CN114038927B - Ferroelectric integrated graphene plasma terahertz detector with high response - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 83
- 230000004044 response Effects 0.000 title claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 34
- 230000010287 polarization Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 9
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims abstract description 7
- YMVZSICZWDQCMV-UHFFFAOYSA-N [O-2].[Mn+2].[Sr+2].[La+3] Chemical compound [O-2].[Mn+2].[Sr+2].[La+3] YMVZSICZWDQCMV-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002074 nanoribbon Substances 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 2
- 230000001808 coupling effect Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 14
- 238000004891 communication Methods 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000002127 nanobelt Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract
The invention belongs to the technical field of photoelectric communication, and particularly relates to a ferroelectric integrated graphene plasma terahertz detector with high response. The method mainly comprises the steps of taking strontium titanate as a substrate, lanthanum strontium manganese oxide as a bottom electrode, growing a layer of bismuth ferrite BFO on the bottom electrode by using an epitaxial method, obtaining two parallel rectangular local polarization electric domains by using a piezoelectric power microscope or a watermarking method, covering a layer of intrinsic graphene on the bismuth ferrite BFO, and adjusting the chemical potential of the graphene covered on the rectangular local polarization electric domains by applying different grid voltages to the bottom electrode so as to further adjust the absorption wave band of the terahertz detector.
Description
Technical Field
The invention belongs to the technical field of photoelectric communication, and particularly relates to a terahertz photoelectric detector. In particular to a structural design of a graphene terahertz detector based on a ferroelectric substrate.
Background
Terahertz (THz) waves refer to electromagnetic waves having a frequency in the range of 0.1 to 10THz (wavelength 3000 to 30 μm). The transition region from the macroscopic classical theory to the microscopic quantum theory is also the transition region from electronics to photonics. This band is also known as the "terahertz gap" of the electromagnetic spectrum due to the lack of high sensitivity detectors and relatively efficient terahertz sources in the past. Because the terahertz available bandwidth is larger, ultra-high-speed wireless data transmission can be realized, and the ultra-high-speed wireless data transmission system has larger application possibility in the sensing field, in recent years, research and development of terahertz wave band detection are continuously innovated, a plurality of different high-sensitivity detectors and terahertz sources are proposed, and a meaningful reference is provided for terahertz research roads.
In the Infrared (IR) and terahertz (THz) ranges, surface plasmons (SPPs) and Localized Surface Plasmons (LSPs) occur when graphene interacts with incident light. SPP is a surface wave excited at a material boundary; excitation of these charge waves is achieved by properly matching the free space and surface plasmon momentum of the system. LSP, on the other hand, is a sub-wavelength surface wave supported in a material, whose characteristic dimensions are comparable to the excitation wavelength. The latter aids the absorption mechanism and results in enhanced absorption. Graphene-based absorbers (GBAs) have been of interest for the past few years. Kok et al report cross-shaped graphene array absorbers that achieve 20% absorption; the zodiac et al propose a periodic graphene ring array, and introduce good angular polarization tolerance, realizing 25% absorption; square et al achieved 30% absorption by incorporating graphene nanodisk arrays into the active device. Although the maximum absorption of single-layer graphene is greatly improved compared with the ancestors, the maximum absorption is not more than 30%. Therefore, designing a graphene absorber with higher absorbance is a problem to be solved.
Disclosure of Invention
The invention aims to solve the problem that electromagnetic wave conduction between parallel graphene nanoribbons of a traditional silicon-based device is difficult, and further realize the coupling of plasmon effect excited by two graphene nanoribbons with high chemical potential.
Aiming at the problems of low graphene light absorption and difficult far infrared band detection, the invention provides a terahertz absorption structure with two parallel graphene nanobelts with high chemical potential on a ferroelectric base as a detection sensitive layer, wherein the device has ultra-high responsivity (23.21A/W) at the resonance frequency of 3.85 THz. The surface unit cell structure of the device consists of two parallel and symmetrical graphene nanoribbons with high chemical potential and intrinsic graphene around the graphene nanoribbons.
In order to solve the technical problems, the invention adopts the following technical means:
a ferroelectric integrated graphene plasma terahertz detector with high response is prepared as using Strontium Titanate (STO) as substrate, using Lanthanum Strontium Manganese Oxide (LSMO) as bottom electrode, utilizing epitaxial method to grow a layer of bismuth ferrite BFO on bottom electrode, utilizing piezoelectric power microscope (PFM) or watermark method to obtain two parallel rectangular local polarization electric domains, covering a layer of intrinsic graphene on bismuth ferrite BFO, applying different grid voltages to bottom electrode to adjust chemical potential of graphene covered on rectangular local polarization electric domains and further adjusting absorption band of terahertz detector.
In the above technical scheme, the length of two parallel rectangular local polarization electric domains is 0.5um, the width is 0.1um, and the interval is 0.5um.
In the technical scheme, the side length of the intrinsic graphene covered on the bismuth ferrite is 1um.
In the technical scheme, the chemical potential of the graphene covered on the rectangular local polarization electric domain is 0.4eV.
In the technical scheme, the chemical potential of the graphene which is not covered on the rectangular local polarization electric domain is 0.01eV.
The invention has the advantages that:
1. the invention proves that the double special strip graphene can show the characteristic of high response to far infrared under the influence of a specific ferroelectric domain.
2. The method has universality and is suitable for the influence of polarization of all ferroelectric materials on the light absorption of the patterned graphene.
3. According to the method, the two parallel graphene nanobelts with high chemical potential are introduced into the intrinsic graphene, so that the problem that electromagnetic wave conduction between the parallel graphene nanobelts of the traditional silicon-based device is difficult is solved, and the coupling of plasmon effect excited by the two graphene nanobelts with high chemical potential is further realized.
4. According to the invention, the problem of difficult electromagnetic wave conduction between the parallel graphene nanobelts of the traditional silicon-based device is solved by adopting the two parallel graphene nanobelts with high chemical potential, and the coupling of plasmon effect excited by the two parallel graphene nanobelts with high chemical potential is realized, so that the local surface excimer is enhanced, and the light absorption is increased in the terahertz wave band. Since the substrate is under the graphene of the conventional device, electromagnetic wave conduction between two graphene nanoribbons needs to be increased by one graphene pattern to connect, so that loss or manufacturing cost is generated. The polarization regulation of the ferroelectric substrate can be realized without conducting patterns, and only a specific region is required to be added with polarization to obtain a graphene region with high chemical potential.
5. Compared with square graphene nanoribbons, the two parallel graphene nanoribbons with high chemical potential have the advantages that plasmon effects excited by edges of short sides of the square graphene nanoribbons are coupled and mutually enhanced, and the square graphene nanoribbons are longer in side length and difficult to couple due to plasmon effects excited at opposite angles. Compared with the sector, the rectangular structure is simpler, the adjustable pattern parameters are basically consistent, the middle triangle pattern does not need to be manufactured for conduction, and the precision of the triangle pattern photoetching machine is very high, in particular to the vertex position.
Drawings
FIG. 1 is a schematic diagram of the structure of a simulation device and the shape of BFO domains
Fig. 2 to 5 are graphs of terahertz wave band light absorption corresponding to the graphene electrochemical potential of the upward polarization region of 0.4eV,0.6eV,0.7eV, and 0.8eV under the conditions of fixing the shape and size of the ferroelectric domain and the graphene chemical potential of the downward polarization region of 0.01eV.
FIGS. 6-7 show ferroelectric domains 0.5um long by 0.1um wide in the polarization direction, 0.5um apart, graphene electrochemical potentials of 0.4eV,0.8eV; and ferroelectric domains with a polarization direction downward have a side length of 1um, and when the chemical potential of the graphene is 0.01eV, different electric field distribution patterns are obtained.
Detailed Description
For ease of understanding, the present invention is further described below with reference to the accompanying drawings. The depicted example is a partial parametric example of the present invention. All other examples, which a person of ordinary skill in the art would obtain without making any inventive effort, are within the scope of the present invention based on the examples herein.
The invention provides a photoelectric detector based on ferroelectric material and graphene, comprising: a layer of BFO is grown by an epitaxial method by taking Strontium Titanate (STO) as a substrate and Lanthanum Strontium Manganese Oxide (LSMO) as a bottom electrode.
Bismuth ferrite BFO is ferroelectric material, and two parallel rectangular local polarized electric domains are obtained by using a piezoelectric microscope (PFM) or a watermarking method.
And a single graphene layer is transferred onto the polarized bismuth ferrite BFO.
And designing a device structure and patterning of graphene by using FDTD solution simulation software. By arranging the light source and placing the monitor, the overall transmittance, reflectivity, absorptivity and surface electric field intensity distribution of the designed device are calculated.
More specifically, the ferroelectric domains in the model represent the change in the electrochemical potential of graphene, and the change in the shape of the ferroelectric domains is represented by the different shapes of graphene with different electrochemical potentials.
Fig. 1 is a structural diagram of a device and a shape diagram of a unit BFO ferroelectric domain. In the structure shown in fig. 1, STO, LSMO, BFO is respectively arranged from bottom to top, and a layer of graphene is covered on the surface of the device. The structure of the single-cell ferroelectric domain is seen in fig. 1, and consists of two parallel symmetrical graphene nanoribbons with high chemical potential and intrinsic graphene around them. The white region is a high graphene chemical potential (polarization direction up) region (two parallel symmetric high chemical potential graphene nanoribbons), and the black region is an intrinsic graphene (polarization direction down) region. By using FDTD solution simulation software, the chemical potentials of graphene in different areas and different directions are changed, so that the influence caused by different polarization directions is realized. The length of the white area is set to be 0.5um, the width is set to be 0.1um, the interval is set to be 0.5um, the side length of the black area is set to be 1um, and the material is respectively set to be high chemical potential graphene and intrinsic chemical potential graphene so as to realize the structure of the black-wrapped white area. The length and width (X and Y directions) of the simulation area are 1um, and the boundary conditions of the X and Y directions are periodic boundary conditions, so that a large-range array coupling structure can be simulated by calculating only one unit area. The boundary condition in the Z direction is PML, and all electromagnetic waves can be absorbed.
Fig. 2 is a terahertz wave band absorption curve corresponding to different graphene chemical potentials under the condition of fixing the structural parameters of the device. And the terahertz wave band absorption diagram corresponds to the chemical potential of the graphene from top to bottom of 0.4eV,0.6eV,0.7eV and 0.8eV respectively. The chemical potential of graphene in the downward polarized region (black region) was set to 0.01eV, and the chemical potential of graphene in the upward polarized region (white region) was set to 0.4eV,0.6eV,0.7eV, and 0.8eV, respectively. It can be seen that the light absorption band region and the intensity of the device can be regulated and controlled by applying different grid voltages to the bottom electrode to adjust different graphene chemical potentials, wherein as the graphene chemical potential increases, the absorption peak moves leftwards, and the light absorption peak is strongest at the chemical potential of 0.4eV.
Fig. 3 is a graph of electric field distribution of a device surface corresponding to different chemical potentials of graphene under the condition of fixing the structural parameters of the device. The electric field distribution diagram corresponding to the chemical potential of the graphene is respectively 0.4eV and 0.8eV from top to bottom. The graph shows that the strongest electric field is positioned at two ends of the boundary between the white strip and the black area, so that the structure can realize local surface plasmons, and the light absorption capacity of the graphene is enhanced. And different chemical potentials can not influence the action area of the local surface plasmons, but only the intensity, so that the absorption mechanism is not influenced, and the regulation and control effect is proved.
From the above figures, it is clear that the selective absorption of light by the device can be altered by applying different gate voltages using different ferroelectric materials. And the light absorption intensity of the device is enhanced by utilizing the device structure.
Claims (4)
1. A high-response ferroelectric integrated graphene plasma terahertz detector is characterized in that strontium titanate is used as a substrate, lanthanum strontium manganese oxide is used as a bottom electrode, a layer of bismuth ferrite BFO is grown on the bottom electrode by an epitaxial method, two parallel rectangular local polarized electric domains are obtained by a piezoelectric power microscope or a watermarking method, a layer of intrinsic graphene is covered on the bismuth ferrite BFO to form a ferroelectric polarized substrate with adjustable and controllable functions, a pair of graphene nano-strip structures and an interval region, chemical potential of graphene is adjusted by utilizing the polarization of the ferroelectric substrate, and terahertz waves are detected by virtue of the graphene strip structures patterned by the ferroelectric domains, the high-conductivity intrinsic graphene interval region and the adjustable graphene plasmon coupling effect.
2. The highly responsive ferroelectric integrated graphene-plasma terahertz detector of claim 1, wherein the patterning consists of a pair of parallel symmetric graphene nanoribbons of high chemical potential and their surrounding intrinsic graphene.
3. A highly responsive ferroelectric integrated graphene-plasma terahertz detector as claimed in claim 2, wherein the graphene nanoribbons are 0.5 μm long by 0.1 μm wide and the graphene electrochemical potential is 0.4eV or 0.8eV.
4. The highly responsive ferroelectric integrated graphene plasma terahertz detector of claim 2, wherein the intrinsic graphene has a side length of 1 μm and the chemical potential of graphene is 0.01eV.
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| CN116154484B (en) * | 2023-04-04 | 2023-07-04 | 湖南工商大学 | Binary channels terahertz is absorption device entirely now |
| CN118324509A (en) * | 2024-04-15 | 2024-07-12 | 内蒙古科技大学 | Bismuth ferrite-based composite wave-absorbing material and preparation method thereof |
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| CN104916732A (en) * | 2014-03-12 | 2015-09-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene terahertz wave detector and manufacturing method thereof |
| CN111370523A (en) * | 2020-03-16 | 2020-07-03 | 电子科技大学 | Graphene terahertz wave tunable detector based on graphical ferroelectric domain |
| CN211123332U (en) * | 2019-11-04 | 2020-07-28 | 安阳师范学院 | Graphene-based broadband adjustable terahertz wave absorber |
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| WO2016140946A1 (en) * | 2015-03-02 | 2016-09-09 | University Of Maryland, College Park | Plasmon-enhanced terahertz graphene-based photodetector and method of fabrication |
| WO2016209666A2 (en) * | 2015-06-15 | 2016-12-29 | University Of Maryland, College Park | Hybrid metal-graphene terahertz optoelectronic system with tunable plasmonic resonance and method of fabrication |
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| CN104916732A (en) * | 2014-03-12 | 2015-09-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene terahertz wave detector and manufacturing method thereof |
| CN211123332U (en) * | 2019-11-04 | 2020-07-28 | 安阳师范学院 | Graphene-based broadband adjustable terahertz wave absorber |
| CN111370523A (en) * | 2020-03-16 | 2020-07-03 | 电子科技大学 | Graphene terahertz wave tunable detector based on graphical ferroelectric domain |
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| Junxiong Guo等.Simulation of tuning graphene plasmonic behaviors by ferroelectric domains for self-driven infrared photodetector applications.《Nanoscale》.2019,(第11期),第20869-20870页，图1. * |
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