CN114122048A - Color light-emitting structure and preparation method thereof, and light-emitting module and preparation method thereof - Google Patents
Color light-emitting structure and preparation method thereof, and light-emitting module and preparation method thereof Download PDFInfo
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- CN114122048A CN114122048A CN202111181970.2A CN202111181970A CN114122048A CN 114122048 A CN114122048 A CN 114122048A CN 202111181970 A CN202111181970 A CN 202111181970A CN 114122048 A CN114122048 A CN 114122048A
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Abstract
The invention discloses a color light-emitting structure and a preparation method thereof, a light-emitting module and a preparation method thereof, wherein the color light-emitting structure comprises a transistor and an electroluminescent layer, and the transistor drives the electroluminescent layer to emit light; the transistor comprises a conductive layer, wherein the conductive layer comprises a source region, a drain region and a channel region positioned between the source region and the drain region, and the electroluminescent layer is arranged on the surface of the source region and/or the drain region of the conductive layer. The colorful light-emitting structure of the invention only needs to arrange the electroluminescent layer on the conducting layer of the transistor, does not need to prepare a Micro-LED chip array, does not need to use a flip-chip bonding technology, not only has simpler structure, but also greatly reduces the steps and difficulty of the preparation process.
Description
Technical Field
The invention relates to the technical field of light-emitting display, in particular to a color light-emitting structure and a preparation method thereof, and a light-emitting module and a preparation method thereof.
Background
In the prior art, the light-emitting module comprises a light-emitting panel and a driving panel arranged below the light-emitting panel, the driving panel drives the light-emitting panel to emit light, the driving panel comprises a transistor array, the light-emitting panel comprises a Micro-LED chip array, and when the driving panel and the light-emitting panel are combined together, the driving panel and the light-emitting panel are integrated by adopting a flip-chip welding technology.
However, on one hand, the Micro-LED chip array is complex in manufacturing process, and on the other hand, when the light emitting panel of the Micro-LED chip array is bonded with the driving panel through the flip chip bonding technology, firstly, a micron-sized flip chip bonding pad array with high density and high uniformity is manufactured on the driving panel through electron beam evaporation and low-temperature reflow, and then, the alignment and bonding precision is improved by utilizing the technology of combining laser alignment and an optical image mode.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a color light-emitting structure, a preparation method thereof, a light-emitting module and a preparation method thereof, which avoid the use of a flip-chip bonding technology and reduce the difficulty of the preparation process.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a color light-emitting structure comprises a transistor and an electroluminescent layer, wherein the electroluminescent layer is arranged on the surface of the transistor and drives the electroluminescent layer to emit light;
the transistor comprises a conductive layer, wherein the conductive layer comprises a source region, a drain region and a channel region positioned between the source region and the drain region, and the electroluminescent layer is arranged on the surface of the source region and/or the drain region of the conductive layer.
The invention also discloses a preparation method of the color light-emitting structure, which comprises the following steps:
forming a conductive layer of a transistor, the conductive layer comprising a source region, a drain region, and a channel region between the source region and the drain region;
and forming an electroluminescent layer on the surface of the source region and/or the drain region respectively.
The invention also discloses a light-emitting module which comprises the color light-emitting structure.
Further, the light emitting module comprises a driving panel, the driving panel comprises a substrate and a transistor array arranged on the substrate, the transistor array comprises a plurality of transistors in the color light emitting structure, and the electroluminescent layer is arranged on the surface of the source region and/or the drain region of the conductive layer of each transistor.
The invention also discloses a preparation method of the light-emitting module, which comprises the following steps:
providing the substrate, forming the transistor array on the substrate, and exposing the surface of the source region and/or the drain region;
and forming the electroluminescent layer on the surface of the exposed source region and/or the exposed drain region.
The embodiment of the invention has the following beneficial effects:
in the embodiment of the invention, the electroluminescent layer is arranged on the surface of the source region and/or the drain region, and the conductive layer can conduct electricity, so that when the transistor is powered on, the conductive layer conducts electricity, namely when the source region and/or the drain region has current flowing through, the current can excite the electroluminescent layer on the surface of the conductive layer to emit light, and a color light-emitting structure is formed. The colorful light-emitting structure of the invention only needs to arrange the electroluminescent layer on the conducting layer of the transistor, does not need to prepare a Micro-LED chip array, does not need to use a flip-chip bonding technology, not only has simpler structure, but also greatly reduces the steps and difficulty of the preparation process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Wherein:
fig. 1 is a schematic structural diagram of a color light emitting structure according to an embodiment of the invention.
Fig. 2 is a schematic structural diagram of a color light emitting structure according to another embodiment of the invention.
Fig. 3 is a schematic structural diagram of a color light emitting structure according to another embodiment of the invention.
FIG. 4 is a schematic structural diagram of an electroluminescent layer deposited by an electrodeposition method according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 3, the invention discloses a color light emitting structure, which includes a transistor 10 and an electroluminescent layer 20, wherein the transistor 10 drives the electroluminescent layer 20 to emit light; the transistor 10 includes a conductive layer 11, the conductive layer 11 includes a source region 111, a drain region 112 and a channel region 113 between the source region 111 and the drain region 112, and the electroluminescent layer 20 is disposed on the surface of the source region 111 and/or the drain region 112 of the conductive layer 11. By disposing the electroluminescent layer 20 on the surface of the source region 111 and/or the drain region 112, since the conductive layer 11 can conduct electricity, when the transistor 10 is powered on, the conductive layer 11 conducts electricity, that is, when current flows through the source region 111 and/or the drain region 112, the current excites the electroluminescent layer 20 on the surface of the source region 111 and/or the drain region 112 to emit light, so as to form a color light emitting structure. The color light-emitting structure only needs to arrange the electroluminescent layer 20 on the conducting layer 11 of the transistor 10, and in the color light-emitting structure, the electroluminescent layer 20 can adopt spin coating, printing or electrodeposition methods to form the electroluminescent layer 20 on a device, so that Micro-LED chip array preparation is avoided, a flip chip technology is not needed, the structure is simpler, and the preparation process steps and difficulty are greatly reduced. It should be noted that the color light emitting structure in the present invention may be a light emitting structure of a single color, or may be a light emitting structure including multiple colors, for example, a full-color light emitting structure including three colors of red, yellow, and blue.
At present, the most widely used display is a Liquid Crystal Display (LCD), but the LCD emits light by means of a backlight module, and has a low luminous efficiency and a complex display structure. Compared with the LCD technology, the current increasingly popular is the Organic Light Emitting Diode (OLED), which is thinner and clearer than the LCD, and has the advantages of low power consumption, high light emitting efficiency, rich colors, flexible display and the like, and the light emitting mode is self-light emitting, and the light source utilization rate can reach 100%. However, since the OLED film is an organic substance and is affected by water and oxygen in the air, the stability of the device is poor, when the device operates at a high voltage, the device heats and dissolves the organic film, which results in a reduction in the lifetime of the device, and most organic light-emitting materials have low color purity and are not easy to display vivid and rich colors; meanwhile, the driving mode of the device is complex, a large problem occurs after the size of the device becomes large, and mass production of large-size screens cannot be realized. The Micro-LED can overcome the defects of unstable organic film layer, low color purity and the like of the OLED, has the characteristics of high resolution, low power consumption, high brightness, high contrast, high reaction speed, thin thickness, long service life and the like, and the power consumption can be as low as 10 percent of that of the LCD and 50 percent of that of the OLED, and is a next generation display technology expected in the industry. However, the Micro-LED chip has a complex preparation process, the Micro-LED light emitting chip needs to be flip-chip bonded with the TFT driving chip to realize light emission of the Micro-LED chip, high precision positioning is needed, the precision requirement is high, the preparation process cost is high, poor problems such as insufficient solder and short circuit are easily caused, and the repair cost is high.
The quantum dot material is a nano-scale inorganic semiconductor material capable of emitting light, has high stability, and the light-emitting spectrum can be realized by adjusting the particle size, so that the quantum dot material can cover the whole visible light range, has the advantages of saturated color, high color purity and the like, and is a novel light-emitting material. The quantum dot technology and the TFT back plate technology are combined, the technology is a great innovation, the process structure is simple, and the light-emitting device has the advantages of the Micro-LED technology and is a light-emitting display technology with the most development prospect in the future.
In a preferred embodiment, the electroluminescent layer 20 can be an electroluminescent inorganic semiconductor quantum dot material, which is more stable than an organic electroluminescent material and is the most advanced quantum dot light emitting or display structure. Specifically, the electroluminescent inorganic semiconductor quantum dot material may be group IIB-VIA (CdSe, CdS, ZnSe, CdS, etc.) semiconductor quantum dot nanoparticles group IB-IIIA-VIA (CuInS2, AgInS2, etc.) semiconductor quantum dot nanoparticles, or any combination of the above semiconductor quantum dot nanoparticles. The electroluminescent inorganic semiconductor quantum dot material can be formed on the device by adopting a spin coating, printing or printing method, so that the preparation of a Micro-LED chip array is avoided, a flip-chip welding technology is not needed, the structure is simpler, and the preparation process steps and difficulty are greatly reduced.
In another embodiment, the electroluminescent layer 20 material can also be organic small molecule (e.g., anthracene, aromatic diamine, 8-hydroxyquinoline, etc.) or high molecule (e.g., polyparaphenylene vinylene PPV and its derivatives, etc.) electroluminescent material, etc. The Micro-LED chip array can also be formed on the device by adopting a spin coating, printing or printing method, so that the preparation of the Micro-LED chip array is avoided, the flip-chip bonding technology is not needed, the structure is simpler, and the preparation process steps and difficulty are greatly reduced.
In another embodiment, the electroluminescent layer 20 material may also be a composite of an organic electroluminescent material in combination with a photoluminescent inorganic semiconductor quantum dot material. The organic electroluminescent material can be any organic micromolecule or polymer electroluminescent material, and the photoluminescent inorganic semiconductor quantum dot material can be IIIA-VA group (InP, InAs, GaAs, GaP, GaInP, GaAlAs, GaN and the like) semiconductor quantum dot nanoparticles and the like. The composite material formed by combining the organic electroluminescent material with the photoluminescent inorganic semiconductor quantum dot material can also be formed on a device by adopting a spin coating, printing or printing method, so that a Micro-LED chip array is prevented from being prepared, a flip-chip welding technology is not needed, the structure is simpler, and the preparation process steps and difficulty are greatly reduced.
In another embodiment, the electroluminescent layer 20 may also be an electroluminescent quantum dot material with charges ionized in solution, and the electroluminescent quantum dot material is deposited on the surface of the transistor 10 by an electrodeposition method, compared with a printing preparation method, the electrodeposition method can realize the preparation of quantum dots with large area and lower cost, the quantum dot layer prepared by the electrodeposition method has the least damage to the quantum dot, and the quantum dot layer formed by the electrophoretic deposition has smooth appearance and uniform and compact texture, and the thickness, stacking density, refractive index and the like of the formed quantum dot layer can be controlled by controlling the electric field strength, deposition time, the electroluminescent quantum dot material, concentration and the charge quantity thereof, so that the electrophoretic method has the advantages of precise thickness control, small quantum dot damage, simple operation, low cost and the like, and is easy to combine with the photolithography technology to form various patterns by selective electrophoretic deposition, the precision of the pattern can be controlled in a range of several nanometers, the minimum can even reach 2nm, the electrophoretic technology is particularly suitable for preparing high-precision and high-PPI devices on a large scale, and the electrophoretic deposition technology is not limited to a rigid substrate, but also can be expanded to a flexible substrate, a 3D structure and other complex structure surfaces. The thickness of the quantum dot layer prepared by the electrophoresis method can be accurately controlled within a large range from a few nanometers to a few tens of micrometers, and the thickness requirement of the color conversion layer of the liquid crystal display can be met, and the precision requirements of an OLED, a Micro-LED and a QLED can also be met.
The morphology and stability of the quantum dot layer formed by electrodeposition are studied to find that: the quantum dot film formed by electrodeposition is composed of larger particles than the quantum dot film prepared by spin coating, the deposited quantum dots are not dissolved and dispersed by a solvent and can be stably attached, cross contamination of multicolor quantum dot patterns in a plane is effectively avoided, and the characteristics increase the effective optical path length, so that the absorption and emission of internal active substances are enhanced. Therefore, quantum dot thin films prepared by electrodeposition may have better light emitting properties than quantum dot thin films prepared by spin coating. The research also finds that: the excitation spectrum and the emission spectrum of the quantum dot are kept unchanged before and after the electrodeposition, so that the quantum dot film prepared by the electrodeposition has higher brightness conversion efficiency compared with the spin coating.
Further, in a particular embodiment, the electroluminescent quantum dot material ionically charged in solution may include a quantum dot core and a ligand shell encapsulating the quantum dot core, the ligand shell may be positively or negatively charged in solution, and at least one of the ligand shell and the quantum dot core is capable of electroluminescence. The electroluminescent quantum dot material with charges in the solution can be uniformly dispersed in the solution, also called as colloidal quantum dot, and can generate an electrodeposition phenomenon under the action of an electric field after being uniformly dispersed in the solution. Further, in one embodiment, the quantum dot core can be any of the photoluminescent inorganic semiconductor quantum dot materials described above, in which case the organic ligand is an organic small molecule or organic high molecular polymer capable of electroluminescence and ionizing charges in solution, in another embodiment, the quantum dot core can also be any of the electroluminescent inorganic semiconductor quantum dot materials described above, in which case the organic ligand shell can be any of the electroluminescent organic ligands described above, for example, preferably containing-OH group, -COOH group, -NH group2Radical, -NH-radical and-NH4Examples of the organic polymer include a polymer of a small organic molecule or a polymer of a large organic molecule, and specifically include polyethylene glycol. In another embodiment, the quantum dot core may be any of the electroluminescent, inorganic semiconductor quantum dot materials described above, in which case the organic ligand shell may also be an organic ligand that is electroluminescent and charged in solution.
When the electroluminescent layer 20 is made of an electroluminescent quantum dot material capable of carrying charges in solution, the electroluminescent layer 20 is preferably prepared by an electrodeposition method, and a device with a surface to be deposited exposed is placed in a colloidal solution, the colloidal solution is powered on, and under the action of an electric field, the electroluminescent quantum dot material (i.e., the colloidal quantum dot) with charges ionized in the solution can move in the solution and be deposited at a specified position.
In another embodiment, the electroluminescent layer 20 may also include an organic electroluminescent material layer and a quantum dot material layer stacked in sequence, where the organic electroluminescent material layer may be any of the above organic electroluminescent materials, the quantum dot material layer may be any of the above photoluminescent inorganic semiconductor quantum dot material layers, and of course, any of the above electroluminescent inorganic semiconductor quantum dot material layers may also be used. The Micro-LED chip array can be sequentially formed on the device by adopting a spin coating, printing or printing method, so that the Micro-LED chip array is prevented from being prepared, a flip-chip welding technology is not needed, the structure is simpler, and the preparation process steps and difficulty are greatly reduced.
The transistor 10 may be any transistor, and may be classified by materials into a silicon-based transistor (the conductive layer 11 of which is made of silicon), a germanium-based transistor (the conductive layer 11 of which is made of germanium), and a compound semiconductor transistor (the conductive layer 11 of which is made of silicon carbide, gallium arsenide, gallium nitride, indium arsenide, indium nitride, indium gallium zinc oxide, and the like), the structure of the transistor 10 may be a PNP transistor, an NPN transistor, or a PPN transistor, and the transistors in each structure may be classified into a depletion type transistor and an enhancement type transistor.
Referring to fig. 1 to 3, in the present application, the electroluminescent layer 20 includes a plurality of light emitting units arranged in an array, and the display colors of the light emitting units may be the same or different, and when the display colors of the light emitting units are different, a full-color display device may be constructed. It is possible to display different colors under the same current by changing the material or diameter, etc. of the electroluminescent layer 20 of each light emitting cell.
The shape of the light-emitting units may be any shape, for example, circular, oval, rectangular, square, hexagonal, rhombic, etc., and the light-emitting units may be arranged in an array along two directions with a certain included angle, or may be arranged in sequence along one direction, for example, the strip-shaped light-emitting units may be arranged in sequence along one direction.
Of course, the electroluminescent layer 20 may also have a continuous layer structure.
Referring to fig. 1-3, in one embodiment, a transistor 10 includes a conductive layer 11, an insulating layer 12, and a gate layer 13 sequentially stacked, the insulating layer 12 and the gate layer 13 sequentially stacked over a channel region 113 of the conductive layer 11.
Referring to fig. 1, in this embodiment, the conductive layer 11 is a P-type substrate, the source region 111 and the drain region 112 of the P-type substrate are high concentration n-diffusion regions, respectively, and a channel region 113 is formed between the two high concentration n-diffusion regions, i.e., an n-type conductive channel region is formed, and the transistor 10 is an NPN transistor. The enhancement NPN transistor must have a forward bias on the gate and a conduction channel only occurs when the gate-source voltage is greater than the threshold voltage. The depletion type NPN transistor means that a conductive channel is generated when no grid voltage is applied (namely the grid source voltage is zero).
For the above NPN transistor, when the electroluminescent layer 20 is prepared by electrodeposition, since the source region 111 and the drain region 112 are high concentration n-diffusion regions, respectively, i.e., the source region 111 and the drain region 112 have the same polarity, the polarity of the electroluminescent quantum dot material capable of being charged in the solution electrodeposited into the source region 111 and the drain region 112 is opposite to that of the high concentration n-diffusion region.
Referring to fig. 2, in another embodiment, the conductive layer 11 is an N-type substrate, the source region 111 and the drain region 112 of the N-type substrate are high concentration P diffusion regions, respectively, and a channel region 113 is formed between the two high concentration P diffusion regions, i.e., a P-type conduction channel region is formed, and the transistor is a PNP transistor. An enhancement PNP transistor must have a forward bias on the gate and a conduction channel only occur when the gate-source voltage is greater than the threshold voltage. Depletion PNP transistor means that the conduction channel is generated when no gate voltage is applied (i.e. the gate-source voltage is zero).
For the PNP transistor, when the electroluminescent layer 20 is prepared by electrodeposition, since the source region 111 and the drain region 112 are high concentration P diffusion regions respectively, i.e. the source region 111 and the drain region 112 have the same polarity, the polarity of the electroluminescent quantum dot material (i.e. colloidal quantum dots) capable of being charged in the solution electrodeposited into the source region 111 and the drain region 112 is opposite to the polarity of the high concentration P diffusion region.
Referring to fig. 3, in another embodiment, the conductive layer 11 is a P-type substrate, the source region 111 is a high concentration P diffusion region, and the drain region 112 is a low concentration N diffusion region, i.e., a PPN transistor, in which the source region 111 and the drain region 112 have opposite polarities, so that the polarity of the charged electroluminescent quantum dot material in solution electrodeposited in the source region 111 is opposite to that of the high concentration P diffusion region, and the polarity of the charged electroluminescent quantum dot material in solution electrodeposited in the drain region 112 is opposite to that of the low concentration N diffusion region.
When the polarity of the source region 111 and the drain region 112 is the same, the polarity of the charged electroluminescent quantum dot material in the solution above the source region 111 and the drain region 112 is also the same, and the electroluminescent quantum dot material of the same color can be electrodeposited at the same time.
When the polarity of the source region 111 is different from that of the drain region 112, the polarity of the charged electroluminescent quantum dot material in the solution above the source region 111 and the drain region 112 is different, and electroluminescent quantum dot materials with different colors can be sequentially electrodeposited.
The invention also provides a preparation method of the color light-emitting structure, which comprises the following steps:
step 1: a conductive layer 11 of the transistor 10 is formed, the conductive layer 11 including a source region 111, a drain region 112, and a channel region 113 between the source region 111 and the drain region 112.
Specifically, referring to fig. 1 to 3, after the conductive layer 11 is formed, the insulating layer 12 and the gate layer 13 are sequentially formed, and then the surface of the source region 111 and/or the drain region 112 is exposed, and ions or holes may be doped in the source region 111 and/or the drain region 112 of the conductive layer 11 by using an ion implantation method or a hole implantation method.
Step 2: an electroluminescent layer 20 is formed on the surface of the source region 111 and/or the drain region 112, respectively.
In this step, the electroluminescent layer 20 may be formed on the surface of the source region 111 and/or the drain region 112 by spin coating, printing or electrodeposition.
Referring to fig. 4, in one embodiment, when an electrodeposition process is employed, the following steps are included:
step 21: preparing colloidal quantum dot solution, and dispersing the electroluminescent quantum dot material with ionized charges in any solution into the solution to form uniformly dispersed colloidal quantum dot solution.
In one embodiment, CdSe/ZnS is selected as a core structure and polyethylene glycol is selected as a shell structure to prepare the colloidal quantum dots, Propylene Glycol Methyl Ether Acetate (PGMEA) is adopted as a solution, and the weight portion of the solution is about 90 wt% (80 wt% -95 wt%) to obtain a colloidal quantum dot solution.
Step 22: putting the colloidal quantum dot solution prepared in the step 21 into an electrophoresis cell 40, putting the semi-finished device formed in the step 1 into the electrophoresis cell 40, inserting positive and negative electrodes of an electrophoresis device into the colloidal quantum dot solution, respectively communicating with conductive layers, electrifying the positive and negative electrodes, forming a communication circuit by the positive and negative electrodes of the electrophoresis device and the conductive layers of each transistor, allowing current to pass through the conductive layers of each transistor, and gradually depositing the colloidal quantum dots on the surfaces of the conductive layers. The thickness of the quantum dots is controlled by controlling the electric field intensity, the concentration of the quantum dots, the deposition time and the like. And after the deposition is finished, cleaning and removing the colloid solution remained on the surface of the semi-finished device to obtain the color light-emitting structure.
In one embodiment, multiple color electroluminescent layers are deposited to construct a full color display device, and when one color electroluminescent layer is deposited, a photoresist mask can be added on the other color electroluminescent layers, and the steps are repeated to form multiple color electroluminescent layers. The invention also discloses a light-emitting module which comprises the color light-emitting structure. Specifically, the light emitting module includes a driving panel, the driving panel includes a substrate 30 and a transistor array disposed on the substrate 30, the transistor array includes a plurality of transistors 10 in the color light emitting structure, the electroluminescent layer 20 is disposed on the surface of the source region 111 and/or the drain region 112 of the conductive layer 11 of the transistor 10, the transistor array provides power and driving control for each electroluminescent layer 20, and the electroluminescent layer 20 can be excited to emit light of different colors by adjusting the current magnitude of the conductive layer of each transistor.
In one embodiment, the transistor array includes a plurality of pixel display transistors and a plurality of pixel driving transistors, the conductive layer 11 of each pixel display transistor has an electroluminescent layer 20 disposed on the surface thereof, each pixel display transistor provides power to the electroluminescent layer 20 above the conductive layer thereof, and the pixel driving transistors provide driving control to the pixel display transistors. Generally, a plurality of pixel display transistor arrays are distributed in a display area (the display area corresponds to the position of a display device such as a display screen), pixel driving transistors are distributed at the periphery of the pixel display transistor arrays, and the pixel driving transistors are located in a non-display area.
The invention also discloses a preparation method of the light-emitting module, which comprises the following steps:
step 1: providing a substrate 30, forming a transistor array on the substrate 30, wherein the transistor 10 array comprises a plurality of transistors 10, and the surface of the source region 111 and/or the drain region 112 where the quantum dots are to be deposited is exposed.
Step 2: an electroluminescent layer 20 is formed on the surface of the exposed source region 111 and/or drain region 112. Specifically, the electroluminescent layer 20 may be formed on the surface of the source region 111 and/or the drain region 112 by spin coating, printing or electrodeposition.
The light-emitting module can be used as light-emitting or display equipment of electronic watches, mobile phones, flat panels, notebook computers and televisions, can also be used for manufacturing large-area display screens, has the advantages of low power consumption, high color purity, high color vividness, long service life and the like, and is more suitable for being used as flexible light-emitting or display equipment because the electroluminescent layer 20 is a thin layer and is directly laminated on the transistor 10.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A color light-emitting structure is characterized by comprising a transistor and an electroluminescent layer, wherein the electroluminescent layer is arranged on the surface of the transistor and drives the electroluminescent layer to emit light;
the transistor comprises a conductive layer, wherein the conductive layer comprises a source region, a drain region and a channel region positioned between the source region and the drain region, and the electroluminescent layer is arranged on the surface of the source region and/or the drain region of the conductive layer.
2. The structure of claim 1, wherein the electroluminescent layer is made of electroluminescent inorganic semiconductor quantum dot material, organic electroluminescent material, electroluminescent quantum dot material with charge ionized in solution, or composite material formed by organic electroluminescent material combined with photoluminescent inorganic semiconductor quantum dot material;
or the electroluminescent layer comprises an organic electroluminescent material layer and a quantum dot material layer which are sequentially stacked, and the organic electroluminescent material layer is arranged on the surface of the source region and/or the drain region of the conducting layer.
3. The color light emitting structure of claim 2, wherein the electroluminescent inorganic semiconductor quantum dot material is selected from one or more of group IIB-VIA semiconductor quantum dot nanoparticles and group IB-IIIA-VIA semiconductor quantum dot nanoparticles;
the organic electroluminescent material is an organic micromolecule electroluminescent material or an organic high molecular polymer electroluminescent material;
the electroluminescent quantum dot material with ionized charges in the solution comprises a quantum dot core and a ligand shell coating the quantum dot core, wherein the ligand shell has ionized charges in the solution;
the photoluminescent inorganic semiconductor quantum dot material is selected from group IIIA-VA semiconductor quantum dot nanoparticles.
4. The color light emitting structure according to any one of claims 1 to 3, wherein the transistor is a consumable or enhanced PNP silicon-based transistor, a consumable or enhanced PNP germanium-based transistor, a consumable or enhanced PNP compound semiconductor transistor, a consumable or enhanced NPN silicon-based transistor, a consumable or enhanced NPN germanium-based transistor, a consumable or enhanced NPN compound semiconductor transistor, a consumable or enhanced PPN silicon-based transistor, a consumable or enhanced PPN germanium-based transistor, or a consumable or enhanced PPN compound semiconductor transistor.
5. The structure of claim 4, wherein the electroluminescent layer on the source and drain regions displays the same color or different colors when the electroluminescent layer is disposed on the surface of the source and drain regions of the conductive layer.
6. A preparation method of a color light-emitting structure is characterized by comprising the following steps:
forming a conductive layer of a transistor, the conductive layer comprising a source region, a drain region, and a channel region between the source region and the drain region;
and forming an electroluminescent layer on the surface of the source region and/or the drain region respectively.
7. The method according to claim 6, wherein the electroluminescent layer is formed on the surface of the source region and/or the drain region by spin coating, printing or electrodeposition.
8. A light emitting module comprising the color light emitting structure according to any one of claims 1 to 5.
9. The illumination module as claimed in claim 8, comprising a driving panel, wherein the driving panel comprises a substrate and a transistor array disposed on the substrate, the transistor array comprises a plurality of transistors in the color illumination structure, and the electroluminescent layer is disposed on the surface of the source region and/or the drain region of the conductive layer of the transistor.
10. The preparation method of the light-emitting module is characterized by comprising the following steps of:
providing a substrate according to claim 9, forming the transistor array on the substrate and exposing the source region and/or the drain region surfaces;
and forming the electroluminescent layer on the surface of the exposed source region and/or the exposed drain region.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102779830A (en) * | 2012-06-12 | 2012-11-14 | 南京中电熊猫液晶显示科技有限公司 | Metallic oxide display device and manufacturing method thereof |
| CN103489894A (en) * | 2013-10-09 | 2014-01-01 | 合肥京东方光电科技有限公司 | Active matrix organic electroluminescence display part and display device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102779830A (en) * | 2012-06-12 | 2012-11-14 | 南京中电熊猫液晶显示科技有限公司 | Metallic oxide display device and manufacturing method thereof |
| CN103489894A (en) * | 2013-10-09 | 2014-01-01 | 合肥京东方光电科技有限公司 | Active matrix organic electroluminescence display part and display device and manufacturing method thereof |
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