CN114024195A - Semiconductor laser system for medical treatment - Google Patents
Semiconductor laser system for medical treatment Download PDFInfo
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- CN114024195A CN114024195A CN202111351688.4A CN202111351688A CN114024195A CN 114024195 A CN114024195 A CN 114024195A CN 202111351688 A CN202111351688 A CN 202111351688A CN 114024195 A CN114024195 A CN 114024195A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 238000011282 treatment Methods 0.000 title claims description 18
- 238000001514 detection method Methods 0.000 claims abstract description 62
- 239000013307 optical fiber Substances 0.000 claims abstract description 43
- 230000008878 coupling Effects 0.000 claims abstract description 4
- 238000010168 coupling process Methods 0.000 claims abstract description 4
- 238000005859 coupling reaction Methods 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000028161 membrane depolarization Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000036555 skin type Effects 0.000 description 3
- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Chemical compound O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
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- 238000000968 medical method and process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000002834 transmittance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000035617 depilation Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
Abstract
The present invention provides a semiconductor laser system for medical use, comprising: the laser device comprises a first laser unit, an Nth laser unit, a Nth laser unit and a Nth laser unit, wherein N is an integer larger than 1, the Nth laser unit comprises an Nth semiconductor laser chip, N is an integer larger than or equal to 1 and smaller than or equal to N, and the Nth semiconductor laser chip is suitable for emitting nth initial laser; the focusing unit is suitable for focusing and coupling the nth initial laser to the optical fiber, and the optical fiber is suitable for transmitting the nth initial laser and the nth feedback laser; the light splitting unit is suitable for splitting the nth feedback laser and outputting nth detection laser; the detection unit is suitable for receiving the first detection laser to the Nth detection laser and acquiring the working wavelength; and the control unit is suitable for controlling the first semiconductor laser chip to the Nth semiconductor laser chip to emit laser with working wavelength. The semiconductor laser system can realize the selection of the optimal wavelength without replacing a semiconductor laser chip, and is simple to operate.
Description
Technical Field
The invention relates to the technical field of laser treatment, in particular to a medical semiconductor laser system.
Background
Semiconductor lasers have the advantages of small size, light weight, high efficiency, long service life, wide wavelength range and the like, and are increasingly applied to the laser medical field, such as laser cosmetology, laser depilation and ophthalmic surgery. Clinical practice shows that the selection of the laser wavelength output by the semiconductor laser is closely related to the treatment times and treatment effects, such as: laser light with a wavelength of 755nm is superior to laser light with a wavelength of 810nm in melanin absorption, while laser light with a wavelength of 810nm is superior to laser light with a wavelength of 755nm in skin penetration depth. Clinically, the treatment effect of the laser with the same wavelength on patients with different skin types is obviously different, and the treatment effect of the laser with the same wavelength on different tissues of the same patient is also different, so that the selection of the laser with the proper wavelength is very important for the treatment effect.
The existing laser medical process is often configured with a plurality of semiconductor lasers with different wavelengths, and the wavelengths are selected by replacing the semiconductor lasers, so that the working process is complicated.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect of the complicated laser medical method in the prior art, and to provide a semiconductor laser system for medical treatment.
The present invention provides a semiconductor laser system for medical use, comprising: the laser device comprises a first laser unit, an Nth laser unit, a Nth laser unit and a Nth laser unit, wherein N is an integer larger than 1, the Nth laser unit comprises an Nth semiconductor laser chip, N is an integer larger than or equal to 1 and smaller than or equal to N, the Nth semiconductor laser chip is suitable for emitting nth initial laser, and the wavelengths of the first initial laser and the Nth initial laser are different; the focusing unit is suitable for focusing and coupling the nth initial laser to the optical fiber, and the optical fiber is suitable for transmitting the nth initial laser and the nth feedback laser corresponding to the nth initial laser; the beam splitting unit is positioned between the nth laser unit and the focusing unit, is suitable for splitting the nth feedback laser and outputting nth detection laser, and does not overlap with the optical path of the nth initial laser transmitted from the nth laser unit to the beam splitting unit; the detection unit is suitable for respectively receiving the first detection laser to the Nth detection laser and acquiring working wavelengths according to the first detection laser to the Nth detection laser; and the control unit is electrically connected with the detection unit and is suitable for controlling the first semiconductor laser chip to the Nth semiconductor laser chip to emit laser with working wavelength.
Optionally, the detecting unit includes: a photodetector adapted to receive the nth detection laser light and detect an intensity of the nth detection laser light; the analysis module is electrically connected with the photoelectric detector and is suitable for acquiring a first intensity ratio to an Nth intensity ratio and acquiring a working wavelength according to the minimum value of the first intensity ratio to the Nth intensity ratio, wherein the Nth intensity ratio is the ratio of the intensity of the nth detection laser to the intensity of the nth initial laser emitted by the nth semiconductor laser chip; the wavelength of the initial laser light emitted by the semiconductor laser chip corresponding to the minimum value of the first to nth intensity ratios is used as the working wavelength.
Optionally, the semiconductor laser system for medical use further includes: the power module, power module's input with the control unit electricity is connected, power module's output respectively with first semiconductor laser chip to Nth semiconductor laser chip electricity is connected, power module is the independent output power of multichannel, the control unit is suitable for control power module gets into the drive current of first semiconductor laser chip to Nth semiconductor laser chip in order to adjust.
Optionally, the power module is a modulated pulse power supply; the control unit is further adapted to control the pulse frequency and pulse width of the modulated pulsed power supply.
Optionally, the semiconductor laser system for medical use further includes: the optical fiber, the detection unit and the control unit are positioned outside the packaging shell.
Optionally, the light splitting unit is a polarizing beam splitter; the length of the optical fiber is more than 1 meter.
Optionally, the optical fiber includes a first transmission region, a second transmission region and a third transmission region, one end of the second transmission region is connected to the first transmission region, the other end of the second transmission region is connected to the third transmission region, and the second transmission region is wound around one or more turns.
Optionally, the radius of each turn of the second transmission region is less than 200 times the diameter of the optical fiber.
Optionally, the light splitting unit is a non-polarizing beam splitter.
Optionally, the first laser unit to the nth laser unit are arranged in parallel and spaced from each other; the nth laser unit further comprises an nth collimation unit, and the nth collimation unit is suitable for collimating the nth initial laser; the nth laser unit further comprises an nth dichroic mirror or an nth reflecting mirror, wherein the nth reflecting mirror is suitable for reflecting the collimated nth initial laser to the light splitting unit, or the nth dichroic mirror is suitable for reflecting the collimated nth initial laser to the light splitting unit.
The technical scheme of the invention has the following advantages:
1. in the semiconductor laser system for medical treatment provided by the invention, the nth initial laser emitted by the nth semiconductor laser chip in the nth laser unit is focused and coupled to the optical fiber by the focusing unit, is emitted from one end of the optical fiber and then irradiates on an affected part, and is reflected by the affected part to form nth feedback laser; the nth feedback laser enters the optical fiber, is transmitted out from one end of the optical fiber and then irradiates on the light splitting unit through the focusing unit, so that the nth detection laser is output by the light splitting unit in a light splitting mode, and the detection unit receives and detects the nth detection laser; the detection unit is suitable for acquiring working wavelengths after receiving and detecting the first detection laser to the Nth detection laser; the control unit then controls the first semiconductor laser chip to the Nth semiconductor laser chip to emit laser light having an operating wavelength for treatment. Therefore, the medical semiconductor laser system can realize the selection of the optimal wavelength without replacing a semiconductor laser chip, is simple to operate, and can meet the requirements of patients with different skin types and different skin colors and different affected parts on laser with different wavelengths.
In addition, the nth initial laser irradiates on the affected part and then is absorbed by the affected part, the formed nth feedback laser is split by the light splitting unit, so that the intensity of the nth feedback laser irradiating to the nth semiconductor laser chip through the light splitting unit is far smaller than that of the nth initial laser, therefore, the nth semiconductor laser chip cannot generate temperature rise to a large extent due to the nth feedback laser, the unstable degree of output power of the nth semiconductor laser chip caused by the nth feedback laser is further weakened, and the semiconductor laser chip is prevented from being damaged.
2. The invention provides a medical semiconductor laser system, wherein a light splitting unit is a polarizing beam splitter; the length of the optical fiber is more than 1 meter. The polarization direction of the nth feedback laser is changed by utilizing the depolarization characteristic of the long-distance optical fiber to the light beam, so that the nth feedback laser can be split when passing through the polarization beam splitter, and the nth detection laser is output.
3. The invention provides a medical semiconductor laser system, wherein the second transmission area of the optical fiber is coiled for one circle or a plurality of circles. The optical fiber is bent and coiled, so that the distribution of the transmission mode in the optical fiber can be further changed, and the depolarization effect is increased. The space occupied by the optical fiber can be reduced, and the integration level of the semiconductor laser system for medical use is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a semiconductor laser system for medical use according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a control unit and a detection unit in an embodiment of the present invention;
FIG. 3 is a schematic diagram of the structure of the optical fiber shown in FIG. 1;
fig. 4 is a schematic structural diagram of another semiconductor laser system for medical use according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a laser assembly according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another laser assembly according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of another laser assembly in an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of another laser assembly in an embodiment of the present invention;
description of reference numerals:
1-a laser assembly; 111-a first semiconductor laser chip; 112-a first collimating unit; 113-a first mirror; 114-a first dichroic mirror; 121-a second semiconductor laser chip; 122-a second collimating unit; 123-a second mirror; 124-a second dichroic mirror; 131-a third semiconductor laser chip; 132-a third collimating unit; 133-a third mirror; 134-a third dichroic mirror; 2-a light splitting unit; 21-a non-polarizing beam splitter; 3-a focusing unit; 4-an optical fiber; 41-a first transport zone; 42-a second transmission zone; 43-a third transport zone; 5-a detection unit; 51-a photodetector; 52-an analysis module; 6-a control unit; 7-a power supply module; 8-the affected part.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Referring to fig. 1, the present embodiment provides a semiconductor laser system for medical use, including:
the laser component 1 comprises a first laser unit to an Nth laser unit, wherein N is an integer larger than 1, the Nth laser unit comprises an Nth semiconductor laser chip, N is an integer larger than or equal to 1 and smaller than or equal to N, the Nth semiconductor laser chip is suitable for emitting nth initial laser, and the wavelengths of the first initial laser to the Nth initial laser are different;
the focusing unit 3 is suitable for focusing and coupling the nth initial laser to the optical fiber 4, and the optical fiber 4 is suitable for transmitting the nth initial laser and the nth feedback laser corresponding to the nth initial laser;
the beam splitting unit 2 is positioned between the nth laser unit and the focusing unit 3, the beam splitting unit 2 is suitable for splitting the nth feedback laser and outputting nth detection laser, and the optical path of the nth detection laser does not coincide with the optical path of the nth initial laser transmitted from the nth laser unit to the beam splitting unit 2;
the detection unit 5 is suitable for respectively receiving the first detection laser to the Nth detection laser and acquiring working wavelengths according to the first detection laser to the Nth detection laser;
and the control unit 6 is electrically connected with the detection unit 5, and the control unit 6 is suitable for controlling the first semiconductor laser chip to the Nth semiconductor laser chip to emit laser with working wavelength.
In the semiconductor laser system for medical use, after the nth initial laser light emitted by the nth semiconductor laser chip in the nth laser unit passes through the light splitting unit 2, the nth initial laser light is focused and coupled to the optical fiber 4 by the focusing unit 3, is emitted from one end of the optical fiber 4, then irradiates on the affected part 8, and is reflected by the affected part 8 to form nth feedback laser light; the nth feedback laser enters the optical fiber 4, is transmitted out from one end of the optical fiber 4 and then irradiates the light splitting unit 2 through the focusing unit 3, so that the light splitting unit 2 splits and outputs nth detection laser, and the detection unit 5 receives and detects the nth detection laser; the detection unit 5 is adapted to acquire the working wavelength after receiving and detecting the first to nth detection lasers; the control unit 6 then controls the first to nth semiconductor laser chips to emit laser light having an operating wavelength for treatment. Therefore, the medical semiconductor laser system can realize the selection of the optimal wavelength without replacing a semiconductor laser chip, is simple to operate, and can meet the requirements of patients with different skin types and different skin colors and different affected parts on laser with different wavelengths.
It should be understood that when the nth feedback laser light is split by the splitting unit 2, a part of the nth feedback laser light is converted into the nth detection laser light output, and another part of the nth feedback laser light is irradiated to the nth semiconductor laser chip through the splitting unit 2. That is, after the nth initial laser beam is irradiated on the affected part 8, a part of energy is absorbed by the affected part 8, and the formed nth feedback laser beam is split by the light splitting unit 2, so that the intensity of the nth feedback laser beam irradiated to the nth semiconductor laser chip through the light splitting unit 2 is far less than that of the nth initial laser beam, and therefore the nth semiconductor laser chip does not generate a temperature rise to a large extent due to the nth feedback laser beam, and further the unstable degree of output power of the nth semiconductor laser chip caused by the nth feedback laser beam is weakened, and the semiconductor laser chip is prevented from being damaged.
It should be understood that one end of the optical fiber 4 may act directly on the affected part 8, or may act on the affected part 8 after being shaped by other optical elements. The nth initial laser is linearly polarized light.
In the present implementation, referring to fig. 2, the detection unit 5 comprises: a photodetector 51, the photodetector 51 being adapted to receive the nth detection laser light and detect the intensity of the nth detection laser light; the analysis module 52, the analysis module 52 is electrically connected to the photodetector 51, the analysis module 52 is adapted to obtain a first to nth intensity ratio, and obtain the working wavelength according to the minimum value of the first to nth intensity ratio, where the nth intensity ratio is the ratio of the intensity of the nth detection laser to the intensity of the nth initial laser emitted by the nth semiconductor laser chip; the wavelength of the initial laser light emitted by the semiconductor laser chip corresponding to the minimum value of the first to nth intensity ratios is used as the working wavelength. Specifically, the photodetector 51 transmits a first electrical signal having the intensity information of the nth detection laser light to the analysis module 52 after detecting the intensity of the nth detection laser light, and the analysis module 52 receives the first electrical signal to obtain the intensity information of the nth detection laser light and calculate an nth intensity ratio; after the analysis module 52 obtains the first to nth intensity ratios, the analysis module 52 compares the relative magnitudes of the first to nth intensity ratios, and selects the wavelength of the initial laser corresponding to the minimum value of the first to nth intensity ratios as the operating wavelength.
It should be understood that the semiconductor laser system for medical use can also irradiate the nth initial laser light in the air before the nth initial laser light is irradiated to the affected part 8 to obtain the intensity of the nth initial laser light reflected by the air, which is defined as nth calibration intensity herein, so that the nth calibration intensity is subtracted as a background in the process of calculating the nth intensity ratio by the detection unit 5 to obtain a more accurate nth intensity ratio, thereby enabling the selection of the optimal wavelength to be more accurate.
It should be understood that the intensity of the nth initial laser is an nth preset value, and the nth preset value is stored in the analysis module 52, so that after the intensity of the nth detection laser is obtained, the analysis module 52 can calculate the nth intensity ratio. Specifically, the first preset value to the nth preset value may be the same value or different values; preferably, the first preset value to the nth preset value are the same value.
In this embodiment, with continued reference to fig. 2, the semiconductor laser system for medical use further includes: the power module 7 is a multi-path independent output power supply, the output end of the power module 7 is electrically connected with the first semiconductor laser chip to the Nth semiconductor laser chip respectively, and the power module 7 is suitable for supplying power to the first semiconductor laser chip to the Nth semiconductor laser chip; the input end of the power module 7 is electrically connected with the control unit 6, and the control unit 6 is suitable for controlling the power module 7 to adjust the driving current entering the first semiconductor laser chip to the Nth semiconductor laser chip. Specifically, the control unit 6 outputs a second electrical signal to the power module 7, the power module 7 sequentially supplies power to the first semiconductor laser chip to the nth semiconductor laser chip after receiving the second electrical signal, the first semiconductor laser chip to the nth semiconductor laser chip sequentially emit initial laser, and the analysis module 52 immediately obtains a first intensity ratio to an nth intensity ratio to obtain a working wavelength; after the working wavelength is obtained, the control unit 6 outputs a third electrical signal to the power module 7, and after the power module 7 receives the third electrical signal, the power module supplies power to the semiconductor laser chip which emits the initial laser light and has the working wavelength, and does not supply power to the semiconductor laser chip which emits the initial laser light and has the wavelength which is not the working wavelength, so that the treatment is performed at the working wavelength.
It should be noted that the steps of the power module 7 sequentially supplying power to the first to nth semiconductor laser chips and the analyzing module 52 sequentially obtaining the first to nth intensity ratios include: the power module 7 supplies power to the kth semiconductor laser chip to enable the kth semiconductor laser chip to emit kth initial laser, the analysis module 52 correspondingly obtains a kth intensity ratio, and k is an integer which is greater than or equal to 1 and less than or equal to N-1; after the analysis module 52 obtains the k-th intensity ratio, the power module 7 supplies power to the (k + 1) -th semiconductor laser chip, so that the (k + 1) -th semiconductor laser chip emits the (k + 1) -th initial laser, and the analysis module 52 correspondingly obtains the (k + 1) -th intensity ratio.
Further, the control unit 6 is further adapted to control the power module 7 to sequentially perform a first working phase to a Q-th working phase, Q is an integer greater than 1, wherein the Q-th working phase is a period of time from the first semiconductor laser chip to the N-th semiconductor laser chip to sequentially emit initial laser until the medical semiconductor laser system operates at the Q-th working wavelength, and Q is an integer greater than or equal to 1 and less than or equal to Q. Specifically, after the semiconductor laser system for medical use works with a working wavelength for a period of time, the control unit 6 outputs the second electrical signal to the power module 7 again, so that the first semiconductor laser chip to the nth semiconductor laser chip sequentially emit the initial laser again, and the analysis module 52 detects the working wavelength again, thereby ensuring that the lasers used at different moments in the treatment process all have the optimal wavelengths, improving the treatment effect, and even if the position of treatment is finely adjusted, the semiconductor laser system for medical use does not need to be additionally controlled.
Further, the control unit 6 is also adapted to control the duration of the qth working phase. Specifically, the qth working phase comprises the qth working phase which is carried out in sequence1Working phase and q2Working phase, said q1The working stage is that the first semiconductor laser chip to the Nth semiconductor laser chip sequentially emit initial laser until the q-th working wavelength is obtained2The working stage is that the medical semiconductor laser system carries out treatment at the q operating wavelength.
Further, the control unit 6 is further adapted to control the qth1Duration of working phase and qth2The duration of the working phase. The q th2The duration of the working phase is greater than or equal to 1 s.
Further, the power module 7 may be a modulated pulse power supply; the control unit 6 is further adapted to control the pulse frequency, pulse width, pulse current of the modulated pulse power supply. Specifically, the pulse width may be set to the order of milliseconds.
It is to be understood that the control unit 6 is also adapted to control the opening and closing of the detection unit 5. Specifically, the process is carried out at q1During the working phase, the control unit 6 controls the opening of the photoelectric detector 51 and the analysis module 52; at the q th2During the working phase, the control unit 6 controls the photo detector 51 and the analysis module 52 to be turned off.
In this embodiment, the focusing unit 3 includes a focusing lens, and one end of the optical fiber 4 is located at a focal position of the focusing lens, so as to ensure that the nth initial laser light can be coupled to the optical fiber 4 through the focusing unit 3 in a focusing manner.
In one embodiment, as shown in fig. 1, the light splitting unit 2 is a polarizing beam splitter; the length of the optical fiber 4 is greater than 1 meter. The polarization direction of the nth feedback laser is changed by utilizing the depolarization characteristic of the long-distance optical fiber to the light beam, so that the nth feedback laser can be split when passing through the polarization beam splitter, and the nth detection laser is output. Further, as shown in fig. 3, the optical fiber 4 includes a first transmission region 41, a second transmission region 42 and a third transmission region 43, one end of the second transmission region 42 is connected to the first transmission region 41, the other end of the second transmission region 42 is connected to the third transmission region 43, and the second transmission region 42 is wound by one turn or several turns. The optical fiber 4 is bent and coiled, so that the distribution of the transmission mode in the optical fiber 4 can be further changed, and the depolarization effect is increased. The space occupied by the optical fiber 4 can be reduced, and the integration level of the semiconductor laser system for medical use can be improved. In particular, the radius of each turn of the second transmission zone 42 is less than 200 times the diameter of the optical fiber 4; the polarizing beam splitter includes, but is not limited to, a polarizing beam splitter prism.
In another embodiment, referring to fig. 4, the light splitting unit 2 is a non-polarizing beam splitter 21. The non-polarizing beam splitter 21 includes, but is not limited to, a coated optical glass in which a film is a partially reflective film. In the process of transmitting the nth initial laser light to the focusing unit 3, a part of the nth initial laser light transmits through the non-polarizing beam splitter 21, another part of the nth initial laser light is reflected by the non-polarizing beam splitter 21 and cannot be used, and the intensity of the nth initial laser light transmitted through the non-polarizing beam splitter 21 is related to the transmittance of the non-polarizing beam splitter 21. For example, when the transmittance of the non-polarizing beam splitter 21 is 95% and the reflectance is 5%, the nth initial laser light will generate 5% energy loss when passing through the non-polarizing beam splitter 21, and when the nth feedback laser light is irradiated to the non-polarizing beam splitter 21, 95% of the intensity of the nth feedback laser light is irradiated to the nth semiconductor laser chip through the non-polarizing beam splitter 21, and 5% of the intensity of the nth feedback laser light is received by the photodetector 51.
In the present embodiment, referring to fig. 5-8, the first to nth laser units are arranged in parallel and spaced apart from each other; the nth laser unit further comprises an nth collimation unit, and the nth collimation unit is suitable for collimating the nth initial laser; the nth laser unit further comprises an nth dichroic mirror or an nth reflecting mirror, wherein the nth reflecting mirror is suitable for reflecting the collimated nth initial laser to the light splitting unit 2, or the nth dichroic mirror is suitable for reflecting the collimated nth initial laser to the light splitting unit 2. The nth collimating unit comprises an nth fast collimating mirror and an nth slow collimating mirror.
Specifically, in the first embodiment, the nth laser unit includes an nth semiconductor laser chip, an nth collimating unit and an nth reflecting mirror, which are sequentially disposed, and the first reflecting mirrors 113 to the nth reflecting mirrors are arranged in a staggered manner so that the first initial laser light to the nth initial laser light are closely arranged after passing through the nth reflecting mirror. The structure of the nth laser unit is convenient for the arrangement of a plurality of semiconductor laser chips and improves the output power. Fig. 5 exemplarily shows an arrangement structure of the first to third laser units, wherein the first laser unit includes a first semiconductor laser chip 111, a first collimating unit 112, and a first reflecting mirror 113, which are sequentially disposed, the second laser unit includes a second semiconductor laser chip 121, a second collimating unit 122, and a second reflecting mirror 123, which are sequentially disposed, the third laser unit includes a third semiconductor laser chip 131, a third collimating unit 132, and a third reflecting mirror 133, which are sequentially disposed, and the first reflecting mirror 113, the second reflecting mirror 123, and the third reflecting mirror 133 are arranged in a staggered manner.
In a second embodiment, the nth laser unit comprises an nth semiconductor laser chip, an nth collimating unit and an nth dichroic mirror which are sequentially arranged, and the first initial laser to the nth initial laser are combined after passing through the nth dichroic mirror; the structure of the nth laser unit can improve the uniformity of the nth initial laser irradiating on the affected part. Fig. 6 exemplarily shows an arrangement structure of first to third laser units, where the first laser unit includes a first semiconductor laser chip 111, a first collimating unit 112, and a first dichroic mirror 114, which are sequentially arranged, the second laser unit includes a second semiconductor laser chip 121, a second collimating unit 122, and a second dichroic mirror 124, which are sequentially arranged, the third laser unit includes a third semiconductor laser chip 131, a third collimating unit 132, and a third dichroic mirror 134, which are sequentially arranged, the first initial laser light from the first semiconductor laser chip 111 sequentially passes through the second dichroic mirror 124 and the third dichroic mirror 134 after being reflected by the first dichroic mirror 114, and the second initial laser light from the second semiconductor laser chip 121 sequentially passes through the third dichroic mirror 134 after being reflected by the second dichroic mirror 124.
In the third embodiment, the first laser unit includes a first semiconductor laser chip 111, a first collimating unit 112, and a first reflecting mirror 113, which are sequentially disposed, and the mth laser unit includes an mth semiconductor laser chip, an mth collimating unit, and an mth dichroic mirror or an mth reflecting mirror, which are sequentially disposed, where m is an integer greater than or equal to 2 and less than or equal to N, and the mth dichroic mirror is adapted to transmit at least the first initial laser light. The structure of the nth laser unit can improve the uniformity of the nth initial laser irradiating on the affected part, and meanwhile, the output power of at least one semiconductor laser chip is improved in a targeted mode, and certain flexibility is achieved. Fig. 7 and 8 exemplarily show the arrangement of the first to third laser units. In fig. 7, the first laser unit includes a first semiconductor laser chip 111, a first collimating unit 112, and a first reflecting mirror 113, which are sequentially arranged, the second laser unit includes a second semiconductor laser chip 121, a second collimating unit 122, and a second reflecting mirror 123, which are sequentially arranged, the third laser unit includes a third semiconductor laser chip 131, a third collimating unit 132, and a third dichroic mirror 134, which are sequentially arranged, the first initial laser light from the first semiconductor laser chip 111 passes through the third dichroic mirror 134 after passing through the first reflecting mirror 113, and the second initial laser light from the second semiconductor laser chip 121 passes through the third dichroic mirror 134 after passing through the second reflecting mirror 123. In fig. 8, the first laser unit includes a first semiconductor laser chip 111, a first collimating unit 112, and a first reflecting mirror 113 that are sequentially arranged, the second laser unit includes a second semiconductor laser chip 121, a second collimating unit 122, and a second dichroic mirror 124 that are sequentially arranged, the third laser unit includes a third semiconductor laser chip 131, a third collimating unit 132, and a third dichroic mirror 134 that are sequentially arranged, and the first initial laser light from the first laser unit sequentially passes through the second dichroic mirror 124 and the third dichroic mirror 134 after passing through the first reflecting mirror 113.
In this embodiment, the semiconductor laser system for medical use further includes: the laser module comprises a packaging shell (not shown in the figure), wherein a laser component 1, a light splitting unit 2 and a focusing unit 3 are fixed in the packaging shell, and the optical fiber 4, a detection unit 5 and a control unit 6 are positioned outside the packaging shell.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A semiconductor laser system for medical use, comprising:
the laser device comprises a first laser unit, an Nth laser unit, a Nth laser unit and a Nth laser unit, wherein N is an integer larger than 1, the Nth laser unit comprises an Nth semiconductor laser chip, N is an integer larger than or equal to 1 and smaller than or equal to N, the Nth semiconductor laser chip is suitable for emitting nth initial laser, and the wavelengths of the first initial laser and the Nth initial laser are different;
the focusing unit is suitable for focusing and coupling the nth initial laser to the optical fiber, and the optical fiber is suitable for transmitting the nth initial laser and the nth feedback laser corresponding to the nth initial laser;
the beam splitting unit is positioned between the nth laser unit and the focusing unit, is suitable for splitting the nth feedback laser and outputting nth detection laser, and does not overlap with the optical path of the nth initial laser transmitted from the nth laser unit to the beam splitting unit;
the detection unit is suitable for respectively receiving the first detection laser to the Nth detection laser and acquiring working wavelengths according to the first detection laser to the Nth detection laser;
and the control unit is electrically connected with the detection unit and is suitable for controlling the first semiconductor laser chip to the Nth semiconductor laser chip to emit laser with working wavelength.
2. The semiconductor laser system for medical use according to claim 1, wherein the detection unit includes:
a photodetector adapted to receive the nth detection laser light and detect an intensity of the nth detection laser light;
the analysis module is electrically connected with the photoelectric detector and is suitable for acquiring a first intensity ratio to an Nth intensity ratio and acquiring a working wavelength according to the minimum value of the first intensity ratio to the Nth intensity ratio, wherein the Nth intensity ratio is the ratio of the intensity of the nth detection laser to the intensity of the nth initial laser emitted by the nth semiconductor laser chip; the wavelength of the initial laser light emitted by the semiconductor laser chip corresponding to the minimum value of the first to nth intensity ratios is used as the working wavelength.
3. The medical semiconductor laser system according to claim 1, further comprising:
the power module, power module's input with the control unit electricity is connected, power module's output respectively with first semiconductor laser chip to Nth semiconductor laser chip electricity is connected, power module is the independent output power of multichannel, the control unit is suitable for control power module gets into the drive current of first semiconductor laser chip to Nth semiconductor laser chip in order to adjust.
4. The medical semiconductor laser system according to claim 3, wherein the power supply module is a modulated pulse power supply; the control unit is further adapted to control the pulse frequency and pulse width of the modulated pulsed power supply.
5. The medical semiconductor laser system according to claim 1, further comprising: the optical fiber, the detection unit and the control unit are positioned outside the packaging shell.
6. The semiconductor laser system for medical use according to claim 1, wherein the spectroscopic unit is a polarizing spectroscope; the length of the optical fiber is more than 1 meter.
7. The semiconductor laser system for medical treatment according to claim 6, wherein the optical fiber includes a first transmission region, a second transmission region and a third transmission region, one end of the second transmission region is connected to the first transmission region, the other end of the second transmission region is connected to the third transmission region, and the second transmission region is wound one or more times.
8. The medical semiconductor laser system according to claim 7, wherein a radius of each turn of the second transmission region is less than 200 times a diameter of the optical fiber.
9. The semiconductor laser system for medical use according to claim 1, wherein the spectroscopic unit is a non-polarizing spectroscope.
10. The semiconductor laser system for medical treatment according to claim 1, wherein the first laser unit to the nth laser unit are arranged in parallel and spaced from each other; the nth laser unit further comprises an nth collimation unit, and the nth collimation unit is suitable for collimating the nth initial laser;
the nth laser unit further comprises an nth dichroic mirror or an nth reflecting mirror, wherein the nth reflecting mirror is suitable for reflecting the collimated nth initial laser to the light splitting unit, or the nth dichroic mirror is suitable for reflecting the collimated nth initial laser to the light splitting unit.
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