CN114093624A - Planar transformer and power module - Google Patents
Planar transformer and power module Download PDFInfo
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- CN114093624A CN114093624A CN202111190502.1A CN202111190502A CN114093624A CN 114093624 A CN114093624 A CN 114093624A CN 202111190502 A CN202111190502 A CN 202111190502A CN 114093624 A CN114093624 A CN 114093624A
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- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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Abstract
The application provides a planar transformer and a power module, and the first medium component and the second medium component with different relative magnetic conductivities are stacked, so that the magnetic leakage flux of a primary coil is reduced, the coupling degree of the primary coil and a secondary coil is improved, and further the leakage inductance of the transformer is reduced. The planar transformer comprises a coil assembly, a first medium assembly and a second medium assembly which are arranged in a stacked mode. The coil assembly comprises a primary coil and a secondary coil, the primary coil and the secondary coil are both arranged on the first medium assembly, and the relative permeability of the second medium assembly can be larger than that of the first medium assembly.
Description
Technical Field
The present application relates to the field of energy technology, and more particularly, to a planar transformer and a power module in the field of energy technology.
Background
As a core component of a switching power supply, a high-frequency transformer often has a decisive influence on key indexes such as efficiency and power density of the switching power supply, and therefore, it is necessary to deeply study the high-frequency transformer.
High frequency transformers can be classified into wound transformers and planar transformers according to the type of structure. The winding transformer has the advantages of low cost, small direct-current resistance of windings and the like, but the winding transformer also has the defects of low processing efficiency, poor performance consistency, large size and the like. Compared with a winding transformer, the planar transformer has the advantages of low height, small volume, mass rapid production, good performance consistency and the like, but the planar transformer in the related technology has the defect of larger leakage inductance.
Therefore, a planar transformer with less leakage inductance is needed.
Disclosure of Invention
The application provides a planar transformer and power module, and leakage inductance and volume are all less, and the processing complexity is low moreover.
In a first aspect, the present application provides a planar transformer, which may include a first dielectric assembly, a second dielectric assembly, and a coil assembly, wherein the first dielectric assembly and the second dielectric assembly may be stacked.
Wherein the coil assembly may comprise at least one (i.e. one or more) first coil and at least one (i.e. one or more) second coil. Both the at least one first coil and the at least one second coil may be disposed on the first dielectric assembly.
Alternatively, the relative permeability of the second dielectric member may be greater than the relative permeability of the first dielectric member.
It is to be explained that relative permeability refers to the ratio of the permeability of a medium (a physical quantity for characterizing the magnetism of the medium) and the permeability of a vacuum. Thus, the relative permeability of the second dielectric member may refer to a ratio of the permeability of the second dielectric member to the vacuum permeability, and the relative permeability of the first dielectric member may refer to a ratio of the permeability of the first dielectric member to the vacuum permeability.
Thus, the second dielectric component may be referred to as a high permeability (i.e., relatively high permeability) dielectric component relative to the first dielectric component, and thus the first dielectric component may be referred to as a low permeability (i.e., relatively low permeability) dielectric component.
The utility model provides a planar transformer is through the magnetic flux that does not have the coupling of second coil (reduced the magnetic leakage flux of first coil promptly) in the lower first medium subassembly of relative permeability reduces the total magnetic flux that first coil produced, has improved the degree of coupling of first coil with the second coil, and then has reduced planar transformer's leakage inductance.
In one possible implementation, the first dielectric assembly may include a layer of the first dielectric layer. Thus, one or more first coils and one or more second coils are both disposed on the first dielectric layer.
In another possible implementation manner, the first dielectric assembly may include multiple first dielectric layers, and each first dielectric layer may be stacked, that is, each first dielectric layer and the second dielectric assembly may be stacked. One or more first coils may be disposed on one or more of the plurality of first dielectric layers, and similarly, one or more second coils may be disposed on one or more of the plurality of first dielectric layers.
In one possible implementation, the single-sided width (i.e., single-sided width) of the at least one first coil may be greater than 1.5 times the thickness of the first dielectric assembly (i.e., the total thickness of all first dielectric layers in the first dielectric assembly). The single-sided width of the at least one second coil may also be greater than 1.5 times the thickness of the first dielectric assembly.
Further, the second dielectric member may include at least one second dielectric layer. At least one second dielectric layer may be disposed in a stack.
Optionally, if the second dielectric layer has only one layer, the second dielectric layer is stacked with one or more first dielectric layers. If the second dielectric layer has multiple layers, multiple second dielectric layers are stacked, and multiple second dielectric layers and one or more first dielectric layers are also stacked (i.e., the first dielectric assembly and the second dielectric assembly are stacked).
In one possible implementation, the planar transformer provided by the present application may further include a third dielectric component. The third dielectric assembly may be stacked with the first dielectric assembly and the second dielectric assembly, and the third dielectric assembly and the second dielectric assembly are respectively disposed at both sides of the first dielectric assembly.
Alternatively, the relative permeability of the third dielectric component may be greater than the relative permeability of the first dielectric component. Therefore, the third dielectric component may also be referred to as a high permeability (i.e., relatively high permeability) dielectric component relative to the first dielectric component.
Further, the relative permeability of the third dielectric component may be equal to the relative permeability of the second dielectric component.
The third dielectric assembly may also include at least one third dielectric layer, similar to the second dielectric assembly.
Optionally, if the third dielectric layer has only one layer, the third dielectric layer is stacked with one or more first dielectric layers. If the third dielectric layer has multiple layers, then multiple layers of the third dielectric layer are stacked, and multiple layers of the third dielectric layer are also stacked with one or more layers of the first dielectric layer (i.e., the third dielectric assembly and the first dielectric assembly are stacked).
In a possible implementation manner, at least one second dielectric layer in the second dielectric assembly and at least one third dielectric layer in the third dielectric assembly may respectively employ nickel zinc ferrite. Of course, other magnetic media such as manganese zinc ferrite can be used as the main component for the at least one second dielectric layer and the at least one third dielectric layer, which is not limited in this application.
Further, the second dielectric layer(s) may be provided with conductor lines (e.g., pads, etc.). Similarly, the third dielectric layer(s) may also be provided with conductor lines such as pads. For example, the pads may be disposed on an outer surface of the second media assembly and/or the third media assembly. That is, only the outer surface of the second dielectric member may be provided with the lands, only the outer surface of the third dielectric member may be provided with the lands, or the outer surfaces of the second dielectric member and the third dielectric member may be provided with the lands, respectively.
In a possible implementation manner, the planar transformer provided by the present application can be manufactured by using a low temperature co-fired ceramic process or a high temperature co-fired ceramic process. Of course, other sintering processes may be used, and the present application is not limited thereto.
The planar transformer provided by the application can be processed by a pressing process and a sintering process, and the processing complexity is low. In addition, the integration level of the first medium assembly, the second medium assembly, the third medium assembly and the coil assembly is high, the whole planar transformer is designed in an integrated mode, the height is low, and the size is small.
In a second aspect, the present application provides a power module, which may include the planar transformer provided in the first aspect and any possible implementation manner thereof.
In one example, the power supply module may include a planar transformer and a semiconductor device.
The planar transformer is used as a substrate carrier, a bonding pad is arranged on the planar transformer, and the semiconductor device can be welded on the bonding pad.
Alternatively, the semiconductor device may be a chip, a resistor, a capacitor, or the like, which is not limited in this application.
It should be noted that the power module may include other functional units besides the planar transformer and the semiconductor device, which is not limited in this application.
In another example, the power supply module may include a planar transformer, a semiconductor device, and a functional unit (e.g., a filter circuit for filtering, etc.).
The functional unit is used as a substrate carrier, the planar transformer is used as an independent component, the planar transformer and the semiconductor device are respectively arranged on the functional unit, and the planar transformer and the semiconductor device have a connection relation.
Similarly, the semiconductor device may also be a chip, a resistor, a capacitor, or the like, which is not limited in this embodiment.
It should also be noted that the power module may include other functional units besides the functional units such as the planar transformer, the semiconductor device, and the filter circuit, which is not limited in this embodiment of the present application.
It should be understood that the second aspect of the present application is consistent with the technical solution of the first aspect of the present application, and the beneficial effects obtained by the aspects and the corresponding possible implementation manners are similar and will not be described again.
Drawings
Fig. 1 is a schematic structural view of a planar transformer in the embodiment of the present application;
fig. 2 is a schematic structural view of a planar transformer in the embodiment of the present application;
fig. 3 is a schematic structural view of a planar transformer in the embodiment of the present application;
FIG. 4 is a schematic diagram of a magnetic circuit model of a planar transformer in an embodiment of the present application;
FIG. 5 is a schematic block diagram of a power module in an embodiment of the present application;
fig. 6 is a schematic structural diagram of a planar transformer in the embodiment of the present application.
Detailed Description
The technical solution in the present application will be described below with reference to the accompanying drawings.
To make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly and completely described below with reference to the drawings in the present application, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first," "second," and the like in the description examples and claims of this application and in the drawings are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, nor order. Furthermore, the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover a non-exclusive inclusion, such as a list of steps or elements. A method, system, article, or apparatus is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such process, system, article, or apparatus.
It should be understood that in the present application, "at least one" means one or more, "a plurality" means two or more. "and/or" for describing an association relationship of associated objects, indicating that there may be three relationships, e.g., "a and/or B" may indicate: only A, only B and both A and B are present, wherein A and B may be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single item(s) or plural items. For example, at least one (one) of a, b, or c, may represent: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", wherein a, b, c may be single or plural.
The working frequency of the high-frequency transformer is often over the medium frequency (such as 10kHz), and the high-frequency transformer can be used in a switching power supply with higher switching frequency, so that the ripple of the output voltage of the switching power supply is reduced. As a core component of a switching power supply, a high-frequency transformer often has a decisive influence on key indexes such as efficiency and power density of the switching power supply, and therefore, it is necessary to deeply study the high-frequency transformer.
High frequency transformers can be classified into wound transformers and planar transformers according to the type of structure. The following describes a wound transformer and a planar transformer, respectively:
(1) the winding transformer comprises a framework, a coil and a magnetic core. The coil is wound on the framework, and the coil and the magnetic core can be assembled in a matched mode. The winding transformer has the advantages of low cost, small direct-current resistance of windings and the like, but the winding transformer also has the defects of low processing efficiency, poor performance consistency, large size and the like.
(2) The planar transformer may be classified into a Printed Circuit Board (PCB) planar transformer (which may be referred to as a PCB planar transformer) and a co-fired magnetic ceramic planar transformer.
The PCB planar transformer may include a printed circuit board (with a primary winding and a secondary winding) and a magnetic core (which may be in an E-type structure or an RM-type structure, etc.) which are assembled together. The PCB planar transformer has the advantages of low height, small volume, mass rapid production, good performance consistency and the like.
Among them, the cofired magnetic ceramic planar transformer may generally include a low temperature cofired ceramic (low temperature co-fired ceramic) planar transformer (which may be referred to as LTCC planar transformer) and a high temperature cofired ceramic (high temperature co-fired ceramic) planar transformer (which may be referred to as HTCC planar transformer).
The LTCC planar transformer is described as an example. Planar transformers for LTCC typically comprise a multi-layer ceramic substrate having magnetic properties printed with a primary winding and a secondary winding. The multilayer ceramic substrate may be laminated and sintered at a temperature of less than 950 ℃. Because the magnetic ceramic substrate has certain relative permeability, the LTCC planar transformer does not need to be assembled with an additional magnetic core, and the laminated and sintered ceramic substrate has the function of a high-frequency transformer. Therefore, compared with a PCB planar transformer, the LTCC planar transformer is lower in height and smaller in volume.
Meanwhile, because the magnetic ceramic substrate between the primary coil and the secondary coil in the LTCC planar transformer has a certain relative magnetic permeability, when the transformer works, magnetic flux generated by the primary coil can pass through the magnetic ceramic substrate between the primary winding and the secondary winding, so that the magnetic flux generated by the primary coil is not coupled by the secondary coil, and the leakage flux of the primary coil is large, therefore, the LTCC planar transformer has the problem of large leakage inductance.
In order to overcome the problem of large leakage inductance of an LTCC planar transformer or an HTCC planar transformer, the embodiment of the invention provides a planar transformer.
As shown in fig. 1, the planar transformer 1 may include a dielectric member 11 (i.e., a first dielectric member), a dielectric member 12 (i.e., a second dielectric member), and a coil member 13, and the first dielectric member 11 and the second dielectric member 12 may be stacked.
Optionally, the coil assembly 13 may include at least one (i.e., one or more) coil C (coil)1 (i.e., a first coil, which may be a primary coil of the planar transformer 1) and at least one (i.e., one or more) coil C2 (i.e., a second coil, which may be a secondary coil of the planar transformer 1), where the coil C1 and the coil C2 are coupled by magnetic flux (i.e., there is a magnetic flux coupling relationship between the coil C1 and the coil C2). Both the at least one coil C1 and the at least one coil C2 are disposed (e.g., disposed by printing) on the first media pack 11.
Alternatively, the relative permeability of the dielectric assembly 12 (which may be in μ)r2Expressed as μ) may be greater than the relative permeability of the dielectric assembly 11 (which may be expressed as μ @)r1Expressed), that is, μr2Greater than mur1。
Thus, the dielectric component 12 can be referred to as a high permeability (i.e., relatively high permeability) dielectric component relative to the dielectric component 11, and thus, the dielectric component 11 can be referred to as a low permeability (i.e., relatively low permeability) dielectric component.
As described above, relative permeability refers to the permeability of a medium (a physical quantity used to characterize the magnetism of a medium) and the permeability of a vacuum (which may be in terms of μ;)0Expressed) of the two.
Thus, the relative permeability μ of the dielectric member 12r2May be the permeability of the dielectric assembly 12 (which may be in μ2Expressed) and vacuum permeability μ0Ratio of (i.e.. mu.)r2＝μ2/μ0。
Similarly, the relative permeability μ of the dielectric member 11r1May be the permeability of the dielectric member 11 (which may be in μ1Expressed) and vacuum permeability μ0Ratio of (i.e.. mu.)r1＝μ1/μ0。
According to the planar transformer provided by the embodiment of the application, the magnetic flux which is not coupled by the coil C2 (namely, the leakage magnetic flux of the coil C1) in the total magnetic flux generated by the coil C1 is reduced through the medium component 11 with lower relative magnetic permeability, the coupling degree of the coil C1 and the coil C2 is improved, and further the leakage inductance of the planar transformer is reduced.
In one possible implementation, the dielectric assembly 11 may include one dielectric layer a (i.e., the dielectric assembly 11 includes only one first dielectric layer). Thus, one or more coils C1 and one or more coils C2 are disposed on the medium layer a.
In another possible implementation manner, the dielectric assembly 11 may include multiple dielectric layers a (i.e., the number of dielectric layers a is multiple), and each dielectric layer a may be stacked, that is, each dielectric layer a and the dielectric assembly 12 may be stacked. One or more coils C1 may be disposed on one or more of the plurality of dielectric layers a, and similarly, one or more coils C2 may be disposed on one or more of the plurality of dielectric layers a.
Alternatively, one or more coils C1 and one or more coils C2 may be disposed on the media pack 11 as follows:
the first method is as follows: one or more coils C1 are disposed on odd-numbered medium layers a (which may be all odd-numbered medium layers a), and one or more coils C2 are disposed on coupled medium layers a (which may be all even-numbered medium layers a).
That is, one or more coils C1 are provided on the odd-numbered dielectric layers a, respectively, and one or more coils C2 are not provided. One or more coils C2 are respectively disposed on the medium layers a numbered even, and one or more coils C1 are not disposed on any of the medium layers a.
The second method comprises the following steps: the medium layer A has even layers (which can be represented by N), one or more coils C1 are respectively arranged on the medium layer A with the serial number of N/2 and the medium layer A before the serial number of N/2, and one or more coils C2 are respectively arranged on the medium layer A after the serial number of N/2.
That is, medium layer a numbered N/2 and medium layer a numbered before N/2 are provided with one or more coils C1, respectively, and are not provided with one or more coils C2. One or more coils C2 are respectively arranged on the medium layer A with the serial number of N/2, and one or more coils C1 are not arranged on the medium layer A.
The third method comprises the following steps: one or more coils C1 and one or more coils C2 are respectively arranged on each dielectric layer A.
It should be noted that, the embodiments of the present application only provide several possible arrangement manners of the coil C1 and the coil C2, and of course, the coil C1 and the coil C2 may also be arranged in other manners than the several manners provided by the embodiments of the present application (that is, the coil C1 and the coil C2 are not limited to the arrangement manners provided by the embodiments of the present application), and the embodiments of the present application do not limit this.
In one example, as shown in FIG. 2, the dielectric assembly 11 may be provided with 4 dielectric layers A.
The first medium layer a and the fourth medium layer a are respectively provided with a turn of coil C2, the turn of coil C2 provided on the first medium layer a and the turn of coil C2 provided on the fourth medium layer a can be connected between layers through a through hole (for example, end-to-end connection, that is, the turn of coil C2 provided on the first medium layer a is connected in series with the turn of coil C2 provided on the fourth medium layer a), so that a 2-turn coil C2 (that is, the secondary coil is 2 turns) can be formed.
The second medium layer a and the third medium layer a are respectively provided with 3 turns of coil C1, the one turn of coil C1 arranged on the second medium layer a and the one turn of coil C1 arranged on the third medium layer a can be connected between layers through holes (for example, end-to-end connection, that is, the one turn of coil C1 arranged on the second medium layer a is connected in series with the one turn of coil C1 arranged on the third medium layer a), so that a 6-turn coil C1 (that is, the primary coil is 6 turns) can be formed.
Further, with continued reference to fig. 2, since coil C1 has 6 turns and coil C2 has 2 turns, the single-sided width of coil C1 (i.e., the width of 3 turns of coil C1 that is one-sided in 6-turn coil C1) or the single-sided width of coil C2 (i.e., the width of 1 turn of coil C2 that is one-sided in 2-turn coil C2) may be greater than 1.5 times the thickness of the entire dielectric assembly 11 (i.e., the total thickness of the four dielectric layers a, denoted by a), i.e., b >1.5 a.
It should be noted that if the second dielectric layer a and the third dielectric layer a are respectively provided with the one-turn coil C1 and the one-turn coil C2 which respectively have only one turn, since the coils C1 and C2 are circular ring shapes (two single sides in the length direction), the single-side width of the one-turn coil C1 or the one-turn coil C2 can be larger than the thickness of the whole dielectric assembly 11 (i.e. the total thickness of the four dielectric layers a).
In one possible implementation, the media pack 12 may include at least one dielectric layer B (i.e., the media pack 12 may include one or more dielectric layers B).
Optionally, if the dielectric layer B has only one layer, the dielectric layer B is stacked with one or more dielectric layers a. If the dielectric layer B has a plurality of layers, the plurality of dielectric layers B are stacked, and the plurality of dielectric layers B and one or more dielectric layers a are also stacked (i.e., the dielectric assembly 12 and the dielectric assembly 11 are stacked).
The planar transformer 1 provided by the embodiment of the present application may further include a dielectric assembly 14 (i.e., a third dielectric assembly), as shown in fig. 2 and 3. The media pack 14 may be stacked with the media pack 11 and the media pack 12, and the media pack 14 and the media pack 12 are disposed at both sides of the media pack 11, respectively.
Optionally, the relative permeability of the dielectric assembly 14 (which may be in μ;)r3Expressed) may be greater than the relative permeability μ of the dielectric component 11r1I.e. mur3Greater than mur1。
Therefore, the dielectric component 14 can also be referred to as a high permeability (i.e., relatively high permeability) dielectric component relative to the dielectric component 11.
In one example, the relative permeability μ of the dielectric assembly 14r3Can have a relative magnetic permeability μ with the dielectric member 12r2Equal, i.e. mur3＝μr2。
It should be noted that the relative magnetic permeability of the dielectric layer a in the dielectric component 11, the dielectric layer B in the dielectric component 12, and the dielectric layer D in the dielectric component 14 may be adjusted according to an application scenario of the planar transformer, and the adjustment method is not limited in this embodiment of the application.
Illustratively, the relative permeability μ of the dielectric assembly 11r1Which may be 10, the relative permeability mu of the dielectric assembly 12r2And the relative permeability mu of the dielectric assembly 14r3May be 500. It can be seen thatr2And mur3Much greater than μr1。
Similar to the media pack 12, the media pack 14 may also include at least one media layer D (i.e., the media pack 14 may include one or more media layers D).
Optionally, if the dielectric layer D has only one layer, the dielectric layer D is stacked with one or more dielectric layers a. If there are multiple dielectric layers D, then multiple dielectric layers D are stacked and multiple dielectric layers D are stacked with one or more dielectric layers a (i.e., dielectric assembly 14 and dielectric assembly 11 are stacked).
In one possible implementation, the dielectric layer B(s) may be made of a magnetic medium with a main component such as nickel-zinc ferrite, manganese-zinc (MnZn) ferrite, or metal magnetic powder, and the dielectric layer D(s) may be made of a magnetic medium with a main component such as nickel-zinc ferrite, manganese-zinc ferrite, or metal magnetic powder, respectively. Of course, the dielectric layer B and the dielectric layer D may also be made of other materials with relative magnetic permeability greater than that of the dielectric layer a, which is not limited in this embodiment of the application.
Further, the dielectric layer B(s) may be provided with conductor lines (e.g., pads, etc.). Similarly, the dielectric layer D(s) may be provided with conductor lines such as pads. For example, the pads may be disposed on an outer surface of the media pack 12 and/or the media pack 14.
For example, only the outer surface of the media pack 12 may be provided with pads.
If only one dielectric layer B is included in the dielectric assembly 12, the bonding pads may be disposed on the outer surface of the dielectric layer B.
If multiple dielectric layers B are included in the dielectric assembly 12, the pads may be disposed on the outer surface of the outermost dielectric layer B in the dielectric assembly 12.
Also for example, only the outer surface of the media pack 14 may be provided with pads.
If only one dielectric layer D is included in the dielectric assembly 14, the bonding pads may be disposed on an outer surface of the dielectric layer D.
If multiple dielectric layers D are included in the dielectric assembly 14, the pads may be disposed on the outer surface of the outermost dielectric layer D in the dielectric assembly 14.
Also for example, the outer surface of the media pack 12 and the outer surface of the media pack 14 are provided with pads, respectively.
If only one dielectric layer B is included in the dielectric assembly 12 and only one dielectric layer D is included in the dielectric assembly 14, pads are provided on the outer surface of the dielectric layer B and the outer surface of the dielectric layer D, respectively. If a plurality of dielectric layers B are included in the dielectric member 12 and a plurality of dielectric layers D are included in the dielectric member 14, pads are provided on the outer surface of the outermost dielectric layer B in the dielectric member 12 (i.e., the outer surface of the dielectric member 12) and the outer surface of the outermost dielectric layer D in the dielectric member 14 (i.e., the outer surface of the dielectric member 14), respectively.
Of course, the pads or other types of conductor lines may be flexibly arranged according to the application scenario of the planar transformer.
In a possible implementation manner, multiple dielectric layers a in the dielectric assembly 11 may be stacked in a vertical direction, multiple dielectric layers B in the dielectric assembly 12 and multiple dielectric layers D in the dielectric assembly 14 are stacked with the multiple dielectric layers a, then all the dielectric layers (including all the dielectric layers a, all the dielectric layers B, and all the dielectric layers D) are laminated by using a lamination process, and a sintering process is used to obtain the planar transformer provided in the embodiment of the present application.
The planar transformer provided by the embodiment of the application can be processed by a pressing process and a sintering process, and the processing complexity is low. In addition, the integration of the three dielectric assemblies (i.e. the dielectric assembly 11, the dielectric assembly 12 and the dielectric assembly 14) and the coil assembly 13 is high, and the whole planar transformer is designed integrally, has low height and small volume.
Further, the planar transformer provided in the embodiment of the present application may be manufactured by a low temperature co-fired ceramic (LTCC) process or a high temperature co-fired ceramic (HTCC) process. Of course, other sintering processes may be adopted, and this is not limited in the embodiments of the present application.
The embodiment of the present application takes a low temperature co-fired ceramic process as an example for explanation, and therefore, the planar transformer provided in the embodiment of the present application may be referred to as an LTCC planar transformer. Meanwhile, the dielectric layer B and the dielectric layer D in the embodiment of the present application take nickel-zinc ferrite as an example, so that the planar transformer provided in the embodiment of the present application may also be referred to as a low temperature co-fired ceramic (LTCF) planar transformer (i.e., LTCF planar transformer).
In one possible implementation, the transformer shown in fig. 3 may be equivalent to the magnetic circuit model shown in fig. 4. In fig. 4, F represents the magnetomotive force generated by one or more coils C1, and satisfies F — NI, where N represents the total number of turns of coil C1, and I is the current flowing through coil C1.
Representing the total flux generated by coil C1,
represents the magnetic flux coupled by coil C2, an
R1 represents magnetic flux
The magnetic resistance through the magnetic circuit is,
represents the flux not coupled by the coil C2 (i.e., the leakage flux of the coil C1), and
r2 represents magnetic flux
The reluctance of the magnetic circuit is passed. R represents the total magnetic flux
And R ═ R1// R2.
Alternatively, the ratio K of the leakage flux can be expressed by the formula:
due to the relative permeability μ of the dielectric assembly 14r3Can have a relative magnetic permeability μ with the dielectric member 12r2Equal, can set μr3＝μr2＝μr. Thus, according to the relative permeability μ of the dielectric member 11r1Relative permeability μ of dielectric assembly 12 and dielectric assembly 14rAnd magnetic permeability μ in vacuum0And combining the single width b of coil C1 or coil C2 and the thickness a of the dielectric assembly 11, the magnetic flux
The reluctance R1 through the magnetic circuit can be formulated as:
R1＝2b/(μ0·μr1·Aeb)+2a(μ0·μr·Aea) (2)
similarly, magnetic flux
The reluctance R2 through the magnetic circuit can be formulated as:
R2＝2b/(μ0·μr1·Aec) (3)
in the formulae (2) and (3), AeaCan represent magnetic flux
Equivalent cross-sectional area in the magnetic paths of all dielectric layers a. AebCan represent magnetic flux
Equivalent cross-sectional area in the magnetic path of dielectric layer B and dielectric layer D. AecCan represent magnetic flux
Equivalent cross-sectional area in the magnetic paths of all dielectric layers a.
It should be noted that, in order to simplify the analysis process, it is intuitively illustrated that the leakage inductance of the planar transformer provided by the embodiment of the present invention is small, and Ae may be seta＝Aeb＝Aec。
In one example, combining equation (1), equation (2), and equation (3), i.e., substituting equation (2) and equation (3) into equation (1), can obtain:
as can be seen from the above equation (4), the ratio K of the leakage magnetic flux to
In direct proportion. Thus, when
The smaller the ratio K of the leakage magnetic flux, the smaller the magnetic flux
The smaller will be, and the smaller will be the leakage inductance of the planar transformer.
In another example, combining equation (1), equation (2), and equation (3) may also result in:
from the above equation (5), it can be seen that the ratio of the leakage magnetic flux K to the leakage magnetic flux K
In direct proportion. Thus, when
The smaller the ratio K of the leakage magnetic flux, the smaller the magnetic flux
The smaller will be, and the smaller will be the leakage inductance of the planar transformer.
In yet another example, electromagnetic simulation may be performed on the planar transformer provided in the related art, and it can be obtained that the excitation inductance of the planar transformer provided in the related art is 64.7uH, the leakage inductance is 20.2uH, and the proportion of the leakage inductance in the excitation inductance (i.e., the leakage inductance rate) is 31.2%. It is also possible to provide the relative permeability μ of the dielectric member 11r1Taking 10 the relative permeability μ of the dielectric component 12r2Taking 500, the relative permeability μ of the dielectric assembly 14r3Get 500 and bOn the basis of 1.5a, performing electromagnetic simulation on the planar transformer provided in the embodiment of the present application can obtain that the excitation inductance of the planar transformer provided in the embodiment of the present application is 7.5uH, the leakage inductance is 0.5uH, and the proportion of the leakage inductance to the excitation inductance (i.e., the leakage inductance ratio) is 6.7%, as shown in table 1:
TABLE 1
As can be seen from table 1, compared with the related art, the planar transformer provided in the embodiment of the present application has greatly reduced leakage inductance without increasing the volume, and the leakage inductance rate is also reduced from 31.2% in the related art to 6.7% in the embodiment of the present application.
The embodiment of the application provides a power module, as shown in fig. 5. A Power Supply Module (PSM) 1 may include a planar transformer 1 and a semiconductor device 2.
The planar transformer 1 serves as a substrate carrier, Bonding Pads (BP) are disposed on the planar transformer 1, and the semiconductor device 2 may be soldered on the bonding pads.
In a possible implementation manner, the semiconductor device 2 may be a chip, a resistor, a capacitor, or the like, which is not limited in this embodiment.
It should be noted that the power module SPM1 shown in fig. 5 may include other functional units besides the planar transformer 1 and the semiconductor device 2, which is not limited in this embodiment of the present application.
The embodiment of the present application further provides another power module, as shown in fig. 6. The power module PSM2 may include a planar transformer 1, a semiconductor device 2, and a functional unit 3 (e.g., a filter circuit for filtering, etc.).
The functional unit 3 is used as a substrate carrier, the planar transformer 1 is used as an independent component, the planar transformer 1 and the semiconductor device 2 are respectively arranged on the functional unit 3, and the planar transformer 1 and the semiconductor device 2 have a connection relation.
Similarly, the semiconductor device 2 in fig. 6 may also be a chip, a resistor, a capacitor, or the like, which is not limited in this embodiment.
It should also be noted that the power module SPM2 shown in fig. 6 may include other functional units besides the functional unit 3 such as the planar transformer 1, the semiconductor device 2, and the filter circuit, which is not limited in this embodiment of the present application.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (13)
1. A planar transformer, comprising a first dielectric assembly, a second dielectric assembly and a coil assembly;
the first media pack and the second media pack are arranged in a stack;
the coil assembly comprises at least one first coil and at least one second coil, and the at least one first coil and the at least one second coil are both arranged on the first medium assembly;
the relative magnetic permeability of the second dielectric component is greater than the relative magnetic permeability of the first dielectric component.
2. The planar transformer of claim 1, wherein a single-sided width of the at least one first coil or a single-sided width of the at least one second coil is greater than 1.5 times a thickness of the first dielectric assembly.
3. The planar transformer according to claim 1 or 2, wherein the first dielectric member comprises a first dielectric layer;
the at least one first coil and the at least one second coil are disposed on the first dielectric layer.
4. The planar transformer according to claim 1 or 2, wherein the first dielectric assembly comprises a plurality of first dielectric layers, each of the plurality of first dielectric layers being disposed one on top of the other;
the at least one first coil is arranged on at least one first dielectric layer in the multiple first dielectric layers, and the at least one second coil is arranged on at least one first dielectric layer in the multiple first dielectric layers.
5. The planar transformer according to any one of claims 1 to 4, wherein the second dielectric assembly comprises at least one second dielectric layer;
the at least one second dielectric layer is disposed in a stack.
6. The planar transformer according to any one of claims 1 to 5, further comprising a third dielectric component;
the third medium assembly and the first medium assembly are arranged in a stacked mode, and the third medium assembly and the second medium assembly are arranged on two sides of the first medium assembly respectively.
7. The planar transformer of claim 6, wherein the third dielectric component has a relative permeability greater than a relative permeability of the first dielectric component.
8. The planar transformer according to claim 6 or 7, wherein the relative permeability of the third dielectric component is equal to the relative permeability of the second dielectric component.
9. The planar transformer according to any one of claims 6 to 8, wherein the third dielectric assembly comprises at least one third dielectric layer;
the at least one third dielectric layer is disposed in a stacked arrangement.
10. The planar transformer according to any one of claims 5 to 8, wherein at least one of the second dielectric layers of the second dielectric assembly and at least one of the third dielectric layers of the third dielectric assembly are made of NiZn ferrite.
11. Planar transformer according to one of the claims 6 to 10, characterized in that the second dielectric component and/or the third dielectric component is provided with conductor lines.
12. The planar transformer according to any one of claims 1 to 11, wherein the planar transformer is manufactured using a low temperature co-fired ceramic process or a high temperature co-fired ceramic process.
13. A power supply module comprising a planar transformer as claimed in any one of claims 1 to 12.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111190502.1A CN114093624A (en) | 2021-10-13 | 2021-10-13 | Planar transformer and power module |
| PCT/CN2022/103459 WO2023060951A1 (en) | 2021-10-13 | 2022-07-01 | Planar transformer and power supply module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111190502.1A CN114093624A (en) | 2021-10-13 | 2021-10-13 | Planar transformer and power module |
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| Publication Number | Publication Date |
|---|---|
| CN114093624A true CN114093624A (en) | 2022-02-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111190502.1A Pending CN114093624A (en) | 2021-10-13 | 2021-10-13 | Planar transformer and power module |
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| Country | Link |
|---|---|
| CN (1) | CN114093624A (en) |
| WO (1) | WO2023060951A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023060951A1 (en) * | 2021-10-13 | 2023-04-20 | 华为技术有限公司 | Planar transformer and power supply module |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5062197A (en) * | 1988-12-27 | 1991-11-05 | General Electric Company | Dual-permeability core structure for use in high-frequency magnetic components |
| JPH0714716A (en) * | 1993-06-22 | 1995-01-17 | Taiyo Yuden Co Ltd | Multilayer ceramic magnetic component and production thereof |
| JP5853508B2 (en) * | 2011-09-05 | 2016-02-09 | 株式会社村田製作所 | Multilayer inductor |
| CN109524215A (en) * | 2018-12-29 | 2019-03-26 | 矽力杰半导体技术(杭州)有限公司 | Transformer and its manufacturing method is laminated |
| CN111261392A (en) * | 2019-12-20 | 2020-06-09 | 南京矽力微电子技术有限公司 | Power transformer and method for manufacturing the same |
| CN114093624A (en) * | 2021-10-13 | 2022-02-25 | 华为技术有限公司 | Planar transformer and power module |
-
2021
- 2021-10-13 CN CN202111190502.1A patent/CN114093624A/en active Pending
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2022
- 2022-07-01 WO PCT/CN2022/103459 patent/WO2023060951A1/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023060951A1 (en) * | 2021-10-13 | 2023-04-20 | 华为技术有限公司 | Planar transformer and power supply module |
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| WO2023060951A1 (en) | 2023-04-20 |
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