CN114122225A - Preparation method of Micro LED display panel - Google Patents

Preparation method of Micro LED display panel Download PDF

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Publication number
CN114122225A
CN114122225A CN202111319140.1A CN202111319140A CN114122225A CN 114122225 A CN114122225 A CN 114122225A CN 202111319140 A CN202111319140 A CN 202111319140A CN 114122225 A CN114122225 A CN 114122225A
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China
Prior art keywords
micro led
substrate
led chip
array substrate
display panel
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Pending
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CN202111319140.1A
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Chinese (zh)
Inventor
任学超
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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Priority to CN202111319140.1A priority Critical patent/CN114122225A/en
Publication of CN114122225A publication Critical patent/CN114122225A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)

Abstract

The invention provides a preparation method of a Micro LED display panel, which comprises the following steps: preparing an array substrate, wherein the array substrate comprises sub-pixel regions arranged in an array; preparing a Micro LED chip on a temporary substrate; and aligning the temporary substrate with the array substrate, and transferring the Micro LED chip to the array substrate. According to the invention, the Micro LED chip is prepared on the temporary substrate, and then the temporary substrate and the array substrate are aligned for one time, so that the Micro LED chip is transferred onto the array substrate, thereby reducing the transferring and aligning times of the Micro LED chip, reducing the risk of position deviation of the Micro LED chip, improving the aligning precision of the Micro LED chip, and further improving the display yield of the Micro LED display panel.

Description

Preparation method of Micro LED display panel
Technical Field
The application relates to the field of display, in particular to a preparation method of a Micro LED display panel.
Background
The conventional Micro LED display panel is generally prepared by first using sapphire as an optimal growth substrate to mass-produce Micro LEDs, then transferring Micro LED chips from the sapphire onto a temporary carrier, and finally transferring the Micro LED chips from the temporary carrier onto an array substrate. According to the preparation method of the Micro LED display panel, the Micro LED chip needs to be transferred and aligned twice, so that the position of the Micro LED chip is easy to deviate, the alignment precision of the Micro LED chip is reduced, and the display yield of the Micro LED display panel is reduced.
Therefore, the existing Micro LED display panel has the problem of low alignment precision of the Micro LED chip.
Disclosure of Invention
The invention provides a preparation method of a Micro LED display panel, which aims to improve the alignment precision and the display yield of the conventional Micro LED display panel.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention provides a preparation method of a Micro LED display panel, which comprises the following steps:
preparing an array substrate, wherein the array substrate comprises sub-pixel regions arranged in an array;
preparing a Micro LED chip on a temporary substrate;
and aligning the temporary substrate with the array substrate, and transferring the Micro LED chip to the array substrate.
Optionally, in some embodiments of the present invention, the step of preparing the Micro LED chip on the temporary substrate includes:
preparing a Micro LED chip on a sapphire substrate;
preparing a bonding layer on the temporary substrate;
and adhering the sapphire substrate on the bonding layer.
Optionally, in some embodiments of the present invention, the step of bonding the sapphire substrate on the bonding layer includes:
the sapphire substrate is closely arranged on the temporary substrate, and the Micro LED chips correspond to the sub-pixel areas on the array substrate one to one.
Optionally, in some embodiments of the present invention, the step of aligning the temporary substrate with the array substrate and transferring the Micro LED chips to the array substrate includes:
one side of the Micro LED chip on the temporary substrate faces the array substrate, so that the Micro LED chip and the sub-pixel regions on the array substrate are in one-to-one correspondence;
peeling the sapphire substrate and the Micro LED chip;
and transferring the Micro LED chip to the array substrate.
Optionally, in some embodiments of the present invention, the step of peeling the sapphire substrate and the Micro LED chip includes:
and irradiating the temporary substrate by adopting ultraviolet light to strip the sapphire substrate and the Micro LED chip.
Optionally, in some embodiments of the present invention, the step of transferring the Micro LED chip to the array substrate includes;
and connecting the Micro LED chip with the array substrate.
Optionally, in some embodiments of the present invention, the step of connecting the Micro LED chip to the array substrate includes;
electrically connecting the Micro LED chip with the array substrate through a bonding layer;
and the Micro LED chip is fixed on the array substrate through an adhesive layer.
Optionally, in some embodiments of the present invention, the temporary substrate is a transparent substrate.
Optionally, in some embodiments of the present invention, the adhesive layer is a transparent adhesive layer.
Optionally, in some embodiments of the present invention, the adhesion layer has a thickness in a range of 100 angstroms to 2 microns.
The invention provides a preparation method of a Micro LED display panel, which comprises the following steps: preparing an array substrate, wherein the array substrate comprises sub-pixel regions arranged in an array; preparing a Micro LED chip on a temporary substrate; and aligning the temporary substrate with the array substrate, and transferring the Micro LED chip to the array substrate. According to the invention, the Micro LED chip is prepared on the temporary substrate, and then the temporary substrate and the array substrate are aligned for one time, so that the Micro LED chip is transferred onto the array substrate, thereby reducing the transferring and aligning times of the Micro LED chip, reducing the risk of position deviation of the Micro LED chip, improving the aligning precision of the Micro LED chip, and further improving the display yield of the Micro LED display panel.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
FIG. 1 is a flow chart of a method for manufacturing a Micro LED display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a preparation method of a Micro LED display panel according to an embodiment of the present invention.
Detailed Description
While the embodiments and/or examples of the present invention will be described in detail and fully with reference to the specific embodiments thereof, it should be understood that the embodiments and/or examples described below are only a part of the embodiments and/or examples of the present invention and are not intended to limit the scope of the invention. All other embodiments and/or examples, which can be obtained by a person skilled in the art without making any inventive step, based on the embodiments and/or examples of the present invention, belong to the scope of protection of the present invention.
Directional terms used in the present invention, such as [ upper ], [ lower ], [ left ], [ right ], [ front ], [ rear ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terminology is used for the purpose of describing and understanding the invention and is in no way limiting. The terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature.
Aiming at the problem of low alignment precision of Micro LED chips of the conventional Micro LED display panel, the invention provides a preparation method of the Micro LED display panel, which can solve the problem.
In an embodiment, referring to fig. 1, fig. 1 shows a flowchart of a method for manufacturing a Micro LED display panel according to an embodiment of the present invention. As shown in fig. 1, a method for manufacturing a Micro LED display panel according to an embodiment of the present invention includes:
s1, preparing an array substrate, wherein the array substrate comprises sub-pixel areas arranged in an array;
s2, preparing a Micro LED chip on the temporary substrate;
and S3, aligning the temporary substrate with the array substrate, and transferring the Micro LED chip to the array substrate.
According to the embodiment of the invention, the Micro LED chip is prepared on the temporary substrate, and then the temporary substrate and the array substrate are aligned for one time, so that the Micro LED chip is transferred onto the array substrate, the transfer alignment times of the Micro LED chip are reduced, the risk of position deviation of the Micro LED chip is reduced, the alignment precision of the Micro LED chip is improved, and the display yield of the Micro LED display panel is improved.
Specifically, referring to fig. 2, fig. 2 shows a schematic structural diagram of a method for manufacturing a Micro LED display panel according to an embodiment of the present invention.
In an embodiment, referring to fig. 2 (a), step S1 is to prepare an array substrate, the step of preparing the array substrate including the sub-pixel regions arranged in an array includes preparing an active layer, a gate layer, a source/drain layer, and a substrate contact electrode layer on a substrate, and the array substrate 210 may be prepared by any method known to those skilled in the art, and is not limited herein. The prepared array substrate 210 comprises sub-pixel regions 201, the sub-pixel regions 201 are arranged on the surface of the array substrate 210 in an array mode and correspond to light-emitting sub-pixels of a Micro LED display panel, the outer surface of the array substrate 210 in the sub-pixel regions 210 comprises substrate contact electrodes, the substrate contact electrodes are used for being electrically connected with Micro LED chips, and meanwhile the substrate contact electrodes are electrically connected with a driving circuit in the array substrate 210.
In one embodiment, referring to fig. 2 (b) - (d), the step S2 of preparing the Micro LED chip on the temporary substrate includes:
micro LED chips were fabricated on a sapphire substrate. Specifically, referring to fig. 2 (b), the sapphire substrate is a sapphire glass substrate. The Micro-LED chip 222 includes an intrinsic layer, an N-type gallium nitride layer, a multi-quantum well layer, a P-type gallium nitride layer, an insulating layer, a current diffusion layer, a protective layer, and N-type and P-type electrode layers sequentially stacked on a sapphire substrate 221, the multi-quantum well layer is disposed between the N-type gallium nitride layer and the P-type gallium nitride layer, the multi-quantum well layer generally includes a plurality of stacked indium gallium nitride layers and gallium nitride layers, which determine the light emitting color of the Micro-LED130, the insulating layer and the protective layer generally include insulating material layers such as silicon oxide or silicon nitride, the current diffusion layer is generally made of transparent indium tin oxide, which may also be graphene or other metals, and the N-type and P-type electrode layers are any one of metals such as platinum, gold, nickel, chromium, or alloys thereof. The Micro-LED chip 222 may also be of other configurations known to those skilled in the art. The Micro LED chip 222 can be prepared by any method known to those skilled in the art for preparing Micro LED chips, and is not particularly limited herein. It should be noted that, a chip contact electrode is disposed on a side of the Micro LED chip 222 away from the sapphire glass substrate 221, the chip contact electrode corresponds to a substrate contact electrode on the array substrate 210, and when the substrate contact electrode is an anode, the chip contact electrode is an N-type electrode; when the substrate contact electrode is a cathode, the chip contact electrode is a P-type electrode.
Preparing an adhesive layer on the temporary substrate. Specifically, referring to fig. 2 (c), the temporary substrate 223 is a transparent substrate, which may be a rigid transparent substrate made of a transparent inorganic material or a rigid transparent substrate made of a transparent organic material, and the transparent substrate can stably support the sapphire on which the Micro LED chip is grown, and is preferably a transparent glass substrate. The Adhesive layer 224 is a transparent film structure with good adhesion performance, the Adhesive layer 224 has double-sided adhesion, that is, the lower surface of the Adhesive layer 224 is adhered to the temporary substrate 223, the upper surface of the Adhesive layer 224 is used for adhering the sapphire substrate 221, the Adhesive layer 224 may be a transparent double-sided tape, or may be a transparent Adhesive layer formed on the temporary substrate 223, including but not limited to a transparent optical Adhesive (OCA), and the thickness of the Adhesive layer 224 is in a range of 100 angstroms to 2 microns.
A sapphire substrate is bonded to the adhesive layer. Specifically, referring to fig. 2 (d), a sapphire substrate is closely arranged on a temporary substrate 223, and the sapphire substrate 221 on which the Micro LED chips 222 are grown is bonded to the temporary substrate 223 through an adhesive layer 224. Meanwhile, the Micro LED chips 222 on the temporary substrate 223 are in one-to-one correspondence with the sub-pixel regions 201 on the array substrate 210.
In one embodiment, referring to fig. 2 (e) - (f), the step S3 of aligning the temporary substrate with the array substrate and transferring the Micro LED chips to the array substrate includes:
one side of the Micro LED chips 222 on the temporary substrate 223 faces the array substrate 210, so that the Micro LED chips 224 are aligned with the sub-pixel regions 201 on the array substrate 210 one by one, as shown in fig. 2 (e).
And peeling the sapphire substrate and the Micro LED chip. By using a Laser Lift-Off process (LLO for short), the temporary substrate 223 is irradiated with ultraviolet light 230, the ultraviolet light 230 passes through the transparent temporary substrate 223, the transparent adhesive layer 224 and the sapphire substrate 221, the Micro LED chip 222 is irradiated, the gallium nitride intrinsic layer is ablated by the ultraviolet light, and a small amount of expanded nitrogen is generated, so that the Micro LED chip 222 is peeled from the sapphire substrate 221.
The Micro LED chips were transferred to an array substrate. Referring to fig. 2 (f), specifically, the chip contact electrodes of the Micro LED chip 222 are electrically connected to the substrate contact electrodes of the array substrate 210 through the bonding layer, and the Micro LED chip 222 is fixed to the array substrate 210 through the adhesive layer. The material of the adhesive layer may be any adhesive material known to those skilled in the art, such as optical adhesive, temperature-sensitive adhesive, pressure-sensitive adhesive, etc., and is not limited herein. The bonding layer is made of a metal conductive material, such as a metal welding material or a conductive adhesive layer, and the metal material can form the bonding layer by adopting a welding process so as to electrically connect the chip contact electrode and the substrate contact electrode. The Conductive adhesive layer, such as an Anisotropic Conductive Film (ACF), may be directly adhered to electrically connect the chip contact electrode and the substrate contact electrode.
In summary, the embodiment of the present invention provides a method for manufacturing a Micro LED display panel, where the method includes: preparing an array substrate, wherein the array substrate comprises sub-pixel regions arranged in an array; preparing a Micro LED chip on a temporary substrate; and aligning the temporary substrate with the array substrate, and transferring the Micro LED chip to the array substrate. According to the invention, the Micro LED chip is prepared on the temporary substrate, and then the temporary substrate and the array substrate are aligned for one time, so that the Micro LED chip is transferred onto the array substrate, thereby reducing the transferring and aligning times of the Micro LED chip, reducing the risk of position deviation of the Micro LED chip, improving the aligning precision of the Micro LED chip, and further improving the display yield of the Micro LED display panel.
The method for manufacturing the Micro LED display panel provided by the embodiment of the present invention is described in detail above, and the principle and the embodiment of the present invention are explained in the present document by applying specific examples, and the description of the above embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (10)

1. A preparation method of a Micro LED display panel is characterized by comprising the following steps:
preparing an array substrate, wherein the array substrate comprises sub-pixel regions arranged in an array;
preparing a Micro LED chip on a temporary substrate;
and aligning the temporary substrate with the array substrate, and transferring the Micro LED chip to the array substrate.
2. A method of fabricating a Micro LED display panel as recited in claim 1, wherein the step of fabricating a Micro LED chip on a temporary substrate includes:
preparing a Micro LED chip on a sapphire substrate;
preparing a bonding layer on the temporary substrate;
and adhering the sapphire substrate on the bonding layer.
3. A method of making a Micro LED display panel according to claim 2, wherein said step of bonding said sapphire substrate to said bonding layer comprises:
the sapphire substrate is closely arranged on the temporary substrate, and the Micro LED chips correspond to the sub-pixel areas on the array substrate one to one.
4. A method of fabricating a Micro LED display panel according to claim 1, wherein the step of aligning the temporary substrate with the array substrate and transferring the Micro LED chips to the array substrate includes:
one side of the Micro LED chip on the temporary substrate faces the array substrate, so that the Micro LED chip and the sub-pixel regions on the array substrate are in one-to-one correspondence;
peeling the sapphire substrate and the Micro LED chip;
and transferring the Micro LED chip to the array substrate.
5. A method of making a Micro LED display panel as in claim 4, wherein the step of peeling the sapphire substrate from the Micro LED chip comprises:
and irradiating the temporary substrate by adopting ultraviolet light to strip the sapphire substrate and the Micro LED chip.
6. A method of making a Micro LED display panel as recited in claim 4, wherein the step of transferring the Micro LED chips to the array substrate includes;
and connecting the Micro LED chip with the array substrate.
7. A method of making a Micro LED display panel as recited in claim 6, wherein the step of attaching the Micro LED chip to the array substrate includes;
electrically connecting the Micro LED chip with the array substrate through a bonding layer;
and the Micro LED chip is fixed on the array substrate through an adhesive layer.
8. A method of making a Micro LED display panel as recited in claim 1, wherein the temporary substrate is a transparent substrate.
9. A method of making a Micro LED display panel as recited in claim 2, wherein the bonding layer is a transparent bonding layer.
10. A method of making a Micro LED display panel as recited in claim 9, wherein the bonding layer has a thickness in the range of 100 angstroms to 2 microns.
CN202111319140.1A 2021-11-09 2021-11-09 Preparation method of Micro LED display panel Pending CN114122225A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475712A (en) * 2015-12-01 2018-08-31 夏普株式会社 Image formation component
CN109599409A (en) * 2017-09-20 2019-04-09 先进科技新加坡有限公司 For assembling the multi-spotting connection technique of light-emitting element matrix
CN110100318A (en) * 2016-12-22 2019-08-06 夏普株式会社 Display device and manufacturing method
US20200225277A1 (en) * 2019-01-15 2020-07-16 Tzu-Yi Kuo Micro LED Display Panel
US20210098278A1 (en) * 2019-09-26 2021-04-01 Boe Technology Group Co., Ltd. Mass transfer method and device for micro light emitting diode chips
CN112968080A (en) * 2020-08-18 2021-06-15 重庆康佳光电技术研究院有限公司 Red light LED chip and preparation method thereof
JP2021163945A (en) * 2020-04-03 2021-10-11 株式会社ジャパンディスプレイ Mount method for light-emitting element, and display device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475712A (en) * 2015-12-01 2018-08-31 夏普株式会社 Image formation component
CN110100318A (en) * 2016-12-22 2019-08-06 夏普株式会社 Display device and manufacturing method
CN109599409A (en) * 2017-09-20 2019-04-09 先进科技新加坡有限公司 For assembling the multi-spotting connection technique of light-emitting element matrix
US20200225277A1 (en) * 2019-01-15 2020-07-16 Tzu-Yi Kuo Micro LED Display Panel
US20210098278A1 (en) * 2019-09-26 2021-04-01 Boe Technology Group Co., Ltd. Mass transfer method and device for micro light emitting diode chips
JP2021163945A (en) * 2020-04-03 2021-10-11 株式会社ジャパンディスプレイ Mount method for light-emitting element, and display device
CN112968080A (en) * 2020-08-18 2021-06-15 重庆康佳光电技术研究院有限公司 Red light LED chip and preparation method thereof

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