CN114034922A - Current sensor and current detection chip - Google Patents
Current sensor and current detection chip Download PDFInfo
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- CN114034922A CN114034922A CN202111391453.8A CN202111391453A CN114034922A CN 114034922 A CN114034922 A CN 114034922A CN 202111391453 A CN202111391453 A CN 202111391453A CN 114034922 A CN114034922 A CN 114034922A
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- 238000001514 detection method Methods 0.000 title claims abstract description 25
- 238000005452 bending Methods 0.000 claims abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 15
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
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Abstract
The invention provides a current sensor and a current detection chip, wherein the current sensor comprises: bending the lead; a plurality of Hall sensors disposed in the plane of the bent wire; the signal processing unit is used for performing corresponding superposition processing according to the magnetic field around the bent wire acquired by the Hall sensor; and the output end outputs the processed signal. The current detection chip comprises the current sensor, the current sensor is processed in a packaging body of the chip to realize the technical scheme that the lead is set to be a bent lead, and more than one Hall sensor is arranged in the bent lead, so that the volumes of the current sensor and the current detection chip are greatly reduced. And then, corresponding superposition processing is carried out according to the magnetic field signals around the bent conducting wire acquired by the Hall sensor, so that the sensitivity and the precision of the current sensor and the current detection chip are improved.
Description
Technical Field
The invention relates to the field of current detection, in particular to a current sensor and a current detection chip.
Background
In the current sensor in the prior art, a hall element or an inductance coil is generally used as a sensing element to detect current, and the purpose of improving the sensitivity of the current sensor can be achieved by improving the magnetic field intensity or the amplification factor of the current in a mode of winding a current lead by a plurality of coils.
However, the current sensor is difficult to integrate in a small chip because the current wire is wound into a coil more than once, and the current sensor is limited by the influence of other signals, and noise is amplified at the same time.
Therefore, it is a technical problem to be solved in the prior art to provide a small current sensor with high sensitivity and accuracy.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a current sensor and a current detection chip, so that the current sensor and the current detection chip have small volume and high sensitivity and precision.
In order to solve the above problems, the present invention provides a current sensor. The current sensor includes: bending the lead; a plurality of Hall sensors disposed in the plane of the bent wire; the signal processing unit is used for performing corresponding superposition processing according to the magnetic field signal around the bent wire acquired by the Hall sensor; and the output end outputs the processed signal.
Further, the bent wire is formed by more than one U-shaped structure.
Furthermore, the hall sensor is a patch type hall sensor.
Further, the corresponding superposition processing according to the magnetic field signals around the bent wire collected by the hall sensor is to perform operation processing on the magnetic field signals in a mode of adding the same-direction magnetic fields and subtracting the opposite magnetic fields.
Further, the current sensor further includes: the processed signal is amplified before being output.
The invention also provides a current detection chip. The current detection chip comprises a current sensor; the current sensor includes: bending the lead; a plurality of Hall sensors disposed in the plane of the bent wire; the signal processing unit is used for performing corresponding superposition processing according to the magnetic field signal around the bent wire acquired by the Hall sensor; and the output end outputs the processed signal.
Further, the bent wire is formed by more than one U-shaped structure.
Furthermore, the hall sensor is a patch type hall sensor.
Further, the corresponding superposition processing according to the magnetic field signals around the bent wire collected by the hall sensor is to perform operation processing on the magnetic field signals in a mode of adding the same-direction magnetic fields and subtracting the opposite magnetic fields.
Further, the current detection chip further includes: the processed signal is amplified before being output.
According to the technical scheme, the conducting wire is arranged to be the bent conducting wire, and more than one Hall sensor is arranged in the bent conducting wire, so that the volumes of the current sensor and the current detection chip are greatly reduced. After the current wire is curved, the directions of current fields on the left side and the right side of the wire are different, and the signal processing unit performs corresponding superposition processing on magnetic field signals around the curved wire acquired by corresponding sensors, so that the sensitivity can be improved by multiples of N, N radians are realized to obtain N-fold sensitivity, the high signal-to-noise ratio is realized, and the sensitivity and the precision of the current sensor and the current detection chip are improved.
Drawings
FIG. 1 is a schematic diagram of a current sensor according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a current detection chip according to an embodiment of the invention.
Detailed Description
The following describes in detail a specific embodiment of a current sensor and a current detection chip according to the present invention with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a current sensor according to an embodiment of the present invention. The current sensor includes: input end IN, output OUT still include: bending the wire W; four Hall sensors H1-H4 arranged on the plane of the bent wire W; a signal processing unit (not shown) for performing corresponding superposition processing according to the magnetic field signals around the bent conducting wire collected by the Hall sensors H1-H4; and the output end OUT outputs the processed signal.
In the present embodiment, the bent conductor is formed of four U-shaped structures 1 to 4. The Hall sensors H1-H4 are patch type Hall sensors.
The corresponding superposition processing according to the magnetic field signals around the bent conducting wire collected by the Hall sensor is to perform operation processing on the magnetic field signals in a mode of adding the same-direction magnetic fields and subtracting the opposite magnetic fields. In this embodiment, the directions of the magnetic fields of the hall sensor H1 and the hall sensor H3 are the same, the directions of the magnetic fields of the hall sensor H2 and the hall sensor H4 are the same, and the directions of the magnetic fields of the hall sensor H1 and the hall sensor H3 are opposite to the directions of the magnetic fields of the hall sensor H2 and the hall sensor H4. Therefore, when the current variation flowing through the wire is calculated, the hall sensor H1 and the magnetic field signal around the bent wire collected by the hall sensor H3 can be correspondingly superposed to obtain a first signal; correspondingly superposing a Hall sensor H1 and a magnetic field signal around the bent conducting wire acquired by the Hall sensor H3 to obtain a second signal; and then the first signal and the second signal are subjected to subtraction operation, so that the current sensor outputs a current signal which is four times of the current change in the wire, 4 radians are realized to obtain 4 times of sensitivity, and a high signal-to-noise ratio is realized.
In other embodiments the current sensor further comprises: the processed signal is amplified before being output.
According to the technical scheme, the lead is set to be the bent lead W, and the four Hall sensors H1-H4 are arranged in the bent lead W, so that the volume of the current sensor is greatly reduced. After the current wire is curved, the directions of current fields on the left side and the right side of the wire are different, and the signal processing unit performs corresponding superposition processing on magnetic field signals around the curved wire acquired by corresponding sensors, so that the sensitivity can be improved by multiples of N, N radians are realized to obtain N-fold sensitivity, the high signal-to-noise ratio is realized, and the sensitivity and the precision of the current sensor and the current detection chip are improved.
Fig. 2 is a schematic diagram of a current detection chip according to an embodiment of the invention. The current detection chip comprises a current sensor M1 and a lead frame M2, and the current sensor M1 is placed in the lead frame M2. FIG. 1 is a schematic diagram of a current sensor according to an embodiment of the present invention. The current sensor includes: input end IN, output OUT still include: bending the wire W; a plurality of Hall sensors H1-H4 arranged on the plane of the bent wire W; a signal processing unit (not shown) for performing corresponding superposition processing according to the magnetic field signals around the bent conducting wire collected by the Hall sensors H1-H4; and the output end OUT outputs the processed signal.
Referring to fig. 1, in the present embodiment, the bent conductive wire is composed of four U-shaped structures 1-4. The Hall sensors H1-H4 are patch type Hall sensors.
The corresponding superposition processing according to the magnetic field signals around the bent conducting wire collected by the Hall sensor is to perform operation processing on the magnetic field signals in a mode of adding the same-direction magnetic fields and subtracting the opposite magnetic fields. In this embodiment, the directions of the magnetic fields of the hall sensor H1 and the hall sensor H3 are the same, the directions of the magnetic fields of the hall sensor H2 and the hall sensor H4 are the same, and the directions of the magnetic fields of the hall sensor H1 and the hall sensor H3 are opposite to the directions of the magnetic fields of the hall sensor H2 and the hall sensor H4. Therefore, when the current variation flowing through the wire is calculated, the hall sensor H1 and the magnetic field signal around the bent wire collected by the hall sensor H3 can be correspondingly superposed to obtain a first signal; correspondingly superposing a Hall sensor H1 and a magnetic field signal around the bent conducting wire acquired by the Hall sensor H3 to obtain a second signal; and then the first signal and the second signal are subjected to subtraction operation, so that the current sensor outputs a current signal which is four times of the current change in the wire, 4 radians are realized to obtain 4 times of sensitivity, and a high signal-to-noise ratio is realized.
In other embodiments the current sensor further comprises: the processed signal is amplified before being output.
According to the technical scheme, the lead is set to be the bent lead W, and the four Hall sensors H1-H4 are arranged in the bent lead W, so that the volume of the current detection chip is greatly reduced. After the current lead is curved, the directions of current fields on the left side and the right side of the lead are different, and corresponding magnetic field signals around the bent lead collected by corresponding sensors are subjected to corresponding superposition processing, so that the sensitivity can be improved by multiples, N radians can be obtained by N sensitivities, the high signal-to-noise ratio is realized, and the sensitivity and the precision of the current sensor and the current detection chip are improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A current sensor, comprising:
bending the lead;
a plurality of Hall sensors disposed in the plane of the bent wire;
the signal processing unit is used for performing corresponding superposition processing according to the magnetic field signal around the bent wire acquired by the Hall sensor;
and the output end outputs the processed signal.
2. The current sensor of claim 1, wherein the bent wire is comprised of more than one U-shaped structure.
3. The current sensor of claim 1, wherein the hall sensor is a surface mount hall sensor.
4. The current sensor according to claim 1, wherein the corresponding superposition processing according to the magnetic field signal around the curved wire collected by the hall sensor is an operation processing according to a mode of adding a same-direction magnetic field and subtracting a reverse magnetic field.
5. The current sensor of claim 1, further comprising: the processed signal is amplified before being output.
6. A current detection chip, comprising: a current sensor;
the current sensor includes:
bending the lead;
a plurality of Hall sensors disposed in the plane of the bent wire;
the signal processing unit is used for performing corresponding superposition processing according to the magnetic field signal around the bent wire acquired by the Hall sensor;
and the output end outputs the processed signal.
7. The current sensing chip of claim 6, wherein said bent conductive wire is formed of one or more U-shaped structures.
8. The current detecting chip according to claim 6, wherein the Hall sensor is a surface mount Hall sensor.
9. The current detection chip according to claim 6, wherein the corresponding superposition processing according to the magnetic field signal around the bent conductive wire collected by the hall sensor is to perform operation processing on the magnetic field signal in a manner of adding a same-direction magnetic field and subtracting a reverse magnetic field.
10. The current detection chip according to claim 6, further comprising: the processed signal is amplified before being output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111391453.8A CN114034922A (en) | 2021-11-23 | 2021-11-23 | Current sensor and current detection chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111391453.8A CN114034922A (en) | 2021-11-23 | 2021-11-23 | Current sensor and current detection chip |
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| CN114034922A true CN114034922A (en) | 2022-02-11 |
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| CN202111391453.8A Pending CN114034922A (en) | 2021-11-23 | 2021-11-23 | Current sensor and current detection chip |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100045286A1 (en) * | 2008-08-25 | 2010-02-25 | Robert Sueffer GmbH & Co. | Current detection apparatus |
| US20100156394A1 (en) * | 2008-12-18 | 2010-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
| WO2014192625A1 (en) * | 2013-05-30 | 2014-12-04 | 株式会社村田製作所 | Current sensor |
| DE202013010178U1 (en) * | 2013-11-11 | 2015-02-13 | Seuffer gmbH & Co. KG | Current detection device |
| CN106353561A (en) * | 2016-09-12 | 2017-01-25 | 上海兴工微电子有限公司 | Current detection chip and current detection method |
| CN208109917U (en) * | 2018-03-12 | 2018-11-16 | 宁波锦澄电子科技股份有限公司 | A kind of unshielded anti-interference current sensor |
| CN213600772U (en) * | 2020-09-01 | 2021-07-02 | 江苏多维科技有限公司 | Current sensor |
| CN113376421A (en) * | 2020-03-10 | 2021-09-10 | 新纳传感系统有限公司 | Current sensor with S-shaped conductor |
-
2021
- 2021-11-23 CN CN202111391453.8A patent/CN114034922A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100045286A1 (en) * | 2008-08-25 | 2010-02-25 | Robert Sueffer GmbH & Co. | Current detection apparatus |
| US20100156394A1 (en) * | 2008-12-18 | 2010-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
| WO2014192625A1 (en) * | 2013-05-30 | 2014-12-04 | 株式会社村田製作所 | Current sensor |
| DE202013010178U1 (en) * | 2013-11-11 | 2015-02-13 | Seuffer gmbH & Co. KG | Current detection device |
| CN106353561A (en) * | 2016-09-12 | 2017-01-25 | 上海兴工微电子有限公司 | Current detection chip and current detection method |
| CN208109917U (en) * | 2018-03-12 | 2018-11-16 | 宁波锦澄电子科技股份有限公司 | A kind of unshielded anti-interference current sensor |
| CN113376421A (en) * | 2020-03-10 | 2021-09-10 | 新纳传感系统有限公司 | Current sensor with S-shaped conductor |
| CN213600772U (en) * | 2020-09-01 | 2021-07-02 | 江苏多维科技有限公司 | Current sensor |
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Effective date of registration: 20220509 Address after: 201203 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Applicant after: Shanghai Xinggan Semiconductor Co.,Ltd. Address before: Room 174030, No.1, Huishan Economic Development Zone, Wuxi, Jiangsu Province Applicant before: Jiangsu Xingzhou Microelectronics Co.,Ltd. |
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