CN1140891C - Process for preparing organic electroleuminescent device with quantum trap - Google Patents
Process for preparing organic electroleuminescent device with quantum trap Download PDFInfo
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- CN1140891C CN1140891C CNB011141441A CN01114144A CN1140891C CN 1140891 C CN1140891 C CN 1140891C CN B011141441 A CNB011141441 A CN B011141441A CN 01114144 A CN01114144 A CN 01114144A CN 1140891 C CN1140891 C CN 1140891C
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Abstract
The present invention discloses a method for manufacturing an electroluminescent device with an organic quantum well structure. The quantum well structure is prepared by a doping method, and hole transmission materials are used as a doping base body. An undoping layer of the materials is used as a barrier layer, while a doping layer is used as a potential well layer. The alternative doping structure forms the quantum well structure.
Description
The present invention relates in photoelectricity flat pannel display field, prepare a kind of a kind of method of organic electroleuminescent device with quantum trap of flat gain.
Organic electroluminescent device is compared with the inorganic light-emitting device, it is cheap to have raw material, the material range of choice is wide, manufacture craft is simple, the luminosity height is easy to realize that colored large-area flat-plate shows that low-voltage driving can be complementary with integrated circuit, and characteristics such as compatible with existing semiconductor technology can be produced on the flexible substrate.The research of organic display spare causes extensive attention in international community, and research institution that countries in the world are famous and major company competitively drop into a large amount of manpower and materials, in the hope of occupying the leading position at this emerging field.Up to the present, organic electroluminescent device strides forward to the stage of industrialization.But, how further to improve the efficient and the stability of device, also be the important topic that people study always.
To the inorganic semiconductor laser instrument, quantum well structure is one of important channel of improving device performance.Quantum well structure has the state density of reduction, improves gain, reduces threshold value, improves modulation band-width, improves advantages such as injecting stability; But quantum well structure physics grows up on band theory, and the most basic requirement of band theory is the long-range order of material.Although organic material does not have long-range order, its basic theoretical model does not also resemble the inorganic semiconductor material clear, but consider that it has the conductivity-temperature relation of optical absorption edge and e index, so still come problem analysis with the basic concepts in the band theory as the first approximation people.People introduce quantum well structure in the organic electroluminescent device, in the hope of improving the device efficiency of organic electroluminescent device, improve the luminescent properties of device.
Common organic electroluminescent device generally adopts double-decker, i.e. this single heterojunction structure of hole transmission layer/electron transfer layer, wherein active area in electron transfer layer near in the very narrow scope of hole transmission layer one.Because in common organic electroluminescent device, how sub the hole is, so inevitably have unnecessary hole in electron transfer layer, does not participate in radiation recombination.And the unnecessary hole in electron transfer layer is the main a kind of internal mechanism that causes that device active region is aging.
The objective of the invention is in order further to improve the organic electroluminescent device performance, effectively bring into play the advantage of quantum well structure as much as possible, avoid the unfavorable factor that influences device performance brought by its structure itself, we adopt doping method to prepare quantum well structure, and active area is placed hole transmission layer.
Utilizing the quantum well structure of commonsense method preparation is the layer structure that is formed by two kinds of different material alternating growths, different therewith is, utilizing the quantum well structure of doping method preparation is by two kinds of different materials, a kind of as the doping parent, another kind is made adulterant, utilize organic hight atmospheric molecular Shu Duoyuan depositing system, adopt method that double source steams altogether with the adulterant alternating-doping in parent, formation is for fertile material, the alternating-doping structure of doped layer/undoped layer, wherein undoped layer is made the quantum well barrier layer, and doped layer is made the potential well layer of quantum well.The organic quantum well luminescent device of making below in conjunction with us is specified.
In the organic molecule vacuum deposition system, two kinds of different organic materials are placed different evaporation sources respectively, substrate places two evaporation sources top, and can rotation and revolution.There is a baffle plate substrate below, and evaporation source also each has a baffle plate.This structure provides convenience for the preparation quantum well structure.Block the baffle plate of substrate below, open the baffle plate of evaporation source,, control two kinds of organic materials growth rate separately by independent control to different evaporation source temperature.The growth rate of two kinds of materials is opened all baffle plates than after suitable, to realize doped layer, the i.e. growth of quantum well layer.Growth rate is monitored with film-thickness monitoring.
We have prepared high performance electroluminescent device, compare with common quantum well structure device, utilize the superiority of the quantum well structure device of doping method preparation mainly contain following some: 1. introduce doping system, itself will improve greatly to the organic light-emitting device performance, improves
Luminous intensity and efficient improve stability etc.2. adopt doping method to prepare quantum well structure.The doping content of adulterant is very low, potential well and
Potential barrier at the interface, concentration gradient is very little, has eliminated common quantum well knot to a great extent
The phase counterdiffusion that trap, base are caused by concentration at the interface in the structure is so eliminated by the interface greatly
The negative effect that causes has improved luminescence efficiency.3. active area is in the NPB layer of doping, is different from common organic luminescent device, and active area is at Alq
Layer.This will reduce owing to the influence of hole unnecessary in the Alq layer to the Alq luminescent lifetime, advance
And the life-span of improving device.Alq is an oxine aluminium; NPB is
N，N’-bis-(1-naphthl)-N，N’-diphenyl-1，1’-biphenyl-4，4’-diami
ne。4. very on a large scale in (4V-13.5V), the gain of device changes very with the rising of voltage
Slowly.This specific character can help improving the life-span of device undoubtedly.5. greatly reduce preparation technology's complicacy.Utilize doping method, the preparation quantum well structure and
The point luminescent device for preparing common doped structure is compared, and its technology is not complicated, therefore,
Improved the yield rate of making device greatly.Below we are described further in conjunction with the accompanying drawings.
Figure one is the molecular structure of used organic material
1. oxine aluminium (Alq)
2.N，N’-bis-(1-naphthl)-N，N’-diphenyl-1，1’-biphenyl-4，4’-diam
ine(NPB)
3. 5,6,11,12-tetraphenyl four benzos (rubrene)
Figure two is an organic quantum trap electroluminescence device structural drawing
The NPB 1.ITO electro-conductive glass (positive electrode) 2.rubrene doping NPB layer 3. does not mix
4. electron transfer layer Alq 5. hole transmission layer NPB 6.LiF/Al (negative electrode)
Figure three is that the brightness of device is with the electric current change curve.Transverse axis is represented electric current (mA), and the longitudinal axis is represented light intensity cd/m
2).
Figure four is that the gain of device is with the change in voltage curve.Horizontal ordinate is represented voltage (V), and the longitudinal axis is represented efficient (cd/A).
In the structure as shown in Figure 2, we make positive electrode with electro-conductive glass (ITO) 1, fluorescent dye 5,6,11,12-tetraphenyl four benzos (rubrene) doping N, building among N '-bis-(1-naphthl)-N, N '-diphenyl-1,1 '-biphenyl-4,4 '-diamine (NPB) 2 is as the trap layer, and thickness is 3nm, and unadulterated (NPB) 3 is as building layer, thickness is 3nm, oxine aluminium (Alq) 4 is made electron transfer layer, and thickness is 30nm, and unadulterated NPB 5 makes hole transmission layer, thickness is 50nm, negative electrode made in the LiF/Al rhythmo structure, and the thickness of LiF is 0.5nm, and the thickness of Al is 100nm.Wherein, the doping ratio about 8% of rubrene:NPB.Device architecture is two trap devices:
ITO/NPB/NPB：rubrene/NPB/NPB：rubrene/Alq/LiF/Al。
The device maximal efficiency reaches 5.6cd/A, and high-high brightness reaches 40000cd/m
2In the world, the organic electroleuminescent device with quantum trap aspect maintains the leading position at present.
The present invention is fit to the making of the electroluminescence device aspect of organic quantum trap.The making of the organic quantum trap electroluminescence device aspect that all employing said methods carry out all belongs to the protection domain of this patent.
Claims (3)
1. a method of making organic electroleuminescent device with quantum trap is characterized in that adopting doping method to prepare quantum well structure, for the doping parent, and doped layer and undoped layer alternating growth, and wherein utilize hole mobile material to make the doping parent.
2. require 1 described method for making according to claim, it is characterized in that quantum well structure adopts the double quantum well structure, wherein the doped layer of hole mobile material is made quantum well layer, and undoped layer is made barrier layer.
3. require 1 described quantum well structure according to claim, it is characterized in that the potential well layer of quantum well and barrier layer thickness are 3nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011141441A CN1140891C (en) | 2001-06-26 | 2001-06-26 | Process for preparing organic electroleuminescent device with quantum trap |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011141441A CN1140891C (en) | 2001-06-26 | 2001-06-26 | Process for preparing organic electroleuminescent device with quantum trap |
Publications (2)
| Publication Number | Publication Date |
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| CN1326177A CN1326177A (en) | 2001-12-12 |
| CN1140891C true CN1140891C (en) | 2004-03-03 |
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| CNB011141441A Expired - Fee Related CN1140891C (en) | 2001-06-26 | 2001-06-26 | Process for preparing organic electroleuminescent device with quantum trap |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101079471B (en) * | 2006-05-25 | 2010-06-09 | 清华大学 | An organic EL part |
| CN102163696A (en) * | 2011-01-27 | 2011-08-24 | 电子科技大学 | Organic electroluminescent device taking quantum well structure as luminous layer |
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2001
- 2001-06-26 CN CNB011141441A patent/CN1140891C/en not_active Expired - Fee Related
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