CN114122172A - 双面晶硅光伏透光窗户、制造方法及窗帘系统 - Google Patents
双面晶硅光伏透光窗户、制造方法及窗帘系统 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000003466 welding Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 230000009471 action Effects 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 5
- 238000009432 framing Methods 0.000 claims description 4
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- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 241000446313 Lamella Species 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
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Abstract
本发明公开了一种双面晶硅光伏透光窗户、制造方法及窗帘系统,此双面晶硅光伏透光窗户包括第一透光层、电池片层和第二透光层,所述电池片层夹设于所述第一透光层与第二透光层之间,所述电池片层包括多个电池片串,各所述电池片串包括多个电池片,各所述电池片间隔布置并通过连接件连接,各所述电池片串之间间隔布置且通过汇流条相互连接,所述电池片为晶硅双面电池片。本发明具有结构简单、透光性好、发电效率高且成本低等优点。
Description
技术领域
本发明主要涉及光伏技术领域,具体涉及一种双面晶硅光伏透光窗户、制造方法及窗帘系统。
背景技术
在双面组件还没有推行的时候,BI PV已经开始了各类产品生产,导致当时构想没有设计到背面发电的可行性,另外相应缺少合适的反光源,所以当时的主流产品是单面电池片。
另外,常见的透光率的BI PV产品,日常采光需求需要一定的透光率,能因为考虑全部发电而导致人们生活受影响,所以透光率需要大于50%,而目前基本是由常规电池片制作光伏组件减少串数或增加巨大间隔进行透光,形成强光和暗影交错,透光的情况非常不均匀影响办公和家居体验。
其次,BI PV产品中窗户的采光经常需要人工去拉动窗帘的上升下降调节,而一般窗户安装智能窗户就涉及额外光感器和额外电力供应,增加成本,失去人们使用和购买驱动力。
目前相关的文献有光伏透光幕墙(申请号CN201320169102.7)和一种光伏窗户(申请号CN201922124030.4)。其中光伏透光幕墙是由玻璃幕墙、光伏薄膜电池、光敏控制器、手动控制器、卷轴组成,光伏薄膜电池是卷在卷轴上,光敏控制器对室内光线强弱进行评估并控制卷轴的收放,手动控制器可以对光敏控制器的进行动作补充,整个结构在在玻璃幕墙内。上述专利文献使用的薄膜电池片做窗户的卷轴进行发电,继而利用光敏电阻去控制卷轴调节室内进入光线,但是薄膜电池相对晶硅电池有几个劣势,一个是相通的面积和透光率的情况下,薄膜的光电转化率只是晶硅1/2倍;其次薄膜是做为窗帘卷轴,无法做到背面接收反射光发电;第三是薄膜电池在长期上下运动后会产生机械劳损,其整体寿命没有封装在双层钢化玻璃里面的晶硅的长;最后因为需要增加光敏电阻来反馈光线强弱,增加了制造成本。
一种光伏窗户包括窗户边框、嵌于所述窗户边框中的光伏组件、与所述窗户边框相连的调节支架,所述光伏组件在远离光照方向上包括依次层叠的第一基板、第一胶膜层、电池片层、第二胶膜层、第二基板。光伏窗户包括窗户边框、镶嵌在窗户边框中的光伏组件以及调节支架,光伏窗户同样具有传统窗户通光、透气的作用,同时光伏组件还可以利用太阳能进行发电,并且通过调节支架可以保证光伏窗户的受光面最大程度的与太阳光线保持垂直,使发电量达到最大;在满足光伏建筑一体化的要求的同时,将光伏组件与窗户边框直接结合,结构简单,光伏窗户的生产成本低,利于光伏窗户的广泛应用。上述利用封装排版工艺的晶硅太阳能电池制作的窗户发电,同时利用机械结构调节窗户的整体角度,内部的电池片排列是常规的封装工艺,无透光间隔,电池片整体不透光,导致雨天或需要关闭窗户情况下,室内会形成暗室。
发明内容
本发明要解决的技术问题就在于:针对现有技术存在的问题,本发明提供一种结构简单且易于实现的双面晶硅光伏透光窗户、制造方法及窗帘系统。
为解决上述技术问题,本发明提出的技术方案为:
一种双面晶硅光伏透光窗户,包括第一透光层、电池片层和第二透光层,所述电池片层夹设于所述第一透光层与第二透光层之间,所述电池片层包括多个电池片串,各所述电池片串包括多个电池片,各所述电池片间隔布置并通过连接件连接,各所述电池片串之间间隔布置且通过汇流条相互连接,所述电池片为晶硅双面电池片。
作为上述技术方案的进一步改进:
所有电池片串的电池片的横向间隔距离相同,且纵向间隔距离相同。
所述第一透光层和第二透光层均为玻璃。
各所述电池片串的多个电池片之间并联,各所述电池片串之间相互串联。
本发明还公开了一种基于如上所述的双面晶硅光伏透光窗户的制造方法,包括步骤:
将晶硅双面电池片切割细长条状电池片;
对各电池片进行排版,各电池片之间间隔相同,再对一组电池片通过连接件进行焊接并联以形成电池片串;
将多个电池片串进行间隔布置,电池片串之间的间距与各电池片之间的间距相同,再通过汇流条将各电池片串进行首位串联,引出最终的正负极;
将上述电池片层层压在第一透光层与第二透光层之间,进行装框,得到最终的双面晶硅光伏透光窗户。
作为上述技术方案的进一步改进:
通过焊接工装进行各电池片的排版,其中焊接工装包括板体,所述板体上设置有用于放置电池片的凹槽,所述板体上设置有用于焊接各电池片的通孔。
本发明还公开了一种窗帘系统,包括窗帘、驱动窗帘升降的驱动件、控制单元和如上所述的双面晶硅光伏透光窗户,所述控制单元分别与所述驱动件和双面晶硅光伏透光窗户的电池片层相连;所述控制单元用于获取所述电池片层的实时电流值,来控制所述驱动件的动作以实现窗帘的智能升降。
作为上述技术方案的进一步改进:
所述驱动件为驱动电机。
所述窗帘为白色窗帘。
本发明还公开了一种基于如上所述窗帘系统的控制方法,包括步骤:
所述控制单元获取所述电池片层的实时电流值,再根据实时电流值得到实时光强;
根据实时光强控制驱动件的动作,来实现窗帘的高度升降;其中实时光强越大,窗帘下降的高度越大,实现对光线的遮挡;实时光强越小,窗帘上升的高度越大,保证光线通过电池片之间的缝隙进入室内;另外下降的窗帘用于反射光线至电池片层。
与现有技术相比,本发明的优点在于:
(1)本发明的双面晶硅光伏透光窗户,通过上述间隔布置的长条状电池片均匀间隔布置,其中长条状电池片之间的缝隙能够实现均匀透光;整体电池片层夹设于两块玻璃之间,结构稳定可靠,使用寿命长;采用晶硅双面电池片能够提高发电量;上述整体结构简单且易于实现。
(2)本发明将常规光伏双面晶硅电池片切割成细长条状电池片,利用焊接工装排版焊接,交错并联防止透光处短路,透光间隔宽度和电池片宽度一致的,进行双玻工艺层压,使得光线透光率高且均匀。
(3)本发明的窗帘系统及控制方法,创新性通过光伏电池片层自身产生的电流来进行窗帘的调节,不仅调节精准,而且不需要配置其它感光元件,成本低;另外整个窗帘系统中各部件的能量均可以由光伏组件来提供,进一步降低整个窗帘系统的成本。上述方案能够解决双面光伏电池片在BI PV的应用,特别适用于窗户需要采光的环境使用。
附图说明
图1为本发明的窗户在实施例的结构示意图。
图2为本发明中的电池片层在实施例的结构示意图。
图3为本发明中的电池片层所对应的电路原理图。
图4为本发明的制造方法在实施例的流程图。
图5为本发明中的焊接工装在实施例的结构图。
图6为本发明的窗帘系统在实施例的结构图。
图7为本发明中的电流与光强的正比例关系图。
图例说明:1、电池片层;11、电池片串;111、电池片;112、连接件;2、焊接工装;201、凹槽;202、通孔;3、窗帘;4、驱动件。
具体实施方式
以下结合说明书附图和具体实施例对本发明作进一步描述。
如图1和图2所示,本发明实施例的双面晶硅光伏透光窗户,包括第一透光层、电池片层1和第二透光层,电池片层1夹设于第一透光层与第二透光层之间,电池片层1包括多个电池片串11,各电池片串11包括多个长条状电池片111,各电池片111间隔布置并通过连接件112连接,各电池片串11之间间隔布置且通过汇流条相互连接,电池片111为晶硅双面电池片。具体地,第一透光层和第二透光层均为玻璃;所有电池片串11的电池片111的横向间隔距离相同,且纵向间隔距离相同;各电池片串11的多个电池片111之间并联,各电池片串11之间相互串联,最终形成的电路如图3所示。
本发明的双面晶硅光伏透光窗户,通过上述间隔布置的长条状电池片111均匀间隔布置,其中长条状电池片111之间的缝隙能够实现均匀透光;整体电池片层1夹设于两块玻璃之间,结构稳定可靠,使用寿命长;采用晶硅双面电池片111能够提高发电量;上述整体结构简单且易于实现。
如图4所示,本发明实施例还公开了一种基于如上所述的双面晶硅光伏透光窗户的制造方法,包括步骤:
将晶硅双面电池片切割细长条状电池片111;
对各电池片111进行排版,各电池片111之间间隔相同,再对一组电池片111通过连接件112进行焊接并联以形成电池片串11;
将多个电池片串11进行间隔布置,电池片串11之间的间距与各电池片111之间的间距相同,再通过汇流条将各电池片串11进行首位串联,引出最终的正负极;
将上述电池片层1层压在第一透光层与第二透光层之间,进行装框,得到最终的双面晶硅光伏透光窗户。
在一具体实施例中,通过焊接工装2进行各电池片111的排版,其中焊接工装2如图5所示,具体包括板体,板体上设置有用于放置电池片111的凹槽201,板体上设置有用于焊接各电池片111的通孔202。
下面再结合一完整的具体实施例对上述制造方法做进一步详细说明:
1、切割双面电池片,利用常规的光伏激光切片设备,根据设计需求将晶硅双面电池片切割细长条电池片111;
2、利用焊接工装2进行电池片111的排版,放置电池片111位于凹槽201区域,以12个小电池片111进行并联一组,连接件112(光伏焊带)垂直放置电池片111上,最终制作并联的电池片串11,如图2中上部分所示;另一组为焊接并联,形成电池片串11如图2中下部分所示;上述工装可以防止正负极焊带在电池片111间隔镂空触碰出现短路;
3、将玻璃放置一层EVA的胶膜,在按照图1所示的版图将图2焊接好的电池片串11连接,串与串之间的间距与片间距保持一致,最后串与串之间用光伏汇流条进行首位串联,引出最终的正负极,覆盖电池片111上一层EVA胶膜,再覆盖玻璃;
4、通用双玻光伏电池片111的层压工艺,之后组件进行装框,接线盒安装,完成组件的电性能测试;
5、根据实际需求的窗户尺寸安装合适大小的光伏组件,并对各窗户光伏进行串联连接到单独微型逆变器进行并网。
本发明将常规光伏双面晶硅电池片111(158.75mm-210mm)切割成细长条(10mm以内宽)光伏小电池片111,利用焊接工装2排版焊接,交错并联防止透光处短路,透光间隔宽度和电池片111宽度一致的,进行双玻工艺层压,使得光线透光率高且均匀。
如图6所示,本发明实施例还公开了一种窗帘系统,包括窗帘3、驱动窗帘3升降的驱动件4、控制单元和如上所述的双面晶硅光伏透光窗户,控制单元分别与驱动件4和双面晶硅光伏透光窗户的电池片层1相连;控制单元用于获取电池片层1的实时电流值,来控制驱动件4的动作以实现窗帘3的智能升降。
在一具体实施例中,驱动件4为电机。窗帘3为白色窗帘,其中白色窗帘的反光效果好,与双面晶硅光伏透光窗户相配合,能够实现双面晶硅光伏透光窗户的高效性。
本发明实施例进一步公开了一种基于如上所述窗帘系统的控制方法,包括步骤:
控制单元获取电池片层1的实时电流值,再根据实时电流值和晶硅组件的特性(如图7所示的电流与光强比例关系)得到实时光强;
根据实时光强控制驱动件4(如电机)的动作,来实现窗帘3的高度升降;其中实时光强越大,下降的窗帘3高度越大,实现对光线的遮挡;实时光强越小,窗帘3上升的高度越大,保证光线通过电池片111之间的缝隙进入室内;另外下降的窗帘3用于反射光线至电池片层1。当然,在实现上述窗帘3的智能控制的基础上,也可以通过设置来实现人工调节。
本发明的窗帘3系统及控制方法,创新性通过光伏电池片层1自身产生的电流来进行窗帘3的调节,不仅调节精准,而且不需要配置其它感光元件,成本低;另外整个窗帘3系统中各部件的能量均可以由光伏组件来提供,进一步降低整个窗帘3系统的成本。上述方案能够解决双面光伏电池片111在BI PV的应用,特别适用于窗户需要采光的环境使用。
以上仅是本发明的优选实施方式,本发明的保护范围并不仅局限于上述实施例,凡属于本发明思路下的技术方案均属于本发明的保护范围。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理前提下的若干改进和润饰,应视为本发明的保护范围。
Claims (10)
1.一种双面晶硅光伏透光窗户,其特征在于,包括第一透光层、电池片层(1)和第二透光层,所述电池片层(1)夹设于所述第一透光层与第二透光层之间,所述电池片层(1)包括多个电池片串(11),各所述电池片串(11)包括多个电池片(111),各所述电池片(111)间隔布置并通过连接件(112)连接,各所述电池片串(11)之间间隔布置且通过汇流条相互连接,所述电池片(111)为晶硅双面电池片。
2.根据权利要求1所述的双面晶硅光伏透光窗户,其特征在于,所有电池片串(11)的电池片(111)的横向间隔距离相同,且纵向间隔距离相同。
3.根据权利要求1或2所述的双面晶硅光伏透光窗户,其特征在于,所述第一透光层和第二透光层均为玻璃。
4.根据权利要求1或2所述的双面晶硅光伏透光窗户,其特征在于,各所述电池片串(11)的多个电池片(111)之间并联,各所述电池片串(11)之间相互串联。
5.一种基于权利要求1~4中任意一项所述的双面晶硅光伏透光窗户的制造方法,其特征在于,包括步骤:
将晶硅双面电池片切割细长条状电池片(111);
对各电池片(111)进行排版,各电池片(111)之间间隔相同,再对一组电池片(111)通过连接件(112)进行焊接并联以形成电池片串(11);
将多个电池片串(11)进行间隔布置,电池片串(11)之间的间距与各电池片(111)之间的间距相同,再通过汇流条将各电池片串(11)进行首位串联,引出最终的正负极;
将上述电池片层(1)层压在第一透光层与第二透光层之间,进行装框,得到最终的双面晶硅光伏透光窗户。
6.根据权利要求5所述的双面晶硅光伏透光窗户的制造方法,其特征在于,通过焊接工装(2)进行各电池片(111)的排版,其中焊接工装(2)包括板体,所述板体上设置有用于放置电池片(111)的凹槽(201),所述板体上设置有用于焊接各电池片(111)的通孔(202)。
7.一种窗帘系统,其特征在于,包括窗帘(3)、驱动窗帘(3)升降的驱动件(4)、控制单元和如权利要求1~4中任意一项所述的双面晶硅光伏透光窗户,所述控制单元分别与所述驱动件(4)和双面晶硅光伏透光窗户的电池片层(1)相连;所述控制单元用于获取所述电池片层(1)的实时电流值,来控制所述驱动件(4)的动作以实现窗帘(3)的智能升降。
8.根据权利要求7所述的窗帘系统,其特征在于,所述驱动件(4)为驱动电机。
9.根据权利要求7或8所述的窗帘系统,其特征在于,所述窗帘(3)为白色窗帘。
10.一种基于权利要求7或8或9所述窗帘系统的控制方法,其特征在于,包括步骤:
所述控制单元获取所述电池片层(1)的实时电流值,再根据实时电流值得到实时光强;
根据实时光强控制驱动件(4)的动作,来实现窗帘(3)的高度升降;其中实时光强越大,窗帘(3)下降的高度越大,实现对光线的遮挡;实时光强越小,窗帘(3)上升的高度越大,保证光线通过电池片(111)之间的缝隙进入室内;另外下降的窗帘(3)用于反射光线至电池片层(1)。
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