CN114072924A - 制造防止触电死亡的短路二极管的方法 - Google Patents

制造防止触电死亡的短路二极管的方法 Download PDF

Info

Publication number
CN114072924A
CN114072924A CN202080029429.7A CN202080029429A CN114072924A CN 114072924 A CN114072924 A CN 114072924A CN 202080029429 A CN202080029429 A CN 202080029429A CN 114072924 A CN114072924 A CN 114072924A
Authority
CN
China
Prior art keywords
diode
current
silicon crystal
crystal diode
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080029429.7A
Other languages
English (en)
Inventor
约翰·杰罗·帕切科·佩纳
豪尔赫·路易斯·希门尼斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yakob Industry Co ltd
Original Assignee
Yakob Industry Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yakob Industry Co ltd filed Critical Yakob Industry Co ltd
Publication of CN114072924A publication Critical patent/CN114072924A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609Diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326Application of electric currents or fields, e.g. for electroforming
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/14Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Electronic Switches (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Electrotherapy Devices (AREA)

Abstract

一种制造短路二极管的方法,所述短路二极管改变通过该短路二极管的电流的特性,使得电流在通过二极管之后不会伤害接触该电流的人。

Description

制造防止触电死亡的短路二极管的方法
技术领域
本发明是一种制造短路二极管的方法,该短路二极管改变通过二极管的电流的特性,使得电流在通过二极管之后不会伤害接触电流的人。
通过非凡的干预构思了本发明,因为发明人在接触通过110伏交流电的带电导线时没有被电死。
背景技术
在2011年,本发明的发明人之一检查无线电设备的其中一个电路中的故障。当用万用表检查无线电设备的电容器时,他意外地触碰了万用表的端子,并感觉到中度电击。他没有太注意该电击,因为他认为电容器被损坏了。他继续检查无线电设备的焊接和/或错误接触,并且他再次粗心地使他自己受到电击。在第二次事故之后,他注意到他受到的电击是中度电击。他检查无线电设备的电压并认识到它是110伏的读数。令他意外的是,他没有触电死亡并且他好奇地开始触碰无线电设备的其它放电的电子部件。再次,令他惊喜的是,他在触碰无线电设备的电路时仅感觉到中度电击。在检查无线电设备的电路之后,他认识到无线电设备中的故障是二极管,并且他更换了二极管。
第二天,他的好奇心战胜了他,他再次测试了具有相同电压的二极管的连接。他再次用万用表测试二极管,并且二极管被短路。他再次触碰端子并感觉到中度的电击。他认识到,当他触碰承载110伏交流电的带电导线时,短路的二极管以某种方式减小了他应该受到的电击。他关于对短路的二极管的经验使他调查是什么防止他触电死亡。他认识到短路的二极管对通过二极管的电流的电特性有某些影响,使得通过二极管的电流不会使接触该电流的人触电死亡。
在2018年,发明人的儿子将在学校中提出与电相关的项目。该项目是建立特斯拉线圈,并且发明人希望帮助他的儿子进行该项目。他的儿子害怕进行实验,因为他害怕触电死亡。发明人告诉他儿子不要害怕进行实验,因为通过将他的本发明安装在系统中,他将确保他儿子不会被通过系统的电电击。他的儿子不信任他。
然后,发明人与第二发明人进行讨论,他们都认识到,如果他们能够重新生产短路的二极管,则他们能够通过防止人触电死亡来挽救生命。在大量反复试验之后,发明人开发了一种制造本发明的方法。该方法生产短路二极管,该短路二极管似乎改变了通过短路二极管的电流的电特性,使得电流不会伤害接触电流的人。
由于上述原因,需要一种制造短路二极管的方法,该短路二极管将改变通过二极管的电流的特性,使得接触电流的人不会触电死亡。
发明内容
本发明描述了一种制造短路二极管的方法,该短路二极管改变通过它的电流的特性,使得电流在通过短路二极管之后不伤害接触电流的人。
短路二极管是使用包括以下步骤的方法制造的:首先设置具有两个端子的硅晶体二极管,确定硅晶体二极管的电流额定值,设置热风枪或类似的加热装置,设置万用表,设置将提供电荷的电子器件,以及将万用表连接到二极管的端子。然后用加热装置加热二极管的主体,直到二极管的阻抗低于一欧姆。在阻抗低于一欧姆时,然后将电子器件的多个低电压电荷放电到硅晶体二极管的端子之一上,直到硅晶体二极管短路并且硅晶体二极管的电流被重新校准到低于五欧姆,其中所述多个低电压电荷的电流是硅晶体二极管的电流额定值的大约两倍。
最后,通过用万用表测量硅晶体二极管的特性,确保硅晶体二极管短路,且在硅晶体二极管冷却之后硅晶体二极管的电流低于五欧姆。
本发明的目的是提供一种短路二极管,该短路二极管改变了通过它的电的特性,使得它不会使接触电流的人触电死亡。
本发明的另一个目的是防止接触具有结合在装置内的短路二极管的电装置的人死亡。
附图说明
具体实施方式
本发明是一种短路二极管,该短路二极管改变通过它的电流的特性,使得它不会使接触电流的人触电死亡。该短路二极管通过包括以下步骤的方法制备:设置具有两个端子的硅晶体二极管;确定硅晶体二极管的电流额定值;设置热风枪或类似的加热装置;设置万用表;设置将提供电荷的电子器件;将万用表连接到二极管的端子;用加热装置加热二极管的主体,直到二极管的阻抗低于一欧姆;当阻抗低于一欧姆时,然后将电子器件的多个低电压电荷放电到硅晶体二极管的端子之一上,直到硅晶体二极管短路并且硅晶体二极管的电流被重新校准到低于五欧姆,其中所述多个低电压电荷的电流是硅晶体二极管的电流额定值的大约两倍;以及通过用万用表测量硅晶体二极管的特性,确保硅晶体二极管短路,且在硅晶体二极管冷却后硅晶体二极管的电流低于五欧姆。
当电流可以在任一方向上通过二极管时,硅晶体二极管被短路。
短路二极管以某种方式防止接触通过它的电流的人触电死亡。发明人不能确定或限定电流的特性如何改变并且不能相信科学界将及时确定该现象。
发明人相信,使用本发明的短路二极管将保存通过短路二极管下游的电导体传输的能量,因为他们推论电导体将不会加热到与通过未短路的二极管时电导体将加热的水平相同的水平。
发明人还相信,使用本发明的短路二极管将开发或改进使用电流来治疗疾病的电医疗装置。
本发明的优点在于,其提供了一种短路二极管,该短路二极管改变通过它的电(110伏至220伏特范围内的交流电)的特性,使得它不会使接触该电流的人触电死亡。
本发明的另一个优点是,它防止人因接触具有短路二极管的电装置而死亡。
虽然发明人的以上描述包含许多细节,但是这些不应被解释为对范围的限制,而应被解释为对其若干优选实施例的例示。因此,范围不应由示出的实施例确定,而是由所附权利要求及其法律等同物确定。

Claims (1)

1.一种短路二极管,所述短路二极管改变通过所述短路二极管的电流的特性,使得所述短路二极管不使接触电流的人触电死亡,所述短路二极管通过包括以下步骤的方法制备/制造:
设置具有两个端子的硅晶体二极管;
确定所述硅晶体二极管的电流额定值;
设置热风枪或类似的加热装置;
设置万用表;
设置将提供电荷的电子器件;
将所述万用表连接到所述二极管的所述端子;
用所述加热装置加热所述二极管的主体,直到所述二极管的阻抗低于一欧姆;
当所述阻抗低于一欧姆时,然后将所述电子器件的多个低电压电荷放电到所述硅晶体二极管的端子之一上,直到所述硅晶体二极管短路并且所述硅晶体二极管的电流被重新校准到低于五欧姆,其中所述多个低电压电荷的电流是所述硅晶体二极管的所述电流额定值的大约两倍;以及
通过用万用表测量所述硅晶体二极管的特性,确保所述硅晶体二极管短路并且在所述硅晶体二极管冷却之后所述硅晶体二极管的电流低于五欧姆。
CN202080029429.7A 2019-02-20 2020-02-18 制造防止触电死亡的短路二极管的方法 Pending CN114072924A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/281,082 US10756201B1 (en) 2019-02-20 2019-02-20 Process of making a short-circuited diode that prevents electrocution
US16/281,082 2019-02-20
PCT/US2020/018533 WO2020172104A1 (en) 2019-02-20 2020-02-18 A process of making a short-circuited diode that prevents electrocution

Publications (1)

Publication Number Publication Date
CN114072924A true CN114072924A (zh) 2022-02-18

Family

ID=72040702

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080029429.7A Pending CN114072924A (zh) 2019-02-20 2020-02-18 制造防止触电死亡的短路二极管的方法

Country Status (7)

Country Link
US (1) US10756201B1 (zh)
EP (1) EP3928355A4 (zh)
CN (1) CN114072924A (zh)
CA (1) CA3131147A1 (zh)
CO (1) CO2021011856A2 (zh)
MX (1) MX2021010047A (zh)
WO (1) WO2020172104A1 (zh)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217621A (en) * 1978-09-22 1980-08-12 General Motors Corporation Circuit for detecting diode shorting
CA1162611A (en) * 1978-12-15 1984-02-21 Shohichi Kamata Diode faults detecting apparatus
US5578936A (en) * 1995-01-23 1996-11-26 Fluke Corporation Method and apparatus for automatically testing semiconductor diodes
US7652480B2 (en) * 2007-04-26 2010-01-26 General Electric Company Methods and systems for testing a functional status of a light unit
US9160164B2 (en) * 2010-03-02 2015-10-13 Accumetrics, Inc. Method and apparatus for fault detection of series diodes in rectifiers
EP2878964B8 (en) * 2013-12-02 2016-09-21 ABB Schweiz AG Detecting shorted diodes
US9829511B1 (en) * 2015-09-14 2017-11-28 The United States Of America As Represented By The Secretary Of The Navy Diode checker

Also Published As

Publication number Publication date
MX2021010047A (es) 2021-11-18
EP3928355A4 (en) 2023-03-08
US20200266283A1 (en) 2020-08-20
WO2020172104A1 (en) 2020-08-27
EP3928355A1 (en) 2021-12-29
CA3131147A1 (en) 2020-08-27
CO2021011856A2 (es) 2022-01-17
US10756201B1 (en) 2020-08-25

Similar Documents

Publication Publication Date Title
US3141128A (en) Apparatus for testing portable equipment for a. c. and d. c. leakage and for ground continuity
CN104364114B (zh) 用于测量接地电阻的装置以及用于装备有这样的装置的车辆的车载充电器
US20160254616A1 (en) Power supply system having magnetic connector
CN108318827A (zh) 漏液检测装置、系统及电动车
CN110726876A (zh) 绝缘电阻检测装置
US20140152335A1 (en) Continuous broken sense lead detection system
CN113167822A (zh) 电子装置间的联接的自动检测装置
US20140292353A1 (en) Line impedance stabilization network
CN114072924A (zh) 制造防止触电死亡的短路二极管的方法
US20130163141A1 (en) Input circuit for alternating current signal, and motor starter including the same
US11011793B2 (en) Protection of an electrical energy accumulation device
US20170340892A1 (en) Defibrillator Electrode Identification System
JP5867769B1 (ja) 電源装置、電子機器、および電子機器システム
JP5896192B1 (ja) 電源装置、電子機器および電子機器システム
CN208862227U (zh) 一种usb插座、usb插头、数据线及移动终端
CN106299941A (zh) 互感器二次端子快速短接装置
CN104714098A (zh) 配电系统的绝缘阻抗测试装置
CN108254600B (zh) 电能表
CN209764949U (zh) 一种用于测试电动汽车高压电路绝缘电阻的装置
CN112415252A (zh) 一种电源插头残余电压的测量方法和计算机设备
EP3569441A1 (en) Method for controlling a charging process of an electric vehicle and charging cable
CN208127914U (zh) 电池正反接处理装置
JP2018040607A (ja) 検出回路及び蓄電パック
TW202422087A (zh) 電迴路線路檢測裝置
FR2370983A1 (fr) Montage pour la verification du conducteur de protection d'un montage de protection contre le courant de fuite

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination