CN114102272A - Ion beam polishing method for high-precision C-direction sapphire window - Google Patents
Ion beam polishing method for high-precision C-direction sapphire window Download PDFInfo
- Publication number
- CN114102272A CN114102272A CN202111465478.8A CN202111465478A CN114102272A CN 114102272 A CN114102272 A CN 114102272A CN 202111465478 A CN202111465478 A CN 202111465478A CN 114102272 A CN114102272 A CN 114102272A
- Authority
- CN
- China
- Prior art keywords
- sapphire window
- sample
- ion beam
- less
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
Abstract
The invention discloses an ion beam polishing method of a high-precision C-direction sapphire window, which comprises the steps of processing a C-direction sapphire blank molding material by using a ring polishing machine to obtain a C-direction sapphire window sample; measuring the transmission wavefront by adopting a laser interferometer; cleaning, back protection and clamping of the C-direction sapphire window sample piece are completed in the clean room; then the sample is hung on an ion beam polishing machine auxiliary chamber sample piece tool to close the auxiliary chamber, and then the sample is dragged to the specified position of the main chamber through a magnetic connecting rod and clamped; starting an ion source of the ion beam polishing machine, and waiting for the ion source to be stable; obtaining residence time and NC machining codes of the sapphire window sample piece through simulation calculation of the transmission wavefront shape of the sample piece; performing rough machining by adopting high-energy wide-beam ion beams; performing finish machining by adopting low-energy narrow-beam ion beams; and taking out the sample, measuring the transmission wavefront of the sample by using a laser interferometer after the temperature of the sample is stable, and obtaining a C-direction sapphire window sample with a high-precision surface shape after confirmation.
Description
Technical Field
The invention belongs to the technical field of optical manufacturing, and particularly relates to an ion beam polishing method for a high-precision C-direction sapphire window.
Background
The sapphire material is an alumina single crystal with extremely high purity, the main component of the sapphire material is alpha-Al 2O3, and the sapphire material has a series of excellent properties: in the aspect of optics, the sapphire keeps very high transmittance in three bands of ultraviolet, visible light and infrared; meanwhile, the sapphire infrared window also has good mechanical property, extremely high thermal shock resistance, very high hardness and very excellent abrasion resistance. More expensively, the chemical properties of sapphire materials are also very stable and insoluble in common acidic and alkaline solutions. Because sapphire has good physicochemical properties, an infrared window made of sapphire has better performance than infrared windows made of other materials, and is one of the materials commonly used for optical windows at present.
The traditional polishing method is a method commonly adopted in the field of optical processing at present for processing sapphire windows, has the advantages of good surface smoothness of polished sapphire crystals, low processing cost and the like, but has obvious defects, such as long processing period, low processing efficiency, high experience requirements of processing personnel, scratch of the sapphire surface caused by crystallization of polishing solution in the processing process and the like.
Compared with the traditional polishing method, the ion beam polishing method has the advantages that (1) a highly stable Gaussian removal function can realize the highly deterministic removal of materials; secondly, edge effect and stress are avoided by non-contact processing; material removal is realized by physical sputtering of ions, the influence of polishing solution and grinding materials in the traditional polishing process is avoided, polishing impurity pollution cannot be introduced in the processing process, and low-defect processing can be realized.
The technical problem of ion beam machining C to sapphire window lies in: firstly, researching process parameters from ion beam processing C to a sapphire window (the process parameters relate to processing distance, gas flow, working vacuum degree, radio frequency power, beam voltage, accelerating voltage, neutralizing voltage and the like); simulating and calculating residence time according to the surface shape data of the C-direction sapphire window and generating an NC code; and thirdly, calculating the convergence rate and the iterative algorithm times of sapphire processing under different FWHM ion beam grids according to the surface shape data of the C-direction sapphire window.
Disclosure of Invention
The invention aims to provide a non-contact ion beam polishing method capable of quickly and efficiently obtaining an optical-level high-precision sapphire window.
In order to achieve the purpose, the technical scheme is as follows:
an ion beam polishing method of a high-precision C-direction sapphire window comprises the following steps:
(1) processing the C-direction sapphire blank forming material by using a ring polishing machine to obtain a C-direction sapphire window sample;
(2) measuring the transmission wavefront of the C-direction sapphire window sample by adopting a laser interferometer;
(3) cleaning, back protection and clamping of the C-direction sapphire window sample piece are completed in the clean room; then the sample is hung on an ion beam polishing machine auxiliary chamber sample piece tool to close the auxiliary chamber, and then the sample is dragged to the designated position of the main chamber through a magnetic connecting rod and clamped;
(4) starting an ion source of the ion beam polishing machine, and waiting for the ion source to be stable;
(5) obtaining residence time and NC machining codes of the sapphire window sample piece through simulation calculation of the transmission wavefront shape of the sample piece;
(6) performing rough machining by adopting high-energy wide-beam ion beams;
(7) performing finish machining by adopting low-energy narrow-beam ion beams;
(8) and taking out the C-direction sapphire window sample, measuring the transmission wavefront of the sample by using a laser interferometer after the temperature of the sample is stable, and obtaining the C-direction sapphire window sample with a high-precision surface shape after confirmation.
According to the scheme, the step (1) comprises the following steps:
A. controlling the ring polishing technological parameters of the ring polishing machine: the rotating speed of the large disc: 2rpm, corrected disc rotation speed: 2.5rpm, workpiece ring rotation speed: 3 rpm;
B. roughly polishing the sand surface by using diamond liquid with the diameter of 5 mu m until the sand surface is completely removed;
C. rough polishing is carried out by using diamond liquid with the particle size of 3 mu m until N is less than or equal to 3, delta N is less than or equal to 0.5 (within the caliber of phi 150 mm) and the parallel difference is less than or equal to 15';
D. polishing with 1 μm aluminum oxide liquid until PV is less than or equal to 2 λ, RMS is less than or equal to 1 λ (λ is 632.8nm), and parallelism difference is less than or equal to 6 ″.
According to the scheme, the step (2) comprises the following steps:
A. adjusting background stripes of the laser interferometer to be zero stripes, wherein the mathematical expression of the parallel difference calculation is as follows:
wherein n is the refractive index of the optical element; the number of interference fringes within the range of m-length b; b, the aperture of the optical element to be measured; lambda-the wavelength of the light source used by the laser interferometer;
B. changing the refractive index n of the laser interferometer to be the refractive index of the sapphire window sample piece in the C direction;
C. fixing a C-direction sapphire window sample piece between a TF mirror and an RF mirror of a laser interferometer;
D. and after making a mask on the laser interferometer detection software, clicking to measure to obtain a C-direction sapphire window sample transmission wavefront DAT surface shape data file.
According to the scheme, the step (3) comprises the following steps:
A. cleaning a sample piece of the C-direction sapphire window by acetone in the clean bench;
B. c, attaching a high-temperature adhesive tape to the non-processing surface of the sapphire window sample piece to perform back protection treatment;
C. and clamping the C-direction sapphire window sample piece on a part clamping tool of the ion beam polishing machine, then hanging the clamping tool on a conveying trolley, dragging the clamping tool to the appointed position of a main cavity through a magnetic connecting rod, and finally locking the part clamping tool through a locking device.
According to the scheme, the step (4) comprises the following steps:
A. when the vacuum degree of the main cavity is less than 20pa, the mechanical pump is vacuumized and replaced by the molecular pump;
B. when the vacuum degree of the main cavity is less than 20mpa, turning on an ion source RF switch for stabilization for 5-10 min;
C. opening and setting the argon flow to be 10sccm, and carrying out arc starting ignition of the ion source for 5-10 min;
D. and opening the beam voltage, the accelerating voltage and the neutralizer until the ion source is stabilized for more than 30 min.
According to the scheme, the step (5) comprises the following steps:
A. importing a C-direction sapphire window sample transmission wavefront DAT surface shape data file obtained by measurement of a laser interferometer into Metro Pro software for overturning and caliber calibration processing, and then storing the C-direction sapphire window sample transmission wavefront DAT surface shape data file as an XYZ surface shape data file;
B. and (3) taking the XYZ plane data file as an initial plane shape, and simulating by MATLAB software to obtain the processing residence time and NC processing codes of the ion beam polishing machine.
According to the scheme, the step (6) comprises the following steps:
adopting an ion beam grid with FWHM of 16mm to carry out rough machining, wherein the technological parameters are as follows: gas 10sccm, RF 180W, Beam 1200eV, Accelerator 200eV, Neutralizer 100 mA.
According to the scheme, the step (7) comprises the following steps:
adopting an ion beam grid with FWHM of 7mm for finish machining, wherein the process parameters are as follows: gas is 5sccm, RF 80W, Beam is 1000eV, Accelerator is 100eV, Neutralizer is 50 mA.
According to the scheme, the surface shape of the C-direction sapphire window sample obtained in the step (8) is confirmed as follows: within the light-passing caliber, the transmission wavefront PV of the sample piece is less than or equal to 0.5 lambda, within the range of arbitrary phi 150mm, the transmission wavefront PV is less than or equal to lambda/10, the RMS is less than or equal to lambda/50 (lambda is 632.8nm), and the parallel difference is less than or equal to 1'.
Compared with the prior art, the invention has the advantages that:
(1) the method comprises the steps that an ion beam polishing technology is adopted, inert gas is ionized under a high-vacuum environment to generate plasma, the plasma is led out through an ion optical system to form an ion beam, the ion beam carries energy to bombard the surface of a sample piece, the ion beam is in contact with surface atoms and transfers the energy, when the energy of the atoms is higher than the surface constraint energy, the ion beam can be separated from the surface, the removal of materials is realized, and no new pollutant or impurity element is introduced in the process;
(2) obtaining optical-grade sapphire by adopting a polishing machine, combining high-energy wide-beam ion beams to perform rough machining and low-energy narrow-beam ion beams to perform precise machining, and finally polishing the surface of the sapphire to be nano-grade, so that the surface quality of the C-direction sapphire material is greatly improved; the method is particularly suitable for polishing high-precision C-direction sapphire.
Drawings
FIG. 1 is a surface shape detection diagram of a C-direction sapphire window processed by the ring polishing machine in the embodiment;
FIG. 2 is a graph of simulation of ion beam polishing removal function in an example;
FIG. 3 is a full aperture profile inspection map after rough machining of a high energy wide beam ion beam in an embodiment;
FIG. 4 is a full aperture profile inspection diagram after fine machining of the high-energy narrow-beam ion beam in the example;
FIG. 5 is a view showing an inner profile of an effective aperture after ion beam processing in the example;
FIG. 6 is a drawing showing the surface shape inside a bore of phi 150mm after ion beam machining in the embodiment.
Detailed Description
The following examples further illustrate the technical solutions of the present invention, but should not be construed as limiting the scope of the present invention.
The specific embodiment of the invention provides a high-precision C-direction sapphire window ion beam polishing preparation method, which comprises the following steps:
1) polishing the C-direction sapphire blank forming material by using a ring polishing machine until the surface shape precision of the optical surface of the sapphire window meets the specified surface shape precision manufacturing requirement; the surface shape precision manufacturing specific requirements specified in step (1) in the present embodiment are PV ≦ 2 λ, RMS ≦ 1 λ (λ 632.8nm), and parallelism difference ≦ 6 ″;
2) the method comprises the following steps of measuring the transmission wavefront of a C-direction sapphire window sample by adopting a laser interferometer, wherein fig. 1 is a surface shape detection diagram of the C-direction sapphire window after polishing by a ring polishing machine, the left diagram in the diagram is a surface shape detection interference fringe diagram, the right diagram in the diagram is a surface shape detection two-dimensional diagram, and the initial surface shape is as follows: PV is 0.69002 λ, RMS 0.17144 λ, and the difference in parallelism is 5 ". The method is realized by the following steps:
A. adjusting background stripes of the laser interferometer to be zero stripes, wherein the mathematical expression of the parallel difference calculation is as follows:
wherein n is the refractive index of the optical element; the number of interference fringes within the range of m-length b; b, the aperture of the optical element to be measured; lambda-the wavelength of the light source used by the laser interferometer;
B. changing the refractive index n of the laser interferometer to be the refractive index of the large-caliber C-direction sapphire;
C. fixing the C-direction sapphire between a TF mirror and an RF mirror of a laser interferometer;
D. after mask is made on laser interferometer detection software, clicking and measuring to obtain a C-direction sapphire transmission wavefront DAT surface shape data file;
3) cleaning, back protection and clamping of a C-direction sapphire window sample are completed in the clean room, then the C-direction sapphire window sample is hung on an ion beam polishing machine auxiliary chamber sample tool to close an auxiliary chamber, and then the C-direction sapphire window sample tool is dragged to the appointed position of a main chamber through a magnetic connecting rod and is clamped;
4) starting an ion source of the ion beam polishing machine, waiting for the ion source to be stable, and specifically realizing the following steps:
A. when the vacuum degree of the main cavity is less than 20pa, the mechanical pump is vacuumized and replaced by the molecular pump;
B. when the vacuum degree of the main cavity is less than 20mpa, turning on an ion source RF switch for stabilization for 5-10 min;
C. opening and setting the argon flow to be 10sccm, and carrying out arc starting ignition of the ion source for 5-10 min;
D. and (4) opening the beam voltage, the accelerating voltage and the neutralizer, and processing after the ion source is stabilized for more than 30 min.
5) And (3) calculating the residence time of the sample piece through the simulation of the transmission wavefront surface shape of the sample piece of the C-direction sapphire window obtained in the step (2) to generate an NC machining code, wherein FIG. 2 is a simulation schematic diagram of an ion source removal function, and the removal function is Gaussian and mainly comprises a peak removal rate A and a removal function diameter d. The method is realized by the following steps:
A. importing a C-direction sapphire transmission wavefront DAT surface shape data file obtained by measurement of a laser interferometer into Metro Pro software for overturning and caliber calibration processing, and then storing the C-direction sapphire transmission wavefront DAT surface shape data file as an XYZ surface shape data file;
B. importing a C-direction sapphire transmission wavefront DAT surface shape data file obtained by measurement of a laser interferometer into Metro Pro software for overturning and caliber calibration processing, and then storing the C-direction sapphire transmission wavefront DAT surface shape data file as an XYZ surface shape data file;
C. and (3) taking the XYZ plane data file as an initial plane shape, and simulating by MATLAB software to obtain the processing residence time and NC processing codes of the ion beam polishing machine.
6) The high-energy wide-beam ion beam is adopted for rough machining, fig. 3 is a C-direction sapphire window full-aperture surface shape detection diagram obtained after the high-energy wide-beam ion beam rough machining, the left diagram in the diagram is a surface shape detection interference fringe diagram, the right diagram in the diagram is a surface shape detection two-dimensional diagram, and the surface shape is as follows: PV is 0.42402 lambda, RMS is 0.07611 lambda, and the difference in parallelism is less than or equal to 1'. The method is realized by the following steps:
A. adopting an ion beam grid with FWHM of 16mm to carry out rough machining, wherein the technological parameters are as follows: gas 10sccm, RF 180W, Beam 1200eV, Accelerator 200eV, Neutralizer 100 mA.
7) Adopt low energy narrow beam ion beam to carry out the finish machining, figure 4 is the full bore shape of face of sapphire window of C that obtains after the low energy narrow beam ion beam rough machining surveys the map, and the left side picture is the shape of face and detects the interference fringe picture in the picture, and the right side picture is the shape of face and detects the two-dimensional map in the picture, and its shape of face does: PV is 0.26299 lambda, RMS is 0.03239 lambda, and the difference in parallelism is less than or equal to 1'. The method is realized by the following steps:
A. adopting an ion beam grid with FWHM of 7mm for finish machining, wherein the process parameters are as follows: gas is 5sccm, RF 80W, Beam is 1000eV, Accelerator is 100eV, Neutralizer is 50 mA.
8) And taking out the C-direction sapphire window sample, measuring the transmission wavefront of the C-direction sapphire window sample by using a laser interferometer after the temperature of the C-direction sapphire window sample is stable to obtain the C-direction sapphire window sample with a high-precision surface shape, and if the C-direction sapphire window sample does not reach the requirement, continuously performing finish machining by using a low-energy narrow-beam ion beam. Fig. 5 is a full aperture range internal profile detection diagram of a C-direction sapphire window meeting requirements after low-energy narrow-beam ion beam finish machining, wherein the upper diagram in the diagram is a profile detection interference fringe diagram, the lower diagram in the diagram is a profile detection two-dimensional diagram, and the profile is as follows: PV is 0.19070 λ, RMS 0.03116 λ, and the difference in parallelism is 0.359 ". Fig. 6 is a surface shape detection diagram in the aperture range of C-direction sapphire window Φ 150mm, which meets the requirements after low-energy narrow-beam ion beam finish machining, the upper diagram in the diagram is a surface shape detection interference fringe diagram, the lower diagram in the diagram is a surface shape detection two-dimensional diagram, and the surface shape is as follows: PV is 0.09907 λ, RMS 0.01563 λ, and the difference in parallelism is 0.28 ".
The surface shape of the obtained high-precision C-direction sapphire is as follows: within the light-passing caliber, the transmission wavefront PV of the sample piece is less than or equal to 0.5 lambda, within the range of arbitrary phi 150mm, the transmission wavefront PV is less than or equal to lambda/10, the RMS is less than or equal to lambda/50 (lambda is 632.8nm), and the parallel difference is less than or equal to 1'.
Claims (9)
1. The ion beam polishing method of the high-precision C-direction sapphire window is characterized by comprising the following steps of:
(1) processing the C-direction sapphire blank forming material by using a ring polishing machine to obtain a C-direction sapphire window sample;
(2) measuring the transmission wavefront of the C-direction sapphire window sample by adopting a laser interferometer;
(3) cleaning, back protection and clamping of the C-direction sapphire window sample piece are completed in the clean room; then the sample is hung on an ion beam polishing machine auxiliary chamber sample piece tool to close the auxiliary chamber, and then the sample is dragged to the designated position of the main chamber through a magnetic connecting rod and clamped;
(4) starting an ion source of the ion beam polishing machine, and waiting for the ion source to be stable;
(5) obtaining residence time and NC machining codes of the sapphire window sample piece through simulation calculation of the transmission wavefront shape of the sample piece;
(6) performing rough machining by adopting high-energy wide-beam ion beams;
(7) performing finish machining by adopting low-energy narrow-beam ion beams;
(8) and taking out the C-direction sapphire window sample, measuring the transmission wavefront of the sample by using a laser interferometer after the temperature of the sample is stable, and obtaining the C-direction sapphire window sample with a high-precision surface shape after confirmation.
2. The method of claim 1 wherein step (1) comprises the steps of:
A. controlling the ring polishing technological parameters of the ring polishing machine: the rotating speed of the large disc: 2rpm, corrected disc rotation speed: 2.5rpm, workpiece ring rotation speed: 3 rpm;
B. roughly polishing the sand surface by using diamond liquid with the diameter of 5 mu m until the sand surface is completely removed;
C. rough polishing is carried out by using diamond liquid with the particle size of 3 mu m until N is less than or equal to 3, delta N is less than or equal to 0.5 (within the caliber of phi 150 mm) and the parallel difference is less than or equal to 15';
D. polishing with 1 μm aluminum oxide liquid until PV is less than or equal to 2 λ, RMS is less than or equal to 1 λ (λ is 632.8nm), and parallelism difference is less than or equal to 6 ″.
3. The method of claim 1 wherein step (2) comprises the steps of:
A. adjusting background stripes of the laser interferometer to be zero stripes, wherein the mathematical expression of the parallel difference calculation is as follows:
wherein n is the refractive index of the optical element; the number of interference fringes within the range of m-length b; b, the aperture of the optical element to be measured; lambda-the wavelength of the light source used by the laser interferometer;
B. changing the refractive index n of the laser interferometer to be the refractive index of the sapphire window sample piece in the C direction;
C. fixing a C-direction sapphire window sample piece between a TF mirror and an RF mirror of a laser interferometer;
D. and after making a mask on the laser interferometer detection software, clicking to measure to obtain a C-direction sapphire window sample transmission wavefront DAT surface shape data file.
4. The method of claim 1 wherein step (3) comprises the steps of:
A. cleaning a sample piece of the C-direction sapphire window by acetone in the clean bench;
B. c, attaching a high-temperature adhesive tape to the non-processing surface of the sapphire window sample piece to perform back protection treatment;
C. and clamping the C-direction sapphire window sample piece on a part clamping tool of the ion beam polishing machine, then hanging the clamping tool on a conveying trolley, dragging the clamping tool to the appointed position of a main cavity through a magnetic connecting rod, and finally locking the part clamping tool through a locking device.
5. The method of claim 1 wherein step (4) comprises the steps of:
A. when the vacuum degree of the main cavity is less than 20pa, the mechanical pump is vacuumized and replaced by the molecular pump;
B. when the vacuum degree of the main cavity is less than 20mpa, turning on an ion source RF switch for stabilization for 5-10 min;
C. opening and setting the argon flow to be 10sccm, and carrying out arc starting ignition of the ion source for 5-10 min;
D. and opening the beam voltage, the accelerating voltage and the neutralizer until the ion source is stabilized for more than 30 min.
6. The method of claim 1 wherein step (5) comprises the steps of:
A. importing a C-direction sapphire window sample transmission wavefront DAT surface shape data file obtained by measurement of a laser interferometer into Metro Pro software for overturning and caliber calibration processing, and then storing the C-direction sapphire window sample transmission wavefront DAT surface shape data file as an XYZ surface shape data file;
B. and (3) taking the XYZ plane data file as an initial plane shape, and simulating by MATLAB software to obtain the processing residence time and NC processing codes of the ion beam polishing machine.
7. The method of claim 1 wherein step (6) comprises the steps of:
adopting an ion beam grid with FWHM of 16mm to carry out rough machining, wherein the technological parameters are as follows: gas 10sccm, RF 180W, Beam 1200eV, Accelerator 200eV, Neutralizer 100 mA.
8. The method of claim 1 wherein step (7) comprises the steps of:
adopting an ion beam grid with FWHM of 7mm for finish machining, wherein the process parameters are as follows: gas is 5sccm, RF 80W, Beam is 1000eV, Accelerator is 100eV, Neutralizer is 50 mA.
9. The method of claim 1, wherein the step (8) confirms that the surface shape of the C-sapphire window sample is: within the light-passing caliber, the transmission wavefront PV of the sample piece is less than or equal to 0.5 lambda, within the range of arbitrary phi 150mm, the transmission wavefront PV is less than or equal to lambda/10, the RMS is less than or equal to lambda/50 (lambda is 632.8nm), and the parallel difference is less than or equal to 1'.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111465478.8A CN114102272B (en) | 2021-12-03 | 2021-12-03 | Ion beam polishing method for high-precision C-direction sapphire window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111465478.8A CN114102272B (en) | 2021-12-03 | 2021-12-03 | Ion beam polishing method for high-precision C-direction sapphire window |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114102272A true CN114102272A (en) | 2022-03-01 |
| CN114102272B CN114102272B (en) | 2022-11-04 |
Family
ID=80366015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111465478.8A Active CN114102272B (en) | 2021-12-03 | 2021-12-03 | Ion beam polishing method for high-precision C-direction sapphire window |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114102272B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06328354A (en) * | 1993-05-20 | 1994-11-29 | Canon Inc | Diamond polishing dish and its manufacture |
| US6296740B1 (en) * | 1995-04-24 | 2001-10-02 | Si Diamond Technology, Inc. | Pretreatment process for a surface texturing process |
| CN101234515A (en) * | 2007-01-29 | 2008-08-06 | 周晓光 | Method for cutting simulation artificial diamond |
| TW201430114A (en) * | 2012-11-06 | 2014-08-01 | Sinmat Inc | Smooth diamond surfaces and CMP method for forming |
| CN104029125A (en) * | 2013-03-08 | 2014-09-10 | 鑫晶钻科技股份有限公司 | Sapphire polishing pad dresser and manufacturing method thereof |
| CN109693147A (en) * | 2019-01-24 | 2019-04-30 | 泉州市友腾光电科技有限公司 | A kind of ZNSE lenses polishing technique |
| CN112025417A (en) * | 2020-08-20 | 2020-12-04 | 中国兵器科学研究院宁波分院 | Non-contact ion beam polishing method for surface of optical diamond material |
-
2021
- 2021-12-03 CN CN202111465478.8A patent/CN114102272B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06328354A (en) * | 1993-05-20 | 1994-11-29 | Canon Inc | Diamond polishing dish and its manufacture |
| US6296740B1 (en) * | 1995-04-24 | 2001-10-02 | Si Diamond Technology, Inc. | Pretreatment process for a surface texturing process |
| CN101234515A (en) * | 2007-01-29 | 2008-08-06 | 周晓光 | Method for cutting simulation artificial diamond |
| TW201430114A (en) * | 2012-11-06 | 2014-08-01 | Sinmat Inc | Smooth diamond surfaces and CMP method for forming |
| CN104029125A (en) * | 2013-03-08 | 2014-09-10 | 鑫晶钻科技股份有限公司 | Sapphire polishing pad dresser and manufacturing method thereof |
| CN109693147A (en) * | 2019-01-24 | 2019-04-30 | 泉州市友腾光电科技有限公司 | A kind of ZNSE lenses polishing technique |
| CN112025417A (en) * | 2020-08-20 | 2020-12-04 | 中国兵器科学研究院宁波分院 | Non-contact ion beam polishing method for surface of optical diamond material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114102272B (en) | 2022-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Paetzelt et al. | Etching of silicon surfaces using atmospheric plasma jets | |
| US20020148560A1 (en) | Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces | |
| Jourdain et al. | Reactive atom plasma (RAP) figuring machine for meter class optical surfaces | |
| CN1876320A (en) | Normal atmosphere plasma burnishing device | |
| US11339468B2 (en) | Magnetron sputtering scanning method for modifying silicon carbide optical reflector surface and improving surface profile | |
| Guo et al. | Past achievements and future challenges in the development of infrared antireflective and protective coatings | |
| CN114102272B (en) | Ion beam polishing method for high-precision C-direction sapphire window | |
| Demmler et al. | Ion beam figuring of silicon aspheres | |
| Schindler et al. | Precision optical asphere fabrication by plasma jet chemical etching (PJCE) and ion beam figuring | |
| CN113061861A (en) | Method for controlling curvature radius of large-curvature optical element | |
| Ghim et al. | Ultra-precision surface polishing using ion beam figuring | |
| Yamamura et al. | Ultraprecision machining utilizing numerically controlled scanning of localized atmospheric pressure plasma | |
| CN112025417B (en) | Non-contact ion beam polishing method for surface of optical diamond material | |
| CN111500985B (en) | Preparation method for low-stress all-dielectric optical film | |
| Huang et al. | Refractive index variation of amorphous Ta 2 O 5 film fabricated by ion beam sputtering with RF bias power | |
| Arnold et al. | Plasma jet assisted polishing of fused silica freeform optics | |
| CN103898466A (en) | Method for preparing AZO film | |
| Franz et al. | IBF technology for nanomanufacturing technology | |
| Arnold et al. | Advancements in ion beam figuring | |
| Wang et al. | Single point diamond turning of aspherical surface with high precision assisted by ion beam figuring | |
| US6402900B1 (en) | System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cube | |
| Ren et al. | Measurement of Contact Pressure Distribution Map at Workpiece/tin Lap Interface and Process Parameters Optimization During Full-Aperture Polishing With Tin Lap | |
| CN111609810B (en) | Method for determining etching depth of high-energy ion beam on glass substrate | |
| Gailly et al. | Ion beam figuring for precision optics | |
| Xin et al. | Study on the key parameters in etching of fused silica using atmospheric inductively coupled plasma |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |