CN114047163A - Terahertz frequency band plasma sensor and working method thereof - Google Patents
Terahertz frequency band plasma sensor and working method thereof Download PDFInfo
- Publication number
- CN114047163A CN114047163A CN202111332482.7A CN202111332482A CN114047163A CN 114047163 A CN114047163 A CN 114047163A CN 202111332482 A CN202111332482 A CN 202111332482A CN 114047163 A CN114047163 A CN 114047163A
- Authority
- CN
- China
- Prior art keywords
- resonator
- sensor
- frequency band
- terahertz frequency
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000001228 spectrum Methods 0.000 claims abstract description 24
- 230000005540 biological transmission Effects 0.000 claims abstract description 23
- 230000008878 coupling Effects 0.000 claims abstract description 17
- 238000010168 coupling process Methods 0.000 claims abstract description 17
- 238000005859 coupling reaction Methods 0.000 claims abstract description 17
- 230000008859 change Effects 0.000 claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 13
- 238000001514 detection method Methods 0.000 claims abstract description 9
- 230000005674 electromagnetic induction Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 13
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 14
- 239000012491 analyte Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000985 reflectance spectrum Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012237 artificial material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
- G01N21/553—Attenuated total reflection and using surface plasmons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention provides a terahertz frequency band plasma sensor and a working method thereof. The sensor comprises a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is spaced from the first resonator by a certain distance, and the first resonator is spaced from the second resonator by a certain distance; during detection, the object to be detected is combined with the sensor, so that the SPPs wave propagation constant in the sensor is changed, the first resonator and the second resonator are subjected to resonant coupling, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the change of the dielectric constant of the object to be detected is identified.
Description
Technical Field
The invention belongs to the technical field of design of terahertz frequency band plasma sensors, and particularly relates to a terahertz frequency band plasma sensor and a working method thereof.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
With the continuous development of terahertz technology, the corresponding high-sensitivity sensor has important application value in the fields of biological detection, food safety, medical imaging and the like. However, due to the limitations of terahertz source resolution and terahertz wave-substance interaction, the technical indexes of terahertz sensing are difficult to break through. In recent years, the scientific community has proposed an artificial material applied to the terahertz frequency band, namely dirac semimetal, also called as "3D graphene". Similar to graphene materials, the dirac semimetal can excite surface plasma polarization waves (SPPs) on the surface of the dirac semimetal by adjusting material parameters of the dirac semimetal, and an enhanced field generated by the SPPs can break through a diffraction limit so as to realize a sub-wavelength-scale photonic device.
In laser driven atomic systems, the coupling between a continuous state and a discrete state produces quantum interference effects and a distinct reflection peak within its absorption band, a physical phenomenon known as electromagnetically induced transparent reflection (EIR). At present, the conditions for generating the EIR effect in an atomic system are very harsh, the similar EIR effect can be generated by utilizing the resonant coupling between the low-dimensional material micro-nano structures, and the unique field energy distribution generated in the reflecting window can have potential application in the fields of biosensing, nonlinear optics and the like.
At present, the terahertz frequency band sensing technology mainly utilizes electromagnetic waves to realize resolution performance of sub-wavelength scale on the surface of a metamaterial through local electromagnetic resonance, and can realize higher resolution and sensitivity. However, the biosensor based on the metamaterial structure has very strict requirements on the size and the processing precision due to the complex periodic structure, and has strict requirements on the adhesion property of the analyte, so that the detection sensitivity and the reliability of the biosensor are required to be further improved.
Disclosure of Invention
The invention provides a terahertz frequency band plasma sensor and a working method thereof in order to solve the problems.
According to some embodiments, the invention adopts the following technical scheme:
in a first aspect, the invention provides a terahertz frequency band plasma sensor.
A terahertz frequency band plasma sensor comprises a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is spaced from the first resonator by a certain distance, and the first resonator is spaced from the second resonator by a certain distance;
during detection, the object to be detected is combined with the sensor, so that the SPPs wave propagation constant in the sensor is changed, the first resonator and the second resonator are subjected to resonant coupling, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the change of the dielectric constant of the object to be detected is identified.
Further, the transmission waveguide, the first resonator and the second resonator are all of a double-layer dirac half-metal silicon-sandwiched structure.
Further, the dirac semimetal material thickness is set to 0.2 μm.
Further, the fermi level corresponding to the dirac semi-metal material is set as EF＝0.050eV。
Further, the distance w between the two dirac semimetals is 40 μm.
Further, the relative dielectric constant of the silicon material is 11.9.
Further, the transmission waveguide is spaced apart from the first resonator by a distance that is not equal to the distance that the first resonator is spaced apart from the second resonator.
Further, the length of the first resonator is the same as the length of the second resonator.
Further, the first resonator and the second resonator have the same resonance frequency.
In a second aspect, the invention provides a working method of a terahertz frequency band plasma sensor
A working method of a terahertz frequency band plasma sensor comprises the following steps:
during detection, an object to be detected is combined with the terahertz frequency band plasma sensor in the first aspect, so that the SPPs wave propagation constant in the sensor is changed, resonance coupling between the first resonator and the second resonator is caused, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the change of the dielectric constant of the object to be detected is identified.
Compared with the prior art, the invention has the beneficial effects that:
the sensor has the advantages of simple structure, stable performance, high sensitivity and high quality factor.
Compared with the traditional metamaterial structure sensor, the sensor has the advantages that the relative dielectric constant range of the to-be-detected object detectable by the sensor is 1.0-2.5, and the modulation space is larger.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
Fig. 1 is a side view structural view of a terahertz frequency band plasma sensor shown in the present invention;
fig. 2(a) shows the parameters d ═ g ═ 5 μm, w ═ 40 μm, and L in example two of the present invention1＝L290 μm, h 50 μm and ε r1, a sensor reflection spectrogram;
FIG. 2(b) is a diagram showing the Hz component of the sensor magnetic field at an operating frequency of 1.17THz, corresponding to point A in the reflection spectrum, according to example two of the present invention;
FIG. 2(c) is a diagram showing the Hz component of the sensor magnetic field at an operating frequency of 1.20THz, corresponding to point B in the reflection spectrum, according to example two of the present invention;
FIG. 2(d) is a diagram showing the Hz component of the sensor magnetic field at an operating frequency of 1.23THz, corresponding to point C in the reflection spectrum, according to example two of the present invention;
FIG. 3 shows the Fermi level E in the second embodiment of the present inventionFA sensor reflection spectrum curve chart under the condition of 0.040-0.060 eV;
fig. 4(a) is a graph of a reflection spectrum of the sensor when the distance d between the waveguide and the first resonator is 2.5, 5, 7.5, and 10 μm according to the second embodiment of the present invention;
fig. 4(b) is a graph of the reflection spectrum of the sensor when the distance g between the two resonators is 2.5, 5, 7.5, 10, 12.5 μm according to the second embodiment of the present invention;
FIG. 5 shows ε in accordance with a second embodiment of the present inventionr1.5, a sensor reflection peak frequency distribution curve chart along with the change of the thickness h of the object to be measured;
FIG. 6(a) shows the dielectric constant of the specimen in the second embodiment of the present invention as εrThe reflectance spectrum of the sensor under the conditions of 1.0, 1.5, 2.0 and 2.5;
FIG. 6(b) is a graph showing the sensitivity distribution of the sensor under different dielectric constants of the analyte according to the second embodiment of the present invention;
FIG. 7 shows the relative dielectric constant ε of an object to be measured according to a second embodiment of the present inventionrThe reflectance spectra of the sensor at different resonant modes at 1.0 and 1.5 are plotted.
The specific implementation mode is as follows:
the invention is further described with reference to the following figures and examples.
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
In the present invention, terms such as "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only terms of relationships determined for convenience in describing structural relationships of the parts or elements of the present invention, and do not particularly indicate any parts or elements of the present invention, and are not to be construed as limiting the present invention.
Example one
The embodiment provides a terahertz frequency band plasma sensor.
A terahertz frequency band plasma sensor comprises a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is spaced from the first resonator by a certain distance, and the first resonator is spaced from the second resonator by a certain distance;
during detection, the object to be detected is combined with the sensor, so that the SPPs wave propagation constant in the sensor is changed, the first resonator and the second resonator are subjected to resonant coupling, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the change of the dielectric constant of the object to be detected is identified.
As shown in fig. 1, the sensor is composed of a transmission waveguide and two resonators with the same size, and the transmission waveguide and the resonator structure are both made of a double-layer dirac semimetal-sandwiched silicon (Si) material. The object to be detected is combined with the sensor, so that the change of the SPPs wave propagation constant in the sensor can be caused, the shift of the transparent window in the reflection spectrum is further caused, and the identification of different objects to be detected is finally realized. Compared with the traditional metamaterial structure sensor, the sensor has the advantages that the relative dielectric constant range of the to-be-detected object which can be detected by the sensor is 1.0-2.5, and the modulation space is larger.
The sensor structure of the embodiment is composed of a transmission waveguide and two resonators with the same size, and the transmission waveguide and the resonator structure are both composed of a double-layer dirac semimetal-sandwiched silicon (Si) material. The Dirac semimetal material thickness is set to 0.2 μm and its corresponding Fermi level is set to EF0.050eV, Dirac semimetalThe distance w is 40 μm, and the length between the two resonators is L1＝L290 μm. The relative dielectric constant of the dielectric silicon (Si) is 11.9, the thickness of the object to be measured is h, and the relative dielectric constant epsilonrThe value range is 1.0-2.5. The transmission waveguide is coupled to the first resonator at a distance d and the first and second resonators are coupled at a distance g. The performance indexes of the terahertz plasma sensor comprise sensor sensitivity S and quality factor FOM. Wherein, S is df/dn, df is the reflection peak frequency offset, and dn is the refractive index change of the object to be measured; FOM is S/FWHM, FWHM is the half maximum width value of the transparent window corresponding to the reflection peak. Generally, the larger the sensor sensitivity S and the figure of merit FOM values, the better the overall performance of the sensor. The sensor designed by the embodiment has the advantages of simple structure, stable performance, high sensitivity and high quality factor.
The working principle is as follows: the sensor described in this embodiment is implemented by using the electromagnetic induced transparent reflection (EIR) effect generated by the mutual coupling between the two resonators, and generating an obvious reflection peak at the input end of the transmission waveguide. The first resonator and the second resonator adopted by the sensor are the same in size and have the same resonance frequency. The SPPs wave transmitted in the transmission waveguide is first coupled into the first resonator, and when a relation β L ═ 2m pi, m ═ 1, 2 … is satisfied in the first resonator, an F-P resonance is generated in the resonator, where m is the order of the F-P resonance, L is the resonator length, and β is the propagation constant of the SPPs wave in the resonator. Electromagnetic energy is coupled into the second resonator while the first resonator resonates, causing destructive interference between the two resonators to produce an EIR effect and inducing a transparent reflection peak in the waveguide reflection spectrum. The transmission waveguide and the resonator structure in the sensor are regarded as an 'air/object to be measured/Dirac semimetal/silicon/Dirac semimetal/object to be measured/air' model, and the SPPs wave propagation constant beta value in the structure can be obtained by utilizing a Maxwell boundary condition equation. Relative dielectric constant epsilon of object to be measuredrThe change of the propagation constant beta value can cause the change of the propagation constant beta value, so that the resonance frequency of the resonator is shifted, and the shift of the resonance frequency causes the change of the reflection spectrum of the sensor, so that the sensing characteristic is realized.
The sensor of the embodiment is a waveguide resonant coupling structure sensor, an enhanced field generated by SPPs waves transmitted in the sensor can break through a diffraction limit at a sub-wavelength scale, so that the sensor structure is more compact, and the generated local field can greatly inhibit loss and obtain a larger reflection peak value.
When the thickness of the object to be measured in the sensor reaches the saturated thickness, the sensing characteristic of the sensor cannot change along with the increase of the thickness of the object to be measured, and the sensor has strong stability. By adjusting the Fermi level of the Dirac semimetal material, a larger modulation space can be obtained on the premise of not changing the structure of the sensor. Meanwhile, higher sensitivity and quality factor can be obtained by improving the resonance order in the sensor, so that the performance of the sensor is further improved.
Example two
The embodiment provides a terahertz frequency band plasma sensor.
A working method of a terahertz frequency band plasma sensor comprises the following steps:
during detection, an object to be detected is combined with the terahertz frequency band plasma sensor in the first aspect, so that the SPPs wave propagation constant in the sensor is changed, resonance coupling between the first resonator and the second resonator is caused, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the change of the dielectric constant of the object to be detected is identified.
In order to study the electromagnetic response of the invented sensor, a numerical simulation of the designed sensor was performed using a finite difference time domain method. In fig. 2(a), the parameters d, g, w, and L are 5 μm, 40 μm, and1＝L290 μm and the relative dielectric constant ε of the specimenrThe reflection spectrum of the designed sensor under the condition of 1. As can be seen, a distinct reflection peak occurs between frequencies 1.0 and 1.3 THz. Fig. 2(b) - (d) show plots of the Hz component of the magnetic field at operating frequencies f of 1.17, 1.20 and 1.23THz, corresponding to points A, B and C, respectively, in the reflectance spectrum of fig. 2 (a). Destructive interference due to mutual coupling between the two resonators causes the resonant frequency to split into two reflection valleys, corresponding to points a and C in fig. 2 (a). Is not uglyThe electromagnetic energy in the transmission valley point a and point C is concentrated in the resonator 1 and the resonator 2, respectively. A distinct reflection peak is generated between the two valleys and a significant electromagnetic field enhancement is obtained in both resonators, with the distribution of the Hz component of the magnetic field as shown in figure 2 (d). In general, we refer to the band range between points a and C as a transparent window. The simultaneous and significant enhancement of the electromagnetic fields in the two resonators at the point of the reflection peak B can maximize the energy interaction with the object to be measured, which is highly desirable in the sensor design process.
Due to the unique electric tunable characteristic of the Dirac semimetal material, the peak position of the reflecting window can be freely adjusted by adjusting the Fermi energy value of the Dirac semimetal material. As can be seen from FIG. 3, with the Fermi level EFThe increase of the value can ensure that the position of the reflecting window generates blue shift on the premise of keeping the shape of the whole reflecting spectrum basically unchanged. Because the resonance frequency of the resonator depends on the value of the propagation constant β of the SPPs transmitted therein, the value of β follows the fermi level E of the dirac semimetalFMay vary. Therefore, a larger modulation space can be obtained on the premise of not changing the structure of the sensor by adjusting the Fermi level of the Dirac semimetal material.
To analyze the performance of the inventive sensor, fig. 4 shows a reflection spectrum of the change in coupling distance between the transmission waveguide and the resonator within the sensor. The reflection peak and the two valleys in the reflection spectrum increase with the increase of the coupling distance d, as shown in fig. 4 (a). However, the variation of the coupling distance d has little effect on the shift of the entire transparent reflective window. Meanwhile, fig. 4(b) shows a graph of the reflection spectrum when the distance g between the two resonators is changed. The bandwidth of the reflection window gradually decreases while the reflection peak is blue-shifted with increasing coupling distance g. And the smaller window bandwidth is beneficial to improving the FOM value of the sensor so as to improve the performance of the sensor. Therefore, in the sensor design, the optimal coupling distance between the transmission waveguide and the resonator is taken to be d-5 μm and g-12.5 μm.
The variation of the reflection peak of the sensor depends on the value of the propagation constant β of the SPPs wave transmitted within the sensor resonator. When epsilonr＝1.5，h>At 10 μm, the propagation constant β value remains constant, resulting in the reflection peak frequency of the sensor remaining substantially constant, as shown in fig. 5. At the same time,. epsilonrTaking the reflection peak frequency corresponding to 2.0 and 2.5 times in the thickness h of the object to be measured>The 10 μm also remained essentially unchanged. It can be seen that the analyte in the sensor has reached the saturation thickness when the analyte thickness h is 10 μm. Therefore, when the thickness h of the object to be measured>The sensing characteristic of the sensor at 10 mu m is not changed along with the increase of h, thereby showing that the sensor has stronger stability.
FIG. 6(a) shows the relative dielectric constant of the specimen taken as εrThe reflection spectrum of the sensor under the conditions of 1.0, 1.5, 2.0 and 2.5. In order to prevent the thickness of the object from affecting the propagation constant in the resonator, the thickness h of the object is 50 μm. Dielectric constant epsilon with the object to be measuredrThe increased reflection spectrum is correspondingly red-shifted, and then the shift of the reflection spectrum is realized. FIG. 6(b) is a sensitivity profile of the sensor under different relative dielectric constants. The sensor sensitivity increases with increasing dielectric constant value, but also with increasing FWHM value within the reflective window due to its correspondence. Therefore, when εrThe FOM value corresponding to the sensor is the maximum value when the FOM value is 1, and can reach 3.2.
The sensitivity and the FOM value of the sensor can be improved by improving the resonance order of the resonator in the sensor, so that the overall performance of the sensor is improved. FIG. 7 shows the relative dielectric constant ε of an analyterThe reflectance spectra of the sensor at 1.0 and 1.5 are plotted. The value of the wave propagation constant beta of the SPPs transmitted in the resonator is increased along with the increase of the working frequency; while high propagation constant values may further improve the sensitivity of the sensor. Compared with the FOM of 3.2 under the condition that the sensitivity in the mode 1 is 48, the mode 2 sensitivity can reach 120GHz/RIU, and the FOM value is improved to 4.2 correspondingly.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A terahertz frequency band plasma sensor is characterized by comprising a transmission waveguide, a first resonator and a second resonator which are sequentially arranged on the same horizontal line, wherein the transmission waveguide is spaced from the first resonator by a certain distance, and the first resonator is spaced from the second resonator by a certain distance;
during detection, the object to be detected is combined with the sensor, so that the SPPs wave propagation constant in the sensor is changed, the first resonator and the second resonator are subjected to resonant coupling, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the change of the dielectric constant of the object to be detected is identified.
2. The terahertz frequency band plasmon sensor of claim 1, wherein the transmission waveguide, the first resonator and the second resonator are all a double-layer dirac half-metal sandwiched silicon material structure.
3. The terahertz frequency band plasmon sensor of claim 2, wherein the dirac semimetal material thickness is set to 0.2 μ ι η.
4. The terahertz band-gap plasmon sensor of claim 2, wherein the corresponding fermi level of the dirac semimetal material is set to EF＝0.050eV。
5. The terahertz band plasmon sensor of claim 2, wherein the distance between the two dirac semimetals is w-40 μm.
6. The thz band plasmon sensor of claim 2, wherein the relative dielectric constant of said silicon material is 11.9.
7. The thz band plasmon sensor of claim 1, wherein said transmission waveguide is spaced from said first resonator by a distance that is not equal to the distance that said first resonator is spaced from said second resonator.
8. The terahertz frequency band plasmon sensor of claim 1, wherein the length of the first resonator and the length of the second resonator are the same.
9. The thz band plasmon sensor of claim 1, wherein said first resonator and said second resonator have the same resonance frequency.
10. A working method of a terahertz frequency band plasma sensor is characterized by comprising the following steps:
during detection, an object to be detected is combined with the terahertz frequency band plasma sensor as claimed in any one of claims 1 to 9, so that the SPPs wave propagation constant in the sensor is changed, resonance coupling between the first resonator and the second resonator is caused, an electromagnetic induction transparent reflection effect is generated, a transparent window in a reflection spectrum is shifted, and the change of the dielectric constant of the object to be detected is identified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111332482.7A CN114047163B (en) | 2021-11-11 | 2021-11-11 | Terahertz frequency band plasma sensor and working method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111332482.7A CN114047163B (en) | 2021-11-11 | 2021-11-11 | Terahertz frequency band plasma sensor and working method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114047163A true CN114047163A (en) | 2022-02-15 |
| CN114047163B CN114047163B (en) | 2024-05-28 |
Family
ID=80208366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111332482.7A Active CN114047163B (en) | 2021-11-11 | 2021-11-11 | Terahertz frequency band plasma sensor and working method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114047163B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030076865A1 (en) * | 2001-09-21 | 2003-04-24 | The Regents Of The University Of California | Variable semiconductor all-optical buffer using slow light based on electromagnetically induced transparency |
| CN102713609A (en) * | 2009-11-23 | 2012-10-03 | 韩国标准科学研究院 | Apparatus and method for quantifying binding and dissociation kinetics of molecular interactions |
| CN108572162A (en) * | 2018-05-17 | 2018-09-25 | 重庆邮电大学 | A kind of terahertz wave band Meta Materials sensor based on the transparent effect of class electromagnetically induced |
| CN109904578A (en) * | 2019-03-21 | 2019-06-18 | 北京大学 | A kind of efficient Terahertz artificial surface phasmon directional coupler and coupling process |
| KR20200060676A (en) * | 2018-11-21 | 2020-06-01 | 성균관대학교산학협력단 | NOVEL THREE-DIMENSIONAL PHASE DIRAC SEMIMETAL KZnBi AND MANUFACTURING METHOD OF SAME |
| CN111551521A (en) * | 2020-04-29 | 2020-08-18 | 枣庄学院 | Metamaterial sensor based on terahertz wave band and using method thereof |
| CN111678887A (en) * | 2020-04-15 | 2020-09-18 | 中国计量大学 | Novel polarization insensitive sensor based on T-shaped graphene coupling |
| CN111796437A (en) * | 2020-07-21 | 2020-10-20 | 上海师范大学 | Terahertz wave electronic control modulation method based on Dirac semimetal microstructure |
| CN113097034A (en) * | 2021-04-08 | 2021-07-09 | 山东建筑大学 | Slow wave structure based on coupling resonance |
-
2021
- 2021-11-11 CN CN202111332482.7A patent/CN114047163B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030076865A1 (en) * | 2001-09-21 | 2003-04-24 | The Regents Of The University Of California | Variable semiconductor all-optical buffer using slow light based on electromagnetically induced transparency |
| CN102713609A (en) * | 2009-11-23 | 2012-10-03 | 韩国标准科学研究院 | Apparatus and method for quantifying binding and dissociation kinetics of molecular interactions |
| CN108572162A (en) * | 2018-05-17 | 2018-09-25 | 重庆邮电大学 | A kind of terahertz wave band Meta Materials sensor based on the transparent effect of class electromagnetically induced |
| KR20200060676A (en) * | 2018-11-21 | 2020-06-01 | 성균관대학교산학협력단 | NOVEL THREE-DIMENSIONAL PHASE DIRAC SEMIMETAL KZnBi AND MANUFACTURING METHOD OF SAME |
| CN109904578A (en) * | 2019-03-21 | 2019-06-18 | 北京大学 | A kind of efficient Terahertz artificial surface phasmon directional coupler and coupling process |
| CN111678887A (en) * | 2020-04-15 | 2020-09-18 | 中国计量大学 | Novel polarization insensitive sensor based on T-shaped graphene coupling |
| CN111551521A (en) * | 2020-04-29 | 2020-08-18 | 枣庄学院 | Metamaterial sensor based on terahertz wave band and using method thereof |
| CN111796437A (en) * | 2020-07-21 | 2020-10-20 | 上海师范大学 | Terahertz wave electronic control modulation method based on Dirac semimetal microstructure |
| CN113097034A (en) * | 2021-04-08 | 2021-07-09 | 山东建筑大学 | Slow wave structure based on coupling resonance |
Non-Patent Citations (1)
| Title |
|---|
| 韩磊: "基于超材料的等离激元诱导透明效应及相关应用", 中国优秀硕士学位论文全文数据库 工程科技辑, no. 9, 30 September 2021 (2021-09-30), pages 1 - 15 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114047163B (en) | 2024-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Al Mahfuz et al. | Dual-core photonic crystal fiber-based plasmonic RI sensor in the visible to near-IR operating band | |
| CN108572162B (en) | Terahertz waveband metamaterial sensor based on quasi-electromagnetic induced transparency effect | |
| Haque et al. | Highly sensitive dual-core PCF based plasmonic refractive index sensor for low refractive index detection | |
| Nejad et al. | Supersensitive and tunable nano-biosensor for cancer detection | |
| CN108519352B (en) | Refractive index sensor based on metal-medium-metal waveguide Bragg grating | |
| CN110823841A (en) | D-type photonic crystal fiber multi-parameter SPR sensor based on magneto-optical effect | |
| CN111551521B (en) | Metamaterial sensor based on terahertz wave band and application method thereof | |
| Sun et al. | Design and optimization of silicon concentric dual-microring resonators for refractive index sensing | |
| CN112525852B (en) | Terahertz biosensor based on split resonant ring structure | |
| Dinodiya et al. | A comparative analysis of pressure sensing parameters for two dimensional photonic crystal sensors based on Si and GaAs | |
| Liu et al. | A highly sensitive D-type photonic crystal fiber infrared sensor with indium tin oxide based on surface plasmon resonance | |
| Lv et al. | Double-formant surface plasmon resonance for refractive index sensing by anti-resonance fibers with high sensitivity and wide detection range | |
| Salah et al. | Design of a plasmonic sensor based on a nanosized structure for biochemical application | |
| Almawgani et al. | Refractometric and temperature sensors based on one-dimensional binary photonic crystal including a superconducting layer | |
| Guo et al. | A plasmonic refractive-index sensor based multiple Fano resonance multiplexing in slot-cavity resonant system | |
| Wang et al. | Slow-light and sensing performance analysis based on plasmon-induced transparency in terahertz graphene metasurface | |
| Dhinakaran et al. | High amplitude sensitivity gold‐coated trichannel photonic crystal fibre for refractive index sensor | |
| Li et al. | Leaky mode combs in tilted fiber Bragg grating | |
| Panda et al. | Study of titanium nitride (TiN) as a novel plasmonic material for realization of Tamm-plasmon-polariton-based blood plasma sensor | |
| CN113252607A (en) | Refractive index sensor based on Tamm/Fano resonance | |
| CN114047163B (en) | Terahertz frequency band plasma sensor and working method thereof | |
| Wang et al. | Research on fiber-optic magnetic field sensor based on surface plasmon resonance | |
| CN114778481B (en) | Micrometer sensor based on terahertz metamaterial and detection method | |
| Haque et al. | Surface plasmonic resonance sensor for wider range of low refractive index detection | |
| CN113483792A (en) | Visible light to near-infrared dual-waveband embedded elliptical resonant cavity sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |