CN114107903A - Optical PUF (physical unclonable function), and preparation method and application thereof - Google Patents
Optical PUF (physical unclonable function), and preparation method and application thereof Download PDFInfo
- Publication number
- CN114107903A CN114107903A CN202111339442.5A CN202111339442A CN114107903A CN 114107903 A CN114107903 A CN 114107903A CN 202111339442 A CN202111339442 A CN 202111339442A CN 114107903 A CN114107903 A CN 114107903A
- Authority
- CN
- China
- Prior art keywords
- metal
- layer
- puf
- core
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Abstract
The invention relates to the technical field of PUF-based security, in particular to an optical PUF, and a preparation method and application thereof. The invention provides a preparation method of an optical PUF, which comprises the following steps: A) depositing a first metal on a substrate to obtain a first metal layer; B) depositing a second metal on the first metal layer to obtain a second metal layer; C) annealing the composite layer obtained in the step B) to form core-shell nano particles, thereby obtaining the optical PUF. By introducing and adopting a rapid thermal annealing method, the core-shell nano particles can be conveniently generated on metal electrodes of different semiconductors at random, can be seamlessly compatible with a microelectronic technology, and have no negative influence on the electrical property of the micro-electronic technology. The nano particles formed by the method have controllable density, good mechanical stability and thermal stability, higher randomness and complexity, and can be used as anti-counterfeit labels of electronic chips or electronic devices.
Description
Technical Field
The invention relates to the technical field of PUF-based security, in particular to an optical PUF, and a preparation method and application thereof.
Background
The development of indestructible security tags is critical to ensure trustworthiness and traceable security of electronic products, preventing devices from being replaced, modified, tampered with, or hacked during the design lifecycle. But standardized mass production brings a lot of indistinguishable, each chip requires a unique identifier or label to establish traceability and trustworthiness.
At present, the commonly used preparation method of the metal nanoparticles is a colloidal metal nanoparticle method, the prepared nanoparticles have the defects of poor adhesion, poor mechanical stability and the like in distribution, other nanometer preparation methods such as a photoetching technology, a nanometer printing technology and the like have expensive preparation and complex process, a repeatable process is adopted, and the requirements of disordered random optical PUF are not met. Chinese patent CN106119804A discloses a method for self-assembling nanoparticles based on a rapid annealing metal film, which adopts a single-layer metal film to perform a rapid annealing method, and the device adopts a combination of water cooling and air cooling, and forms nanoparticles under the protection of nitrogen or argon, but the nanoparticles formed by the method have simple structure and uniform size, and are used in the application of optical PUFs based on random nanoparticle structures, and the randomness and complexity are insufficient.
Disclosure of Invention
In view of the above, the technical problem to be solved by the present invention is to provide an optical PUF, a method for manufacturing the same, and an application of the same.
The invention provides a preparation method of an optical PUF, which comprises the following steps:
A) depositing a first metal on a substrate to obtain a first metal layer;
B) depositing a second metal on the first metal layer to obtain a second metal layer;
C) annealing the composite layer obtained in the step B) to form core-shell nano particles, thereby obtaining the optical PUF.
Preferably, in step a), the material of the substrate includes at least one of silicon, gallium arsenide, aluminum gallium nitride, zinc oxide, gallium oxide, indium phosphide and silicon carbide;
the thickness of the substrate is 100-1000 μm.
Preferably, in step a), the first metal includes one of titanium, copper, iron, aluminum, germanium and platinum;
the thickness of the first metal layer is 1-30 nm;
the deposition method comprises magnetron sputtering.
Preferably, in step B), the second metal includes one of gold, silver and copper;
the thickness of the second metal layer is 2-50 nm;
the deposition method comprises magnetron sputtering.
Preferably, in the step C), the annealing temperature is 400-800 ℃ and the time is 10 s-20 min.
Preferably, in the step C), in the core-shell nanoparticles, the shell layer material is a first metal or an oxide of the first metal;
the material of the nuclear layer is a second metal;
the particle size of the core-shell nano particles is 1-800 nm.
Preferably, the step C) further includes, after the core-shell nanoparticles are formed: depositing a third metal;
the third metal comprises one of titanium, iron, aluminum, germanium, platinum, gold, silver, and copper.
Preferably, before depositing the third metal, the method further comprises: passivating and opening windows.
The invention also provides an optical PUF prepared by the preparation method.
The invention also provides an application of the optical PUF as an anti-counterfeit label or a nano fingerprint of an electronic chip or an electronic device.
The invention provides a preparation method of an optical PUF, which comprises the following steps: A) depositing a first metal on a substrate to obtain a first metal layer; B) depositing a second metal on the first metal layer to obtain a second metal layer; C) annealing the composite layer obtained in the step B) to form core-shell nano particles, thereby obtaining the optical PUF. By introducing and adopting a rapid thermal annealing method, the core-shell nano particles can be conveniently generated on metal electrodes of different semiconductors at random, can be seamlessly compatible with a microelectronic technology, and have no negative influence on the electrical property of the micro-electronic technology. The nano particles formed by the method have controllable density, good mechanical stability and thermal stability, and can be used as anti-counterfeit labels of electronic chips or electronic devices. Meanwhile, the invention adopts a double-layer metal film annealing method to form the metal nano-particles with the core-shell structure, has higher randomness and complexity, and is an optical PUF which is more difficult to copy and crack.
Drawings
Fig. 1 is a schematic structural diagram of an optical PUF provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an optical PUF according to another embodiment of the present invention;
fig. 3 is a graph of similarity test results for the same optical PUF and different optical PUFs.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a preparation method of an optical PUF, which comprises the following steps:
A) depositing a first metal on a substrate to obtain a first metal layer;
B) depositing a second metal on the first metal layer to obtain a second metal layer;
C) annealing the composite layer obtained in the step B) to form core-shell nano particles, thereby obtaining the optical PUF.
The invention firstly deposits a first metal on a substrate to obtain a first metal layer.
In some embodiments of the present invention, the substrate comprises at least one of silicon, gallium arsenide, aluminum gallium nitride, zinc oxide, gallium oxide, indium phosphide, and silicon carbide.
In certain embodiments of the present invention, the substrate is composited on a substrate. The substrate may be sapphire. The thickness of the substrate is not particularly limited in the present invention.
In some embodiments of the present invention, the base is gallium nitride, and the directions from the substrate to the substrate sequentially include:
a 600nm n-GaN layer, a 200nm unintentionally doped i-GaN layer, an 80nm p-GaN layer, and a 20nm p + GaN layer.
In some embodiments of the present invention, the base is gallium arsenide, and the following are included in sequence from the direction close to the substrate to the direction away from the substrate:
a 600nm n-GaAs layer, a 200nm unintentionally doped i-GaAs layer, and a 100nm p-GaAs layer.
In some embodiments of the present invention, the substrate has a thickness of 100 to 1000 μm. In certain embodiments, the substrate has a thickness of 920 μm or 900 μm.
In certain embodiments of the present invention, the first metal comprises one of titanium, copper, iron, aluminum, germanium, and platinum.
In some embodiments of the present invention, the thickness of the first metal layer is 1 to 30 nm.
In certain embodiments of the invention, the method of deposition comprises magnetron sputtering.
And after the first metal layer is obtained, depositing a second metal on the first metal layer to obtain a second metal layer.
In certain embodiments of the present invention, the second metal comprises one of gold, silver, and copper.
In some embodiments of the present invention, the thickness of the second metal layer is 2 to 50 nm.
In certain embodiments of the invention, the method of deposition comprises magnetron sputtering.
And after a second metal layer is obtained, annealing the composite layer obtained in the step B) to form core-shell nano particles, thereby obtaining the optical PUF.
In some embodiments of the invention, the annealing temperature is 400-800 ℃ and the annealing time is 10 s-20 min. In certain embodiments, the annealing is at a temperature of 600 ℃ or 620 ℃ for a time of 3min or 2 min.
In certain embodiments of the present invention, the annealing atmosphere comprises at least one of oxygen, nitrogen, and argon. In certain embodiments, the annealing atmosphere comprises oxygen and nitrogen in a volume ratio of 1: 4 to 5. In certain embodiments, the volume ratio of oxygen to nitrogen is 1: 5 or 1: 4.
and after the annealing is finished, forming the core-shell nano particles.
In some embodiments of the present invention, in the core-shell nanoparticle, the shell material is a first metal or an oxide of the first metal. The core layer is made of a second metal.
In some embodiments of the present invention, the core-shell nanoparticles have a particle size of 1 to 800 nm.
In some embodiments of the invention, the core-shell nanoparticles formed by rapid annealing are randomly distributed and have high mechanical stability.
In certain embodiments of the present invention, after forming the core-shell nanoparticles, in order to increase ohmic contact, the method further comprises: and depositing a third metal to form a third metal layer. The third metal comprises one of titanium, iron, aluminum, germanium, platinum, gold, silver, and copper.
In certain embodiments of the invention, the method of deposition comprises magnetron sputtering.
In some embodiments of the present invention, the thickness of the third metal layer is 100 to 2000 nm. In some embodiments, the thickness of the third metal layer is 300 nm.
In some embodiments of the invention, before depositing the third metal, the method further comprises: passivating and opening windows.
In certain embodiments of the present invention, the method of passivating comprises:
deposition of SiO2And a passivation layer.
In certain embodiments of the present invention, the method of deposition comprises Plasma Enhanced Chemical Vapor Deposition (PECVD).
In certain embodiments of the invention, the SiO2The thickness of the passivation layer was 300 nm.
The source of the above-mentioned raw materials is not particularly limited, and the raw materials may be generally commercially available.
The invention also provides an optical PUF prepared by the preparation method.
In some embodiments of the invention, the electrode optical PUF comprises:
a substrate;
a first metal layer attached to the substrate;
a second metal layer attached to the first metal layer;
core-shell nanoparticles attached to the second metal layer;
in the core-shell nano-particles, the shell layer is made of a first metal or an oxide of the first metal;
the core layer is made of a second metal.
Structure as shown in fig. 1, fig. 1 is a schematic structural diagram of an optical PUF according to an embodiment of the present invention. Wherein, 1-1 is a substrate of the optical PUF, 1-2 is a first metal layer of the optical PUF, 1-3 is a second metal layer of the optical PUF, 1-4 is core-shell nanoparticles, 1-4-1 is a core layer of the core-shell nanoparticles, and 1-4-2 is a shell layer of the core-shell nanoparticles.
In certain embodiments of the present invention, the core-shell nanoparticles on the second metal layer are randomly distributed.
In some embodiments of the invention, the electrode optical PUF comprises:
a substrate;
core-shell nanoparticles attached to the surface of the substrate portion;
a first metal layer attached to the remaining surface of the substrate;
in the core-shell nano particles, the shell layer is made of an oxide of a first metal;
the core layer is made of a second metal.
Structure as shown in fig. 2, fig. 2 is a schematic structural diagram of an optical PUF according to another embodiment of the present invention. Wherein 2-1 is a substrate of the optical PUF, 2-2 is a first metal layer of the optical PUF, 2-3 is a core layer of the core-shell nanoparticles, and 2-4 is a shell layer of the core-shell nanoparticles; and 2-5 is a third metal layer.
In certain embodiments of the present invention, the core-shell nanoparticles of the substrate surface are randomly distributed.
In some embodiments of the invention, the electrode optical PUF further comprises: a third metal layer; the third metal layer is attached to the core-shell nanoparticles and the first metal layer.
The invention also provides an application of the optical PUF as an anti-counterfeit label of an electronic chip or an electronic device.
This patent has adopted the mode that double-deck film annealing formed the nucleocapsid nanometer granule, has obtained the optics PUF structure at random and have mechanical stability. Core-shell nanoparticles distributed randomly are conveniently generated on metal electrodes of different semiconductors (silicon, gallium arsenide, aluminum gallium nitride, zinc oxide, gallium oxide, indium phosphide or silicon carbide), and an unclonable speckle pattern can be generated by utilizing the uncertain random process, so that the core-shell nanoparticles can be used as inherent nano fingerprints of electronic devices.
In the invention, the density and the appearance of the core-shell nano particles can be effectively regulated and controlled through annealing conditions, so that the coding capacity of the PUFs can be regulated according to requirements, and a good anti-counterfeit label solution is provided for microelectronic chips and devices. The invention thus claims the use of an optical PUF as described above as an anti-counterfeit label for an electronic chip or device.
In the present invention, it is required that the nanoparticles form more stable adhesion with the semiconductor substrate, and thus, it is further limited to use one of metals of titanium, copper, iron, aluminum, germanium and platinum to enhance the adhesion.
The principle of the invention is not the physical process of solid dehumidification, but also chemical reactions. And (3) rapidly annealing in an oxygen atmosphere to enable the adhesion metal to move upwards relative to the second layer of metal, wherein the adhesion metal can also react with oxygen in the movement, for example, titanium reacts with oxygen to form titanium dioxide, and a nanoparticle core-shell structure is formed. As an optical PUF, the complexity of the PUF can be improved by regulating the size of particles and the thickness of a shell layer, and the PUF has higher PUF random property.
By introducing and adopting a rapid thermal annealing method, the core-shell nano particles can be randomly and conveniently generated on metal electrodes of different semiconductors (Si, GaAs and GaN), can be seamlessly compatible with a microelectronic technology, and has no negative influence on the electrical property of the micro-electronic technology. The nano particles formed by the method have controllable density, good mechanical stability and thermal stability, and a feasible solution is provided for credible and traceable electrons.
In order to further illustrate the present invention, the following detailed description of an optical PUF, a method for manufacturing the same, and applications thereof are provided in conjunction with the following examples, which should not be construed as limiting the scope of the present invention.
The starting materials used in the following examples are all commercially available.
Example 1
Preparing an optical PUF (physical unclonable function) of an electrode of a GaN APD (avalanche photo diode) device:
1) epitaxially growing a GaN p-i-n structure on a sapphire substrate by MOCVD, wherein the GaN p-i-n structure comprises a 600nm n-GaN layer, a 200nm unintentionally doped i-GaN layer, a 100nm p-GaN layer and a 20nm p + GaN layer, so as to promote the formation of ohmic contact and obtain a substrate with the thickness of 500 microns in total and containing sapphire;
2) depositing a 2nm titanium material on the p-GaN layer by electron beam evaporation by adopting a magnetron sputtering method to obtain a first metal layer;
3) depositing an 8nm gold material on the first metal layer by a magnetron sputtering method to obtain a second metal layer;
4) and carrying out rapid annealing at the annealing temperature of 600 ℃ for 3min, wherein the annealing atmosphere comprises oxygen and nitrogen, and the volume ratio of the oxygen to the nitrogen is 1: 5; forming core-shell nanoparticles; the structure is shown in figure 1;
5) plasma Enhanced Chemical Vapor Deposition (PECVD) of a layer of 300nm SiO2Passivating the layer and opening the window;
6) and depositing 300nm gold by adopting a magnetron sputtering method to obtain a third metal layer for forming an ohmic contact electrode with good performance.
Using an optical microscope (
MX51), halogen lamps, and CCDs (2448 × 1920 pixels) measure the optical response of the PUF.
This example takes multiple pictures of the same optical PUF produced using the method of example 1, and measures the similarity between them, defined as the on-chip similarity. Meanwhile, 100 different optical PUFs (the same optical PUF refers to a picture with the same selected area on the same electrode, that is, the contained micro-patterns are completely the same, and the different area positions of the same electrode or the micro-patterns in different electrodes are completely different, and therefore, the different PUFs are regarded as different PUFs) are also taken, and the similarity is measured and defined as the inter-chip similarity, and the similarity test result is shown in fig. 3. Fig. 3 is a graph of similarity test results for the same optical PUF and different optical PUFs. As can be seen from fig. 3, it is very clear whether the same optical PUF or a different optical PUF can be distinguished.
The high-temperature robustness of the obtained optical PUF is tested, the similarity between the two optical PUFs at different temperatures is compared, and when the temperature is lower than 400 ℃, the similarity of the optical PUFs at different temperatures is larger than 0.55 and is far larger than the similarity of the different optical PUFs by 0.05, so that the optical PUFs can be regarded as the same PUF, namely, good thermal stability is shown.
When the optical PUF in embodiment 1 of the present invention is subjected to an ultrasonic and tape tearing experiment, through comparison, nanoparticles on the optical PUF do not change before and after the ultrasonic and before and after the tape tearing, and excellent mechanical stability is exhibited.
Example 2
Preparing an optical PUF (physical unclonable function) of a GaAs device electrode:
1) epitaxially growing a GaAs p-i-n structure on a sapphire substrate by MOCVD, wherein the structure comprises a 600nm n-GaAs layer, a 200nm unintentionally doped i-GaAs layer and a 100nm p-GaAs layer so as to promote ohmic contact to form a substrate with the thickness of 600 microns and the sapphire substrate;
2) depositing a 5nm titanium material on the p-GaAs layer by adopting a magnetron sputtering method to obtain a first metal layer;
3) depositing a 10nm gold material on the first metal layer through magnetron sputtering to obtain a second metal layer;
4) and carrying out rapid annealing at the annealing temperature of 620 ℃ for 2min, wherein the annealing atmosphere comprises oxygen and nitrogen, and the volume ratio of the oxygen to the nitrogen is 1: 4; forming core-shell nanoparticles;
5) and depositing 300nm gold by adopting a magnetron sputtering method to obtain a third metal layer for forming an ohmic contact electrode with good performance. Meanwhile, the core-shell nanoparticles are embedded in the post-evaporated gold film, but the shapes of the nanoparticles are still repeatedly etched on the surface to form the surface of the metal nanoparticles. The structure is shown in fig. 2.
Using an optical microscope (
MX51), halogen lamps, and CCDs (2448 × 1920 pixels) measure the optical response of the PUF.
The embodiment also tests the high-temperature robustness of the obtained optical PUF, and compares the similarity between the two optical PUFs at different temperatures, and the experimental result shows that the similarity of the optical PUFs at different temperatures is more than 0.7 and is far greater than the similarity of 0.1 between the different optical PUFs at a temperature below 420 ℃, so that the optical PUFs can be regarded as the same PUF, namely, the good thermal stability is shown.
When the optical PUF in embodiment 2 of the present invention is subjected to an ultrasonic and tape tearing experiment, through comparison, nanoparticles on the optical PUF do not change before and after the ultrasonic and before and after the tape tearing, and excellent mechanical stability is exhibited.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method of manufacturing an optical PUF comprising the steps of:
A) depositing a first metal on a substrate to obtain a first metal layer;
B) depositing a second metal on the first metal layer to obtain a second metal layer;
C) annealing the composite layer obtained in the step B) to form core-shell nano particles, thereby obtaining the optical PUF.
2. The method according to claim 1, wherein in step a), the substrate is made of at least one material selected from the group consisting of silicon, gallium arsenide, aluminum gallium nitride, zinc oxide, gallium oxide, indium phosphide, and silicon carbide;
the thickness of the substrate is 100-1000 μm.
3. The method according to claim 1, wherein in step a), the first metal comprises one of titanium, copper, iron, aluminum, germanium, and platinum;
the thickness of the first metal layer is 1-30 nm;
the deposition method comprises magnetron sputtering.
4. The method according to claim 1, wherein in step B), the second metal includes one of gold, silver, and copper;
the thickness of the second metal layer is 2-50 nm;
the deposition method comprises magnetron sputtering.
5. The preparation method according to claim 1, wherein in the step C), the annealing temperature is 400-800 ℃ and the annealing time is 10 s-20 min.
6. The preparation method according to claim 1, wherein in the step C), the shell layer of the core-shell nanoparticle is made of a first metal or an oxide of the first metal;
the material of the nuclear layer is a second metal;
the particle size of the core-shell nano particles is 1-800 nm.
7. The method according to claim 1, wherein the step C) further comprises, after the core-shell nanoparticles are formed: depositing a third metal;
the third metal comprises one of titanium, iron, aluminum, germanium, platinum, gold, silver, and copper.
8. The method of claim 7, wherein prior to depositing the third metal, further comprising: passivating and opening windows.
9. An optical PUF produced by the production method according to any one of claims 1 to 8.
10. Use of an optical PUF according to claim 9 as an anti-counterfeit label or nano-fingerprint for an electronic chip or device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111339442.5A CN114107903A (en) | 2021-11-12 | 2021-11-12 | Optical PUF (physical unclonable function), and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111339442.5A CN114107903A (en) | 2021-11-12 | 2021-11-12 | Optical PUF (physical unclonable function), and preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114107903A true CN114107903A (en) | 2022-03-01 |
Family
ID=80379164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111339442.5A Pending CN114107903A (en) | 2021-11-12 | 2021-11-12 | Optical PUF (physical unclonable function), and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114107903A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114564171A (en) * | 2022-03-04 | 2022-05-31 | 中国工程物理研究院电子工程研究所 | True random number generation method, device, electronic equipment, storage medium and system |
| CN114863790A (en) * | 2022-04-13 | 2022-08-05 | 四川大学 | Chiral nano anti-counterfeit label |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102265395A (en) * | 2008-12-29 | 2011-11-30 | Nxp股份有限公司 | Physical structure for use in physical unclonable function |
| CN103563106A (en) * | 2011-05-31 | 2014-02-05 | 纳米技术有限公司 | Semiconductor nanoparticle-containing materials and light emitting devices incorporating the same |
| CN104659020A (en) * | 2013-11-21 | 2015-05-27 | 恩智浦有限公司 | Electronic device incorporating a randomized interconnection layer |
| CN105404912A (en) * | 2015-12-19 | 2016-03-16 | 中国工程物理研究院电子工程研究所 | Reconstructive peeping prevention optical PUF |
| CN105515779A (en) * | 2015-12-31 | 2016-04-20 | 中国工程物理研究院电子工程研究所 | Quantum security authentication system based on optical PUF |
| CN106119804A (en) * | 2016-08-22 | 2016-11-16 | 电子科技大学 | A kind of method based on short annealing metallic film self-assembled nanometer particle |
| EP3418936A1 (en) * | 2017-06-21 | 2018-12-26 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for securing an integrated circuit during the production thereof using random connecting trakcs |
| CN109291674A (en) * | 2018-10-10 | 2019-02-01 | 福州大学 | A kind of not reproducible antifalsification label and preparation method thereof based on inkjet printing |
-
2021
- 2021-11-12 CN CN202111339442.5A patent/CN114107903A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102265395A (en) * | 2008-12-29 | 2011-11-30 | Nxp股份有限公司 | Physical structure for use in physical unclonable function |
| CN103563106A (en) * | 2011-05-31 | 2014-02-05 | 纳米技术有限公司 | Semiconductor nanoparticle-containing materials and light emitting devices incorporating the same |
| CN104659020A (en) * | 2013-11-21 | 2015-05-27 | 恩智浦有限公司 | Electronic device incorporating a randomized interconnection layer |
| CN105404912A (en) * | 2015-12-19 | 2016-03-16 | 中国工程物理研究院电子工程研究所 | Reconstructive peeping prevention optical PUF |
| CN105515779A (en) * | 2015-12-31 | 2016-04-20 | 中国工程物理研究院电子工程研究所 | Quantum security authentication system based on optical PUF |
| CN106119804A (en) * | 2016-08-22 | 2016-11-16 | 电子科技大学 | A kind of method based on short annealing metallic film self-assembled nanometer particle |
| EP3418936A1 (en) * | 2017-06-21 | 2018-12-26 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for securing an integrated circuit during the production thereof using random connecting trakcs |
| CN109291674A (en) * | 2018-10-10 | 2019-02-01 | 福州大学 | A kind of not reproducible antifalsification label and preparation method thereof based on inkjet printing |
Non-Patent Citations (1)
| Title |
|---|
| QIAN LI，ET AL.: ""Physical U nclonable Anticou nterfeiti ng Electrodes Enabled by Spontaneously Formed Plasmonic Core-Shell Nanoparticles for Traceable Electronics"", 《ADVANCED FUNCTIONAL MATERIALS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114564171A (en) * | 2022-03-04 | 2022-05-31 | 中国工程物理研究院电子工程研究所 | True random number generation method, device, electronic equipment, storage medium and system |
| CN114564171B (en) * | 2022-03-04 | 2023-09-12 | 中国工程物理研究院电子工程研究所 | True random number generation method, true random number generation device, electronic equipment, storage medium and true random number generation system |
| CN114863790A (en) * | 2022-04-13 | 2022-08-05 | 四川大学 | Chiral nano anti-counterfeit label |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114107903A (en) | Optical PUF (physical unclonable function), and preparation method and application thereof | |
| Liu et al. | Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography | |
| TWI711187B (en) | Nanomaterials | |
| US8237175B2 (en) | Optical devices featuring textured semiconductor layers | |
| US9202975B2 (en) | Light emitting diode including graphene layer | |
| US9190565B2 (en) | Light emitting diode | |
| KR101361630B1 (en) | Method for production a radiation-emitting semi-conductor chip | |
| Jung et al. | Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost‐Competitive Light Emitters | |
| US20030222263A1 (en) | High-efficiency light-emitting diodes | |
| Li et al. | Physical unclonable anticounterfeiting electrodes enabled by spontaneously formed plasmonic core–shell nanoparticles for traceable electronics | |
| JP2007533164A (en) | Optical device featuring a textured semiconductor layer | |
| Wei et al. | Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands | |
| US9337388B2 (en) | Method for producing a semiconductor layer sequence, radiation-emitting semiconductor chip and optoelectronic component | |
| TW201225171A (en) | Method of manufacturing a semiconductor device | |
| TW201300310A (en) | Fabrication method of epitaxy substrate with nano patterns and light emitting diode | |
| US20140306256A1 (en) | Light emitting diode | |
| Wang et al. | Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures | |
| Polyakov et al. | III‐Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes | |
| Huang et al. | Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands | |
| Ansah-Antwi et al. | Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si (100) substrates | |
| KR102504115B1 (en) | Semiconductor heterostructures with a wurtzite-type structure on a ZnO substrate | |
| Tarief Elshafiey et al. | GaN/InGaN Blue Light‐Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam‐Assisted Deposition | |
| Park et al. | A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells | |
| Li et al. | Enhanced performance of large‐area vertical light‐emitting diodes treated by laser irradiation | |
| Kim et al. | High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |