CN114077165A - Exposure apparatus and exposure method - Google Patents
Exposure apparatus and exposure method Download PDFInfo
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- CN114077165A CN114077165A CN202110265072.9A CN202110265072A CN114077165A CN 114077165 A CN114077165 A CN 114077165A CN 202110265072 A CN202110265072 A CN 202110265072A CN 114077165 A CN114077165 A CN 114077165A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides an exposure apparatus and an exposure method. In the maskless exposure device, even if a general-purpose photoresist with low sensitivity characteristic is used, a pattern can be formed properly. In an exposure apparatus (100), an illumination (I1), a single exposure time (t), the number of single exposures (4), and an incomplete multiple exposure operation (ME1, ME2, ME3) in which pattern light is the same are intermittently executed in 3 scans, and the operations are performed at the same interval for the same portion.
Description
Technical Field
The present invention relates to an exposure apparatus for patterning a substrate having a photoresist layer (photosensitive material) formed on a surface thereof, using an array of light modulation elements or the like.
Background
In a maskless exposure apparatus, pattern light is projected onto a substrate by an array of light modulation elements such as a DMD (Digital Micro-mirror Device) while moving a stage on which the substrate is mounted in a scanning direction. Here, the micromirrors are on/off controlled based on pattern data corresponding to the positions of projection areas (hereinafter, referred to as exposure areas) that move on the substrate along with the movement of the stage.
From the viewpoint of improving throughput, resolution, and the like, a multiple exposure operation is performed in which exposure regions during exposure operation are overlapped (see, for example, patent documents 1 and 2). In the period when the substrate moves at a constant speed, pattern light is projected at a predetermined interval so that the micro-exposure regions of the micromirrors overlap each other during an exposure operation.
During the passage of the exposure region, the cumulative amount of light on the substrate increases, exceeding the threshold at which the properties of the film of photosensitive material formed on the substrate change sharply, thereby forming a pattern. Further, by slightly inclining the arrangement direction of the DMDs with respect to the scanning direction (the stage moving direction), the distribution of the central positions (the exposure points) of the micro-exposure regions in the exposure region is dispersed.
Patent document 1: japanese patent laid-open publication No. 2018-36544
Patent document 2: japanese laid-open patent publication No. 2012 and 49433
In the case of a maskless exposure apparatus, in order to improve productivity, the exposure amount (illuminance) in 1 exposure operation (single exposure) is set higher than that of a contact exposure apparatus or the like. Further, the photoresist is also a photoresist having high sensitivity (low threshold) characteristics for a maskless exposure apparatus.
On the other hand, a general-purpose photoresist having a low sensitivity is also used in a maskless exposure apparatus for the reason that a cost reduction is required in recent years and the maskless exposure apparatus is replaced with a contact exposure apparatus. In this case, the characteristics of maskless exposure such as high-illuminance short-time exposure are not consistent with the reaction rate of general-purpose photoresists having low-sensitivity characteristics on the premise of long-time exposure under low illuminance, and thus, poor exposure such as a shape of a cross-sectional profile, a difference in gloss or insufficient curing of a surface portion of the photoresist, or the like is likely to occur.
Disclosure of Invention
Therefore, in the maskless exposure apparatus, it is desired that a pattern can be appropriately formed even when a general-purpose photoresist having low sensitivity characteristics is used.
The exposure apparatus of the present invention includes: a light modulation element array in which a plurality of light modulation elements are two-dimensionally arranged; a scanning unit that moves an exposure region of the light modulation element array relative to an exposure object having a photoresist layer formed on a surface thereof in a main scanning direction; and an exposure control unit that controls the light modulation element array and the scanning unit to perform multiple exposures of the exposure object at predetermined exposure intervals in the main scanning direction, wherein the exposure control unit performs multiple exposures (referred to as incomplete multiple exposures, herein) in which the cumulative exposure amount in 1 scan does not exceed an exposure sensitivity (threshold) of the photoresist at predetermined time intervals.
The exposure interval of the multiple exposure operation in 1 scan, the illuminance (light intensity) in a single exposure, the number of multiple exposures, the pattern, and the like are arbitrary. For example, the exposure control unit adjusts the exposure time or scanning speed of 1 time of incomplete multiple exposure and performs incomplete multiple exposure only for the number of times exceeding the exposure sensitivity of the photoresist on a predetermined exposure target region. Alternatively, the exposure control unit adjusts the illuminance at the time of 1 exposure in which multiple exposure is not completed, and performs only incomplete multiple exposure for a predetermined exposure target region by the number of times exceeding the exposure sensitivity of the photoresist.
The exposure control unit may perform uncompleted multiple exposures of a predetermined exposure target portion in the same pattern a plurality of times. Furthermore, incomplete multiple exposures can be performed on a predetermined exposure target portion a plurality of times by scanning in the same direction. The exposure control unit may control the light modulation element array such that the plurality of light modulation elements are modulated in the same operation control order, and unfinished multiple exposure for each scan is performed on a predetermined exposure target portion.
In the case of having a plurality of light modulation element arrays, the scanning section may cause the exposure region of each light modulation element array to perform reciprocating scanning through different scanning zones in the outward path and the return path. Multiple exposure operations can be performed on the same exposure target region at the same time interval in the scanning zone of each light modulation element array.
The exposure apparatus of the present invention includes: a light modulation element array in which a plurality of light modulation elements are two-dimensionally arranged; a scanning unit that moves an exposure region of the light modulation element array relative to an exposure object having a photoresist layer formed on a surface thereof in a main scanning direction; and an exposure control unit that controls the light modulation element array and the scanning unit so as to perform multiple exposures of the exposure object at predetermined exposure intervals in the main scanning direction, wherein the exposure control unit performs multiple exposures of a predetermined exposure target portion multiple times by multiple scanning. For example, a multiple exposure operation by multiple scanning may be performed so as to exceed a threshold corresponding to the exposure sensitivity or a threshold larger than the threshold.
In an exposure method according to one aspect of the present invention, an exposure region of an optical modulation element array in which a plurality of optical modulation elements are two-dimensionally arranged is moved in a main scanning direction relative to an exposure object having a photoresist layer formed on a surface thereof, and the optical modulation element array and a scanning unit are controlled so that multiple exposures are performed on the exposure object at predetermined exposure intervals in the main scanning direction, wherein multiple exposures by 1 scan are repeated on predetermined exposure target portions at predetermined time intervals. For example, the incomplete multiple exposure, which means that the cumulative exposure amount does not exceed the exposure sensitivity of the photoresist in 1 scan, is performed a plurality of times at prescribed time intervals.
In the substrate of the present invention formed by the above exposure method, the photoresist layer is formed with a stripe pattern in a direction along the surface on a cross section thereof. For example, the required exposure energy corresponding to the exposure sensitivity of the photoresist is 300mJ/cm2The above substrate is subjected to the above exposure method to form a pattern on the substrate.
According to the present invention, in the maskless exposure apparatus, even in the case of using a general-purpose photoresist having a low sensitivity characteristic, a pattern can be appropriately formed.
Drawings
Fig. 1 is a block diagram of an exposure apparatus according to embodiment 1.
Fig. 2 is a diagram showing a timing chart of the multiple exposure operation.
Fig. 3 is a diagram showing the scanning paths of a plurality of exposure heads.
Fig. 4 is a view schematically showing a cross section of the vicinity of the via portion after development.
Fig. 5 is a diagram showing a flow of the multiple exposure operation.
Fig. 6 is a diagram showing a timing chart of the multiple exposure operation according to embodiment 2.
Description of the reference symbols
10: an exposure head; 19: a table driving mechanism (scanning unit); 22: DMD (light modulation element array); 30: a controller (exposure control unit, scanning unit); 100: an exposure device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Fig. 1 is a block diagram of an exposure apparatus according to embodiment 1.
The exposure apparatus 100 is a maskless (direct) exposure apparatus that forms a pattern on a substrate W on the surface of which a layer of a photosensitive material such as a photoresist is formed, for example, a negative photoresist such as a solder resist ink is applied. The exposure apparatus 100 includes: a light source unit 20 including a plurality of discharge lamps (not shown); and a plurality of exposure heads 10 that project pattern light onto the substrates W, respectively. Here, only the light source section 20 and the exposure head 10 of one system are illustrated.
The exposure head 10 includes an illumination optical system 21, a DMD 22, and an imaging optical system 23, and the illumination optical system 21 is provided with an optical filter 25 for reducing the ultraviolet intensity in a specific wavelength region. The light source unit 20 is constituted by a discharge lamp (not shown) or the like that emits ultraviolet rays, and is driven by a light source driving unit 42.
When CAD/CAM data composed of vector data or the like is input to the exposure apparatus 100, the vector data is converted into raster data in the raster conversion circuit 26. The generated raster data is temporarily stored in a buffer memory (not shown), and then transmitted to the DMD drive circuit 24.
The DMD 22 is an optical modulation element array in which micro mirrors are two-dimensionally arranged, and each of the micro mirrors can selectively switch the reflection direction of light by changing the posture. The DMD drive circuit 24 outputs exposure data for on/off control of each micromirror, whereby light corresponding to a pattern is projected (imaged) onto the surface of the substrate W via the imaging optical system 23.
The controller (exposure control unit) 30 controls the light source driving unit 42, the filter driving unit 44, the DMD driving circuit 24, the stage driving mechanism 29, and the like to perform an exposure operation. Also, the controller 30 reads out information related to exposure from the memory 32. The stage drive mechanism 29 moves the exposure stage 18 on which the substrate W is mounted relative to the exposure head 10 in accordance with a control signal from the controller 30. The position detecting unit 27 calculates an exposure position of the surface of the substrate W based on a signal transmitted from the table driving mechanism 19. A direction along the movement path of the exposure table 18 is defined as a main scanning direction X, and a direction perpendicular to the movement path is defined as a sub-scanning direction Y.
During exposure, the exposure stage 18 moves at a constant speed in the main scanning direction X. The exposure area, which is the projection area of the entire DMD 22, moves relative to the substrate W in the main scanning direction X as the substrate W moves. The moving direction of the substrate W is slightly inclined with respect to the end edge of the exposure field along the main scanning direction X, which is the arrangement direction of the DMDs. Further, the inclination with respect to the main scanning direction X may not be small.
The controller 30 controls each micromirror of the DMD 22 according to the relative position of the exposure area to perform multiple exposure operations. That is, the exposure operation is performed at predetermined exposure intervals, the distribution of the central positions (exposure points) of the micro-exposure regions of the micromirrors is substantially uniformly distributed, and the pattern light is projected so as to overlap. The entire substrate W is subjected to multiple exposure operations by a plurality of exposure heads including the exposure head 10, thereby forming a pattern on the entire substrate W.
In the present embodiment, a multiple exposure operation is performed in which the cumulative exposure amount does not exceed the threshold value of the photosensitive material during 1 scan, that is, while the exposure region passes through the exposure target portion. Then, the multiple exposure operation is repeated for a plurality of scans. This will be described in detail below.
Fig. 2 is a diagram showing a timing chart of the multiple exposure operation. Fig. 3 is a diagram showing the scanning paths of a plurality of exposure heads. However, in fig. 3, for ease of explanation, the moving paths of the exposure areas of the two exposure heads are shown. In addition, the exposure region is not slightly inclined with respect to the main scanning direction X.
The multiple exposure operation ME1 shown in fig. 2 indicates the timing of the multiple exposure operation in which the exposure operation is continuously performed 4 times at predetermined exposure intervals while passing through the exposure target portions SA1 and SA2 shown in fig. 3. The exposure target portions SA1 and SA2 are arbitrary exposure target portions.
The irradiation period of 1 exposure (single exposure), that is, the period (period during which scanning is performed in a state where light is irradiated onto the exposure surface) t during which the micromirror is switched from off to on to scan light, and the illuminance I1 are determined so that the integrated exposure amount in 1 scan does not exceed the exposure sensitivity of the photoresist, that is, the exposure amount (hereinafter, also referred to as a threshold) necessary for pattern formation. Hereinafter, insufficient multiple exposure in which the photosensitivity necessary for the pattern formation of the photoresist is not achieved by 1 scan in the main scanning direction X is referred to as "incomplete multiple exposure".
As shown in fig. 3, the exposure areas EA1, EA2 reciprocate on the adjacent scan belts SB1, SB2 and scan belts SB3, SB4, respectively, with respect to the substrate W. After the exposure areas EA1 and EA2 have moved on the scan belts SB1 and SB3, the stage driving unit 29 moves the exposure stage 18 in the sub-scanning direction Y, and moves the exposure areas EA1 and EA2 in the opposite direction to the forward direction along the scan belts SB2 and SB4, respectively. After the exposure areas EA1 and EA2 reciprocate, the stage driving unit 29 moves the exposure areas EA1 and EA2 again along the scanning belts SB1 and SB 3.
When the exposure areas EA1, EA2 pass the exposure target portions SA1, SA2 of the scan bands SB1, SB3 again, the 2 nd incomplete multiple exposure operation ME2 (see fig. 2) is performed. The single exposure time, illuminance, and number of single exposures at this time are the same as the 1 st incomplete multiple exposure operation ME1, and the time interval corresponding to the exposure interval until the next single exposure is performed, the pattern light (pattern data), and the operation sequence (on/off control sequence) of the micromirrors of the DMD are also the same.
Then, the exposure area EA1 reciprocates (orbits) on the scan belts SB1, SB2, while the exposure area EA2 reciprocates (orbits) on the scan belts SB3, SB 4. When the exposure target positions SA1, SA2 are passed in the 3 rd scan, respectively, the 3 rd incomplete multi-exposure action ME3 is performed.
After performing a total of 3 incomplete multiple exposure actions ME1, ME2, ME3, the cumulative light amount of the exposure target sites SA1, SB2 exceeds the threshold value of the photoresist. As a result, a pattern is formed on the photoresist. Since the photoresist is negative, the ultraviolet irradiated portion is cured.
The illuminance I1, the single exposure time t, the number of single exposures (here, 4) are determined in such a manner that the cumulative light amount exceeds the threshold value of the photoresist by the incomplete multiple exposure actions ME1, ME2, ME 3. The photoresist used in this embodiment mode is a so-called general-purpose photoresist having sensitivity characteristics based on the use in a contact exposure apparatus, a proximity exposure apparatus, or the like, and the exposure energy (accumulated light amount) required for pattern formation is 300mJ/cm2～600mJ/cm2. This photoresist has a lower sensitivity (higher threshold) than a high-sensitivity photoresist used for a maskless exposure apparatus.
In fig. 2, a continuous irradiation operation CE0 of an integrated light amount required to exceed a threshold value of a photoresist in the case of using a contact exposure apparatus, a proximity exposure apparatus, or the like is shown by a broken line. The integrated light quantity of the uncompleted multiple exposure operations ME1, ME2, and ME3 executed 3 times is substantially equal to the integrated light quantity of the continuous irradiation operation CE0 shown by the broken line. The time until completion of light sensing based on the light amount of the continuous irradiation operation CE0 by continuous exposure in the contact exposure apparatus or the proximity exposure apparatus is about several seconds.
The multiple exposure action ME0 exceeding the threshold value of the photoresist in 1 scan in the exposure apparatus 100 is correspondingly also shown in fig. 2. The illuminance I1 for the incomplete multiple exposure is the same as the illuminance ME0, but the single exposure time t for the incomplete multiple exposure is shorter than the single exposure time t0 of ME 0. In addition, as a structure for shortening the single exposure time t, the micromirror on time may be adjusted, or the scanning speed may be increased to shorten the single exposure time t.
The scanning speeds of the exposure areas EA1, EA2 are constant in the outward path, and the movement of the exposure stage 18 in the sub-scanning direction Y is also moved at a constant speed. Therefore, the interval T1 from the 1 st incomplete multi-exposure action ME1 to the 2 nd incomplete multi-exposure action ME2 is equal to the interval T2 from the 2 nd incomplete multi-exposure action ME1 to the 3 rd incomplete multi-exposure action ME 2. Intervals T1 and T2 (several seconds to several tens of seconds) are longer than single exposure time T (several milliseconds) and time interval PT (several milliseconds) corresponding to the exposure interval.
Since the exposure target sites SA1 and SA2 are set to any sites of the substrate W, the exposure target sites of any of the scan bands SB1 and SB2 and scan bands SB3 and SB4 have the same single exposure time t, illuminance I1, the number of single exposures (4 times), and the time interval PT corresponding to the exposure interval, and have the same pattern and the same DMD operation (the same order of micromirror operation) and have the same interval, and have the same multiple exposure operation performed 3 times. By repeating the same unfinished multiple exposure operation for the same portion by the multiple scanning, a favorable pattern can be formed.
Fig. 4 is a view schematically showing a cross section of the vicinity of the via portion after development.
The via portions VP1 and VP2 are portions that are not irradiated with ultraviolet light and are dissolved and removed during development. The photoresist FR around the via hole VP is irradiated with ultraviolet rays and is insolubilized and cured. Via VP1 shown in fig. 4 (a) is a via formed by the multiple exposure operation ME0 shown in fig. 2, and via VP2 shown in fig. 4 (B) is a via formed by the completion of the multiple exposure operations ME1 to ME 3.
As shown in fig. 4 (a), when the via hole VP1 is formed by 1 multiple exposure operation, the via hole wall surface is tapered due to, for example, the extent of photopolymerization diffusion with increasing depth. Further, since the photoresist FR having a low sensitivity characteristic is subjected to a single exposure with a relatively high illuminance I1, a gloss or color development failure due to insufficient surface curing occurs, and only the surface portion is exposed excessively to cause cracks or the like.
On the other hand, as shown in fig. 4 (B), the photopolymerization reaction is stepwise generated a plurality of times (3 times) for the via hole VP2 formed by the completion of the multiple exposure operations ME1 to ME3, and the diffusion of the photopolymerization reaction due to the 1-time completion of the multiple exposure operation is suppressed. As a result, the via wall surface is not tapered but becomes a vertical wall surface. Further, since the single exposure time is short, the cumulative light amount of 1 incomplete multiple exposure operation is suppressed, and thus defects such as a resist surface appearance or a pattern shape are not generated.
Further, as a history of stepwise generation of photopolymerization reaction, a stripe pattern M is formed in a lateral direction (surface direction) in a cross section of the photoresist. In order to uniformly generate such a stripe pattern M on the entire substrate, a cyclic reciprocating scanning method is employed, and the time interval during which multiple exposure operations are not completed is made constant.
Fig. 5 is a diagram showing a flow of the multiple exposure operation.
The exposure apparatus 100 loads exposure setting information such as exposure data and CAD/CAM data to the controller 30, and then a conveyance device (not shown in fig. 1) mounts the substrate on the exposure table 18(S101, S102). After the illuminance adjustment, the exposure apparatus 100 measures the alignment mark position, and measures the position and deformation of the substrate W (S103 and S104). Then, the controller 30 corrects the exposure data based on the alignment mark information (S105), performs multiple scanning by driving control of the stage driving mechanism 29, and repeats the unfinished multiple exposure operation by control of the DMD driving circuit 24 (S106). When the drawing of the entire substrate W is completed, the substrate W is replaced with the next substrate (S107).
In this way, according to the present embodiment, in the exposure apparatus 100, the unfinished multiple exposure operations ME1, ME2, and ME3 in which the illuminance I1, the single exposure time t, the single times (4 times), and the pattern light are the same are intermittently executed in 3 scans and are performed at the same interval for the same portion.
By performing multiple exposure operations corresponding to a low-sensitivity photoresist on the premise of a contact exposure apparatus, a pattern can be formed well even for a low-sensitivity photoresist. Further, by performing multiple scans at an increased scanning speed, it is possible to suppress a reduction in throughput even when the same portion is subjected to multiple exposure operations.
Instead of the structure in which the exposure region is reciprocated along the adjacent scan belt, the exposure region may be reciprocated on the same scan belt. In this case, since the exposure operation is not performed in the circuit, the unfinished multiple exposure operation can be performed at the same interval.
The single exposure time, the number of exposures, the illuminance, the number of times of the multiple exposure operation is not completed, and the like may be determined as appropriate in accordance with the sensitivity characteristics of the photoresist and the like. In addition, positive photoresists can also be applied.
Next, embodiment 2 will be described with reference to fig. 6. In embodiment 2, the illuminance at the time of a single exposure is suppressed.
Fig. 6 is a diagram showing a timing chart of the multiple exposure operation according to embodiment 2.
The number of single exposures for each of the incomplete multiple exposure operations ME1 'to ME3' is the same as that of embodiment 1 (4), but the exposure is performed at an illuminance I2 lower than the illuminance I1 of embodiment 1. The illuminance I2 corresponds to an illuminance set in a contact exposure apparatus, a proximity exposure apparatus, or the like. On the other hand, the single exposure time t' is longer than that of the first embodiment. The intervals T1 'and T2' for performing incomplete multiple exposure operations ME1 'to ME3' are equal. By suppressing the illuminance at the time of 1 exposure in this way, a stepwise photopolymerization reaction can be caused in the photoresist.
In embodiments 1 and 2, the number of times of the incomplete multiple exposure operation is determined so that the cumulative exposure amount exceeds the exposure sensitivity of the photoresist, that is, the exposure amount necessary for pattern development. However, in the case of a negative photoresist, a multiple exposure operation may be required to provide an integrated exposure amount necessary for sufficiently curing the resist in addition to exceeding the exposure sensitivity. In this case, the number of times of the multiple exposure operation is not completed may be set to a larger number of times according to the value exceeding the threshold. Further, even when the exposure sensitivity is exceeded by the 1-time multiple exposure operation, sufficient curing of the resist can be achieved by configuring to repeat the multiple exposure operation by a plurality of scans of the same portion.
Claims (12)
1. An exposure apparatus, characterized in that,
the exposure apparatus includes:
a light modulation element array in which a plurality of light modulation elements are two-dimensionally arranged;
a scanning unit that moves an exposure region of the light modulation element array relative to an exposure object having a photoresist layer formed on a surface thereof in a main scanning direction; and
an exposure control unit that controls the light modulation element array and the scanning unit so as to perform multiple exposures of the exposure object at predetermined exposure intervals in a main scanning direction,
the exposure control section performs an incomplete multiple exposure, which is an exposure sensitivity of the photoresist having a cumulative exposure amount not exceeding the photoresist layer in 1 scan, a plurality of times at predetermined time intervals.
2. The exposure apparatus according to claim 1,
the exposure control unit performs unfinished multiple exposure on a predetermined exposure target portion in the same pattern a plurality of times.
3. The exposure apparatus according to claim 2,
the exposure control unit performs incomplete multiple exposures on a predetermined exposure target portion a plurality of times by scanning in the same direction.
4. The exposure apparatus according to claim 3,
the exposure control unit controls the light modulation element array so that the plurality of light modulation elements are modulated in the same operation control order, and unfinished multiple exposure is performed for each scan on a predetermined exposure target portion.
5. The exposure apparatus according to claim 1,
the exposure apparatus has a plurality of arrays of light modulation elements,
the scanning section causes the exposure regions of the respective light modulation element arrays to perform reciprocating scanning through different scanning zones in the outward path and the return path.
6. The exposure apparatus according to any one of claims 1 to 5,
the exposure control unit adjusts the exposure time or scanning speed of 1 time of incomplete multiple exposure to perform incomplete multiple exposure only for the number of times exceeding the exposure sensitivity of the photoresist on a predetermined exposure target region.
7. The exposure apparatus according to any one of claims 1 to 5,
the exposure control unit adjusts the illuminance at the time of 1 exposure in which multiple exposure is not completed, and performs only incomplete multiple exposure for a predetermined exposure target region by the number of times exceeding the exposure sensitivity of the photoresist.
8. An exposure apparatus, characterized in that,
the exposure apparatus includes:
a light modulation element array in which a plurality of light modulation elements are two-dimensionally arranged;
a scanning unit that moves an exposure region of the light modulation element array relative to an exposure object having a photoresist layer formed on a surface thereof in a main scanning direction; and
an exposure control unit that controls the light modulation element array and the scanning unit so as to perform multiple exposures of the exposure object at predetermined exposure intervals in a main scanning direction,
the exposure control unit performs multiple exposures of a predetermined exposure target region multiple times by multiple scans.
9. A method for exposing a light source to light,
an exposure region of a light modulation element array in which a plurality of light modulation elements are two-dimensionally arranged is moved relative to an exposure object having a photoresist layer formed on a surface thereof in a main scanning direction,
controlling the light modulation element array and the scanning unit to perform multiple exposures of the exposure object at predetermined exposure intervals in a main scanning direction,
it is characterized in that the preparation method is characterized in that,
multiple exposures by 1 scan are repeated at predetermined time intervals on a predetermined exposure target portion.
10. The exposure method according to claim 9,
the incomplete multiple exposure, which is an exposure sensitivity of the photoresist having a cumulative exposure amount not exceeding the photoresist layer in 1 scan, is performed a plurality of times at prescribed time intervals.
11. A substrate on which a photoresist layer on a surface is formed with a pattern by the exposure method according to claim 9 or 10,
the photoresist layer is formed with a stripe pattern in a direction along a surface on a cross section thereof.
12. The substrate of claim 11,
the required exposure energy corresponding to the exposure sensitivity of the photoresist layer is 300mJ/cm2The above.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-139243 | 2020-08-20 | ||
| JP2020139243A JP7471175B2 (en) | 2020-08-20 | 2020-08-20 | Exposure apparatus and exposure method |
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| CN114077165A true CN114077165A (en) | 2022-02-22 |
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| JP (1) | JP7471175B2 (en) |
| KR (1) | KR20220023285A (en) |
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| CN115268223A (en) * | 2022-07-15 | 2022-11-01 | 广东工贸职业技术学院 | Male die photoetching method, system and device for microfluidic chip and chip manufacturing method |
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|---|---|---|---|---|
| US7186486B2 (en) | 2003-08-04 | 2007-03-06 | Micronic Laser Systems Ab | Method to pattern a substrate |
| JP2005338667A (en) | 2004-05-31 | 2005-12-08 | Fuji Photo Film Co Ltd | Pattern forming method |
| JP2007316473A (en) | 2006-05-29 | 2007-12-06 | Orc Mfg Co Ltd | Drawing system |
| KR20120049433A (en) | 2010-11-08 | 2012-05-17 | 한국전자통신연구원 | Limiting amplifier for bandwidth enhancement |
| JP6439291B2 (en) | 2014-06-25 | 2018-12-19 | 日立化成株式会社 | Photosensitive resin composition, photosensitive element, semiconductor device, and method for forming resist pattern |
| JP6818393B2 (en) | 2016-09-01 | 2021-01-20 | 株式会社オーク製作所 | Exposure device |
| JP7120243B2 (en) * | 2017-09-08 | 2022-08-17 | 株式会社ニコン | pattern drawing device |
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2020
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2021
- 2021-02-19 KR KR1020210022385A patent/KR20220023285A/en active Search and Examination
- 2021-02-25 TW TW110106647A patent/TWI847015B/en active
- 2021-03-11 CN CN202110265072.9A patent/CN114077165A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115268223A (en) * | 2022-07-15 | 2022-11-01 | 广东工贸职业技术学院 | Male die photoetching method, system and device for microfluidic chip and chip manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022035137A (en) | 2022-03-04 |
| JP7471175B2 (en) | 2024-04-19 |
| TWI847015B (en) | 2024-07-01 |
| TW202208997A (en) | 2022-03-01 |
| KR20220023285A (en) | 2022-03-02 |
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