CN114086154A - Vacuum chamber online cleaning method - Google Patents
Vacuum chamber online cleaning method Download PDFInfo
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- CN114086154A CN114086154A CN202111400214.4A CN202111400214A CN114086154A CN 114086154 A CN114086154 A CN 114086154A CN 202111400214 A CN202111400214 A CN 202111400214A CN 114086154 A CN114086154 A CN 114086154A
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- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000004140 cleaning Methods 0.000 title claims abstract description 44
- 229920000642 polymer Polymers 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 239000007921 spray Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- -1 fluorine ions Chemical class 0.000 claims description 3
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000012423 maintenance Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an online cleaning method for a vacuum chamber, which is used for cleaning polymers accumulated on the surfaces of the vacuum chamber and a gas spray header used in a coating process on line, and comprises the following steps: s1, introducing process gas into the vacuum chamber, applying a radio frequency power supply to the vacuum chamber, keeping for a period of time, and ionizing the process gas to generate high-energy disordered plasma; s2, the plasma chemically reacts with the polymer in the vacuum chamber, or energetic ions are provided by the plasma to bombard the surface of the polymer, so that atoms are ejected from the surface of the polymer; s3, the polymer dropped out of the vacuum chamber is extracted. The invention adopts a physical or chemical method to generate plasma for online cleaning; the plasma cleaning is carried out in a vacuum environment, so that the cleaning can be carried out without stopping, the continuity of the substrate production is ensured, and the equipment stopping maintenance frequency and the stopping cost are reduced; the automatic production continuity is high, the harm of the polymer to personnel is effectively avoided, and the workers are protected.
Description
Technical Field
The invention relates to the technical field of online cleaning, in particular to an online cleaning method for a vacuum chamber.
Background
In the vacuum coating, a metal, an alloy or a compound is evaporated, sputtered or chemically reacted in a vacuum environment by a physical or chemical method to be deposited on the surface of a substrate to form a desired film layer.
In the vacuum coating process, the film layer is not only deposited on the surface of the substrate, but also deposited inside the reaction chamber or on the inner wall, along with the coating, the film layer inside the reaction chamber or on the inner wall is thicker and thicker, after the film layer reaches a certain thickness, the phenomenon of 'film explosion' can occur, a large amount of particles and pollutants are generated to fall off on the substrate, the defect of the substrate film layer is caused, and the yield is reduced and the reject ratio is increased.
Therefore, after a certain number of substrates are produced, the coating reaction chamber is opened to clean the inside or the inner wall of the chamber, and a large amount of work such as dismounting, cleaning, re-vacuumizing and adjusting is carried out, so that the labor and time are wasted, the production progress is seriously affected, and the equipment shutdown cost and the cleaning and maintenance cost are caused. In addition, the film may contain toxic and harmful substances, and the manual cleaning of the film may cause harm to people.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides an online cleaning method for a vacuum chamber. The invention adopts a physical or chemical method to generate plasma for online cleaning; the plasma cleaning is carried out in a vacuum environment, so that the cleaning can be carried out without stopping, the continuity of the substrate production is ensured, and the equipment stopping maintenance frequency and the stopping cost are reduced; the automatic production continuity is high, the harm of the polymer to personnel is effectively avoided, and the workers are protected.
In order to achieve the purpose, the invention adopts the technical scheme that: a vacuum chamber on-line cleaning method is used for cleaning polymers accumulated on the surfaces of a vacuum chamber and a gas spray header used in a coating process on line, and is characterized by comprising the following steps:
s1, introducing process gas into the vacuum chamber, applying a radio frequency power supply to the vacuum chamber, keeping for a period of time, and ionizing the process gas to generate high-energy disordered plasma;
s2, the plasma chemically reacts with the polymer on the inner wall of the vacuum chamber, or the plasma provides energy-carrying ions to bombard the surface of the polymer, so that atoms are ejected from the surface of the polymer;
s3, the polymer dropped out of the vacuum chamber is extracted.
In a preferred embodiment of the present invention, the process gas is a simple substance or a compound that reacts with the film material.
In a preferred embodiment of the present invention, in S1, after a certain number of substrates are produced in the vacuum chamber, uniform plasma spraying without difference, dead angle and dead angle is automatically performed on the inner wall of the chamber.
In a preferred embodiment of the present invention, the power of the rf power source is 300W to 800W, and the holding time is 10 s to 30 s.
In a preferred embodiment of the invention, the thickness of the polymer in the vacuum chamber is detected to select the number of ion shots in the direction of the thickness of the polymer.
In a preferred embodiment of the present invention, the chamber pressure of the vacuum chamber is 2 to 10mT, and the free path of atoms in the plasma is changed by controlling different chamber pressures.
In a preferred embodiment of the present invention, the vacuum chamber is connected to a pendulum valve, and when the pendulum valve is opened, the process gas is introduced again in S3, and the volatile substance generated by the reaction is taken out of the vacuum chamber by the process gas.
The invention provides another vacuum chamber online cleaning method, which comprises the following steps:
a1, when a vacuum chamber adopts PECVD coating, a polymer of a silicon film layer is formed on the inner wall of the vacuum chamber, and after a certain number of substrates are coated, a fluorine-containing compound is introduced to generate plasma;
a2, reacting with the silicon film layer through fluorine ions in the plasma;
and A3, extracting residual compounds generated by the reaction of the silicon film layer in the vacuum chamber.
The invention provides an online cleaning method for a vacuum chamber, which comprises the following steps:
b1, when the vacuum chamber adopts an Al-2% Cu film by evaporation, the inner wall of the vacuum chamber is plated with a polymer of an Al-2% Cu film layer, after a certain number of substrates are coated, argon is introduced and plasma is generated, and the argon generates the plasma to bombard and remove copper in the polymer;
b2, introducing chlorine to generate plasma to remove aluminum in the polymer;
b3, pumping out the vacuum chamber to bombard the detached polymer.
In a preferred embodiment of the present invention, the flow rate of the argon gas is 80 to 100sccm, and the flow rate of the chlorine gas is 10 to 30 sccm.
The invention solves the defects in the background art, and has the following beneficial effects:
(1) the invention provides an on-line cleaning method of a vacuum chamber, which is suitable for cleaning the vacuum chamber used in a coating process and polymers accumulated on the surface of a gas spray header on line; the process gas is ionized by applying radio frequency power to the vacuum chamber to generate high energy disordered plasma, and polymers on the inner wall of the vacuum chamber are removed by physical or chemical methods.
(2) The plasma cleaning is carried out in a vacuum environment, equipment can be cleaned without stopping, the continuity of substrate production is ensured, and the equipment stopping maintenance frequency and the stopping cost are reduced.
(3) According to the invention, after a certain number of substrates are produced, the vacuum chamber is opened to clean the polymer in the chamber or on the inner wall of the chamber, the online cleaning speed is high, the automatic production continuity is high, personnel do not need to contact the polymer in the whole process, the harm of the polymer to the personnel is effectively avoided, and the personnel are protected.
(4) The scheme of the invention is more environment-friendly and safer, the substrate has high capacity, the reject ratio is as low as below 1 percent, and the whole operation cost is greatly reduced.
(5) The swing valve is opened from closing to full opening, and volatile substances generated by reaction are taken out of the vacuum chamber by using the process gas, so that the cleaning effect of the vacuum chamber is further improved, the vacuum chamber can work normally, and the yield of products is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts;
FIG. 1 is a flow chart of a vacuum chamber online cleaning method according to a preferred embodiment of the present invention;
FIG. 2 is a flow chart of another vacuum chamber online cleaning method according to a first embodiment of the present invention;
FIG. 3 is a flow chart of another vacuum chamber online cleaning method according to a second embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to FIG. 1, a flow diagram of an online cleaning method for a vacuum chamber is shown. The vacuum chamber online cleaning method is used for cleaning the vacuum chamber used in the coating process and the polymer accumulated on the surface of the gas spray head online. The vacuum chamber online cleaning method comprises the following steps:
s1, introducing process gas into the vacuum chamber, applying a radio frequency power supply to the vacuum chamber, keeping for a period of time, and ionizing the process gas to generate high-energy disordered plasma;
s2, the plasma chemically reacts with the polymer on the inner wall of the vacuum chamber, or the plasma provides energy-carrying ions to bombard the surface of the polymer, so that atoms are ejected from the surface of the polymer;
s3, the polymer dropped out of the vacuum chamber is extracted.
The process gas is a simple substance or a compound of a gas that reacts with the film material.
In S1, after a certain number of substrates are produced in the vacuum chamber, uniform plasma spraying is automatically performed on the inner wall of the chamber without distinction, dead angle, or the like. According to the invention, after a certain number of substrates are produced, the vacuum chamber is opened to clean the polymer in the chamber or on the inner wall of the chamber, the online cleaning speed is high, the automatic production continuity is high, personnel do not need to contact the polymer in the whole process, the harm of the polymer to the personnel is effectively avoided, and the personnel are protected.
The power of the radio frequency power supply is 300W-800W, and can be 300, 400, 600, 700, 800W and the like. In order to obtain a good cleaning effect, it is necessary to obtain a stable plasma. If the RF power is increased from 0 to 800W instantaneously, the plasma generation will be unstable, which is not favorable for the stable and uniform generation of plasma. Therefore, in actual operation, the power of the rf power source needs to be slowly or sectionally boosted to the preferred power.
The holding time of the RF power source in S1 is 10-30S, which can be any value from 10 to 30, and is preferably 20S.
The chamber pressure of the vacuum chamber is 2 to 10mT, and may be any value of 2 to 10. And by controlling different chamber pressures, the free path of atoms in the plasma is changed, and each part in the vacuum chamber is cleaned.
The thickness of the polymer in the vacuum chamber is detected to select the number of ion ejection toward the thickness direction of the polymer. If the vacuum chamber is made of glass materials, detecting a detection point of the chamber wall of the vacuum chamber through light emitted by a light source, and obtaining an optical detection polymer thickness result.
The vacuum chamber is connected with a pendulum valve, and the volatile substances generated in the reaction in the S2 are taken out of the vacuum chamber through the pendulum valve. It should be noted that the swing valve in the prior art has two control modes, which are pressure mode control and position mode control; position mode control, i.e., from closed to fully open, is preferably used in the present invention; and under the condition of being completely opened, the volatile substances generated by the reaction are taken out of the vacuum chamber by utilizing the process gas, so that the cleaning effect of the vacuum chamber is further improved, the vacuum chamber can normally work, and the yield of products is improved.
The invention provides an on-line cleaning method of a vacuum chamber, which is suitable for cleaning the vacuum chamber used in a coating process and polymers accumulated on the surface of a gas spray header on line; the process gas is ionized by applying radio frequency power to the vacuum chamber to generate high energy disordered plasma, and polymers on the inner wall of the vacuum chamber are removed by physical or chemical methods.
The plasma cleaning is carried out in a vacuum environment, equipment can be cleaned without stopping, the continuity of substrate production is ensured, and the equipment stopping maintenance frequency and the stopping cost are reduced.
In the prior art, the on-line cleaning process mostly adopts water-based cleaning agents, is toxic and harmful to human bodies, has large wastewater discharge amount and increases the environmental pressure; the reject ratio of the cleaned product reaches 8-30%, the feeding speed is 150mm/min when the cleaning is matched, the capacity is low, and the integral operation cost is high. Compared with the prior art, the scheme of the invention is more environment-friendly and safer, the substrate capacity is high, the reject ratio is as low as below 1%, and the overall operation cost is greatly reduced.
Example one
As shown in fig. 2, the present embodiment provides another vacuum chamber online cleaning method, which includes the following steps:
a1, when a vacuum chamber adopts PECVD coating, a polymer of a silicon film layer is formed on the inner wall of the vacuum chamber, and after a certain number of substrates are coated, a fluorine-containing compound is introduced to generate plasma;
a2, reacting with the silicon film layer through fluorine ions in the plasma;
and A3, pumping out residual compounds reacted by the silicon film layer in the vacuum chamber.
Example two
As shown in fig. 3, the present embodiment provides another vacuum chamber online cleaning method, including the following steps:
b1, when the vacuum chamber adopts an Al-2% Cu film by evaporation, the inner wall of the vacuum chamber is plated with a polymer of an Al-2% Cu film layer, after a certain number of substrates are coated, argon is introduced and plasma is generated, and the argon generates the plasma to bombard and remove copper in the polymer;
b2, introducing chlorine to generate plasma to remove aluminum in the polymer;
b3, pumping out the vacuum chamber to bombard the detached polymer.
Wherein the flow rate of the argon gas is 80-100 sccm, can be any value of 80-100, and is preferably 90 sccm; the flow rate of the chlorine gas is 10-30 sccm, which can be any value of 10-30 sccm, and is preferably 20 sccm.
In light of the foregoing description of the preferred embodiment of the present invention, it is to be understood that various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. A vacuum chamber online cleaning method is used for cleaning polymers accumulated on the surfaces of a vacuum chamber and a gas spray header used in a coating process online, and is characterized by comprising the following steps:
s1, introducing process gas into the vacuum chamber, applying a radio frequency power supply to the vacuum chamber, keeping for a period of time, and ionizing the process gas to generate high-energy disordered plasma;
s2, the plasma chemically reacts with the polymer on the inner wall of the vacuum chamber, or the plasma provides energy-carrying ions to bombard the surface of the polymer, so that atoms are ejected from the surface of the polymer;
s3, the polymer dropped out of the vacuum chamber is extracted.
2. The method of claim 1, wherein the method comprises: the process gas is a simple substance or compound of gas which reacts with the film substance.
3. The method of claim 1, wherein the method comprises: in S1, after a certain number of substrates are produced in the vacuum chamber, uniform plasma spraying without distinction, without dead angle, is automatically performed on the inner wall of the chamber.
4. The method of claim 1, wherein the method comprises: the power of the radio frequency power supply is 300-800W, and the holding time is 10-30 s.
5. The method of claim 1, wherein the method comprises: the thickness of the polymer in the vacuum chamber is detected to select the number of ion ejection toward the thickness direction of the polymer.
6. The method of claim 1, wherein the method comprises: the pressure of the vacuum chamber is 2-10 mT, and the free path of atoms in the plasma is changed by controlling different chamber pressures.
7. The method of claim 1, comprising the steps of:
a1, when a vacuum chamber adopts PECVD coating, a polymer of a silicon film layer is formed on the inner wall of the vacuum chamber, and after a certain number of substrates are coated, a fluorine-containing compound is introduced to generate plasma;
a2, reacting with the silicon film layer through fluorine ions in the plasma;
and A3, pumping out residual compounds reacted by the silicon film layer in the vacuum chamber.
8. The method of claim 1, comprising the steps of:
b1, when the vacuum chamber adopts a vapor deposition Al-2% Cu film, the inner wall of the vacuum chamber is coated with a polymer of an Al-2% Cu film layer, after a certain number of substrates are coated, argon is introduced and plasma is generated, and the argon is used for generating plasma bombardment to remove copper in the polymer;
b2, introducing chlorine to generate plasma to remove aluminum in the polymer;
b3, pumping out the vacuum chamber to bombard the peeled polymer.
9. The method of claim 8, wherein the method comprises: the flow rate of the argon gas is 80-100 sccm, and the flow rate of the chlorine gas is 10-30 sccm.
10. The method of claim 1, wherein the method comprises: and the vacuum chamber is connected with a swing valve, and when the swing valve is opened, the process gas is introduced into the S3 again, and the volatile substances generated by the reaction are taken out of the vacuum chamber by the process gas.
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| CN202111400214.4A CN114086154A (en) | 2021-11-24 | 2021-11-24 | Vacuum chamber online cleaning method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113201718A (en) * | 2021-04-01 | 2021-08-03 | 深圳仕上电子科技有限公司 | Plating chamber inner wall component with sacrificial layer, preparation method and cleaning method thereof |
| CN115584475A (en) * | 2022-10-28 | 2023-01-10 | 富联科技(兰考)有限公司 | Cleaning method of coating equipment and coating equipment |
| CN115584475B (en) * | 2022-10-28 | 2024-06-07 | 富联科技(兰考)有限公司 | Method for cleaning coating equipment and coating equipment |
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| CN101195117A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning reaction cavity |
| CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
| CN106920726A (en) * | 2015-12-24 | 2017-07-04 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and its cleaning method |
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- 2021-11-24 CN CN202111400214.4A patent/CN114086154A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101195117A (en) * | 2006-12-07 | 2008-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning reaction cavity |
| CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
| CN106920726A (en) * | 2015-12-24 | 2017-07-04 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and its cleaning method |
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