CN114065434B - Method for analyzing deformation of film reflecting surface of electrostatically formed film antenna - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004458 analytical method Methods 0.000 claims abstract description 23
- 230000008878 coupling Effects 0.000 claims abstract description 22
- 238000010168 coupling process Methods 0.000 claims abstract description 22
- 238000005859 coupling reaction Methods 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims description 99
- 239000010408 film Substances 0.000 claims description 97
- 239000000463 material Substances 0.000 claims description 22
- 230000005686 electrostatic field Effects 0.000 claims description 13
- 230000011218 segmentation Effects 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 description 4
- 239000004243 E-number Substances 0.000 description 2
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- H—ELECTRICITY
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- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/14—Reflecting surfaces; Equivalent structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
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Abstract
The invention discloses a deformation analysis method of a film reflecting surface of an electrostatic formed film antenna, which comprises the following steps: the method comprises the steps of obtaining geometrical parameters of an electrode face and a film reflecting face of an electrostatic formed film reflecting face antenna, respectively establishing the electrode face, the film reflecting face and a geometrical model formed by combining the electrode face and the film reflecting face according to the geometrical parameters of the electrode face and the film reflecting face, carrying out finite element mesh division on the geometrical model formed by combining the electrode face and the film reflecting face by utilizing an electrostatic-structure coupling unit, carrying out finite element mesh division on the geometrical model of the film reflecting face by utilizing a film unit, establishing a finite element analysis model by utilizing the divided finite element mesh and the finite element mesh of the film reflecting face, and carrying out deformation analysis on the film reflecting face by utilizing the finite element analysis model according to initial conditions and boundary conditions. The method can be used for carrying out high-precision and high-efficiency deformation analysis on the film reflecting surface of the electrostatic formed film reflecting surface antenna.
Description
Technical Field
The invention relates to the technical field of radar antennas, in particular to a method for analyzing deformation of a film reflecting surface of an electrostatic formed film antenna.
Background
In the analysis of deformation of an electrostatically formed film reflecting surface antenna, the coupling problem between the deformation of the film reflecting surface and the electric field distribution of an electrostatic field is involved, and two general solutions exist at present: one is to calculate the deformation of the thin film reflecting surface by directly using a plate capacitance formula to calculate the electrostatic force applied to the thin film reflecting surface assuming that the coupling degree between the deformation of the thin film reflecting surface and the electrostatic field is very low; the other method is to calculate the deformation of the reflecting surface of the film and the potential of the electrostatic field respectively, and then establish the coupling relation between the deformation of the reflecting surface of the film and the electrostatic field by using a physical environment method. The former performs approximate treatment on the calculation of the electrostatic force, and is not suitable for the situation that the distance between the reflecting surface of the film and the electrode surface is greatly changed; the latter can calculate the deformation of the reflecting surface of the film with high precision, but the calculation efficiency is lower due to the adoption of the two-field mutual iteration method. According to the invention, the deformation of the thin film reflecting surface is solved by using the electrostatic-structure coupling unit, so that the results of the deformation of the thin film reflecting surface and the potential of the electrostatic field can be obtained simultaneously, and the calculation precision and the calculation efficiency can be ensured.
Disclosure of Invention
The embodiment of the invention provides a thin film reflecting surface deformation analysis method of an electrostatic formed thin film antenna, which comprises the following steps:
acquiring geometrical parameters of an electrode surface and a thin film reflecting surface of the electrostatic formed thin film reflecting surface antenna;
respectively establishing an electrode surface, a thin film reflecting surface and a geometric model formed by combining the electrode surface and the thin film reflecting surface into a whole according to the geometric parameters of the electrode surface and the thin film reflecting surface;
utilizing an electrostatic-structure coupling unit to divide a finite element mesh of a geometric model formed by combining electrode surfaces and film reflecting surfaces into a whole;
performing finite element mesh division on the geometric model of the film reflecting surface by utilizing the film unit;
establishing a finite element analysis model by utilizing the divided finite element grids and the finite element grids of the film reflecting surface;
and according to the initial conditions and the boundary conditions, performing deformation analysis on the thin film reflecting surface by using a finite element analysis model.
Further, establishing the electrode face, the thin film reflecting face and the geometric model formed by combining the electrode face and the thin film reflecting face into a whole respectively comprises:
generating central key point coordinates (0, 0) of the film reflecting surface, and three-dimensional space coordinates of circumferential and radial key points of the film reflecting surface:
generating central key point coordinates (0, -H) of the electrode surface, and three-dimensional space coordinates of the circumferential and radial key points of the electrode surface:
connecting key points of the thin film reflecting surface to the generating surface by utilizing a triangle topological connection relationship, and constructing a geometric model of the thin film reflecting surface;
connecting the key points of the electrode surface to generate a surface by utilizing a triangle topological connection relationship, and constructing a geometric model of the electrode surface;
and sealing the boundary of the electrode surface and the boundary of the film reflecting surface by using surfaces, and bonding the generated body to construct an integral geometric model.
Further, the finite element meshing of the geometric model formed by the electrode surface and the thin film reflecting surface into a whole by using the electrostatic-structure coupling unit comprises the following steps:
and carrying out finite element mesh division on a geometric model formed by combining the electrode surface and the thin film reflecting surface into a whole by utilizing a four-node tetrahedron electrostatic-structure coupling unit.
Further, performing finite element meshing of the geometric model of the thin film reflective surface with the thin film unit includes:
and performing finite element mesh division on the geometric model of the film reflecting surface by using a three-node triangle film unit.
Further, the initial conditions include:
each thin film unit in the thin film reflecting surface applies uniform prestressing force,
σ 0 ＝[σ x σ y 0] T
wherein sigma x Represents the stress value, sigma, in the x direction of the film unit y The y-direction stress value of the thin film unit is shown.
Further, the boundary conditions include: structural boundary conditions and electrostatic field boundary conditions.
Further, the structural boundary conditions include:
and constraining three displacement degrees of freedom of boundary nodes of the thin film reflecting surface and all nodes on the electrode surface.
Further, the electrostatic field boundary conditions include:
the voltage value of the film reflecting surface is set to be 0V, and the electrode surface is provided with corresponding voltage values U= [ U ] according to different voltage channels 1 U 2 … U NU ] T Where NU is the number of voltage channels.
Further, the film reflective surface geometry includes: the caliber, focal length and radial segmentation number and annular segmentation number of the film reflecting surface;
electrode face geometry parameters, including: the aperture of the electrode surface, the focal length, the radial segmentation number of the electrode surface, the annular segmentation number and the distance between the central key point of the electrode surface and the central key point of the film reflecting surface;
film unit material parameters, including: mass density, elastic modulus, poisson ratio, thickness, coefficient of thermal expansion;
an electrostatic-structural coupling unit material parameter comprising: vacuum dielectric constant, relative dielectric constant, elastic modulus, poisson's ratio.
The embodiment of the invention provides a thin film reflecting surface deformation analysis method of an electrostatic formed thin film antenna, which has the following beneficial effects compared with the prior art:
the finite element modeling method of the electrostatic formed film reflecting surface antenna based on the electrostatic-structure coupling unit provided by the invention can calculate the deformation and electrostatic field distribution of the film reflecting surface with high precision and high efficiency, and provides a theoretical basis for optimizing the electrode voltage of the electrostatic formed film reflecting surface antenna and designing the surface shape of the film reflecting surface.
Drawings
FIG. 1 is a general flow chart of a method for analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna according to an embodiment of the present invention;
FIG. 2 is a flow chart of geometrical modeling parameters and material parameters of a method for analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna according to an embodiment of the present invention;
FIG. 3 is a flow chart of a method for analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna according to an embodiment of the present invention;
FIG. 4 is a flow chart illustrating the mesh division of the electrostatic formed thin film reflector antenna according to the method for analyzing deformation of the thin film reflector of the electrostatic formed thin film antenna according to the embodiment of the present invention
FIG. 5 is a flow chart of finite element solution for given film prestress and structure and electrostatic field boundary conditions of a film reflecting surface deformation analysis method of an electrostatically formed film antenna according to an embodiment of the present invention;
FIG. 6 is a geometric diagram of an electrode surface of an electrostatic formed thin film reflector antenna according to the method for analyzing deformation of a thin film reflector of an electrostatic formed thin film antenna according to an embodiment of the present invention;
FIG. 7 is a diagram showing the geometry of the thin film reflecting surface of an electrostatic formed thin film antenna according to the method for analyzing deformation of the thin film reflecting surface of an electrostatic formed thin film antenna according to an embodiment of the present invention;
FIG. 8 is a three-dimensional view of an electrostatic formed thin film reflector antenna according to the method for analyzing deformation of thin film reflectors of an electrostatic formed thin film antenna according to an embodiment of the present invention;
FIG. 9 is a deformation cloud chart of a thin film reflecting surface obtained by using a physical environment method according to the deformation analysis method of the thin film reflecting surface of the electrostatic formed thin film antenna provided by the embodiment of the invention;
fig. 10 is a deformation cloud chart of a thin film reflecting surface obtained by a thin film reflecting surface deformation analysis method of an electrostatically formed thin film antenna according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 to 10, an embodiment of the present invention provides a method for analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna, the method comprising:
the method comprises the steps of obtaining geometric parameters and material parameters of an electrode surface of an electrostatic formed film reflecting surface antenna, obtaining geometric parameters and material parameters of a film reflecting surface of the electrostatic formed film reflecting surface antenna, respectively establishing an electrode surface geometric model, a film reflecting surface geometric model and a geometric model formed by combining the electrode surface and the film reflecting surface into a whole according to the geometric parameters of the electrode surface and the film reflecting surface, carrying out finite element mesh division on the geometric model formed by combining the electrode surface and the film reflecting surface by utilizing an electrostatic-structure coupling unit, endowing the geometric model with corresponding material attributes, carrying out finite element mesh division on the geometric model of the film reflecting surface by utilizing a film unit, endowing the geometric model with corresponding material attributes, and establishing a finite element analysis model by utilizing the finite element mesh of the geometric model formed by combining the electrode surface and the film reflecting surface into the whole and the finite element mesh of the geometric model formed by dividing the electrode surface and the film reflecting surface;
and according to the initial conditions and the boundary conditions, performing deformation analysis on the thin film reflecting surface by using a finite element analysis model.
The finite element modeling method of the electrostatic formed film reflecting surface antenna based on the electrostatic-structure coupling unit comprises the following steps:
giving geometrical modeling parameters and material parameters of the electrostatic formed film reflecting surface antenna;
2) Establishing key points of the electrode surface and the thin film reflecting surface according to geometric modeling parameters, generating a surface by the key points, and finally sealing the boundary of the electrode surface and the boundary of the thin film reflecting surface by using the surface, and bonding to generate a body;
3) Grid division is carried out on the body by utilizing the electrostatic-structure coupling unit, and grid division is carried out on the film reflecting surface by utilizing the film unit;
4) And (5) giving the film prestress, the structure boundary condition and the electrostatic field boundary condition, and carrying out deformation analysis on the film reflecting surface.
Fig. 1 is a general flow chart of an electrostatic formed film reflecting surface antenna finite element modeling method based on an electrostatic-structure coupling unit according to an embodiment of the present invention.
As shown in fig. 2, the given electrostatic formed thin film reflector antenna geometric modeling parameters and material parameters specifically relate to the following steps:
(1) Given geometrical parameters of the film reflecting surface, including the caliber D of the film reflecting surface m Focal length f m Radial segment number N of film reflecting surface rm Number of circumferential segments N hm ；
(2) Given electrode face geometry parameters, including electrode face caliber D e Focal length f e Number of radial segments of electrode surface N re Number of circumferential segments N he The distance H between the central key point of the electrode surface and the central key point of the film reflecting surface;
(3) Given the film unit material parameters: mass density 1432kg/m 3 Elastic modulus 1.67GPa, poisson's ratio 0.34, thickness 26.5 μm, thermal expansion coefficient 29×10 -6 /℃；
(4) Given the electrostatic-structural coupling unit material parameters: vacuum dielectric constant 8.85×10 -12 F/m, relative dielectric constant 1.0, elastic modulus 0GPa, poisson's ratio 0.
As shown in fig. 3, the key points of the electrode surface and the thin film reflecting surface are established according to the geometric modeling parameters, then the key points are used for generating the surface, and finally the boundary of the electrode surface and the boundary of the thin film reflecting surface are sealed by the surface, so as to adhere the generated body, specifically comprising the following steps:
(1) Generating central key point coordinates (0, 0) of the film reflecting surface and three-dimensional space coordinates of circumferential and radial key points of the film reflecting surface
(2) Generating central key point coordinates (0, -H) of electrode surface and three-dimensional space coordinates of electrode surface circumferential and radial key points
(3) Connecting key points of the film reflecting surface to generate a surface by utilizing a triangle topological connection relationship;
(4) Connecting the key points of the electrode surface to generate a surface by utilizing a triangle topological connection relationship;
(5) The boundary between the electrode surface and the boundary between the thin film reflection surface are sealed with a surface, and the resultant is bonded.
As shown in fig. 4, the method for meshing the body by using the electrostatic-structure coupling unit and meshing the thin film reflecting surface by using the thin film unit specifically includes the following steps:
(1) Grid division is carried out on the generated body by utilizing a four-node tetrahedron electrostatic-structure coupling unit, and corresponding material properties are given;
(2) And meshing the film reflecting surface by utilizing the three-node triangle film units, and endowing the film reflecting surface with corresponding material properties.
As shown in fig. 5, the given film prestress, structural boundary condition and electrostatic field boundary condition are used for performing deformation analysis of the film reflecting surface, and specifically the following steps are involved:
(1) Applying uniform prestressing force sigma to each film unit in film reflecting surface 0 ＝[σ x σ y 0] T ；
(2) Constraining three degrees of freedom of displacement of boundary nodes of the thin film reflecting surface and all nodes on the electrode surface;
(3) The voltage value of the film reflecting surface is set to be 0V, and the electrode surface is provided with corresponding voltage values U= [ U ] according to different voltage channels 1 U 2 … U NU ] T Where NU is the number of voltage channels;
(4) And (5) carrying out finite element model solving, and analyzing the deformation of the thin film reflecting surface.
The application effect of the present invention will be described in detail with reference to simulation experiments.
Simulation conditions:
given geometrical parameters of the film reflecting surface, including the caliber D of the film reflecting surface m =5m, focal length f m Number of radial segments of film reflective surface N =10m rm Number of circumferential segments n=18 hm =6; given electrode face geometry parameters, including electrode face caliber D e =4.9m, focal length f e Number of radial electrode surface segments N =10m re Number of circumferential segments n=6 he The distance H between the central key point of the electrode surface and the central key point of the thin film reflecting surface=0.025 m, and the electrode surface, the thin film reflecting surface and the overall geometric model are respectively shown in fig. 6, fig. 7 and fig. 8; finite element meshing is carried out on the geometric model, and prestress sigma is applied to the thin film reflecting surface 0 ＝[10 4 Pa 10 4 Pa 0] T Given the structural constraint condition of the thin film reflecting surface and the electrode surface, the voltage U= [10 ] between the thin film reflecting surface and the electrode surface 4 V 10 4 V 10 4 V 10 4 V 10 4 V 10 4 V] T The method comprises the steps of carrying out a first treatment on the surface of the The deformation analysis of the thin film reflecting surface is carried out by using a physical environment method and the method of the invention respectively, the final deformation of the thin film reflecting surface obtained by the physical environment method is shown in figure 9, the final deformation of the thin film reflecting surface obtained by the method of the invention is shown in figure 10, and the solving precision of the deformation of the thin film reflecting surface is the same; the total time of solving by a physical environment method is 48.22S, and the total time of solving by the method is 14.73S, so that the method can improve the solving efficiency by 69.44 percent while ensuring the solving precision.
The foregoing disclosure is only a few specific embodiments of the invention, and those skilled in the art may make various changes and modifications to the embodiments of the invention without departing from the spirit and scope of the invention, but the embodiments of the invention are not limited thereto, and any changes that may be made by those skilled in the art should fall within the scope of the invention.
Claims (6)
1. The method for analyzing deformation of the film reflecting surface of the electrostatically formed film antenna is characterized by comprising the following steps:
obtaining geometrical parameters and material parameters of an electrode surface of the electrostatic formed film reflecting surface antenna;
obtaining geometric parameters and material parameters of a thin film reflecting surface of the electrostatic formed thin film reflecting surface antenna;
respectively establishing an electrode surface geometric model, a thin film reflecting surface geometric model and a geometric model formed by combining the electrode surface and the thin film reflecting surface into a whole according to the geometric parameters of the electrode surface and the thin film reflecting surface;
utilizing an electrostatic-structure coupling unit to carry out finite element mesh division on a geometric model formed by combining an electrode surface and a film reflecting surface into a whole, and endowing the geometric model with corresponding material properties;
performing finite element mesh division on the geometric model of the film reflecting surface by utilizing the film unit, and endowing corresponding material properties;
establishing a finite element analysis model by utilizing finite element grids divided into a geometric model formed by combining an electrode surface and a film reflecting surface and a geometric model of the film reflecting surface;
according to the initial conditions and the boundary conditions, using a finite element analysis model to carry out deformation analysis on the reflecting surface of the film:
wherein, establish electrode face geometric model, film reflecting surface geometric model and by electrode face, film reflecting surface make up the holistic geometric model respectively include:
generating central key point coordinates (0, 0) of the film reflecting surface, and three-dimensional space coordinates of circumferential and radial key points of the film reflecting surface:
wherein: d (D) m Is the caliber of the reflecting surface of the film, N rm For radial segment number of film reflecting surface N hm For the circumferential segmentation number of the film reflecting surface, f m Focal length of the reflecting surface;
generating central key point coordinates (0, -H) of the electrode surface, and three-dimensional space coordinates of the circumferential and radial key points of the electrode surface:
wherein: d (D) e Is the caliber of the electrode surface, f e For the focal length of the electrode surface, N re For the radial segmentation number of the electrode surface, N he The number of the circumferential segments of the electrode surface is H, and the distance between the central key point of the electrode surface and the central key point of the film reflecting surface is H;
connecting key points of the thin film reflecting surface to the generating surface by utilizing a triangle topological connection relationship, and constructing a geometric model of the thin film reflecting surface;
connecting the key points of the electrode surface to generate a surface by utilizing a triangle topological connection relationship, and constructing a geometric model of the electrode surface;
sealing the boundary of the electrode surface and the boundary of the film reflecting surface by using surfaces, and bonding a generating body to construct an integral geometric model;
the finite element meshing of the geometric model formed by the electrode surface and the thin film reflecting surface into a whole by using the electrostatic-structure coupling unit comprises the following steps:
utilizing a four-node tetrahedron electrostatic-structure coupling unit to carry out finite element mesh division on a geometric model formed by combining electrode surfaces and film reflecting surfaces into a whole;
the finite element meshing of the geometric model of the thin film reflecting surface by using the thin film unit comprises the following steps:
and performing finite element mesh division on the geometric model of the film reflecting surface by using a three-node triangle film unit.
2. The method of analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna as claimed in claim 1, wherein said initial conditions include:
applying uniform prestressing force to each film unit in the film reflecting surface,
σ 0 ＝[σ x σ y 0] T
wherein sigma x Represents the stress value, sigma, in the x direction of the film unit y The y-direction stress value of the thin film unit is shown.
3. The method of analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna as claimed in claim 1, wherein said boundary condition comprises: structural boundary conditions and electrostatic field boundary conditions.
4. A method of analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna as claimed in claim 3, wherein said structural boundary conditions comprise:
and constraining three displacement degrees of freedom of boundary nodes of the thin film reflecting surface and all nodes on the electrode surface.
5. A method of analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna as claimed in claim 3, wherein said electrostatic field boundary condition comprises:
the voltage value of the film reflecting surface is set to be 0V, and the electrode surface is provided with corresponding voltage values U= [ U ] according to different voltage channels 1 U 2 …U NU ] T Where NU is the number of voltage channels.
6. The method of analyzing deformation of a thin film reflecting surface of an electrostatically formed thin film antenna according to claim 1, wherein the material parameters of the thin film reflecting surface include a thin film unit material parameter and an electrostatic-structural coupling unit material parameter;
the geometric parameters of the thin film reflecting surface comprise: the caliber, focal length and radial segmentation number and annular segmentation number of the film reflecting surface;
the geometrical parameters of the electrode surface include: the aperture of the electrode surface, the focal length, the radial segmentation number of the electrode surface, the annular segmentation number and the distance between the central key point of the electrode surface and the central key point of the film reflecting surface;
the film unit material parameters include: mass density, elastic modulus, poisson ratio, thickness, coefficient of thermal expansion;
the electrostatic-structural coupling unit material parameters include: vacuum dielectric constant, relative dielectric constant, elastic modulus, poisson's ratio.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101257149A (en) * | 2008-04-10 | 2008-09-03 | 西安电子科技大学 | Method for dividing aerial reflecting plane graticule based on structure electromagnetic coupling |
| CN104123421A (en) * | 2014-07-31 | 2014-10-29 | 西安电子科技大学 | Electrostatic forming film reflecting surface form design method based on mechanical and electrical field coupling |
| CN105426592A (en) * | 2015-11-06 | 2016-03-23 | 西安电子科技大学 | Electrostatically formed film reflecting surface antenna analysis method |
| CN106156429A (en) * | 2016-07-05 | 2016-11-23 | 西安电子科技大学 | A kind of Electrostatic deformation film antenna finite element modeling method based on information in kind |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101257149A (en) * | 2008-04-10 | 2008-09-03 | 西安电子科技大学 | Method for dividing aerial reflecting plane graticule based on structure electromagnetic coupling |
| CN104123421A (en) * | 2014-07-31 | 2014-10-29 | 西安电子科技大学 | Electrostatic forming film reflecting surface form design method based on mechanical and electrical field coupling |
| CN105426592A (en) * | 2015-11-06 | 2016-03-23 | 西安电子科技大学 | Electrostatically formed film reflecting surface antenna analysis method |
| CN106156429A (en) * | 2016-07-05 | 2016-11-23 | 西安电子科技大学 | A kind of Electrostatic deformation film antenna finite element modeling method based on information in kind |
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