CN114062315B - Tunable semiconductor laser absorption spectrum system - Google Patents
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- CN114062315B CN114062315B CN202111356487.3A CN202111356487A CN114062315B CN 114062315 B CN114062315 B CN 114062315B CN 202111356487 A CN202111356487 A CN 202111356487A CN 114062315 B CN114062315 B CN 114062315B
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
Abstract
The invention discloses a tunable semiconductor laser absorption spectrum system, which mainly comprises a light source generation module for generating signal light, a multi-mirror light through pool for the signal light to reciprocate after being injected, and a signal processing module for monitoring the multi-mirror light through pool.
Description
Technical Field
The invention relates to the field of trace gas detection of an absorption spectrum technology, in particular to a tunable semiconductor laser absorption spectrum system.
Background
The tunable semiconductor laser absorption spectrum system plays a significant role in the fields of biomedicine, industrial processing, pollution monitoring and the like.
For example, in pollution monitoring applications, the atmospheric content of gases such as formaldehyde and ammonia gas can be as low as pptv magnitude, and in order to analyze the causative mechanism of atmospheric pollution, the trace gases need to be rapidly monitored by an external field under various measurement conditions such as vehicle-mounted and airborne conditions, so that the detection sensitivity, the responsiveness and the portability of the gases are higher. In order to improve the detection sensitivity of the tunable semiconductor laser absorption spectrum system, in addition to suppressing noise in signals, the length of an effective absorption optical path of gas is also important, and for the gas to be detected with the same concentration, the longer the absorption optical path is, the larger the absorption signal is, and the higher the detection sensitivity of the system is.
In a tunable semiconductor laser absorption spectrum system, a longer effective absorption optical path is obtained, one method is to increase the light spot distribution number of a mirror surface so as to improve the reflection times of signal light beams in a multi-pass cell, but when the light spot distribution number of the mirror surface is too much, interference can be caused between adjacent light spots so as to increase optical noise and influence the detection sensitivity of the system, aspherical mirrors with non-constant curvature radii can also be used as reflecting mirrors at two ends of the multi-pass cell to form different light spot distribution compared with a traditional Horriott cell so as to improve the utilization rate of the mirror surface, when the utilization rate of the mirror surface light spots reaches saturation, only the second method can be adopted, the absorption optical path is improved under the condition of the same reflection times by increasing the length of the multi-pass cell, but when the length of the multi-pass cell is too long, the portability of an instrument is greatly reduced, so that real-time measurement of an external field is inconvenient. At present, for the second method, on the premise of ensuring the physical size of the multipass cell, a multipass cell design scheme for improving the single propagation optical path is relatively lacking. Therefore, how to further improve the effective absorption optical length of the gas multipass cell while ensuring the portability of the system becomes a technical problem to be solved at present.
Disclosure of Invention
The invention aims to provide a tunable semiconductor laser absorption spectrum system which is used for improving the detection sensitivity of the system on the premise of ensuring the portability of the system, so that the tunable semiconductor laser absorption spectrum system is suitable for gas monitoring application under different environmental requirements.
The invention provides a tunable semiconductor laser absorption spectrum system which comprises a light source generation module for generating signal light, a multi-mirror light through pool for the signal light to reciprocate after being emitted, and a signal processing module for monitoring the multi-mirror light through pool.
Further, the beam waist position of the signal light is matched with the beam waist position of the multi-mirror optical through cell.
Further, many mirrors light passes through the pond and passes through the pond for five mirrors light, five mirrors light passes through the pond including first high reflection mirror, the high reflection mirror of second and set up in the high reflection mirror of three plane on the light path between first high reflection mirror, the high reflection mirror of second, first high reflection mirror, the high reflection mirror of second and three the plane is high the plane is reflected the plane and is all oriented five mirrors light passes through the pond inboardly, be equipped with the confession on first high reflection mirror, the high reflection mirror of second respectively the aperture that the signal light jets into and jets out.
Furthermore, the reflecting surfaces of the first high-reflection mirror, the second high-reflection mirror and the three plane high-reflection mirrors are all plated with high-reflectivity film layers corresponding to the absorption line wave band of the gas to be detected and the guide light wave band.
Further, the first high-reflection mirror and the second high-reflection mirror are high-reflection mirrors for realizing different types of light spot distribution.
Furthermore, the first high-reflection mirror and the second high-reflection mirror are both plano-concave high-reflection mirrors, the high-reflectivity film layers are coated on the concave surfaces, and the optical path distance between the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror can be determined through a preset calculation formula;
the preset calculation formula is as follows:
2kπ＝2mθ；
cosθ＝1-(L/r)；
wherein k is the number of rotation turns of the heavy incident light beam around the optical axis of the high-reflection mirror, m is the number of light spots, theta is the included angle of adjacent light spots, L is the single optical path length L between the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror, r is the curvature radius of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror, x 0 And y 0 An incident coordinate position of the signal light expressed by using the center of the first plane of the first plano-concave high-reflection mirror as a coordinate origin, x 0 ' is the incident angle of the signal light, A is the distribution radius of the specular light spot, and the single optical path length L is required to satisfy 0<L<2r。
Furthermore, the first high-reflection mirror and the second high-reflection mirror are both plano-concave high-reflection mirrors, the high-reflectivity film layer is plated on the concave surface, and the focal lengths of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror are inversely proportional to the distance from the optical axis to the corresponding position of the mirror surface;
the focal lengths of the plano-concave high-reflection mirror are as follows:
wherein rho is the length of the mirror surface from the optical axis, f (rho) is the focal length of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror, and rho c Is a length constant, f 0 Is the mirror distance from the optical axis ρ c Focal length at location.
Further, the light source generation module comprises a quantum cascade laser, a He-Ne laser, a laser driving module, a beam splitter, a plane mirror and a plano-convex lens.
Furthermore, the signal processing module comprises a photoelectric detector, a signal acquisition unit and a processor which correspond to the small hole on the second high-reflection mirror for the signal light to emit.
According to the tunable semiconductor laser absorption spectrum system, signal light is emitted into the reciprocating multi-mirror optical through cell, so that the portability of the system is guaranteed, the effective absorption optical path of the gas multi-pass cell is improved, and the high-sensitivity detection of trace gas is realized.
Drawings
FIG. 1 is a block diagram of a tunable semiconductor laser absorption spectroscopy system according to an embodiment of the present invention;
FIG. 2a is a simulated distribution diagram of mirror spots at the output end before matching by using a conventional Herriot multipass Chi Shuyao according to an embodiment of the present invention;
FIG. 2b is a simulated distribution diagram of mirror spots at the output end after matching by using the conventional Herriot multipass Chi Shuyao according to the embodiment of the present invention;
FIG. 2c is a Tracepro optical path simulation diagram after matching by using the conventional Herriot multipass Chi Shuyao provided by the embodiment of the present invention;
fig. 3a is a simulated distribution diagram of mirror spots at the front output end by matching the novel long-optical-path five-mirror optical path Chi Shuyao provided by the embodiment of the present invention;
fig. 3b is a simulated distribution diagram of light spots at the output end of the output end after beam waist matching by using the novel long-optical-path five-mirror optical pass cell according to the embodiment of the present invention;
fig. 3c is a Tracepro optical path simulation diagram after beam waist matching by using the novel long-optical-path five-mirror optical pass cell according to the embodiment of the present invention;
detailed description of the preferred embodiments
The invention is further described with reference to the following figures and detailed description.
Fig. 1 is a block diagram of a tunable semiconductor laser absorption spectroscopy system in the present embodiment. The invention provides a tunable semiconductor laser absorption spectrum system, taking a five-mirror optical pass cell as an example, the system comprises: the device comprises a light source generation module, a five-mirror light-pass pool and a signal processing module, wherein the five-mirror light-pass pool is used for reciprocating after the signal light is emitted into the light source generation module, and the signal processing module is used for monitoring the five-mirror light-pass pool, and the light source generation module comprises a quantum cascade laser 3, a He-Ne laser 2, a laser driving module 1, a beam splitter 5, plane reflectors (4, 7 and 8) and a plano-convex lens 6; the signal processing module comprises a photoelectric detector 16 and a signal acquisition and processing module 17; the cell body of the five-mirror light-passing cell comprises a first plano-concave high reflecting mirror 9, a high reflecting mirror 10, a high reflecting mirror 11, a high reflecting mirror 12 and a second plano-concave high reflecting mirror 13, signal light beams enter the novel long optical path five-mirror light-passing cell through a small hole of the first plano-concave high reflecting mirror 9 at a certain angle, sequentially pass through the surface of the high reflecting mirror 10, the surface of the high reflecting mirror 11, the surface of the high reflecting mirror 12 and the surface of the second plano-concave high reflecting mirror 13, then are folded back to the surface of the first plano-concave high reflecting mirror 9 from the high reflecting mirror 12, the high reflecting mirror 11 and the high reflecting mirror 10, form stable optical field distribution in the novel long optical path five-mirror light-passing cell, and finally exit from a small hole of the second plano-concave high reflecting mirror 13.
The concave surfaces of the first plano-concave high reflecting mirror 9 and the second plano-concave high reflecting mirror 13 are reflecting surfaces, the concave surfaces are plated with a high-reflectivity film layer of a gas absorption line wave band to be detected and a high-reflectivity film layer of a red light guiding wave band, the two surfaces of the high reflecting mirror 10, the high reflecting mirror 11 and the high reflecting mirror 12 are planes, the high-reflectivity film layer of the gas absorption line wave band to be detected and the high-reflectivity film layer of the red light guiding wave band are plated towards one surface of the inner side of the multi-pass cell, the position of an incident hole of the first plano-concave high reflecting mirror 9, which is away from the central point of the high reflecting mirror, is equal to the radius of light spot distribution, and the position can be determined according to the size of a mirror surface and the number of required light spot distribution.
According to the're-entrant' theory, the distance between the concave reflectors on the two sides of the multi-pass cell can be set according to the quantity requirement of the distribution of the light spots on the mirror surface, as shown in the following formula.
2kπ＝2mθ (1)
cosθ＝1-(L/r) (2)
(1) In the formula (5), k is the number of rotation turns of the light beam around the optical axis of the high-reflection mirror for realizing heavy incidence, m is the number of light spots, theta is the included angle of adjacent light spots, L is the single optical path length L between the two concave reflectors, and r is the curvature radius of the high-reflection mirror. Incident angle x 0 ' is obtainable from the following formula.
Assuming that the curvature radius of the plano-concave high-reflection mirror is 1m, in order to fully utilize the mirror surface and not to cause overlapping interference between light spots, the number m = A/(D) of the light spot distribution size *2)，D size For the size of the light spot diameter at the mirror surface of the plano-concave high-reflection mirror (the size of the light spot corresponding to the 1/e ^2 position of the light intensity peak value), the traditional Horriot multi-pass cell is adopted, when the cavity length is 26.7cm, the number of the light spots distributed on the mirror surface is 21, and the effective absorption optical path is about 11.21m at the moment.
FIG. 2a shows an embodiment of the present inventionAccording to the provided simulation distribution diagram of the light spots on the output end of the Tracepro before the traditional Herriot multi-pass Chi Shuyao matching is adopted, the diagram shows that before the beam waist matching, overlapping interference occurs between the light spots, and according to geometric optical calculation, caF with the curvature radius of 222mm and the thickness of 4.5mm is adopted 2 Fig. 2b is a simulation distribution diagram of the mirror surface light spots at the output end of Tracepro after the matching of the traditional Herriot multi-pass Chi Shuyao provided by the embodiment of the present invention, and it can be known from the simulation result that after the beam waist is matched, the light spots are uniformly distributed without interference and overlapping. The Tracepeo simulated optical path diagram is shown in fig. 2c, where simulation is used, the output plano-concave high-reflection mirror is not perforated, and the signal light exits from the input plano-concave high-reflection mirror aperture.
In order to improve the absorption optical path, the length of the multipass cell is increased to 112cm, the spot size of the mirror surface is increased due to the increase of the cell length, the distribution number of the spots of the mirror surface is 13, and the effective absorption optical path of the multipass cell is about 29.12m at this moment. However, a cell length of 1.12m is less portable and not conducive to integration and outfield measurements. Therefore, the novel long-optical-path five-mirror optical pass cell provided by the embodiment of the invention reduces the space length size of the multi-pass cell and improves the portability of the system. Let θ be 5 °, the coordinate position and the tilt angle of the lens of the light pass cell of the novel long light Cheng Wujing can be obtained by the calculation method provided by the embodiment of the present invention, the coordinate of the beam waist position of the signal is (21.7,55.3, -1609.9), the center of the first surface (the plane on the back surface of the concave reflecting surface) of the first concave-convex high-reflection mirror 9 is the origin of coordinates, the spatial coordinate of the center of the first surface of the first concave-convex high-reflection mirror 9 is {0,0,0}, the angle is {0 °,0 °,0 ° }, the spatial coordinate of the center of the first surface of the planar high-reflection mirror 10 is {0,0,286.5}, the angle is {5 °,0 ° }, the spatial coordinate of the center of the first surface of the planar high-reflection mirror 11 is {0,49.2,4.3}, the angle is {5 °,0 °,0 ° }, the spatial coordinate of the center of the first surface of the planar high-reflection mirror 12 is { 4232 zxft 32 }, the angle is { 4264 } of the spatial coordinate of the planar high-reflection mirror 4213 } 4213.
The novel long-optical-path five-mirror optical pass cell provided by the embodiment of the invention shortens the space length of 112cm to 28cm, compared with the traditional HorrioCompared with the t-multi-pass cell, the space length size is similar, but the effective optical path is improved by nearly 2.6 times. FIG. 3a is a diagram of a simulation distribution of light spots on a mirror surface at an output end of Tracepro before matching with a novel long-optical-path five-mirror optical path Chi Shuyao according to an embodiment of the present invention, which shows that overlapping interference occurs between light spots before matching of beam waist, and according to geometric optical calculation, caF with a curvature radius of 271mm and a thickness of 4.5mm is used 2 Fig. 3b is a simulation distribution diagram of the mirror surface light spots at the output end of Tracepro after the matching of the traditional Herriot multi-pass Chi Shuyao provided by the embodiment of the invention, and the simulation result shows that the light spots are uniformly distributed without interference and overlapping after the beam waist matching. The simulated optical path diagram of Tracepeo is shown in fig. 3c, where the simulation is used, the high-reflection mirror 14 is not apertured, and the signal beam exits from the aperture of the high-reflection mirror 10.
When the laser driving module and the temperature control module operate, the laser driving module and the temperature control module respectively perform current modulation and temperature control on the quantum cascade laser, so as to emit signal light, the reflector 4 and the beam splitter 5 are adjusted to enable the signal light to coincide with the guiding light emitted by the He-Ne laser, the signal light and the guiding light are reflected by the two plane reflectors, the signal light is incident into the long-optical-path five-mirror optical pass cell from the small hole of the first plano-concave high reflector 9 at a certain angle, circular light spot distribution with uniform distribution is formed on the surface of each mirror after multiple reflections, when the second plano-concave high reflector 13 is provided with a small hole, the signal light is emitted from the small hole of the second plano-concave high reflector 13, when the second plano-concave high reflector 13 is not provided with a small hole, the signal light is emitted from the small hole of the first plano-concave high reflector 9 at a certain angle different from the incident angle, the photoelectric detector performs photoelectric conversion on the signal light, and finally, the signal acquisition and processing module acquires and processes the signal.
In one embodiment, the first high-reflection mirror and the second high-reflection mirror are both plano-concave high-reflection mirrors, the high-reflectivity film layer is coated on the concave surface, and the focal lengths of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror are inversely proportional to the distance from the optical axis to the corresponding position of the mirror surface;
the focal length of the plano-concave high-reflection mirror is as follows:
wherein rho is the length of the mirror surface from the optical axis, f (rho) is the focal length of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror, and rho c Is a length constant, f 0 Is the mirror surface distance from the optical axis ρ c Focal length at location.
Specifically, the novel long light Cheng Wujing optical pass cell provided by the application can be combined with Lissajous light spot distribution and light spot distribution with higher mirror utilization rate, and further improves the absorption optical path of gas on the basis of fully utilizing the mirror.
In summary, compared with the prior art, the invention has the advantages that:
(1) The invention provides a method for matching the beam waist of a signal light beam with the beam waist of a novel long light Cheng Wujing light pass tank body by adopting a plano-convex focusing lens, so that the utilization rate of a mirror surface can be improved on the premise of not generating optical interference when other condition parameters are unchanged;
(2) The tunable semiconductor laser absorption spectrum system based on the novel long-optical-path five-mirror optical pass cell realizes the distribution of a re-incident optical field in the five-surface high-reflection mirror, and improves the effective absorption optical path of system gas by multiple times while ensuring that the space length and the size of equipment are not changed; the laser driving system realizes the current driving and the temperature control of the laser, and the direct current bias of the driving current, the type of the modulation wave, the frequency of the modulation wave, the amplitude of the modulation wave and the temperature of the cavity of the laser can be adjusted, thereby being convenient for the measurement and the debugging in the optical system.
(3) The invention provides a novel method for calculating the coordinate position and the inclination angle of a long light Cheng Wujing optical pass cell lens, so as to meet the requirements of different space sizes and effective absorption optical paths.
(4) The novel long light Cheng Wujing light pass cell provided by the invention can be combined with Lissajous light spot distribution and light spot distribution with higher mirror utilization rate, and further improves the absorption optical path of gas on the basis of fully utilizing the mirror.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (4)
1. A tunable semiconductor laser absorption spectroscopy system, comprising: the device comprises a light source generation module for generating signal light, a multi-mirror light through pool for the signal light to reciprocate after being emitted, and a signal processing module for monitoring the multi-mirror light through pool;
the beam waist position of the signal light is matched with the beam waist position of the multi-mirror light through pool;
the multi-mirror light-passing pool is a five-mirror light-passing pool, the five-mirror light-passing pool comprises a first plano-concave high-reflection mirror, a second plano-concave high-reflection mirror and a first plane high-reflection mirror, a second plane high-reflection mirror and a third plane high-reflection mirror which are arranged on a light path between the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror, the reflecting surfaces of the first plano-concave high-reflection mirror, the second plane high-reflection mirror and the third plane high-reflection mirror face the inner side of the five-mirror light-passing pool, and small holes for the signal light to enter and exit are respectively arranged on the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror; a signal light beam enters the five-mirror light pass cell through a small hole of the first plano-concave high-reflection mirror at a certain angle, sequentially passes through the first plano-concave high-reflection mirror surface, the second plano-concave high-reflection mirror surface, the third plano-concave high-reflection mirror surface and the second plano-concave high-reflection mirror surface, then is folded back to the first plano-concave high-reflection mirror surface from the third plano-concave high-reflection mirror, the second plano-concave high-reflection mirror and the first plano-concave high-reflection mirror, forms stable light field distribution in the five-mirror light pass cell, and finally exits from a small hole of the second plano-concave high-reflection mirror; the reflecting surfaces of the first plano-concave high-reflection mirror, the second plano-concave high-reflection mirror and the three planar high-reflection mirrors are plated with high-reflectivity film layers corresponding to a gas absorption line wave band to be detected and a guide light wave band; the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror are high-reflection mirrors for realizing different types of light spot distribution; the high-reflectivity film layer is coated on the concave surfaces of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror, and the optical path distance between the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror is determined through a preset calculation formula;
the preset calculation formula is as follows:
2kπ＝2mθ；
cosθ＝1-(L/r)；
wherein k is the number of rotation turns of the light beam around the optical axis of the plano-concave high reflecting mirror for realizing heavy incidence, m is the number of light spots, theta is the included angle of adjacent light spots, L is the single optical path length L between the first plano-concave high reflecting mirror and the second plano-concave high reflecting mirror, r is the curvature radius of the first plano-concave high reflecting mirror and the second plano-concave high reflecting mirror, x is the curvature radius of the first plano-concave high reflecting mirror and the second plano-concave high reflecting mirror, and 0 and y 0 The incident coordinate position of the signal light is expressed by taking the center of the first surface of the first plano-concave high-reflection mirror as the origin of coordinates, the first surface of the first plano-concave high-reflection mirror is a plane on the back of the concave reflection surface of the first plano-concave high-reflection mirror, and x is 0 ' is the incident angle of the signal light, A is the distribution radius of the specular light spot, and the single optical path length L is required to satisfy 0<L<2r。
2. The tunable semiconductor laser absorption spectroscopy system of claim 1 wherein the focal lengths of the first and second plano-concave high-reflection mirrors are inversely proportional to the distances from the optical axis to the corresponding positions of the mirror surfaces;
the focal lengths of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror are as follows:
wherein rho is the length of the mirror surface from the optical axis, f (rho) is the focal length of the first plano-concave high-reflection mirror and the second plano-concave high-reflection mirror, and rho c Is a length constant, f 0 Is the mirror surface distance from the optical axis ρ c Focal length at location.
3. The tunable semiconductor laser absorption spectroscopy system of claim 1 wherein the light source generation module comprises a quantum cascade laser, a He-Ne laser, a laser drive module, a beam splitter, a plane mirror, and a plano-convex lens; the laser driving module is used for carrying out current modulation on the quantum cascade laser so as to emit signal light, the He-Ne laser is used for emitting guide light, laser beams emitted by the quantum cascade laser and the He-Ne laser are combined by the beam splitter and then enter the plano-convex lens, and the laser beams emitted by the plano-convex lens are reflected by the plane reflector and then enter the five-mirror light pass cell through the small hole of the first plano-concave high reflecting mirror.
4. The tunable semiconductor laser absorption spectroscopy system of claim 3 wherein the signal processing module comprises a photodetector corresponding to the aperture of the second piano concave high-reflection mirror through which the signal light exits, a signal acquisition unit, and a processor.
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| CN205593914U (en) * | 2016-05-03 | 2016-09-21 | 青岛海纳光电环保有限公司 | Portable gaseous pollutants concentration detection device |
| CN106129787A (en) * | 2016-08-24 | 2016-11-16 | 中国科学院西安光学精密机械研究所 | Mode locked fiber laser based on Herriott pond |
| CN106802288A (en) * | 2017-03-22 | 2017-06-06 | 河北大学 | Gas-detecting device and method based on tunable laser and super continuous spectrums laser |
| CN109557028A (en) * | 2018-12-09 | 2019-04-02 | 山西大学 | A kind of multi-pass pond with intensive spot pattern |
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