluoride layer in vacuum through a mask plate of the circular hole array at the evaporation speed of
The thickness is 80-120nm, and the vacuum degree is 1 × 10-6-1×10-4Torr。
The invention also provides the celestite blue film composite material prepared by the preparation method.
The invention also provides an application of the celestite blue film composite material as an electric storage device.
Compared with the prior art, the technical scheme of the invention has the following advantages:
1. in the invention, dimethyl sulfoxide in the mixed solvent is used as a benign solvent of celestite blue, acetonitrile is used as a poor solvent of celestite blue, and celestite blue molecules consist of a cation conjugated framework, chlorine anions, hydroxyl and an amide group, so that the non-covalent bond effect between adjacent molecules, including hydrogen bonds, coulomb force and van der waals force, can be enhanced; secondly, the conjugated skeleton close to the plane can promote the pi-pi interaction in the material and induce the orientation of molecular accumulation; intramolecular charge transfer induces a memory effect based on the response of an electrical signal.
2. The film prepared by electric induction has excellent uniformity, continuity, large-area stability and flexibility, and the inside of the film has compact molecular accumulation, thereby effectively avoiding the problems caused by crack formation of crystal grains, overlarge gaps and irregular crystallization. The prepared electric memory array with controllable uniformity is beneficial to improving the electrical stability and performance reproducibility of the storage active layer, and provides important guarantee for the production and application of large-area organic thin films and flexible electronic devices.
Drawings
FIG. 1 is a schematic view of an electric field induced deposition workstation for the preparation of celestite blue nanofiber films;
FIG. 2 is an Atomic Force Microscope (AFM) image of a celestite blue nanofiber film;
FIG. 3 is a cross-sectional view of an atomic force microscope of a celestite blue nanofiber film;
FIG. 4 is a graph of the UV absorption spectrum of a celestite blue nanofiber film;
FIG. 5 is a schematic structural view of an electric memory of a celestite blue nanofiber film;
FIG. 6 is a graph of the electrical performance of an electrical memory of the "bottom electrode/celestite blue/top electrode" configuration;
FIG. 7 is a graph of electrical performance characteristic parameters of an electrical memory of the "bottom electrode/celestite blue/top electrode" configuration.
Description of reference numerals: 1-top electrode layer, 2-fluoride layer, 3-celestite blue film, 4-conductive substrate, 5-glass.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Example 1
Dissolving 2mg of azurite blue molecules in 1mL of dimethyl sulfoxide and 9mL of acetonitrile which are mixed, stirring for 12 hours, and fully dissolving to finally obtain a mixed solution which is used as a precursor for preparing the nanofiber membrane;
placing the prepared precursor solution in a pre-designed 3cm3In an electrolytic cell. Constructing a closed electric field induced deposition workstation, placing electrodes of the workstation at the left end and the right end of an electrolytic cell with the electrode spacing of 1mm, applying a voltage of 10V, and continuously depositing5 min; the celestite blue material is subjected to self-assembly in an electrolytic cell and is slowly deposited on the conductive indium tin oxide layer substrate 4 to obtain a uniform and compact organic nano fiber film layer; and then, taking the deposited film out of the electrolytic cell by using a pulling instrument, and flatly placing the film in a vacuum oven at 100 ℃ for drying to obtain the celestite blue film 3.
At 10-6Evaporating a lithium fluoride layer 2 on the surface of the nanofiber thin film layer under the condition of Torr vacuum degree at the evaporation speed of
The thickness was 10 nm. Then continuing to carry out vacuum evaporation on the metal Al electrode to the surface of the lithium fluoride layer through a mask plate with a circular hole array with uniform size at the evaporation speed
The thickness is 100nm, a top electrode layer 1 is obtained, and the top electrode layer is placed on glass 5, so that the celestite blue film composite material is obtained.
Example 2
Dissolving 4mg of azurite blue molecules in mixed 1.8mL of dimethyl sulfoxide and 18.2mL of acetonitrile, stirring for 8 hours, and fully dissolving to finally obtain a mixed solution serving as a precursor for preparing the nanofiber membrane;
placing the prepared precursor solution in a pre-designed 2cm3In an electrolytic cell. Building a closed electric field induced deposition workstation, placing electrodes of the workstation at the left end and the right end of an electrolytic cell, wherein the electrode distance is 8mm, then applying a voltage of 5V, and continuously depositing for 6 min; the celestite blue material is subjected to self-assembly in an electrolytic cell and is slowly deposited on a conductive indium tin oxide layer substrate to obtain a uniform and compact organic nanofiber thin film layer; and then, taking the deposited film out of the electrolytic cell by using a pulling instrument, and flatly placing the film in a vacuum oven at 100 ℃ for drying to obtain the celestite blue film.
At 10-4Evaporating a lithium fluoride layer on the surface of the nanofiber thin film layer under the condition of Torr vacuum degree at the evaporation speed of
The thickness was 8 nm. Then continuing to carry out vacuum evaporation on the metal Al electrode to the surface of the lithium fluoride layer through a mask plate with a circular hole array with uniform size at the evaporation speed
The thickness is 80nm, and the celestite blue film composite material is obtained.
Example 3
Dissolving 6mg of azurite blue molecules in 3.3mL of dimethyl sulfoxide and 26.7mL of acetonitrile which are mixed, stirring for 16 hours, and fully dissolving to finally obtain a mixed solution as a precursor for preparing the nanofiber membrane;
placing the prepared precursor solution in a pre-designed 4cm3In an electrolytic cell. Building a closed electric field induced deposition workstation, placing electrodes of the workstation at the left end and the right end of an electrolytic cell, wherein the electrode distance is 12mm, then applying a voltage of 15V, and continuously depositing for 4 min; the celestite blue material is subjected to self-assembly in an electrolytic cell and is slowly deposited on a conductive indium tin oxide layer substrate to obtain a uniform and compact organic nanofiber thin film layer; and then, taking the deposited film out of the electrolytic cell by using a pulling instrument, and flatly placing the film in a vacuum oven at 100 ℃ for drying to obtain the celestite blue film.
At 10-6Evaporating a lithium fluoride layer on the surface of the nanofiber thin film layer under the condition of Torr vacuum degree at the evaporation speed of
The thickness was 12 nm. Then continuing to carry out vacuum evaporation on the metal Al electrode to the surface of the lithium fluoride layer through a mask plate with a circular hole array with uniform size at the evaporation speed
The thickness is 120nm, and the celestite blue film composite material is obtained.
Example 4
Dissolving 6mg of azurite blue molecules in 3.3mL of dimethyl sulfoxide and 26.7mL of acetonitrile which are mixed, stirring for 16 hours, and fully dissolving to finally obtain a mixed solution as a precursor for preparing the nanofiber membrane;
placing the prepared precursor solution in a pre-designed 4cm3In an electrolytic cell. Building a closed electric field induced deposition workstation, placing electrodes of the workstation at the left end and the right end of an electrolytic cell, wherein the electrode distance is 12mm, then applying a voltage of 15V, and continuously depositing for 4 min; the celestite blue material is subjected to self-assembly in an electrolytic cell and is slowly deposited on a conductive zinc oxide layer substrate to obtain a uniform and compact organic nano fiber film layer; and then, taking the deposited film out of the electrolytic cell by using a pulling instrument, and flatly placing the film in a vacuum oven at 100 ℃ for drying to obtain the celestite blue film.
At 10-6Evaporating a magnesium fluoride layer on the surface of the nanofiber thin film layer under the condition of Torr vacuum degree at the evaporation speed of
The thickness was 12 nm. Then continuing to carry out vacuum evaporation on the metal Ag electrode to the surface of the magnesium fluoride layer through a mask plate with a circular hole array with uniform size at the evaporation speed
The thickness is 120nm, and the celestite blue film composite material is obtained.
The celestite blue molecules can realize self-assembly arrangement under the induction of an electric field and are orderly deposited on an electrode interface, as shown in figure 1. AFM images (fig. 2 and 3) of the azure blue nanofiber thin film show that the azure blue nanofibers were successfully prepared, the thin film showed good uniformity and continuity on a microscopic scale, and the width of a single nanofiber was about 100nm in a cross-sectional view.
In the uv absorption spectrum of the nanofiber film (fig. 4), the broader peak shape and red shift indicate that azure blue has stronger molecular forces and charge transfer effects in the fiber film state.
The performance test of the electric memory material with the structure of 'bottom electrode/fiber film/top electrode' comprises the following specific steps:
the prepared electrical memory material was tested at 25 ℃ and 30% humidity using a 4200-SCS semiconductor test system manufactured by Gishley, USA (Keithley). The current-voltage characteristic curve of the device is tested in a mode of applying 0 to +/-5V direct-current voltage scanning, and 50 groups of device units are tested continuously. And finally, counting the characteristic parameter distribution condition of the device performance under multiple tests so as to further investigate the electrical stability and the performance reproducibility of the electric memory material based on the nanofiber film.
From the voltage-current performance characterization of the memory device with the "bottom electrode/nanofiber thin film/top electrode" structure (fig. 6), it can be seen that the device exhibits similar binary resistance state changes based on two memory states of "0" and "1" under positive electric field scanning, and the current level of the device is changed from "1" to "0" by applying negative voltage, thus exhibiting volatile electrical memory characteristics.
According to the electric property characteristic parameter distribution characterization result (figure 7) of the electric memory material with the structure of the bottom electrode/celestite blue/top electrode, the threshold voltage distribution of the device based on the on state and the off state presents better normal distribution. The distribution range of the opening voltage is mainly concentrated on 1-2V, and the distribution range of the closing voltage is mainly distributed from-3.5V to-4.5V.
In conclusion, the celestite blue thin film composite material prepared by the method has a reliable application prospect in the field of electric memories.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.
Claims (10)
1. The preparation method of the celestite blue film composite material is characterized by comprising the following steps of:
(1) dissolving celestite blue in dimethyl sulfoxide, and adding acetonitrile to obtain a precursor solution;
(2) depositing the precursor solution on a conductive substrate to form a fiber film layer;
(3) and sequentially evaporating a fluoride layer and a top electrode layer on the surface of the fiber film layer to obtain the celestite blue film composite material.
2. The method according to claim 1, wherein in the step (1), the volume ratio of dimethyl sulfoxide to acetonitrile is 1: 8-10.
3. The method of claim 1, wherein in step (1), the concentration of celestite blue in the precursor solution is 0.1-0.3 mg/mL.
4. The production method according to claim 1, wherein the conductive substrate is an indium tin oxide layer substrate or a zinc oxide layer substrate;
the fluoride layer is a lithium fluoride layer or a magnesium fluoride layer;
the top electrode layer is a metal Au layer, an Ag layer or an Al layer.
5. The method according to any one of claims 1 to 4, wherein the step (2) is specifically carried out by: and putting the precursor solution into an electrolytic cell, applying voltage by taking a conductive substrate as a cathode, and depositing on the surface of the cathode to form a fiber film layer.
6. The method of claim 5, wherein the deposition condition is a DC voltage of 5-15V and the distance between the cathode and the anode is 8-12 mm.
7. The method according to claim 1, wherein in the step (3), the evaporation rate of the fluoride layer is set to be
The thickness is 8-12 nm.
8. The method of claim 1, wherein in step (3), the top electrode layer is evaporated onto the lithium fluoride layer at a rate of evaporation
The thickness is 80-120nm, and the vacuum degree is 1 × 10-6-1×10-4Torr。
9. A celestite blue thin film composite material prepared by the preparation method according to any one of claims 1 to 8.
10. Use of the celestite blue thin film composite material of claim 9 as an electrical storage device.
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| CN114905674A (en) * | 2022-06-02 | 2022-08-16 | 西南石油大学 | Method for preparing aramid nano-fiber film through in-situ electrodeposition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114905674A (en) * | 2022-06-02 | 2022-08-16 | 西南石油大学 | Method for preparing aramid nano-fiber film through in-situ electrodeposition |
| CN114905674B (en) * | 2022-06-02 | 2023-09-01 | 西南石油大学 | Method for preparing aramid nanofiber film by in-situ electrodeposition |
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